JPH0265130A - Vacuum treatment device - Google Patents
Vacuum treatment deviceInfo
- Publication number
- JPH0265130A JPH0265130A JP21500888A JP21500888A JPH0265130A JP H0265130 A JPH0265130 A JP H0265130A JP 21500888 A JP21500888 A JP 21500888A JP 21500888 A JP21500888 A JP 21500888A JP H0265130 A JPH0265130 A JP H0265130A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum processing
- processing chamber
- vacuum
- sample
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009489 vacuum treatment Methods 0.000 title abstract 4
- 238000004891 communication Methods 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 abstract description 22
- 239000000428 dust Substances 0.000 abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 13
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 13
- 239000000872 buffer Substances 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 4
- 239000007795 chemical reaction product Substances 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UNPLRYRWJLTVAE-UHFFFAOYSA-N Cloperastine hydrochloride Chemical compound Cl.C1=CC(Cl)=CC=C1C(C=1C=CC=CC=1)OCCN1CCCCC1 UNPLRYRWJLTVAE-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、真空処理装置に係り、特に半導体素子基板（
以下、基板と略）等の試料を真空処理するのに好適な真
空処理装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum processing apparatus, and particularly to a vacuum processing apparatus for processing semiconductor element substrates (
The present invention relates to a vacuum processing apparatus suitable for vacuum processing samples such as substrates (hereinafter abbreviated as "substrates").
真空処理装置としては、例えば、特開昭６１−２４６３
８１号公報、特開昭６２−６１３１６号公報、特開昭６
２−８９８８１号公報等偕こ記載のものが知られている
。As a vacuum processing apparatus, for example, Japanese Patent Application Laid-Open No. 61-2463
No. 81, JP-A-62-61316, JP-A-6
2-89881 and other publications are known.
これら真空処理装置では、内部で試料が処理される真空
処理室は、ゲートバルブ等の外部との遮へい連通手段を
構成要素として有している。In these vacuum processing apparatuses, a vacuum processing chamber in which a sample is processed has a shielded communication means with the outside, such as a gate valve, as a component.
上記従来技術では、真空処理室の構成要素である外部と
の遮へい連通手段の開閉動作時に該手段から発生する塵
埃、該塵埃の真空処理室内での拡散防止について配慮さ
れていない。In the above-mentioned prior art, no consideration is given to dust generated from the shielding communication means with the outside, which is a component of the vacuum processing chamber, when the means is opened and closed, and to preventing the dust from diffusing within the vacuum processing chamber.
従って、真空処理室内で拡散した塵埃が試料の被処理面
に付着して試料の歩留りが低下するといりた問題が生じ
る。Therefore, a problem arises in that the dust diffused in the vacuum processing chamber adheres to the surface of the sample to be processed, resulting in a decrease in the yield of the sample.
本発明の目的は、真空処理される試料の塵埃付着による
歩留り低下を防止できる真空処理装置を提供することに
ある。An object of the present invention is to provide a vacuum processing apparatus that can prevent a decrease in yield due to dust adhesion on a sample to be vacuum processed.
上記目的は、真空処理装置を、外部との遮へい連通手段
を構成要素として有し内部で試料が処理される真空処理
室と、該真空処理室内を排気する手段と、前記真空処理
室内にガスを導入する手段と、前記真空処理室内にガス
が導入され排気される間に前記遮へい連通手段を作動さ
せる手段とを具備したものとすることにより、達成され
る。The above object is to provide a vacuum processing apparatus with a vacuum processing chamber having a shielding communication means with the outside as a component and in which a sample is processed, a means for evacuating the inside of the vacuum processing chamber, and a means for discharging gas into the vacuum processing chamber. This is achieved by comprising means for introducing gas into the vacuum processing chamber and means for operating the shielding communication means while gas is introduced into and exhausted from the vacuum processing chamber.
遮へい連通手段の開閉動作時に該手段についていた反応
生成物等の異物が該手段から外れ、これにより塵埃が発
生し真空処理室内に飛散する。そこで、遮へい連通手段
の開閉動作前に、真空処理室内にはガス導入手段よりガ
ス、例えば、窒素ガス等の不活性ガスが導入され、該導
入されたガスは、排気手段により真空処理室外へ排気さ
れる。During the opening and closing operations of the shielding communication means, foreign substances such as reaction products attached to the means are removed from the means, thereby generating dust and scattering it into the vacuum processing chamber. Therefore, before the opening/closing operation of the shield communication means, a gas, for example, an inert gas such as nitrogen gas, is introduced into the vacuum processing chamber from the gas introduction means, and the introduced gas is exhausted to the outside of the vacuum processing chamber by the exhaust means. be done.
このようなガスの導入、排気により真空処理室内ではガ
ケ流れが生じる。このように真空処理室内にガスが導入
され排気されている間に遮へい連通手段は、作動手段に
より開閉作動させられる。遮へい連通手段の開閉動作に
より発生する塵埃は、上記ガス流れに取り込まれガスと
共に真空処理室内へ拡散することなく真空処理室外へ排
出される。Due to such gas introduction and exhaust, a flow of debris occurs in the vacuum processing chamber. While gas is being introduced into and exhausted from the vacuum processing chamber in this manner, the shielding communication means is opened and closed by the operating means. Dust generated by the opening/closing operation of the shielding communication means is taken in by the gas flow and is discharged to the outside of the vacuum processing chamber without diffusing into the vacuum processing chamber together with the gas.
従って、真空処理室内で処理される試料の被処理面への
塵埃の付着が防止され、これによる試料の歩留り低下が
防止される。Therefore, dust is prevented from adhering to the processing surface of the sample being processed in the vacuum processing chamber, and a decrease in sample yield due to this is prevented.
以下、本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図は、本発明を適用した、いわゆる有磁場マイクロ
波プラズマエツチング装置の構成図である。FIG. 1 is a block diagram of a so-called magnetic field microwave plasma etching apparatus to which the present invention is applied.
第１図で、放電管１０の外側には、導波管加が略同心状
に配設されている。導波管（９）とマイクロ波発振手段
であるマグネトロンＩとは、導波管４で連結されている
。導波管（９）の外側には、磁場発生用コイル槌が環装
されている。バッフ１室関は、放電管１０開口端部の形
状２寸法と略一致する開口５１が形成された頂壁５２を
有する。放電管１０は、開口５１を介してパブファ室関
内と連通して頂壁５２に気密に構設されている。遮へい
連通手段は、この場合、ベローズωとリング状の弁体６
１とでなるタイプのゲートバルブ６２である。ベローズ
ω、弁体６１の径は、この場合、放電管１０．開口５１
の径よりも太き（なっている。ゲートバルブ６２は、放
電管１０と略同心状にバッファ室関内に設けられる。つ
まり、ベローズωの下端部はバッファ室間の底壁田に気
密に設けられ、ベローズωの上端部には、頂壁５２対応
して弁体６１が設けられる。作動手段である、例えば、
シリンダ７０は、底Ｗ５３と対応した位置でバッフ１室
閣外に設置される。シリンダ７０のロッドｎは、ベロー
ズωの軸心に沿って底Ｍ５３に気密を保持し、この場合
、上下動可能に挿設されている。ロブドア１のバッファ
室（資）内端部には、弁体６１が連結されている。弁体
６１が頂壁５２に当接して締切られた状態で、真空処理
室（資）が形成される。つまり、真空処理室（資）は、
放電管１０．開口５１゜ベローズω内に対応する頂壁５
２部、底部閏部、ゲートバルブ鑓により形成される。真
空処理室（資）内には、試料、例えば、基板匍を保持す
る試料台１００が設けられる。試料台１００の試料保持
面は、この場合、略水平状態であり、開口５１に対応さ
せられている。この場合、窒素ガス等の不活性ガスを、
試料台１００の試料保持面に設置された試料頒の被エツ
チング面の上方位置で真空処理室園内に導入可能に構成
されている。つまり、ガス源１１０が外部に設置され、
ガス導入管１１１の一端はガス源１１０に連結されてい
る。ガス導入管１１１の他端は、試料台１００の試料保
持面に設置された試料匍の被エツチング面の上方位置で
放電管１０内に開口させられている。ガス導入管１１１
には、バルブ１１２が設けられている。真空ポンプ１２
０が外部に設置され、排気管１２１の一端は真空ポンプ
１２０の吸気口に連結されている。排気管１２１の他端
は、真空処理室園内に連通して底壁間に連結されている
。排気管１２１には、バルブ１２２が設けられている。In FIG. 1, waveguides are arranged approximately concentrically on the outside of the discharge tube 10. As shown in FIG. The waveguide (9) and the magnetron I, which is a microwave oscillation means, are connected by a waveguide 4. A coil mallet for generating a magnetic field is mounted on the outside of the waveguide (9). The first buff chamber has a top wall 52 in which an opening 51 is formed which has dimensions that substantially match the shape and dimensions of the open end of the discharge tube 10 . The discharge tube 10 is airtightly disposed on the top wall 52 and communicates with the Puffer chamber via an opening 51. In this case, the shielding communication means includes a bellows ω and a ring-shaped valve body 6.
This is a gate valve 62 of the type consisting of 1 and 1. In this case, the bellows ω and the diameter of the valve body 61 are the discharge tube 10. Opening 51
The gate valve 62 is provided within the buffer chamber almost concentrically with the discharge tube 10. In other words, the lower end of the bellows ω is airtightly provided in the bottom wall between the buffer chambers. A valve body 61 is provided at the upper end of the bellows ω, corresponding to the top wall 52.
The cylinder 70 is installed outside the buffer 1 room at a position corresponding to the bottom W53. The rod n of the cylinder 70 maintains airtightness at the bottom M53 along the axis of the bellows ω, and in this case is inserted so as to be vertically movable. A valve body 61 is connected to the inner end of the buffer chamber (capital) of the rob door 1 . With the valve body 61 in contact with the top wall 52 and closed, a vacuum processing chamber is formed. In other words, the vacuum processing room (fund) is
Discharge tube 10. Top wall 5 corresponding to opening 51° bellows ω
It is formed by two parts, a bottom latch and a gate valve lug. A sample stage 100 for holding a sample, for example, a substrate holder, is provided in the vacuum processing chamber. In this case, the sample holding surface of the sample stage 100 is in a substantially horizontal state and corresponds to the opening 51. In this case, inert gas such as nitrogen gas,
It is configured so that it can be introduced into the vacuum processing chamber at a position above the surface to be etched of a sample distributing device installed on the sample holding surface of the sample stage 100. That is, the gas source 110 is installed externally,
One end of the gas introduction pipe 111 is connected to the gas source 110. The other end of the gas introduction tube 111 is opened into the discharge tube 10 at a position above the surface to be etched of a sample holder placed on the sample holding surface of the sample stage 100. Gas introduction pipe 111
A valve 112 is provided. vacuum pump 12
0 is installed outside, and one end of the exhaust pipe 121 is connected to the intake port of the vacuum pump 120. The other end of the exhaust pipe 121 communicates with the inside of the vacuum processing chamber and is connected between the bottom walls. The exhaust pipe 121 is provided with a valve 122 .
なお、図示省略したが、エツチングガスな放電管ｌＯ内
に導入する手段を、この場合、別に有している。また、
バッファ室関内も減圧排気可能になっている。Although not shown, in this case, means for introducing etching gas into the discharge tube 1O is provided separately. Also,
The buffer room Kannai can also be evacuated under reduced pressure.
第１図に示す状態から、ゲートバルブ０を閉動作させる
前に、バルブ１１２．１２１が開弁され、真空ポンプ１
２０が作動させられる。これにより、ガス源１１０から
窒素ガスが所定流量でガス導入管１１１を通って放電管
１０内に導入される。放電管１０内に導入された窒素ガ
スは、開口５１を通り真空処理室（資）の一部となるバ
ブファ室関内を流れて真空ポンプ１２０により排気され
る。これにより少なくとも真空処理室閣内は粘性流若し
くは中間流領域に置かれる。この状態で、シリンダ７０
が作動させられロブドア１は上昇させられる。これによ
り弁体６１は、頂壁５２に向って上昇させられ、最終的
には、弁体６１が頂壁５２に当接して締切られ遮へいさ
れる。ロブドア１の上昇、これによる弁体６１の上昇に
よりベローズ印は伸びる方向に変形させられる。該変形
時にベローズ（イ）についていた反応生成物等の異物が
ベローズ印から外れる。核外れだ異物や弁体６１から外
れた異物は塵埃となり、窒素ガスのガス流れに取り込ま
れて窒素ガスと共に真空処理室（資）外へ排出される。From the state shown in FIG. 1, before closing gate valve 0, valves 112 and 121 are opened, and vacuum pump 1 is opened.
20 is activated. As a result, nitrogen gas is introduced from the gas source 110 into the discharge tube 10 through the gas introduction tube 111 at a predetermined flow rate. The nitrogen gas introduced into the discharge tube 10 passes through the opening 51 and flows inside the bubble chamber, which is part of the vacuum processing chamber, and is exhausted by the vacuum pump 120. As a result, at least the interior of the vacuum processing chamber is placed in a viscous flow or intermediate flow region. In this state, the cylinder 70
is activated and the rob door 1 is raised. As a result, the valve body 61 is raised toward the top wall 52, and finally the valve body 61 comes into contact with the top wall 52 and is closed and shielded. The bellows mark is deformed in the elongated direction by the rise of the lob door 1 and the resulting rise of the valve body 61. Foreign substances such as reaction products attached to the bellows (A) during the deformation are removed from the bellows mark. The foreign matter that has come off the core and the valve body 61 becomes dust, which is taken into the flow of nitrogen gas and discharged out of the vacuum processing chamber (capital) together with the nitrogen gas.
ゲートバルブ６２の閉動作が完了した時点で、バルブ１
１２は閉弁され、窒素ガスの導入が停止される。その後
、試料□□□の被エツチング面は、例えば、特公昭
−号公報
等に記載のようにしてエツチング処理される。試料（社
）のエツチング処理終了後、ゲートバルブ６２は開かれ
るが、この場合、上記したように真空処理室（資）内を
粘性流若しくは中間流領域にαいた後に開動作させられ
る。ゲートバルブ６２の開動作によりゲートバルブ６２
から外れた異物は、窒素ガスの流れに取り込まれて窒素
ガスと共に真空処理室間外へ排出される。その後、この
ような操作が繰り返し実施されることで、試料（３）は
、１個毎にエツチング処理される。When the closing operation of the gate valve 62 is completed, the valve 1
The valve 12 is closed and the introduction of nitrogen gas is stopped. After that, the etched surface of the sample □□□ is
Etching treatment is carried out as described in Publication No. After the etching process of the sample is completed, the gate valve 62 is opened, but in this case, as described above, the gate valve 62 is opened after the inside of the vacuum processing chamber is in the viscous flow or intermediate flow region. The opening operation of the gate valve 62 causes the gate valve 62 to open.
The foreign matter that has come off is taken into the flow of nitrogen gas and discharged together with the nitrogen gas to the outside of the vacuum processing chamber. Thereafter, by repeating such operations, each sample (3) is etched one by one.
本実施例によれば、ゲートバルブの開閉作動により発生
する塵埃を、真空処理室内への拡散を防止して真空処理
室外へ排出できるので、試料の被エツチング面への塵埃
の付着を防止できる。従って、試料が基板である場合、
塵埃付着による素子回路不良を防く゛ことができ歩留り
低下を防止することができる。According to this embodiment, the dust generated by the opening/closing operation of the gate valve can be prevented from diffusing into the vacuum processing chamber and can be discharged to the outside of the vacuum processing chamber, thereby preventing the dust from adhering to the surface of the sample to be etched. Therefore, if the sample is a substrate,
It is possible to prevent element circuit defects due to dust adhesion, and to prevent a decrease in yield.
なお、上記実施例では、遮へい連通手段としてベローズ
と弁体とでなるタイプのゲートバルブを用いているが、
その他のタイプのゲートバルブを用いても良い。また、
ゲートバルブとは異なる、例えば、シャッタ、回転弁等
のものを用いても良い。いずれにしても、遮へい連通手
段とは、真空処理室の構成要素であり、開閉作動時に可
動部分を有する構造のものである。In addition, in the above embodiment, a type of gate valve consisting of a bellows and a valve body is used as the shielding communication means.
Other types of gate valves may also be used. Also,
Other than the gate valve, for example, a shutter, a rotary valve, etc. may be used. In any case, the shielding communication means is a component of the vacuum processing chamber, and has a structure that has movable parts during opening and closing operations.
更に、上記実施例では、真空処理室の内部で試料がエツ
チング処理されるが、その他の処理、成膜処理、クリー
ニング処理、アッシング処理等が実施されても良い。Further, in the above embodiments, the sample is etched inside the vacuum processing chamber, but other treatments such as film formation, cleaning, ashing, etc. may also be performed.
本発明によれば、遮へい連通手段の開閉作動により発生
する塵埃の試料への付着を防止できるので、該塵埃付着
に起因する試料の歩留り低下を防止できる効果がある。According to the present invention, since it is possible to prevent dust generated by the opening/closing operation of the shielding communication means from adhering to the sample, it is possible to prevent a decrease in the yield of the sample due to the adhesion of the dust.
第１図は、本発明の一実施例の有磁場マイクロ波プラズ
マエツチング装置の構成図である。
６２・・・・・・ゲートバルブ、７０・・・・・・シリ
ンダ、ｎ・・・・・・ロブド、関・・・・・・真空処理
室、美・・・・・・試料、１００・・・試料台、１１０
・・・・・・ガス源、１１１・・・・・・ガス導入管、
１１２、１２２・・・・・・バルブ、１２０・・・・・
・真空ポンプ、 １２１・・・・・・排気管
代理人 弁理士 小 川 勝 男
イ／ 図FIG. 1 is a block diagram of a magnetic field microwave plasma etching apparatus according to an embodiment of the present invention. 62... Gate valve, 70... Cylinder, n... Lobdo, Seki... Vacuum processing chamber, Beauty... Sample, 100...・・Sample stand, 110
...Gas source, 111...Gas introduction pipe,
112, 122... Valve, 120...
・Vacuum pump, 121... Exhaust pipe agent Patent attorney Masaru Ogawa / Diagram
Claims (1)
で試料が処理される真空処理室と、該真空処理室内を排
気する手段と、前記真空処理室内にガスを導入する手段
と、前記真空処理室内にガスが導入され排気される間に
前記遮へい連通手段を作動させる手段とを具備したこと
を特徴とする真空処理装置。1. A vacuum processing chamber which has a shielded communication means with the outside as a component and in which a sample is processed, a means for evacuating the vacuum processing chamber, a means for introducing gas into the vacuum processing chamber, and the vacuum processing chamber. A vacuum processing apparatus comprising means for operating the shielding communication means while gas is introduced into and exhausted from the processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63215008A JP2664216B2 (en) | 1988-08-31 | 1988-08-31 | Control method of vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63215008A JP2664216B2 (en) | 1988-08-31 | 1988-08-31 | Control method of vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0265130A true JPH0265130A (en) | 1990-03-05 |
| JP2664216B2 JP2664216B2 (en) | 1997-10-15 |
Family
ID=16665185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63215008A Expired - Lifetime JP2664216B2 (en) | 1988-08-31 | 1988-08-31 | Control method of vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664216B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002329763A (en) * | 2001-04-27 | 2002-11-15 | Yaskawa Electric Corp | Connecting structure between hermetic chambers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6370530A (en) * | 1986-09-12 | 1988-03-30 | Hitachi Ltd | Processing equipment |
| JPS63128711A (en) * | 1986-11-19 | 1988-06-01 | Tokyo Electron Ltd | Heat treatment apparatus |
-
1988
- 1988-08-31 JP JP63215008A patent/JP2664216B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6370530A (en) * | 1986-09-12 | 1988-03-30 | Hitachi Ltd | Processing equipment |
| JPS63128711A (en) * | 1986-11-19 | 1988-06-01 | Tokyo Electron Ltd | Heat treatment apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002329763A (en) * | 2001-04-27 | 2002-11-15 | Yaskawa Electric Corp | Connecting structure between hermetic chambers |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2664216B2 (en) | 1997-10-15 |
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