JPH0239501A - Manufacture of nonlinear resistor depending on voltage - Google Patents
Manufacture of nonlinear resistor depending on voltageInfo
- Publication number
- JPH0239501A JPH0239501A JP63188290A JP18829088A JPH0239501A JP H0239501 A JPH0239501 A JP H0239501A JP 63188290 A JP63188290 A JP 63188290A JP 18829088 A JP18829088 A JP 18829088A JP H0239501 A JPH0239501 A JP H0239501A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- heat treatment
- voltage
- gas
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 12
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 230000001419 dependent effect Effects 0.000 claims description 16
- 238000010304 firing Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 5
- 239000002075 main ingredient Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 230000002829 reductive effect Effects 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、電圧依存非直線抵抗体の製造方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing a voltage-dependent nonlinear resistor.
（従来の技術）
従来、この種の非直線抵抗体の製造方法としては、チタ
ン酸ストロンチウム（５ｒＴＩ０３ ）を主成分とした
原料を湿式混合し、これにバインダーを添加して所望形
状の成形体に成形し、該成形体を窒素ガスと水素ガスか
ら成る混合ガス等の還元性ガス雰囲気中で温度１３００
〜１４５０℃で焼成した後、更に焼結体に空気中で温度
８００〜１２００℃の熱処理を施し、該焼結体に酸素を
拡散させる方法、或いは、前記方法において、焼成して
得られた焼結体に直ちに熱処理を施す代わりに、該焼結
体の表面にＮａ系ガラスを塗布し、続いて該焼結体に空
気中で温度８００〜１２００℃の熱処理を施し、該焼結
体にＮａ系ガラスを拡散させる方法が知られている。(Prior Art) Conventionally, as a manufacturing method for this type of non-linear resistor, raw materials mainly composed of strontium titanate (5rTI03) are wet-mixed, a binder is added to this, and a molded body of a desired shape is formed. The molded body is heated at a temperature of 1300 in an atmosphere of a reducing gas such as a mixed gas of nitrogen gas and hydrogen gas.
After firing at ~1450°C, the sintered body is further heat treated in air at a temperature of 800~1200°C to diffuse oxygen into the sintered body, or the sintered body obtained by firing in the above method Instead of immediately heat-treating the sintered body, the surface of the sintered body is coated with Na-based glass, and then the sintered body is heat-treated in air at a temperature of 800 to 1200°C. A method of diffusing glass is known.
このようにして得られた電圧依存非直線抵抗体いわゆる
バリスタは大きな静電容量を有するので、電子機器等を
言などのサージ、誘導性パルス、ノイズ等から保護する
部品として多用されている。The thus obtained voltage-dependent nonlinear resistor, so-called varistor, has a large capacitance and is therefore frequently used as a component for protecting electronic equipment and the like from electrical surges, inductive pulses, noise, and the like.
（発明が解決しようとする課題）
前記製造方法はいずれの場合も、焼成時の結晶粒成長に
伴って不純物成分が周囲に排斥され、焼結体の表面部分
に内部に比してケイ酸系ガラス質が多く存在する。(Problems to be Solved by the Invention) In any of the above manufacturing methods, impurity components are excluded to the surroundings as the crystal grains grow during firing, and the surface portion of the sintered body has a silicic acid-based content compared to the inside. There is a lot of glass.
その結果、前記製造方法のうち前者の場合、その後の焼
結体への熱処理時にケイ酸系ガラス質が多い表面部分と
該ガラス質の少ない内部とでは熱処理時の酸素拡散速度
が異なるので、得られた電圧依存非直線抵抗体のセラミ
ック索体内抵抗バラツキが発生し、電気的特性の信頼性
劣化が生じるという問題がある。As a result, in the case of the former manufacturing method, during the subsequent heat treatment of the sintered body, the oxygen diffusion rate at the time of heat treatment is different between the surface portion where there is a lot of silicic acid-based glass and the interior where there is little glass, There is a problem in that resistance variations within the ceramic cord of the voltage-dependent nonlinear resistor occur, resulting in deterioration in reliability of electrical characteristics.
また後者の場合、その後の焼結体の表面にＮａ系ガラス
を塗布し、熱処理時にケイ酸系ガラス質が多い表面部分
と該ガラス質の少ない内部とではＮａの拡散が均一に行
われないので、得られた電圧依存非直線抵抗体のセラミ
ック素体内抵抗バラツキが発生し、電気的特性の信頼性
劣化が生じるという間通がある。In the latter case, Na-based glass is applied to the surface of the sintered body after that, and during heat treatment, Na does not diffuse uniformly between the surface area where there is a lot of silicate-based glass and the interior where there is less glass. However, there is a common problem that variations in resistance within the ceramic element of the obtained voltage-dependent nonlinear resistor occur, resulting in deterioration in reliability of electrical characteristics.
本発明は、前記問題点を解消し、電気的特性の信頼性劣
化の生じることのない電圧依存非直線抵抗体を製造する
ことが出来る方法を提供することをその目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a voltage-dependent nonlinear resistor that eliminates the above-mentioned problems and does not cause reliability deterioration of electrical characteristics.
（課題を解決するための手段）
本発明の第１の発明は、酸素拡散型の電圧依存非直線抵
抗体の製造方法に関するもので、チタン酸ストロンチウ
ムを主成分とする原料粉末を所望形状の成形体に形成し
、該成形体を還元性ガス雰囲気中で焼成して焼結体を作
成し、該焼結体の表面を研磨し、該研磨済焼結体に酸化
雰囲気中で熱処理を施すことを特徴とする。(Means for Solving the Problems) The first invention of the present invention relates to a method for manufacturing an oxygen diffusion type voltage-dependent nonlinear resistor, in which a raw material powder containing strontium titanate as a main component is molded into a desired shape. forming a sintered body into a body, firing the molded body in a reducing gas atmosphere to create a sintered body, polishing the surface of the sintered body, and subjecting the polished sintered body to heat treatment in an oxidizing atmosphere. It is characterized by
また第２の発明は、Ｎａ拡散型の電圧依存非直線抵抗体
の製造方法に関するもので、チタン酸ストロンチウムを
主成分とする原料粉末を所望形状の成形体に形成し、該
成形体を還元性ガス雰囲気中で焼成して焼結体を作成し
、該焼結体の表面を研磨し、該研磨済焼結体の表面にＮ
ａ系ガラスを被覆して酸化雰囲気中で熱処理を施すこと
を特徴とする。The second invention relates to a method for manufacturing a Na-diffused voltage-dependent nonlinear resistor, in which a raw material powder containing strontium titanate as a main component is formed into a molded body of a desired shape, and the molded body is A sintered body is created by firing in a gas atmosphere, the surface of the sintered body is polished, and N is added to the surface of the polished sintered body.
It is characterized by coating A-type glass and subjecting it to heat treatment in an oxidizing atmosphere.
本発明で主成分とするチタン酸ストロンチウムに添加す
る添加物としては、ν０３ 、 Ｎｂ２Ｏ５゜Ｌａ２Ｏ
３＋ ＣｅＯ２ｒ Ｎｄ ２０３ ＋ Ｙ２０３ｒ Ｓ
ｓ ２０３＋ Ｄｙ２０ｉ 。The additives added to strontium titanate, which is the main component in the present invention, include ν03, Nb2O5゜La2O
3+ CeO2r Nd 203 + Y203r S
s203+ Dy20i.
Ａｇ２Ｏ、ＣｕＯ、ＭｎＯ２のうち少なくとも１種類と
、５ｉ０２． Ａｌ２Ｏ３のうち少なくとも１種類が用
いられ、そしてチタン酸ストロンチウム １００モル部
に対する添加量は夫々一般には０．Ｏ１〜５．０モル部
および０．０３〜１，５モル部程度とする。At least one of Ag2O, CuO, and MnO2, and 5i02. At least one of Al2O3 is used, and the amount of each added per 100 mole parts of strontium titanate is generally 0. The O content is approximately 1 to 5.0 mol parts and 0.03 to 1.5 mol parts.
またバインダとしては、ポリビニルアルコール等が用い
られ、そしてチタン酸ストロンチウム１００重量部に対
する添加量は一般には１〜１０重量部程度とする。As the binder, polyvinyl alcohol or the like is used, and the amount added is generally about 1 to 10 parts by weight per 100 parts by weight of strontium titanate.
またＮａ系ガラスとしては、ＮａＣｏ５ 、ＮａＦ等の
Ｎａ化合物に、エチルセルロース、ニトロセルロース等
の有機溶剤を添加し、混練したものが挙げられ、該有機
溶剤を用いたときの添加量は、Ｎａ化合物１００重量部
に対し°て一般には１０〜２００重量部程度とする。Examples of Na-based glass include those obtained by adding and kneading Na compounds such as NaCo5 and NaF with organic solvents such as ethyl cellulose and nitrocellulose. The amount is generally about 10 to 200 parts by weight.
尚前記Ｎａ系ガラスに泡が発生しその泡によってＮａ系
ガラスの欠如する部分が生じるのを防止するために、有
機溶剤を添加し、混練する際例えばイソプロピルアルコ
ールのような消泡剤を添加してもよく、その場合の添加
量はＮａ化合物１００重量部に対して一般には０，１〜
５重量部程度とする。In addition, in order to prevent bubbles from forming in the Na-based glass and resulting in areas where the Na-based glass is missing, an organic solvent is added and an antifoaming agent such as isopropyl alcohol is added during kneading. In that case, the amount added is generally 0.1 to 100 parts by weight of the Na compound.
The amount should be about 5 parts by weight.
また成形体を還元性ガス雰囲気中で焼成する際のガスと
しては例えば窒素ガスと水素ガスの混合ガスを用い、該
混合ガス中の窒素ガスと水素ガスの比率は９５〜９９容
量％：５〜ｌ容瓜％とし、また温度は１３００℃〜１４
５０℃程度とする。Further, as the gas when firing the compact in a reducing gas atmosphere, for example, a mixed gas of nitrogen gas and hydrogen gas is used, and the ratio of nitrogen gas and hydrogen gas in the mixed gas is 95-99% by volume: 5-99%. 1 volume of melon%, and the temperature is 1300℃~14
The temperature should be approximately 50°C.
また焼結体の表面研磨は酸素またはＮａの均一な拡散を
考慮すれば焼結体の上下の各表面に施すようにする。In addition, the surface polishing of the sintered body should be performed on each of the upper and lower surfaces of the sintered body in consideration of uniform diffusion of oxygen or Na.
また焼結体を酸化雰囲気中で熱処理する際の雰囲気とし
ては例えば空気を用い、また熱処理温度は９５０℃〜１
２００℃程度とする。In addition, when the sintered body is heat treated in an oxidizing atmosphere, air is used as the atmosphere, and the heat treatment temperature is 950°C to 100°C.
The temperature should be approximately 200°C.
（作 用）
焼結体の表面部分のケイ酸系ガラス質の多い層が研磨に
よって除去される。そして研磨された焼結体を酸化雰囲
気中で熱処理を施すことによって、酸素が焼結体中に均
一に拡散される。(Function) The layer containing a large amount of silicic acid glass on the surface of the sintered body is removed by polishing. Then, by subjecting the polished sintered body to heat treatment in an oxidizing atmosphere, oxygen is uniformly diffused into the sintered body.
また研磨された焼結体の表面にＮａ系ガラスを被覆した
後、該焼結体に酸化雰囲気中で熱処理を施すことによっ
て、Ｎａが焼結体中に均一に拡散される。Further, after coating the surface of the polished sintered body with Na-based glass, the sintered body is heat-treated in an oxidizing atmosphere, so that Na is uniformly diffused into the sintered body.
（実施例） 次に本発明の具体的実施例を比較例と共に説明する。(Example) Next, specific examples of the present invention will be described together with comparative examples.
実施例１
チタン酸ストロンチウム５ｒＴＩ０３粉末１００モル部
にＮｂ２ｏ５を０，０２モル部、５ＩＯ２を１．０モル
部、ＡＪ１２０３を０．１モル部夫々添加し、水を加え
てボールミルで１５時間混合した後、脱水乾燥し２、更
にバインダとしてポリビニルアルコールを１５重量部添
加し、混合、造粒して原料粉末を作成した。Example 1 0.02 mole part of Nb2o5, 1.0 mole part of 5IO2, and 0.1 mole part of AJ1203 were added to 100 mole parts of strontium titanate 5rTI03 powder, water was added, and the mixture was mixed in a ball mill for 15 hours. , dehydrated and dried 2, and further added 15 parts by weight of polyvinyl alcohol as a binder, mixed and granulated to prepare a raw material powder.
更にこの原料粉末を乾式プレスで金型を用い１５００）
ｃｇ／ｃｄの圧力で成型して直径１１ ｍｍ厚さ１．５
ｍｕｍの成形体を形成した。Furthermore, this raw material powder is dry pressed using a mold (1500)
Molded with cg/cd pressure, diameter 11 mm, thickness 1.5
A molded body of mum was formed.
続いてこの成形体を窒素ガス９５容量％と水素ガス５容
量％とから成る混合ガス雰囲気中で温度１４００℃で３
時間焼成して、直径９．０＋ａｍ厚さ１゜２ＩＩＩ１１
の半導体セラミックスから成る焼結体を作成した。Subsequently, this compact was heated at a temperature of 1400°C for 3 hours in a mixed gas atmosphere consisting of 95% by volume of nitrogen gas and 5% by volume of hydrogen gas.
Fired for an hour, diameter 9.0+am thickness 1゜2III11
A sintered body made of semiconductor ceramics was created.
続いて第１図示のようにラップ盤を用いて焼結体（１）
の上下の各表面を夫々０．２ｍｍづつ研磨して直径９．
０ ｍ■厚さ０．８關の研磨済焼結体（２）を得た。尚
図面で（３）は研磨部分を示す。Next, as shown in the first diagram, the sintered body (1) is made using a lapping machine.
Polish the upper and lower surfaces of each 0.2 mm each to a diameter of 9.
A polished sintered body (2) having a thickness of 0.8 m and 0.8 m was obtained. In the drawing, (3) indicates the polished portion.
続いて研磨済焼結体（２）に空気中で温度１１００℃、
３時間の熱処理を施して１０ツト １００個の電圧依存
非直線抵抗体を作成した。Subsequently, the polished sintered body (2) was heated at a temperature of 1100°C in air.
A heat treatment was performed for 3 hours to produce 100 voltage-dependent nonlinear resistors.
次に第２図示のように上記方法で作成した各電圧依存非
直線抵抗体（４）の上下の各表面に銀電極（５）を温度
８００℃で焼付は形成し、これを試料１とした。Next, as shown in the second diagram, silver electrodes (5) were baked at a temperature of 800°C on the upper and lower surfaces of each voltage-dependent nonlinear resistor (4) created by the above method, and this was designated as sample 1. .
上記方法で作成された１０ット１００個の試料１の電気
的特性としてバリスタ電圧の変化率、静電容量の変化率
を調べたところ、表に示す結果が得られた。When the rate of change in varistor voltage and the rate of change in capacitance were investigated as electrical characteristics of 100 samples 1 of 10 t produced by the above method, the results shown in the table were obtained.
尚電気的特性の測定は高温負荷寿命試験法に準じて、温
度８５℃でＤＣ４０Ｖを連続１０００時間印加し・常温
・常温中にて１２時間放置後行った。The electrical characteristics were measured in accordance with the high temperature load life test method by continuously applying DC 40V at a temperature of 85° C. for 1000 hours, and after leaving the sample at room temperature for 12 hours.
またバリスタ電圧（ｖ＋、ｍ）の変化率（％）は次式に
より求めた。Further, the rate of change (%) of the varistor voltage (v+, m) was determined using the following formula.
また静電容量（ＣｒｐＦＪ）の変化率（％）は次式によ
り求めた。Further, the rate of change (%) in capacitance (CrpFJ) was determined by the following formula.
比較例１
焼成して得られた焼結体の上下の各表面に研磨処理を施
さずに直ちに熱処理を施した以外は実施例１と同一方法
で試料を作成し、これを試料２とした。Comparative Example 1 A sample was prepared in the same manner as in Example 1, except that the upper and lower surfaces of the sintered body obtained by firing were immediately heat-treated without polishing, and this was designated as Sample 2.
そして試料１と同一方法で試料２の電気的特性を調べた
ところ、表に示す結果が得られた。When the electrical characteristics of Sample 2 were examined in the same manner as Sample 1, the results shown in the table were obtained.
実施例２
研磨済焼結体（２）の上下の各表面に下記方法により作
成したＮａ系ガラスのペーストを１．０ ｆｆｌｆｆｉ
部塗布し、酸化雰囲気中で温度２５０℃で０．５時間乾
燥し、続いてＮａ系ガラスが被覆された焼結体に空気中
で温度１１００℃、３時間の熱処理を施した以外は実施
例１と同一方法で試料を作成し、これを試料３とした。Example 2 1.0 fflffi of Na-based glass paste prepared by the following method was applied to each of the upper and lower surfaces of the polished sintered body (2).
Examples except that the sintered body coated with Na-based glass was heat-treated in air at 1100°C for 3 hours. A sample was prepared in the same manner as in Example 1 and designated as Sample 3.
そして試料１と同一方法で試料３の電気的特性を調べた
ところ、表に示す結果が得られた。When the electrical characteristics of Sample 3 were examined in the same manner as Sample 1, the results shown in the table were obtained.
尚、Ｎａ系ガラスのペーストの作成は次の通りとした。Note that the Na-based glass paste was prepared as follows.
まず下記配合から成る混合物を調整した。First, a mixture consisting of the following formulation was prepared.
ＮａＣｏ、 １．００重量部イソ
プロピルアルコール １重量部次にこの調整された
混合物を播潰機で温度２０℃で１５時間混練してペース
トを作成した。NaCo, 1.00 parts by weight Isopropyl alcohol 1 part by weight Next, this prepared mixture was kneaded with a crusher at a temperature of 20° C. for 15 hours to prepare a paste.
比較例２
焼成して得られた焼結体の上下の各表面に研磨処理を施
さずに直ちに実施例２と同一のＮａ系ガラスのペースト
を塗布し、その後熱処理を施した以外は実施例１と同一
方法で試料を作成し、これを試料４とした。Comparative Example 2 Example 1 except that the same Na-based glass paste as in Example 2 was immediately applied to the upper and lower surfaces of the sintered body obtained by firing without polishing, and then heat treatment was performed. A sample was prepared in the same manner as described above, and this was designated as sample 4.
そして試料１と同一方法で試料４の電気的特性を調べた
ところ、表に示す結果が得られた。When the electrical characteristics of Sample 4 were examined in the same manner as Sample 1, the results shown in the table were obtained.
表
表から明らかなように、焼結体の表面を研磨した後に熱
処理を施す本発明の実施例１の方法、および焼結体の表
面を研磨した後にＮａ系ガラスを被覆して熱処理を施す
本発明の実施例２の方法によって得られた電圧依存非直
線抵抗体のバリスタ電圧および静電容量の変化率は極め
て小さかった。As is clear from the table, there is a method according to Example 1 of the present invention in which the surface of the sintered body is polished and then heat treated, and a method in which the surface of the sintered body is polished and then coated with Na-based glass and heat treated. The rate of change in varistor voltage and capacitance of the voltage-dependent nonlinear resistor obtained by the method of Example 2 of the invention was extremely small.
これに対して焼結体の表面を研磨することなく直ちに熱
処理を施す比較例１の方法、および焼結体の表面を研磨
することなく直ちに焼結体表面にＮａ系ガラスを被覆し
て熱処理を施す比較例２の方法によって得られた電圧依
存非直線抵抗体のバリスタ電圧および静電容量の変化率
は大きかった。On the other hand, the method of Comparative Example 1 in which the surface of the sintered body is immediately heat-treated without polishing it, and the method of Comparative Example 1 in which the surface of the sintered body is immediately coated with Na-based glass without polishing the surface of the sintered body and then heat-treated is performed. The rate of change in varistor voltage and capacitance of the voltage-dependent nonlinear resistor obtained by the method of Comparative Example 2 was large.
（発明の効果）
このように本発明によるときは、焼成された焼結体の表
面を研磨するようにしたので、焼結体の表面部分のケイ
酸系ガラス質の多い層を除去することが出来、そして研
磨された焼結体に酸化雰囲気中で熱処理を施すようにし
たので、酸素を焼結体中に均一に拡散することが出来、
また研磨された焼結体の表面にＮａ系ガラスを被覆した
後、該焼結体に酸化雰囲気中で熱処理を施すようにした
ので、Ｎａを焼結体中に均一に拡散することが出来るた
め、セラミック素体内抵抗バラツキが極めて少ない電圧
依存非直線抵抗体を容易に製造することが出来る等の効
果を存する。(Effects of the Invention) According to the present invention, since the surface of the fired sintered body is polished, it is possible to remove the layer containing a lot of silicate-based glass on the surface of the sintered body. Since the finished and polished sintered body is heat treated in an oxidizing atmosphere, oxygen can be uniformly diffused into the sintered body.
In addition, after coating the surface of the polished sintered body with Na-based glass, the sintered body is heat-treated in an oxidizing atmosphere, so that Na can be uniformly diffused into the sintered body. This method has the advantage that it is possible to easily manufacture a voltage-dependent nonlinear resistor with extremely small resistance variations within the ceramic element.
第１図は本発明の製造方法における焼結体の表面の研磨
工程の説明図、第２図は上下両面に銀電極を形成した電
圧依存非直線抵抗体を示し、（Ａ）はその平面図、（Ｂ
）はその側面図である。
（１）・・・・・・焼 結 体
（２）・・・・・・研磨済焼結体
（４）・・・・・・電圧依存非直線抵抗体第１図
づ）
夛
第２図
（Ａ）
ゝ３FIG. 1 is an explanatory diagram of the polishing step of the surface of a sintered body in the manufacturing method of the present invention, FIG. 2 shows a voltage-dependent nonlinear resistor with silver electrodes formed on both upper and lower surfaces, and (A) is a plan view thereof. , (B
) is its side view. (1)...Sintered body (2)...Polished sintered body (4)...Voltage-dependent nonlinear resistor (Figure 1) Figure 2 (A) ゝ3
Claims (2)
所望形状の成形体に形成し、該成形体を還元性ガス雰囲
気中で焼成して焼結体を作成し、該焼結体の表面を研磨
し、該研磨済焼結体に酸化雰囲気中で熱処理を施すこと
を特徴とする電圧依存非直線抵抗体の製造方法。1. forming a raw material powder containing strontium titanate as a main component into a molded body of a desired shape, firing the molded body in a reducing gas atmosphere to create a sintered body, polishing the surface of the sintered body, A method for manufacturing a voltage-dependent nonlinear resistor, comprising subjecting the polished sintered body to heat treatment in an oxidizing atmosphere.
所望形状の成形体に形成し、該成形体を還元性ガス雰囲
気中で焼成して焼結体を作成し、該焼結体の表面を研磨
し、該研磨済焼結体の表面にＮａ系ガラスを被覆して酸
化雰囲気中で熱処理を施すことを特徴とする電圧依存非
直線抵抗体の製造方法。2. forming a raw material powder containing strontium titanate as a main component into a molded body of a desired shape, firing the molded body in a reducing gas atmosphere to create a sintered body, polishing the surface of the sintered body, A method for manufacturing a voltage-dependent nonlinear resistor, which comprises coating the surface of the polished sintered body with Na-based glass and subjecting it to heat treatment in an oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63188290A JP2520699B2 (en) | 1988-07-29 | 1988-07-29 | Method of manufacturing voltage-dependent nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63188290A JP2520699B2 (en) | 1988-07-29 | 1988-07-29 | Method of manufacturing voltage-dependent nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0239501A true JPH0239501A (en) | 1990-02-08 |
| JP2520699B2 JP2520699B2 (en) | 1996-07-31 |
Family
ID=16221041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63188290A Expired - Fee Related JP2520699B2 (en) | 1988-07-29 | 1988-07-29 | Method of manufacturing voltage-dependent nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2520699B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609102A (en) * | 1983-06-28 | 1985-01-18 | 松下電器産業株式会社 | Voltage depending nonlinear resistor porcelain composition |
| JPS60165710A (en) * | 1984-02-07 | 1985-08-28 | 株式会社村田製作所 | Multifunction element |
| JPS60170903A (en) * | 1984-02-16 | 1985-09-04 | 太陽誘電株式会社 | Porcelain composition having voltage dependent nonlinear resistance characteristic |
| JPS6146003A (en) * | 1984-08-10 | 1986-03-06 | 松下電器産業株式会社 | Composite function element |
-
1988
- 1988-07-29 JP JP63188290A patent/JP2520699B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609102A (en) * | 1983-06-28 | 1985-01-18 | 松下電器産業株式会社 | Voltage depending nonlinear resistor porcelain composition |
| JPS60165710A (en) * | 1984-02-07 | 1985-08-28 | 株式会社村田製作所 | Multifunction element |
| JPS60170903A (en) * | 1984-02-16 | 1985-09-04 | 太陽誘電株式会社 | Porcelain composition having voltage dependent nonlinear resistance characteristic |
| JPS6146003A (en) * | 1984-08-10 | 1986-03-06 | 松下電器産業株式会社 | Composite function element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2520699B2 (en) | 1996-07-31 |
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