JPH0256915A - Solid electrolytic capacitor - Google Patents
Solid electrolytic capacitorInfo
- Publication number
- JPH0256915A JPH0256915A JP20921388A JP20921388A JPH0256915A JP H0256915 A JPH0256915 A JP H0256915A JP 20921388 A JP20921388 A JP 20921388A JP 20921388 A JP20921388 A JP 20921388A JP H0256915 A JPH0256915 A JP H0256915A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- graphite
- silver
- electrolytic capacitor
- solid electrolytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 20
- 239000007787 solid Substances 0.000 title claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 25
- 239000010439 graphite Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 22
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001252 Pd alloy Inorganic materials 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000010953 base metal Substances 0.000 claims abstract description 6
- 239000011256 inorganic filler Substances 0.000 claims abstract description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052709 silver Inorganic materials 0.000 abstract description 13
- 239000004332 silver Substances 0.000 abstract description 13
- 230000005012 migration Effects 0.000 abstract description 4
- 238000013508 migration Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000007747 plating Methods 0.000 description 15
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229920002857 polybutadiene Polymers 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241001235534 Graphis <ascomycete fungus> Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体電解コンデンサに関し、特に陰極導電体層
の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid electrolytic capacitor, and particularly to the structure of a cathode conductor layer.
従来の固体電解コンデンサは第２図に示すように弁作用
を有する金属の粉末が加圧成型されてなる陽極体１１に
弁作用を有する金属線１２が陽極リードとして予め植立
され、真空中で焼結され、陽極酸化の手法により陽極体
１１の外周面に酸化膜層が形成され、この酸化膜層の外
周面に対向電極として二酸化マンガン等の半導体層が形
成され、さらに接触抵抗を減らすためのグラファイト層
１３を介して陰極（導電体）層が形成されコンデンサ素
子が構成される。As shown in FIG. 2, in a conventional solid electrolytic capacitor, a metal wire 12 having a valve action is planted in advance as an anode lead on an anode body 11 which is made by press-molding metal powder having a valve action, and the metal wire 12 has a valve action as an anode lead. An oxide film layer is formed on the outer peripheral surface of the anode body 11 by sintering and anodic oxidation, and a semiconductor layer such as manganese dioxide is formed as a counter electrode on the outer peripheral surface of this oxide film layer to further reduce contact resistance. A cathode (conductor) layer is formed through the graphite layer 13 to form a capacitor element.
上述した従来のコンデンサ素子は銀ペースト層を持つた
め湿気雰囲気中に放置すると銀のマイグレーションが起
き漏洩電流が増大する欠点がある。Since the above-mentioned conventional capacitor element has a silver paste layer, it has a drawback that when left in a humid atmosphere, silver migration occurs and leakage current increases.
また、従来のコンデンサ素子は高価な銀ペーストを使用
するなめに製品コストが高くなる欠点がある。Furthermore, conventional capacitor elements use expensive silver paste, resulting in high product costs.
これら２点の解決策としてパラジウム粉末を含むグラフ
ァイト層を形成した後に無電解めっきの手法により銅、
ニッケル等のめっき層を形成する方法が提案されている
。しかしながらこのような構造の固体電解コンデンサは
銀ペーストを使用しないかわりに少量ではあるがパラジ
ウム粉末を使用するのでそれほどコストが低減しないと
いう欠点がある。As a solution to these two problems, after forming a graphite layer containing palladium powder, copper is coated using electroless plating.
A method of forming a plating layer of nickel or the like has been proposed. However, a solid electrolytic capacitor having such a structure does not use silver paste, but instead uses palladium powder, albeit in a small amount, and therefore has the disadvantage that the cost cannot be reduced much.
本発明の目的は、高価でしかも湿気雰囲気中では銀のマ
イグレーションを発生する銀ベース層を使用することな
く、また第２のグラファイト層として高価なパラジウム
粉末のみを含有するグラファイト層を用いることなく品
質がすぐれ、しかも安価な固体電解コンデンサを提供す
ることにある。The object of the present invention is to improve quality without using an expensive silver base layer that causes silver migration in a humid atmosphere, and without using a graphite layer containing only expensive palladium powder as a second graphite layer. The purpose of the present invention is to provide a solid electrolytic capacitor with excellent quality and low cost.
本発明の固体電解コンデンサは、陽極リードが植立され
た弁作用金属からなる陽極体上に誘電体酸化膜層と半導
体酸化物層、第１のグラファイト層、第２のグラファイ
ト層、卑金属層を有する陰極層とを持つ固体電解コンデ
ンサにおいて、前記第２のグラファイト層がグラファイ
ト粉末、銀−パラジウム合金粉末、無機フィラー及び樹
脂を有する混合物から形成されることを特徴として構成
される。The solid electrolytic capacitor of the present invention has a dielectric oxide film layer, a semiconductor oxide layer, a first graphite layer, a second graphite layer, and a base metal layer on an anode body made of a valve metal on which an anode lead is planted. In the solid electrolytic capacitor having a cathode layer, the second graphite layer is formed from a mixture containing graphite powder, silver-palladium alloy powder, inorganic filler, and resin.
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例の樹脂モールド型固体電解コンデン
サの断面図である。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a sectional view of a resin molded solid electrolytic capacitor according to an embodiment of the present invention.
第１図において、弁作用を有する金属の１つであるタン
タル粉末が加圧成型され立され真空焼結された陽極体１
にはタンタル材の陽極リード２が植立され、陽極体１の
外周面には図には示していないが酸化膜層及び二酸化マ
ンガン層が形成され、その外側に陽極リード植立面を除
き第１のグラファイト層４が形成される。陽極体の陽極
リード植立面にはブタジェン樹脂が塗布され、加熱され
ることにより被覆樹脂層５が形成される。更に銀−パラ
ジウム合金粉末を含む第２のグラファイト層６、卑金属
層であるニッケルめっき層７が順次陽極リード植立面以
外の陽極体外周面に形成される。陽極リード２の先端部
には外部陽極端子３が溶接され又、ニッケルめっき層７
には外部陰極端子９がはんだ層８によって接続されて、
コンデンサ素子全体が熱硬化性樹脂からなる外装絶縁樹
脂層１０によってモールド外装されて本発明の一実施例
の樹脂モールド型の固体電解コンデンサが構成される。In FIG. 1, an anode body 1 in which tantalum powder, which is one of the metals having a valve action, is pressure-molded and vacuum-sintered.
An anode lead 2 made of tantalum material is planted on the outer surface of the anode body 1, and an oxide film layer and a manganese dioxide layer are formed on the outer peripheral surface of the anode body 1 (not shown in the figure). 1 graphite layer 4 is formed. Butadiene resin is applied to the anode lead planting surface of the anode body and heated to form a coating resin layer 5. Further, a second graphite layer 6 containing a silver-palladium alloy powder and a nickel plating layer 7 which is a base metal layer are sequentially formed on the outer peripheral surface of the anode body other than the anode lead planting surface. An external anode terminal 3 is welded to the tip of the anode lead 2, and a nickel plating layer 7 is also welded to the tip of the anode lead 2.
to which an external cathode terminal 9 is connected by a solder layer 8,
The entire capacitor element is molded and packaged with an exterior insulating resin layer 10 made of a thermosetting resin to constitute a resin molded solid electrolytic capacitor according to an embodiment of the present invention.
次に、このような構成の樹脂モールド型タンタル固体電
解コンデンサの製造方法について説明する。Next, a method for manufacturing a resin molded tantalum solid electrolytic capacitor having such a structure will be described.
加圧成型されたタンタル粉末が高温で真空焼結され、タ
ンタル材の陽極リード２が植立された陽極体１は燐酸水
溶液中で化成電圧１００Ｖにより陽極酸化され全外周面
にタンタル酸化膜が形成され、次に、硝酸マンガン溶液
中に浸漬して含浸させ、その後２５０〜３００℃の雰囲
気中で熱分解され二酸化マンガン層が形成される。この
浸漬および熱分解は均一な二酸化マンガン層を得るため
に複数回行われる。次に、水溶性高分子材の水溶液にグ
ラファイト粉末を懸濁したグラフディト溶液中に二酸化
マンガン層が形成され陽極体１が浸漬され、１５０〜２
００℃の雰囲気中で乾燥されて第１のグラファイト層４
が形成される。Pressure-molded tantalum powder is vacuum sintered at high temperature, and the anode body 1 with the tantalum anode lead 2 planted thereon is anodized in a phosphoric acid aqueous solution at a formation voltage of 100 V to form a tantalum oxide film on the entire outer peripheral surface. Next, it is immersed in a manganese nitrate solution to impregnate it, and then thermally decomposed in an atmosphere of 250 to 300°C to form a manganese dioxide layer. This soaking and pyrolysis is carried out multiple times to obtain a uniform manganese dioxide layer. Next, a manganese dioxide layer is formed in a graphite solution in which graphite powder is suspended in an aqueous solution of a water-soluble polymeric material, and the anode body 1 is immersed in the solution.
The first graphite layer 4 is dried in an atmosphere of 00°C.
is formed.
次に、ポリブタジェン樹脂をデイスペンサによって陽極
リード植立面に塗布後、１５０〜２００℃の雰囲気中で
乾燥されて被覆樹脂層５が形成される。Next, polybutadiene resin is applied to the anode lead planting surface using a dispenser and then dried in an atmosphere of 150 to 200° C. to form a coating resin layer 5.
次に、エポキシ樹脂２０〜５０％、グラフアイｌ−粉末
５〜３０％、無機フィラー２０〜５０％銀−パラジウム
合金粉末１〜１０％が重量比で混きされ、ブチルセロソ
ルブで希釈した混合液中に被覆樹脂層と接する位置まで
浸漬され、１５０〜２００℃の雰囲気中で熱硬化されて
第２のグラファイト層６が形成される。なお、第２のグ
ラファイト層中の銀−パラジウム合金粉末はめっき触媒
として又、無機フィラーは表面の凹凸をつくりアンカー
効果によりめっき被膜の密着力を高める効果がある。な
お、銀−パラジウム合金は、銀とパラジウムの割合が重
量比で８：２のものを使用した。Next, 20 to 50% of epoxy resin, 5 to 30% of Graphi l-powder, 20 to 50% of inorganic filler, and 1 to 10% of silver-palladium alloy powder are mixed in a weight ratio, and the mixture is diluted with butyl cellosolve. The second graphite layer 6 is formed by being immersed in the graphite layer 6 to a position in contact with the coating resin layer, and then thermally hardened in an atmosphere of 150 to 200°C. The silver-palladium alloy powder in the second graphite layer acts as a plating catalyst, and the inorganic filler creates surface irregularities and has the effect of increasing the adhesion of the plating film due to its anchor effect. The silver-palladium alloy used had a weight ratio of silver to palladium of 8:2.
なお、銀−パラジウム合金の銀とパラジウムの割合は実
験の結果からパラジウムの割合が多くなるに従って、め
っき触媒の効果を増大しその上に形成する卑金属層の密
着力を高めることができ、また銀の割合が多くなると耐
湿性は向上するが過度に多くなると再び耐熱性は低下す
る。The ratio of silver and palladium in the silver-palladium alloy has been determined from experimental results.As the ratio of palladium increases, the effect of the plating catalyst increases and the adhesion of the base metal layer formed thereon increases. As the proportion increases, the moisture resistance improves, but when the proportion increases excessively, the heat resistance decreases again.
更に、容積比１０％のパラジウム含有塩酸水溶液中に２
〜３分浸漬し銀−パラジウム表面が活性化された後、純
水洗浄して無電解めっきを行う。Furthermore, 2
After being immersed for ~3 minutes to activate the silver-palladium surface, it is washed with pure water and electroless plating is performed.
第２のグラファイト層６を除く陽極リード２の周辺部は
被覆樹脂層５で覆われているので反応時のガスから陽極
体の二酸化マンガン層や酸化膜は保護される。めっき液
としては例えばジメチルアミノボランを還元剤とする無
電解ニッケルめっき液（室温においてｐＨ−６，７）を
使用し６５℃で４０分のめっきが行われ、約４〜５ Ｉ
ｔ ｍのニッケルめっき層７が形成される。めっき終了
後は全体が十分水洗され１２０〜１５０℃の恒温槽中に
放置され水分を蒸発させる。Since the peripheral portion of the anode lead 2 except for the second graphite layer 6 is covered with the coating resin layer 5, the manganese dioxide layer and oxide film of the anode body are protected from the gas during the reaction. As a plating solution, for example, an electroless nickel plating solution (pH -6, 7 at room temperature) using dimethylaminoborane as a reducing agent is used, and plating is carried out at 65°C for 40 minutes, resulting in approximately 4 to 5 I
A nickel plating layer 7 of t m is formed. After plating is completed, the entire plate is thoroughly washed with water and left in a constant temperature bath at 120 to 150°C to evaporate moisture.
更に、はんだ付可能材料の外部陽極端子３が陽極リード
２に溶接され、又、ニッケルめっきＮ７上にはんだペー
ストを介して外部陰極端子９を置く。そして赤外線リフ
ローを行うことによってはんだペーストをはんだ層８と
して形成させ、ニッケルめっき層７と外部陰極端子９と
を電気的に接続させる。Furthermore, an external anode terminal 3 of solderable material is welded to the anode lead 2, and an external cathode terminal 9 is placed on the nickel plating N7 via solder paste. Then, by performing infrared reflow, the solder paste is formed as a solder layer 8, and the nickel plating layer 7 and the external cathode terminal 9 are electrically connected.
最後に、コンデンサ素子は熱硬化性樹脂からなる外装絶
縁樹脂層１０によってモールド外装され、外部陽極端子
３と外部陰極端子９を折り曲げることにより樹脂モール
ド型の固体電解コンデンサが形成される。Finally, the capacitor element is molded and packaged with an exterior insulating resin layer 10 made of thermosetting resin, and a resin molded solid electrolytic capacitor is formed by bending the external anode terminal 3 and the external cathode terminal 9.
なお、本実施例では陽極リード植立面に形成する被覆樹
脂層の材料としてポリブタジェン樹脂を使用したが、こ
の材料はめっき反応時に発生する水素から酸化膜や二酸
化マンガン層を保護するために使用するものであること
から、エポキシ、アクリル、ポリエステル、ポリ塩化ビ
ニル、ポリプロピレン等の樹脂及びこれらの混合樹脂を
使用しても良い。 また、本実施例では卑金属としてニ
ッケル層を使用したが、銅の無電解めっき層を使用して
もよい。In this example, polybutadiene resin was used as the material for the coating resin layer formed on the anode lead planting surface, but this material is used to protect the oxide film and manganese dioxide layer from hydrogen generated during the plating reaction. Therefore, resins such as epoxy, acrylic, polyester, polyvinyl chloride, polypropylene, and mixed resins thereof may be used. Further, in this embodiment, a nickel layer is used as the base metal, but an electroless plated layer of copper may also be used.
以上説明したように本発明は、陰極層に銀ペーストを使
用せず、また第２のグラファイト層に含まれるパラジウ
ム粉末にかえて銀−パラジウム合金粉末を含ませたこと
により下記の効果がある。As explained above, the present invention has the following effects by not using silver paste in the cathode layer and by including silver-palladium alloy powder instead of the palladium powder contained in the second graphite layer.
（１）高価な銀ペーストを全く使用しないので製品コス
トを大幅に低減することができ、湿気雰囲気中おける銀
のマイグレーションがなく、固体電解コンデンサの品質
が向上する。(1) Since no expensive silver paste is used, the product cost can be significantly reduced, and there is no migration of silver in a humid atmosphere, improving the quality of the solid electrolytic capacitor.
（２）第２のグラファイト層にパラジウム粉末ではなく
、銀−パラジウム合金粉末を使用しているので製品コス
トを大幅に低減できる。(2) Since silver-palladium alloy powder is used instead of palladium powder for the second graphite layer, product cost can be significantly reduced.
っき層、８・・・はんだ層、９・・・外部陰極端子、１
０・・・外装絶縁樹脂層、１１・・・陽極体、１２・・
・陽極リード、１３・・・グラファイト層、１４・・・
銀ペースト層。Plating layer, 8... Solder layer, 9... External cathode terminal, 1
0... Exterior insulating resin layer, 11... Anode body, 12...
・Anode lead, 13...graphite layer, 14...
silver paste layer.
Claims (1)
に、誘電体酸化膜層と、半導体酸化物層，第１のグラフ
ァイト層，第２のグラファイト層，卑金属層を有する陰
極層とを持つ固体電解コンデンサにおいて、前記第２の
グラファイト層が、グラファイト粉末，銀−パラジウム
合金粉末，無機フィラー及び樹脂を有する混合物から形
成されることを特徴とする固体電解コンデンサ。A cathode layer having a dielectric oxide film layer, a semiconductor oxide layer, a first graphite layer, a second graphite layer, and a base metal layer is provided on an anode body made of a valve metal with an anode lead planted thereon. A solid electrolytic capacitor, wherein the second graphite layer is formed from a mixture containing graphite powder, silver-palladium alloy powder, inorganic filler, and resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20921388A JPH0256915A (en) | 1988-08-22 | 1988-08-22 | Solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20921388A JPH0256915A (en) | 1988-08-22 | 1988-08-22 | Solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0256915A true JPH0256915A (en) | 1990-02-26 |
Family
ID=16569224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20921388A Pending JPH0256915A (en) | 1988-08-22 | 1988-08-22 | Solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0256915A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000022636A1 (en) * | 1998-10-12 | 2000-04-20 | Epcos Ag | Tantalum electrolytic capacitor |
| US6072183A (en) * | 1991-09-18 | 2000-06-06 | Canon Kabushiki Kaisha | Stage device for an exposure apparatus and semiconductor device manufacturing method which uses said stage device |
| WO2004055843A1 (en) * | 2002-12-13 | 2004-07-01 | Sanyo Electric Co.,Ltd. | Solid electrolytic capacitor and method for manufacturing same |
-
1988
- 1988-08-22 JP JP20921388A patent/JPH0256915A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6072183A (en) * | 1991-09-18 | 2000-06-06 | Canon Kabushiki Kaisha | Stage device for an exposure apparatus and semiconductor device manufacturing method which uses said stage device |
| US6504160B2 (en) | 1991-09-18 | 2003-01-07 | Canon Kabushiki Kaisha | Stage device for an exposure apparatus and semiconductor device manufacturing method which uses said stage device |
| WO2000022636A1 (en) * | 1998-10-12 | 2000-04-20 | Epcos Ag | Tantalum electrolytic capacitor |
| WO2004055843A1 (en) * | 2002-12-13 | 2004-07-01 | Sanyo Electric Co.,Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| US7154743B2 (en) | 2002-12-13 | 2006-12-26 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
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