JPH0251254B2 - - Google Patents
Info
- Publication number
- JPH0251254B2 JPH0251254B2 JP60278562A JP27856285A JPH0251254B2 JP H0251254 B2 JPH0251254 B2 JP H0251254B2 JP 60278562 A JP60278562 A JP 60278562A JP 27856285 A JP27856285 A JP 27856285A JP H0251254 B2 JPH0251254 B2 JP H0251254B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- contact
- wafer
- semiconductor wafer
- tank body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000000873 masking effect Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 28
- 239000007788 liquid Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ウエハ表面に配線電極やバンプ
等の電極を形成する半導体ウエハのメツキ装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor wafer plating apparatus for forming electrodes such as wiring electrodes and bumps on the surface of a semiconductor wafer.
半導体ウエハにメツキ電極を形成するには一般
に、第３図の如くウエハ１に導電性膜２を設けそ
の後必要部分以外をレジスト膜３でマスキング
し、噴流等で電気メツキを施している。その際、
ウエハとメツキ電極とのコンタクトのとり方とし
ては、メツキ槽本体の開口端にカソード電極とな
る針状のコンタクト６を設けてこのコンタクト６
を支持部としてその上に上記ウエハを圧下させて
上記レジスト膜３を突き破つて導電性膜２と接触
させて導通をとつている。
Generally, in order to form a plating electrode on a semiconductor wafer, a conductive film 2 is provided on the wafer 1 as shown in FIG. 3, and then the non-required portions are masked with a resist film 3, and electroplating is performed using a jet or the like. that time,
In order to make contact between the wafer and the plating electrode, a needle-shaped contact 6 that serves as a cathode electrode is provided at the open end of the plating tank body, and this contact 6 is
The wafer is pressed down onto the supporting portion, and the resist film 3 is pierced and brought into contact with the conductive film 2 to establish electrical conduction.
なお、上記コンタクト６はメツキ槽本体の開口
端の円周上に適当な間隔をもつて数個所設けられ
ている。また、上記メツキ槽本体７内部に上記ウ
エハ下面と対面するように網状のアノード電極が
配設されている。矢印はメツキ液の流れを示しメ
ツキ後はウエハ１とメツキ槽本体との間の間隔か
ら流出してメツキ浴槽へ戻る。 The contacts 6 are provided at several locations at appropriate intervals on the circumference of the open end of the plating tank body. Further, a net-shaped anode electrode is disposed inside the plating tank body 7 so as to face the lower surface of the wafer. The arrows indicate the flow of the plating liquid, and after plating, it flows out from the gap between the wafer 1 and the plating bath body and returns to the plating bath.
上記メツキ装置を用いて、半導体ウエハ１の表
面にバンプ又はメツキ配線を形成する場合には下
記の如くの欠点があつた。
When forming bumps or plating wiring on the surface of the semiconductor wafer 1 using the above-mentioned plating apparatus, there were the following drawbacks.
つまり、
(1) レジスト膜３を完全に突き破れずメツキのた
めの良好な接触導通が得られず、正常なメツキ
処理が行えず、柱状バンプ４等を形成するため
に厚いレジスト膜を使用したときにはコンタク
ト不良が多く発生する。 In other words, (1) the resist film 3 could not be completely penetrated, good contact continuity for plating could not be obtained, and normal plating could not be performed, and a thick resist film was used to form the columnar bumps 4, etc. Sometimes, many contact failures occur.
(2) コンタクト部６にメツキ析出が集中しやすく
コンタクトの劣化が著しい。(2) Plating deposits tend to concentrate on the contact portion 6, resulting in significant contact deterioration.
などの理由のため従来のメツキ装置では半導体ウ
エハ表面に所望のメツキ処理が施せないという欠
点を有していた。For these reasons, conventional plating apparatuses have the disadvantage of not being able to perform desired plating on the surface of semiconductor wafers.
本発明は叙上の問題点を解消するメツキ装置と
して、半導体ウエハの被メツキ表面にメツキ析出
が均一になされその際に電気メツキのコンタクト
部へのメツキ析出を防止してコンタクトの劣化を
防ぐ半導体ウエハのメツキ装置を提供することを
目的とする。
The present invention is a plating device that solves the above-mentioned problems.The present invention is a plating device that uniformly deposits plating on the surface of a semiconductor wafer to be plated, and prevents the deterioration of the contacts by preventing the plating from being deposited on the contacts of electroplating. The purpose is to provide a wafer plating device.
しかして、本発明のメツキ装置は、メツキ槽本
体の開口端に設けられてウエハを支持しかつカソ
ード電極となるコンタクトの周囲をとり囲む絶縁
体カバーを備えており、前記絶縁体カバーは前記
ウエハ上に設けられたメツキ用マスキング部材と
接触し、前記コンタクトは前記マスキング部材の
ない部分で前記ウエハと直接接触させるようにし
ている。 Therefore, the plating apparatus of the present invention includes an insulator cover that is provided at the open end of the plating tank body and that supports the wafer and surrounds the contact that serves as the cathode electrode, and the insulator cover is attached to the wafer. The contact is brought into contact with a plating masking member provided above, and the contact is brought into direct contact with the wafer at a portion where the masking member is not present.
なお、半導体ウエハにコンタクトを直接接触さ
せるには、通常半導体ウエハ製造工程で用いられ
ているレジストによるマスキング手法を用いれば
ウエハ表面上の所望の位置にレジスト膜のコンタ
クトホールを設けることができる。 Note that in order to bring the contacts into direct contact with the semiconductor wafer, contact holes in the resist film can be provided at desired positions on the wafer surface by using a masking method using a resist that is normally used in the semiconductor wafer manufacturing process.
第１図において、ウエハ１は導電性膜２、例え
ばNi、Cu上にメツキが必要な部分とコンタクト
ホール５以外をレジスト膜３で通常用いられるホ
トレジスト手法でマスキングされている。一方、
メツキ槽本体７はウエハ１のコンタクトホール５
に対応する部位にコンタクト６がカソード電極と
なるように結線されている。このコンタクト６は
ステンレス、Pt等のメツキ液に侵されにくい金
属が適している。
In FIG. 1, a wafer 1 has a conductive film 2, such as Ni or Cu, which is masked with a resist film 3 using a commonly used photoresist method except for the portions requiring plating and the contact holes 5. on the other hand,
The plating tank body 7 is the contact hole 5 of the wafer 1.
A contact 6 is connected to a portion corresponding to the cathode electrode. This contact 6 is suitably made of metal such as stainless steel or Pt that is not easily corroded by plating liquid.
コンタクト６の周囲にはこれを覆うように耐メ
ツキ液性でかつ柔軟性のある絶縁体カバー９が上
記メツキ槽本体７側に設けられている。 Around the contacts 6, an insulating cover 9 which is resistant to plating liquid and flexible is provided on the side of the plating tank body 7 so as to cover the contacts 6.
上記ウエハ１をメツキ槽本体側のコンタクト６
と位置合わせしてコンタクト６側に圧下して前記
アノード、カソード電極間に電圧を印加して電流
を流す。メツキ液は矢印１０の如くメツキ槽本体
下部から吹き上げられて半導体ウエハ１の被メツ
キ表面にメツキ後に例えばウエハ１とメツキ槽本
体７との間の隙間から外側へ流出してメツキ浴槽
へ戻る。このとき、柔軟性ある絶縁体カバー９
は、ウエハ１の圧下により、レジスト３と密着し
ておりメツキ液の侵入を防ぐためコンタクト６は
メツキされることがない。なお、第１図に示す実
施例では噴流式メツキ装置の場合で説明したが、
デイツプ方式のメツキ装置など他の装置へも応用
可能なことはいうまでもない。 Contact 6 on the side of the plating tank body for the above wafer 1
The electrodes are aligned and pushed down to the contact 6 side, and a voltage is applied between the anode and cathode electrodes to flow a current. The plating liquid is blown up from the lower part of the plating bath body as shown by arrow 10, and after plating the surface of the semiconductor wafer 1 to be plated, flows out from the gap between the wafer 1 and the plating bath body 7, for example, and returns to the plating bath. At this time, the flexible insulator cover 9
The contact 6 is not plated because it is in close contact with the resist 3 due to the pressing down of the wafer 1 and prevents the plating liquid from entering. In addition, although the embodiment shown in FIG. 1 was explained in the case of a jet plating device,
Needless to say, the present invention can also be applied to other devices such as dip-type plating devices.
以上のように本発明装置によればコンタクトと
半導体ウエハとの間で良好な電気的接触が得ら
れ、併せてコンタクト部分にメツキが析出される
ことによるコンタクト劣化、メツキ電流のバラツ
キを抑えながら半導体ウエハ表面に充分なメツキ
析出層を形成させることが出来るという優れた効
果がある。
As described above, according to the device of the present invention, good electrical contact can be obtained between the contact and the semiconductor wafer, and at the same time, contact deterioration due to plating deposited on the contact portion and variation in the plating current can be suppressed while the semiconductor This has the excellent effect of forming a sufficient plating deposit layer on the wafer surface.
第１図は本発明の半導体ウエハのメツキ装置の
一実施例を示す縦断面図、第２図は第１図図示装
置の要部斜視図、第３図は従来メツキ装置の縦断
面図である。
１……半導体ウエハ、２……導電性膜、３……
レジスト膜、４……電気メツキで形成されたバン
プ、５……コンタクトホール、６……コンタクト
（カソード電極）、７……メツキ層本体、８……網
状電極（アノード電極）、９……絶縁体カバー、
１０……メツキ液の流れ。
FIG. 1 is a longitudinal cross-sectional view showing an embodiment of the semiconductor wafer plating apparatus of the present invention, FIG. 2 is a perspective view of the main part of the apparatus shown in FIG. 1, and FIG. 3 is a longitudinal cross-sectional view of a conventional plating apparatus. . 1... Semiconductor wafer, 2... Conductive film, 3...
Resist film, 4... Bump formed by electroplating, 5... Contact hole, 6... Contact (cathode electrode), 7... Plating layer body, 8... Network electrode (anode electrode), 9... Insulation body cover,
10...Flow of Metsuki liquid.
Claims (1)
体の開口端に半導体ウエハの接触部となり且つカ
ソード電極ともなるコンタクトと該コンタクトの
一部が突出するようにその周囲を取り囲む柔軟性
ある絶縁体カバーを配設し、前記絶縁体カバーは
前記半導体ウエハ表面に設けられたメツキ用マス
キング部材と接触し、前記コンタクトは前記マス
キング部材のない部分で前記半導体ウエハと直接
接触させるようにしたことを特徴とする半導体ウ
エハのメツキ装置。1. A contact that serves as a contact part for a semiconductor wafer and also serves as a cathode electrode at the open end of the plating tank body in which a net-shaped anode electrode part is arranged, and a flexible insulating cover that surrounds the contact so that a part of the contact protrudes. The insulator cover is in contact with a plating masking member provided on the surface of the semiconductor wafer, and the contact is in direct contact with the semiconductor wafer in a portion where the masking member is not provided. Semiconductor wafer plating equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60278562A JPS62136859A (en) | 1985-12-10 | 1985-12-10 | Plating apparatus for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60278562A JPS62136859A (en) | 1985-12-10 | 1985-12-10 | Plating apparatus for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136859A JPS62136859A (en) | 1987-06-19 |
| JPH0251254B2 true JPH0251254B2 (en) | 1990-11-06 |
Family
ID=17598991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60278562A Granted JPS62136859A (en) | 1985-12-10 | 1985-12-10 | Plating apparatus for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9529270B2 (en) | 2013-08-13 | 2016-12-27 | Canon Kabushiki Kaisha | Lithography apparatus, and method of manufacturing article |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2668243B2 (en) * | 1988-07-01 | 1997-10-27 | 富士通株式会社 | Plating method and plating apparatus |
-
1985
- 1985-12-10 JP JP60278562A patent/JPS62136859A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9529270B2 (en) | 2013-08-13 | 2016-12-27 | Canon Kabushiki Kaisha | Lithography apparatus, and method of manufacturing article |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62136859A (en) | 1987-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |