JPH02377A - 光電変換装置 - Google Patents
光電変換装置Info
- Publication number
- JPH02377A JPH02377A JP63202533A JP20253388A JPH02377A JP H02377 A JPH02377 A JP H02377A JP 63202533 A JP63202533 A JP 63202533A JP 20253388 A JP20253388 A JP 20253388A JP H02377 A JPH02377 A JP H02377A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- type region
- substrate
- photoelectric conversion
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 230000005684 electric field Effects 0.000 abstract description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002019 doping agent Substances 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63202533A JPH02377A (ja) | 1988-08-12 | 1988-08-12 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63202533A JPH02377A (ja) | 1988-08-12 | 1988-08-12 | 光電変換装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17147879A Division JPS5696879A (en) | 1979-12-30 | 1979-12-30 | Manufacture of photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02377A true JPH02377A (ja) | 1990-01-05 |
| JPH0559590B2 JPH0559590B2 (enrdf_load_stackoverflow) | 1993-08-31 |
Family
ID=16459074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63202533A Granted JPH02377A (ja) | 1988-08-12 | 1988-08-12 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02377A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531711B2 (en) | 1997-12-26 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
| KR100788928B1 (ko) * | 2004-04-06 | 2007-12-27 | 한국생명공학연구원 | ｍｄｍ2 기능을 억제하는 펩타이드 |
| CN100366695C (zh) * | 2003-03-14 | 2008-02-06 | 株式会社槌屋 | 粘合带及其粘贴方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
| JPS5477088A (en) * | 1977-12-01 | 1979-06-20 | Toshiba Corp | Semiconductor photo detector |
-
1988
- 1988-08-12 JP JP63202533A patent/JPH02377A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
| JPS5477088A (en) * | 1977-12-01 | 1979-06-20 | Toshiba Corp | Semiconductor photo detector |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531711B2 (en) | 1997-12-26 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
| CN100366695C (zh) * | 2003-03-14 | 2008-02-06 | 株式会社槌屋 | 粘合带及其粘贴方法 |
| KR100788928B1 (ko) * | 2004-04-06 | 2007-12-27 | 한국생명공학연구원 | ｍｄｍ2 기능을 억제하는 펩타이드 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0559590B2 (enrdf_load_stackoverflow) | 1993-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5356488A (en) | Solar cell and method for its manufacture | |
| US6333457B1 (en) | Edge passivated silicon solar/photo cell and method of manufacture | |
| CN1217420C (zh) | 光电元件的制造方法及光电组件 | |
| US4886555A (en) | Solar cell | |
| US5053083A (en) | Bilevel contact solar cells | |
| US4070689A (en) | Semiconductor solar energy device | |
| US20100229928A1 (en) | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element | |
| US6461947B1 (en) | Photovoltaic device and making of the same | |
| US20110023956A1 (en) | Rear-contact solar cell having extensive rear side emitter regions and method for producing the same | |
| US4451838A (en) | Semiconductor photoelectric conversion device | |
| CN111063760A (zh) | 一种太阳能电池的制备工艺 | |
| TW202404111A (zh) | 具有鈍化觸點的背接觸式太陽電池及製造方法 | |
| JP3193287B2 (ja) | 太陽電池 | |
| US8921686B2 (en) | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element | |
| JPH0969643A (ja) | 太陽電池及びその製造方法 | |
| JPS6322474B2 (enrdf_load_stackoverflow) | ||
| JP2661676B2 (ja) | 太陽電池 | |
| JPH02377A (ja) | 光電変換装置 | |
| JPS6231834B2 (enrdf_load_stackoverflow) | ||
| KR100995654B1 (ko) | 태양전지 및 그 제조방법 | |
| KR101024322B1 (ko) | 태양전지용 웨이퍼 제조 방법, 그 방법으로 제조된 태양전지용 웨이퍼 및 이를 이용한 태양전지 제조 방법 | |
| JP3346907B2 (ja) | 太陽電池及びその製造方法 | |
| JPH11312814A (ja) | 太陽電池素子 | |
| KR101321538B1 (ko) | 벌크형 실리콘 태양 전지 및 그 제조 방법 | |
| JPH0249030B2 (enrdf_load_stackoverflow) |