JPH0244734A - Manufacture of mis transistor - Google Patents
Manufacture of mis transistorInfo
- Publication number
- JPH0244734A JPH0244734A JP19519688A JP19519688A JPH0244734A JP H0244734 A JPH0244734 A JP H0244734A JP 19519688 A JP19519688 A JP 19519688A JP 19519688 A JP19519688 A JP 19519688A JP H0244734 A JPH0244734 A JP H0244734A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- forming
- mask
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052904 quartz Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000002708 enhancing Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
Abstract
PURPOSE: To improve punchthrough-breakdown strength by forming a third region with a gate electrode as a mask, then forming a first thin mask layer at least on the sidewall of the electrode in a direction for extending a semiconductor region forms a second mask layer to form a first region, and then forming a second region.
CONSTITUTION: An SiO2 film 22 is deposited on a whole Si substrate 11, and P- ions are implanted to form an n- type region 16 in a p- type region 21. In this case, since the film 22 exists, the length of the mask for the ion implantation is longer by the thickness of the film 22 than that of only a gate electrode 13 of a mask at the time of forming the region 21 at both sides of the electrode 13. Then, an SiO2 film 23 is again deposited on the whole substrate 11, the films 22, 23 are etched by RIE, sidewalls 14 of the films 22, 23 are formed, and with the electrode 13 and the sidewall 14 as masks P- ions are implanted to form an n+ type region 15. Thus, the width of a third region can be effectively obtained in a direction for extending a semiconductor region to enhance punchthrough-breakdown strength.
COPYRIGHT: (C)1990,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19519688A JPH0244734A (en) | 1988-08-04 | 1988-08-04 | Manufacture of mis transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19519688A JPH0244734A (en) | 1988-08-04 | 1988-08-04 | Manufacture of mis transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244734A true JPH0244734A (en) | 1990-02-14 |
Family
ID=16337051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19519688A Pending JPH0244734A (en) | 1988-08-04 | 1988-08-04 | Manufacture of mis transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244734A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006173438A (en) * | 2004-12-17 | 2006-06-29 | Yamaha Corp | Method of manufacturing mos type semiconductor device |
| US7223663B2 (en) | 2003-12-27 | 2007-05-29 | Dongbu Electronics Co., Ltd. | MOS transistors and methods of manufacturing the same |
| JP2007214503A (en) * | 2006-02-13 | 2007-08-23 | Yamaha Corp | Manufacturing method of semiconductor device |
-
1988
- 1988-08-04 JP JP19519688A patent/JPH0244734A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223663B2 (en) | 2003-12-27 | 2007-05-29 | Dongbu Electronics Co., Ltd. | MOS transistors and methods of manufacturing the same |
| JP2006173438A (en) * | 2004-12-17 | 2006-06-29 | Yamaha Corp | Method of manufacturing mos type semiconductor device |
| JP2007214503A (en) * | 2006-02-13 | 2007-08-23 | Yamaha Corp | Manufacturing method of semiconductor device |
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