JPH0261095A - Method for plating chip parts - Google Patents
Method for plating chip partsInfo
- Publication number
- JPH0261095A JPH0261095A JP21022788A JP21022788A JPH0261095A JP H0261095 A JPH0261095 A JP H0261095A JP 21022788 A JP21022788 A JP 21022788A JP 21022788 A JP21022788 A JP 21022788A JP H0261095 A JPH0261095 A JP H0261095A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- dummies
- barrel
- chip parts
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 abstract description 22
- 239000010959 steel Substances 0.000 abstract description 22
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000003756 stirring Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子機器に使用されるチップ部品のメッキ方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of plating chip components used in electronic equipment.
従来の技術
従来、この種のメッキ方法において、バレルメッキする
際、第6図に示すようにして行われていた。第6図は例
としてチップ部品をバレルメッキする際のバレル内へ投
入された各投入物のバレル回転時の攪拌混合状態の概略
図を示しており、1はバレル、2は陰極側メッキ電極棒
であり、バレル1内にはチップ部品(被メッキ品)3と
スチールボールダミー(導体ダミー)4が投入されてお
り、バレル1を回転させることによって、スチールボー
ルダミー4によってチップ部品3間の導通をとり、メッ
キを施していた。BACKGROUND OF THE INVENTION Conventionally, in this type of plating method, barrel plating has been carried out as shown in FIG. Fig. 6 shows a schematic diagram of the stirring and mixing state of each input into the barrel during barrel plating of chip parts as an example, when the barrel rotates, where 1 is the barrel and 2 is the cathode side plating electrode rod. A chip component (product to be plated) 3 and a steel ball dummy (conductor dummy) 4 are inserted into the barrel 1, and by rotating the barrel 1, conduction between the chip components 3 is established by the steel ball dummy 4. It was then plated.
このような従来の方法では、バレル回転中において、チ
ップ部品とスチールボールダミーが均一に混合されず分
離現象を起し、メッキする上で最も重要である均一電流
密度が保たれず、それによって、チップ部品個々への均
一なメッキ膜厚が得られず、バラツキが大きくなるとい
う欠点があった。更に、バレルメッキ方法の最大の長所
である大量のチップ部品を同時にメッキ生産できるとい
う長所がこの分離現象によって妨げられるという欠点も
あった。In such conventional methods, the chip component and the steel ball dummy are not mixed uniformly during the barrel rotation, causing a separation phenomenon, and the uniform current density, which is the most important for plating, cannot be maintained. This method has the disadvantage that a uniform plating film thickness cannot be obtained for each individual chip component, resulting in large variations. Furthermore, the separation phenomenon hinders the greatest advantage of the barrel plating method, which is that a large number of chip parts can be plated at the same time.
発明が解決しようとする課題
このような従来の方法でチップ部品とスチールボールダ
ミーを均一に混合させるためには、スチールボールダミ
ーをより大量に投入しなければならない。しかし、大量
にスチールボールダミーを投入すると、電流の流れがス
チールボールダミー側にかたより、電流効率が極端に低
下し、その結果、チップ部品へのメッキ成長速度が低下
するため、生産効率が悪化する。すなわち、長時間メッ
キを施さないと、目的とするメッキ膜厚が得られないと
いう問題点を有している。また、バレル内に攪拌機能を
もった装置を新たに取り付け、チップ部品とスチールボ
ールダミーの分離現象を解消させようとした場合、チッ
プ部品とその攪拌装置との接触によって、チップ部品が
損傷するという新たな問題点が発生してくる。更に、攪
拌状態を均一させるためには、スチールボールダミーの
大きさを大小混合させて攪拌する方法があるが、この方
法では、スチールボールダミー側に電流が流れやすくな
り、その結果チップ部品へのメッキ成長速度が遅くなり
、生産性及び電流効率が悪化するという問題点を有して
いる。Problems to be Solved by the Invention In order to uniformly mix chip components and steel ball dummies using such a conventional method, a larger amount of steel ball dummies must be introduced. However, if a large number of steel ball dummies are introduced, the current flow will be biased toward the steel ball dummies, resulting in an extremely low current efficiency.As a result, the growth rate of plating on chip components will slow down, which will worsen production efficiency. do. That is, there is a problem in that unless plating is performed for a long time, the desired plating film thickness cannot be obtained. In addition, if a new device with a stirring function is installed inside the barrel and an attempt is made to eliminate the separation phenomenon between the chip components and the steel ball dummy, the chip components will be damaged due to contact with the stirring device. New problems arise. Furthermore, in order to make the stirring state uniform, there is a method of mixing steel ball dummies of different sizes, but with this method, the current flows more easily to the steel ball dummy side, and as a result, the current flows to the chip parts. This has the problem that the plating growth rate becomes slow and the productivity and current efficiency deteriorate.
本発明は上述したようなバレル内のチップ部品とスチー
ルボールダミーの混合状態の不拘−及び、電流効果の低
下を解決することによって、チップ部品型々のメッキ膜
厚のバラツキを小さくし、且つ大量にメッキできる方法
を提供することを目的とする。The present invention solves the problem of the above-mentioned inconsistency in the mixing state of the chip parts and steel ball dummy in the barrel and the reduction of the current effect, thereby reducing the variation in the plating film thickness of each type of chip parts, and The purpose is to provide a method for plating.
課題を解決するための手段
以上のような問題点を解決するために本発明は、バレル
内への投入物をチップ部品、及びスチールボールダミー
に加え、新たにセラミックダミーを追加しメッキ時の攪
拌効率を向上させたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention adds chip parts and steel ball dummies to the barrel, adds a new ceramic dummy, and improves the agitation during plating. This improves efficiency.
作用
この構成によれば、メッキダミーとして、スチールボー
ルダミーに加え球状セラミックダミーを追加投入し回転
させながらバレルメッキすることにより、セラミックダ
ミーが自由自在に動くことによってチップ部品とスチー
ルボールダミーが均一に混合され、電流の流れがスチー
ルボールダミー側にかたよらなくなり、均一な電流分布
が得られ、電流効率が良くなる。その結果、チップ部品
のバレルメッキ生産において同時に大量のメッキ生産が
でき、よシメソキ膜厚バラツキの小さい、安定したメッ
キ品質が得られ、信頼性の高い製品を作り出すことがで
きろう
実施例
以下、本発明の角形チップ固定抵抗器のバレルメッキ方
法の一実施例について図面を参照しながら説明する。第
2図は本発明釦・トける大小異なる球状のセラミックダ
ミーであり、11は直径12mのセラミックダミーであ
り、12は直径8mmのセラミックダミーである。第1
図は、第2図のセラミックダミー11.12と角形チッ
プ固定抵抗器及びスチールボールダミーをバレルに投入
し、角形チップ固定抵抗器のメッキ時におけるバレル回
転時のバレル中での攪拌混合状態を示す概略図である。Effect: According to this configuration, a spherical ceramic dummy is added in addition to the steel ball dummy as a plating dummy, and barrel plating is performed while rotating, so that the ceramic dummy moves freely and the chip parts and the steel ball dummy are evenly coated. The current flow is not biased toward the steel ball dummy, resulting in a uniform current distribution and improved current efficiency. As a result, a large amount of plating can be produced at the same time in the barrel plating production of chip parts, and stable plating quality with small variations in film thickness can be obtained, making it possible to produce highly reliable products. An embodiment of the barrel plating method for a rectangular chip fixed resistor according to the invention will be described with reference to the drawings. FIG. 2 shows spherical ceramic dummies of different sizes that can be pressed and pressed according to the present invention, 11 is a ceramic dummy with a diameter of 12 m, and 12 is a ceramic dummy with a diameter of 8 mm. 1st
The figure shows the state of stirring and mixing in the barrel as the barrel rotates during plating of the square chip fixed resistor when ceramic dummies 11 and 12 of Figure 2, the square chip fixed resistor, and the steel ball dummy are put into the barrel. It is a schematic diagram.
13はバレルであり、14は陰極側メッキ電極棒であり
、15は角形チップ固定抵抗器であり、16はスチール
ボールダミーである一更に第3図は本発明によって作ら
れた角形チップ固定抵抗器の断面図である。17はアル
ミナなどの絶縁基板であり、18はオーバーコートガラ
スであり、19は銀系の電極層であり、2Qはニッケル
メッキ層であり、21ははんだメッキ層である。13 is a barrel, 14 is a cathode side plated electrode rod, 15 is a square chip fixed resistor, and 16 is a steel ball dummy.Furthermore, Fig. 3 shows a square chip fixed resistor made according to the present invention. FIG. 17 is an insulating substrate such as alumina, 18 is overcoat glass, 19 is a silver-based electrode layer, 2Q is a nickel plating layer, and 21 is a solder plating layer.
本発明は、第2図に示した様な大小異なる球状のセラミ
ックダミーをバレル内に投入することによって、前記従
来の欠点、すなわちチップ部品とスチールボールダミー
との分離状態をなくすことによって、電流効果の低下に
よるメッキ膜厚バラツキの増大、更に大量のチップ部品
を同時に、メッキできないという問題を解消することが
できる。The present invention eliminates the conventional drawback, that is, the state of separation between the chip component and the steel ball dummy, by inserting spherical ceramic dummies of different sizes into the barrel as shown in FIG. It is possible to solve the problem of increased variation in plating film thickness due to a decrease in plating thickness and the inability to plate a large number of chip components at the same time.
以下、本発明のセラミックダミーを利用した角形チップ
固定抵抗器の電嗅メッキについて具体的実施例を述べる
。角形チップ固定抵抗器10ノド30万個に、スチール
ボールダミー4.5に9と、本発明のセラミックダミー
1に9(セラミックダミー大小比率1:1)をバレル内
に投入し回転させながらニッケル及び、はんだメッキを
行い、これを50フト実施し、ロット内・ロフト間での
メッキ膜厚を確認し従来方法と比較した。Hereinafter, specific examples will be described regarding electroplating of a rectangular chip fixed resistor using the ceramic dummy of the present invention. 300,000 square chip fixed resistors with 10 slots, steel ball dummies 4.5 to 9, and ceramic dummies 1 to 9 of the present invention (ceramic dummy size ratio 1:1) are placed in a barrel, and while rotating, nickel and , solder plating was carried out for 50 feet, and the plating film thickness within a lot and between lofts was confirmed and compared with the conventional method.
但し、角形チップ抵抗器の投入数量以外のメッキ条件は
同じである。However, the plating conditions other than the number of square chip resistors used are the same.
尚、各メッキ膜厚の測定は、各ロフト毎n=100個ラ
ンダムサンプリングし、ニッケルメッキ層20.はんだ
メッキ層21の各メッキ膜厚を測定する。The thickness of each plating film was measured by randomly sampling n = 100 pieces for each loft, and measuring the thickness of the nickel plating layer 20. The thickness of each plating film of the solder plating layer 21 is measured.
その結果を第4図、第5図に示す。The results are shown in FIGS. 4 and 5.
ニッケルメッキ膜厚のバラツキ(δn、)については、
本発明品では従来品と比較して、約1.7μmが約0.
7μmと大幅に減少した。また、はんだメッキ膜厚のバ
ラツキ(δn−1)については、従来品と比較して、約
1.8μmが約0.8μmとこれも大幅に減少し、バラ
ツキの小さい安定したメッキ膜厚が得られる。Regarding the variation in nickel plating film thickness (δn,),
The product of the present invention has a diameter of about 1.7 μm compared to a conventional product of about 0.
It decreased significantly to 7 μm. In addition, the variation in solder plating film thickness (δn-1) has been significantly reduced from about 1.8 μm to about 0.8 μm compared to the conventional product, resulting in a stable plating film thickness with small variations. It will be done.
史に、従来は10ットサイズ6〜15万個であったもの
が本発明において30万個にまで拡大でき、生産性の高
いメッキ方法が確立できる。Historically, the number of 10-t sizes was 60,000 to 150,000 pieces in the past, but with the present invention, the number can be expanded to 300,000 pieces, and a highly productive plating method can be established.
発明の効果
以上のように本発明によってバレルメッキに、セラミッ
クダミーを使用することにより、メッキ膜厚バラツキが
小さく、しかも大量のメッキを施すことができ、それに
よって、角形チップ固定抵抗器の安定した信頼性の高い
均質な製品品質の確保と、生産能力アップを図ることが
できるという効果が得られる。Effects of the Invention As described above, by using a ceramic dummy for barrel plating according to the present invention, variations in the plating film thickness are small and a large amount of plating can be applied, thereby making it possible to stabilize the square chip fixed resistor. This has the effect of ensuring highly reliable and homogeneous product quality and increasing production capacity.
第1図は本発明のメッキ方法を説明するための概略図、
第2図は第1図のメッキ方法に用いたセラミックダミー
を示す平面図、第3図は角形チップ固定抵抗器の断面図
、第4図、第6図は本発明の詳細な説明するだめの特性
図、第6図は従来のチップ部品をバレルメッキする際の
バレル内へ投入された各投入物の攪拌混合状態の概略図
である。
11.12・・・・・・セラミックダミー、13・・・
・・・バレル、14・・・・・・陰極側メッキ電極棒、
15・・・・・角形チップ固定抵抗器、16・・・・・
・スチールボールダミー
代理人の氏名 弁理士 粟 野 重 孝 ほか1名tt
、 /2−m−
I乙 −−−
セラミックダミー
バレル
慶ル側メッキ叢極捧
角形チ、・ノブ固定社#、器
スチーノしボールダミー
第2図
図
第
図
第
図FIG. 1 is a schematic diagram for explaining the plating method of the present invention,
Fig. 2 is a plan view showing the ceramic dummy used in the plating method shown in Fig. 1, Fig. 3 is a cross-sectional view of a rectangular chip fixed resistor, and Figs. The characteristic diagram, FIG. 6, is a schematic diagram of the state of stirring and mixing of various materials introduced into the barrel during conventional barrel plating of chip components. 11.12...Ceramic dummy, 13...
... Barrel, 14 ... Cathode side plated electrode rod,
15... Square chip fixed resistor, 16...
・Name of steel ball dummy agent: Patent attorney Shigetaka Awano and 1 other persontt
, /2-m- I O --- Ceramic dummy barrel side plated square pole, knob fixing company #, vessel stino ball dummy Fig. 2 Fig. Fig. Fig.
Claims (1)
ラミックダミーを投入し、メッキを施すことを特徴とす
るチップ部品のメッキ方法。A method for plating chip parts, characterized in that a conductor dummy and a ceramic dummy are put together with a chip part to be plated, and plating is applied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21022788A JPH0261095A (en) | 1988-08-24 | 1988-08-24 | Method for plating chip parts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21022788A JPH0261095A (en) | 1988-08-24 | 1988-08-24 | Method for plating chip parts |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0261095A true JPH0261095A (en) | 1990-03-01 |
Family
ID=16585892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21022788A Pending JPH0261095A (en) | 1988-08-24 | 1988-08-24 | Method for plating chip parts |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0261095A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570999A (en) * | 1991-09-13 | 1993-03-23 | Murata Mfg Co Ltd | Method for plating small-size part |
US5589287A (en) * | 1993-10-18 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Molten carbonate fuel cell |
KR20020068915A (en) * | 2001-02-23 | 2002-08-28 | 주식회사 한국전자재료 | An electroplating apparatus and electroplating method |
-
1988
- 1988-08-24 JP JP21022788A patent/JPH0261095A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0570999A (en) * | 1991-09-13 | 1993-03-23 | Murata Mfg Co Ltd | Method for plating small-size part |
US5589287A (en) * | 1993-10-18 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Molten carbonate fuel cell |
KR20020068915A (en) * | 2001-02-23 | 2002-08-28 | 주식회사 한국전자재료 | An electroplating apparatus and electroplating method |
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