JPH025515A - Organic metal vapor growth device - Google Patents
Organic metal vapor growth deviceInfo
- Publication number
- JPH025515A JPH025515A JP15656988A JP15656988A JPH025515A JP H025515 A JPH025515 A JP H025515A JP 15656988 A JP15656988 A JP 15656988A JP 15656988 A JP15656988 A JP 15656988A JP H025515 A JPH025515 A JP H025515A
- Authority
- JP
- Japan
- Prior art keywords
- crystal substrate
- nozzles
- material gas
- nozzle
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 238000001947 vapour-phase growth Methods 0.000 claims description 17
- 238000005507 spraying Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 37
- 239000002994 raw material Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BLJHFCVPKWOHJX-UHFFFAOYSA-N ethylgallium Chemical compound CC[Ga] BLJHFCVPKWOHJX-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
気相成長法によって半導体デバイスを製造するを機金属
気相成長装置に関し、
結晶基板上に均一なエピタキシャル層を効率的に形成す
ることを目的とし、
加熱された結晶基板面に複数のノズルから噴出する流量
制御された原料ガスを吹きつけて、該結晶基板面にエピ
タキシャル層を気相成長させる有機金属気相成長装置で
あって、結晶基板と近接した位置にノズルの外側周囲に
該ノズルと平行に貫通する空隙部を備えた複数のノズル
を前記結晶基板の全面を覆うように配置し、更に上記空
隙部に、原料ガスの噴出方向と逆方向に吸引する排気手
段を直結して構成する。[Detailed Description of the Invention] [Summary] This invention relates to a metal-mechanical vapor phase growth apparatus for manufacturing semiconductor devices by a vapor phase growth method, and is aimed at efficiently forming a uniform epitaxial layer on a crystal substrate. A metal-organic vapor phase growth apparatus that grows an epitaxial layer on the surface of a crystal substrate in a vapor phase by spraying source gas with a controlled flow rate ejected from a plurality of nozzles onto the surface of the crystal substrate, A plurality of nozzles each having a cavity extending parallel to the nozzle around the outside of the nozzle are arranged so as to cover the entire surface of the crystal substrate, and a plurality of nozzles are placed in the cavity in a direction opposite to the direction in which the source gas is ejected. It is constructed by directly connecting an exhaust means for suction.
本発明は気相成長方法による半導体デバイスの製造装置
に係り、特に結晶基板上に均一なエピタキシャル層を効
率的に形成して生産性の向上を図った有機金属気相成長
装置に関する。The present invention relates to an apparatus for manufacturing semiconductor devices using a vapor phase growth method, and more particularly to an organometallic vapor phase growth apparatus that efficiently forms a uniform epitaxial layer on a crystal substrate to improve productivity.
チャンバ内の加熱された結晶基板上に原料成分を含むガ
ス体(以下原料ガスとする)を吹き付けて該基板上にエ
ピタキシャル層を形成する場合、基板上の結晶層に拡散
する原料成分の量は該基板上を流れる原料ガスの流量に
大きく左右される。When forming an epitaxial layer on a heated crystal substrate in a chamber by spraying a gas containing raw material components (hereinafter referred to as raw material gas) on the substrate, the amount of raw material components diffused into the crystal layer on the substrate is It largely depends on the flow rate of the source gas flowing over the substrate.
従って基板の全面に均一なエピタキシャル層を形成する
には、原料ガスを全面に亙って均一な量で且つ均一な流
速分布になるように吹き付けることが必要である。Therefore, in order to form a uniform epitaxial layer over the entire surface of the substrate, it is necessary to spray the raw material gas in a uniform amount and with a uniform flow velocity distribution over the entire surface.
第2図は従来の気相成長装置の一例を説明する図であり
、(A)は全体の構成図を示しくB)および(C)は主
要部を拡大してガスの流れを説明する図である。FIG. 2 is a diagram illustrating an example of a conventional vapor phase growth apparatus, in which (A) shows the overall configuration, and B) and (C) are enlarged views of the main parts to explain the flow of gas. It is.
第2図(A)で、チャンバ1には図示されていない外部
回転機構部に連結して例えば図示R方向に回転する回転
軸2が装着されており、該回転軸2の上部フランジ面2
aには上記チャンバ1の外部に設けたコイル3によって
加熱されるカーボン(炭素)よりなるサセプタ4が固定
されている。In FIG. 2(A), a rotating shaft 2 that is connected to an external rotation mechanism (not shown) and rotates, for example, in the direction R shown in the drawing, is attached to the chamber 1, and an upper flange surface 2 of the rotating shaft 2 is attached to the chamber 1.
A susceptor 4 made of carbon and heated by a coil 3 provided outside the chamber 1 is fixed to a.
また表面(図では上面)にエピタキシャル層を形成する
被加工結晶基Fi5は、上記サセプタ4の回転中心に合
致するように中心を合わせてitされている。Further, the crystal group Fi5 to be processed, which forms an epitaxial layer on the surface (upper surface in the figure), is centered so as to coincide with the rotation center of the susceptor 4.
一方原料ガス供給系6から送出される原料ガス7は、配
管8を経由した後上記チャンバ1の上部近傍に装着され
ている複数のノズル9から上記結晶基板5の表面に噴出
するが、この際ノズルの位置によって噴出する原料ガス
7の流量を変えると良好なエピタキシャル層が得られる
ことからノズル9の直前部分に10で示す流量調節部を
設はノズル毎の流量が調節できるようにしている。On the other hand, the raw material gas 7 sent out from the raw material gas supply system 6 passes through the piping 8 and is ejected onto the surface of the crystal substrate 5 from a plurality of nozzles 9 installed near the top of the chamber 1. Since a good epitaxial layer can be obtained by changing the flow rate of the ejected raw material gas 7 depending on the position of the nozzle, a flow rate adjustment section 10 is provided in front of the nozzle 9 so that the flow rate for each nozzle can be adjusted.
なお図の11は、結晶基板5の表面で拡散処理が終了し
た後の原料ガス7を排出するための排気ポンプである。Note that reference numeral 11 in the figure is an exhaust pump for discharging the raw material gas 7 after the diffusion process has been completed on the surface of the crystal substrate 5.
ここでチャンバ1内を0.1気圧程度に減圧し、結晶基
板5をサセプタ4で650°C前後に加熱した状態で回
転軸2を60rpm程度に回転させながら、例えばトリ
メチルインジウムTMIn、 )リエチルガリウムT
EGa + アルシンへ3113を原料とし水素ガスH
2をキャリアとした原料ガス7を2〜3 m/s6(の
流速で図示りの如く該結晶基板5の表面に吹き付けて、
例えばインジウム・ガリウム・砒素InGaAsのエピ
タキシャル層を均一な厚さで形成するようにしている。Here, the pressure inside the chamber 1 is reduced to about 0.1 atm, and while the crystal substrate 5 is heated to about 650°C by the susceptor 4 and the rotating shaft 2 is rotated at about 60 rpm, for example, trimethylindium TMIn, ) ethyl Gallium T
Hydrogen gas H using 3113 as raw material to EGa + arsine
2 as a carrier is blown onto the surface of the crystal substrate 5 at a flow rate of 2 to 3 m/s6 (as shown in the figure),
For example, an epitaxial layer of indium, gallium, and arsenic (InGaAs) is formed to have a uniform thickness.
ノズル9の部分を拡大した図(B)で、上記ノズル9は
ノズル9a、 9b、 9c、 9dの4個が一列に整
列した状態で構成されており、この整列した4個のノズ
ルが直径方向に並ぶ位置で且つ該ノズルの原料ガス噴出
口から約10〜20mm程度離した位置に上記結晶基板
5を配置している。In the enlarged view (B) of the nozzle 9, the nozzle 9 is composed of four nozzles 9a, 9b, 9c, and 9d aligned in a line, and these four aligned nozzles are diametrically aligned. The crystal substrate 5 is arranged at a position parallel to the nozzle and approximately 10 to 20 mm away from the raw material gas outlet of the nozzle.
この状態で各ノズルから原料ガスを噴出させると、例え
ば9bおよび9cのノズルから噴出する原料ガス7b、
7cは結晶基板5の表面でエピタキシャル成長を行いな
がら図の■、■の二方向に進む。When raw material gas is jetted from each nozzle in this state, for example, raw material gas 7b jetted from nozzles 9b and 9c,
7c progresses in the two directions indicated by ■ and ■ in the figure while performing epitaxial growth on the surface of the crystal substrate 5.
−万両端にある9aおよび9dのノズルから噴出する原
料ガス7aおよび7dは図示の如く■、■、■の三方向
に進む。- The raw material gases 7a and 7d ejected from the nozzles 9a and 9d at both ends advance in three directions (1), (2), and (2) as shown in the figure.
従って両端にあるノズル9aと9dの流量を中央部に位
置するノズル9b、9cよりも増やす(例えば約1.3
倍とする)ことによって均一なエピタキシャル層の形成
を可能としている。Therefore, the flow rate of the nozzles 9a and 9d at both ends is increased compared to the nozzles 9b and 9c located in the center (for example, about 1.3
This makes it possible to form a uniform epitaxial layer.
すなわち、結晶基板5を回転させない状態での原料ガス
の膜厚分布を示す図(C)で、X方向は図(B)のX方
向に、またY方向は図(B)のY方向にそれぞれ対応し
ている。That is, in the diagram (C) showing the film thickness distribution of the source gas when the crystal substrate 5 is not rotated, the X direction corresponds to the X direction in Figure (B), and the Y direction corresponds to the Y direction in Figure (B). Compatible.
この場合、X方向の膜厚分布は両端に位置するノズルか
らのガス流量を図(B)で説明した如(中央部に比べて
多くしているためその分布曲線Cには図示C+、CTT
の2個の山が形成される。In this case, the film thickness distribution in the
Two mountains are formed.
一方Y方向の膜厚分布はガスが吹き付けられるX線上を
最大の山とする分布曲線C1が形成されることになる。On the other hand, the film thickness distribution in the Y direction forms a distribution curve C1 having the maximum peak on the X-ray where the gas is blown.
ここで該結晶基板5を前述の如く回転させて時間的に平
均化された膜厚分布を示すガス層によって該結晶基板5
上に均一化されたエピタキシャル層の形成が実現できる
。Here, the crystal substrate 5 is rotated as described above, and a gas layer exhibiting a temporally averaged film thickness distribution is applied to the crystal substrate 5.
Formation of a uniform epitaxial layer thereon can be achieved.
しかしかかる構成になる気相成長装置では、結晶基板5
の径が例えば2in以下程度の場合には良好な結果を得
ることができるが、径が大きくなるにつれて結晶基板周
辺部での膜厚1組成およびキャリア濃度の平均値からの
ずれが大きくなって均−なエピタキシャル層の形成を困
難にしている。However, in a vapor phase growth apparatus having such a configuration, the crystal substrate 5
Good results can be obtained when the diameter of the crystal substrate is, for example, 2 inches or less, but as the diameter increases, the deviation of the film thickness composition and carrier concentration from the average values in the peripheral area of the crystal substrate increases, making it difficult to achieve uniformity. − This makes it difficult to form an epitaxial layer.
従来の構成になる気相成長装置では、径の大きいく例え
ば3in以上)結晶基板には均一で安定したエピタキシ
ャル層を形成することが出来ないと云う問題があり、ま
た複数個同時作業による生産性の向上に困難を伴うと云
う問題があった。With conventional vapor phase growth equipment, there is a problem in that it is not possible to form a uniform and stable epitaxial layer on crystal substrates with large diameters (e.g., 3 inches or more), and there is also the problem that productivity due to simultaneous operation on multiple substrates cannot be achieved. There was a problem in that it was difficult to improve the performance.
上記問題点は、加熱された結晶基板面に複数のノズルか
ら噴出する流量制御された原料ガスを吹きつけて、該結
晶基板面にエピタキシャル層を気相成長させる有機金属
気相成長装置であって、結晶基板と近接した位置にノズ
ルの外側周囲に該ノズルと平行に貫通する空隙部を備え
た複数のノズルを前記結晶基板の全面を覆うように配置
し、更に上記空隙部に、原料ガスの噴出方向と逆方向に
吸引する排気手段を直結してなる有機金属気相成長装置
によって解決される。The above-mentioned problem is an organometallic vapor phase growth apparatus in which an epitaxial layer is grown in a vapor phase on a heated crystal substrate surface by spraying source gas with a controlled flow rate ejected from a plurality of nozzles onto the surface of the crystal substrate. , a plurality of nozzles having voids extending parallel to the nozzles around the outside of the nozzles are disposed in close proximity to the crystal substrate so as to cover the entire surface of the crystal substrate, and a raw material gas is supplied to the voids. This problem can be solved by an organometallic vapor phase growth apparatus that is directly connected to an exhaust means that sucks in a direction opposite to the ejection direction.
径の大きい結晶基板上に常に安定した均一なエピタキシ
ャル層を形成するには、結晶基板上のあらゆる位置に常
時新しい原料ガスが供給されると共にエピタキシャル成
長の終了した残余の原料ガスは他の位置を通ることなく
そのまま速やかに排気されることが必要である。In order to always form a stable and uniform epitaxial layer on a large-diameter crystal substrate, new raw material gas is constantly supplied to every position on the crystal substrate, and the remaining raw material gas after epitaxial growth is passed through other positions. It is necessary that the gas be evacuated as quickly as possible.
本発明になる気相成長装置では、結晶基板の全面をカバ
ーするに足る大きさを有するノズルユニットを、ノズル
から噴出した原料ガスが該ノズルの周囲から直ちに排出
できるように空隙を持って整列させた複数のノズルで構
成している。In the vapor phase growth apparatus of the present invention, nozzle units having a size sufficient to cover the entire surface of a crystal substrate are arranged with gaps so that the raw material gas ejected from the nozzles can be immediately discharged from around the nozzles. It consists of multiple nozzles.
従って、ノズルから噴出する制御された原料ガスは、結
晶基板上でエピタキシャル成長を行った後基板上を流れ
ることなくノズルの周囲に形成された空隙からそのまま
排出されることから、該結晶基板上に安定した均一なエ
ピタキシャル層を形成することができる。Therefore, after the controlled source gas ejected from the nozzle performs epitaxial growth on the crystal substrate, it is discharged as it is from the gap formed around the nozzle without flowing over the substrate, so that it remains stable on the crystal substrate. A uniform epitaxial layer can be formed.
第1図は本発明になる気相成長装置の構成例を示す図で
あり、(A)は側面断面図をまた(B)は主要部のノズ
ルユニットを説明する図である。FIG. 1 is a diagram showing an example of the configuration of a vapor phase growth apparatus according to the present invention, in which (A) is a side cross-sectional view, and (B) is a diagram illustrating the main part of the nozzle unit.
なお、図では理解し易くするために結晶基板が1個の場
合について説明する。In addition, in the figure, for ease of understanding, the case where there is one crystal substrate will be explained.
第1図(A)で、チャンバ15には、上部にフランジ面
16aを備えた基台16が固定されており、該基台16
の上記フランジ面16a上には前記チャンバ15の外部
周上に設けたコイル3によって加熱されるカーボン(炭
素)よりなるサセプタ17が配設されている。In FIG. 1(A), a base 16 having a flange surface 16a on the upper part is fixed to the chamber 15.
A susceptor 17 made of carbon and heated by a coil 3 provided on the outer periphery of the chamber 15 is disposed on the flange surface 16a.
また表面(図では上面)にエピタキシャル層を形成する
第2図同様の被加工結晶基板5“は、上記サセプタ17
の所定位置に載置されている。Further, the crystal substrate 5'' to be processed, similar to that shown in FIG.
It is placed in a predetermined position.
一方原料ガス供給系6から送出される原料ガス7は、配
管8S経由した後上記チャンバ15の上部近傍に装着さ
れているノズルユニット18の構成要素である複数の各
ノズル19から上記結晶基板5′の表面に噴出するが、
この際ノズルの位置によって噴出する原料ガス7の流量
が変えられるように各ノズル19の直前に10で示す流
量調節部を設けている。On the other hand, the raw material gas 7 sent from the raw material gas supply system 6 passes through a pipe 8S and then passes through a plurality of nozzles 19, which are components of a nozzle unit 18 installed near the top of the chamber 15, to the crystal substrate 5'. It erupts on the surface of
At this time, a flow rate adjustment section 10 is provided immediately before each nozzle 19 so that the flow rate of the ejected raw material gas 7 can be changed depending on the position of the nozzle.
なお図の11は、第2図同様に結晶基板5“の表面でエ
ピタキシャル成長が終了した後の原料ガス7を排出する
ための排気ポンプである。11 in the figure is an exhaust pump for discharging the raw material gas 7 after the epitaxial growth has been completed on the surface of the crystal substrate 5'', as in FIG. 2.
また図(A)の図示a”−a’部における切断平面図を
示す図(B)で、ノズルユニット18は複数(図は19
個の場合を示している)の円筒状ノズル19を相互に密
着させて六角形状に整列し、その外側周囲を例えば石英
等よりなる固定板18aで固定すると共に該固定板18
aの結晶基板5′側の下端部18bを上記各ノズル19
より多少突出させて全長に亙ってサセプタ17の上面と
接するように設置している。In addition, in the figure (B) showing a cutaway plan view at the a''-a' section in figure (A), there are a plurality of nozzle units 18 (the figure shows 19
The cylindrical nozzles 19 are arranged in a hexagonal shape in close contact with each other, and the outer periphery of the nozzles 19 is fixed with a fixing plate 18a made of, for example, quartz.
The lower end 18b on the crystal substrate 5' side of a is connected to each nozzle 19.
The susceptor 17 is installed so as to protrude somewhat more and to be in contact with the upper surface of the susceptor 17 over its entire length.
この場合各ノズル19から噴出する原料ガス7は、結晶
基板5°の表面にぶつかった後各ノズル19の周囲に形
成されている三角柱状の空隙領域Cから退去せざるを得
ない状態にある。In this case, the source gas 7 ejected from each nozzle 19 is forced to leave the triangular prism-shaped void area C formed around each nozzle 19 after colliding with the 5° surface of the crystal substrate.
ここで排気ポンプ11を作動させてチャンバ15内を0
.1気圧程度に減圧し結晶基板5“をサセプタ17で6
50℃前後に加熱した状態で、第2図同様に流量調節部
10で制御された原料ガス7を例えば2〜3 m/se
cの流速で図示■の如(該結晶基板5゜の表面に吹き付
けて該結晶基板5“の表面に所要のエピタキシャル層を
形成させる。Here, the exhaust pump 11 is operated to bring the inside of the chamber 15 to zero.
.. The pressure is reduced to about 1 atm, and the crystal substrate 5'' is placed on a susceptor 17.
In the state heated to around 50°C, the raw material gas 7 controlled by the flow rate controller 10 as in FIG.
A desired epitaxial layer is formed on the surface of the crystal substrate 5'' by spraying it onto the surface of the crystal substrate 5'' as shown in the figure (2) at a flow rate of c.
この際、該結晶基板5′の表面で所定のエピタキシャル
成長が終了した残余の原料ガス7は、各ノズル19の周
囲に形成されている空隙領域Cに吸引されて■となり更
に該ノズルユニット18とチャンバ15の間の隙間領域
りを通る■となって排気ポンプ11から外部に排出され
る。At this time, the remaining raw material gas 7 after the predetermined epitaxial growth has been completed on the surface of the crystal substrate 5' is sucked into the void area C formed around each nozzle 19, and becomes . The exhaust gas passes through the gap area between the exhaust pumps 15 and 15 and is discharged to the outside from the exhaust pump 11.
従ってかかる構成になる気相成長装置では、結晶基板の
全面に制御された新しい原料ガスが常に供給できると共
に、成長終了後の残余の原料ガスは該結晶基板5′上を
流れることなくそのまま吸引排出されるため、如何なる
大きさの結晶基板でもその大きさに関係なく均一にして
安定したエピタキシャル層を該結晶基板5゛の表面に形
成することができる。Therefore, in a vapor phase growth apparatus having such a configuration, a controlled new raw material gas can be constantly supplied to the entire surface of the crystal substrate, and the remaining raw material gas after the growth is suctioned and discharged as it is without flowing over the crystal substrate 5'. Therefore, a uniform and stable epitaxial layer can be formed on the surface of the crystal substrate 5' regardless of the size of the crystal substrate.
なお、図ではチャンバ15内に1個の結晶基板5°を配
置しているが、同一チャンバ内に全く同様の方法で複数
個の結晶基板を配置することも可能である。Although one crystal substrate 5° is placed in the chamber 15 in the figure, it is also possible to place a plurality of crystal substrates in the same chamber in exactly the same manner.
本発明により、同時に複数個の結晶基板上に均一で且つ
特性的に安定したエピタキシャル層が形成できる有機金
属気相成長装置を提供することができる。According to the present invention, it is possible to provide an organometallic vapor phase epitaxy apparatus that can simultaneously form uniform and characteristically stable epitaxial layers on a plurality of crystal substrates.
第1図は本発明になる気相成長装置の構成例を示す図、
第2図は従来の気相成長装置の一例を説明する図、
である。図において、
3はコイル、 5′は結晶基板、
6は原料ガス供給系、7は原料ガス、
8は配管、 10は流量調節部、11は排気ポン
プ、
15はチャンバ、
17はサセプタ、
18aは固定板、
19はノズル、
をそれぞれ表わす。
16は基台、
18はノズルユニット、
18bは下端部、
(A)FIG. 1 is a diagram showing a configuration example of a vapor phase growth apparatus according to the present invention, and FIG. 2 is a diagram illustrating an example of a conventional vapor phase growth apparatus. In the figure, 3 is a coil, 5' is a crystal substrate, 6 is a raw material gas supply system, 7 is a raw material gas, 8 is a pipe, 10 is a flow rate adjustment section, 11 is an exhaust pump, 15 is a chamber, 17 is a susceptor, and 18a is a 19 represents a fixed plate, and 19 represents a nozzle. 16 is the base, 18 is the nozzle unit, 18b is the lower end, (A)
Claims (1)
制御された原料ガスを吹きつけて、該結晶基板面にエピ
タキシャル層を気相成長させる有機金属気相成長装置で
あって、 結晶基板と近接した位置にノズルの外側周囲に該ノズル
と平行に貫通する空隙部を備えた複数のノズルを前記結
晶基板の全面を覆うように配置し、更に上記空隙部に、
原料ガスの噴出方向と逆方向に吸引する排気手段を直結
してなることを特徴とする有機金属気相成長装置。[Scope of Claims] A metal-organic vapor phase growth apparatus for growing an epitaxial layer on a heated crystal substrate surface by spraying source gas with a controlled flow rate ejected from a plurality of nozzles onto the surface of the crystal substrate. A plurality of nozzles each having a cavity extending parallel to the nozzle around the outside of the nozzle are disposed in a position close to the crystal substrate so as to cover the entire surface of the crystal substrate, and further, in the cavity,
A metal organic vapor phase growth apparatus characterized by being directly connected to an exhaust means for sucking in a direction opposite to the direction in which source gas is ejected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15656988A JPH025515A (en) | 1988-06-24 | 1988-06-24 | Organic metal vapor growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15656988A JPH025515A (en) | 1988-06-24 | 1988-06-24 | Organic metal vapor growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH025515A true JPH025515A (en) | 1990-01-10 |
Family
ID=15630642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15656988A Pending JPH025515A (en) | 1988-06-24 | 1988-06-24 | Organic metal vapor growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH025515A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003324070A (en) * | 2002-04-30 | 2003-11-14 | Suzuki Motor Corp | Method and device of manufacturing thin film |
KR100765866B1 (en) * | 2000-06-09 | 2007-10-11 | 코바렌트 마테리얼 가부시키가이샤 | A method for growing a thin film in gaseous phase, and apparatus for growing a thin film in gaseous phase adapted to conducting the above method |
KR20200136740A (en) * | 2019-05-28 | 2020-12-08 | 경기대학교 산학협력단 | Nozzle and depositing apparatus including the nozzel |
-
1988
- 1988-06-24 JP JP15656988A patent/JPH025515A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100765866B1 (en) * | 2000-06-09 | 2007-10-11 | 코바렌트 마테리얼 가부시키가이샤 | A method for growing a thin film in gaseous phase, and apparatus for growing a thin film in gaseous phase adapted to conducting the above method |
JP2003324070A (en) * | 2002-04-30 | 2003-11-14 | Suzuki Motor Corp | Method and device of manufacturing thin film |
KR20200136740A (en) * | 2019-05-28 | 2020-12-08 | 경기대학교 산학협력단 | Nozzle and depositing apparatus including the nozzel |
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