JPH0246636A - Image display device and its manufacture - Google Patents
Image display device and its manufactureInfo
- Publication number
- JPH0246636A JPH0246636A JP19741188A JP19741188A JPH0246636A JP H0246636 A JPH0246636 A JP H0246636A JP 19741188 A JP19741188 A JP 19741188A JP 19741188 A JP19741188 A JP 19741188A JP H0246636 A JPH0246636 A JP H0246636A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- image display
- cold cathode
- display device
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は冷陰極を用いた薄型画表示装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin image display device using a cold cathode.
従来の技術
従来から冷陰極を２次元に配列し、ｘ−ｙマトリックス
電極を用いて制御し画像表示を行なう薄型表示装置は数
多く報告されている。その中でも薄膜電界放出型冷陰極
を用いた薄型表示装置が注目される。この薄型表示装置
は第６図に示すように基板表面に１０６〜１０７個／Ｃ
２ｆの高密度に形成したミクロンサイズの薄膜電界放出
型冷陰極を用いるものである。2. Description of the Related Art Many thin display devices have been reported in which cold cathodes are arranged two-dimensionally and controlled using xy matrix electrodes to display images. Among these, thin display devices using thin film field emission cold cathodes are attracting attention. As shown in Figure 6, this thin display device has 106 to 107 cells/C on the substrate surface.
A micron-sized thin film field emission type cold cathode formed at a high density of 2f is used.
この冷陰極は図に示すように基板２１の表面にマトリッ
クス電極の一方のＸ電極２２を形成し、その表面に絶縁
層２３ともう一方のＹ電極２４を形成し、Ｘ−Ｙ電極の
各交点の部分のＹ電極に１６〜２μｍの微小な孔２６を
ホトエツチング技術によって１ｏｏＯ個以上設け、更に
絶縁層２３をエツチングする。こうして形成した基板を
回転させながらタングステン、モリブデンなどの高隔点
金属を斜蒸着して円錐状の冷陰極チップ２６を形成する
。冷陰極形成後、表面の不要金属層を除去して薄膜電界
放出型冷陰極電子源が作られる。As shown in the figure, in this cold cathode, one X electrode 22 of the matrix electrode is formed on the surface of a substrate 21, an insulating layer 23 and the other Y electrode 24 are formed on the surface, and each intersection of the X-Y electrodes is formed. At least 100 minute holes 26 of 16 to 2 .mu.m are formed in the Y electrode at the portion by photo-etching, and the insulating layer 23 is further etched. While rotating the thus formed substrate, a high separation point metal such as tungsten or molybdenum is obliquely deposited to form a conical cold cathode chip 26. After forming the cold cathode, unnecessary metal layers on the surface are removed to create a thin film field emission type cold cathode electron source.
このＸ−Ｙマトリックス電子源と蛍光体を塗布したフェ
ースプレートとを対向させて画像表示装置が構成されて
いる。この画像表示装置は各画素に１ｏｏＯ個以上もの
微小電子源を有する持っているため、個々の微小電子源
に特性上のバラツキがあっても全体としては平均化され
た特性となり画面全体にわたって比較的均一な明るさが
得られる特長を持っている。An image display device is constructed by making this XY matrix electron source and a face plate coated with phosphor face each other. This image display device has 100 or more microelectron sources in each pixel, so even if there are variations in the characteristics of individual microelectron sources, the characteristics as a whole are averaged, and the characteristics are relatively uniform over the entire screen. It has the feature of providing uniform brightness.
発明が解決しようとする課題
前記の画像表示装置は前述のように良い特長を持ってい
るにもかかわらず実用化に至っていない。Problems to be Solved by the Invention Although the above-mentioned image display device has good features as described above, it has not been put into practical use.
その理由の１つは製造工程が複雑でコストが高くなるこ
とと表示装置として必要な面積に−様な電界放出型冷陰
極が作れないことにある。また他の理由は電子ビームに
よって残留ガスがイオン化され、陰極と蛍光体面間に印
加される陽極電圧によって加速された高エネルギのイオ
ンが円錐形状の冷陰極に衝突し、スパッタするため寿命
が短かく、動作が不安定となることである。One of the reasons for this is that the manufacturing process is complicated and the cost is high, and that a field emission type cold cathode cannot be made in the area required for a display device. Another reason is that the residual gas is ionized by the electron beam, and high-energy ions accelerated by the anode voltage applied between the cathode and the phosphor surface collide with the conical cold cathode and cause sputtering, resulting in a short lifetime. , the operation becomes unstable.
課題を解決するための手段
Ｘ−Ｙマトリックス電極によって制御する電子源を備え
た絶縁性背面板と蛍光体を塗着したフェースプレートを
対向させた画像表示装置において、Ｘ−Ｙマトリックス
電極の各交点に設ける電子源を、Ｘアレー電極に接続し
た電極（以後冷陰極と呼ぶ）と、これに同一平面上で対
向するＹアレー電極（以後冷陰極と対向する部分をゲー
ト電極と呼ぶ）とで構成する。Means for Solving the Problem In an image display device in which an insulating back plate equipped with an electron source controlled by an X-Y matrix electrode and a face plate coated with a phosphor face each other, each intersection of the X-Y matrix electrodes is The electron source provided in do.
作用
このように同一平面上に対向して配置した冷陰極（Ｘア
レー電極）とゲート電極（Ｙアレー電極）との間に電圧
を印加すると、冷陰極とゲート電極間に高電界が発生し
、電子放出が起る。放出された電子の一部は対向するゲ
ート電極に衝突するが、ゲート電極の表面で２次電子を
発生する。発生した２次電子は対向するフェースプレー
トの蛍光面に印加する正の電圧（以後陽極電圧と呼ぶ）
によって加速され蛍光体に衝突して、蛍光体を発光させ
る。Effect When a voltage is applied between the cold cathode (X array electrode) and the gate electrode (Y array electrode) that are arranged facing each other on the same plane, a high electric field is generated between the cold cathode and the gate electrode. Electron emission occurs. Some of the emitted electrons collide with the opposing gate electrode, generating secondary electrons on the surface of the gate electrode. The generated secondary electrons apply a positive voltage (hereinafter referred to as anode voltage) to the fluorescent screen of the facing face plate.
is accelerated and collides with the phosphor, causing it to emit light.
上記構成のように同一平面内に冷陰極とゲート電極を構
成すると、冷陰極とゲート電極との間隔は１μｍ程度で
あって、この間で残留ガスがイオン化されて陰極尖端部
に衝突するイオンの量は従来の構成のものに比較して数
百分の１となり、陰極尖端部のイオン衝突によるスバタ
ーされる量も若木発明の画像表示装置の断面の一部を第
１図に示す。画像表示装置はＸ−Ｙマトリックス電極の
各交点に電界放出電子源を設けたガラス基板１と蛍光体
を塗着したフェースプレート２を対向させて構成する。When the cold cathode and the gate electrode are configured in the same plane as in the above configuration, the distance between the cold cathode and the gate electrode is about 1 μm, and the residual gas is ionized during this interval, and the amount of ions collides with the cathode tip. FIG. 1 shows a part of the cross section of the image display device of Wakagi's invention. The image display device consists of a glass substrate 1 provided with field emission electron sources at each intersection of XY matrix electrodes and a face plate 2 coated with phosphor, which are opposed to each other.
前記電界放出電子源は、Ｘ電極３０表面を被覆する絶縁
層４の表面にお互いに対向した冷陰極７とゲート電極６
とで構成されている。The field emission electron source includes a cold cathode 7 and a gate electrode 6 facing each other on the surface of the insulating layer 4 covering the surface of the X electrode 30.
It is made up of.
冷陰極７は絶縁層４に設けたスルーホール６を通してＸ
電極３に接続されている。第２図はこの電子源を上面か
ら見た時の電極の構成を単純化して示しである。ゲート
電極５に対向する冷陰極７の端面には多数の凸状部１２
が形成されている。冷陰極７に設けた凸状部の尖端とゲ
ート電極６の間隔は０．５〜２μｍである。一方、フェ
ースプレート２は透明なガラス基板で、その表面に透明
電極８、例えばＩＴＯ膜（酸化インシーム・錫膜、また
は５ｎ０２膜を設け、その表面に低速電子線用蛍光体、
例えばＺｎＯ：Ｚｎからなる蛍光体９が塗布されている
。The cold cathode 7 is connected to X through a through hole 6 provided in the insulating layer 4.
Connected to electrode 3. FIG. 2 shows a simplified structure of the electrodes when this electron source is viewed from above. A large number of convex portions 12 are formed on the end surface of the cold cathode 7 facing the gate electrode 5.
is formed. The distance between the tip of the convex portion provided on the cold cathode 7 and the gate electrode 6 is 0.5 to 2 μm. On the other hand, the face plate 2 is a transparent glass substrate, on the surface of which a transparent electrode 8, for example, an ITO film (oxide inseam/tin film, or 5n02 film) is provided, and a phosphor for low-speed electron beam,
For example, a phosphor 9 made of ZnO:Zn is coated.
このように構成したＸ電極（冷陰極）とＹ電極（ゲート
電）間に１００Ｖ〜１５０Ｖの電圧を印加すると冷陰極
の凸状部の尖端には〜１ｏ Ｖ／ｃｍの強電界が発生し
、尖端部から電子放出が起る。When a voltage of 100V to 150V is applied between the X electrode (cold cathode) and Y electrode (gate electrode) configured in this way, a strong electric field of ~1o V/cm is generated at the tip of the convex part of the cold cathode. Electron emission occurs from the tip.
この電子は１０ｏ〜１５０ｅＶに加速されてゲート電極
に衝突し２次電子１０を放出する。発生した２次電子は
対向するフェースプレートの透明電極８に印加する陽極
電圧（０２〜１ＫＶ ）によって加速され、蛍光体に衝
突して蛍光体を発光させる。この時、冷陰極の凸状部１
２の尖端部分下層の絶縁層１１の一部または全部を除去
すると尖端部により強い電界が発生し、電子放出が起り
易くなり、駆動電圧を下げる効果がある。These electrons are accelerated to 100 to 150 eV, collide with the gate electrode, and emit secondary electrons 10. The generated secondary electrons are accelerated by an anode voltage (02 to 1 KV) applied to the transparent electrode 8 of the facing face plate, and collide with the phosphor, causing the phosphor to emit light. At this time, the convex portion 1 of the cold cathode
If part or all of the insulating layer 11 under the tip portion 2 is removed, a stronger electric field is generated at the tip portion, making it easier to emit electrons, which has the effect of lowering the driving voltage.
また、実施したより具体的な電極構成の斜視図を第３図
に示す。冷陰極７とゲート電極６は櫛の歯状に形成され
、お互いに噛合った状態に形成した。これは冷陰極に設
けた凸状部１２を出来るだけ多くして電子放出電流を多
くするためとエツチング誤差による各冷陰極尖端部から
の放出電流のバラツキによる画素間のバラツキを小さく
するためである。また、冷陰極とゲート電極の対向面が
Ｙ電極の長手方向に垂直（Ｘ電極の長手方向）となるよ
うに構成した。これは冷陰極の尖端部から放射した電子
の一部はゲート電極に衝突して２次電子を発生するが、
一部の電子はゲート電極に衝突せず隣の画素まで発散し
、クロストークの原因となるのを防止するためである。Further, a perspective view of a more specific electrode configuration that was implemented is shown in FIG. The cold cathode 7 and the gate electrode 6 were formed in the shape of comb teeth, and were formed in a state in which they were engaged with each other. This is to increase the electron emission current by increasing the number of convex portions 12 provided on the cold cathode as much as possible, and to reduce the variation between pixels due to variation in the emission current from each cold cathode tip due to etching error. . Further, the opposing surfaces of the cold cathode and the gate electrode were configured to be perpendicular to the longitudinal direction of the Y electrode (the longitudinal direction of the X electrode). This is because some of the electrons emitted from the tip of the cold cathode collide with the gate electrode and generate secondary electrons.
This is to prevent some of the electrons from colliding with the gate electrode and spreading to neighboring pixels, causing crosstalk.
第４図はＹ電極の長手方向に（Ａ−Ａ’線に沿って）切
断した断面の電子ビームの軌道を示す。第４図かられか
るように、ゲート電極に衝突しない電子ビームは次の冷
陰極が作る減速電界によって減速され、陽極電圧によっ
て加速されて蛍光体面に向って曲げられ、隣接する画素
まで発散しない。従って、一つの画素に対応する電子源
から発射した電子は一つの画素内の蛍光体に衝突し、ク
ロストークを防止することができる。FIG. 4 shows the trajectory of the electron beam in a cross section cut in the longitudinal direction of the Y electrode (along the line AA'). As can be seen from FIG. 4, the electron beam that does not collide with the gate electrode is decelerated by the deceleration electric field created by the next cold cathode, accelerated by the anode voltage, and bent toward the phosphor surface, so that it does not diverge to adjacent pixels. Therefore, electrons emitted from an electron source corresponding to one pixel collide with the phosphor within one pixel, and crosstalk can be prevented.
冷陰極のイオンスパタリングによる劣化の速さはパネル
内の残留ガス圧Ｐと電極間隔ｄの積Ｐｄ（イオンの発生
量はＰｄに比例する）に比例する。The speed of deterioration of the cold cathode due to ion sputtering is proportional to the product Pd of the residual gas pressure P in the panel and the electrode spacing d (the amount of ions generated is proportional to Pd).
従来型の冷陰極ではｄは冷陰極と陽極であって、はぼ２
００〜３００μｍである。一方、本発明の場合は冷陰極
とゲート電極の間隔０５〜１μｍとすることができるか
ら、この間で発生するイオンの量は従来例に比べて１／
２００〜１／６ｏｏとなり、陰極の寿命は同じ残留ガス
圧の場合２００〜３００倍長くなる。In the conventional cold cathode, d is the cold cathode and the anode, and is approximately 2
00 to 300 μm. On the other hand, in the case of the present invention, the distance between the cold cathode and the gate electrode can be set to 05 to 1 μm, so the amount of ions generated between them is 1/1 compared to the conventional example.
200 to 1/6oo, and the life of the cathode is 200 to 300 times longer for the same residual gas pressure.
実施例２
第５図に実施例２の電極構成の要部を示す。ＸアレーＮ
’ＦＭ Ｌ ＊ ｘ２ ｒ ｘｓ・・・・・・ｘｎおよ
びＹア゛レー電極Ｌ Ｉ Ｙ２１ Ｙ５・・・・・・Ｙ
ｍでマトリックス電極を構成し、これらのＸアレー電極
に接続した櫛状冷陰極とＹアレー電極に接続した櫛状ゲ
ート電極の噛み合った電子部１５をＸアレー電極とＹア
レー電極が囲む基板表面に形成した。Example 2 FIG. 5 shows the main part of the electrode structure of Example 2. X array N
'FM L * x2 r xs...xn and Y array electrode L I Y21 Y5...Y
m to form a matrix electrode, and an electronic part 15 in which a comb-shaped cold cathode connected to the X array electrode and a comb-shaped gate electrode connected to the Y array electrode are meshed is placed on the substrate surface surrounded by the X array electrode and the Y array electrode. Formed.
即ち、２次電子放出部の電極がＸアレー電極およびＹア
レー電極表面上に重畳しない構成とした。That is, the electrode of the secondary electron emitting section was configured not to overlap the surfaces of the X array electrode and the Y array electrode.
これは絶縁層に発生するピンホールによる画電極のショ
ートの発生をなくすることと、ＸおよびＹアレー電極間
の電気容量を小さくする効果がある。This has the effect of eliminating the occurrence of short circuits in the picture electrodes due to pinholes generated in the insulating layer, and of reducing the capacitance between the X and Y array electrodes.
Ｘアレー電極幅を５０μｍ、Ｙアレー電極幅を２０μｍ
、画素の大きさを３００Ｘ３００１１ｍとしたとき、ピ
ンホールの発生割合、および電気容量共に１／２０〜１
１５ｏに低減することができた。X array electrode width is 50 μm, Y array electrode width is 20 μm.
, when the pixel size is 300 x 30011 m, both the pinhole generation rate and the electric capacitance are 1/20 to 1.
It was possible to reduce the temperature to 15o.
次にこの冷陰極の製造方法について説明する。Next, a method for manufacturing this cold cathode will be explained.
ガラス基板の表面にＸアレー電極を形成するだめの金属
、例えばニッケルを厚さ０．２μｍ全面に蒸着し１．ホ
トエツチング技術によってストライプ状に分離する。電
極幅はＱ、３ｍｍとした０次に、絶縁層として５ｉ０２
膜をＣＶＤ法によって厚さ１μｍ形成し、Ｘアレー電極
上の一部にホトエツチングによってスルーホールを形成
した。更に、その上に厚さ０２μｍのタングステン金属
膜を蒸着し、同じくホトエツチング技術によってゲート
電極（Ｙアレー電極）５と冷陰極７を同時に形成した。1. A metal for forming the X array electrode, such as nickel, is deposited on the entire surface of the glass substrate to a thickness of 0.2 μm.1. Separate into stripes using photoetching technology. The electrode width was Q, 3 mm, 0th order, and the insulating layer was 5i02.
A film was formed to a thickness of 1 μm by CVD, and a through hole was formed in a portion of the X array electrode by photoetching. Furthermore, a tungsten metal film with a thickness of 02 μm was deposited thereon, and a gate electrode (Y array electrode) 5 and a cold cathode 7 were simultaneously formed using the same photoetching technique.
冷陰極の凸状部は１画素当り約６００個形成し、ゲート
電極との間隔は１μｍとした。次に、こうして製作した
基板全体を５ｉ０２膜エツチング液に浸漬して第２図に
示す冷陰極尖端部の凹部１１を形成した。Approximately 600 convex portions of the cold cathode were formed per pixel, and the distance from the gate electrode was 1 μm. Next, the entire substrate thus manufactured was immersed in a 5i02 film etching solution to form a recess 11 at the tip of the cold cathode shown in FIG.
Ｘアレー電極を形成する金属はニッケルに限られるもの
ではなく、アルミニウム、チタン、金クロム合金などガ
ラス基板と密着性が良く、比抵抗の低い金属が望ましい
。絶縁層としては５１０２膜に限られるものではなく、
ＳｉＮ 、 ＢＮ 、 ３ｉ０など絶縁性の良い材料で
あれば良い。冷陰極材料としてはタングステン以外にモ
リブデン、タンタル、チタンなど高隔点金属が望ましい
。The metal forming the X array electrode is not limited to nickel, but metals such as aluminum, titanium, and gold-chromium alloys that have good adhesion to the glass substrate and have low specific resistance are desirable. The insulating layer is not limited to the 5102 film,
Any material with good insulation properties, such as SiN, BN, or 3i0, may be used. In addition to tungsten, high-temperature metals such as molybdenum, tantalum, and titanium are desirable as cold cathode materials.
このようにして４８０Ｘ６６０個のマトリックス電子源
を形成したガラス基板と厚さ０．２μｍのＩＴＯを蒸着
しＺｎＯ： Ｚｎ蛍光体を塗着したフェースプレートと
をｏ、 ｓ ｍｍの間隔を保って対向させ、周囲を低融
点ガラス７リツトでシールし、真空排気して画面サイズ
１０インチの画像表示装置を作ったＯ
冷陰極（垂直走査電極）をアース電位とし、ゲート電極
（ビデオ信号変調電極）に１ ｓｏｗ印加すると、１画
素当り約１０μ人の電子放出電流を得た。蛍光体面に５
００Ｖ印加し、フィールド周波数６０Ｈｚで線順次駆動
を行なうと約５Ｏｆ’Ｌの面輝度を得た。電界放出型冷
陰極の電子放出はゲート電圧に対して指数関数的に変化
する。ゲート電極に１００ｖ印加しても電子放出は殆ん
ど起らず、カットオフ状態にある。従って、ゲート電極
には約１ｏｏｖのバイアス電圧を印加しておき、ビデオ
変調信号電圧はｓｏｙとした。また、電子放出特性は信
号電圧に敏感であシ、パルス波高変調よりもパルス幅変
調が望ましく１２８階調のパルス幅変調を行った。The glass substrate on which 480 x 660 matrix electron sources were formed in this way and the face plate on which ITO with a thickness of 0.2 μm was vapor-deposited and ZnO:Zn phosphor was coated were placed facing each other with an interval of o, s mm maintained. The surrounding area was sealed with 7 liters of low-melting point glass and evacuated to create an image display device with a screen size of 10 inches.The cold cathode (vertical scanning electrode) was set to ground potential, and the gate electrode (video signal modulation electrode) was When sow was applied, an electron emission current of about 10 μm per pixel was obtained. 5 on the phosphor surface
When 00V was applied and line sequential driving was performed at a field frequency of 60Hz, a surface brightness of about 5Of'L was obtained. Electron emission of a field emission cold cathode changes exponentially with gate voltage. Even when 100V is applied to the gate electrode, almost no electron emission occurs and the gate electrode is in a cut-off state. Therefore, a bias voltage of about 1 oov was applied to the gate electrode, and the video modulation signal voltage was set to soy. Furthermore, since the electron emission characteristics are sensitive to signal voltage, pulse width modulation is more desirable than pulse height modulation, and 128-gradation pulse width modulation was performed.
この実施例ではＺｎＯ： Ｚｎ蛍光体を用いたが、赤、
緑、青の３原色をストライプ状に塗着すればカラー表示
ができることは言うまでもない。In this example, ZnO: Zn phosphor was used, but red,
It goes without saying that color display can be achieved by painting the three primary colors of green and blue in stripes.
発明の効果
本発明によれば、Ｘアレー電極表面に被覆した絶縁層表
面に蒸着した高融点金属薄膜のエツチングによって多数
の冷陰極とゲート電極を同時に形成できるため均一性が
良く、かつ安価に製造できる。Effects of the Invention According to the present invention, a large number of cold cathodes and gate electrodes can be formed simultaneously by etching a high melting point metal thin film deposited on the surface of an insulating layer coated on the surface of the X array electrode, resulting in good uniformity and low manufacturing cost. can.
また冷陰極とゲート電極の対向面をゲートアレー電極の
長手方向に垂直となるように配置することによってクロ
ストークを防止することができる０In addition, crosstalk can be prevented by arranging the opposing surfaces of the cold cathode and the gate electrode perpendicular to the longitudinal direction of the gate array electrode.
第１図は本発明の一実施例における画像表示装置の部分
断面図、第２図は第１図の実施を例における電子源部の
要部平面図、第３図は同実施例における電子源部の斜視
図、第４図は、第３図人−人′線における断面図、第５
図は、本発明の他の実施例における電極配置の概念を示
す平面図、第６図ａおよびｂは、各々従来の電界放射型
マトリックス表示装置の斜視図および要部拡大斜視図で
ある。
１・・・・・・絶縁基板、２・・・・・・フェースプレ
ート、３・・・・・・Ｘアレー電極、４・・・・・・絶
縁層、５・・・・・・Ｙアレー電極（ゲート電極）、６
・・・・・・スルーホール、７・・・・・・冷陰極、８
・・・・・・透明電極、９・・・・・・蛍光体、１０・
・・・・・２次電子、１１・・・・・・絶縁層除去部。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第
図
纂
第
図
第
図
図
？
第
図FIG. 1 is a partial cross-sectional view of an image display device according to an embodiment of the present invention, FIG. 2 is a plan view of a main part of an electron source in the implementation of FIG. 1, and FIG. 3 is a partial sectional view of an electron source in the same embodiment. FIG. 4 is a perspective view of the section, and FIG.
6 is a plan view showing the concept of electrode arrangement in another embodiment of the present invention, and FIGS. 6a and 6b are a perspective view and an enlarged perspective view of essential parts of a conventional field emission type matrix display device, respectively. DESCRIPTION OF SYMBOLS 1...Insulating substrate, 2...Face plate, 3...X array electrode, 4...Insulating layer, 5...Y array Electrode (gate electrode), 6
...Through hole, 7...Cold cathode, 8
...Transparent electrode, 9 ... Phosphor, 10.
...Secondary electron, 11...Insulating layer removed part. Name of agent: Patent attorney Shigetaka Awano and one other person Diagram
Claims (8)
電子源を備えた絶縁性背面板と蛍光体を塗着したフェー
スプレートを対向させた画像表示装置において、前記Ｘ
−Ｙマトリックス電極の各交点に構成される電子源が、
同一平面上に形成された冷陰極とゲート電極とから成る
プレーナー型電界放出電子源であることを特徴とする画
像表示装置。(1) In an image display device in which an insulating back plate equipped with a two-dimensional electron source controlled by an X-Y matrix electrode and a face plate coated with phosphor face each other, the
- An electron source configured at each intersection of the Y matrix electrode,
An image display device characterized in that it is a planar field emission electron source comprising a cold cathode and a gate electrode formed on the same plane.
子源が、Ｘアレー電極表面に被覆した絶縁層の一部に設
けたスルーホールを通して接続された冷陰極と、これに
対向するＹアレー電極に接続されたゲート電極とで構成
されていることを特徴とする特許請求の範囲第１項に記
載の画像表示装置。(2) An electron source configured at each intersection of the X-Y matrix electrode is connected to a cold cathode through a through hole provided in a part of the insulating layer coated on the surface of the X-array electrode, and a Y-array facing the cold cathode. The image display device according to claim 1, further comprising a gate electrode connected to the electrode.
部を設けたことを特徴とする特許請求の範囲第１項また
は第２項に記載の画像表示装置。(3) The image display device according to claim 1 or 2, characterized in that a large number of convex portions are provided in a portion of the cold cathode facing the gate electrode.
縁層の一部が除去されていることを特徴とする特許請求
の範囲第３項に記載の画像表示装置。(4) The image display device according to claim 3, wherein at least a portion of the insulating layer below the tip of the convex portion provided on the cold cathode is removed.
極が櫛状に形成され、お互に噛み合った形状に構成され
ていることを特徴とする特許請求の範囲第１項に記載の
画像表示装置。(5) Image display according to claim 1, characterized in that both opposing electrodes constituting the X-Y matrix electrode are formed in a comb shape and are configured in a mutually interlocking shape. Device.
向に垂直（Ｘアレー電極の長手方向）であることを特徴
とする特許請求の範囲第５項に記載の画像表示装置。(6) The image display device according to claim 5, wherein the opposing surfaces of the two opposing electrodes are perpendicular to the longitudinal direction of the Y array electrode (the longitudinal direction of the X array electrode).
がＸアレー電極およびＹアレー電極の少なくとも一方の
アレー電極上を除く部分に形成されていることを特徴と
する特許請求の範囲第１項に記載の画像表示装置。(7) The electron source section in which the cold cathode and the gate electrode are interlocked in a comb shape is formed in a portion of at least one of the X array electrode and the Y array electrode except for the area above the array electrode. The image display device according to item 1.
造法であって、絶縁基板表面にＸアレー電極を形成し、
全面に絶縁層を被覆し、前記Ｘアレー電極上の絶縁層の
一部にスルーホールを設け、全面に電極用金属薄膜を被
覆し、エッチング法によって同時に冷陰極とＹアレー電
極を形成することを特徴とする画像表示装置の製造法。(8) A method for manufacturing an image display device according to claim 2, which comprises forming an X array electrode on the surface of an insulating substrate,
The entire surface is coated with an insulating layer, a through hole is provided in a part of the insulating layer on the X array electrode, the entire surface is coated with a metal thin film for electrodes, and a cold cathode and a Y array electrode are simultaneously formed by an etching method. A method for manufacturing a featured image display device.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63197411A JP2623738B2 (en) | 1988-08-08 | 1988-08-08 | Image display device |
| DE1989616875 DE68916875T2 (en) | 1988-08-08 | 1989-08-07 | Image display device and method of manufacturing the same. |
| EP19890308020 EP0354750B1 (en) | 1988-08-08 | 1989-08-07 | Image display apparatus and method of fabrication thereof |
| CA000607771A CA1323901C (en) | 1988-08-08 | 1989-08-08 | Image display apparatus and method of fabrication thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63197411A JP2623738B2 (en) | 1988-08-08 | 1988-08-08 | Image display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0246636A true JPH0246636A (en) | 1990-02-16 |
| JP2623738B2 JP2623738B2 (en) | 1997-06-25 |
Family
ID=16374070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63197411A Expired - Fee Related JP2623738B2 (en) | 1988-08-08 | 1988-08-08 | Image display device |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0354750B1 (en) |
| JP (1) | JP2623738B2 (en) |
| CA (1) | CA1323901C (en) |
| DE (1) | DE68916875T2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH048246U (en) * | 1990-05-01 | 1992-01-24 | ||
| JPH04137343A (en) * | 1990-09-27 | 1992-05-12 | Agency Of Ind Science & Technol | Picture display device |
| JPH04308626A (en) * | 1991-01-24 | 1992-10-30 | Motorola Inc | Controlled apparatus for emitting electron induced by electric field from cold cathode |
| JPH052985A (en) * | 1990-11-28 | 1993-01-08 | Matsushita Electric Ind Co Ltd | Functional electron emitting element and its manufacture |
| JPH0574327A (en) * | 1991-02-22 | 1993-03-26 | Matsushita Electric Ind Co Ltd | Electron emitter |
| US6593950B2 (en) | 1991-10-08 | 2003-07-15 | Canon Kabushiki Kaisha | Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device |
| EP2251891A2 (en) | 2009-05-11 | 2010-11-17 | Canon Kabushiki Kaisha | Electron beam apparatus and image display apparatus |
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| US5217401A (en) * | 1989-07-07 | 1993-06-08 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a field-emission type switching device |
| JP2745814B2 (en) * | 1989-09-29 | 1998-04-28 | モトローラ・インコーポレイテッド | Flat panel display using field emission device |
| JP2968014B2 (en) * | 1990-01-29 | 1999-10-25 | 三菱電機株式会社 | Micro vacuum tube and manufacturing method thereof |
| US5267884A (en) * | 1990-01-29 | 1993-12-07 | Mitsubishi Denki Kabushiki Kaisha | Microminiature vacuum tube and production method |
| JP2656843B2 (en) * | 1990-04-12 | 1997-09-24 | 双葉電子工業株式会社 | Display device |
| JP2634295B2 (en) * | 1990-05-17 | 1997-07-23 | 双葉電子工業株式会社 | Electron-emitting device |
| US5140219A (en) * | 1991-02-28 | 1992-08-18 | Motorola, Inc. | Field emission display device employing an integral planar field emission control device |
| GB2259184B (en) * | 1991-03-06 | 1995-01-18 | Sony Corp | Flat image-display apparatus |
| US5382867A (en) * | 1991-10-02 | 1995-01-17 | Sharp Kabushiki Kaisha | Field-emission type electronic device |
| JP2669749B2 (en) * | 1992-03-27 | 1997-10-29 | 工業技術院長 | Field emission device |
| CA2112431C (en) * | 1992-12-29 | 2000-05-09 | Masato Yamanobe | Electron source, and image-forming apparatus and method of driving the same |
| US5455597A (en) * | 1992-12-29 | 1995-10-03 | Canon Kabushiki Kaisha | Image-forming apparatus, and designation of electron beam diameter at image-forming member in image-forming apparatus |
| CA2112733C (en) * | 1993-01-07 | 1999-03-30 | Naoto Nakamura | Electron beam-generating apparatus, image-forming apparatus, and driving methods thereof |
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| US6121942A (en) * | 1993-12-22 | 2000-09-19 | Canon Kabushiki Kaisha | Image-forming apparatus with correction in accordance with positional deviations between electron-emitting devices and image-forming members |
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| JP3062990B2 (en) * | 1994-07-12 | 2000-07-12 | キヤノン株式会社 | Electron emitting device, method of manufacturing electron source and image forming apparatus using the same, and device for activating electron emitting device |
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| KR100220133B1 (en) * | 1995-03-13 | 1999-09-01 | 미따라이 하지메 | Electron emission device, electron source and image forming device and the manufacturing method thereof |
| KR100211945B1 (en) * | 1995-12-20 | 1999-08-02 | 정선종 | Mux and demux circuits using photo gate transistors |
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|---|---|---|---|---|
| JPH048246U (en) * | 1990-05-01 | 1992-01-24 | ||
| JPH04137343A (en) * | 1990-09-27 | 1992-05-12 | Agency Of Ind Science & Technol | Picture display device |
| JPH052985A (en) * | 1990-11-28 | 1993-01-08 | Matsushita Electric Ind Co Ltd | Functional electron emitting element and its manufacture |
| JPH04308626A (en) * | 1991-01-24 | 1992-10-30 | Motorola Inc | Controlled apparatus for emitting electron induced by electric field from cold cathode |
| JPH0574327A (en) * | 1991-02-22 | 1993-03-26 | Matsushita Electric Ind Co Ltd | Electron emitter |
| US6593950B2 (en) | 1991-10-08 | 2003-07-15 | Canon Kabushiki Kaisha | Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device |
| EP2251891A2 (en) | 2009-05-11 | 2010-11-17 | Canon Kabushiki Kaisha | Electron beam apparatus and image display apparatus |
| US8093796B2 (en) | 2009-05-11 | 2012-01-10 | Canon Kabushiki Kaisha | Electron beam apparatus and image display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1323901C (en) | 1993-11-02 |
| JP2623738B2 (en) | 1997-06-25 |
| EP0354750A2 (en) | 1990-02-14 |
| EP0354750B1 (en) | 1994-07-20 |
| DE68916875D1 (en) | 1994-08-25 |
| DE68916875T2 (en) | 1995-01-12 |
| EP0354750A3 (en) | 1990-10-17 |
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