JPH0251221A - Apparatus for formation of semiconductor thin film - Google Patents

Abstract

PURPOSE:To project a small pattern by maintaining a constant relative position of a substrate in an organic metal molecular beam epitaxie(MOMBE) apparatus to an optical system for irradiating it with a light. CONSTITUTION:A MOMBE apparatus body 1, a laser 2, and an optical element 3 are fixed on a vibration-free base 4 so that the positional relationship of them is not deviated due to a vibration or the like. A light incidence window 5 is opened oppositely to a substrate 8 in a MOMBE apparatus, and a semiconductor thin film can be irradiated with a laser light during the growth of the film. Since such a structure is provided, a mirror, a lens, a mask, etc., are associated on the base, and a small pattern on the substrate can be radiated in the apparatus, and the mirror, the lens are moved on the base to scan a small laser beam focused by the lens on the substrate. Thus, the semiconductor thin film having a pattern of micron order which is impossible by a prior art can be grown.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention partially provides 17% growth by irradiating light onto a substrate to promote a thin film growth reaction when growing a semiconductor thin film.
The present invention relates to a semiconductor thin film forming apparatus for forming a semiconductor thin film that is grown only partially or only partially.

(Prior Art) As semiconductor devices, including those for optoelectronics, become more sophisticated and functional, their manufacturing processes are becoming increasingly complex. In order to simplify the process, not only device structures but also semiconductor thin film manufacturing processes have been proposed.

For example, Abride Physics Letters (^pplie
dPhysics Letters) Vol. 52, No. 13 (1988), p. 1065, organic total refractive molecular beam epitaxy (hereinafter M
A technique has been developed in which a semiconductor IDQ is selectively formed on a portion of a semiconductor substrate by partially irradiating excimer laser light onto the semiconductor substrate within a device (referred to as OMBE). In this semiconductor thin film forming method, a desired semiconductor y
In order to obtain a film pattern, it is important to control the laser beam that irradiates the semiconductor substrate.

(Problem to be Solved by the Invention) However, when a substrate in a MOMBE device is irradiated with laser light, the MOMBE device and the optical system including the laser are separated and independent. Therefore, due to vibrations generated in the MOMBE device and vibrations from other devices, the relative positions of the MOMBE decoration and the optical system are not constant and shift occurs, making it impossible to project a minute beam or minute pattern.

The present invention was proposed in order to improve the above-mentioned drawbacks, and its purpose is to provide an apparatus for selectively growing a semiconductor thin film while irradiating a semiconductor substrate with light, in order to irradiate the same with a substrate in a MOMBE apparatus. An object of the present invention is to provide a semiconductor thin film forming apparatus that enables projection of minute patterns by keeping the relative position of the semiconductor thin film with respect to the optical system constant.

(Means for Solving the Problems) In order to achieve the above object, the present invention provides a metal organic molecular beam epitaxy (MOMBE) apparatus and a laser optical system for irradiating a substrate in the metal organic molecular beam epitaxy apparatus. The gist of the invention is a semiconductor thin film forming apparatus, characterized in that the organometallic molecular beam epitaxy apparatus and the laser optical system are installed on a vibration isolation table and are integrated. It is something.

(Function) The present invention provides MOMB
The main feature is that the E device and the optical system including the laser are integrated, and in particular, it is installed on a seismic isolation table. Therefore, it is possible to form a semiconductor thin film having a fine shape.

(Example) Next, an example of the present invention will be described. Note that the embodiments are merely illustrative, and it goes without saying that various changes and improvements can be made without departing from the spirit of the present invention.

FIG. 1 shows an overview of an embodiment of the present invention. In the figure, l is the main body of the MOMBE device, 2 is a laser source, 3 is an optical element such as a mirror, lens, or diffraction grating, 4 is an anti-seismic table, 5 is a light entrance window, 6 is a raw material supply line, and 7 is a vacuum exhaust. system, 8
is the substrate. MOMBE device main body l and laser 2
．． The optical elements 3 are fixed on a vibration isolation table 4 so that their relative positions do not shift due to vibrations or the like. The light entrance window 5 is open facing the substrate 8 in the MOMBE apparatus, and enables laser light irradiation during the growth of a semiconductor thin film. The vacuum evacuation system 7 uses a diffusion pump to
Vibrations generated in the OMBB device can be eliminated. By using flexible parts such as the raw material supply line 6 and the like that are connected to the outside of the vibration isolation table, it is possible to prevent vibrations generated outside from being transmitted to the vibration isolation table.

For example, when the substrate 8 is irradiated with a finely focused laser beam, the diameter at the narrowest part (focal point) of the beam focused by a lens is proportional to the focal length of the lens. Therefore, it is preferable to use a lens with a focal length as short as possible, and it is desirable to place the light entrance window 5 and the substrate 8 as close as possible. Therefore, MOM in the present invention
In the BE device, a light irradiation window 5 is installed in a cylindrical chamber, and the distance between the light irradiation window 5 and the substrate 8 is 10
It is below cn+.

With this structure, by combining mirrors, lenses, masks, etc. on the vibration isolation table, it is possible to irradiate a minute pattern onto the substrate inside the MOMBB device, and it is also possible to combine mirrors, lenses, masks, etc. It is also possible to scan the substrate with a minute laser beam focused by a lens by moving it on a vibration isolation table. Furthermore, by utilizing the coherence of laser light and using various mirrors and diffraction gratings, it is possible to project a diffraction pattern or an interference pattern onto a substrate. Therefore, it is possible to grow a semiconductor thin film having a pattern on the micron order, which was impossible with conventional techniques.

FIG. 2 shows r, a A s Fi! grown using the semiconductor thin film forming apparatus of the present invention. A cross-sectional view of the membrane is shown. An argon laser (wavelength 514.5 nm) is used as a light source, and this
Growth was performed by partially irradiating the substrate with an X-fum mirror to form an interference pattern. It can be seen from the graph in FIG. 2 that the obtained thin film has irregularities with a pitch of about 2 μm and a height of 800 nm.

(Effects of the Invention) As described above, it is possible to form a semiconductor thin film having a fine shape by integrating the MOMBE device and the optical system, for example, on a vibration isolation table. Therefore, DFB or DBF that requires collation? It is useful not only for manufacturing semiconductor components for optoelectronics such as laser manufacturing, but also for forming patterned GaAs thin films and InP thin films on silicon.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a semiconductor iW film grown using the semiconductor thin film forming apparatus of the present invention. ■・・MOMBEvt71 main body 2・・・・・Laser source 3・・・Optical elements such as mirrors and lenses 4・・・Seismic isolation table 5・・・Light entrance window 6・・・・For supplying raw materials Line 7... Vacuum exhaust system 8... Board (3, +m)

Claims (1)

[Claims] A semiconductor thin film forming apparatus comprising a metal organic molecular beam epitaxy (MOMBE) apparatus and a laser optical system for irradiating a substrate in the metal organic molecular beam epitaxy apparatus, the apparatus comprising: the metal organic molecular beam epitaxy apparatus and the laser optical system; A semiconductor thin film forming apparatus characterized in that a system is installed on an earthquake isolation table and integrated.