JPH0258243A - Manufacture of semiconductor device with heat sink - Google Patents
Manufacture of semiconductor device with heat sinkInfo
- Publication number
- JPH0258243A JPH0258243A JP20859188A JP20859188A JPH0258243A JP H0258243 A JPH0258243 A JP H0258243A JP 20859188 A JP20859188 A JP 20859188A JP 20859188 A JP20859188 A JP 20859188A JP H0258243 A JPH0258243 A JP H0258243A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- resin
- molding
- substrate
- held
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000011347 resin Substances 0.000 claims abstract description 37
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 238000000465 moulding Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000001746 injection moulding Methods 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000011800 void material Substances 0.000 abstract 2
- 229920000954 Polyglycolide Polymers 0.000 description 14
- 235000010409 propane-1,2-diol alginate Nutrition 0.000 description 14
- 230000017525 heat dissipation Effects 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、放熱板をインサートモールドした樹脂封止型
半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a resin-sealed semiconductor device in which a heat sink is insert-molded.
樹脂封止型半導体装置の一例としてピングリッドアレイ
(以下PGAと略記する)について説明する。A pin grid array (hereinafter abbreviated as PGA) will be described as an example of a resin-sealed semiconductor device.
ICチップを搭載したPGAは近年それを交換して他の
機能に変換出来ることにより装置の応用範囲を広げるこ
とが行なわれてきており、この用途のためのPGAの回
路基板としてセラミックが用いられてきた。In recent years, PGAs equipped with IC chips have been able to be replaced and converted to other functions, expanding the scope of application of the device, and ceramics have been used as circuit boards for PGAs for this purpose. Ta.
このセラミック製の基板は、絶縁性に優れ、従って製品
としての信頼性が大きい反面、配線パターンを印刷、焼
付により行なうため収縮を伴ない、配線パターンを多く
したり細密パターン化することが困難であった。またパ
ターンの本数を多くすると可及的に大型化するとともに
、その単体での価格が高いという欠点があった。This ceramic substrate has excellent insulating properties and is therefore highly reliable as a product. However, since the wiring pattern is printed and baked, it shrinks, making it difficult to increase the number of wiring patterns or create finer patterns. there were. In addition, increasing the number of patterns increases the size as much as possible, and also has the disadvantage that the price of each pattern is high.
このセラミック製の基板に代わるものとして近年、細密
パターン加工が可能で、かつ廉価な基板として樹脂基板
を用いたPGAの開発が提案されており、本出願人は特
開昭62−244139号公報にて下面側に複数のコン
タクトビンな有する樹脂基板のICチップを載置した上
面と樹脂基板周囲の破断面とを成形樹脂によって完全に
被覆したパンケージング構造を提案した。In recent years, as an alternative to this ceramic substrate, it has been proposed to develop a PGA using a resin substrate as a substrate that can be processed into fine patterns and is inexpensive. We proposed a pancaging structure in which the upper surface of a resin substrate on which an IC chip is mounted and the fractured surface around the resin substrate, which has a plurality of contact bins on the lower surface side, are completely covered with molded resin.
しかし上記樹脂封止型のPGAは、セラミック基板を用
いたPGAに対し、細密パターン加工による小型化と廉
価とが可能であるにもかかわらず、未だに普及し得ない
理由として放熱特性の問題がある。However, despite the fact that the resin-sealed PGA can be made smaller and cheaper through fine pattern processing than the PGA using a ceramic substrate, it still has not become popular due to problems with its heat dissipation properties. .
すなわち、PGAに実装されるICはチップサイズの大
きいLSIであるため動作電流による発熱が多く、この
発熱を素早くパッケージ外へ放熱してやらないと前記L
SIの温度が上昇することにより、その読出し速度が低
下したり、極端な場合はLSIが熱破壊されてしまう問
題が発生する。In other words, since the IC mounted on the PGA is an LSI with a large chip size, it generates a lot of heat due to the operating current.
An increase in the temperature of the SI causes problems such as a decrease in the read speed and, in extreme cases, thermal destruction of the LSI.
上記問題を解決するものとして本出願人はすでに成形樹
脂の上面部に金属製の放熱部材をインサートモールドし
た樹脂封止型PGAの構造を特願昭63−25516号
及び特願昭63−72190号等により提案している。In order to solve the above problem, the present applicant has already proposed a resin-sealed PGA structure in which a metal heat dissipating member is insert-molded on the upper surface of the molded resin in Japanese Patent Application No. 63-25516 and Japanese Patent Application No. 63-72190. It is proposed by et al.
第4図は放熱板8をインサートモールドした先願のPG
Aの成形状態を示す成形金型の要部断面図であり、上金
型90には位置決め凹部90aと真空穴90bとによっ
て構成される放熱板保持部が設けられており、前記放熱
板8が真空穴90bの吸着力によって位置決め保持され
ている。Figure 4 shows the PG of the previous application in which the heat dissipation plate 8 was insert molded.
It is a sectional view of the main part of the molding die showing the molding state of A, and the upper mold 90 is provided with a heat dissipation plate holding part constituted by a positioning recess 90a and a vacuum hole 90b, and the heat dissipation plate 8 is It is positioned and held by the suction force of the vacuum hole 90b.
又、下金型91には凹部91aとコンタクトビンの退入
91bとによって構成される基板保持部が設けられてお
り、凹部91aには下面側に複数のコンタクトビン20
を備え、又上面側にICチップ1を実装した樹脂基板2
が位置決め保持されている。Further, the lower mold 91 is provided with a substrate holding portion constituted by a recess 91a and a contact bin recess 91b, and the recess 91a has a plurality of contact bins 20 on the lower surface side.
and a resin substrate 2 on which an IC chip 1 is mounted on the upper surface side.
is held in position.
又、前記上金型90と下金型91とが密着するバーテン
グライン(PL)の位置には、前記下金型に形成された
凸部91dにより成形樹脂6を注入するための湯口91
cが設けられている。Further, at the position of the bartending line (PL) where the upper mold 90 and the lower mold 91 are in close contact, there is a sprue 91 for injecting the molding resin 6 through a convex portion 91d formed in the lower mold.
c is provided.
従来この湯口91cをバーテングライン(P L)の位
置に設ける理由としては、成形金型の構造を出来るだけ
単純化して製作費を安くするとともに、耐久性を良くす
るためである。Conventionally, the reason for providing this sprue 91c at the position of the bartending line (PL) is to simplify the structure of the molding die as much as possible to reduce manufacturing costs and to improve durability.
すなわち、成形金型の一般的な構成としては、第4図の
ごとく下金型に彫り込み加工忙よって回路基板等を収納
するための複雑な凹部を形成し、上金型にはあまり複雑
な彫り込み加工は施さない構造となっており前記湯口9
1cは下金型91に彫り込み加工によって設けられた凸
部91dと上金型90の下面とによって構成されるサイ
ドゲート構成とするのが最も単純化された構造といえる
。In other words, as shown in Figure 4, the general structure of a molding die is that the lower mold is carved to form a complicated recess for storing a circuit board, etc., and the upper mold is not carved with less complicated engravings. It has a structure that does not undergo any processing, and the sprue 9
1c can be said to have the simplest structure, having a side gate configuration consisting of a convex portion 91d provided by engraving on the lower mold 91 and the lower surface of the upper mold 90.
しかるに第4図に示す成形金型に於いて湯口91cより
成形樹脂6を注入した場合を考えると、前記特開昭62
−244139号公報のごとく放熱板8が存在しない場
合は成形樹脂6が樹脂基板2の上面側より注入すること
によって良好なインサートモールドが行われる。However, if we consider the case where the molding resin 6 is injected from the sprue 91c in the mold shown in FIG.
When the heat dissipation plate 8 is not present as in Japanese Patent No. 244139, good insert molding is performed by injecting the molding resin 6 from the upper surface side of the resin substrate 2.
しかし第4図に示すごとく放熱板8が存在する場合は、
注入される成形樹脂6の流入圧力が矢印Aで示すごとく
放熱板8の側面に加わることにより、前記放熱板8が位
置ずれを生じ、変位した状態でモールドされるという問
題が発生する。However, if the heat sink 8 is present as shown in FIG.
When the inflow pressure of the injected molding resin 6 is applied to the side surface of the heat radiating plate 8 as shown by arrow A, a problem arises in that the heat radiating plate 8 is misaligned and is molded in a displaced state.
上記放熱板8の位置ずれは、前記真空穴90bの吸着力
によって放熱板8に加えられる保持力よりも成形樹脂乙
の流入圧力の方が強(なることによって生ずるものであ
る。The displacement of the heat sink 8 is caused by the fact that the inflow pressure of the molded resin B is stronger than the holding force applied to the heat sink 8 by the suction force of the vacuum holes 90b.
従って前記放熱板8の位置ずれを防止する方法としては
、前記下金型91にノックビンを設け、このノックビン
により放熱板8を上金型90に対して強く保持すること
が考えられる。しかしこの7ソクビンを設ける方式は成
形金型の構造が複雑になるとともに、成形品に対してノ
ックビンの跡が残る結果となり、外観上及び信頼性上の
問題が残る。Therefore, as a method for preventing the displacement of the heat sink 8, it is possible to provide a knock pin in the lower mold 91 and to firmly hold the heat sink 8 against the upper mold 90 by the knock pin. However, this method of providing seven knock-bins complicates the structure of the molding die and leaves marks from the knock-bins on the molded product, leaving problems in terms of appearance and reliability.
本発明の目的は、成形金型の構造を複雑にすることなく
、かつ放熱板の位置ずれを生じない放熱板付半導体装置
の製造方法を提供することにある。An object of the present invention is to provide a method of manufacturing a semiconductor device with a heat sink without complicating the structure of a molding die and without causing displacement of the heat sink.
上記目的を達成するための本発明の要旨は下記の通りで
ある。The gist of the present invention for achieving the above object is as follows.
複数のコンタクト端子を有する樹脂基板にICチップを
実装し、該ICチップを成形金型を用いて射出成形によ
り樹脂封止するとともに、前記射出成形によって形成さ
れた封止樹脂の上面部には、金属製の放熱板が、インサ
ートモールドによって一体化されている放熱板付半導体
装置の製造方法に於いて前記成形金型を構成する下金型
には前記樹脂基板を保持するための基板保持部を、又上
金型には前記放熱板を保持するための放熱板保持部を有
し、かつ前記上金型に保持された放熱板と、下金型に保
持された樹脂基板によって形成された空隙部に成形樹脂
を注入するための湯口を設けたことを特徴とする。An IC chip is mounted on a resin substrate having a plurality of contact terminals, and the IC chip is sealed with resin by injection molding using a molding die, and the upper surface of the sealing resin formed by the injection molding includes: In a method for manufacturing a semiconductor device with a heat sink in which a metal heat sink is integrated by insert molding, a lower mold constituting the molding die includes a substrate holding portion for holding the resin substrate; Further, the upper mold has a heat sink holding part for holding the heat sink, and a gap formed by the heat sink held by the upper mold and the resin substrate held by the lower mold. It is characterized by having a sprue for injecting molding resin into the mold.
以下図面により本発明の実施例を詳述する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
(第1実施例)
第1図は本発明の第1実施例である放熱板をインサート
モールドしたPGAの成形金型を示す要部断面図、第3
図は本発明のPGAの斜視図である。(First Embodiment) Fig. 1 is a cross-sectional view of main parts showing a PGA molding die in which a heat dissipation plate is insert-molded according to the first embodiment of the present invention.
The figure is a perspective view of the PGA of the present invention.
第1図に於いて第4図と異るところは前記下金型91の
凸部91dの高さを下げるとともに、この凸部91dに
対応して前記上金型90にも凸部90dを形成したこと
であ・る。The difference between FIG. 1 and FIG. 4 is that the height of the convex portion 91d of the lower mold 91 is lowered, and a convex portion 90d is also formed in the upper mold 90 corresponding to this convex portion 91d. That's what I did.
そして前記凸部90dと凸部91dとを各々適切な高さ
に設定することによって前記上金型90妊保持された放
熱板8と下金型91に保持された樹脂基板2とによって
形成された空隙部10の位置に湯口91cを設けたもの
である。By setting the convex portions 90d and 91d at appropriate heights, the upper mold 90 is formed by the heat sink 8 held in place and the resin substrate 2 held in the lower mold 91. A sprue 91c is provided at the position of the cavity 10.
次に第1図に示す成形金型に於いて湯口91Cより成形
樹脂6を注入した場合を考えると、湯口91cより注入
された成形樹脂6の流入圧力は矢印Bで示すごとく放熱
板8の下面側に加わることにより放熱板8は上金型90
の放熱板保持部に対して、より強く保持される結果とな
り、位置ずれの心配がな(なる。Next, considering the case where the molding resin 6 is injected from the sprue 91C in the mold shown in FIG. The heat dissipation plate 8 is attached to the upper mold 90 by applying it to the side.
As a result, the heat dissipation plate is held more firmly against the heat dissipation plate holding portion, and there is no need to worry about misalignment.
従って第3図に示すごとく放熱板8が正しくインサート
モールドされたPGAが完成し、そしてゲート残り6a
が成形樹脂乙の中間部に存在している。Therefore, as shown in Fig. 3, a PGA in which the heat sink 8 is correctly insert-molded is completed, and the remaining gate 6a is
exists in the middle part of molded resin B.
(第2実施例)
第2図は本発明の第2実施例であるPGAの成形金型を
示す要部断面図である。第1図と異るところは前記上金
型90に放熱板8を収納するための凹部90cを形成す
ることによってバーテングライン(PL)の位置を下方
に移動させ、止金型90の下面と下金型91に設けられ
た凸部91dとによって湯口91cを形成したものであ
る。(Second Embodiment) FIG. 2 is a sectional view of essential parts showing a PGA molding die according to a second embodiment of the present invention. The difference from FIG. 1 is that by forming a recess 90c in the upper mold 90 to accommodate the heat dissipation plate 8, the position of the bartending line (PL) is moved downward, and the lower surface of the stopper mold 90 and the bottom A sprue 91c is formed by a convex portion 91d provided on the mold 91.
上記構成に於いても第1実施例と同様湯口91cが空隙
部10の位置に設けられているため成形樹脂6の流入圧
力は矢印Bで示すごとく放熱板8を上金型90の放熱板
保持部に対して強く保持させる効果を有する。In the above configuration, as in the first embodiment, the sprue 91c is provided at the position of the cavity 10, so that the inflow pressure of the molded resin 6 is applied to the heat sink 8 as shown by arrow B. It has the effect of strongly holding against the parts.
上記のごとく本発明によれば、成形金をの湯口の位置を
放熱板と樹脂基板とにより形成される空隙部に設定する
ことによって放熱板の位置ずれを防止することが出来る
ため、上金型に対する放熱板の保持を真空吸着のごとく
、極めて簡単な方式にて行うことが可能となる。As described above, according to the present invention, by setting the sprue of the molding metal in the gap formed by the heat sink and the resin substrate, it is possible to prevent the heat sink from shifting. The heat dissipation plate can be held in an extremely simple manner, such as by vacuum suction.
この結果、成形金型の構造としては、ノックビンを必要
としない単純な構成とすることが出来、又、完成された
成形品にはノックビンの跡や、放熱板の変位等が発生し
ないため、外観品質及び信頼性の優れた放熱板付半導体
装置を提供する上で大なる効果を有する。As a result, the structure of the molding die can be made simple and does not require a knock bottle, and the completed molded product will not have knock bottle marks or displacement of the heat sink, so the appearance This has a great effect in providing a semiconductor device with a heat sink with excellent quality and reliability.
第1図及び第2図は本発明の放熱板をインサートモール
ドしたPGAの成形金型を示す要部断面図、第3図は本
発明PGAの外観斜視図、第4図は従来の放熱板をイン
サートモールドしたPGAの成形金型を示す要部断面図
である。
1・・・・・・ICチップ、 2・・・・・・樹脂基
板、6・・・・・・成形樹脂、 8・・・・・・放
熱板。
90・・・・・・上金型、 ?1・・・・・・下金
型。
第
図
第
図
U
第
図Figures 1 and 2 are sectional views of essential parts showing a PGA molding die in which the heat sink of the present invention is insert-molded, Figure 3 is an external perspective view of the PGA of the present invention, and Figure 4 is a view of a conventional heat sink. FIG. 2 is a cross-sectional view of a main part showing a molding die for insert-molded PGA. 1...IC chip, 2...resin substrate, 6...molded resin, 8...heat sink. 90... Upper mold? 1...Lower mold. Figure Figure U Figure
Claims (1)
実装し、該ICチップを成形金型を用いて射出成形によ
り樹脂封止するとともに、前記射出成形によって形成さ
れた封止樹脂の上面部には、金属製の放熱板が、インサ
ートモールドによって一体化されている放熱板付半導体
装置の製造方法に於いて前記成形金型を構成する下金型
には前記樹脂基板を保持するための基板保持部を、又上
金型には前記放熱板を保持するための放熱板保持部を有
し、かつ前記上金型に保持された放熱板と、下金型に保
持された樹脂基板によって形成された空隙部に成形樹脂
を注入するための湯口を設けたことを特徴とする放熱板
付半導体装置の製造方法。An IC chip is mounted on a resin substrate having a plurality of contact terminals, and the IC chip is sealed with resin by injection molding using a molding die, and the upper surface of the sealing resin formed by the injection molding includes: In a method for manufacturing a semiconductor device with a heat sink in which a metal heat sink is integrated by insert molding, a lower mold constituting the molding die includes a substrate holding portion for holding the resin substrate; Further, the upper mold has a heat sink holding part for holding the heat sink, and a gap formed by the heat sink held by the upper mold and the resin substrate held by the lower mold. 1. A method for manufacturing a semiconductor device with a heat sink, characterized in that a sprue is provided for injecting molding resin into the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63208591A JP2585387B2 (en) | 1988-08-23 | 1988-08-23 | Method of manufacturing semiconductor device with heat sink |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63208591A JP2585387B2 (en) | 1988-08-23 | 1988-08-23 | Method of manufacturing semiconductor device with heat sink |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0258243A true JPH0258243A (en) | 1990-02-27 |
JP2585387B2 JP2585387B2 (en) | 1997-02-26 |
Family
ID=16558730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63208591A Expired - Lifetime JP2585387B2 (en) | 1988-08-23 | 1988-08-23 | Method of manufacturing semiconductor device with heat sink |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2585387B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5147821A (en) * | 1990-09-28 | 1992-09-15 | Motorola, Inc. | Method for making a thermally enhanced semiconductor device by holding a leadframe against a heatsink through vacuum suction in a molding operation |
WO1997031394A1 (en) * | 1996-02-22 | 1997-08-28 | Nitto Denko Corporation | Semiconductor device and method for manufacturing the same |
-
1988
- 1988-08-23 JP JP63208591A patent/JP2585387B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5147821A (en) * | 1990-09-28 | 1992-09-15 | Motorola, Inc. | Method for making a thermally enhanced semiconductor device by holding a leadframe against a heatsink through vacuum suction in a molding operation |
WO1997031394A1 (en) * | 1996-02-22 | 1997-08-28 | Nitto Denko Corporation | Semiconductor device and method for manufacturing the same |
US6144108A (en) * | 1996-02-22 | 2000-11-07 | Nitto Denko Corporation | Semiconductor device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JP2585387B2 (en) | 1997-02-26 |
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