JPH0248624B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus for forming a film of a substance on a substrate.

[Conventional technology]

When forming a film by conventional sputtering,
A sputtering device as shown in FIG. 1 is used.

This sputtering apparatus has a structure in which a cathode 6 consisting of a target material 5 and a magnet 2 is arranged at the bottom of a vacuum chamber 1, and a rotating plate 3 is provided on the ceiling of the vacuum chamber 1 above the cathode 6. A base material 4 is fixed on the lower surface of the substrate 3, and the rotary plate 3 is rotated and stopped directly above the cathode 6 on which a film is to be formed. The film is formed by scattering it onto the material 4 at each location.

However, in the case of this conventional structure, when attempting to attach multiple cathodes 6, the volume of the vacuum chamber 1 increases, which increases the size of the device itself, which has the drawback of taking up space, and also requires the vacuum chamber 1 to be evacuated. Therefore, a large vacuum pump must be used, which has the drawback of increasing the price.

Furthermore, the evacuation time was longer, and the workability was correspondingly lower.

[Problem that the invention seeks to solve]

The present invention solves these drawbacks; the device itself is smaller, a smaller vacuum pump can be used, making the device cheaper, and the evacuation time is shortened, increasing the efficiency of film-forming work. The present invention provides a sputtering device that has the following features.

[Means for solving problems]

In a sputtering device that forms a film on the surface of a base material 12 by scattering substances ejected from the cathode a by the impact of cations onto the surface of the base material 12 in a vacuum state, a plurality of cathodes a are placed in a vacuum chamber 13. A rotating plate 14 arranged on the circumference is provided, and a film forming chamber 15 is opened and connected to the ceiling of the rotating plate 14.

[Effect]

The inside of the vacuum chamber 13 is brought into a low pressure state, and the rotating plate 14 is rotated to stop the cathode a directly below the base material 12 provided in the film forming chamber 15.

In this state, the substance ejected from the cathode a by the impact of cations is scattered onto the surface of the base material 12 to form a first layer on the surface of the base material 12.

After the film formation is completed, the rotary plate 14 is rotated to form the second layer while the next cathode a is stopped directly below the base material 12.

By repeating this operation, a multilayer film can be formed on the surface of the base material 12.

In the case of FIG. 4, when the rotary plate 14 is rotated to stop the target material 11 directly above the magnet 10, the target material 11 and the magnet 10 form a cathode a, and from this cathode a, the cathode a is bombarded with cations. The ejected substance is scattered onto the surface of the base material 12 to form a film.

In the case of a multilayer film, the above operation is repeated to form the film.

〔Example〕

FIG. 2 shows a rotation introduction shaft 16 at the center of the rotation plate 14.
is supported by a bearing at the center of the bottom of the vacuum chamber 13 via a vacuum seal 17, and a rotation mechanism 18 is attached to this rotation introduction shaft 16.
has been established.

This rotating plate 14 may be circular as shown in FIG. 5, or cross-shaped as shown in FIG. 6. In the case of FIG. They are provided at intervals, and in the case of FIG. 6, a cathode a is provided at the tip of each.

A power supply terminal 19 is provided on one side of the vacuum chamber 14 so as to be able to come into contact with and separate from the cathode a, and a power supply 20 is connected to this power supply terminal 19.

A rotary joint 21 is attached to this rotation introduction shaft 16.
is provided, and from this rotary joint 21 the cathode a
The figure shows a case where the cathode a is cooled by supplying water for cooling.

Further, the vacuum chamber 13 is provided with an exhaust port 22 to which a vacuum pump is connected and a gas inlet 23 to which gas is introduced.

A base material 12 is placed on one side of the ceiling 13a of this vacuum chamber 13.
A shutter 24 is provided directly below the opening of the film forming chamber 15 so as to be horizontally rotatable. The attachment jig 27 is a lid.

FIG. 3 shows a case in which film forming chambers 15 are provided on both sides of the ceiling 13a of the vacuum chamber 13 to form films on two substrates 12 at the same time, but by further increasing the number of film forming chambers 15, , it is possible to form films on a plurality of base materials 12 at the same time.

The cathode a in FIG. 4 is fixed to the bottom of the vacuum chamber 13 without directly attaching the magnet 10 to the target material 11, and by rotating the rotary plate 14, the target material 11 is attached to the magnet 1.
0, target material 11 and magnet 1.
The figure shows the case where sputtering is performed when the cathode a is formed using 0 and 0.

In this case as well, the rotation introducing shaft 1
6 is provided with a rotary joint 21, and this rotary joint 21 supplies the cooling water to the target material 1.
1 Supply water to the back side to cool it down.

A case is illustrated in which the power source 20 and the rotation introduction shaft 16 are connected to transmit the rotation to the target material 11. (2
8 is an insulating part, 29 is a shield plate) [Effects of the Invention] Since the present invention is configured as described above, it has the following features.

1 As shown in Fig. 1, a conventional sputtering device has a structure in which a cathode 6 is placed at the bottom of a vacuum chamber 1, and a rotating plate 3 is provided at the top of the vacuum chamber 1 above this cathode 6. A base material 4 is fixed to the lower surface of 3, and the rotary plate 3 is rotated and stopped directly above the cathode 6 on which a film is to be formed. Since the film is formed by scattering onto the material 4 and forming a film at each position, when a large number of cathodes 6 are attached, the volume of the vacuum chamber 1 increases, which increases the size of the device itself, which has the drawback of taking up space. Furthermore, a large-sized vacuum pump must be used to evacuate the vacuum chamber 1, resulting in an increase in cost.

Furthermore, the evacuation time was longer, and the workability was correspondingly lower.

In this regard, in the present invention, since the vacuum chamber 13 and the film forming chamber 15 are separated, the vacuum chamber 13 itself can be made very small, and therefore the device itself can be made small. Since a sufficiently low pressure can be obtained in a short period of time, work efficiency is improved.

2 Since a rotary plate 14 with a plurality of cathodes a arranged on the circumference is provided in this vacuum chamber 13, the rotary plate 14
By rotating the cathode a and positioning it directly below the film forming chamber 15 and sequentially performing sputtering, multiple layers can be formed without exposing the target material 11 and the base material 12 to the atmosphere, resulting in extremely high work efficiency. This will increase the improvement of

3 As shown in FIG. 3, by providing a plurality of film forming chambers 15, it is possible to simultaneously form films on a plurality of substrates 12, thereby further increasing the efficiency of the film forming process.

4 As shown in Fig. 4, since the target material 11 and the magnet 10 are separated and the magnet 10 is fixed at the bottom of the vacuum chamber 13, it is possible to convert only the target material 11 by changing the substance to be deposited. It is convenient and economical.

[Brief explanation of the drawing]

The drawings show one embodiment of the present invention; FIG. 1 is a front sectional view of a conventional sputtering device, FIG. 2 is a front sectional view of this device, and FIGS. 3 and 4 are front sectional views of other examples of this device. 5 and 6 are plan views of the rotating plate. a... cathode, 10... magnet, 11... target material, 12... base material, 13... vacuum chamber, 13a...
...Ceiling part, 14... Rotating plate, 15... Film forming chamber.

Claims (1)

[Claims] 1. In a sputtering device that forms a film on the surface of a substrate by scattering substances ejected from the cathode by the impact of cations onto the surface of the substrate in a vacuum state, a plurality of sputtering devices are installed in a vacuum chamber. A rotating plate with cathodes arranged on the circumference is provided, a film forming chamber is opened in the ceiling of this vacuum chamber, and the rotating plate is rotated to stop the cathode directly below the film forming chamber to perform sputtering. A sputtering device characterized by: 2 In a sputtering device that forms a film on the surface of a substrate by scattering substances ejected from the cathode by the impact of cations onto the surface of the substrate in a vacuum state, multiple target materials are placed circumferentially in a vacuum chamber. A rotating plate is provided, a film forming chamber is opened and connected to the ceiling of this vacuum chamber, a magnet is fixed to the bottom of the vacuum chamber located directly below this film forming chamber, and this rotating plate is rotated. A sputtering device that performs sputtering when a target material is stopped on a magnet.