JPH0260227U - - Google Patents
Info
- Publication number
- JPH0260227U JPH0260227U JP13870088U JP13870088U JPH0260227U JP H0260227 U JPH0260227 U JP H0260227U JP 13870088 U JP13870088 U JP 13870088U JP 13870088 U JP13870088 U JP 13870088U JP H0260227 U JPH0260227 U JP H0260227U
- Authority
- JP
- Japan
- Prior art keywords
- reflected light
- shutter
- light intensity
- exposure apparatus
- projection exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 2
Description
第１図は本考案による縮小投影露光装置の一実
施例を示す概念図、第２図は本考案の他の実施例
における縮小レンズとホトレジストとの配置関係
を示す図、第３図は従来の縮小投影露光装置の一
例を示す概念図、第４図はホトレジストの膜厚に
よる反射率の変化態様を示す図である。
１……光源、２……シヤツター、３……レチク
ル、４……縮小レンズ、５……ウエハー、６……
ステージチヤツク、９……ホトダイオード（反射
光強度測定手段）、１０……反射光、１１……シ
ヤツター開閉時間制御手段。
Fig. 1 is a conceptual diagram showing an embodiment of a reduction projection exposure apparatus according to the present invention, Fig. 2 is a diagram showing the arrangement relationship between a reduction lens and a photoresist in another embodiment of the invention, and Fig. 3 is a diagram showing a conventional arrangement. FIG. 4 is a conceptual diagram showing an example of a reduction projection exposure apparatus, and is a diagram showing how the reflectance changes depending on the film thickness of the photoresist. 1...Light source, 2...Shutter, 3...Reticle, 4...Reducing lens, 5...Wafer, 6...
Stage chuck, 9... Photodiode (reflected light intensity measuring means), 10... Reflected light, 11... Shutter opening/closing time control means.
Claims (1)
ドリピート方式でウエハーを露光するように成さ
れた縮小投影露光装置において、 上記ウエハーからの反射光の強度を測定する反
射光強度測定手段と、該反射光強度測定手段に得
られる反射光強度測定信号に基づいて上記シヤツ
ターの開閉時間を制御するシヤツター開閉時間制
御手段とを設けたことを特徴とする縮小投影露光
装置。[Claims for Utility Model Registration] Reflected light intensity for measuring the intensity of reflected light from the wafer in a reduction projection exposure apparatus that has a shutter in front of a light source and exposes a wafer using a step-and-repeat method. A reduction projection exposure apparatus comprising: a measuring means; and a shutter opening/closing time control means for controlling the opening/closing time of the shutter based on a reflected light intensity measurement signal obtained by the reflected light intensity measuring means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13870088U JPH0260227U (en) | 1988-10-25 | 1988-10-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13870088U JPH0260227U (en) | 1988-10-25 | 1988-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0260227U true JPH0260227U (en) | 1990-05-02 |
Family
ID=31401283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13870088U Pending JPH0260227U (en) | 1988-10-25 | 1988-10-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0260227U (en) |
-
1988
- 1988-10-25 JP JP13870088U patent/JPH0260227U/ja active Pending
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