JPH0235639A - Recording and reproducing device by latent charge image - Google Patents

Abstract

PURPOSE:To make a reset operation unnecessary by using a floating gate field effect transistor as a field effect transistor for detecting a voltage to generate an electrical signal corresponding to the surface potential of a latent charge image forming member. CONSTITUTION:The floating gate field effect transistors (DFfg1, DFfg2,...DFfgn) are used as the field effect transistors for detecting the voltage to generate the electrical signal corresponding to the surface potential of the latent charge image forming member by supplying the voltage generated by electrostatic induction corresponding to the surface potential of the latent charge image forming member to gate electrodes (ED1, ED2,...EDn). In such a way, it is possible to make the reset operation for solving a problem due to the gradual increment of the potential of a gate circuit based on a leakage current between the drain and the gate of the field effect transistor.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a recording/reproducing device using a charge latent image (static RLI latent image).

(Prior art) Information (fi number) is recorded by forming a charge latent image (electrostatic latent image) corresponding to an information signal to be recorded and reproduced on a charge latent image forming member. Detecting the voltage generated by electrostatic induction from the surface potential due to the charge latent image formed on the charge latent image forming member to a voltage detection electrode brought close to the surface of the latent image forming member (detected object). When attempting to reproduce the information signal recorded as described above, various conventionally known methods for detecting the surface potential of the object to be detected can be used.

However, in general, the voltage detection electrode circuit in the method of detecting the surface potential of the object to be detected has a very crystalline impedance, so an impedance conversion circuit is used to extract the voltage from the voltage detection electrode. Normally, this is done through a

The impedance conversion circuit described above may employ a MOS field effect transistor with an extremely large human resistance as an active element; however, as is well known, MOS field effect transistors are currently used. In order to prevent the gate from being destroyed due to the accumulation of static charges, protection means are applied, such as adding a protection diode to the input terminal circuit of the gate electrode.

Therefore, due to the existence of the above-mentioned protection means, leakage current occurs in the gate circuit of the MOS field effect transistor, and this leakage current charges the capacitance of the input side circuit of the gate electrode of the field effect transistor. As time passes, a phenomenon occurs in which the potential of the gate electrode gradually decreases to -b jl.

Therefore, when the operation of extracting a voltage generated by electrostatic induction corresponding to the surface potential of the object to be detected via an impedance conversion circuit using a MOS field effect transistor is performed for a relatively long time, The problem is that the detected voltage value becomes inaccurate, and if the detection time becomes longer, the output signal becomes saturated and it becomes impossible to detect the surface potential of the object to be detected. This also happens.

Therefore, in an impedance conversion circuit using a MOS type field effect transistor, the electric charge accumulated in the capacitance of the input side circuit of the gate electrode of the MOS type field effect transistor by leakage current between the drain electrode and the gate electrode is discharged. Conventionally, the input side circuit of the gate electrode of a MOS type field effect transistor has a capacitance of the input side circuit of the gate electrode of the MOS type field effect transistor. A reset means was provided for discharging the charge accumulated by the leakage current.

FIG. 21 is a block diagram of an example of the configuration of an electric signal generating device corresponding to the surface potential distribution proposed by the applicant company, which is shown to explain the problems in conventional recording and reproducing devices using charge latent images. 21, 0
is an object to be detected, EI) A is a detection head configured as shown in FIG. 22, for example,
The detection head EDA is configured so that the distance between the voltage detection electrodes EDI to EDn provided thereon and the surface of the detected object 0 can be changed between two predetermined positions set in space. ing.

In FIG. 21, the detection head EDA is a displacement drive device B.
It is connected by a movable part 5 in the GM and a connecting member 3. 4 is a center holder of the movable part 5 in the displacement drive device BGM. As the displacement drive device BGM, for example,
A displacement drive device constructed using a voice coil motor, an electrostrictive cable, or other suitable electro-mechanical conversion element is used, and the displacement drive device BCM is generated by a signal generator SG. By supplying the drive signal, the voltage detection tii pole (
EDI-EDn) in FIG. 22 is located at a predetermined position close to the surface of the detected object
As shown in the detection head EDA at the dotted line position in the figure, the voltage detection electrode in the detection head EDA (EDI in Figure 22)
-EDn) is at a predetermined position separated from the surface of the object to be detected 0, or the detection head EDA is displaced between two predetermined positions in space. Reference numeral 6 denotes a magnetic field generating section that includes a permanent magnet that applies a predetermined magnetic field to the coil of the movable section 5 in the case of the displacement drive device BGM.

Multiple voltage detection electrodes E DI.

As the detection head EDA in which El) 2... are arranged in a predetermined arrangement pattern, one having the configuration shown in FIG. 22, for example, can be used.
I, ED2. ED3-EDn are voltage detection electrodes.

The voltage detection electrodes EDI, ED2. ED3...E
Dn are connected to individual connection lines I21 . Q2. Q3...
MO5) for voltage detection by un:! Field effect transistor D Fl, D F2. A field effect transistor RF1 connected to the gate electrode of D F3-D Fn and used as a reset switching means.
, RF2. RF3...Connected to the drain electrode of the corresponding one in RFn.

Each of the field effect transistors RF1, RF2. used as the above-mentioned reset switching means. RF3...
- The gate electrodes of RFn are commonly connected to the reset pulse input terminal 2, and each field effect transistor RFI, RF2 . The source electrodes in RF3-RFn are voltage detection electrodes E DI, E during reset operation.
D2. It is commonly connected to the power source Vss that supplies the reference voltage to be applied to E D3-E Dn and the gate electrode of the MO8 type field effect transistor for voltage detection.

In addition, each of the voltage detection MO3 type field effect transistors DPI, DF2 . The drain electrodes of DF3 to DFn are commonly connected to the operating power supply V, and a constant voltage is supplied thereto.
Type 5 field effect transistors DFI, DF2. DF3・=
The source electrode of DFn.

Each individual switching field effect transistor S
Fl, S F2. It is connected to the drain electrode of the corresponding one in S F3·-3F n, and is further connected to the drain electrode of the respective switching field effect transistor S F
l, S F2. Each source electrode in S F3=S F n is connected in common to the output terminal 1. RΩ in FIG. 22 is the load resistance.

The individual switching field effect transistor S
Fl, S F2. Each gate electrode in SF3-8Fn receives switching pulses PL, P2 . P3...Pn is supplied.

Switching pulses PL, P2 . As is clear from the waveform diagram exemplified in FIG. 24, P3...Pn is the signal (a) in FIG.
) on the time axis as illustrated in (b) to (d) of FIG.
This is because they are sequentially output from the shift register SR as follows: 1→P2→P3→...

The individual switching MO8 type field effect transistors S Fl, S F2. One selected one of SF3-8Fn is sequentially turned on on the time axis.

So each separate connection @Q1. Q2. Q:I-・
- MO8 type field effect transistors for voltage detection DPI, DF2 . DF3... A plurality of voltage detection electrodes EDI connected to the gate electrode of DFn.

ED2. The voltages occurring at ED3...EDn and corresponding to the surface potentials at individual locations on the object to be detected are determined by the voltage detection MO8 type field effect transistors D Fl, D F2 . From the source side of D F3-D Fn, corresponding individual switching field effect transistors SFI, SF2 . SF3...SF
Since the switching pulses Pi, P2 . F
3... are sequentially output, the individual switching field effect transistors S Fl, S F2 . are turned on one after another. From the source side of S F3=S F n, voltages are generated at individual voltage detection electrodes EDI, EDT, ED3 and EDn by electrostatic induction corresponding to the surface potential of each of multiple locations on the object to be detected. A voltage corresponding to 1 is sent to the output terminal 1 in series on the 1-time axis.

Therefore, for example, as shown in FIG. 23, a plurality of voltage detection electrodes EDI, ED2. A plurality of voltage detection electrodes E DI of a detection head provided such that E D3-E Dn are arranged on one straight line.

ED2. ED3: When EDn is moved relative to the object to be detected in a direction perpendicular to the direction in which it is aligned, a time series corresponding to a two-dimensional charge image formed on the object to be detected. A typical electrical signal will be sent to the output terminal 1.

The detection head shown in FIG. 23 includes a plurality of voltage detection electrodes E Dl, E D2. E D3- E Dn and connection line Ql-On are connected to base B using well-known thin film technology.
This is a configuration in which P is formed.

Incidentally, in the recording/reproducing apparatus using a charge latent image illustrated in FIG. 21, the detection head EDA is placed close to the upper surface of the detected object 0.

As explained with reference to FIG. 22, the shift register SR
The switching pulse PL from P2. Individual switching field effect transistors S Fl, which are turned on one after another as P:l... are sequentially output;
SF2. From the source side of SF3-SFn.

Individual voltage detection electrodes EDI, ED2 . ED3: The voltage corresponding to the voltage generated at EDn is sent to the output terminal 1 as one block of time-series signals arranged in series on the time axis, and the voltage corresponding to the voltage generated at EDn is sent to the output terminal 1. E Di
, E D2. E D3...Input terminal 2 is input every time one block of time-series signals in which voltages corresponding to all the voltages generated at EDn are arranged in series on the time axis is obtained.
A reset pulse Pr is supplied to operate the reset switching means, and at the time the reset pulse is supplied, all voltage detection electrodes EDI, E02,
ED3... EDn potential and all voltage detection MO9
The potentials of the gate electrodes of the O9 type field effect transistors I, DF2, . . . are set to the voltage Vss of the reset power supply. This operation is repeated every time the detection head EDA and the object to be detected O are relatively moved by a predetermined distance in a predetermined manner, and an output signal corresponding to a two-dimensional charge image on the surface of the object to be detected O is obtained. In order to send out from the output terminal 1 of the detection head EDA, all the voltage detection electrodes EDI and ED2 in the detection head EDA described above must be connected to each other.
, ED3... EDn potential and all voltage detection MOs
The relative positional relationship between the detected object 0 and the detection head EDA at the time of reset with respect to the potential of the gate electrodes of the 8-type field effect transistors DPI, DF2, etc., and the charge image of the detected object O are detected by the detection head EDA. The relative positional relationship between the detected object 0 and the detection head EDA in the state of detection is as follows.

Each must be appropriate (for detailed reasons, see patent application V filed by the applicant company on May 10, 1988).
i63-113306 F (described in the specification of ``Recording and reproducing apparatus using charge latent images'').

For this purpose, the electric signal generator corresponding to the previously proposed surface potential distribution shown in FIG.

The distance between the voltage detection electrode ED in the detection head EDA and the surface of the detected object ○ is changed between two predetermined positions set in space, and the MO8 type electric field for voltage detection is A reset operation in response to an increase in the potential of the gate electrode due to a leakage current between the drain and gate in the effect transistors DFI to DFn is performed at a predetermined position of the two predetermined positions set in the space. The arrow U in FIG. 21 is for showing how the distance between the voltage detection electrode and the object to be detected 0 changes.

In the previously proposed electric signal generation device corresponding to the surface potential distribution shown in FIG. Another disadvantage is that a mechanical vibration mechanism must be used because it needs to be changed between two predetermined positions, and therefore the construction becomes bulky. , generation of vibrations and noise have become problems, and it has been desired to develop devices that do not have the above-mentioned drawbacks in the construction of recording and reproducing devices, imaging type recording and reproducing devices, and the like.

Therefore, the applicant company has developed an apparatus having the structure as shown in FIG. The voltage detection MO8 field effect transistor, in which a voltage generated by electrostatic induction is given to the gate electrode, and the voltage detection MO3 field effect transistor have capacitances in the input circuit of the voltage detection MO3 field effect transistor. In a charge latent image recording/reproducing device comprising a reset means for discharging charges accumulated by a leakage current between a drain electrode and a gate electrode of an OS type field effect transistor, a charge latent image forming member is The operation of reproducing a charge latent image from a recording/reproduction area results in a first area exhibiting a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded/reproduced, and a second area exhibiting a predetermined constant surface potential distribution. and means for causing the reset operation to be performed in a predetermined one of the first and second areas. A recording and reproducing device using charge latent images was proposed.

The principle of construction and operation of the previously proposed recording and reproducing apparatus using charge latent images will be explained with reference to FIG. 20 as follows. FIG. 20 shows the recording/reproducing area RZ of the charge latent image forming member and the detection head EDA for explaining the reproducing operation by the detection head EDA for the recording/reproducing area of the charge latent image forming member in the previously proposed recording/reproducing apparatus using the charge latent image.
FIG.

In FIG. 20, EDA is a detection head, and this detection head EDA is designed to perform main scanning in the X direction in FIG. 20 and sub-scanning in the Y direction in FIG. , the 21st detection head EDA is
The configurations already described with reference to FIGS. 22 to 24 in connection with the previously proposed device shown may be used.

In FIG. 20, RZ is an example of the recording/reproducing area in the charge latent image forming member. In the recording/reproducing area RZ of the charge latent image forming member, TR(TRI, TR2, When displaying each part without distinguishing them, as in the case of
2 (description omitted)) is a first area showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording and reproduction region RZ of the charge latent image forming member. In addition, in the recording/reproducing area RZ of the charge latent image forming member, OPI, OPl
...like 0P(OPl,,OPl...like).

If you want to display each part without distinguishing them,
The respective areas indicated by subscripts 1 and 2 are omitted are the recording/reproducing area R of the charge latent image forming member.
This is a second region exhibiting a predetermined constant surface potential distribution in Z.

In the already proposed charge latent image recording and reproducing apparatus shown in FIG. When reproducing information signals recorded as , the detection head EDA used to detect the charge image in the recording/reproducing area A first area TR showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced and a second area OP showing a predetermined constant surface potential distribution are sequentially and alternately located in the area. At the same time, when a read operation is performed in one of the predetermined regions of the first region TR and second region ○P, the read operation is performed in the other region where the read operation is not performed. is set such that a reset operation is performed.

The above point will be specifically explained as follows. That is, for example, when reading an information signal recorded as a charge image in the recording and reproducing area RZ of the charge latent image forming member, the detection head EDA detects the area TRI of @1 in the recording and reproducing area RZ of the charge latent image forming member. , TR2..., the reset operation is performed in the other area where the read operation was not performed, that is, the second area OPI, OP2... Contrary to the above case, for example, when reading out an information signal recorded as a 4D charge image in the recording and reproducing area RZ of the heavy latent image forming member, the detection head EDA When a read operation is performed in the second areas OPi, OP2, etc. in the recording and reproducing area RZ of the charge latent image forming member, the other area where the read operation was not performed, that is, the first The reset operation is performed in the regions TR1, TR2, . . . .

Then, the reading operation and resetting operation of the information signal recorded as a charge image in the recording/reproducing area RZ of the charge latent image forming member are carried out by the detection head EDA in the manner described above.
In other words, the detection head EDA detects a predetermined area in one of the first areas TRI, TR2, etc. and the second areas op1, OF2, etc. in the recording and reproducing area RZ of the charge latent image forming member. A read operation is performed, and
When the reset operation is performed in the other area where the read operation was not performed, the 21st
The information signal read operation and reset operation using a charge image are similar to the information signal read operation and reset operation using a charge image in the previously proposed device described with reference to the figures.
This can be done well without vibrating the detection head EDA.

(Problems to be Solved by the Invention) However, in the recording/reproducing device using the charge latent image of the previously proposed device explained with reference to FIG. Although it is possible to perform the information signal reading operation and resetting operation similar to the information signal reading operation and resetting operation using a charge image without vibrating the detection head EDA, the electric charge caused by the detection head EDA When reading out an image, a reset operation is required for the voltage detection field effect transistor used in the configuration of the detection head EDA to generate an electric signal corresponding to the surface potential of the charge latent image forming member. .

A reset operation is always required in conjunction with the reading operation of the information signal by the detection head EDA.
RI, TR2... and second areas OPi, OP2...
・In response to a read operation in one of the predetermined areas, a reset operation is performed in the other area where the read operation was not performed. Repetition was necessary.

(Means for Solving the Problems) The present invention provides a gate for a voltage generated by electrostatic induction in accordance with the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. A recording/reproducing device using a latent charge image, comprising a detection head including a field effect transistor for detecting voltage that generates an electric signal corresponding to the surface potential of a latent charge image forming member when applied to an electrode. , 111 A field effect transistor for voltage detection that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by electrostatic induction to the gate electrode in accordance with the surface potential of the charge latent image forming member. , a charge latent image recording and reproducing device equipped with a detection head including a floating gate field effect transistor, and a charge latent image forming device in which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. A floating gate field effect transistor is used as a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by electrostatic induction to the gate electrode according to the surface potential of the member. A recording/reproducing device using a charge latent image, which uses a transistor and is equipped with means for controlling the gate potential of the floating gate field effect transistor for voltage detection by means of an externally applied voltage, and an information signal to be recorded and reproduced. A charge latent image corresponding to the charge latent image is formed.A plurality of floating electrodes are provided for voltage detection, in which voltages generated by static flIM conduction are individually applied to gate ff electrodes in accordance with individual surface potentials at a plurality of locations of the charge latent image forming member. - A charge latent comprising a gate field effect transistor and a means for sequentially extracting the output signals of the plurality of floating gate field effect transistors so as to be arranged in series on the time axis and outputting them as time series signals. Optical image information of the object to be recorded and reproduced color-separated by an image-based recording and reproducing device and a color separation striped filter formed by repeatedly arranging a set of strips of at least three different types and electric charges corresponding to the optical image information. A plurality of floating gate field effect transistors for voltage detection in which voltages generated by electrostatic induction are individually applied to gate electrodes in accordance with individual surface potentials at a plurality of locations of a charge latent image forming member on which latent images are formed. and means for sequentially extracting the output signals of the plurality of floating gate field effect transistors so that they are arranged in series on the time axis and outputting them as time-series signals. The longitudinal direction of the recording and reproducing area formed on the charge latent image forming member corresponding to each strip in the color separation striped filter described above coincides with the direction of arrangement of the plurality of gate electrodes of the detection head. The detection head arranged in such a manner as to correspond to each strip of the color separation striped filter mentioned above is sequentially applied to each of the recording and reproducing areas formed on the charge latent image forming member. Color separation was performed using a charge latent image recording and reproducing device comprising a means for making the color separated, and a color separation striped filter formed by repeatedly arranging a set of strips each consisting of at least three different types of strips. Voltage detection in which voltages generated by electrostatic induction are individually applied to gate electrodes in response to individual surface potentials at multiple locations of a charge latent image forming member on which charge latent images corresponding to optical image information to be recorded and reproduced are formed. a plurality of floating gate field effect transistors, and means for sequentially extracting the output signals of the plurality of floating gate field effect transistors so as to be arranged in series on the time axis and outputting them as time series signals; A charge latent image recording/reproducing device comprising: a charge latent image recording/reproducing device, which has approximately a pinch in the array of recording/reproducing areas formed on the charge latent image forming member corresponding to each strip in the color separation striped filter described above; A detection head in which a plurality of gate electrodes are arranged at equal pitches is used, and the arrangement direction of the plurality of gate electrodes of the detection head is arranged relative to the longitudinal direction of each strip in the color separation striped filter. A recording/reproducing device using a charge latent image, comprising means for sub-scanning detection heads disposed in an orthogonal manner in the longitudinal direction of each strip in the color separation striped filter; The optical information to be recorded and reproduced is decomposed into at least three optical images having different wavelength ranges, and the imaging planes of the individual optical images are formed in parallel on the same plane, and the individual optical images described above are formed in parallel on the same plane. A charge latent image forming member is formed by applying a voltage generated by electrostatic induction to the gate electrode in accordance with the surface potential of the charge latent image forming member, on which a charge latent image corresponding to optical information on the image forming surface is formed. A charge latent image recording/reproducing device equipped with a detection head including a field effect transistor for voltage detection that generates an electric signal corresponding to the surface potential of the charge latent image forming member. The voltage detection field effect transistor is configured to include a floating gate field effect transistor as a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by electrostatic induction to the gate electrode. means for detecting charge images corresponding to the individual optical images having different wavelength ranges using a detection head described above, and generating individual color signals based on the output confidence of the detection head described above; and a charge latent image recording and reproducing device comprising means for recording and reproducing information signals to be recorded and reproduced, and electrostatic induction according to individual surface potentials at multiple locations of a charge latent image forming member on which charge latent images corresponding to information signals to be recorded and reproduced are formed. a plurality of floating gate field effect transistors for voltage detection, in which the voltages generated at are individually applied to the gate electrodes;

means for sequentially extracting the output signals of the plurality of floating gate field effect transistors so as to be arranged in series on the time axis and outputting them as time-series signals; The object of the present invention is to provide a charge latent image wobbling recording and reproducing device that is equipped with means for selectively controlling the gate potential of a floating gate field effect transistor for voltage detection using an externally applied voltage.

(Example) Hereinafter, the physical contents of the recording/reproducing apparatus using charge latent images of the present invention will be explained in detail with reference to the accompanying drawings. FIG. 1 shows a schematic diagram of a recording system of a recording/reproducing apparatus using a charge latent image according to the present invention.
2 is a side view showing the I8 configuration; FIG. 2 is a block diagram showing the schematic configuration of the reproducing system of the recording/reproducing apparatus using charge latent images of the present invention;
FIG. 3 is a perspective view of a portion of the detection head for explaining the configuration of the detection head.

4 to 6 are block diagrams used to explain the configuration of the detection head used in the recording and reproducing apparatus using charge latent images of the present invention, and FIG. Side view showing the general configuration of other configurations of the system, No. 8
The figure is a plan view schematically showing a color separation striped filter used in the recording system of the recording/reproducing apparatus using the charge latent image shown in FIG. 7, and FIG. 9 is the recording using the charge latent image of the present invention shown in FIG. Front views of other configurations of the recording system of the reproducing apparatus, FIGS. 1O and 11 show the scanning mode of the detection head with respect to the recording area recorded by the recording system of the recording and reproducing apparatus using the charge latent image shown in FIG. 7. 12 and 13 are block diagrams showing an example of a circuit for signal processing of the output signal of the detection head. FIG. Overview of other configuration aspects of the system +18
15 is a plan view of an example configuration of the three-color separation optical system, FIG. 16 is a perspective view of the three-color separation optical system shown in FIG. 15, and FIG. 17 is a latent charge image shown in FIG. 14. FIG.
8@ is a curve diagram for explaining correction of the bias point of the gate voltage of the floating gate field effect transistor for voltage detection.

FIG. 19 is a block diagram showing an example of the configuration of the detection head.

In FIG. 1 showing a schematic configuration of a recording system for recording and reproducing by position Vi using a charge latent image of the present invention, Q is a subject to be recorded and reproduced, and Dr is a subject to be recorded and reproduced. A recording medium for recording the optical image of Q as a charge image (in the example shown in the first figure, a recording medium disk...disc...
・L is an imaging lens.

The recording medium Dr described above is composed of an electrode E which also serves as a substrate of the recording medium, and a charge latent image forming member CHL made of a good insulating material, and is rotatable about a rotation shaft 7. . Re H is a recording head composed of a glass substrate BP, a transparent electrode Et, and a photoconductive layer member PCL, and a power supply vb is connected between the transparent electrode Et of this recording head RaH and the electrode E of the recording medium Dr. They are connected so that an electric field of a predetermined strength is formed between the transparent ffi pole Et in the recording head RaH and the electrode E of the recording medium Dr.

Therefore, when the optical image of the subject Q is formed by the imaging lens L onto the photoconductive layer member PCI7 in the recording head RaH, the light guide t1 in the recording head ReH! Layer member PC
Since the electric resistance value of L changes in accordance with the optical image of the subject, the charge latent image forming member CHL in the recording medium Dr
A charge image corresponding to the optical image of the subject Q is formed.

Of course, the recording medium Dr described above is not limited to a disk shape, but may be a tape shape, a sheet shape, a card shape, or any other shape and size.

FIG. 2 is a block diagram showing an example of the configuration of a detection head used to read out a charge image from a recording medium Dr on which a charge image corresponding to an optical image to be recorded and reproduced is recorded. Further, FIG. 3 is a perspective view of a portion of the detection head used to explain the configuration of the detection head.

In Figures 2 and 3, D F fgl-rj F
fgn, etc. are bloating gate field effect transistors for voltage detection, but in the following explanation, it is important to distinguish between floating gate MO5 type field effect transistors DF fgl -D F fgn for voltage detection. Floating gate MO for voltage detection
It is sometimes described as an 8-type field effect transistor DFfg.

In the detection head shown in FIG.
D2. ED3...EDn are voltage detection electrodes, which are similar to the voltage detection electrodes EDI, ED2. ED:1-ED
n are each individual connection &IQ I, Q 2. Q
3...Floating for voltage detection by turning on
Gate MO3 type field effect transistor DFfgl, DF
fg2, D F fg3... are connected to the gate ftll4ii of D F fgn.

Also, the floating gate MO3 type field effect transistor DFfgl for each voltage detection described above.

D F fg2. D F fg:l-D F fgn
The drain electrodes of the floating gate MO3 type field effect transistors DFfgl, DFfg2 . DFfji3...The source electrodes of DFfgn are connected to individual switching field effect transistors S Fl, S F
2. S F3SFr is connected to the drain electrode of the corresponding one in S F3SFr, and is further connected to the respective switching field effect transistors S Fl, S F2 . S
Each source electrode in F3...SFn is connected in common to the output terminal 1. RQ in FIG. 2 is a load resistance.

The individual switching field effect transistor S
Fl, S F2. Each gate electrode in SF3-5Fn receives switching pulses PI, P2 . P3...Pn is supplied.

Switching pulses PL, P2 . As is clear from the waveform diagram illustrated in FIG. 24, P3...Pn are supplied to the clock terminal 8 of the shift register SR (a in FIG.
), P on the time axis as illustrated in FIG. 24(b) to (d).
This is because they are sequentially output from the shift register SR as follows: 1→P2→P3→...

The above-mentioned individual switching field effect transistor S
Fl, S F2. One selected one of SF3-3Fn is sequentially turned on on the time axis.

So each individual connection line Q1. Q2. Q
3...Floating for voltage detection by Qn.
Gate MO5 type field effect transistor DFfg1. D
Ffg2. DFfg3...a plurality of voltage detection type Vi4ED+ connected to the gate electrode of DI-fgn,
ED2. The voltage corresponding to the surface potential of each of the multiple locations of the object to be detected occurring at ED3...EDn is:
Floating gate M for multiple voltage detection described above
O8 type field effect transistor D Ffgl, D Ff
g2゜1) Ffg3...From the source side of DFfgn,
Individual switching field effect transistors S Fl, S F2 . Since the switching pulses PL, P2 . F3...
・Individual switching field effect transistors SF1 that are turned on one after another as are sequentially output.
゜SF2. From the source side of SF3...SFn, individual voltage detection electrodes EDI and ED are formed by electrostatic induction corresponding to the surface potential of each of multiple locations on the object to be detected.
2. A voltage corresponding to the voltage generated at ED3...EDn is sent out to the output terminal 1 in series on the one time axis.

Therefore, for example, as shown in the third diagram, a plurality of voltage detection electrodes EDI, ED2. The detection head EDA, which is provided so that ED3-EDn are arranged in one straight line, is connected to a plurality of voltage detection electrodes E I)1, ED2. ED3
...When the EDn is moved relative to the object to be detected in a direction perpendicular to the direction in which it is aligned, a time-series image corresponding to the two-dimensional charge image formed on the object to be detected is generated. An electrical signal will be sent to the output terminal 1.

The detection head shown in the third figure described above includes a plurality of voltage detection electrodes EDI, ED2 . ED3... and connection lllA121
~Qn, and a floating gate MO8 type field effect transistor DFfgl for multiple voltage sensing.

D Ffg2. D Ffg3..., shield member S
A. Multiple switching field effect transistors SF
I.

SF2. SF3...SFn and the like are highly integrated using well-known integrated circuit technology and formed on the base BP.

The base body BP of the detection head EDA includes a plurality of voltage detection 1t14EDI, ED2. ED3... and a plurality of floating gate open O8 field effect transistors for voltage detection DFfgl, DFfg2. DFfg3
After a predetermined thin film pattern is formed by the shield member SA and other constituent members, the entirety thereof is covered with an insulating film, for example, a thin film of silicon dioxide, thereby shielding the constituent members of the detection head from the atmosphere. is in a state of being

In addition, in FIG. 3, a plurality of voltage detection electrodes EDI, E are shown to facilitate understanding of the principle of construction and operation of the detection head, which will be described later with reference to FIGS. 4 to 6.
D2. ED3... and floating gate MO8 type field effect transistor Dt'fgl for multiple voltage detection.
, DFfg2. DFfg3 . . . and the shield member SA, etc., are merely shown schematically along with the base body BP.

As described above, the plurality of voltage detection electrodes EDI, ED2, ED3, . . . are provided on the base body BP of the detection head EDA.
and a plurality of voltage sensing floating gate MO5 field effect transistors pFfgl.

D Ffg2. D Ffg3, etc. are entirely covered with an insulating film 1, for example, a thin film of silicon dioxide, and are shielded from the atmosphere, so that each voltage detection floating gate open O8 type field effect transistor D Ff
gl, D Ffg2. A floating gate for voltage detection in D Ffg3... and each voltage detection electrode EDI, ED2... connected thereto. ED3...
In addition, since the entire connection line etc. is isolated from the atmosphere by the insulation I4 film, the floating gate open O8 type field effect transistor D for detecting the IT voltage is used.
Ffgl, D Ffg2. For the floating gate circuit for voltage detection in D Ffg3...

Static electricity caused by friction between the floating gate circuit for voltage detection and the atmosphere is not applied, and the floating gate MO5 type field effect transistor D Ffgl, D for voltage detection in the detection head EDA
Ffg2. In the floating gate circuit for voltage detection in D Ffg3..., static t! ! The surface potential of the charge latent image forming member CHL of the recording medium Dr given by induction can be detected satisfactorily.

FIG. 4 shows the charge latent image forming member CHL on the recording medium when the voltage detection electrode ED in the detection head EDA is brought close to the charge latent image forming member CHL on the recording medium.
A voltage generated by electrostatic induction in the voltage detection electrode ED in the detection head EDA in accordance with the surface potential of HL is applied to the floating gate of the floating gate open O8 type field effect transistor DFfg for voltage detection in the detection head EDA. Floating gate MO3 type field effect transistor DF for voltage sensing by given
fg shows that it is possible to output a voltage that corresponds well to the surface potential of the charge latent image forming member CHL of the recording medium Dr from the non-grounded end of the resistor 9 connected to its source to the output terminal 10. In FIG. 4, the voltage detection electrode ED is electrostatically shielded from the other voltage detection electrodes ED by the shield member SA, so that it can detect the charge latent image forming member of the recording medium Dr with high detection resolution. The surface potential of CHL can be detected.

As described above, in the charge latent image recording/reproducing apparatus of the present invention, the charge image on the charge latent image forming member CHL of the recording medium Dr is detected, that is, the charge latent image forming member CHL
When detecting the surface potential of the recording medium Dr, a voltage generated by electrostatic induction in the voltage detection electrode ED corresponding to the surface potential of the charge latent image forming member CHL of the recording medium Dr is connected to a floating gate MO3 type field effect for voltage detection. Since it is sufficient to apply it to the gate of the transistor DFfg, even if the gate circuit of the floating gate MO5 field effect transistor DFfg for voltage detection is covered with an insulating film so as to be completely isolated from the atmosphere, Detection of the surface potential on the latent charge image forming member CHL of the recording medium Dr is carried out without any trouble, and the charge on the latent charge image forming member CHL of the recording medium Dr is always well detected without performing a reset operation as in conventional detection heads. Image detection, that is, detection of the surface potential on the charge latent image forming member CHL is performed.

However, if the gate circuit of the floating gate MO8/11211 field effect transistor DFfg for voltage detection is covered with an insulating film so as to be completely isolated from the atmosphere as described above, the detection head EDAti-
Multiple floating gate MOS type field effect transistors DF for voltage detection used to configure
Since the gates of each of fg are completely floating, the gate potential of each floating gate MOS field effect transistor DFfg for voltage detection is in an undefined state. A means is required to ensure that the gate potentials of the floating gate MOS field effect transistors DFfg are each in an appropriate state.

FIGS. 5 and 6 are diagrams for explaining means for bringing the gate potential of the floating gate MOS type field effect transistor DFfg for voltage detection into an appropriate state, respectively. As shown in FIG. 3, the detection head EDA has Wi number of voltage detection electrodes EDI, ED2 . E
D3..., connection lines Ql to Qn, and a plurality of floating gate MOS field effect transistors DFfgl for voltage detection.

D Ffg2. D Ffg3..., multiple switching field effect transistors S F'l, S F2
．． Floating gate MOS type field effect transistor for voltage detection when constituent members such as S F3-=S f' n are electrostatically shielded by shield member SA 1)1.'fg and voltage detection electrode ED and The electrical connection relationship between the shield member SA and the shield member SA is as shown in FIGS. Furthermore, a stray capacitance Cg is connected to the gate of the floating gate MOS field effect transistor DFf for voltage detection and the ground +1j, and a stray capacitance Cg is connected to the gate of the floating gate MOS field effect transistor DFf for voltage detection. There is a stray capacitance Cd between the gate and drain.
exists, so when voltage is supplied to the terminal 11 shown in FIGS. 5 and 6 connected to the shield member SA, as shown in FIGS. In addition, capacitors Cs, Cg, and C are connected between the voltage detection electrode ED, the shield member SA, and the voltage detection floating gate MOS field effect transistor DFfg.
d etc., respectively.

Since it is electrically coupled, a floating gate MOS field effect transistor DFfg for voltage detection
The voltage on the 70-ting gate of is varied in response to the voltage supplied to terminal 11.

Therefore, by changing the voltage supplied to the terminal 11 described above, the voltage at the floating gate of the floating gate MOS field effect transistor DFfg for voltage detection can be adjusted to the voltage of each floating gate MOS field effect transistor for voltage detection. Transistor DFf
It is possible to control g to an appropriate value for good operation.

If the above-mentioned shield member SA is individually provided for a plurality of voltage detection floating gate MOS type field effect transistors DFfg@, each of the voltage detection floating gate MO5 type field effect transistors DFfg@ By changing the voltage supplied to the shield member SA, a floating gate MO5 type field effect transistor o+h for multiple voltage detection
It goes without saying that the gate voltage for each fg can be individually set to an appropriate value.

Figure 18 shows the floating gate MO5W for each voltage detection to which each voltage detection electrode EDL, ED2, etc. used in the configuration of the detection head EDA is connected.
flt field effect transistor DFfgl, DFfg2・
If the voltage of the floating gate of ... is the value shown before correction in the figure, then
By changing the voltage supplied to the terminal 11 described above, the voltages at the floating gates of the floating gate MOS field effect transistors D Ffgl and D Ffg2 for voltage detection can be changed as shown after correction in the figure. FIG. 18 is a diagram illustrating and explaining scales that change the value in the direction of the arrow. The bias voltage of the floating gate is applied to the voltage detection electrodes EDI, ED connected to the floating gates of the floating gate open O8 type field effect transistors DFfgl, D Ffg2... for voltage detection.
2(7) gate bias because the voltages mentioned above are the same).

By the way, the plurality of floating gate MO5 type field effect transistors DFfgl, DFfg2, etc. for voltage detection used in the configuration of the detection head EDA have minute shapes, and they are mutually extremely small. Since they are arranged at different distances from each other, a separate shield member SA is provided between them, and a separate shield is provided for each of the plurality of floating gate open O8 type field effect transistors DFfg for voltage detection. Part S
It is difficult to configure a structure in which the voltage supplied to A can be changed and the gate voltage of each floating gate open O8 type field effect transistor DFfg for voltage detection can be individually set to an appropriate value.

Therefore, by changing the voltage supplied to the shield member SA, the gate voltage of each of the plurality of floating gate open O8 type field effect transistors DFfg for voltage detection can be individually set to an appropriate value. As such a detection head, a detection head EDA having a configuration as shown in FIG. 19 is suitable.

That is, the detection head EDA illustrated in the block diagram of FIG. 19 includes a plurality of bloating gate open O8 type field effect transistors DFf, 1°DFfg2, . . . for voltage detection used in the configuration of the detection head EDA. In a detection head EDA configured such that output signals from the detection head EDA are sequentially extracted in series on the time axis, the detection head EDA
Floating gate open O8 type field effect transistor DFfgl for multiple voltage detection used in the configuration of
, DFfg2, . . . , there is always only one floating gate MO3 type field effect transistor DFfg for voltage detection from which an output signal is taken out at a certain point in time. Focusing on this point, in the detection head EDA illustrated in the block diagram of FIG.
Similar to the configuration of the illustrated detection head EDA, the detection head E
The plurality of voltage detection electrodes EDI, ED2, etc. used in the configuration of the DA, and the plurality of floating gate open O8 type field effect transistors for voltage detection DF
fgl, D Ffg2...One shield member SA commonly used for all other components
The gate voltage of one floating gate open O8 type field effect transistor DFfg for voltage detection, which is in an operating state such that an output signal is taken out at that time, is set to an appropriate gate voltage. The structure is such that it can be controlled in a time-division manner.

In FIG. 19, LM is a memory (line memory), and this memory LM includes a plurality of voltage detection electrodes EDI, ED2, ED2,
A plurality of floating gate MO3 type field effect transistors D for voltage detection are provided corresponding to...
F fgl= D F fgn The individual voltage sensing floating gate open O8 field effect transistors DFfg each store data relating to the gate bias value required for proper operation. .

Among the plurality of floating gate open O8 type field effect transistors DFfgl, DFfg2, etc. for voltage detection used in the configuration of the detection head EDA, the one for voltage detection from which the output signal is extracted is Floating gate MO5 type field effect transistor DF
reading data related to the gate bias of fsc from the memory LM and supplying it to the digital-to-analog converter DAC; amplifying the output signal from the digital-to-analog converter DAC by an amplifier AMP; By supplying the potential of the shield member SA to the shield member SA in the detection head EDA, the gate bias of the floating gate MO5 type field effect transistor DFfH for voltage detection in the state where the output signal is taken out at that time is appropriate. Ensure that the gate bias is set to a suitable value.

Then, based on the data sequentially read out from the memory LM, the potential of the shield member SA is changed to a floating gate open O8 type field effect transistor DFfg for voltage detection in which the output signal is being taken out at that time. By changing the gate bias of the detection head E to be able to set an appropriate gate bias
Multiple floating gate MO3 type field effect transistors DF for voltage detection used in the DA configuration
fg is made to perform proper operations in sequence.

Next, an embodiment will be described in which the charge latent image recording and reproducing apparatus of the present invention is configured as a color image recording and reproducing apparatus. First, FIG. 7 is a side view of a part of a configuration example of a recording system in an embodiment in which the charge latent image recording and reproducing apparatus of the present invention is configured as a color image recording and reproducing apparatus. The figure is a plan view of a part of a color separation striped filter having a structure in which a set of strips each having at least three different types of strips is repeatedly arranged.

FIG. 9 shows a plan view of the recording medium disk shown in FIG. 7, and FIGS. 10 and 11 show recording of a charge latent image forming member in a recording/reproducing apparatus using charge latent images. FIG. 12 is a plan view showing the correspondence between the recording and reproducing area of the charge latent image forming member and the detecting head for explaining the reproducing operation by the detecting head with respect to the reproducing area;
FIG. 3 is a block diagram of a configuration example of a signal processing circuit.

The recording medium disk Dr shown in FIG. 7 is composed of an electrode El made of a conductive material and a charge latent image forming member CHL. As a result of the movement, the charge image is rotated or rotated in the direction of arrow R in FIG.

The data are recorded sequentially in RZ2...

In the recording medium interior 41Dr- shown in FIG. 7, the electrode El and the substrate of the recording medium disk Or are also used as the charge latent image forming member CHL in the recording medium disk Dr. A material layer having high insulating properties that can hold the charge image formed thereon for a long time, for example, an insulating layer formed of a polymeric material, may be used.

In the recording and reproducing apparatus using a charge latent image shown in FIG. 7, between the subject Q and the recording medium disk Dr, the optical image of the subject Q is separated into colors, and the image of the subject formed by the imaging lens L is disposed between the subject Q and the recording medium disk Dr. An optical image-to-charge image conversion element used as a recording head having a function of generating a charge image corresponding to an optical image is provided. The optical image-to-charge image conversion element used as a recording head in The color separation striped filter F having the above configuration, a transparent electrode Etw, and a photoconductive layer member PCL are laminated.

The above-mentioned color separation striped filter F includes 3 for color separation.
Types of color strips 1 For example, as illustrated in Figure 8, color strips with three primary colors of additive color mixture (three types of color strips shown as red, green, and blue in Figure 8) In other words, it is possible to use a color separation striped filter F having a configuration in which strips in 3N order are made into one strip set and the strip sets are repeatedly arranged.

The three types of color strips for color separation mentioned above are as follows:
The color strips are not limited to the three primary colors of additive color mixture as in the above example. Furthermore, the color separation striped filter F described above may be provided in the optical path between the subject Q and the photoconductive layer member PCL in the optical image-to-charge image conversion element.

In the recording/reproducing apparatus using a charge latent image shown in FIG. 7, in a state where a constant voltage is applied by a power supply vb between the transparent electrode Etw in the optical image-to-charge image conversion element and the electrode E1 of the recording medium disk Dr, Light from the subject Q is applied to the optical image-charge image conversion element via the imaging lens L, and the photoconductive layer member PCL in the optical image-charge image conversion element is
When an optical image of the subject is formed on the photoconductor, the electrical resistance value of the photoconductive layer member PCL before the optical image-to-charge image conversion changes according to the optical image of the subject Q formed thereon. What are you doing? become.

Therefore, in the optical image-to-charge image conversion element, the optical image of the object is formed in the form of color-separated stripes on the end surface of the photoconductive layer member PCL facing the charge latent image forming member CHL. A charge image area is formed in which three types of charge images separated into three types of color strips in the filter F are formed.

The charge image corresponding to the optical image of the subject in the charge image area formed on the end face of the photoconductive layer member PCI as described above is transferred to the charge latent image forming member CH on the recording medium disk Dr.
In FIG. 10 and FIG. 11, <<
7) Z(l(), Z(G), Z(11), Z
It is recorded in each area such as (1(), Z (G), Z (n)-.

Charge WIfk forming member CHL in recording medium disk Or
The respective charge image areas formed on the end face of the photoconductive layer member PCL and the charge image area Z (R
), Z(G), Z(II), Z(R), 7. (G),
Z(13)... Which correspondence relationship is the correspondence between the color strip (red) in the color separation striped filter F and the charge image area z(i+) in FIGS. Color stripes (green) in the separation striped filter 11 and FIGS.
The charge image area Z(G) in FIG. 1 corresponds to, and furthermore,
Color stripe (blue) in color separation striped filter F and the 10th
The correspondence relationship is such that the charge image area Z(l() in the figure and FIG. 11 corresponds to each other).

During the recording operation, the end surface of the photoconductive layer member PCL in the optical image-to-charge image conversion element and the charge latent image forming member CHL of the recording medium disk Dr are in close contact with each other, or there is a minute gap between them. When the recording medium disk Dr is rotated or rotated by completing the recording operation for the 51 recording i1G raw areas such that a gap is formed, the photoconductive layer member PCL in the optical image-charge image conversion element described above is The end face of the charge latent image forming member CHL for the recording medium [Dr] is spaced apart from each other.

In FIGS. 1O and 11-, EDA is a detection head, and this detection head EDA performs main scanning in the X direction in FIGS.
Sub-scanning is performed in the Y direction in FIGS. 0 and 11. As the detection head E1)A, a configuration S as shown in FIG. 19 may be used.

Then, in the charge latent image recording and reproducing apparatus of the present invention, the charge latent image is stored as a charge image in the recording and reproducing area of the charge latent image forming member CHL where the charge latent image corresponding to the optical image to be recorded and reproduced is being recorded. When a recorded information signal is to be reproduced, as illustrated in FIG. 10, a charge latent image forming member CI ( A charge image in which three types of charge images are formed in the recording and reproducing area formed in L, in which the optical image of the subject is separated into three types of color strip colors in the color separation striped filter F. Area Z(R), Z(G),
The detection head E is arranged in such a manner that the arrangement direction of the plurality of electrodes coincides with the longitudinal direction of each recording/reproducing area of Z (B).
DA is arranged and the detection hand EDA is sub-scanned in the direction of the arrow Y in the figure, or as illustrated in FIG. The optical image of the subject is divided into three types of color strips in the color separation striped filter F for the recording/reproducing area formed on the charge latent image forming member CHL in accordance with the pair. Sequential charge image areas Z (
R), Z(G), Z(B)(7) For each recording/reproducing area, sequential detection electrodes Edl, ED2... (or sequential voltage detection electrodes) arranged on the detection head EDA floating gate MO8)! :! Floating gate ff of field effect transistor DFfg
The detection head EDA is sub-scanned in the longitudinal direction of the recording and reproducing area formed on the charge latent image forming member CHL, with each one of the electrodes corresponding to each other. or

As a result, in the case shown in Fig. 10, each primary color signal is obtained as a line sequential signal, and in the case shown in Fig. 11, each primary color signal is obtained as a dot sequential signal.
As shown in the figure, the charge image area Z is detected by the detection head EDA.
The red primary color signal read from (R) and the charge image area Z
The green primary color signal read from (G) and the charge image area Z
The blue primary color signal read from (B) is #! The signals are sequentially sent out in series on the time nn axis and supplied to the input terminal 3 of the signal processing circuit configured as illustrated in FIG.
I) The red primary color signal read out from the charge image area Z (R) by A, the green primary color signal read out from the charge image area Z (G), and the blue signal read out from the charge image area Z (8). The point sequential signal consisting of the primary color signals is supplied to the input terminal 13 of a signal processing circuit configured as illustrated in FIG.

In the signal processing circuit shown in FIG. 12, when an output signal in the form of a line sequential signal outputted from the detection head EDA in FIG. 10 is supplied to the input terminal 13 of the circuit, each of the primary color signals is switched. Since the movable contact V of the changeover switch SW is given to the movable contact ■ of the switch SW, the movable contact V of the changeover switch SW is
Fixed contacts a-+b-+C→B-+ for each horizontal scanning period
The fixed contacts a and b in the switching switch SW shown as on are switched cyclically as follows: l)→C→...

The output signals from C are sent to individual one-line memories LMI, LM2 . It is configured to be stored in LM3.

Each of the one-line memories LMI, LM2 . LM3 is
Since the information signals for one horizontal scanning period stored therein are repeatedly reproduced a predetermined number of times and sent to the output terminals 14, 15, and 16, each primary color signal sent to the output terminals 14 to 16 is The luminance signal formed by the addition of simultaneous signals is such that each primary color signal used to compose it has one
Since the brightness signal is cyclically switched every horizontal scanning period, it becomes a brightness signal with high definition. Luminance signals Yl, Y2 . Y3 and the like explain that a high-definition luminance signal can be obtained as a luminance signal.

Further, in the signal processing circuit shown in FIG. 13, when an output signal in the form of a dot sequential signal outputted from the detection head EDA in FIG. 11 is supplied to its input terminal 13,
This is because each of the primary color signals mentioned above is given to the movable contact V of the changeover switch SW.

The movable contact V of the changeover switch SW changes from fixed contact a to b −+ c −+ a-s b-+ Q every pixel period.
→ Each fixed contact a in the changeover switch SW is cyclically switched as follows.

The output signals from b and c are respectively sent to individual one-pixel memories PM1. ．． PM2. The information is stored in PM3.

Each of the one-pixel memories PMI, PM2 . Since the PM 3 repeatedly reproduces the information signal of one pixel period stored in it a predetermined number of times and sends it to the output terminals 14, 15 and 16, each primary color sent to the output terminals 14 to 16 is The luminance signal formed by the addition of simultaneous signals has high definition because each of the primary color signals used to compose it is cyclically switched every pixel period. It becomes a luminance signal. Luminance signals Yl, Y2 . Y3 and the like explain that a high-definition luminance signal can be obtained as a luminance signal.

In addition, when reproducing a signal as shown in FIGS. 10 and 11, position control is performed so that the detection head EDA and the recording/reproducing area can be accurately aligned.

Next, with reference to FIGS. 14 to 17, another embodiment in which the charge latent image recording and reproducing apparatus of the present invention is configured as a color image recording and reproducing apparatus will be described.

FIG. 14 shows a part of a recording system in an embodiment of the recording and reproducing apparatus using charge latent images of the present invention, which is configured to record and reproduce three optical images separated for each primary color by a three-color separation optical system. FIG. 15 is a plan view of the three-color separation optical system, FIG. 16 is a perspective view of the three-color separation optical system, and FIG. 17 is a charge latent image formation in a recording/reproducing device using a charge latent image. FIG. 3 is a plan view illustrating the correspondence between the recording/reproducing area of the charge latent image forming member and the detection head for explaining the reproducing operation by the detection head with respect to the recording/reproducing area of the member.

First, in Fig. 14, Q is the subject, Llill image lens, C8A is the three-color separation optical system, Re Ii is the recording head f) r is the recording medium disk, and I) r is the electric current t4i made of conductive material. El and charge latent image forming member CH
L, and this recording medium disk Dr is a rotating shaft or I! :J! The rib jII 112 rotates or rotates in the direction of arrow R in the figure.

In the recording medium disk Dr, the electrode E1 and the substrate of the recording medium disk Dr are also used. A layer of material with high insulation properties.

For example, an insulating layer formed of a polymeric material may be used.

In addition, the recording head RQH has a transparent support, IA4fiBP
, a transparent electrode Etw, and a light guide "ft1 layer member PcL" are laminated.

Furthermore, a perspective view of the entire three-color separation optical system C8A is illustrated in FIG. 16, and a plan view for explaining the principle of its construction is shown in FIG. 15. The resolving optical system C3A has a first optical system having different optical properties. Second
A first imaging plane on which a first optical image is formed by the light transmitted through both of the two dichroic ink mirrors, and a first imaging surface on which the light reflected by the first dichroic ink mirror is formed on the entire first prism. a second imaging surface on which a second optical image is formed with the optical path length being extended in a predetermined manner by being reflected by the reflective surface so as to pass through the first prism;
The light reflected by the dichroic ink mirror is reflected by the total reflection surface of the second prism so as to pass through the second prism, and a third optical image is formed with the optical path length extended in a predetermined manner. 15 and 16, OP reflects red light and reflects green light. A prism-shaped dichroic ink mirror (a dichroic mirror (R surface) that transmits light and blue light, and a dichroic mirror (B surface) that reflects blue light and transmits green and red light, which are orthogonal to each other). The dichroic prism 1)p) is a prism having a total reflection surface Mr, and 1]b is a prism having a total reflection surface Mb.

In FIG. 15, when the light from the object Q enters the dichroic ink prism Dp mentioned above through the imaging lens L, among the light incident on the five dichroic ink prisms Dp, the J dichroic mirror (R surface) and the dichroic mirror (B
The green light component of the optical image of the object that has passed through both the dichroic prism D
Of the light incident on p, the red light component of the optical image of the subject reflected on the dichroic mirror R surface is reflected on the total reflection surface of the prism Pr, passes through the prism Pr, and is reflected on the above-mentioned image forming surface Ig. in the same plane as.

In addition, the blue light component of the optical image of the subject is imaged on the image forming surface Ir that is close to the above-mentioned image forming surface rg, and of the light incident on the dichroic prism OP, is reflected by the 8 surfaces of the dichroic mirror. is reflected by the total reflection surface of prism pb, passes through prism Pb, and forms an image that is in the same plane as the above-mentioned image formation plane [g+Ir and is close to the above-mentioned image formation plane IgrIr. The image is formed on the image plane Ib.

Then, the three imaging planes I g, I r, I b
are formed in the same plane as described above, and are arranged in the arrangement M such that they are arranged on a straight line.

Three-color separation optical system C shown in FIGS. 15 and 16
In 8A, the prism Pr extends the optical path length of the red light, and the prism pb extends the optical path length of the blue light, and as described above, the imaging plane Ig of the green light and the imaging plane Ig of the red light are formed.
As described above, the prism Pr and the blue light imaging plane Ib are arranged in the same plane and close to each other on a straight line. , Pb
The length of the optical path is increased by 1, or the deviation of the optical axis of each color light is equal to a, that is, X=a. The amount of extension of the optical path length by the prisms Pr and Pb described above is calculated as follows: where the optical path length in the prisms Pr and Pb is d, and the prisms Pr,
If the refractive index of #y quality of Pb is n, then X=d(
Since it is expressed as
This can be done by changing the optical path length d in b and the refraction type n of the constituent materials of the prisms Pr and Pb.

As in the three-color separation optical system C3A of the configuration described above, three image forming surfaces 1 are formed adjacent to each other in a straight line within the same plane.
When using a color separation optical system that forms an optical image of the subject separated into individual colors r, Ig, and Tb,
Three high-resolution images are formed in parallel at the positions of the plurality of imaging planes described above.

Therefore, in the recording and reproducing apparatus using the 1E latent image shown in FIG.
Between the pole Etw and the "straight rod El of the recording medium disk Dr,'
In a state where a constant voltage is applied by the source Vb, an optical image of the subject Q is transmitted to the photoconductive layer member PC in the recording head ReH via the imaging lens L and the above-mentioned three-color separation optical system C8A. When images are separated into individual colors and formed on three imaging planes Ir, Ig, and Ib that are formed close to each other in a straight line in the same plane, the electrical resistance of the photoconductive layer member PCL in the recording head ReH increases. The value of the leading ff1t layer member PCL facing the charge latent image forming member CHL of the recording medium disk Dr in the recording head ReH changes in accordance with the optical image of the subject Q imaged thereon.
A charge image area is formed on the end face of the image forming apparatus 1, in which three types of charge images are formed in which the optical image of the subject is separated into the colors of the three types of color stripes in the color separation striped filter F.

The charge image corresponding to the optical image of the subject in the charge image area formed on the end face of the photoconductive layer member PCI as described above is transferred to the charge latent image forming member CHL on the recording medium disk Dr.
Then, charge images in the charge image areas corresponding to the charge images in the respective charge image areas described above are recorded in the respective areas such as R, G, and B in FIGS. 17(a) and 17(b).

During the recording operation, the end surface of the photoconductive layer member PCL in the recording head RCH described above and the charge latent image forming member C)IL of the recording medium disk D are in close contact with each other, or there is a minute gap between them. He was made to be formed,
When the recording medium disk Dr is rotated or rotated due to the end of the recording operation for one recording/reproducing area, the electric charges on the end face of the photoconductive layer member PCL in the optical image-to-charge image conversion element and the recording medium disk Dr are The latent image forming member CHL is separated from the latent image forming member CHL.

In (a>, (b) of FIG. 17, EDA is a detection head, and this detection head EDA is shown in (a) of FIG. 17,
Main scanning is performed in the X direction in (h), and the 17th
Sub-scanning is performed in the Y direction in (a) and (b) of the figures. As the detection head EDA, a configuration shown in FIG. 19 may be used.

As a result, in the case of (a) in FIG. 17, each primary color signal is obtained as a field sequential signal, and in the case of (b) in FIG. 17, each primary color signal is obtained as a line sequential signal. Become.

It goes without saying that a plurality of detection heads EDA may be used simultaneously to obtain simultaneous signals.

The signals output from each embodiment described so far are:
After performing signal processing on it as necessary, it can be used to obtain a hard copy supplied to a printer, or supplied to a display device to obtain a soft copy, or supplied to a file device a for filing, Alternatively, the recording medium disk Dr can be used in various ways, such as storing information recorded on the charge latent image forming member CHL of the recording medium disk Dr and reusing it later.

(Effects of the Invention) The present invention provides that a voltage generated by electrostatic induction is applied to the gate electrode in accordance with the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. A charge latent image recording/reproducing device comprising a detection head including a field effect transistor for voltage detection that generates an electric signal corresponding to the surface potential of a charge latent image forming member, A floating gate electric field is used as a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by electrostatic induction to the gate electrode according to the surface potential of the member. A charge latent image recording and reproducing device equipped with a detection head including an effect transistor, and a surface potential of a charge latent image forming member on which a charge latent image corresponding to the information to be recorded and reproduced is formed. A floating gate field effect transistor is used as a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by electrostatic induction to the gate electrode, and
A recording/reproducing device using a charge latent image, which is equipped with a means for controlling the gate potential of the floating gate field effect transistor for voltage detection by means of an externally applied voltage; A plurality of floating groups 1- for voltage detection in which voltages generated by electrostatic induction are individually applied to gate electrodes in accordance with individual surface potentials at a plurality of locations on a charge latent image forming member in which latent images are formed. 1i field effect transistor, and a means for sequentially extracting the output signals of the plurality of floating gate field effect transistors described above in series on the time axis and outputting them as time series signals. Corresponds to the optical image information of the object to be recorded and reproduced, color-separated by a latent image recording/reproducing device and a color separation striped filter formed by repeatedly arranging a set of strips each consisting of at least three different types of strips. static wiM depending on the individual surface potentials at multiple locations of the charge latent image forming member on which charge latent images are formed.
A plurality of floating gate field effect transistors for voltage detection, in which the voltage generated by the conductor is individually applied to the gate electrode, and the output signals of the plurality of floating gate field effect transistors described above are serially connected on the time axis. A charge latent image recording and reproducing device is provided with a means for sequentially extracting charge latent images and outputting them as time-series signals. A detection head arranged in such a manner that the longitudinal direction of the recording/reproducing area formed on the forming member and the direction in which the poles of the plurality of gates 1 to 1 of the detection head are arranged are -e, is used to form the above-mentioned color separation stripes. A charge latent image recording and reproducing device comprising means for sequentially corresponding each of the recording and reproducing areas formed on a charge latent image forming member in correspondence with each strip in a charge latent image forming member; A charge latent image corresponding to the optical image information of the object was formed as a color-separated record using a color-separated striped filter formed by repeatedly arranging a set of strips each consisting of at least three different types of strips. a plurality of floating gate field effect transistors for voltage detection in which voltages generated by i7% electric induction are individually applied to gate electrodes in accordance with individual surface potentials at a plurality of locations on the charge latent image forming member; Recording by latent charge image comprising means for sequentially extracting the output signals of a plurality of floating goo 1-fit field effect transistors arranged in series on the time axis and outputting them in time series (No. 8) II. The recording/reproducing device is a color separation striped filter in which a plurality of game + - A detection head in which # electrodes are arranged is used, and the arrangement direction of the plurality of gate electrodes of the detection head is perpendicular to the longitudinal direction of each strip in the color separation striped filter. A recording/reproducing apparatus using a latent charge image, comprising means for sub-scanning a detection head arranged in an arrangement manner in the longitudinal direction of each strip in the color separation striped filter.

The optical information to be recorded and reproduced is decomposed into at least three optical images having different wavelength ranges, and the imaging planes of the individual optical images obtained are formed in parallel on the same plane, and the individual optical information described above is formed in parallel on the same plane. A charge latent image is formed by applying a voltage generated by static rtIM conduction to the gate electrode in accordance with the surface potential of the charge latent image forming member on which a charge latent image corresponding to optical information on the optical image forming surface is formed. A charge latent image recording/reproducing device equipped with a detection head including a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the member, the charge latent image recording/reproducing device Accordingly, a voltage generated by electrostatic induction is applied to the gate electrode, so that a charge WI corresponding to the surface potential of the image forming member (
Field Effect for Voltage Detection to Generate 1-Electric charge corresponding to the individual optical images having different wavelength ranges as described above using a detection head including a floating gate field effect transistor as a transistor. A charge latent image recording/reproducing device comprising means for detecting an image and means for generating individual color signals based on the output signal of the detection head described as hη, and corresponds to an information signal to be recorded and reproduced. A plurality of floating gates for voltage detection in which voltages generated by static vIi induction are individually applied to the electrodes according to the individual surface potentials at multiple locations of the charge latent image forming member where charge latent images are formed. Electric field effect 1~
transistor, a means for sequentially taking out the output signals of the plurality of floating gate field effect transistors so as to be arranged in series on the time axis and outputting them as time-series signals, and a means for taking out the output signal No. 48. Since this is a recording/reproducing device using a charge latent image, which is equipped with means for selectively controlling the gate potential of a selected floating gate field effect transistor for voltage detection by an externally applied voltage, the charge latent image of the present invention is In an image recording/reproducing device, voltages generated by electrostatic induction are individually gated in accordance with individual surface potentials at multiple locations of a charge latent image forming member where charge latent images corresponding to information signals to be recorded and reproduced are formed. Ij! Conventionally, when multiple world effect transistors are used to detect the voltage applied to the pole, the potential of the gate circuit gradually increases based on the leakage current between the drain and gate of the field effect transistor. According to the present invention, the above-mentioned problems can be satisfactorily solved, since the reset operation that has been carried out to solve the problems caused by this is no longer necessary.

[Brief explanation of the drawing]

FIG. 1 is a side view showing a schematic configuration of a recording system of a recording and reproducing apparatus using a charge latent image according to the present invention, and FIG. 2 is a block diagram showing a schematic configuration of a recording and reproducing system of a bag for recording and reproducing using a charge latent image according to the present invention. , FIG. 3 is a perspective view of a portion of the detection head for explaining the configuration of the detection head. 4 to 956 are block diagrams used to explain the configuration of the detection head used in the recording and reproducing device using charge latent images of the present invention, and FIG. 7 is a recording system of the recording and reproducing device using charge latent images of the present invention. FIG. 8 is a plan view schematically showing the color separation striped filter used in the recording system of the charge latent image recording and reproducing apparatus shown in FIG. 7;
9 is a front view of another configuration of the recording system of the recording/reproducing apparatus using charge latent images of the present invention shown in FIG. 7; FIG.
11 and 11 are plan views for explaining the manner in which the detection head scans the recording area recorded by the recording system of the recording and reproducing apparatus using the charge latent image shown in FIG. 7, and FIGS. 12 and 13 are the detection FIG. 14 is a block diagram showing an example of a circuit for signal processing of the output signal of the head; FIG. 14 is a side view showing a schematic configuration of another embodiment of the recording system of the recording/reproducing apparatus using a charge latent image according to the present invention; FIG. FIG. 16 is a plan view of an example configuration of the three-color separation optical system, FIG. 16 is a perspective view of the three-color separation optical system shown in FIG. FIG. 18 is a plan view illustrating the scanning mode of the detection head for the recorded recording area; FIG. 18 is a curve diagram illustrating correction of the bias point of the gate voltage of the floating gate field effect transistor for voltage detection; FIG. 20 and 21 are block diagrams showing a schematic configuration of a recording/reproducing device using a previously proposed charge latent image. Part 22 is a block diagram showing an example of the configuration of a detection head. FIG. 3 is a circuit diagram of an example of a detection head used in the device. FIG. 23 is a partial perspective view of an example of a detection head used in the previously proposed recording and reproducing apparatus using charge latent images, and FIG. 24 is a waveform diagram for explaining the operation of the detection head. DESCRIPTION OF SYMBOLS 1... Output terminal, 2... Reset pulse input terminal, 3... Connecting member, 4... Center holder of movable part 5 in displacement drive device 8CM, 5... Movable part, 7, 1.
2... Rotation axis, 8... Clock terminal of shift register SR. 0...Detected object, EDA...Detection head, Er)1
-EDn...Electrode for voltage detection, BGM...Displacement drive device, S a-signal generator, fl 1- Q n- connection line, I)l"1~1) F 11... For voltage detection M.O.
Type 8 field effect transistors, RFI to RFn...Field effect transistors used as reset means and switching means, SF1 to SFn - Field effect transistors for switching. S R/shift register, RZ...Record @reproduction area in charge latent image forming member, DFfgI~D[/'fgn...
Floating gate field effect transistor for voltage detection, SA shield member, Re H-...recording head, l:t, Ejw...transparent electrode, Dr/recording medium disk, E l ・-[1, V b ・-[ Source, LMI-L
M3--Line memory, PMI-PM3--lrl!
! i! 4 memory, SW...changeover switch, Q...subject, L...imaging lens, C5A...three-color separation optical system, I) CL...photoconductive layer member. I r, I g, T b - imaging plane, CHL -
1 latent image forming member, patent applicant: Victor Japan Co., Ltd.
, + 8 stones and 10 items

Claims (1)

[Claims] 1. By applying a voltage generated by electrostatic induction to the gate electrode in accordance with the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. A charge latent image recording/reproducing device comprising a detection head including a field effect transistor for voltage detection that generates an electric signal corresponding to the surface potential of the charge latent image forming member, the charge latent image forming member comprising: A floating gate field effect transistor is used as a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by electrostatic induction to the gate electrode according to the surface potential of the charge latent image forming member. A charge latent image recording/reproducing device 2 is equipped with a detection head configured to include an electrostatic charge latent image recording/reproducing device 2, which detects electrostatic charge according to the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded/reproduced is formed. A floating gate field effect transistor is used as a field effect transistor for voltage detection that generates an electric signal corresponding to the surface potential of the charge latent image forming member by applying a voltage generated by induction to the gate electrode, and the above-mentioned voltage detection A charge latent image recording/reproducing device 3 comprising means for controlling the gate potential of a floating gate field effect transistor by an externally applied voltage, in which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. a plurality of floating gate field effect transistors for voltage detection in which voltages generated by electrostatic induction are individually applied to gate electrodes in accordance with individual surface potentials at a plurality of locations of a charge latent image forming member; There are at least three types of charge latent image recording and reproducing devices 4, which are equipped with means for sequentially extracting the output signals of the floating gate field effect transistors so that they are arranged in series on the time axis and outputting them as time-series signals. Formation of a charge latent image in which a charge latent image corresponding to the optical image information of the object to be recorded and reproduced is color-separated by a color-separated striped filter formed by repeatedly arranging a set of strips each having different stripes. A plurality of floating gate field effect transistors for voltage detection in which voltages generated by electrostatic induction are individually applied to gate electrodes in accordance with individual surface potentials at a plurality of locations of a member, and the plurality of floating gates described above. A charge latent image recording/reproducing device comprising means for sequentially extracting output signals of field effect transistors so as to be arranged in series on a time axis and outputting them as time-series signals, the device comprising: Detection arranged in such a manner that the longitudinal direction of the recording and reproducing area formed on the charge latent image forming member corresponding to each strip in the filter matches the direction of arrangement of the plurality of gate electrodes of the detection head. A charger comprising means for causing the head to correspond sequentially to each of the recording and reproducing areas formed on the charge latent image forming member corresponding to each strip in the color separation striped filter. The latent image recording and reproducing device 5 corresponds to optical image information of a target to be recorded and reproduced color-separated by a color separation striped filter formed by repeatedly arranging a set of strips each having at least three different types of strips. A plurality of floating gate field effects for voltage detection in which voltages generated by electrostatic induction are individually applied to gate electrodes in accordance with the individual surface potentials at multiple locations of a charge latent image forming member on which charge latent images are formed. Recording and reproducing using a latent charge image, comprising a transistor and a means for sequentially extracting the output signals of the plurality of floating gate field effect transistors described above so that they are arranged in series on the time axis and outputting them as time-series signals. The device comprises a plurality of gate electrodes arranged at a pitch substantially equal to the pitch of the array of recording and reproducing regions formed on the charge latent image forming member corresponding to each strip in the color separation striped filter described above. A detection head is used, and the arrangement direction of the plurality of gate electrodes of the detection head is orthogonal to the longitudinal direction of each strip in the color separation striped filter. A charge latent image recording/reproducing device 6 comprising means for sub-scanning the detection head in the longitudinal direction of each strip in the color separation striped filter described above, records and reproduces optical information to be recorded and reproduced in a wavelength range. The imaging planes of the individual optical images obtained by separating into at least three different optical images are formed in parallel on the same plane, and correspond to the optical information on the imaging plane of the individual optical images described above. A voltage generated by electrostatic induction according to the surface potential of the charge latent image forming member on which the charge latent image is formed is applied to the gate electrode, thereby generating an electric signal corresponding to the surface potential of the charge latent image forming member. A charge latent image recording/reproducing device equipped with a detection head including a field effect transistor for voltage detection, in which a voltage generated by electrostatic induction according to the surface potential of a charge latent image forming member is gated. A detection head configured to include a floating gate field effect transistor as a voltage detection field effect transistor that generates an electric signal corresponding to the surface potential of the charge latent image forming member by being applied to the electrode is used to detect the wavelength range described above. A charge latent image comprising means for detecting charge images corresponding to individual optical images having different colors, and means for generating individual color signals based on the output signals of the detection head described above. The recording/reproducing device 7 applies voltages generated by electrostatic induction to the gate electrodes individually according to the surface potentials at multiple locations of the charge latent image forming member where charge latent images corresponding to information signals to be recorded/reproduced are formed. The output signals of the plurality of floating gate field effect transistors for detecting the applied voltage and the plurality of floating gate field effect transistors described above are sequentially extracted so as to be arranged in series on the time axis and are converted into time series signals. A charge latent image comprising a means for outputting the output signal and a means for selectively controlling the gate potential of the floating gate field effect transistor for voltage detection from which the output signal is selected by means of an externally applied voltage. A recording/reproducing device (9) using a latent charge image according to any one of claims 1 to 7, wherein the recording/reproducing device (8) is constructed by highly integrating a detection head including a floating gate field effect transistor using integrated circuit technology. 8. A recording/reproducing device using a latent charge image according to claim 1, further comprising a detection head including a field effect transistor having a floating gate covered with an insulating layer.