JPH0250445A - ワイヤーボンディング方法 - Google Patents

ワイヤーボンディング方法

Info

Publication number
JPH0250445A
JPH0250445A JP63201195A JP20119588A JPH0250445A JP H0250445 A JPH0250445 A JP H0250445A JP 63201195 A JP63201195 A JP 63201195A JP 20119588 A JP20119588 A JP 20119588A JP H0250445 A JPH0250445 A JP H0250445A
Authority
JP
Japan
Prior art keywords
wire
ball
bonding
discharge
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63201195A
Other languages
English (en)
Inventor
Tsutomu Aoki
勉 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63201195A priority Critical patent/JPH0250445A/ja
Publication of JPH0250445A publication Critical patent/JPH0250445A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は金属ワイヤーのワイヤーボンディング方法に関
し、特にＣｕワイヤーのワイヤーボンディング方法に関
する。
〔従来の技術〕
従来、この種のワイヤーボンディング方法は第６図に示
すように、スパークロッド３により、キャピラリ４に挿
通したＡｕワイヤー１１の先端にボール１１ａを形成し
た後、該ボール１１ａを半導体チップ１２に圧着し、次
にリードフレーム１３にＡｕワイヤー１１を結合し、そ
の後Ａｕワイヤー１１を切断し、再びスパークロッド３
によりＡｕワイヤー１１の先端にボールＩｌａを形成し
、ワイヤーボンディングを行っていた。
〔発明が解決しようとする課題〕
上述した従来のワイヤーボンディング方法では一般にＡ
ｕワイヤーを用いているが、φ５０μ以上のＣｕワイヤ
ーボンディングを実施しようとしたときは、チップ側の
ボンディングからリードへのボンディングをする際、す
なわちステッチボンディングの際に、Ｃｕワイヤー自身
の硬さのため、通常のＡｕワイヤーに比べ、ＵＳパワー
及び荷重を強くかけないと、切断できずにテール残りが
生じてしまう、従って、相当のパワー及び荷重でステッ
チボンディングするが、切断されたワイヤーの先端が変
形しているため、放電させても、真円でなく、楕円に近
いボールが成形されるという欠点がある。又、Ｃｕワイ
ヤーを成形したボールは高温の熱源上にある時間が長い
と、表面に酸化膜が形成され、チップとの接合状態やシ
リコンへのダメージにも影響するという欠点が有る。
本発明の目的は前記課題を解決したワイヤーボンディン
グ方法を提供することにある。
〔発明の従来技術に対する相違点〕
上述した従来のワイヤーボンディング方法に対し、本発
明はボンディング開始時に先のボール成形時よりも高い
放￥ｂｇ圧で再度放電を行うという相違点を有する。
〔課題を解決するための手段〕
前記目的を達成するため、本発明は半導体チップとリー
ドフレームとを金属ワイヤーにより結線するワイヤーボ
ンディング方法において、金属ワイヤーにボールを成形
した後、次にボンディングヘッドがボンディング動作に
入る寸前に、先のボール成形電圧よりも高い電圧でワイ
ヤー先端のボールに放電してから、ワイヤーリングする
ものである。
〔実施例〕
以下、本発明について図面を参照して説明する。
（実施例１） 第１図（ａ）〜（ｄ）は本発明のワイヤーボンディング
を工程順に示す図、第２図は本発明装置に使用する放電
部のブロック図、第３図は本発明装置のボンディングヘ
ッドのキャピラリ軌跡と放電タイミングと放電電圧との
関係を示す図、第４図は本発明装置の１ワイヤーのボン
ディングフローチャート図である。第１図（ａ）〜（ｄ
）に示すように太線Ｃｕワイヤー１をボンディングする
際に、まず、キャピラリ４に挿通したワイヤー１の先端
にすでに成形されたボール２に対してスパークロッド３
と成形ボール２間との距１１１Ｌ１に基づいて放電電圧
Ｖ２より高い電圧■１で放電させる。ワイヤー１の先端
とスパークロッド３との距離は、Ｌ２よりＬｌの方が長
いため、放電電圧Ｖ１はｖ２より高く設定する。放電電
圧Ｖｌ、Ｖ２は第２図に示すように可変抵抗ＶＲ，，Ｖ
Ｒ２により調整し高圧発生部１４より発生させる。１５
は出力電圧の切替制御部であり、切替制御部１５により
接点１５ａを切替える。放電電圧Ｖ１での放電後、キャ
ピラリ４がチップ５とリード６にワイヤーリングした後
、太線Ｃｕワイヤーｌの先端は第１図（ｂ）　、　（ｃ
）のように形状が悪く、放電電圧Ｖ２で放電しても同図
（ｄ）のように真円のボールに成形できない場合がある
。そこで、本発明は次のワイヤーリング寸前に（ａ）の
ように距１１ｆＬ１に比例した放電電圧■１で放電する
ことにより、真円のボールとし、ボンディング状態を良
好に保つのである。すなわち、本発明は金属ワイヤーに
ボールを成形した後、次にボンディングヘッドがボンデ
ィング動作に入る寸前に、先のボール成形電圧よりも高
い電圧でワイヤー先端のボールに放電してからワイヤー
リングすることを特徴とするものである。
（実施例２） 第５図（ａ）〜（ｄ）は本発明の実施例２を工程順に示
す図である。Ｃｕワイヤー７の成形ボール２はヒータ１
０を備えたヒータブロック８の熱により還元ガスを流し
ていても製品交換等の理由により長時間放置された場合
には、表面に酸化膜９が形成されやすくなる。酸化膜９
は、成形ボール２の硬度を硬くする原因、あるいは、ボ
ンディング時のワイヤー不着の原因となる。そこで、第
５図（ｂ）に示すように、放電電圧■１により成形ボー
ル表面の酸化膜９を破壊した後、ワイヤーボンディング
する０本発明はＣｕワイヤー以外の一般のＡｕワイヤー
のワイヤー不着対策としても有効である。
〔発明の効果〕
以上説明したように本発明は、ワイヤーリングの寸前に
ボール成形時より高い放電電圧で放電することにより、
Ｃｕワイヤーでのワイヤーボンディングを安定させたり
、Ａｕワイヤーでの不着対策に適用でき、ボンディング
品質を向上させることができる効果がある。
【図面の簡単な説明】
第１図（ａ）〜（ｄ）は本発明の実施例１を工程順に示
す図、第２図は本発明装置の放電部を示すブロック図、
第３図は本発明におけるキャピラリ軌跡放電タイミング
、放電電圧の関係を示す図、第４図は本発明装置の１ワ
イヤーのボンディングフローチャート図、第５図（ａ）
〜（ｄ）は本発明の実施例２を工程順に示す図、第６図
は従来のワイヤーボンディング方法を示す図である。 １・・・太線Ｃｕワイヤー　２・・・成形ボール３・・
・スパークロッド　　４・・・キャピラリ５・・・チッ
プ　　　　　　６・・・リード７・・・Ｃｕワイヤー　
　　８・・・ヒータブロック９・・・酸化膜　　　　　
　１０・・・ヒータＴＡＲＴ ＮＤ

Claims (1)

    【特許請求の範囲】
  1. （１）半導体チップとリードフレームとを金属ワイヤー
    により結線するワイヤーボンディング方法において、金
    属ワイヤーにボールを成形した後、次にボンディングヘ
    ッドがボンディング動作に入る寸前に、先のボール成形
    電圧よりも高い電圧でワイヤー先端のボールに放電して
    から、ワイヤーリングすることを特徴とするワイヤーボ
    ンディング方法。
JP63201195A 1988-08-12 1988-08-12 ワイヤーボンディング方法 Pending JPH0250445A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63201195A JPH0250445A (ja) 1988-08-12 1988-08-12 ワイヤーボンディング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63201195A JPH0250445A (ja) 1988-08-12 1988-08-12 ワイヤーボンディング方法

Publications (1)

Publication Number Publication Date
JPH0250445A true JPH0250445A (ja) 1990-02-20

Family

ID=16436920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63201195A Pending JPH0250445A (ja) 1988-08-12 1988-08-12 ワイヤーボンディング方法

Country Status (1)

Country Link
JP (1) JPH0250445A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007063935A (ja) * 2005-09-02 2007-03-15 Kojimagumi:Kk 浚渫装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007063935A (ja) * 2005-09-02 2007-03-15 Kojimagumi:Kk 浚渫装置

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