JPH0254529B2 - - Google Patents
Info
- Publication number
- JPH0254529B2 JPH0254529B2 JP56051425A JP5142581A JPH0254529B2 JP H0254529 B2 JPH0254529 B2 JP H0254529B2 JP 56051425 A JP56051425 A JP 56051425A JP 5142581 A JP5142581 A JP 5142581A JP H0254529 B2 JPH0254529 B2 JP H0254529B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- light valve
- conductive film
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 13
- 230000031700 light absorption Effects 0.000 claims description 8
- 230000020169 heat generation Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000004990 Smectic liquid crystal Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JIXOHNQBTLYMHT-UHFFFAOYSA-N 2-octyl-6-phenylbenzonitrile Chemical group CCCCCCCCC1=CC=CC(C=2C=CC=CC=2)=C1C#N JIXOHNQBTLYMHT-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/132—Thermal activation of liquid crystals exhibiting a thermo-optic effect
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
この発明はレーザによる高精度デイスプレイ装
置における液晶ライトバルブに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid crystal light valve in a laser-based high-precision display device.
コンピユータの端末装置に使われるデイスプレ
イ装置はコンピユータの大容量と機能の向上によ
り、ますます高精度の分解能を必要とされてい
る。特にコンピユータを用いた画像処理や新聞紙
面の編集、LSIの設計では高精度でかつ部分的に
書き加え加能なデイスプレイが望まれている。従
来装置では用いているCRT（陰極線管）の分解能
を2000本以上に上げることは難しく、電子ビーム
の走査速度も早くなるために画面にチラツキを生
じてしまう。またストレージ管を用いたデイスプ
レイ装置では、螢光体の劣化を防ぐために画面輝
度が低く、部分的な消去もできなく、装置として
高価である。 Display devices used in computer terminal devices are required to have increasingly high resolution resolution due to the increased capacity and improved functionality of computers. Particularly in computer-based image processing, newspaper editing, and LSI design, displays with high precision and the ability to add partial information are desired. In conventional equipment, it is difficult to increase the resolution of the CRT (cathode ray tube) used above 2,000 lines, and the scanning speed of the electron beam also increases, causing flickering on the screen. Furthermore, display devices using storage tubes have low screen brightness to prevent deterioration of the phosphor, cannot be partially erased, and are expensive.
近年、分解能2000本以上のデイスプレイ装置と
して液晶ヘレーザ光で熱書き込みをするデイスプ
レイが有望視されており、この熱書き込み液晶デ
イスプレイについては、例えば雑誌「プロシーデ
イング・オブ・ザ・エス・アイ・デー
（Proceeding of the S.I.D.）」1978年１〜７頁に
記載の論文「レーザ選択液晶投射デイスプレイ
（LASER−ADDRESSED LIQUID CRYSTAL
PROJECTION DISPLAYS）」に詳しく述べら
れている。この論文によれば、第１図に示すよう
な液晶ライトバルブ１０にレーザ光１による走査
で画像を記録し、投射光１１を入射、反射させて
上記画像をデイスプレイすることができる。液晶
ライトバルブ１０はレーザ光吸収膜３、アルミ反
射膜４、液晶配向膜８をその上に形成したガラス
基盤２と、透明電極膜６、液晶配向膜８をその上
に形成したガラス基盤７とで液晶材５をはさんだ
構造となつている。レーザ光１が液晶ライトバル
ブ１０に入射するとレーザ光１がレーザ光吸収膜
３に吸収され熱に変換され、アルミ反射膜４、液
晶配向膜８を伝わつて液晶材５の温度を上昇させ
る。液晶材５としてはスメチツク液晶が使われ、
スメチツク液晶は温度が上昇することによつてネ
マチツク相、液体相に変化し、レーザ光１が取り
除かれた時に急冷される。この時、液体状態のラ
ンダムな液晶分子の配向状態が凍結されて散乱核
が形成される特性を有している。この散乱核は投
射光１１によつて読みだされ、スクリーン上に画
素としてデイスプレイされる。散乱核によつて
10μｍ程度の微小幅の線が形成できるので、２イ
ンチ角の液晶ライトバルブには5000本もの線が記
録されることになり、従来のCRTに比べて非常
に高分解能なデイスプレイが可能になる。デイス
プレイ画面を消去するのには、アルミ反射膜３と
透明電極膜６の間に電界を印加して液晶を再び配
向させれば良い。 In recent years, displays that thermally write with liquid crystal laser light have been viewed as promising as display devices with a resolution of 2,000 lines or more. ``Proceeding of the SID'', 1978, pages 1-7, ``LASER-ADDRESSED LIQUID CRYSTAL
PROJECTION DISPLAYS)”. According to this paper, an image can be recorded by scanning with a laser beam 1 on a liquid crystal light valve 10 as shown in FIG. 1, and the image can be displayed by making the projection light 11 incident and reflected. The liquid crystal light valve 10 includes a glass substrate 2 on which a laser light absorption film 3, an aluminum reflection film 4, and a liquid crystal alignment film 8 are formed, and a glass substrate 7 on which a transparent electrode film 6 and a liquid crystal alignment film 8 are formed. It has a structure in which a liquid crystal material 5 is sandwiched between the two. When the laser beam 1 enters the liquid crystal light valve 10, the laser beam 1 is absorbed by the laser beam absorbing film 3 and converted into heat, which is transmitted through the aluminum reflective film 4 and the liquid crystal alignment film 8 to increase the temperature of the liquid crystal material 5. Smectic liquid crystal is used as the liquid crystal material 5,
The smectic liquid crystal changes into a nematic phase and a liquid phase as the temperature rises, and is rapidly cooled when the laser beam 1 is removed. At this time, the random orientation state of the liquid crystal molecules in the liquid state is frozen and scattering nuclei are formed. These scattering nuclei are read out by the projection light 11 and displayed as pixels on the screen. by scattering nuclei
Since lines with a width of about 10 μm can be formed, as many as 5,000 lines can be recorded on a 2-inch square liquid crystal light valve, making it possible to create displays with much higher resolution than conventional CRTs. To erase the display screen, an electric field may be applied between the aluminum reflective film 3 and the transparent electrode film 6 to reorient the liquid crystal.
熱書き込み液晶ライトバルブは液晶の温度によ
る相変化を利用したものであるから、バイアス温
度を一定に保つ必要がある。通常、セル温合を一
定に保つためにセル全体を包む恒温槽を設ける手
段がとられる。 Since the thermal writing liquid crystal light valve utilizes the phase change caused by the temperature of liquid crystal, it is necessary to keep the bias temperature constant. Usually, in order to keep the cell temperature constant, a method is taken to provide a constant temperature bath that surrounds the entire cell.
第２図は液晶の消去特性を示す図であり、レー
ザ光１で記録された液晶ライトバルブ１０のアル
ミ反射膜４と透明電極６との間に電圧を印加し、
印加した電圧に対する液晶材５を通る投射光１１
の反射光量を示したものである。実線イはレーザ
光１を入射していない時の特性で、電圧をE2以
上に上げると液晶材５は全面が透明になり始め
E3以上で完全に画像が消えて透明になる。実線
ロはレーザ光を照射しながら電圧を加えた時の液
晶材５の反射光量を示すもので、透明になる電圧
はE2に比べて低いE1の電圧で透明になる。一度
透明になると電圧を下げてもその透明状態は持続
する。したがつて、液晶ライトバルブのデイスプ
レイには３つのモードが存在する。(A)の領域では
レーザ光で記録された画像が残るストレージモー
ドであり、(B)の領域ではレーザ光が照射した所が
消えてしまう部分消去のモードである。Ｃの領域
ではレーザ光が照射しているかしていないかにか
かわらず、全面の画像が消えてしまう全面消去の
モードである。この時、液晶は透明でデイスプレ
イとしては明るい画面になる。 FIG. 2 is a diagram showing the erasing characteristics of the liquid crystal, in which a voltage is applied between the aluminum reflective film 4 of the liquid crystal light valve 10 recorded by the laser beam 1 and the transparent electrode 6,
Projection light 11 passing through the liquid crystal material 5 for applied voltage
This shows the amount of reflected light. The solid line A shows the characteristics when the laser beam 1 is not incident, and when the voltage is increased above E2 , the entire surface of the liquid crystal material 5 begins to become transparent.
At E 3 or higher, the image completely disappears and becomes transparent. The solid line B indicates the amount of light reflected by the liquid crystal material 5 when a voltage is applied while irradiating the laser beam, and the liquid crystal material 5 becomes transparent at a voltage of E1 , which is lower than that of E2 . Once it becomes transparent, it remains transparent even if the voltage is lowered. Therefore, there are three modes in the display of the liquid crystal light valve. The area (A) is a storage mode in which the image recorded with the laser beam remains, and the area (B) is a partial erase mode in which the area irradiated with the laser beam disappears. In area C, the entire image is erased regardless of whether the laser beam is irradiated or not, which is the entire erase mode. At this time, the liquid crystal is transparent and becomes a bright screen.
以上に述べたように、液晶ライトバルブは白地
に黒地のデイスプレイをするというネガテイブモ
ードの表示装置で、部分消去ができることに特徴
をもつ。黒地に白地のポジテイブモードのデイス
プレイをするためには、一度レーザ光で全面をス
トレージモードで走査して黒地にし、レーザ光で
再び部分消去モードで白地を記録する必要があ
る。しかし、現状のレーザ光走査では一画面の表
示に数秒を要するので、この方法によるポジテイ
ブモードのデイスプレイは実用的でない。多色カ
ラーのデイスプレイをおこなうには、液晶ライト
バルブを数個用いて各色に対応した画像をデイス
プレイして合成するが、この時、液晶ライトバル
ブはポジテイブモードでないと黒地にカラーのデ
イスプレイは困難なことになる。 As mentioned above, the liquid crystal light valve is a negative mode display device that displays a black background on a white background, and is characterized by the ability to partially erase the display. In order to create a positive mode display with a white background on a black background, it is necessary to first scan the entire surface with a laser beam in a storage mode to create a black background, and then record the white background again with a laser beam in a partial erase mode. However, with current laser beam scanning, it takes several seconds to display one screen, so this method of positive mode display is not practical. To create a multicolor display, several LCD light valves are used to display and synthesize images corresponding to each color, but at this time, it is difficult to display a color display on a black background unless the LCD light valves are in positive mode. It turns out.
この発明はかかる点において行なわれたもの
で、ポジテイブモードの熱書き込み液晶ライトバ
ルブを提供するものである。 The present invention has been made in this respect and provides a positive mode thermal writing liquid crystal light valve.
この発明によれば、レーザ光照射で発生する熱
でもつて液晶の相変化を生ぜしめてレーザ光走査
パターンを表示する液晶ライトバルブにおいて、
透明基盤に一様な熱発生用透明導電膜を形成した
ことを特徴とする液晶ライトバルブが得られる。 According to the present invention, in a liquid crystal light valve that displays a laser beam scanning pattern by causing a phase change of the liquid crystal using heat generated by laser beam irradiation,
A liquid crystal light valve characterized in that a uniform transparent conductive film for heat generation is formed on a transparent substrate is obtained.
次に図面を参照してこの発明による液晶ライト
バルブについて説明する。第３図はこの発明によ
る液晶ライトバルブを説明するための図である。
ガラス等の透明基盤１２上に透明導電膜１３、光
吸収膜１４、反射膜１５、液晶配向膜１６を形成
する。透明導電膜１３はIn2O3、InTi2O3、
Sb2O3、Ta2O3、PbF2等を蒸着、スパツターした
もので、光吸収膜はCdTe、Mg2Si等の化合物半
導体や色素を含む有機ポリマー材が用いられる。
反射膜１５はAlを膜厚500Å程度に蒸着し、液晶
配向膜１６はSiOやSiO2や膜厚数100Å位、異方
的に蒸着することで得られる。もう一つの透明基
盤１９上には同様に透明導電膜１８、液晶配向膜
１６を作成し、透明基盤１２と対向させて12μｍ
程度のスペーサをはさみ込み周囲をトールシール
で接着封止する。片面のガラス基盤にあけられた
注入口より液晶材１７としてスメクチツク液晶
（例えばｎ−Octyl Cyano biphenyl）を温めなが
ら低圧下で注入して、液晶ライトバルブが構成さ
れる。この発明は、透明導電膜１３に外部電源を
継ぎ、熱発生源として用いるものである。透明導
電膜１３の抵抗値は蒸着時の膜厚と蒸着後の酸化
処理によつて選ぶことができる。例えばIn2O3／
SnO2膜では比重1.4ｇ／cm3、比熱1.3J／ｇ・℃の
値をもち、面積５cm2に厚み1μｍをつけ、表面抵
抗値を10Ω／口とすると、電圧50V、印加時間10
ｍｓで温度は約30℃上昇する。スメクチツク液晶
では20℃温度が上昇すればスメクチツク相から液
体相に変化する。 Next, a liquid crystal light valve according to the present invention will be explained with reference to the drawings. FIG. 3 is a diagram for explaining the liquid crystal light valve according to the present invention.
A transparent conductive film 13, a light absorption film 14, a reflection film 15, and a liquid crystal alignment film 16 are formed on a transparent substrate 12 such as glass. The transparent conductive film 13 is made of In 2 O 3 , InTi 2 O 3 ,
Sb 2 O 3 , Ta 2 O 3 , PbF 2 , etc. are vapor-deposited and sputtered, and the light-absorbing film is made of compound semiconductors such as CdTe, Mg 2 Si, and organic polymer materials containing dyes.
The reflective film 15 is obtained by depositing Al to a thickness of about 500 Å, and the liquid crystal alignment film 16 is obtained by anisotropically depositing SiO or SiO 2 to a thickness of about 100 Å. A transparent conductive film 18 and a liquid crystal alignment film 16 were similarly created on another transparent substrate 19, and were made to face the transparent substrate 12 with a thickness of 12 μm.
Insert a spacer of about 100 mL and seal the surrounding area with Tall Seal. A liquid crystal light valve is constructed by injecting smectic liquid crystal (for example, n-Octyl Cyano biphenyl) as the liquid crystal material 17 under low pressure while heating it through an injection port made in one side of the glass substrate. In this invention, an external power source is connected to the transparent conductive film 13 and used as a heat generation source. The resistance value of the transparent conductive film 13 can be selected depending on the film thickness during vapor deposition and the oxidation treatment after vapor deposition. For example, In 2 O 3 /
The SnO 2 film has a specific gravity of 1.4 g/cm 3 and a specific heat of 1.3 J/g・℃, has an area of 5 cm 2 and a thickness of 1 μm, and has a surface resistance of 10 Ω/hole, a voltage of 50 V, and an application time of 10
The temperature rises by about 30°C in ms. In smectic liquid crystals, if the temperature increases by 20°C, the smectic phase changes to the liquid phase.
第４図は透明導電膜１３に電圧を印加したとき
の膜の温度上昇を示す図である。(a)に示すような
パルス状の電圧（50V）を印加した時に得られた
温度変化が(b)の波形である。ガラス基盤等への熱
損失があるために立ち上り、立ち下り共にある時
定数をもつ。10ｍｓのパルス幅で20℃以上の温度
上昇が得られ、パルス立ち下り後の減衰も10ｍｓ
以内に押さえることができる。したがつて、透明
導電膜に電圧を印加することによつて熱を発生
し、液晶ライトバルブの全液晶をスメクチツク相
から液体相に転移せしめ、急冷効果によるストレ
ージ状態を実現できる。この時、液晶ライトバル
ブの全面が黒地のデイスプレイとなり、次に第２
図の(B)領域における部分消去モードでレーザ光に
よる白地の線を描くことができる。すなわち、ポ
ジテイブモードのデイスプレイが実現される。 FIG. 4 is a diagram showing the temperature rise of the transparent conductive film 13 when a voltage is applied to the film. The waveform in (b) is the temperature change obtained when the pulsed voltage (50V) shown in (a) is applied. Due to heat loss to the glass substrate, etc., both rise and fall have a certain time constant. A temperature rise of 20℃ or more can be obtained with a pulse width of 10ms, and the attenuation after the pulse falls is also 10ms.
It can be held within. Therefore, by applying a voltage to the transparent conductive film, heat is generated to cause all the liquid crystals in the liquid crystal light valve to transition from the smectic phase to the liquid phase, thereby achieving a storage state due to the rapid cooling effect. At this time, the entire surface of the liquid crystal light valve becomes a black display, and then the second
In the partial erase mode in area (B) in the figure, a white line can be drawn using laser light. In other words, a positive mode display is realized.
透明導電膜１３に必要な膜厚は２つの制限を受
ける。１つは熱発生に必要な印加電圧が消去モー
ドに必要な消去電圧より低くなければならない。
導電膜に面と平行な方向に電圧を印加した時、電
圧分布は勾配をもつが、消去電圧より高い電圧が
加わつた部分では、ストレージ状態が不安定にな
るからである。したがつて、導電膜の抵抗値は低
い方が良く、膜厚が大きい程良い。もう一つは、
導電膜の光学的特性であつて、膜厚が大きくなる
程光学的吸収が増し、1μｍ以上の膜で黄色に色
付く。したがつて、膜厚は小さい方が良い。この
両者の条件は相反するもので、In2O3／SnO2膜で
は表面抵抗値が10Ω／口近傍で1μｍ厚み程度の
膜が最適条件と考えられる。 The thickness required for the transparent conductive film 13 is subject to two restrictions. First, the applied voltage required for heat generation must be lower than the erase voltage required for erase mode.
This is because when a voltage is applied to the conductive film in a direction parallel to the surface, the voltage distribution has a gradient, but the storage state becomes unstable in the portion where a voltage higher than the erase voltage is applied. Therefore, the lower the resistance value of the conductive film, the better, and the larger the film thickness. the other one is,
It is an optical characteristic of a conductive film, and the optical absorption increases as the film thickness increases, and a film with a thickness of 1 μm or more becomes yellow in color. Therefore, the smaller the film thickness, the better. These two conditions are contradictory, and it is considered that the optimal conditions for the In 2 O 3 /SnO 2 film are a film with a surface resistance value of 10 Ω/near the mouth and a thickness of about 1 μm.
透明導電膜１３を設ける液晶ライトバルブ中の
位置としては、透明導電膜１８を熱発生用膜とし
ても良い。しかし、上に記したように膜が厚くな
り吸収によつてデイスプレイに色がついてしまう
のは好ましいことではない。さらに熱書き込み液
晶ライトバルブでは液晶界面の温度上昇が重要で
あるので、レーザ記録側の反対側から暖めるのは
記録の履歴が残ることがあり望ましくない。ま
た、レーザ記録側で光吸収層１４から液晶１７の
間に設置することは、レーザ光で発生した熱を散
逸せしめ、記録特性を劣化させることになる。し
たがつて、ガラス基盤１２と光吸収層１４の間に
熱発生用導電膜１３を形成するのが、レーザ光の
吸収効果も小さいので最適である。また、熱発生
用透明導電膜１３に一定電流を流し、温度バイア
スを発生することも可能である。 Regarding the position in the liquid crystal light valve where the transparent conductive film 13 is provided, the transparent conductive film 18 may be used as a heat generating film. However, as mentioned above, it is not desirable that the film becomes thick and the display becomes colored due to absorption. Furthermore, since temperature rise at the liquid crystal interface is important in thermal writing liquid crystal light valves, it is not desirable to heat the liquid crystal from the side opposite to the laser recording side because recording history may remain. Moreover, if it is installed between the light absorption layer 14 and the liquid crystal 17 on the laser recording side, the heat generated by the laser beam will be dissipated, which will deteriorate the recording characteristics. Therefore, it is optimal to form the heat-generating conductive film 13 between the glass substrate 12 and the light absorption layer 14 because the laser light absorption effect is also small. It is also possible to generate a temperature bias by flowing a constant current through the heat-generating transparent conductive film 13.
以上、詳細に述べたように、この発明によれば
ポジテイブモードのレーザ光熱書き込み液晶ライ
トバルブを得られる。 As described above in detail, according to the present invention, a positive mode laser photothermal writing liquid crystal light valve can be obtained.
第１図は従来の液晶ライトバルブを示す図、第
２図は液晶の消去特性を示す図、第３図はこの発
明による液晶ライトバルブを示す図、第４図は膜
の温度上昇を示す図である。
図において、１はレーザ光、１２，１９はガラ
ス基盤、１４は光吸収膜、１５は反射膜、１７は
液晶材、１６は液晶配向膜、１３，１８は透明電
極、１１は投射光である。
Fig. 1 is a diagram showing a conventional liquid crystal light valve, Fig. 2 is a diagram showing erasing characteristics of liquid crystal, Fig. 3 is a diagram showing a liquid crystal light valve according to the present invention, and Fig. 4 is a diagram showing temperature rise of the film. It is. In the figure, 1 is a laser beam, 12 and 19 are glass substrates, 14 is a light absorption film, 15 is a reflection film, 17 is a liquid crystal material, 16 is a liquid crystal alignment film, 13 and 18 are transparent electrodes, and 11 is a projection light. .
Claims (1)
化を生じせしめてレーザ光走査パターンを表示す
る液晶ライトバルブにおいて、面内一様な熱発生
用透明導電膜と光吸収膜と反射膜と液晶配向膜と
をこの順番で片面に構成した第一の透明基板と、
透明導電膜と液晶配向膜とをこの順で片面に構成
した第２の透明基板とで液晶を挟んだことを特徴
とする液晶ライトバルブ。 ２ 熱発生用透明導電膜の表面抵抗値を約10Ω／
□とした特許請求の範囲第１項記載の液晶ライト
バルブ。 ３ 熱発生用透明導電膜が透明基盤と光吸収膜と
の間に形成された特許請求の範囲第１項記載の液
晶ライトバルブ。[Scope of Claims] 1. In a liquid crystal light valve that displays a laser beam scanning pattern by causing a phase change in the liquid crystal due to heat generated by laser beam irradiation, a transparent conductive film for heat generation and a light absorption film that are uniform in the surface are provided. a first transparent substrate comprising a reflective film and a liquid crystal alignment film in this order on one side;
A liquid crystal light valve characterized in that a liquid crystal is sandwiched between a second transparent substrate having a transparent conductive film and a liquid crystal alignment film formed on one side in this order. 2 The surface resistance value of the transparent conductive film for heat generation is approximately 10Ω/
The liquid crystal light valve according to claim 1, which is defined as □. 3. The liquid crystal light valve according to claim 1, wherein the heat-generating transparent conductive film is formed between the transparent substrate and the light absorption film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5142581A JPS57165820A (en) | 1981-04-06 | 1981-04-06 | Liquid-crystal light valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5142581A JPS57165820A (en) | 1981-04-06 | 1981-04-06 | Liquid-crystal light valve |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57165820A JPS57165820A (en) | 1982-10-13 |
| JPH0254529B2 true JPH0254529B2 (en) | 1990-11-21 |
Family
ID=12886565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5142581A Granted JPS57165820A (en) | 1981-04-06 | 1981-04-06 | Liquid-crystal light valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57165820A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49125049A (en) * | 1973-04-02 | 1974-11-29 | ||
| JPS5048944A (en) * | 1973-08-31 | 1975-05-01 | ||
| JPS53137165A (en) * | 1977-05-02 | 1978-11-30 | Hughes Aircraft Co | Liquid crystal light valve |
| JPS5432341A (en) * | 1977-08-17 | 1979-03-09 | Toray Industries | Liquid crystal indicator |
| JPS5458042A (en) * | 1977-09-23 | 1979-05-10 | Thomson Csf | Monochromatic image analyzing recorder |
| JPS57104115A (en) * | 1980-12-22 | 1982-06-29 | Nec Corp | Liquid crystal light valve |
| JPS57120235A (en) * | 1981-12-04 | 1982-10-30 | Yokogawa Hewlett Packard Ltd | Storage device |
-
1981
- 1981-04-06 JP JP5142581A patent/JPS57165820A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49125049A (en) * | 1973-04-02 | 1974-11-29 | ||
| JPS5048944A (en) * | 1973-08-31 | 1975-05-01 | ||
| JPS53137165A (en) * | 1977-05-02 | 1978-11-30 | Hughes Aircraft Co | Liquid crystal light valve |
| JPS5432341A (en) * | 1977-08-17 | 1979-03-09 | Toray Industries | Liquid crystal indicator |
| JPS5458042A (en) * | 1977-09-23 | 1979-05-10 | Thomson Csf | Monochromatic image analyzing recorder |
| JPS57104115A (en) * | 1980-12-22 | 1982-06-29 | Nec Corp | Liquid crystal light valve |
| JPS57120235A (en) * | 1981-12-04 | 1982-10-30 | Yokogawa Hewlett Packard Ltd | Storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57165820A (en) | 1982-10-13 |
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