JPH0236939B2 - - Google Patents
Info
- Publication number
- JPH0236939B2 JPH0236939B2 JP59228993A JP22899384A JPH0236939B2 JP H0236939 B2 JPH0236939 B2 JP H0236939B2 JP 59228993 A JP59228993 A JP 59228993A JP 22899384 A JP22899384 A JP 22899384A JP H0236939 B2 JPH0236939 B2 JP H0236939B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- atoms
- receiving member
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
- G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59228993A JPS61109060A (ja) | 1984-11-01 | 1984-11-01 | 電子写真用光受容部材 |
AU43284/85A AU589126C (en) | 1984-06-05 | 1985-06-04 | Light-receiving member |
EP85304011A EP0165743B1 (en) | 1984-06-05 | 1985-06-05 | Light-receiving member |
CA000483204A CA1258394A (en) | 1984-06-05 | 1985-06-05 | Light-receiving member |
DE8585304011T DE3580939D1 (de) | 1984-06-05 | 1985-06-05 | Lichtempfangselement. |
US06/740,714 US4705734A (en) | 1984-06-05 | 1985-06-30 | Member having substrate with irregular surface and light receiving layer of amorphous silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59228993A JPS61109060A (ja) | 1984-11-01 | 1984-11-01 | 電子写真用光受容部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61109060A JPS61109060A (ja) | 1986-05-27 |
JPH0236939B2 true JPH0236939B2 (en, 2012) | 1990-08-21 |
Family
ID=16885081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59228993A Granted JPS61109060A (ja) | 1984-06-05 | 1984-11-01 | 電子写真用光受容部材 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61109060A (en, 2012) |
-
1984
- 1984-11-01 JP JP59228993A patent/JPS61109060A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61109060A (ja) | 1986-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0169641B1 (en) | Light-receiving member | |
US4701392A (en) | Member having light receiving layer with nonparallel interfaces and antireflection layer | |
JPH0236939B2 (en, 2012) | ||
US4705732A (en) | Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon | |
JPH0236940B2 (en, 2012) | ||
JPH0236943B2 (en, 2012) | ||
JPH0236941B2 (en, 2012) | ||
JPH0236942B2 (en, 2012) | ||
JPH0236944B2 (en, 2012) | ||
EP0161783B1 (en) | Light receiving member | |
JPH0234386B2 (en, 2012) | ||
JPH0235303B2 (en, 2012) | ||
US4705735A (en) | Member having substrate with protruding surface portions and light receiving layer with amorphous silicon matrix | |
JPH0235297B2 (en, 2012) | ||
EP0178915B1 (en) | Light-receiving member | |
JPH0235301B2 (en, 2012) | ||
JPH0234387B2 (en, 2012) | ||
JPH0234383B2 (en, 2012) | ||
JPH0690531B2 (ja) | 光受容部材 | |
JPH0235300B2 (en, 2012) | ||
JPH0234025B2 (en, 2012) | ||
JPH0234384B2 (en, 2012) | ||
JPS60213957A (ja) | 光受容部材 | |
JPH0719070B2 (ja) | 光受容部材 | |
JPH0513513B2 (en, 2012) |