JPH01283573A - Recording and reproducing device using charged latent image - Google Patents

Abstract

PURPOSE:To easily attain a detected voltage output in right condition by alternately reproducing a charged latent image in first areas where said image corresponding to an information signal of a reproduced target shows a surface potential distribution and second areas where a prodetermined surface potential distribution is shown, and resetting one type of prescribed areas. CONSTITUTION:The title device is provided with a field effect trangister for detecting a voltage having a gate electrode given with a voltage generated through electrostatic induction according to the surface potential of a charged latent image forming member CHL where the charged latent image is formed, corresponding to the information signal of the reproduced target. The reproduction of the charged latent image from the record reproducing area RZ of the charged latent image forming member, is alternately carried out in the first areas TR1, TR2... where said image corresponding to the information signal of the record reproduced target shows the surface potential distribution and in the second areas OP1, OP2... where the predetermined surface potential distribution is shown and the reset is carried out in one prescribed areas among the first areas and the second areas. Thus, a voltage to correspond with the surface potential distribution of a body to be detected is detected.

Description

Detailed Description of the Invention (Industrial Field of Application) The present invention is directed to a charge latent image formed by electrostatic induction in response to the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. A voltage detection field effect transistor in which a voltage is applied to the gate electrode, and a leakage current between the drain electrode and gate electrode of the voltage detection field effect transistor in the capacitance of the input side circuit of the voltage detection field effect transistor. The present invention relates to a recording/reproducing device using a charge latent image and an imaging type recording/reproducing device, which are configured to include a reset means for discharging the charges charged by the charge latent image.

(Prior Art) Information signals are recorded by forming a charge latent image corresponding to the information (No. 8) to be recorded and reproduced on a charge latent image forming member. By detecting the voltage generated by static WIM conduction from the surface potential due to the charge latent image formed on the charge latent image forming member, the voltage detection electrode is brought close to the surface of the detection object). When attempting to reproduce an information signal recorded in the above manner, a conventionally known method for detecting the surface potential of the object to be detected can be used.

However, in general, the voltage detection electrode circuit in the method of detecting the surface potential of the object to be detected has a very high impedance, so the voltage is extracted from the voltage detection electrode via an impedance conversion circuit. This is normally done.

As the impedance conversion circuit described above, a circuit using a field effect transistor as an active element can also be used, but as is well known, a field effect transistor has a leakage current from the drain electrode to the gate electrode. Then, the leakage current charges the capacitance of the input side circuit of the gate electrode of the field effect transistor, and the potential of the gate electrode gradually rises accordingly.

Therefore, when the voltage generated by electrostatic induction corresponding to the surface potential of the object to be detected is extracted through an impedance conversion circuit using a field effect transistor, the detection operation takes a relatively long time. If the detection is carried out over a long period of time, the problem is that the detected voltage value will be inaccurate, and if the detection time is longer, the output signal will become saturated and the surface potential of the object to be detected will be reduced. Detection becomes impossible.

For this reason, in an impedance conversion circuit using a field effect transistor, it is necessary to discharge the charge accumulated in the capacitance of the input side circuit of the gate electrode of the field effect transistor by leakage current between the drain electrode and the gate electrode. Conventionally, a reset means has been used to discharge the charge accumulated in the capacitance of the input side circuit of the gate electrode of a field effect transistor by the leakage current between the drain electrode and the gate electrode, but this method has the above-mentioned problems. The existence of this and the means for solving it are the same in the recording and reproducing apparatus using a charge latent image of the present invention, in which recorded information is reproduced by means similar to the detection of the surface potential of the detected object. .

FIG. 19 is a block diagram of an example configuration of an electric signal generating device corresponding to the surface potential distribution proposed by the applicant company, which is illustrated to explain the problem in the recording/reproducing device using a charge latent image according to the present invention. In FIG. 19, ○ indicates an object to be detected, and EDA indicates a detection head configured, for example, as shown in FIG. 11,
The detection head EDA has its voltage detection electrode ED.
The distance between the detection target 0 and the surface of the detected object 0 is changed between two predetermined positions set in space.

In FIG. 19, the detection head EDA is a displacement driving bag! B
It is connected to the movable part 26 in the CM by a connecting member U. 25 is a movable part 26 in the displacement drive device BGM
is the center holder. As the displacement driving bag [BGM, for example, a displacement driving device configured using a voice coil motor, an electrostrictive element, or other suitable electro-mechanical conversion element is used, and the above-mentioned displacement driving bag flt
BGM is supplied with the drive signal generated by the signal generator SG, so that the voltage detection electrode ED in the detection head EDA is positioned on the surface of the detected object ○, as shown in the detection head EDA at the solid line position in FIG. Alternatively, as in the detection head EDA at the dotted line position in FIG. position or displace the detection head EDA between two predetermined positions in space. 27 is a permanent magnet that applies a magnetic field to the moving coil in the case of the displacement drive bag fiBCM.

As the detection head EDA in which a plurality of voltage detection electrodes ED, ED, . In FIG. 11, EDl, ED2. ED3・
...EDn is a voltage detection electrode, and these voltage detection electrodes EDI, ED2 . ED3...EDn are each an individual connection line Q1. Q2. Q3...an
Field effect transistor DPI for voltage detection.

DF2. DF3... Field effect transistors RFL, RF2゜RF3, which are connected to the gate electrode of DFn and are used as reset switching means.
...Connected to the drain electrode of the corresponding one in RFn.

Each field effect transistor RFI, RF2 . used as the above-mentioned reset switching means. RF3...R
The gate electrodes of Fn are commonly connected to the reset pulse input terminal '20, and the gate electrodes of each field effect transistor RFI, RF2 . The source electrodes of RF3 to RFn are commonly connected to a power source Vss that supplies a reference voltage to be applied to the voltage detection electrode and the gate electrode of the voltage detection field effect transistor during the reset operation.

In addition, each of the voltage detection field effect transistors D
Fl, D F2. The drain electrodes of D F3-D Fn are commonly connected to the operating power supply V, and a constant voltage is supplied thereto, and each of the voltage detection field effect transistors DPI, DF2, DF3, . . .・D
The source electrodes of Fn are connected to individual switching field effect transistors SFI, SF2゜SF3...SF.
n, and is further connected to the drain electrode of the corresponding switching field effect transistor SF! ,, SF2°SF3...SFn are connected in common to the output terminal 10. RΩ in the fJS11 diagram is the load resistance.

The individual switching field effect transistor S
Fl, S F2. Each gate fill in SF3-8Fn receives switching)f pulses PL, P2. P3...Pn are supplied, and the switching pulses PI, P2. As is clear from the waveform diagram illustrated in FIG. 13, P3...Pn is the clock signal Pc shown in FIG. 13(a) that is supplied to the clock terminal 8 of the shift register SR. Therefore, as illustrated in (b) to (d) of FIG. 13, the signals are sequentially outputted from the shift register SR as P1→P2→P3→... on the time axis.

The above-mentioned individual switching field effect transistor S
Fl, S F2. One selected one of SF3-SFn is sequentially turned on on the time axis.

So each separate connection 1iA Q1. Q2
．． A3...Qn causes voltage detection field effect transistors DFl, DF2 . A plurality of voltage detection electrodes EDI and ED2 connected to the gate electrodes of DF3-DFn
．． ED3...The voltage corresponding to the surface potential of each of the plurality of points on the object to be detected, which is generated at EDn, is generated by the plurality of voltage detection field effect transistors DFl, D described above.
F2. From the source side of DF3 to DFn, respective corresponding switching field effect transistors S Fl
, SF2. Since the switching pulses Pi, P2 . Individual switching field effect transistors S Fl, S are turned on one after another as F3... are sequentially output.
F2. From the source side of SF3-SFn,
Individual voltage detection electrodes E Di are formed by electrostatic induction in correspondence with the surface potential of each of the plurality of locations on the object to be detected.
, E D2. A voltage corresponding to the voltage generated at E D3-E Dn is sent out to the output terminals in series on the time axis.

Therefore, for example, as shown in FIG. 12, a plurality of voltage detection electrodes ED1. ED2. The detection head and the object to be detected, which are arranged so that ED3-EDn are arranged in one straight line, are connected to the plurality of voltage detection electrodes EDI, E as described above.
D2. When E D3-E Dn are moved relative to each other in the direction perpendicular to the direction in which they are aligned, a time-series electrical signal corresponding to the two-dimensional charge image formed on the object to be detected is output. It will be sent to terminal 10.

The above-mentioned detection head shown in the twelfth figure includes a plurality of voltage detection electrodes EDI, ED2 . ED3-EDn and connection line Ql-Q
This embodiment has a configuration in which the elements such as n are formed on the base body BP by a well-known thin film technique.

Now, as shown in FIG. 19, the detection head EDA is placed close to the upper surface of the detected object 0.

As explained with reference to FIG.
The switching pulse PL from P2. Individual switching field effect transistors S Fl are turned on one after another even though F3... are outputted one after another.
, SF2. From the source side of SF3-5Fn.

The static 11! corresponds to the surface potentials of individual locations aligned in the X direction at multiple locations on the object to be detected. Individual voltage detection electrodes EDI, ED2. ED3...EDn
The voltages corresponding to the voltages generated at
The individual voltage detection electrodes E Di, E D2. ED3...A reset pulse Pr is applied to the input terminal 20 every time one block of time-series signals in which voltages corresponding to all the voltages generated at EDn are arranged in series on the time axis is obtained. When the above reset pulse is supplied, all the voltage detection electrodes E
D1, ED2. The potentials of ED3...EDn and the potentials of the gate electrodes of all the voltage detection field effect transistors DFI, DF2... are set to the reset power supply voltage Vss.

The detection head EDA is reset as described above when it finishes outputting one block of time-series signals from the detected object O in the arrow X direction shown in FIGS. 14(a) and 14(b). , the detected object O and the detection head EDA are in the 14th
After being relatively moved by a predetermined distance in the direction of arrow Y in (a) of the figure, a time series signal of one block is output from detected object 0 in the direction of arrow X at the new position. , and when the output is finished, it is reset as described above. By repeating this process, an output signal corresponding to the two-dimensional charge image on the surface of the object to be detected ○ is sent from the output terminal IQ of the detection head EDA. It will be done.

The A-A line, B-■3 line, C-C line, D-D line, etc. shown in FIG. 14(b) are the positions of the detected object O in the Y direction. Sequential one by head EDA
This is an example of a line in the X direction that generated a block signal.

To detect the surface potential of the detected object O, the voltage detection electrode ED is brought close to the surface of the detected object O, and the voltage detection electrode ED is moved by electrostatic induction based on the surface potential of the detected object 0. When the generated voltage is detected, the output voltage Vout sent from the source electrode side of the voltage detection field effect transistor DF to the output terminal 10 of the detection head EDA is equal to the output voltage Vout from the gate i of the voltage detection field effect transistor DF. ′!
Assume that the value of the D capacitance of the pole input @ road side is Cin, and.

If the capacitance between the surface of the detected object O and the voltage detection electrode ED is C, and the surface potential of the detected object 0 is Vf, then as shown in the equation shown in FIG. expressed.

Furthermore, since the voltage detection electrode circuit configured as described above has a very high impedance, when the voltage of the voltage detection electrode ED is extracted, it is extracted through an impedance conversion circuit. Also in the detection head illustrated in FIG. 11, the voltage detection electrode ED (
Save the writing of subscripts! 8) to the gate electrode of the voltage detection field effect transistor DF (subscript omitted),
Although the detection voltage is obtained as a source follower output, if the impedance conversion circuit used to take out the voltage of the voltage detection electrode ED is configured using a field effect transistor, ,Wi
The leakage current from the drain electrode to the gate electrode of the field effect transistor charges the capacitance of the input side circuit of the gate electrode of the field effect transistor, and the potential of the gate electrode gradually rises accordingly. Since it is superimposed on the detected voltage value generated by zero electric induction corresponding to the surface potential of the object to be detected, leakage current between the drain electrode and the gate electrode is added to the capacitance of the input side circuit of the gate electrode of the field effect transistor. Resetting means are applied to discharge the accumulated charge.

As mentioned above, the Wp capacitance of the input side circuit of the gate electrode of the field effect transistor is charged by the leakage current between the drain electrode and the gate electrode of the field effect transistor, so that the potential of the gate electrode gradually increases over time. The state of going and 1! The capacitance of the input side circuit of the genit electrode of the field effect transistor is the drain am and the gate ft.
The state in which the electric charge charged by the leakage current between the electrodes is discharged by the reset means is as illustrated in FIG. 16, and in (a) of FIG. 16, S W r
is a switch used as a reset means,
In addition, Cin is a voltage detection field effect transistor DF
is the capacitance of the gate electrode on the input circuit side, and i is the leakage current between the drain electrode and the gate electrode of the voltage detection field effect transistor DF. When the switch SWr in (a) is turned on (reset state), the capacitance Cin on the input circuit side of the gate electrode of the voltage detection field effect transistor DF is
After discharging the charges accumulated in the switch SW
When r is turned off, the capacitance 1ci on the input vJN side of the gate electrode of the voltage detection field effect transistor DF
This shows a state where n is charged again by the leakage current i between the drain electrode and the gate electrode, and the potential of the gate electrode of the voltage detection field effect transistor DF is gradually increased.

18(a) and (b) show that the capacitance Cin on the input circuit side of the gate electrode of the voltage detection electrode circuit transistor DF is charged by the leakage current i between the drain electrode and the gate electrode as described above. The gate of the voltage detection field effect transistor DF caused by (For example, the position of the A-A line in FIG. 14(b), or the location indicated by the arrow indicating reset in FIG. 18(a)). In FIG. 18 (a), 0 is a detected object, and the ED shown above the detected object 0 is a voltage detection electrode, and is shown below the detected object 0. The graph shown shows the distribution state of the surface potential of the object O to be detected.

FIG. 18(b) shows the detection of the surface potential of the detected object O having the surface potential distribution as shown in FIG. 18(8). After the voltage detection electrode ED shown above the body 0 is reset at the position indicated as reset in the figure (the position where the reset pulse Pr is displayed in FIG. 18(b)), This shows how the detected voltage changes on the time axis when the voltage detection electrode ED is moved from left to right. is a code to indicate the correspondence between mutually corresponding parts.

The position where the reset operation was performed on the voltage detection electrode ED in FIG. 18(a) corresponds to the position of the detection head EDA on the line A-Afi in FIG. 14(b). The potential of the detection electrode ED is the 14th
(CQ) in Figure 18) and (b) in Figure 18. It will be set to the reset voltage Vss.

As described above, the reset operation in response to the rise in potential of the gate electrode of the voltage detection field effect transistor 1--transistor DF is performed when the voltage detection electrode ED is located in a portion of the detected object O that is not affected by the electric field of the charge image on the surface. After the voltage detection electrode ED is set to the reset voltage Vss by the reset operation, the voltage detection ft1 electrode E
D is moved to the detection position of the surface potential based on the charge image of the object to be detected ○, and the voltage detected by the voltage detection electrode ED is the charge image of the object to be detected 0 shown in (a) of FIG. The surface potential corresponds to the surface potential shown in FIG. 18(b).

However, the reset operation in response to the potential rise of the gate electrode of the voltage detection field effect transistor DF is
A state in which the voltage detection electrode ED is located in a part where the electric field of the charge image on the surface does not reach (for example, (in Fig. 14)
(b) at the position of the line A-A, or the location indicated by the arrow indicating reset in (a) of Fig. 18), the above-mentioned reset operation Since the detection head EDA is performed with the detection head EDA separated from O, the above-mentioned reset operation is performed only once after the detection of all the charge images on the object to be detected O is completed. Since it takes a relatively long time to detect all the charge images on the detection object 0, during that time the static 1! on the input circuit side of the gate electrode of the voltage detection field effect transistor DF is When the capacitor Cin is charged by the leakage current i between the drain electrode and the gate electrode, the voltage detection force may become saturated.

In order to solve the above problem, the reset operation in response to the rise in the potential of the gate electrode of the voltage detection field effect transistor DF described above, for example, BB, 1! in FIG. , C-CM, and D-D lines, each time the detection of the surface potential of the object to be detected 0 is completed.

However, as mentioned above, the reset operation in response to a rise in the potential of the gate electrode of the voltage detection field effect transistor DF is 1, for example, as shown in the lines BB, C-C, and DD in FIG. 14(b). If the detection is performed in a part where an electric field exists due to the surface potential distribution of the object to be detected 0, the detected voltage value at the position of each line such as the C-C line and D-D@ in (b) of FIG. However, the problem arises that the voltage value does not correspond to the surface potential of that part, but is the difference between the voltage value detected before the reset and the voltage value detected after the reset. .

(d) and (e) in Figure 14 and (c) and (d) in Figure 18.
) is a diagram used to explain the above-mentioned problem, and (d) of FIG. 14 shows the detection voltage output in the X direction at the B-B line position of the detected object 0 by the detection head EDA, and , the curve shown by the solid line in FIG. 14(e) is reset after the detection head EDA finishes detecting the potential distribution in the
Next, the detection head EDA detects C-C in the detected object 0.
This is the detected voltage output when the potential distribution in the X direction is detected at the line position, and the detected voltage output shown by the solid curve in (e) of FIG. The voltage distribution shown by the dotted line in (8) of FIG. 14, which corresponds to the actual potential distribution at the -C line position, is not shown.

That is, the detected voltage output shown by the solid curve in FIG. 14(e) corresponds to the actual potential distribution at the C-cm position of the detected object Q (θ) in FIG.
The voltage distribution is shown by a dotted line in the figure, and the detected voltage is shown in (d) of FIG. This is the voltage difference between the output and the output.

(Q) and (d) in FIG. 18 show that the capacitance Cin on the input circuit side of the gate electrode of the voltage detection field effect transistor DF is charged by the leakage current i between the drain electrode and the gate electrode, as described above. A state in which the voltage detection electrode ED is located in the part of the detected object 0 where the electric field of the charge image on the surface reaches (For example, the location indicated by the position of point a in (Q) of FIG. 18). In CQ of FIG. 18, 0 is the detected object, and the The ED shown above the detected object O is a voltage detection electrode, and the graph shown below the detected object 0 described above shows the distribution state of the surface potential of the detected object O. There is.

FIG. 18(d) shows the detection of the surface potential of the detected object 0 having the surface potential distribution as shown in FIG. 18(Q). The voltage detection electrode FD shown above the body O is reset at position a where reset is indicated in the figure (in (d) of Fig. 18, the reset pulse Pr is indicated [a)]. CG>, (d) in Fig. 18. The symbols a and b are symbols for indicating the correspondence between mutually corresponding parts.

The position 91a where the reset operation is performed on the voltage detection electrode ED in FIG. 18(c) corresponds to the position of the detection head EDA in FIG. 14(b), for example, on line MB-B, and the reset operation Therefore, the potential of the voltage detection electrode ED is set to the reset voltage Vss shown in FIG. 14(d) and FIG. 18(d).

Therefore, as mentioned above, the reset operation in response to the rise in the potential of the gate electrode of the voltage detection field effect transistor DF is as follows.
This is performed while the voltage detection electrode ED is located in the part of the detected object 0 where the electric field of the charge image on the surface extends, and after the voltage detection electrode ED is set to the reset voltage Vss by the reset operation. When the above reset operation is canceled and the voltage detection electrode ED is moved to the next detection position of the surface potential based on the charge image of the object to be detected ○, the potential distribution detected by the voltage detection electrode ED is as follows. 18th
The voltage distribution shown by the dotted line curve in FIG. 18(d), which corresponds to the surface potential due to the charge image of the detected object 0 shown in FIG. The voltage at point a where the reset voltage is set to the reset voltage Vss appears as a voltage distribution as shown by the solid curve in FIG. 18(d).

17(a) shows the state when the reset operation is performed at point a on the detected object 0 in FIG. 18(c), and FIG. 17(b) shows the state at point a of the detected object 0 in FIG. The figure shows a state in which the reset operation is canceled after the reset operation is performed at point a on the detected object O in (c) of the figure. If we look at the operation mode shown in FIG. 17 (a) and (b), we can see that the voltage detection field effect transistor D
The reset operation in response to the rise in potential of the gate electrode of F is performed with the voltage detection electrode ED located in the part of the detected object 0 to which the electric field of the charge image on the surface extends, and the voltage detection electrode ED is After the reset voltage Vss is set, the above-mentioned reset operation is canceled.

Next, when the voltage detection 1iED is moved to the next detection position of the surface potential based on the charge image of the detected object 0, the voltage detection 11! The potential distribution detected by the pole ED is
It can be easily understood that this appears as a voltage distribution as shown by the solid line curve in (d) of the figure.

In the electric signal generation device corresponding to the previously proposed surface potential distribution shown in FIG. The voltage detection field effect transistor DF is configured to be changed between two predetermined positions.
For example, the reset operation for the potential rise of the gate electrode due to the leakage current between the drain and gate in
The position of each line such as B-Bfi, C-C line, and D-D line in (b) of the figure ↓The detection voltage is The timing of voltage detection, the timing of starting the reset operation, and the timing of canceling the reset operation when the voltage is not saturated are determined in relation to the above-mentioned interval between the voltage detection electrode ED and the detected object O. The voltage detected at that time is set as shown in the figure, so that the voltage detected at that time corresponds to the surface potential distribution of the object to be detected. The electric signal generator corresponding to the previously proposed surface potential distribution is, for example, the 14th
Each time the detection of the surface potential of the object to be detected 0 at the position of each line such as the line B-B, line C-C, l, and line D-D in (b) of the figure is completed, the detection voltage is The timing of voltage detection, the start of the reset operation, and the timing of the cancellation of the reset operation when the voltage is not saturated are determined by the voltage detection electrode E shown in (,) in FIG.
20th in relation to the change in the distance between D and the detected object O
When implemented with the settings shown in (b) and (c) of the figure, the displacement drive bag shown in FIG. 19! T! B
The GM detects the detection head EDA at the solid line position in FIG. 19 by the drive signal generated by the signal generator SG.
When the voltage detection electrode ED in the detection head EDA is brought close to the surface of the detected object O, a voltage generated on the voltage detection electrode ED due to electrostatic induction corresponding to the surface potential of the detected object 0 is so that it is output, and
Displacement yJA′#J device! B GM uses the drive signal generated by the signal generator SG to cause the m-pole ED for voltage detection in the detection head EDA to be sufficiently separated from the surface of the object to be detected O, as shown in the detection head EDA at the dotted line position in FIG. In other words, the distance between the voltage detection electrode ED and the detected object O is determined by the capacitance value C in the formula shown in FIG.
is changed until it becomes much smaller than the value of Cin, so that the voltage generated by electrostatic induction on the voltage detection electrode ED corresponding to the surface potential of the detected object O is made sufficiently small. In this state, the reset operation as described above is performed, and the electric signal generating device corresponding to the previously proposed surface potential distribution shown in FIG. 19, for example, the line BB in FIG. The timing of voltage detection when the detection voltage is not saturated by being performed every time the detection of the surface potential of the detected object 0 at the position of each line such as C-C line and D-Dli is completed. The timing of starting the reset operation and canceling the reset operation is
The settings are made as shown in (d) and (e) of Fig. 20 in relation to the change in the distance between the voltage detection electrode ED and the detected object ○ shown in (,) of Fig. 20. When implemented, the displacement drive device BGM shown in FIG. 19 moves the detection head like the detection head EDA at the solid line position in FIG. 19 by the drive signal generated by the signal generator SG. After the above-described reset operation is performed in a state in which the voltage detection electrode ED in the EDA is brought close to the surface of the detected object O, the reset operation is canceled, and then the displacement drive device BGM is activated. Using the drive signal generated by the signal generator SG, the distance between the voltage detection piezoelectric tMED and the detected object 0 is determined by the equation shown in FIG. is changed until the capacitance value C of C becomes much smaller than the value of Cin, and a voltage generated by electrostatic induction on the voltage detection electrode ED corresponding to the surface potential of the detected object 0 becomes sufficient. Fit for voltage detection in the detection head EDA to a state where a small voltage is made! In a state where the iED is sufficiently separated from the surface of the object to be detected O, the detection head EDA is
When the reset operation is canceled when the voltage detection electrode ED is close to the surface of the detected object O,
A voltage generated at the voltage detection electrode ED due to electrostatic induction is outputted in correspondence with the surface potential of the electrode.

The arrow U in FIG. 19 is for showing how the distance between the voltage detection electrode ED and the detected object 0 changes,
In addition, (b) and (d) in (b) to (e) of FIG.
) is a voltage detection piezoelectric (7Bo) located at a predetermined position where the distance between the voltage detection electrode ED and the detected object O is small, and the period in which the voltage detection piezoelectric 7Bo is positioned and the distance between the voltage detection electrode ED and the detected object 0 is This is an example in which the entire period in which the voltage detection electrode ED is located at a predetermined position that is made larger is used for the voltage detection operation and the reset operation.

In (c) and (e) in (b) to (e) of FIG. 20, the voltage detection electrode ED is located at a predetermined position where the distance between the voltage detection electrode ED and the detected object O is small. The voltage detection operation and the reset operation are performed only during a part of the period and a part of the period in which the voltage detection electrode ED is located at a predetermined position where the distance between the voltage detection electrode ED and the detected object O is large. This is an example of a case where

The electrical signal generator corresponding to the previously proposed surface potential distribution shown in FIG. 19 is, for example, B-B in FIG.
a, c-cm, D-D! (7) The timing of voltage detection and the start of the reset operation when the detection voltage is prevented from being saturated by being performed every time the detection of the surface potential of the detected object 0 at the position of each line is completed. The timing of canceling the operation to 1 is shown in (a
) in FIG. 20, (b) and (Q
) and (a) in Figure 20.
(d) of FIG. 20 in relation to the manner in which the distance between the voltage detection electrode ED and the detected object 0 changes as shown in FIG.

The polarity of the output voltage will be reversed in the case of setting and implementing as shown in (e), but in any case, this first
In the electric signal generating device corresponding to the surface potential distribution shown in FIG. 9, a voltage corresponding to the surface potential distribution of the object to be detected is detected.

(Problems to be Solved by the Invention) Until now, in the electric signal generating device corresponding to the previously proposed surface potential distribution shown in FIG.
As can be seen from the explanation with reference to FIG. 8, the distance between the voltage detection electrode ED in the detection head EDA and the surface of the detected object O is.

For example, the reset operation is performed in response to an increase in the potential of the gate electrode due to a leakage current between the drain and gate of the field effect transistor DF for voltage detection. , is performed every time the detection of the surface potential of the object to be detected 0 at the position of each line such as line B-B and line C-C-D-D in FIG. 14(b) is completed. The timing of voltage detection, the timing of starting the reset operation, and the timing of canceling the reset operation when the detection voltage is not saturated are related to the above-described distance between the voltage detection electrode ED and the object to be detected O. By setting the settings as shown in FIG. 20, a detection voltage corresponding to the surface potential distribution of the object to be detected can be obtained. was solved, but
As can be seen from the above explanation, in the electric signal generator corresponding to the previously proposed surface potential distribution shown in FIG. 19,
In implementing it, it is necessary that the distance between the voltage detection piezoelectric JIED in the detection head EDA and the surface of the detected object 0 is changed between two predetermined positions set in space. Therefore, it is necessary to use a mechanical vibration mechanism, which has the disadvantage of requiring a large-scale configuration, and also causes problems such as generation of vibration and noise. With such a configuration, it has been desired to develop a device that does not have the above-mentioned drawbacks.

(Means for Solving the Problems) The present invention provides a static 1 t
A voltage detection field effect transistor in which the voltage generated by the tFJ conduction is applied to the gate electrode, and a drain electrode/gate of the voltage detection field effect transistor in the capacitance of the input side circuit of the voltage detection field effect transistor. In a charge latent image recording and reproducing apparatus that includes a reset means for discharging the charge charged by a leakage current between 'e#@, The reproduction operation is sequentially and alternately carried out on a first region showing a surface potential distribution according to the charge N image corresponding to the information signal to be recorded and reproduced, and a second region showing a predetermined constant surface potential distribution. a recording/reproducing device using a charge latent image, comprising means for causing the reset operation to be performed in a predetermined one of the first area and the second area; and a voltage detection field effect transistor in which a voltage generated by static ttt induction is applied to a gate electrode according to a surface potential of a charge latent image forming member on which a charge latent image corresponding to optical image information to be recorded and reproduced is formed. , the drain electrode/gate t! of the voltage detection field effect transistor is added to the capacitance of the input side circuit of the voltage detection field effect transistor. ! In an imaging type recording and reproducing device using a charge latent image, which includes a reset means for discharging the charge charged by a leakage current between electrodes, a recording and reproducing object is placed between the subject and the charge latent image forming member. The first diagram shows the surface potential distribution due to the charge latent image corresponding to the information signal of
and a second region exhibiting a predetermined constant surface potential distribution,
Further, the reproducing operation of the charge latent image from the recording and reproducing area of the charge latent image forming member is performed in a predetermined manner with respect to the first area showing the surface potential distribution due to the charge latent image corresponding to the IIE recording/reproducing main reproduction target information signal. means for performing the reset operation in a predetermined one of the first region and the second region; an imaging type recording and reproducing device using a charge latent image, which is equipped with a means for making a charge latent image appear; A field effect transistor for voltage detection in which a voltage generated by induction is applied to the gate electrode, and a drain electrode and a gate electrode of the field effect transistor for voltage detection are connected to the capacitance of the input side circuit of the field effect transistor for voltage detection. In a recording/reproducing device using a charge latent image, the device includes a reset means for discharging charges accumulated by leakage current between the charges.

a first region showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and played back in the recording/playback area of the charge latent image forming member; and a second region showing a predetermined constant surface potential distribution. means for sequentially performing a detection operation and a reset operation for one surface type distribution for each region;

The present invention provides a recording and reproducing apparatus using a latent charge image, which includes means for obtaining an output signal by subtracting the detection force in the first area and the detection force in the second area.

(Embodiments) Hereinafter, specific details of the recording/reproducing apparatus using charge latent images of the present invention will be described in detail with reference to the accompanying drawings. 1st
The figure shows the correspondence relationship between the recording and reproducing area of the charge latent image forming member and the detection head to explain the reproducing operation by the detection head with respect to the recording and reproducing area of the charge latent image forming member in the recording and reproducing apparatus using the charge latent image of the present invention. In FIG. 1, EDA is a detection head, and this detection head EDA performs main scanning in the X direction in FIG. 1 and sub-scanning in the Y direction in FIG. 1. The detection head EDA has the configuration described above with reference to FIGS. 11 to 13 in connection with the previously proposed device shown in FIG. 19. may be used.

In FIG. 1, RZ 4t is an example of the recording and reproducing area in the charge latent image forming member (indicated by the symbol CHL in FIG. 2). , T.R.I.

TR2...like TR(TRI, 'rRz...
like.

If you want to display each part without distinguishing them,
Each area indicated as (subscripts 1 and 2 is omitted) indicates the surface potential distribution due to a charge latent image corresponding to the information signal to be recorded and reproduced in the recording and reproduction area RZ of the charge latent image forming member CHL. Also, in the recording/reproducing area RZ of the charge latent image forming member CHL, 0P (OPI, OF2, etc.)
When displaying each part without distinguishing them, as in F2..., the subscripts 1 and 2 are omitted.)
Each region indicated as is a second region exhibiting a predetermined constant surface potential distribution in the recording/reproducing region RZ of the charge latent image forming member CHL.

In the charge latent image recording and reproducing apparatus of the present invention, the charge latent image is recorded as a charge image in the recording and reproducing region RZ of the charge latent image forming member CHL where the charge latent image corresponding to the information signal to be recorded and reproduced is being recorded. If the regeneration of the information signal is carried out.

The detection head EDA used to detect the charge image in the recording and reproducing area RZ of the charge latent image forming member CHL detects a charge latent image corresponding to information No. 48 to be recorded and reproduced in the recording and reproducing area RZ of the charge latent image forming member CHL. A first region TR exhibiting a surface potential distribution according to.

A second region O exhibiting a predetermined constant surface potential distribution
When the read operation is performed in one predetermined area of the first area TR and the second area oP, the read A reset operation is performed in the other area where no operation was performed.

The above point will be specifically explained as follows. That is, for example, when reading an information signal recorded as a charge image in the recording/reproducing area RZ of the charge latent image forming member CHL, the detection head EDA detects the first signal in the recording/reproducing area RZ of the charge latent image forming member CHL. Area TRI, TR2・
When the read operation is performed in ..., the other area where the read operation was not performed,
In other words, the reset operation is performed in the second areas OPI, OP2, etc., and contrary to the above case, for example, a charge image is formed in the recording/reproducing area RZ of the charge latent image forming member CHL. Upon reading out the information signal recorded as
When a read operation is performed in I, P2, . . . , a reset operation is performed in the other region where the read operation was not performed, that is, the first region TRI, TR2, . It will be done.

Then, the recording/reproducing area R of the latent image forming member CHL
The reading operation and resetting operation of the information signal recorded as a charge image on the charge latent image forming member CHL are carried out by the detection head EDA in the manner described above, that is, the detection head EDA performs the readout operation and the reset operation of the information signal recorded as a charge image on the charge latent image forming member CHL in the first recording/reproducing area RZ. Area TR
I, TR2... and the second area OP1. OP2...
A read operation is performed in a predetermined area of one of the.

When the reset operation is performed in the other area where the read operation was not performed, the 19th
The information signal read operation and reset operation using a charge image are similar to the information signal read operation and reset operation using a charge image in the previously proposed device described with reference to the figures.
This can be done well without vibrating the detection head EDA.

As described above, the reading operation by the detection head EDA is performed in the first areas TRI, TR2, . ..., the reading operation by the detection head EDA is performed in the second areas OPI, OP2, etc. in the recording/reproducing area RZ of the charge latent image forming member CHL, and the reset operation is performed in the first area I. ! 1ITR1, TR2, etc., the polarity of the detection signal output from the detection head EDA is reversed, but this point is the same as that described for the already proposed device shown in @19.

As described above, in the apparatus of the present invention, the charge latent image forming member CFi
Charge latent image forming member C used when reading information signals recorded as charge images in the recording/reproducing area RZ of L
The reproduction operation of the charge latent image from the recording and reproduction area of the HL creates a predetermined constant surface potential distribution between the first region TR showing the surface potential distribution due to the charge latent image corresponding to the information signal to be recorded and reproduced. The second territory f! j, OP, and one predetermined region of the first region TR and second region OP described above.
・The reset operation is performed at a first region showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording/reproducing region RZ of the charge latent image forming member CHL. The two regions, the first region TR and the second region OP, in which the TR and the second region OP exhibiting a predetermined constant surface potential distribution are sequentially and alternately arranged, for example, ( 1) The information signal to be recorded and reproduced is set as a charge image in the recording and reproduction areas R and Z of the charge latent image forming member CHL.2! (2) Reproducing the information signal to be recorded and reproduced recorded as a charge image in the recording and reproduction area RZ of the charge latent image forming member CHL. The two regions are formed during the playback operation when
Or, for example, (3) the information to be recorded and reproduced in the recording and reproduction area RZ of the charge latent image forming member CHL (depending on the configuration of the recording and reproduction area RZ itself of the charge latent image forming member CHL in which the number i is to be recorded as a charge image). In other words, two regions are formed.

In FIG. 2, an optical image to be recorded and reproduced is recorded as a charge image on a recording medium D (shown as a recording medium disc in the example shown in the second diagram) in the recording/reproducing area RZ of the charge latent image forming member CHL. In the recording/reproducing apparatus configured as above, an optical mask member PMP having a predetermined pattern of light transmitting portions and light blocking portions is disposed in the optical path between the subject Q and the charge latent image forming member CHL, Charge latent image forming member C
A first region T showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording and reproduction region RZ of the HL.
An example of a configuration of a recording/reproducing device in which a state in which R and second regions ○P showing a predetermined constant surface potential distribution are sequentially and alternately arranged is obtained during a recording operation. FIG.

In FIG. 2, D is an electrode Et made of a conductive material.
and a charge latent image forming member CHL.
By rotating in the direction of arrow R in the figure, the subject Q
The optical image and the corresponding charge image are in the regions RZI, RZ2...
The data are recorded sequentially.

Recording medium holiday I shown in the second illustration! In ID, the electrode Et also serves as the substrate of the recording medium disk. Further, the charge latent image forming member CH in the recording medium disc
As L, a material layer having high insulating properties that can hold the charge image formed thereon for a long time, for example, a material layer configured as an insulating layer made of a polymer material can be used. Note that, of course, the form of the recording medium is not limited to a rotating disk.

In the recording/reproducing apparatus shown in FIG.

The light from the subject is passed through the field image lens (2), the glass substrate BP, the transparent [44Etw, and the optical mask PM having a predetermined pattern of light-transmitting parts and light-blocking parts.
The image is formed on the photoconductive layer member PCE in an optical image-to-charge image conversion member which is constructed by laminating P and the photoconductive layer member PCE. The optical mask PMP having a predetermined pattern of light transmitting portions and light blocking portions described above may be provided at any portion in the optical path between the subject 9 and the photoconductive layer member PCB.

Since a constant voltage is applied from a power supply (not shown) between the electrode Etw in the optical image/charge image conversion member and the ftt pole Et in the recording medium disk, the optical image of the subject Q is Imaged photoconductive layer member PCE
The electrical resistance of is changed in correspondence with the optical image of the subject a formed thereon.

Therefore, on the end face of the optical image-charge image conversion member, that is, the end face of the photoconductive layer member PCE, an optical image of the subject Q is transmitted through an optical mask PMP having a predetermined pattern of light transmitting portions and light blocking portions. A charge image pattern corresponding to the optical image obtained appears on the charge latent image forming member CHL on the recording medium disk, and an optical image of the subject q is formed on the charge latent image forming member CHL on the recording medium disk. A charge image corresponding to the optical image transmitted through the mask PMP is formed.

As described above, when the recording operation is being performed on the recording/reproducing area RZ of the recording medium, the electric charges on the end face of the optical charge image converting member, that is, the end face of the photoconductive layer member PCE and the recording medium disk. The surface of the latent image forming member CHL may be in close contact with the surface of the latent image forming member CHL, or may be in a state where both sides are facing each other with a small distance between them. RZI
After the recording operation for the primary recording/reproducing area R, Z
As when the recording medium disk is rotated to position 2,
When the recording medium disk is moved from one recording/playback area to the next recording/playback area.

The end face of the optical image/charge image converting member, that is, the end face of the photoconductive layer member PCE, and the surface of the charge latent image forming member CRT= on the recording medium disk are separated from each other.

The optical mask member PMP used in the recording/reproducing apparatus shown in FIG. 2 described above has a structure, for example, as a part of it is shown in a plan view in FIG. 4(a). In the optical mask member PMP shown in FIG. 4(a), the portion at 2°2... is a light transmitting portion, and the portion at 3,3... is a light blocking portion. (for example, the black part).

A photoconductive layer member PC in an optical image-to-charge image conversion member to which an optical image of a subject Q is provided via an optical mask member PMP having a configuration as shown in FIG. 4(a).
E is cursed with a change in electrical resistance corresponding to the optical image of the subject in the portions corresponding to the light transmitting portions 2, 2, etc. in the optical mask member PMP, and the optical mask The portions of the photoconductive layer member PCE in the optical image-charge image conversion member corresponding to the light blocking portions (for example, black portions) 3゜3... in the member PMP are made to exhibit a constant high electrical resistance value. Therefore, at the end of the photoconductive layer member PCE in the optical image-to-charge image conversion member to which an optical image is applied to the subject through the optical mask member PMP, there is a layer of light transmitted through the optical mask member PMP. part 2
, 2, . . . , a region in which a charge image corresponding to the optical image of the subject Q is formed (indicated as regions TRI, TR2, . . . in the recording/reproducing region RZ in FIG. 1) area used to form the area) is formed,
In addition, the light blocking portion in the optical mask member PMP (
For example, at the end of the photoconductive layer member PCE in the optical image-charge image conversion member corresponding to the black portion) 3, 3...
A region exhibiting a constant potential (a region used to form the regions shown as regions OP1, P2, . . . in the recording/reproducing region RZ of FIG. 1) is formed.

Therefore, the charge image corresponding to the object a recorded on the charge latent image forming member CHL in the recording medium disk of the main recording/reproducing device shown in FIG. A charge image pattern corresponding to the optical image transmitted through the optical mask PMP having a predetermined pattern due to the light blocking portion is formed, and as described above, the charge image pattern is
Recording and reproducing area R in charge latent image forming member CHL of ID
The charge image Z is detected by the detection head EDA into a first region TR that shows a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording and reproduction region RZ of the charge latent image forming member CHL, and and a second region OP exhibiting a constant surface potential distribution, and the readout is performed in a predetermined one of the first region TR and second region OP. By performing the reset operation in the other area where the read operation was performed and the read operation was not performed, the recording/reproducing apparatus shown in the second diagram can achieve the above-mentioned proposal described with reference to FIG. 19. The information signal read operation and reset operation using a charge image similar to the information signal read operation and reset operation using a charge image in the device described above can be performed satisfactorily without vibrating the detection head EDA.

Further, as described above, the reading operation by the detection head EDA is performed in the first regions TR1, TR2, . . . in the recording/reproducing region RZ of the charge latent image forming member CHL, and the reset operation is performed in the second region ..., the reading operation by the detection head EDA is performed in the second areas OPI, OP2, etc. in the recording/reproducing area RZ of the charge latent image forming member CHL, and the reset operation is performed in the first area. The polarity of the detection signal output from the detection head EDA is reversed in the cases where TR1, TR2, etc. are used, but this point is the same as that described for the already proposed device shown in FIG.

The explanation so far has been based on the optical image of the subject a transmitted through an optical mask PMP having a predetermined pattern of light-transmitting parts and light-blocking parts, as shown in FIG. 4(a). An optical mask PM is applied to the charge latent image forming member CHL on the recording medium disk as a corresponding charge image pattern.
In this embodiment, a charge image corresponding to an optical image transmitted through P is formed. However, the transparent electrode Etw in the optical image-charge image conversion member is connected to two comb-shaped electric currents f4i4. The electric mask member is as shown in FIG. , 5, a predetermined voltage is applied between it and the electrode Et in the recording medium by a power supply (not shown), and 2 constitutes the electrical mask member described above. Two comb-shaped electrodes 4
, 5 is set to the same potential as the electrode Et located on the recording medium (electrode E
(directly connected to t), the above-mentioned (
An optical mask member P configured as shown in a)
A charge image similar to that in the case of using MP is formed on the charge latent image forming member CHL on the recording medium disk.

The electrical mask member shown in FIG. 4(b) and the optical mask member PMP having the configuration shown in FIG. 4(a) are different from each other. In relation to the charge image formed using the optical mask member PMP, the light transmitting portions 2, 2, . . .・ is the electrode Et on the recording medium among the two comb-shaped electrodes 4 and 5 constituting the electrical mask member configured as shown in FIG. 4(b). One electrode 4 to which a predetermined voltage is applied by a power source (not shown) between
In addition, the light blocking portion 3 in the optical mask member PMP having the configuration shown in FIG. 4(a) corresponds to
, 3... are the two comb-shaped electrodes 4, 5 constituting the electrical mask member configured as shown in FIG. 4(b). fi! t4iE
It corresponds to the other electrode 5 which is set to the same potential as t.

As the electrode Etw in the optical image-charge image conversion member in the recording/reproducing apparatus shown in FIG. 2 described above.

For example, if a configuration such as that shown in FIG. 4(b) above as a plan view is used, an optical image given an optical image of the subject's bite - a charge image. In the photoconductive layer member pcE of the conversion member, a change in electrical resistance corresponding to the optical image of the object appears in a portion corresponding to the electrode 4 portion of the electric mask member, and the optical image of the object Q appears. In the photoconductive layer member PCE of the given optical image-charge image conversion member, the portion corresponding to the portion of the electrode 5 in the electrical mask member described above is made to exhibit a constant high electrical resistance value.
At the end of the photoconductive layer member PCH in the optical image-to-charge image conversion member to which the optical image of the subject gun is applied via this electrical mask member, an electrode 4 in the electrical mask member is provided.
In the part corresponding to the part, a region where a charge image corresponding to the optical image of the subject σ is formed (formation of regions shown as regions TRI, TR2, etc. in the recording/reproducing region RZ in FIG. 1). At the end of the photoconductive layer member PCE in the optical image-to-charge image conversion member, which corresponds to the electrode 5 portion in the electrical mask member, a region showing a constant potential (area used for Recording/playback area R in Figure 1
In Z, regions OP1°OF2 . . . used for forming the regions are formed.

Therefore, the charge image corresponding to the subject area recorded on the charge latent image forming member CI (L) on the recording medium disk by the recording/reproducing apparatus shown in the second figure is the same as that of the optical image of the subject α on the electric mask member described above. A charge image pattern corresponding to a predetermined pattern formed by the electrode 4 portion and the electrode 5 portion is formed, and as described above, the charge image in the recording/reproducing area RZ in the charge latent image forming member CHL of the recording medium disk is formed. is detected by the detection head EDA on the charge latent image forming member CHL.
In the recording/reproducing area RZ, there is a first area TR showing a surface potential distribution based on a charge latent image corresponding to an information signal to be recorded/reproduced, and a second area TR showing a predetermined constant surface potential distribution.
The readout operation is performed in a predetermined one of the first region TR and the second region oP.

By performing the reset operation in the other area where the read operation was not performed,
In the recording and reproducing apparatus shown in FIG. 2, the reading operation and resetting operation of the information signal using the charge image are similar to the operation of reading the information signal using the charge image and the resetting operation in the previously proposed device described with reference to FIG. 19. This can be done well without vibrating the detection head EDA.

Further, as described above, the reading operation by the detection head EDA is performed in the first areas TRI, TR2, . . . in the recording/reproducing area RZ of the charge latent image forming member CHL, and the reset operation is performed in the second area OPI.

OF2..., the reading operation by the detection head EDA is carried out in the second areas OPI, OP2... in the recording/reproducing area RZ of the charge latent image forming member CHL, and the reset operation is carried out in the first Area TRL, TR2・
. . . The polarity of the detection signal output from the detection head EDA is reversed.

This point is the same as that described for the already proposed device shown in FIG.

Next, the recording and reproducing apparatus shown in FIG. Electrostatic shielding mask member EM having an electric shielding part
A first region TR showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording/reproducing region RZ of the charge latent image forming member CHL, and a predetermined constant surface. FIG. 7 is a diagram showing an example of the configuration of a recording/reproducing apparatus in which a state in which second regions OP indicating potential distribution are sequentially and alternately arranged is obtained during a recording operation.

In FIG. 5, D is an electrode Et made of a conductive material.
and a charge latent image forming member CH in this recording medium disc.
As L, a material layer 1 having a high insulating property capable of retaining a charge image formed thereon for a long time, for example, an insulating layer made of a polymeric material is used.

Of course, the form of the recording medium is not limited to a rotating disk.

In the recording and reproducing apparatus shown in FIG.

Light from the subject q passes through the imaging lens L to the photoconductive layer member PCE in an optical image-to-charge image conversion member, which is constructed by laminating a glass substrate BP, a transparent electrode Etw, and a photoconductive layer member PCE. is imaged.

The electrode Etw in the optical image-to-charge image conversion member described above and f! in the recording medium disk. ! , between the pole Et,
Since a constant voltage is applied from a power supply (not shown), the photoconductive layer member PC has an optical image of the subject Q formed thereon.
The electrical resistance of E changes in accordance with the optical image of the subject q formed thereon.

Therefore, a charge image pattern corresponding to the optical image of the subject Q appears on the end face of the optical image-charge image conversion member, that is, on the end face of the photoconductive layer member PCE. However, as described above, a charge latent image is formed on the end face of the optical image-charge image conversion member where a charge image pattern corresponding to the optical image of the subject Q appears, that is, the end face of the photoconductive layer member PCB, and on the recording medium disk. For example, as illustrated in FIG. 6, holes 15, 15, . . . are formed in the metal plate 14 between the member CHL and the member CHL! 3! Since the electrostatic shielding mask member EMP having a predetermined pattern of electrostatic shielding portions is connected to the electrode Et on the recording medium disc, as described above, In a state where a recording operation is being performed on the recording/reproducing area RZ of the recording medium disk, the electrostatic shielding member having the electrostatic shielding portion of the predetermined pattern described above is applied to the charge latent image forming member CI-(L) In the portions of the mask member EMP corresponding to the holes 15, 15, etc., there is a region where a charge image corresponding to the optical image of the subject ξ is formed (region TR1゜TR in the recording/reproducing region RZ in FIG. 1).
2) is formed, and in the charge latent image forming member CHL of the recording medium disk, a region corresponding to the electrostatic shielding portion of the predetermined pattern described above is formed. In the recording/reproducing area R2 of FIG. 1, there are areas OPI, OP2, and
(area used to form the area indicated as...)
is formed.

Therefore, the charge image corresponding to the object Q recorded on the charge latent image forming member CI-IL on the recording medium disc by the recording/reproducing apparatus shown in FIG. Hole 15.1 in the electrostatic shielding mask member EMP having the electrostatic shielding portion of the predetermined pattern described above
5..., and as mentioned above, the charge latent image forming member CH of the recording medium disc
The charge A9 in the recording/reproducing area RZ at L is the detection head E.
l) A first region T showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording and reproduction region RZ of the charge latent image forming member CI-i L;
R and a second region ○P showing a predetermined constant surface potential distribution, and are arranged alternately in the first region TR and the second region OP described above. In the recording/reproducing apparatus shown in FIG. 5, the read operation is performed in one area where the read operation was performed, and the reset operation is performed in the other area where the read operation was not performed. The reading operation and resetting operation of an information signal using a charge image, which are similar to the operation of reading an information signal using a charge image and the resetting operation in the previously proposed device described with reference to this, are performed by the detection head ED.
This can be done well without vibrating A.

Further, as described above, the reading operation by the detection head EDA is performed in the first areas TRI, TR2, .

OF2..., the reading operation by the detection head EDA is carried out in the second area ○Pi, OP2... in the recording and reproducing area RZ of the charge latent image forming member CHL, and the reset operation is carried out in the first The region Trζ1. T.R.
2..., the polarity of the detection signal output from the detection head EDA is reversed, but this point is
This is the same as described for the previously proposed device shown in the figure.

As shown in FIG. 6, an electrostatic shielding mask member EMP having a predetermined pattern of electrostatic shielding portions completely forms an optical image of a subject Q on a charge latent image forming member C of a recording medium disk. During the reproduction operation when a charge image in a corresponding state is formed, the recording medium disk is inserted between the charge latent image forming member C and the detection head EDA, and the detection head EDA detects the recording medium disk. The detection operation of the charge image in the recording and reproducing region RZ in the charge latent image forming member CHL is shown, and the surface potential distribution due to the charge latent image corresponding to the information signal to be recorded and reproduced in the recording and reproducing region R2 of the charge latent image forming member CHL is shown. First region TR (hole 1 in electrostatic shielding mask member EMP having a predetermined pattern of electrostatic shielding parts)
5, 1.5, etc.) and a second region OP (electrostatic shielding mask member EM having a predetermined pattern of electrostatic shielding portions) exhibiting a predetermined constant surface potential distribution.
A predetermined one of the first region TR and the second region ○P is sequentially and alternately located in the holes 15 in The recording and reproducing apparatus shown in FIG.
The information signal read operation and reset operation using a charge image similar to the information signal read operation and reset operation using a charge image in the existing proposed installation described with reference to FIG. It can be done.

Further, as described above, the reading operation by the detection head EDA is performed in the first areas TRI, TR2, . . . in the recording/reproducing area RZ of the charge latent image forming member CHL, and the reset operation is performed in the second area OPI.

OF2..., the reading operation by the detection head EDA is carried out in the second area OPI, OP2... in the recording/reproducing area RZ of the charge latent image forming member CI (L), and the reset operation is carried out in the second area OPI, OP2... 1 area TR1, TR2
. . . The polarity of the detection signal output from the detection head EDA is reversed.

This point is the same as that described for the already proposed device shown in FIG.

Next, FIG. 7 shows a first region TR showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced as a charge latent image forming member in a recording medium disk, and a predetermined constant area TR. A plan view ((a) in FIG. 7) showing an example of the structure of the recording medium disk in the case where the second area OP showing the surface potential distribution is formed of the charge latent image forming member CI-TL itself. ) and a partial side view ((b) of FIG. 7). In this FIG. 7, Et is a lightning bolt made of conductive material 1, for example gold H. . is a predetermined pattern of a charge latent image forming member made of an insulating material.

The recording medium disk having the configuration as illustrated in FIG. With the photoconductive layer member PCE facing the subject Q
The light from is passed through the imaging lens L to the glass substrate BP,
゛Transparent electrode Etw.

The photoconductive layer member PCE is made incident on an optical image-to-charge image converting member configured by laminating the photoconductive layer member PCE, and an optical image of the subject α is formed on the photoconductive layer member PCE.

By applying a predetermined voltage between the electrodes Et and tJiiEtw, a charge image corresponding to the optical image of the subject Q appears on the end surface of the light guide tt1 layer member PCE.

Then, in the predetermined pattern 6, 6... of the charge latent image forming member in the recording medium ff1D, an area where an @image corresponding to the optical image of the subject Q is formed (recording/reproduction in FIG. Region 14T R1 in region RZ.

The area used for forming the area shown as TR2...) is formed, and the area used for forming the area shown as TR2...
The exposed part of iEt has a region (
In the recording/reproducing area RZ of FIG. 1, areas OPI and OP2
. . . ) is formed.

Therefore, the charge image corresponding to the object α recorded on the charge KI & forming members 6, 6, etc. in the recording medium disk having the configuration shown in FIG. 7 is the charge image corresponding to the optical image of the object. This results in a charge image pattern corresponding to the predetermined pattern described above.

As mentioned above, the charge latent image forming member CHL of the recording medium disk
The charge image in the recording/reproducing area RZ is detected by the detection head EDA.
Accordingly, in the recording/reproducing area RZ of the recording medium disk, a first area TR exhibiting a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded/reproduced, and a second area TR exhibiting a predetermined constant surface potential distribution. The reading operation is performed in one predetermined area of the first area TR and the second area OP, and the reading operation is performed in one predetermined area of the first area TR and the second area OP. By performing the reset operation in the other area where the resetting operation was not performed, the recording/reproducing apparatus shown in FIG. The reading operation and resetting operation of the information signal due to charge reduction, which are similar to the reading operation and resetting operation, can be performed satisfactorily without causing the detection head EDA to vibrate.

Further, as described above, the reading operation by the detection head EDA is performed in the first areas TRI, TR2, . .

OF2..., the reading operation by the detection head EDA is carried out in the second areas OPI, OP2... in the recording/reproducing area RZ of the charge latent image forming member CHL, and the reset operation is carried out in the first Area TR1, TR2・
..., the polarity of the detection signal output from the detection head EDA is reversed, but this point is as explained with respect to the already proposed device shown in FIG.

FIG. 8 shows that most of the recording/reproducing area RZ on the recording medium disk is made into a first area TR formed by the charge latent image forming member CHL, and the electrodes of the recording medium disk are exposed on a part of the recording medium disk. This figure shows a recording medium disk in which a plurality of portions 7, 7 each configured as a second area OP are provided.

In the recording medium disk illustrated in FIG. 8, there are two portions 7.7 where the electrodes of the recording medium disk are exposed as the second area OP. a portion 7 that exposes the electrodes of the recording medium disk;
7 may be provided at three or more locations.

In FIG. 8, R is an arrow indicating the rotation direction of the recording medium disk, and 8 in the figure simply transmits an information signal to the charge latent image forming member CHL of the recording medium disk rotating in the direction of the arrow R. This is an example of a recording trace formed by recording in the form of a charge image by one recording element. It is used to form a recording trace 8 in the form shown in FIG. 8 by a single recording element on the charge latent image forming member CHL of the recording medium disk rotating in the direction of arrow R. As a single recording element, for example, a single needle fl! A recording element configured using a pole, or a recording element having a function of converting laser light into voltage (a recording element with a constituent layer structure in which a transparent electrode and a photoconductive layer are laminated), and other single-point electric charges. A single recording element configured to form an image on the charge latent image forming member CHL of the recording medium disk can be used, and a recording medium disk configured as shown in FIG. On the other hand, when reproducing the information signal from the recording trace 8 recorded in the form of a charge image.

For example, a single reproducing element comprising a single needle electrode that detects the voltage of a charge image by electrostatic induction, or 1! A single reproducing element configured so that the voltage of the charged image can be detected with a laser beam spot (an element consisting of a laminated structure of a transparent electrode, a light modulating material layer such as a lithium niobate single crystal, and a dielectric mirror) ) etc. can be used.

Even when reproducing an information signal from this recording medium disc, when reproducing a charge latent image from the recording and reproducing area of the charge latent image forming member CHL, the surface potential due to the charge PfIe corresponding to the information signal to be recorded and reproduced is The first region showing the distribution (the part other than 7 in FIG. 8) and the second region 7 showing a predetermined constant surface potential distribution are sequentially and alternately arranged, and the first region described above is By performing the reset operation in one of the predetermined regions of the second region 7 and the second region 7, a state is achieved in which the reading operation of the information signal based on the charge image and the reset operation do not vibrate a single reproducing element. It can be done well.

Now, in each of the embodiments described so far, during the period from when a reset operation is performed to when the next reset operation is performed, from the drain electrode of the detection field effect transistor in the detection head EDA described above, Leakage current to the gate electrode charges the capacitance of the input circuit, causing fluctuations in the detection voltage, but the detection head EDA
The reading operation and reset operation of the information signal are performed at the timing shown in FIG. 9, and the detection voltage read from the detection head EDA is processed in a signal processing configuration as illustrated in FIG. 10. If signal processing is performed using a circuit, it is possible to satisfactorily eliminate voltage fluctuations caused by the above-mentioned factors in the detection voltage of the detection head EDA.

FIG. 9 shows that a read operation and a reset operation are sequentially performed for each of the first area TR and second area OP in the recording/reproducing area RZ illustrated in FIG. 1 already mentioned. This figure shows the signal waveform side diagram of the detected force obtained by Ztrn,
Zopn, Ztr(n+1).

Each period indicated as Zop(n+1)... is the first period in the recording/reproducing area RZ in FIG. 1 in which surface potential detection (information signal reading) is to be performed by the detection head EDA. The detection head EDA is applied to the n-th, n+1-th, etc. in the region TR and the second region OP.
indicates the period in which they are located, and the 9th
The display of the reset potential shown in the figure is based on the first
1 shows the reset potential Vss in FIG.

Now, as shown in FIG. 9, the reading operation and reset operation of the information signal by the detection head EDA in the recording/reproducing area RZ of the recording medium disk are performed in the recording/reproducing area indicated by 9 in FIG. 1 as an example. When the read operation and the reset operation are performed sequentially for each of the first area TR and the second area oP in the RZ, the first area Z of No. 0 and 1 in the recording/reproducing area RZ trn,
n-th second area Zo in the recording/reproducing area RZ
pn.

The n+1st first area Ztr (nil) in the recording and reproducing area RZ, the n+th area in the recording and reproducing area RZ
The signals sequentially detected in the first second region Zop(n+1), etc. are in a state as shown in FIG. 9, in which the polarity is sequentially and alternately reversed on the time axis. However, as mentioned above, the first region T
When the read operation and the reset operation are sequentially performed for each of L (and the second area OF), the signal becomes in the state shown in FIG. 9. This can be easily understood from what has already been described with reference to FIG.

FIG. 10 shows a signal output from the detection head EDA in the state shown in FIG. No. 43 is a processing circuit for a signal in a state in which 9 is an input terminal of the signal processing circuit in FIG. 1HDL is 1
Horizontal scanning period delay circuit, PRC is a polarity inversion circuit, AD
D is an adder circuit, LM is a 1-line memory provided as necessary (1-line memory for compensating for signal loss), 10a
is the output terminal.

The signal in the state shown in FIG. 9 is output from the detection head EDA to the input terminal 9 of the signal processing circuit shown in FIG. 10, that is, the polarity of the signal is sequentially reversed on the time axis. In addition, the movable contact of the changeover switch SW switches in synchronization with the repetition period of the signal supplied to the input terminal 9 in accordance with a switching control signal supplied to a control terminal (not shown). When the operation is in progress, two signals, the output signal from the delay circuit IHDL for one horizontal scanning period connected to the fixed contact a of the changeover switch SW, and the output signal from the polarity inversion circuit PRC are sent to the adder circuit. Supplied to ADD.

In the two signals supplied to the adder circuit ADD,
Detection voltage corresponding to the surface potential of the recording medium disk, which is the object to be detected for surface potential.

That is, the two signals read out from the recording medium disc that are successive on the time axis are mutually supplied to the adder circuit ADD as in-phase signals, and the residual leakage current contained in the two signals is are signals with opposite phases to each other, so the signal supplied from the adder circuit ADD to the one-line memory LM is equal to the residual leakage current component contained in the two signals supplied to the adder circuit ADD. The signal is in a canceled state, and the detected voltage read from the recording medium disk is doubled.

Therefore, the signal sent from the one-line memory LM to the output terminal 10a is also in a state in which the residual leakage current component contained in the two signals supplied to the adder circuit ADD is canceled as described above. The signal is a state in which the detected voltage read from the recording medium disk is doubled.

In this way, the output terminal 10 of the signal processing circuit shown in FIG.
Since the signal output from a has successfully removed the leakage current component that has occurred in the signal during successive reset operations in the detection head EDA, the above-mentioned problems can be avoided. The problem is that the detection voltage fluctuates between successive reset operations due to the charging operation caused by the leakage current from the drain electrode to the gate electrode with respect to the capacitance of the input circuit in the field effect transistor of the detection head EDA. The reading operation and reset operation of the information signal by the detection head EDA are performed at the timing shown in FIG.
The detection voltage read out from the signal can be effectively removed by processing the detected voltage using a signal processing circuit configured as illustrated in FIG.

(Effects of the Invention) As is clear from the above detailed explanation, the charge latent image recording and reproducing apparatus of the present invention is capable of forming a charge latent image in which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. A field effect transistor for voltage detection, in which a voltage generated by electrostatic induction according to the surface potential of the member is applied to the gate electrode, and a capacitance of the input side circuit of the field effect transistor for voltage detection, as described above, is used for voltage detection. In a recording/reproducing device using a latent charge image, the recording/reproducing device includes a reset means for discharging charges accumulated by a leakage current between a drain electrode and a gate electrode of a field effect transistor. The reproducing operation of the charge latent image from the recording/reproduction target area includes a first region showing a surface potential distribution due to the charge latent image corresponding to the information signal to be recorded and reproduced, and a second region showing a predetermined constant surface potential distribution. and means for causing the reset operation to be performed in a predetermined one of the first area and the second area. Recording and reproducing device by.

and a voltage detection field effect transistor in which a voltage generated by electrostatic induction is applied to a gate electrode in accordance with the surface potential of a charge latent image forming member on which a charge latent image corresponding to optical image information to be recorded and reproduced is formed; The capacitance of the input side circuit of the voltage detection field effect transistor includes a reset means for discharging the charge accumulated by the leakage current between the drain electrode and the gate electrode of the voltage detection field effect transistor. In the imaging type recording and reproducing apparatus using a latent charge image, a first region exhibiting a surface potential distribution according to a latent charge image corresponding to an information signal to be recorded and reproduced is provided between the subject and the latent charge image forming member; and a second region exhibiting a predetermined constant surface potential distribution. means for sequentially and alternately performing a first region showing a surface potential distribution according to a charge latent image corresponding to an information signal to be reproduced and a second region showing a predetermined constant surface potential distribution; , an imaging type recording and reproducing device using a charge latent image, and a recording and reproducing target, comprising means for performing a reset operation in a predetermined one of the first region and the second region, and a recording and reproducing object. A field effect transistor for voltage detection in which a voltage generated by electrostatic induction is applied to a gate electrode according to the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal is formed; The capacitance of the input side circuit of the field effect transistor includes a reset means for discharging the charge accumulated by the leakage current between the drain electrode and the gate electrode of the voltage detection field effect transistor. In a recording/reproduction device using a charge latent image, a first image indicating a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded/reproduced in a recording/reproduction area of a charge latent image forming member.
and a second region exhibiting a predetermined constant surface potential distribution, means for sequentially performing one surface potential distribution detection operation and a resetting operation; The detection power in the first region and the second
Since the recording and reproducing apparatus using a charge latent image of the present invention is provided with means for obtaining an output signal by subtracting the detection force in the region of When a field effect transistor is used in the configuration of an impedance conversion circuit used to extract voltage from a voltage detection electrode circuit, leakage current from the drain electrode to the gate electrode causes damage to the input side circuit of the gate electrode of the field effect transistor. In order to prevent saturation of the output voltage due to the phenomenon in which the potential of the gate electrode gradually increases as the capacitance is charged, the reset operation is applied to the area where the charge image exists in the detected object. It is possible to easily obtain correct voltage detection power even during operation, and it is also possible to easily obtain a voltage detection force in a correct state. This also easily solves the problem that the detected voltage value becomes inaccurate over time due to an increase in the detected voltage due to the charging operation due to the leakage current between the drain electrode and the gate electrode due to the capacitance of the input circuit. The present invention satisfactorily solves the conventional problems mentioned above.

[Brief explanation of the drawing]

FIG. 1 shows the correspondence between the recording and reproducing area of the charge latent image forming member and the detection head to explain the reproducing operation by the detection head for the recording and reproducing area of the charge latent image forming member in the recording and reproducing apparatus using the charge latent image of the present invention. FIGS. 2 and 51 are plan views showing the relationship; FIGS. 2 and 51 are side views showing a schematic diagram of the recording/reproducing device; FIGS. 3 and 7(a), and FIG. 8 are plan views of the recording medium disc. , FIG. 7(b) is a side view of the recording medium disc, FIGS. 4 and 6 are plan views of part of the mask member, FIG. 9 is a waveform side view for explanation, and FIG. 10 is a signal processing diagram. FIG. 11 is a block diagram showing an example of a circuit configuration; FIG.
The figure is a perspective view showing an example of the configuration of the detection head, FIG. 143 is a waveform diagram used to explain the operation of the circuit shown in FIG. 1-1, FIGS. 14 to 18 are diagrams for explaining the operation, and FIG. 19 20 is a side view showing the configuration and example of the proposed device, and FIG. 20 is a timing chart for explaining the operation of the proposed device. Et...electrode, Etw...transparent electrode, Q...subject, L...imaging lens, PM, P...optical having a predetermined pattern of light transmitting portions and light blocking portions. Mask, PCB...Photoconductive layer member, EMP...
・Electrostatic shielding mask member, EDA...detection head, RZ
...Recording and reproducing area in charge latent image forming member, CHL
... Charge latent image forming member, TR, TRI, TR2...
A first area showing a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced in the recording/reproduction area RZ of the charge latent image forming member CHL, op, ○Pi, OP2...
A second region exhibiting a predetermined constant surface potential distribution in the recording/reproducing region RZ of the charge latent image forming member CHL, 0
... Detected object, DF... Field effect transistor for voltage detection, ED, EDI, ED2. ED3~EDn...
Voltage detection electrode, Cin...Capacitance on the input circuit side of the gate electrode of the voltage detection field effect transistor DF,
SWr...Switch used as a reset means, C...Capacitance between the surface of the detected object 0 and the voltage detection electrode ED, RQ...Load resistance, EDA...Plural Detection head in which voltage detection electrodes ED are arranged in a predetermined arrangement pattern, ADD-addition circuit, Q1
．． Q2. Q 3 ~ Q n- connection line, RFI, RF
2. RF3 to RFn - field effect transistors used as switching means for reset, S Fl, S
F2. SF3 to SFn-Switching field effect transistor, SR...shift register. BP... Base, BGM... Displacement drive device, SW...
・Selector switch, PRC...Polarity reversal circuit, I HD
L... ]-H delay circuit, 1... rotation axis, 2...
A light transmitting portion in the optical mask member PMP,
3... Light blocking part (for example, W, colored part) in optical mask member PMP, 4, 5... Comb tooth-shaped electrode, 6... Predetermined charge latent image forming member made of insulating material pattern, 10, 10a, 11-output terminal, 14
-...Gold pA plate. 15... Hole, 20... Input end f of reset pulse Pr, 24... Connection member, 25... Displacement drive device BG
Center retainer of the movable part 26 in M, 26... movable part. 27...Permanent magnet that applies a magnetic field to the moving coil in the case of the displacement drive device BGM. Patent Applicant: Victor Japan Co., Ltd. 1) 7゜Representative Patent Attorney Takao Imama・'=”L”-””’Shu-PaniX EDA (1. (a) (,C) (d)

Claims (1)

[Claims] 1. Voltage detection in which a voltage generated by electrostatic induction is applied to a gate electrode according to the surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. for discharging charges accumulated in the capacitance of the field effect transistor for voltage detection and the input side circuit of the field effect transistor for voltage detection due to the leakage current between the drain electrode and the gate electrode of the field effect transistor for voltage detection. In a charge latent image recording and reproducing apparatus configured to include a reset means, the operation of reproducing the charge latent image from the recording and reproducing area of the charge latent image forming member generates a charge latent image corresponding to an information signal to be recorded and reproduced. a first region showing a surface potential distribution according to the method and a second region showing a predetermined constant surface potential distribution sequentially and alternately; A charge latent image recording/reproducing device 2 comprising a charge latent image recording/reproducing device 2 comprising means for performing a reset operation in a predetermined one of the regions, and a charge latent image corresponding to optical image information to be recorded/reproduced is formed. A field effect transistor for voltage detection in which a voltage generated by electrostatic induction is applied to the gate electrode according to the surface potential of a charge latent image forming member, and a capacitance of an input side circuit in the field effect transistor for voltage detection. In the imaging type recording and reproducing apparatus using a charge latent image, which is configured to include a reset means for discharging the charge charged by the leakage current between the drain electrode and the gate electrode of the field effect transistor for voltage detection, A first region exhibiting a surface potential distribution due to a charge latent image corresponding to an information signal to be recorded and reproduced, and a second region exhibiting a predetermined constant surface potential distribution between the charge latent image forming member and the charge latent image forming member. A mask member is provided to form a charge latent image, and the reproduction operation of the charge latent image from the recording/reproducing area of the charge latent image forming member shows a surface potential distribution due to the charge latent image corresponding to the information signal to be recorded/reproduced. means for sequentially alternating the first region and a second region exhibiting a predetermined constant surface potential distribution; 3. An imaging type recording and reproducing device 3 using a charge latent image, comprising means for performing a reset operation in one of the regions, wherein a mask member having a predetermined optical pattern is used. An imaging type recording/reproducing apparatus 4 according to claim 2, wherein an electrostatic shielding member having a predetermined pattern is used as the mask member, and an imaging type recording/reproducing apparatus 5 according to claim 2, which corresponds to the information signal to be recorded and reproduced as the charge latent image forming member. Claim 1 wherein the charge latent image forming member itself is configured with a first region showing a surface potential distribution due to a charge latent image and a second region showing a predetermined constant surface potential distribution. Alternatively, in the imaging type recording and reproducing device 6 according to claim 2, a voltage generated by electrostatic induction is gated according to a surface potential of a charge latent image forming member on which a charge latent image corresponding to an information signal to be recorded and reproduced is formed. The capacitance of the voltage detection field effect transistor applied to the electrode and the input side circuit of the voltage detection field effect transistor is charged by the leakage current between the drain electrode and gate electrode of the voltage detection field effect transistor. In a charge latent image recording/reproducing device configured to include a reset means for discharging charges, the surface potential due to the charge latent image corresponding to the information signal to be recorded/reproduced in the recording/reproducing area of the charge latent image forming member. Means for sequentially performing a surface potential distribution detection operation and a reset operation for each of a first region showing a distribution and a second region showing a predetermined constant surface potential distribution. and means for obtaining an output signal by subtracting the detection force in the first area and the detection force in the second area.