JPH024962A - Evaporator for ion plating - Google Patents

Abstract

PURPOSE:To carry out uniform vapor deposition onto a band-shaped material in the width direction by disposing evaporation sources and cylindrical focusing coils equipped with the upper and lower openings, respectively, in a specific manner in an ion plating apparatus by an HCD method by using hollow cathode. CONSTITUTION:Crucibles 1, 1' in which evaporation sources 2, 2' are placed are disposed in bottom openings 4a, 4'a of cylindrical focusing coils 4, 4' having the upper and lower openings. Further, the diameters of the upper and lower openings are regulated so that the diameters of the upper openings are larger than the diameters of the lower openings in respective coils 4, 4' and respective barrels of the coils 4, 4' between the upper and lower openings are constituted so that they are tilted, and upper openings 4b, 4'b are disposed so that they are placed side by side adjacently each other in the width direction of a steel sheet 5 and are allowed to face the surface of the steel sheet 5, that is, the openings 4b, 4'b are disposed in parallel in a direction practically orthogonal to the direction of advance of the steel sheet 5 in the close vicinity of the steel sheet 5 and, on the other hand, the openings 4a, 4'a are displaced from the positions of the openings 4b, 4'b, respectively. By this method, a vapor current evaporated from the crucible 1 or 1' is allowed to reach the steel-sheet surface via the openings 4a, 4b or the openings 4'a, 4'b, by which simultaneous vapor deposition over the sheet-width direction can be attained.

Description

[Detailed Description of the Invention] (Industrial Application Field) This invention relates to an ion plating apparatus, particularly a so-called H CD (Hollow Cathode Dis).
The present invention relates to an ion plating evaporator that enables the formation of a deposited film with particularly excellent uniformity and adhesion when performing ion plating using the charge method.

(Prior art) The ion plating method using the HCD method has an extremely high ionization rate, so it cannot be used with ordinary BB (electron beam).
The quality of the deposited film is better than that of ion plating.
In addition, the HCD method has problems with adhesion to the substrate, and even if conditions such as reaction gas flow rate, degree of vacuum, bias voltage, substrate temperature, and substrate pretreatment change slightly, it can be easily and smoothly adapted. It is also known that there are great advantages to being seen.

In other words, regarding ion plating using the HCD method, Metal Surface Technology 35 (1) P, 16-24 (1
984), Powder and Powder Metallurgy 32 (1985) p.
, 55-60.

(Problems to be Solved by the Invention) Compared to the EB method, the HCD method performs vapor deposition under a lower voltage and larger current, and therefore it is difficult to perform operations such as swinging and bending the beam. Therefore, in order to deposit a uniform coating in the width direction of a strip such as a steel plate, it is necessary to arrange a plurality of evaporation sources in the width direction of the plate.

However, accurately arranging multiple evaporation sources side by side in the width direction of the steel plate has many restrictions on equipment such as evaporation crucibles and focusing coils, and even if it is possible to arrange evaporation sources side by side, the distance between the evaporation crucibles It was extremely difficult to achieve uniform vapor deposition in the width direction of the steel plate because of the large amount of evaporation.

If the deposition is uneven in the width direction of the steel plate, uneven heat and elastic distortion will occur across the width of the steel plate, leading to deformation of the steel plate.
This will significantly reduce the commercial value of the vapor-deposited product.

Incidentally, in JP-A-62-1820, JP-A-62-1821, and JP-A-62-1821, nitrides (e.g., TiN It has been pointed out that when manufacturing unidirectional silicon steel sheets with ultra-low iron loss by forming a tensile coating of carbides and other materials, slight coating unevenness on the surface of the steel sheet does not have a negative effect on the magnetic properties.

Therefore, it is an object of the present invention to provide an ion plating evaporator that solves the above-mentioned problems and is useful for forming a film uniformly in the width direction of a strip.

(Means for Solving the Problems) The present invention provides a strip-like structure in a vacuum chamber in which a plurality of crucibles containing evaporation sources, a plurality of hollow cathodes for plasma generation corresponding to the crucibles, and a reaction gas introduction tube are arranged. □In an HCD method ion plating device that introduces a material and performs vapor deposition, a cylindrical focusing coil with openings at the top and bottom that surrounds the crucible and extends to the vicinity of the strip material is installed in each crucible. This is an ion plating evaporation device in which the upper openings of the coils are arranged in parallel and adjacent to each other in a direction substantially perpendicular to the traveling direction of the strip.

Now, FIG. 1 schematically shows an evaporation apparatus suitable for continuous ion plating according to the present invention.

The same figure (a) shows the side cross section near the evaporation source, and the same figure (b) shows the side cross section near the evaporation source.
) shows the arrangement of the focusing coil and crucible when looking at the evaporator from the upper steel plate side.

1 in the figure. Bi is the crucible, 2.2' is the evaporation source (e.g. Ti)
, 3. 3' is a bent type HC bent at 90 degrees in this example.
The D gun 4.4' is a focusing coil, and the vapor flow from the evaporation sources 2, 2' is deposited on the surface of the steel plate while being guided inside the focusing coil 4.4'.

Further, 5 is a steel plate, and 6 and 6' are reaction gas introduction tubes such as N2 gas.

The focusing coil 4.4' is a cylindrical body with an open top and bottom, and a crucible 1. On the other hand, the upper openings 4b and 4'b are arranged adjacent to each other in the width direction of the steel plate 5, and the upper opening diameter is larger than the lower opening diameter so that they face the surface of the steel plate 5. Also, the body between the upper and lower openings is tilted.

That is, in the illustrated example, as shown in FIG.
In the vicinity of the opening 4b, 4'b above the focusing coil
are arranged in parallel in a direction substantially perpendicularly crossing the traveling direction of the steel plate 5 shown by the arrow in the figure, while the openings 4a, 4'a below each focusing coil are displaced from the positions of the openings 4b, 4'b, For example, in the figure, with the upper opening 4b or 4'b as a reference, the opening 4a is displaced to the left, the opening 4'a is displaced to the right, and the opening 4a or 4'a below each focusing coil is displaced.
A crucible 1 or 1' is placed inside. The focusing coil in the illustrated example is a cylinder with a bent body, and therefore the openings 4b, 4'b are circular; however, these openings 4b
, 4'b are juxtaposed such that the center of the circle indicated by each opening 4b4'b is on a straight line that crosses the advancing direction of the steel plate 5 at right angles, and it is desirable that they are in contact with each other.

As is clear from the figure, the vapor flow evaporated from the separate crucibles 1 or 1' reaches the surface of the steel plate via the focusing coil 4 or 4' as shown in the openings 4a→4b or 4'a→4'b. , it becomes possible to perform simultaneous vapor deposition across the width of the steel plate on the surface of the steel plate. In this way, the elastic tension applied by the vapor-deposited film on the steel plate becomes uniform across the width of the steel plate.

(Function) The device according to the present invention is characterized in that by shifting the positions of the lower opening and the upper opening of the focusing coil, the movement path of the steam is bent to guide the steam flow to a desired area.

In other words, the position of the evaporation source is, for example, as shown in FIG.
Even if the plasma vapor flow is in sequence with respect to the traveling direction of the steel plate 5, it is possible to confine the plasma vapor flow within the focusing coil and guide the vapor flow to the deposition target.

Therefore, in the vicinity of the steel plate, simultaneous vapor deposition across the width of the plate is achieved regardless of the position of the evaporation source, and there is no deformation of the steel plate due to uneven elastic strain in the width direction of the plate.

Note that the above-described induction of the vapor flow is only possible with a plasma vapor flow with a high ionization rate obtained by the HCD method.

(Example) Actual cliff ±1 C: 0.046% (hereinafter simply referred to as %), Si
:3.39%, Mn: 0.067%, Mo:
0.013%, Se: 0.019%, Sb: 0
．． After hot-rolling a silicon steel slab containing 026% and the remainder being Fe to a thickness of 2.2 mm, it was heated at 950°C.
Cold rolling was performed twice with intermediate annealing for 3 minutes in between to obtain a final cold rolled sheet with a thickness of 0.20 mm.

After that, after decarburization and primary recrystallization annealing in wet hydrogen at 820'C, MgO (35%) and A
After applying a slurry of an annealing separator mainly composed of l 20a (5Q%) and TiO□ (5%), secondary recrystallization annealing at 850°C for 50 hours, followed by 10 hours at 1200°C in dry hydrogen. Purification treatment was performed.

After that, oxides on the surface of the steel plate were removed by pickling treatment, and then electrolytic polishing was performed to obtain a center line average roughness Ra of -0.06 μm.
A mirror-like layer was formed on the surface.

Thereafter, using the ion plating apparatus (adapted example) according to the present invention shown in FIG. 1, the line speed was set to 10 m/min.
Then, a T'tN film was formed to a thickness of 1.0 am.

The plasma generation conditions at this time were an acceleration voltage of 78V and a current of 1
000A, the excitation conditions of the focusing coil were 5V, 400A, and the degree of vacuum was 6' x 10-' torr.

For comparison, a conventional ion booting device (line speed: 10 m/min, plasma generation conditions: 75 mm, 1500 A, vacuum level - B x 10 -
'torr) (conventional example)
We also conducted eight rounds of inspections.

The magnetic properties, adhesion, and presence or absence of deformation of each product thus obtained are summarized in Table 1.

Table 1 *Actual diameter where the coating does not peel off even after 180° bending]
l Coarse carbon: 0.041%, Si: 0.17%, M
n: 1.1%, Cr: 18.2%, Mo:
0.3 m hot rolled stainless steel plate containing 1.1%
After cold rolling to a thickness of m, annealing treatment was performed at 800"C, and then a continuous ion plating apparatus according to the present invention shown in FIG. 1 (line speed: 15 m/min, acceleration voltage 75 V, current 1000 A, vacuum degree 7.5Xl0
-'torr) to 0.8 p of Ti (CN)
It was coated with a thickness of m.

The obtained steel plate had no deformation at all, and the adhesion was 20 mm.
Even after bending twice at 180° at φ, there was no peeling, showing good results.

(Effects of the Invention) According to the present invention, a uniform coating with excellent adhesion can be simultaneously formed in the width direction of a strip, and the range of application of ion plating can be further expanded.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an ion plating evaporator according to the present invention, and FIG. 2 is a schematic diagram showing the arrangement of a conventional evaporation source. 1.1'... Crucible 2,2'... Evaporation source 33
'...HCD gun 4.4'...Focusing coil 4a,
4'a, 4b, 4'b...Opening 5...Steel plate 6.6'...Reactant gas inlet pipe Fig. 1 (a) Tack grade "-Ninichiyu 5

Claims (1)

[Claims] 1. Vapor deposition by introducing a strip into a vacuum chamber in which a plurality of crucibles containing evaporation sources, a plurality of hollow cathodes for plasma generation and a reaction gas introduction tube corresponding to the crucibles are arranged. In the HCD method ion plating apparatus, each crucible is equipped with a cylindrical focusing coil having openings at the top and bottom that surrounds its outer periphery and extends to the vicinity of the strip, and the upper opening of each focusing coil is connected to the strip. An ion plating evaporation device characterized in that the evaporation devices are arranged in parallel and adjacent to each other in a direction substantially perpendicular to the direction of movement of objects.