JPH0243825B2 - - Google Patents
Info
- Publication number
- JPH0243825B2 JPH0243825B2 JP60132526A JP13252685A JPH0243825B2 JP H0243825 B2 JPH0243825 B2 JP H0243825B2 JP 60132526 A JP60132526 A JP 60132526A JP 13252685 A JP13252685 A JP 13252685A JP H0243825 B2 JPH0243825 B2 JP H0243825B2
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- split
- divided
- magnetic field
- magnets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000009826 distribution Methods 0.000 description 15
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔概要〕
マグネトロンスパツタ装置において、
ターゲツト２に磁界を及ぼすマグネツト４ａが
複数の分割マグネツト８で構成され、該マグネツ
ト４ａを取付けるマグネツト取付板５ａに該分割
マグネツト８を取付ける分割マグネツト取付部を
複数設け、該複数設けられた分割マグネツト取付
部に選択的に該複数の分割マグネツト８を取付け
ることにより該マグネツト取付板５ａ上における
該複数の分割マグネツト８の配設位置が可変にさ
れていることにより、
磁界の分布を調整可能にして、スパツタ膜の膜
厚分布を調整可能にしたものである。[Detailed Description of the Invention] [Summary] In a magnetron sputtering device, a magnet 4a that exerts a magnetic field on a target 2 is composed of a plurality of divided magnets 8, and the divided magnets 8 are attached to a magnet mounting plate 5a to which the magnet 4a is attached. By providing a plurality of split magnet mounting parts and selectively mounting the plurality of split magnets 8 to the plurality of split magnet mounting parts, the arrangement positions of the plurality of split magnets 8 on the magnet mounting plate 5a can be varied. This makes it possible to adjust the distribution of the magnetic field, thereby making it possible to adjust the thickness distribution of the sputtered film.
本発明は、マグネトロンスパツタ装置に係り、
特に、ターゲツトに及ぼす磁界を形成するマグネ
ツトの構成に関す。
The present invention relates to a magnetron sputtering device,
In particular, it relates to the structure of the magnet that forms the magnetic field that acts on the target.
マグネトロンスパツタ装置は、例えば半導体装
置製造のウエーハプロセスにおける電極や配線な
どを形成するための金属膜被着などに使用されて
いる。 Magnetron sputtering equipment is used, for example, for depositing metal films to form electrodes, wiring, etc. in a wafer process for manufacturing semiconductor devices.
この場合の被着面にはコンタクトホールなる窪
みがあるため、被着膜（スパツタ膜）は、ウエー
ハの全面に渡り均一であると共にコンタクトホー
ル部におけるステツプカバレージの良いことが重
要である。 In this case, since the deposited surface has depressions serving as contact holes, it is important that the deposited film (sputtered film) be uniform over the entire surface of the wafer and have good step coverage in the contact hole portions.
第４図は従来のマグネトロンスパツタ装置例の
要部構成を示す側断面図ａとそのマグネツト部分
の正面図ｂである。
FIG. 4 is a side sectional view (a) showing the main structure of a conventional example of a magnetron sputtering device, and a front view (b) of the magnet portion thereof.
第４図ａにおいて、１は真空チヤンバ、２はス
パツタする金属のターゲツト、３は真空チヤンバ
１から絶縁されターゲツト２を保持するバツキン
グプレート、４はバツキングプレート３の背後に
配設されたマグネツト、５はマグネツト４を固定
するマグネツト取付板、６はスパツタ膜を被着す
るウエーハ、である。 In Fig. 4a, 1 is a vacuum chamber, 2 is a sputtering metal target, 3 is a backing plate that is insulated from the vacuum chamber 1 and holds the target 2, and 4 is a magnet disposed behind the backing plate 3. , 5 is a magnet mounting plate for fixing the magnet 4, and 6 is a wafer to which a sputtered film is applied.
マグネツト４は、第４図ｂに示す如く、ターゲ
ツト２側にＮおよびＳ極面を向けるようなリング
状マグネツト７ａと柱状マグネツト７ｂからな
り、回転するマグネツト取付板５に偏心して固定
されてターゲツト２の前面に磁界を及ぼしてい
る。 As shown in FIG. 4b, the magnet 4 consists of a ring-shaped magnet 7a and a column-shaped magnet 7b, with the N and S pole faces facing the target 2 side. exerts a magnetic field in front of the
スパツタは、ウエーハ６の被着面６ａをターゲ
ツト２に対向させ真空チヤンバ１内を減圧アルゴ
ン雰囲気にしターゲツト２を陰極にした放電によ
つて行う。 Sputtering is performed by discharging the wafer 6 so that the adhered surface 6a faces the target 2, creating a reduced pressure argon atmosphere in the vacuum chamber 1, and using the target 2 as a cathode.
即ち、マグネトロンスパツタ装置においては、
マグネツト４の磁界によりターゲツト２近傍にお
けるアルゴンイオンの密度が高くなるため、被着
面６ａに高速でスパツタが形成される。 That is, in the magnetron sputtering device,
Since the magnetic field of the magnet 4 increases the density of argon ions in the vicinity of the target 2, spatter is formed at high speed on the adherend surface 6a.
このため、マグネツト４の磁界分布がスパツタ
膜の膜厚分布を支配する要因になつている。 Therefore, the magnetic field distribution of the magnet 4 becomes a factor that controls the film thickness distribution of the sputtered film.
一方この膜厚分布は、被着面６ａの全面に渡り
均一であることが望まれ、然も被着面６ａにコン
タクトホールがある場合にはそこのステツプカバ
レージの確保をも望まれている。 On the other hand, it is desired that this film thickness distribution be uniform over the entire surface of the adherend surface 6a, and if there is a contact hole on the adherend surface 6a, it is also desired to ensure step coverage there.
然るに上記二つの要望に適する磁界分布は一般
に一致しないので、磁界分布を定めるマグネツト
４の諸元は、両要望の兼ね合いを見て最適と判断
される状態に設定されている。 However, since the magnetic field distributions suitable for the above two requirements generally do not match, the specifications of the magnet 4 that determine the magnetic field distribution are set in a state that is determined to be optimal in view of the balance between the two requirements.
しかしながら上記マグネトロンスパツタ装置
は、マグネツト４の形成する磁界分布が一形態に
固定されており、スパツタする金属の相違やパワ
ーの変更などにより発生する膜厚分布ないしステ
ツプカバレージの変化に対処することが困難で、
十分に望ましいスパツタ膜が得られない場合があ
り、製造品質を低下させる問題がある。
However, in the above magnetron sputtering device, the magnetic field distribution formed by the magnet 4 is fixed in one form, and it is difficult to deal with changes in the film thickness distribution or step coverage that occur due to differences in the metal to be sputtered or changes in the power. difficult,
There are cases where a sufficiently desirable sputtered film cannot be obtained, resulting in a problem of deteriorating manufacturing quality.
第１図は本発明によるマグネトロンスパツタ装
置実施例の要部構成を示す側断面図ａとそのマグ
ネツト部分の正面図ｂ、第２図はその実施例にお
ける分割マグネツトの配置位置を変えた例を示す
マグネツト部分の正面図である。
Fig. 1 is a side sectional view (a) showing the main structure of a magnetron sputter device according to an embodiment of the present invention, and a front view (b) of the magnet portion thereof, and Fig. 2 is an example in which the arrangement position of the divided magnets in the embodiment has been changed. FIG. 3 is a front view of the magnet portion shown in FIG.
上記問題点は、ターゲツト２に磁界を及ぼすマ
グネツト４ａが複数の分割マグネツト８で構成さ
れ、該マグネツト４ａを取付けるマグネツト取付
板５ａに該分割マグネツト８を取付ける分割マグ
ネツト取付部を複数設け、該複数設けられた分割
マグネツト取付部に選択的に該複数の分割マグネ
ツト８を取付けることにより該マグネツト取付板
５ａ上における該複数の分割マグネツト８の配設
位置が可変にされていることを特徴とする本発明
のマグネトロンスパツタ装置によつて解決され
る。 The above problem arises because the magnet 4a that exerts a magnetic field on the target 2 is composed of a plurality of divided magnets 8, and the magnet mounting plate 5a to which the magnet 4a is attached is provided with a plurality of divided magnet attachment parts to which the divided magnets 8 are attached. The present invention is characterized in that the arrangement positions of the plurality of divided magnets 8 on the magnet mounting plate 5a are made variable by selectively attaching the plurality of divided magnets 8 to the divided magnet mounting portions. solved by magnetron sputtering device.
本マグネトロンスパツタ装置は、分割マグネツ
ト取付部に選択的に分割マグネツト８を取付ける
ことにより分割マグネツト８の配設位置を変更可
能なようになつているので、マグネツト４ａの磁
界分布の調整が可能である。
This magnetron sputtering device is designed so that the installation position of the divided magnet 8 can be changed by selectively attaching the divided magnet 8 to the divided magnet mounting portion, so that the magnetic field distribution of the magnet 4a can be adjusted. be.
従つて、先に述べたスパツタする金属の相違や
パワーの変更などの際に発生する膜厚分布ないし
ステツプカバレージの変化に対して上記磁界分布
の調整を行うことにより、それぞれの場合に所望
のスパツタ膜を得ることが出来て、従来より製造
品質を向上させることが可能になる。 Therefore, by adjusting the above-mentioned magnetic field distribution in response to changes in the film thickness distribution or step coverage that occur when the sputtering metal is different or the power is changed, the desired sputtering can be achieved in each case. It is possible to obtain a film, and it becomes possible to improve the manufacturing quality compared to the conventional method.
以下第１図ａ，ｂ、第２図および分割マグネツ
ト８の例を示す第３図ａ，ｂを用い実施例につい
て説明する。
Embodiments will be described below with reference to FIGS. 1A and 2B, FIG. 2, and FIGS. 3A and 3B showing an example of the divided magnet 8.
第１図は第４図に対応する図であり、第１図に
示すマグネトロンスパツタ装置は、第４図に従来
例のマグネツト４を４ａに変更しそれに伴いマグ
ネツト取付板５を５ａに変更したもので、その他
は従来のままである。 FIG. 1 is a diagram corresponding to FIG. 4, and the magnetron sputtering device shown in FIG. Everything else remains the same.
マグネツト４ａは、マグネツト取付板５ａに取
付けられた複数の分割マグネツト８で構成され、
分割マグネツト８は、第１図ｂと第２図の比較で
示される如く配設位置が変えられるようになつて
いる。 The magnet 4a is composed of a plurality of divided magnets 8 attached to a magnet mounting plate 5a,
The position of the divided magnet 8 can be changed as shown in a comparison between FIG. 1b and FIG. 2.
そして、個々の分割マグネツト８は、第３図ａ
またはｂ図示の構造をなしている。 The individual divided magnets 8 are shown in FIG. 3a.
or b has the structure shown in the diagram.
即ち、第３図ａに示す分割マグネツト８は、二
つのマグネツト素子８ａの一方がＮ極面を他方が
Ｓ極面を上に向けるように磁性体例えば鉄のヨー
ク８ｂに固定されてなり、ヨーク８ｂがマグネツ
ト取付板５ａにねじ止めされる。 That is, the split magnet 8 shown in FIG. 3a is constructed by fixing two magnet elements 8a to a yoke 8b made of a magnetic material, for example, iron, with one of the two magnet elements 8a facing upward with its N-pole surface and the other with its S-pole surface facing upward. 8b is screwed to the magnet mounting plate 5a.
また、第３図ｂに示す分割マグネツト８は、一
つのマグネツト素子８ｃがＮおよびＳ極面を左右
に向けるように非磁性体例えば黄銅の台ブロツク
８ｄに固定されてなり、台ブロツク８ｄがマグネ
ツト取付板５ａにねじ止めされる。 In addition, the divided magnet 8 shown in FIG. 3b has one magnetic element 8c fixed to a base block 8d made of a non-magnetic material, such as brass, with the N and S pole faces facing left and right, and the base block 8d is a magnet. It is screwed to the mounting plate 5a.
ここでマグネツト素子８ａ，８ｃには例えばサ
マリウムコバルト系などの強力な磁石材料が使用
されて、マグネツト４ａを構成した際に十分な磁
界強度が確保出来るようになつている。 Here, a strong magnetic material such as samarium cobalt is used for the magnetic elements 8a and 8c, so that sufficient magnetic field strength can be ensured when the magnet 4a is constructed.
そしてマグネツト取付板５ａには、分割マグネ
ツト８を取付けるための分割マグネツト取付部と
して図示されないねじ止め用孔が予め多数設けら
れてあり、分割マグネツト８の取付け位置は、そ
の孔の選択により変更することが出来るようにな
つている。 The magnet mounting plate 5a has a large number of screw holes (not shown) provided in advance as split magnet mounting portions for mounting the split magnet 8, and the mounting position of the split magnet 8 can be changed by selecting the holes. It is becoming possible to do this.
従つて、ターゲツト２に及ぶマグネツト４ａの
磁界分布は、分割マグネツト８の取付け位置の変
更により調整することが出来る。 Therefore, the magnetic field distribution of the magnet 4a over the target 2 can be adjusted by changing the mounting position of the divided magnet 8.
以上説明したように、本発明の構成によれば、
マグネトロンスパツタ装置において、スパツタ膜
の膜厚分布を支配するマグネツトの磁界分布の調
整が可能になり、スパツタする金属の相違やパワ
ーの変更があつても所望のスパツタ膜を得ること
が出来て、製造品質の向上を可能にさせる効果が
ある。
As explained above, according to the configuration of the present invention,
In magnetron sputtering equipment, it is now possible to adjust the magnetic field distribution of the magnet that controls the film thickness distribution of the sputtered film, and even if the sputtered metal is different or the power is changed, the desired sputtered film can be obtained. This has the effect of making it possible to improve manufacturing quality.
第１図は本発明によるマグネトロンスパツタ装
置実施例の要部構成を示す側断面図ａとそのマグ
ネツト部分の正面図ｂ、第２図はその実施例にお
ける分割マグネツトの配置位置を変えた例を示す
マグネツト部分の正面図、第３図はそのマグネツ
トを構成する分割マグネツトの例を示す斜視図
ａ，ｂ、第４図は従来のマグネトロンスパツタ装
置例の要部構成を示す側断面図ａとそのマグネツ
ト部分の正面図ｂ、である。
図において、１は真空チヤンバ、２はターゲツ
ト、３はバツキングプレート、４，４ａはマグネ
ツト、５，５ａはマグネツト取付板、６はウエー
ハ、６ａは被着面、７ａはリング状マグネツト、
７ｂは柱状マグネツト、８は分割マグネツト、８
ａ，８ｃはマグネツト素子、８ｂはヨーク、８ｄ
は台ブロツク、である。
Fig. 1 is a side sectional view (a) showing the main structure of a magnetron sputter device according to an embodiment of the present invention, and a front view (b) of the magnet portion thereof, and Fig. 2 is an example in which the arrangement position of the divided magnets in the embodiment has been changed. FIG. 3 is a front view of the magnet part shown in FIG. It is a front view b of the magnet part. In the figure, 1 is a vacuum chamber, 2 is a target, 3 is a backing plate, 4 and 4a are magnets, 5 and 5a are magnet mounting plates, 6 is a wafer, 6a is an adherend surface, 7a is a ring-shaped magnet,
7b is a columnar magnet, 8 is a split magnet, 8
a, 8c are magnetic elements, 8b is a yoke, 8d
is a stand block.
Claims (1)
が複数の分割マグネツト８で構成され、 該マグネツト４ａを取付けるマグネツト取付板
５ａに該分割マグネツト８を取付ける分割マグネ
ツト取付部を複数設け、 該複数設けられた分割マグネツト取付部に選択
的に該複数の分割マグネツト８を取付けることに
より該マグネツト取付板５ａ上における該複数の
分割マグネツト８の配設位置が可変にされている
ことを特徴とするマグネトロンスパツタ装置。[Claims] 1. Magnet 4a that exerts a magnetic field on target 2
is composed of a plurality of split magnets 8, a plurality of split magnet mounting portions for mounting the split magnets 8 are provided on the magnet mounting plate 5a to which the magnet 4a is mounted, and the plurality of split magnet mounting portions are selectively attached to the plurality of split magnet mounting portions. A magnetron sputtering device characterized in that the positions of the plurality of divided magnets 8 on the magnet mounting plate 5a are made variable by attaching the divided magnets 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13252685A JPS61291972A (en) | 1985-06-18 | 1985-06-18 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13252685A JPS61291972A (en) | 1985-06-18 | 1985-06-18 | Magnetron sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61291972A JPS61291972A (en) | 1986-12-22 |
| JPH0243825B2 true JPH0243825B2 (en) | 1990-10-01 |
Family
ID=15083357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13252685A Granted JPS61291972A (en) | 1985-06-18 | 1985-06-18 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61291972A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4680353B2 (en) * | 1999-07-06 | 2011-05-11 | アプライド マテリアルズ インコーポレイテッド | Sputtering apparatus and film forming method |
| JP4680352B2 (en) * | 1999-07-06 | 2011-05-11 | アプライド マテリアルズ インコーポレイテッド | Sputtering apparatus and film forming method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60116774A (en) * | 1983-11-30 | 1985-06-24 | Nippon Texas Instr Kk | Sputtering device |
-
1985
- 1985-06-18 JP JP13252685A patent/JPS61291972A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60116774A (en) * | 1983-11-30 | 1985-06-24 | Nippon Texas Instr Kk | Sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61291972A (en) | 1986-12-22 |
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