JPH0234623A - Resin composition for semiconductor sealing - Google Patents
Resin composition for semiconductor sealingInfo
- Publication number
- JPH0234623A JPH0234623A JP18357688A JP18357688A JPH0234623A JP H0234623 A JPH0234623 A JP H0234623A JP 18357688 A JP18357688 A JP 18357688A JP 18357688 A JP18357688 A JP 18357688A JP H0234623 A JPH0234623 A JP H0234623A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- vinyl
- bismaleimide
- polymer
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000007789 sealing Methods 0.000 title abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims abstract description 36
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 36
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 33
- -1 polyphenol compound Chemical class 0.000 claims abstract description 25
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229920003192 poly(bis maleimide) Polymers 0.000 claims abstract description 24
- 235000013824 polyphenols Nutrition 0.000 claims abstract description 15
- 229920000578 graft copolymer Polymers 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 9
- 239000011256 inorganic filler Substances 0.000 claims abstract description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920005573 silicon-containing polymer Polymers 0.000 claims abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 4
- 125000000962 organic group Chemical group 0.000 claims abstract description 3
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 6
- 238000010186 staining Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 12
- 239000000178 monomer Substances 0.000 description 11
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical group COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- RSNDTPFSMDVWCS-UHFFFAOYSA-N 2-(butoxymethyl)prop-2-enamide Chemical group CCCCOCC(=C)C(N)=O RSNDTPFSMDVWCS-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007859 condensation product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- SHZIWNPUGXLXDT-UHFFFAOYSA-N ethyl hexanoate Chemical compound CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- KDGNCLDCOVTOCS-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy propan-2-yl carbonate Chemical compound CC(C)OC(=O)OOC(C)(C)C KDGNCLDCOVTOCS-UHFFFAOYSA-N 0.000 description 1
- ZAFBPXUQKNWAEZ-UHFFFAOYSA-N (3-chloro-3-hydroxypropyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCC(O)Cl ZAFBPXUQKNWAEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- UTOVMEACOLCUCK-SNAWJCMRSA-N (e)-4-butoxy-4-oxobut-2-enoic acid Chemical compound CCCCOC(=O)\C=C\C(O)=O UTOVMEACOLCUCK-SNAWJCMRSA-N 0.000 description 1
- GWYSWOQRJGLJPA-UHFFFAOYSA-N 1,1,2,2-tetrafluoropropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(F)(F)C(C)(F)F GWYSWOQRJGLJPA-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- IPJGAEWUPXWFPL-UHFFFAOYSA-N 1-[3-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC(N2C(C=CC2=O)=O)=C1 IPJGAEWUPXWFPL-UHFFFAOYSA-N 0.000 description 1
- AQGZJQNZNONGKY-UHFFFAOYSA-N 1-[4-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=C(N2C(C=CC2=O)=O)C=C1 AQGZJQNZNONGKY-UHFFFAOYSA-N 0.000 description 1
- PYVHLZLQVWXBDZ-UHFFFAOYSA-N 1-[6-(2,5-dioxopyrrol-1-yl)hexyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1CCCCCCN1C(=O)C=CC1=O PYVHLZLQVWXBDZ-UHFFFAOYSA-N 0.000 description 1
- QTKPMCIBUROOGY-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(F)(F)F QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- VVHFXJOCUKBZFS-UHFFFAOYSA-N 2-(chloromethyl)-2-methyloxirane Chemical compound ClCC1(C)CO1 VVHFXJOCUKBZFS-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- IEYASXGZDIWRMO-UHFFFAOYSA-N 2-bromo-4-(2-hydroxyethoxy)-5-methoxybenzonitrile Chemical compound COC1=CC(C#N)=C(Br)C=C1OCCO IEYASXGZDIWRMO-UHFFFAOYSA-N 0.000 description 1
- DJKKWVGWYCKUFC-UHFFFAOYSA-N 2-butoxyethyl 2-methylprop-2-enoate Chemical compound CCCCOCCOC(=O)C(C)=C DJKKWVGWYCKUFC-UHFFFAOYSA-N 0.000 description 1
- KRDXTHSSNCTAGY-UHFFFAOYSA-N 2-cyclohexylpyrrolidine Chemical compound C1CCNC1C1CCCCC1 KRDXTHSSNCTAGY-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- IIVWHGMLFGNMOW-UHFFFAOYSA-N 2-methylpropane Chemical compound C[C](C)C IIVWHGMLFGNMOW-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- VEORPZCZECFIRK-UHFFFAOYSA-N 3,3',5,5'-tetrabromobisphenol A Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C)(C)C1=CC(Br)=C(O)C(Br)=C1 VEORPZCZECFIRK-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 description 1
- MKTOIPPVFPJEQO-UHFFFAOYSA-N 4-(3-carboxypropanoylperoxy)-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)OOC(=O)CCC(O)=O MKTOIPPVFPJEQO-UHFFFAOYSA-N 0.000 description 1
- WPSWDCBWMRJJED-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]phenol;oxirane Chemical compound C1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 WPSWDCBWMRJJED-UHFFFAOYSA-N 0.000 description 1
- RTTAGBVNSDJDTE-UHFFFAOYSA-N 4-ethoxy-2-methylidene-4-oxobutanoic acid Chemical compound CCOC(=O)CC(=C)C(O)=O RTTAGBVNSDJDTE-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical group C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical class [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000012986 chain transfer agent Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- JBSLOWBPDRZSMB-BQYQJAHWSA-N dibutyl (e)-but-2-enedioate Chemical compound CCCCOC(=O)\C=C\C(=O)OCCCC JBSLOWBPDRZSMB-BQYQJAHWSA-N 0.000 description 1
- ZEFVHSWKYCYFFL-UHFFFAOYSA-N diethyl 2-methylidenebutanedioate Chemical compound CCOC(=O)CC(=C)C(=O)OCC ZEFVHSWKYCYFFL-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- GLVVKKSPKXTQRB-UHFFFAOYSA-N ethenyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC=C GLVVKKSPKXTQRB-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- NKHAVTQWNUWKEO-UHFFFAOYSA-N fumaric acid monomethyl ester Natural products COC(=O)C=CC(O)=O NKHAVTQWNUWKEO-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 239000003721 gunpowder Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical group CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- AMEVLYGGLRIBIO-UHFFFAOYSA-N octoxycarbonyloxy octyl carbonate Chemical compound CCCCCCCCOC(=O)OOC(=O)OCCCCCCCC AMEVLYGGLRIBIO-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- HVAMZGADVCBITI-UHFFFAOYSA-M pent-4-enoate Chemical compound [O-]C(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-M 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007717 redox polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- IFXORIIYQORRMJ-UHFFFAOYSA-N tribenzylphosphane Chemical compound C=1C=CC=CC=1CP(CC=1C=CC=CC=1)CC1=CC=CC=C1 IFXORIIYQORRMJ-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- MEBONNVPKOBPEA-UHFFFAOYSA-N trimethyl cyclohexane Natural products CC1CCCCC1(C)C MEBONNVPKOBPEA-UHFFFAOYSA-N 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、低弾性率、低熱膨張率で、なおかつ耐熱性を
損なうことなく、耐熱衝撃性、半田耐熱性に優れ、更に
金型汚れが少なく成形性に優れた、高信鎖性を要求され
る半導体等電子部品の封止用に適した半導体封止用樹脂
組成物に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention has a low modulus of elasticity and a low coefficient of thermal expansion, and also has excellent thermal shock resistance and soldering heat resistance without impairing heat resistance. The present invention relates to a resin composition for semiconductor encapsulation, which has excellent moldability and is suitable for encapsulation of electronic components such as semiconductors that require high reliability.
近年、半導体を封止する方法としてエポキシ樹脂に代表
される熱硬化性樹脂を使用したいわゆるプラスチック封
止が原料の低度、大量生産に適するといった経済的利点
をいかして広く実用化されている。特に多官能エポキシ
樹脂、ノボラック型フェノール樹脂、無機質充填材を主
成分とした樹脂組成物が耐熱性、成形性、電気特性に優
れているため封止樹脂の主流となっている。In recent years, so-called plastic encapsulation using thermosetting resins such as epoxy resins has been widely put into practical use as a method for encapsulating semiconductors, taking advantage of its economic advantages such as low raw material requirements and suitability for mass production. In particular, resin compositions containing polyfunctional epoxy resins, novolac type phenolic resins, and inorganic fillers as main components have become mainstream as sealing resins because they have excellent heat resistance, moldability, and electrical properties.
〔発明が解決しようとする課題]
一方、半導体チップの高集積化が進み、それに伴いチッ
プサイズが大型化してきた。またパッケージの形状は基
板への高密度実装化、表面実装化に伴い、チップの大型
化とは逆にフラットパッケージに見られる如く小型化・
薄型化の傾向にある、このため従来の封止樹脂では見ら
れなかった不良現象が派生するようになった。すなわち
、封止樹脂とチップの熱膨張率の差に起因する樹脂の応
力がチップの大型化、樹脂層の薄肉化のため、熱衝撃に
よりバンシベーション膜のクランク、アルミ配線スライ
ドあるいは封止樹脂のクランクといった破壊現象を引き
起こし、又表面実装化に伴いパッケージそのものが半田
浴温度にさらされるため、パンケージ内の水分が象、激
に膨張し、パッケージにクランクといった破壊現象を引
き起こし、半導体の耐湿性を低下させ、ひいては信鎖性
を低下させる原因となっている。従って、封止樹脂とし
てはこの応力の小さく、半田耐熱性の優れた封止樹脂の
開発が望まれている。[Problems to be Solved by the Invention] On the other hand, the integration of semiconductor chips has progressed, and the chip size has accordingly increased. In addition, the shape of packages has become smaller and smaller, as seen in flat packages, as opposed to larger chips due to higher density mounting on substrates and surface mounting.
There is a trend toward thinner products, and this has led to defects that were not seen with conventional sealing resins. In other words, stress in the resin due to the difference in coefficient of thermal expansion between the sealing resin and the chip increases the size of the chip and the thinning of the resin layer, causing thermal shock that causes damage to the crank of the vancivation film, aluminum wiring slide, or the sealing resin. Also, as the package itself is exposed to the solder bath temperature due to surface mounting, the moisture inside the pan cage expands rapidly, causing damage to the package and reducing the moisture resistance of the semiconductor. This causes a decrease in the reliability of the chain. Therefore, it is desired to develop a sealing resin that has less stress and excellent solder heat resistance.
応力を小さくする方法としては、樹脂の熱膨張率を小さ
くしてチップのそれとの差を小さくする事が考えられる
が、樹脂の熱膨張率とチップのそれ七の差は大きく、こ
れを縮めるためには熱膨張率の小さい無機質充填材を樹
脂中に多量に使用しなければならないが、現在すでにか
なり多量の無機質充填材が使用されていて、更にこれを
増量する事は成形性の悪化の原因となる。一方、樹脂の
弾性率を下げて応力を小さくするという目的で可塑材を
添加したり、可撓性を存したエポキシ樹脂あるいはフェ
ノール樹脂を用いたりする事が試みられたが、この方法
により得られた硬化物は耐熱性の点で問題があった。One possible way to reduce the stress is to reduce the coefficient of thermal expansion of the resin to reduce the difference between it and that of the chip, but the difference between the coefficient of thermal expansion of the resin and that of the chip is large, and it is necessary to reduce this. To do this, a large amount of inorganic filler with a low coefficient of thermal expansion must be used in the resin, but currently a considerable amount of inorganic filler is already being used, and further increasing this amount will cause deterioration of moldability. becomes. On the other hand, attempts have been made to add plasticizers to lower the elastic modulus of the resin and reduce stress, or to use flexible epoxy resins or phenolic resins, but these methods have not produced results. The cured product had a problem in heat resistance.
また特開昭58−108220に代表される如くゴム粒
子を封止樹脂中に分散させる事により耐熱性を保持しつ
つ、耐クラツク性を付与する方法等も発明されているが
、これらの方法では半田浴の如き封止樹脂のガラス転移
温度を超える高温における耐衝撃性に劣る等いくつかの
問題点があった。In addition, as typified by JP-A No. 58-108220, methods have been invented to provide crack resistance while maintaining heat resistance by dispersing rubber particles in a sealing resin. There were several problems such as poor impact resistance at high temperatures exceeding the glass transition temperature of the sealing resin such as a solder bath.
この高温における耐衝撃性を向上させるためには耐熱温
度(ガラス転移温度)を高めることが一手段としである
。この目的に対してマレイミド樹脂を使用することが有
効な手段として考えられている。特にビスマレイミドが
低軟化点、低粘度といった点で多く用いられているが、
比較的低分子量であるために硬化時に金型表面ヘプリー
ドし、著し、く金型を汚染するといった問題点があつた
。One way to improve the impact resistance at high temperatures is to increase the heat resistance temperature (glass transition temperature). The use of maleimide resins is considered to be an effective means for this purpose. In particular, bismaleimide is often used due to its low softening point and low viscosity.
Since it has a relatively low molecular weight, it has a problem in that it bleeds onto the surface of the mold during curing, significantly contaminating the mold.
本発明は、高集積回路等の高い信鯨性を要求される半導
体の封止用樹脂に対して要求されている応力が小さく耐
熱衝撃性、半田耐熱性等の問題を解決し、更に金型汚れ
の著しく改善された半導体封止用樹脂組成物を提供する
ことを目的とする。The present invention solves problems such as low stress, thermal shock resistance, and soldering heat resistance, which are required for resins for sealing semiconductors that require high reliability such as highly integrated circuits, and furthermore, An object of the present invention is to provide a resin composition for semiconductor encapsulation that has significantly improved staining.
本発明者等は種々検討した結果、ビニル変性シリコーン
重合体を主体とする軟質ビニル重合体の微粒子を樹脂組
成物中に均一に分散させる事、特定のビスマレイミドと
ポリフェノール化合物の反応物が応力を小さくし、耐熱
衝撃性及び半田耐熱性の向上に有効であり、しかも金型
汚れが著しく改善される事を見出し、本発明に達した。As a result of various studies, the inventors of the present invention found that it is possible to uniformly disperse fine particles of a soft vinyl polymer, mainly a vinyl-modified silicone polymer, in a resin composition, and that a reaction product of a specific bismaleimide and a polyphenol compound can reduce stress. The present invention was achieved by finding that it is effective in reducing the size, improving thermal shock resistance and soldering heat resistance, and that mold staining is significantly improved.
即ち本発明は、
(a)エポキシ樹脂とビニルポリマーとのグラフト重合
体中に、ビニル変性シリコーン重合体を主体とする軟質
ビニル重合体が1.0μ以下の粒子径で均一に分散され
た変性エポキシ樹脂、(b) −11式(1)で示され
るビスマレイミドと少なくともフェノール性水酸基を2
個以上存するポリフェノール化合物の反応物、
(R,は少なくとも2個の炭素数を有する2価の有機基
を表す、)
(c)無機充填剤、
を含有してなることを特徴とする半導体封止用樹脂組成
物である。That is, the present invention provides (a) a modified epoxy resin in which a soft vinyl polymer mainly composed of a vinyl-modified silicone polymer is uniformly dispersed in a graft polymer of an epoxy resin and a vinyl polymer with a particle size of 1.0 μ or less; Resin, (b) -11 Bismaleimide represented by formula (1) and at least 2 phenolic hydroxyl groups
(c) an inorganic filler; (R represents a divalent organic group having at least 2 carbon atoms); (c) an inorganic filler; It is a resin composition for
本発明の(a)に使用されるエポキシ樹脂は多価エポキ
シ樹脂であれば一般的に使用されるエポキシ樹脂が使用
可能であり、耐熱性、電気特性からフェノールノボラッ
ク、クレゾールノボラックなどのグリシジル化物等のノ
ボラックエポキシ樹脂4<好ましいが、その他の1分子
に2ヶ以上の活性水素を存する化合物、例えばビスフェ
ノールA、ビスヒドロキシジフェニルメタン、レゾルシ
ン、ビスヒドロキシジフェニルエーテル、テトラブロム
ビスフェノールA等の多価フェノール類、エチレングリ
コール、ネオペンチルグリコール、グリセリン、トリメ
チロールプロパン、ペンタエリスリトール、ジエチレン
グリコール、ポリプロピレングリコール、ビスフェノー
ルA−エチレンオキサイド付加物、トリスヒドロキシエ
チルイソシアヌレート等の多価アルコール、エチレンジ
アミン、アニリン等のポリアミノ化合物、アジピン酸、
フタル酸、イックタル酸等の多価カルボキシ化合物等と
エピクロルヒドリン又は2−メチルエピクロルヒドリン
を反応させて得られるグリシジル型のエポキシ樹脂、ジ
シクロペンタジエンジエボキサイド、ブタジェンダイマ
ージエポキサイド等の如き脂肪族(脂環族を含む)のエ
ポキシ樹脂などから選ばれた1種以上のエポキシ樹脂を
使用することが出来る。As the epoxy resin used in (a) of the present invention, commonly used epoxy resins can be used as long as they are polyhydric epoxy resins, and glycidylated products such as phenol novolak and cresol novolak can be used in view of their heat resistance and electrical properties. Novolak epoxy resin 4 <Preferably, other compounds having two or more active hydrogens in one molecule, such as polyhydric phenols such as bisphenol A, bishydroxydiphenylmethane, resorcinol, bishydroxydiphenyl ether, and tetrabromobisphenol A, and ethylene. Glycol, neopentyl glycol, glycerin, trimethylolpropane, pentaerythritol, diethylene glycol, polypropylene glycol, bisphenol A-ethylene oxide adduct, polyhydric alcohols such as trishydroxyethyl isocyanurate, ethylenediamine, polyamino compounds such as aniline, adipic acid,
Glycidyl-type epoxy resins obtained by reacting polyhydric carboxy compounds such as phthalic acid and icthalic acid with epichlorohydrin or 2-methylepichlorohydrin, aliphatic (alicyclic It is possible to use one or more epoxy resins selected from epoxy resins of the following groups.
本発明の(a)に於けるエポキシ4M脂とじニルポリマ
ーとのグラフト重合体は、エポキシ樹脂の存在下に前記
ビニルポリマーを生成させるべくビニルモノマーを重合
する事により製造する方法が代表的である。ここでグラ
フト重合体なる語は通常ブロック重合体と呼ぶものを含
む、ここでビニルポリマーをつくるために用いるビニル
モノマーとしては、スチレン、ビニルトルエン等の如き
アルケニル芳香族類、メチルメタアクリレート、ドデシ
ルメタアクリレート、ブトキシエチルメタアクリレート
、グリシジルメタアクリレート、メチルアクリレート、
ブチルアクリレート、2−エチルへキシルアクリレート
、ヒドロキシエチルアクリレート、トリメチロールプロ
パントリアクリレート等の如きアクリルエステル類、ア
クリルニトリル、アクリル酸、ブトキシメチルアクリル
アミド、メタアクリルアミド等の如きエステル基を持た
ないアクリル化合物、ビニルアセテート、ビニルラウレ
ート、ビニルパーサテート、ビニルクロライド、ビニリ
デンクロライド、エチレン、アリルアセテート等の如き
非共役性ビニル化合物、ブクジエン、イソプレン、クロ
ロプレンの如き共役ジエン化合物が代表的で、その他、
ビニルシリコーン、ジブチルフマレート、モノメチルマ
レート、ジエチルイタコネート、メタクリル酸トリフロ
ロエチル、メタクリル酸テトラフロロプロピル等のメタ
クリル酸、アクリル酸の弗素化合物等の如き重合性ビニ
ル化合物を用いることもできる。前記したビニルモノマ
ーを重合してビニルポリマーとするには、通常ラジカル
開始剤、例えばラウロイルパーオキサイド、ベンゾイル
パーオキサイド、ターシャリブチルパーベンゾエート、
ジメチルジベンゾイルパーオキシヘキサン、ターシャリ
ブチルパービバレート、ジターシャリブチルパーオキサ
イド、1.1−ビスターシャリブチルパーオキシ3゜3
.5− トリメチルシクロヘキサン、ジメチルジターシ
ャリブチルパーオキシヘキサン、ターシャリブチルクミ
ルパーオキサイド、メチルエチルケトンパーオキサイド
、シクロヘキサノンパーオキサイド、キュメンハイドロ
パーオキサイド、ターシャリブチルパーオキシアリルカ
ーボネート、ジオクチルパーオキシジカーボネート、タ
ーシャリブチルパーオキシマレイン酸、琥珀酸パーオキ
サイド、ターシャリブチルパーオキシイソプロピルカー
ボネート、過酸化水素の如きパーオキサイド、アゾビス
イソブチロニトリル、アゾビスジメチルバレロニトリル
の如きアゾ化合物を用いてラジカル重合するのが代表的
である。The graft polymer with epoxy 4M abutinyl polymer in (a) of the present invention is typically produced by polymerizing vinyl monomers to produce the vinyl polymer in the presence of an epoxy resin. The term graft polymer as used herein includes what is commonly referred to as block polymers; the vinyl monomers used to make the vinyl polymer include alkenyl aromatics such as styrene, vinyltoluene, etc., methyl methacrylate, dodecyl methacrylate, etc. Acrylate, butoxyethyl methacrylate, glycidyl methacrylate, methyl acrylate,
Acrylic esters such as butyl acrylate, 2-ethylhexyl acrylate, hydroxyethyl acrylate, trimethylolpropane triacrylate, etc., acrylic compounds without ester groups such as acrylonitrile, acrylic acid, butoxymethylacrylamide, methacrylamide, etc., vinyl Representative examples include non-conjugated vinyl compounds such as acetate, vinyl laurate, vinyl persatate, vinyl chloride, vinylidene chloride, ethylene, allyl acetate, etc., and conjugated diene compounds such as bucdiene, isoprene, and chloroprene.
Polymerizable vinyl compounds such as fluorine compounds of methacrylic acid and acrylic acid such as vinyl silicone, dibutyl fumarate, monomethyl maleate, diethyl itaconate, trifluoroethyl methacrylate, and tetrafluoropropyl methacrylate can also be used. In order to polymerize the vinyl monomers described above to obtain a vinyl polymer, a radical initiator such as lauroyl peroxide, benzoyl peroxide, tert-butyl perbenzoate, etc. is usually used.
Dimethyldibenzoyl peroxyhexane, tert-butyl perbivalate, di-tert-butyl peroxide, 1.1-bi-tert-butyl peroxy 3゜3
.. 5- Trimethylcyclohexane, dimethyl ditertiarybutyl peroxyhexane, tert-butyl cumyl peroxide, methyl ethyl ketone peroxide, cyclohexanone peroxide, cumene hydroperoxide, tert-butyl peroxyallyl carbonate, dioctyl peroxydicarbonate, tert-butyl Radical polymerization using peroxides such as peroxymaleic acid, succinic peroxide, tert-butylperoxyisopropyl carbonate, hydrogen peroxide, and azo compounds such as azobisisobutyronitrile and azobisdimethylvaleronitrile Representative.
又、必要に応じて還元剤を併用していわゆるレドックス
重合をさせてもよく、ハイドロキノンの如き重合禁止剤
、ドデシルメルカプタンの如き連鎖移動剤を使用しても
よい。Further, if necessary, a reducing agent may be used in combination to carry out so-called redox polymerization, and a polymerization inhibitor such as hydroquinone or a chain transfer agent such as dodecyl mercaptan may be used.
又、グラフト化促進の為に、エポキシ樹脂に重合性二重
結合やグラフト可能な化学結合を導入しておく方法がを
効である0重合性二重結合の導入方法には、例えばアク
リル酸、アクリルアミド、メチロールアクリルアミド、
ブトキシメチルアクリルアミド、ヒドロキシエチルメタ
アクリレート、グリシジルメタアクリレート、無水マレ
イン酸、モノエチルイタコネート、モノブチルフマレー
ト、クロルメチルスチレン、ホスホキシエチルメタアク
リレート、クロルヒドロキシプロピルメタアクリレート
、バラヒドロキシスチレン、ジメチルアミノエチルメタ
アクリレートの如き官能基と重合性二重結合とを有する
化合物を、エポキシ樹脂と予め反応させておく方法が代
表的である。In addition, in order to promote grafting, it is effective to introduce a polymerizable double bond or a chemical bond that can be grafted into the epoxy resin. acrylamide, methylol acrylamide,
Butoxymethylacrylamide, hydroxyethyl methacrylate, glycidyl methacrylate, maleic anhydride, monoethyl itaconate, monobutyl fumarate, chloromethylstyrene, phosphoxyethyl methacrylate, chlorohydroxypropyl methacrylate, rose hydroxystyrene, dimethylaminoethyl A typical method is to react a compound having a functional group and a polymerizable double bond, such as methacrylate, with an epoxy resin in advance.
なお、本発明に於いて前記グラフト重合体中には前記エ
ポキシ樹脂や前記ビニルポリマーがグラフトしないでフ
リーのまま残っていてもかまわない。In the present invention, the epoxy resin or the vinyl polymer may remain free in the graft polymer without being grafted.
(a)の変性エポキシ樹脂は前記したエポキシ樹脂とビ
ニルポリマーとのグラフト重合体の存在下に軟質ビニル
重合体を形成するモノマーを常法により重合することに
より得られる。得られる軟質ビニル重合体の粒子径は1
.0μ以下、好ましくは0.5μ以下、更に好ましくは
0,01μ以上0.2μ以下である。軟質ビニル重合体
の粒子径が1゜θμを超えると本発明の目的である低応
力化を果たせず、耐熱衝撃性も改良されない。The modified epoxy resin (a) can be obtained by polymerizing a monomer that forms a flexible vinyl polymer in the presence of the above-mentioned graft polymer of an epoxy resin and a vinyl polymer by a conventional method. The particle size of the resulting soft vinyl polymer is 1
.. It is 0μ or less, preferably 0.5μ or less, more preferably 0.01μ or more and 0.2μ or less. If the particle diameter of the soft vinyl polymer exceeds 1°θμ, the object of the present invention, which is to reduce stress, cannot be achieved and thermal shock resistance cannot be improved.
本発明に使用される軟質系ビニル重合体はビニル変性シ
リコ−コンを主体とする重合体でなければならない、ビ
ニル変性シリコーンを主体とする重合体とはビニル変性
シリコーンの単独重合体もしくは共重合体またはビニル
変性シリコーンと他のビニルモノマーとの共重合体をい
う、ビニル変性シリコーンとしては例えばメタアクリロ
キシプロピルシロキサン、メタアクリロキシプロピルア
ルコキシシラン、ビニルアルコキシシラン等があケラれ
る。また他のビニルモノマーとしては前記のグラフト重
合体をつくる際に用いるモノマーは総て用いることがで
きる。他のビニルモノマーの使用割合は、得られる共重
合体が軟質、即ち液状ないしゴム状でありかつその粒子
径が 1.0μ以下である範囲であり、モノマーの種類
にもよるが通常全七ツマ−の80重量%以下である。The soft vinyl polymer used in the present invention must be a polymer mainly composed of vinyl-modified silicone.The polymer mainly composed of vinyl-modified silicone is a homopolymer or copolymer of vinyl-modified silicone. The vinyl-modified silicone, which refers to a copolymer of a vinyl-modified silicone and another vinyl monomer, includes, for example, methacryloxypropylsiloxane, methacryloxypropylalkoxysilane, vinylalkoxysilane, and the like. Furthermore, as other vinyl monomers, all the monomers used in preparing the graft polymers mentioned above can be used. The proportion of other vinyl monomers to be used is such that the obtained copolymer is soft, that is, liquid or rubber-like, and has a particle size of 1.0μ or less, and the proportion of the other vinyl monomers is usually within the range of 1.0 μm or less, depending on the type of monomer. -80% by weight or less.
なお重合によって得る軟質ビニル重合体の粒径のコント
ロールは、エポキシ樹脂とグラフト重合体を形成するビ
ニルポリマーの種類、量、軟質ビニル重合体を形成する
モノマー組成の選択によって可能であるが、エポキシ樹
脂に導入する二重結合の量によってもコントロールする
事ができる。The particle size of the soft vinyl polymer obtained by polymerization can be controlled by selecting the type and amount of the vinyl polymer that forms the graft polymer with the epoxy resin, and the monomer composition that forms the soft vinyl polymer. It can also be controlled by the amount of double bonds introduced.
エポキシ樹脂とビニルポリマーのグラフト重合体以外の
エポキシ樹脂中にビニル変性シリコーン重合体を分散さ
せることは、例えばシランカップリング則、変性シリコ
ンオイル等を使用したとしても困難である。It is difficult to disperse a vinyl-modified silicone polymer in an epoxy resin other than a graft polymer of an epoxy resin and a vinyl polymer, even if the silane coupling rule, modified silicone oil, etc. are used, for example.
本発明の組成物は(a)の変性エポキシ樹脂を必須成分
とするが、所望により変性されていないエポキシ樹脂を
含有してもよい、変性されていないエポキシ樹脂として
は本発明の(a)に使用されるエポキシ樹脂が使用可能
であり、これらの中から選ばれた1種以上のエポキシ樹
脂を使用することができる。The composition of the present invention contains the modified epoxy resin (a) as an essential component, but may contain an unmodified epoxy resin as desired. Any epoxy resin can be used, and one or more epoxy resins selected from these can be used.
又、軟質ビニル重合体は使用されるエポキシ樹脂の合計
に対して5重量%以上必要であり1.特に10〜50重
量%が好ましい、5重量%未満では低応力化が達成され
ない。In addition, the amount of the soft vinyl polymer is required to be 5% by weight or more based on the total amount of epoxy resin used.1. In particular, 10 to 50% by weight is preferable, and if it is less than 5% by weight, stress reduction will not be achieved.
本発明に用いられるビスマレイミドは前記−最大(1)
で示されるものである。このようなビスマレイミドとし
ては、例えばN、 N”−エチレンビスマレイミド、N
、N’ −ヘキサメチレンビスマレイミド、N、N’
−m−フェニレンビスマレイミド、N、N’ −p−フ
ェニレンビスマレイミド、N、N’、4.4°−ジフェ
ニルメタンビスマレイミド、N、N′、4,4°−ジフ
ェニルエーテルビスマレイミド、N、N’ −メチレン
ビス(3−クロロ−p−)エムしン)ビスマレイミド、
N、N’、4.4’ −ジフェニルスルフォンビスマレ
イミド、N、N’、4,4°−ジシクロヘキシルメタン
ビスマレイミド、N、N’ −α。The bismaleimide used in the present invention is the above-mentioned maximum (1)
This is shown in . Such bismaleimides include, for example, N, N''-ethylene bismaleimide, N
, N'-hexamethylene bismaleimide, N, N'
-m-phenylene bismaleimide, N, N' -p-phenylene bismaleimide, N, N', 4.4°-diphenylmethane bismaleimide, N, N', 4,4°-diphenyl ether bismaleimide, N, N' -methylenebis(3-chloro-p-)emshin)bismaleimide,
N,N',4,4'-diphenylsulfone bismaleimide, N,N',4,4°-dicyclohexylmethane bismaleimide, N,N'-α.
α’−4,4°−ジメチレンシクロヘキサンビスマレイ
ミド、N、N’ −m−メタキシレンビスマレイミド、
N、N”、4,4° −ジフェニルシクロヘキサンビス
マレイミド等があり、これらの1種以上が使用できる。α'-4,4°-dimethylenecyclohexane bismaleimide, N,N'-m-methaxylene bismaleimide,
N, N'', 4,4°-diphenylcyclohexane bismaleimide, etc., and one or more of these can be used.
本発明に用いられる少なくともフェノール性水酸基を2
個以上存する化合物としては、ビスフェノールA、ビス
フェノールF、ビスフェノールS等のビスフェノール類
およびこれらのアルデヒド類との縮合反応物、フェノー
ル、クレゾール、キシレノール、レゾルシノール等のフ
ェノール類とアルデヒド類あるいはアルキルエーテル類
との縮合反応物等があり、これらの少な(とも1種ある
いは混合物が用いられる。At least 2 phenolic hydroxyl groups used in the present invention
Examples of compounds in which more than one compound exists are bisphenols such as bisphenol A, bisphenol F, and bisphenol S, and condensation products of these with aldehydes, and condensation products of phenols such as phenol, cresol, xylenol, and resorcinol with aldehydes or alkyl ethers. There are condensation reaction products, etc., and a small number of these products (one kind or a mixture can be used).
本発明に用いられる一般式(I)で示されるビスマレイ
ミドとポリフェノール化合物の反応物を得るには、ビス
マレイミドとポルフェノール化合物を固体状で粉砕混合
したものを加熱処理してプレポリマーとする方法もある
が、好ましくはビスマレイミドとボルフエノール化合物
を有機溶媒に溶解させ、加熱処理によりプレポリマーの
段階まで部分硬化させた後、貧溶媒中に排出し、析出し
てきた結晶を濾過乾燥してペレット状又は粉状とする、
この場合の加熱処理条件は一般には70〜220°Cの
t温度で5〜240分、望ましくは80〜200°Cの
温度で10〜180分とすることが適当である。In order to obtain the reaction product of bismaleimide and a polyphenol compound represented by the general formula (I) used in the present invention, a prepolymer is obtained by heat-treating a pulverized mixture of bismaleimide and a polyphenol compound in a solid state. However, preferably, the bismaleimide and borphenol compounds are dissolved in an organic solvent, partially cured to the prepolymer stage by heat treatment, and then discharged into a poor solvent, and the precipitated crystals are filtered and dried to form pellets. form or powder;
The heat treatment conditions in this case are generally 5 to 240 minutes at a temperature of 70 to 220°C, preferably 10 to 180 minutes at a temperature of 80 to 200°C.
使用可能な有機溶媒としては両成分と実質的に反応しな
い溶媒という点で制限を受けるが、このほかに再反応成
分に対する良溶媒であることが望ましい。通常、用いら
れる反応溶媒は塩化メチレン、ジクロロエタン、トリク
ロロチレンなどのハロゲン化炭化水素、アセトン、メチ
ルエチルケトン、シクロヘキサノン、ジイソプロピルケ
トンなどのケトン類、テトラヒドロフラン、ジオキサン
、メチルセロソルブなどのエーテル類、ベンゼン、トル
エン、クロロベンゼンなどの芳香族化合物、アセトニト
リル、N、N−ジメチルホルムアミド、N、N−ジメチ
ルアセトアミド、ジメチルスルホキシド、N−メチル−
2−ピロリドン、13−ジメチル−2−イミダゾリノン
などの非プロトン性極性溶媒等である。The organic solvent that can be used is limited in that it does not substantially react with both components, but it is also desirable that it be a good solvent for the re-reacted components. The reaction solvents usually used are halogenated hydrocarbons such as methylene chloride, dichloroethane, and trichlorothylene, ketones such as acetone, methyl ethyl ketone, cyclohexanone, and diisopropyl ketone, ethers such as tetrahydrofuran, dioxane, and methyl cellosolve, benzene, toluene, and chlorobenzene. Aromatic compounds such as acetonitrile, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, N-methyl-
Examples include aprotic polar solvents such as 2-pyrrolidone and 13-dimethyl-2-imidazolinone.
ビスマレイミドとポリフェノールを反応させてプレポリ
マーを製造するにあたっては触媒を使用することも可能
である。触媒としてはトリブチルホスフィン、トリオク
チルホスフィン、トリシクロヘキシルホスフィン、トリ
フェニルホスフィン、トリベンジルホスフィン、トリト
リルホスフィン、ρ−スチリルジフェニルホスフィン等
のホスフィン類、1.2−ビス (ジフェニルホスフィ
ノ)エタン、1.4−ビス (ジフェニルホスフィノ)
ブタン等のジフェニルホスフィノアルカン類、トリフェ
ニルホスフィン・トリフェニルボラン、テトラフェニル
ホスホニウム・テトラフェニルボレート、トリエチルア
ンモニウム・テトラフェニルボレート等のホウ素化合物
、1,8−ジアザ−ビシクロ(5,40)ウンデセン−
7及びその誘導体、トリス(3,6−ジオキサへブチル
)アミンに代表されるトリス(ポリオキサアルキル)ア
ミン類等が挙げられる。その他三級アミン類、イミダゾ
ール類も使用可能であるが、反応性の点からトリス(ポ
リオキサアルキル)アミン類が最も好ましい。It is also possible to use a catalyst in producing a prepolymer by reacting bismaleimide and polyphenol. Examples of catalysts include phosphines such as tributylphosphine, trioctylphosphine, tricyclohexylphosphine, triphenylphosphine, tribenzylphosphine, tritolylphosphine, and ρ-styryldiphenylphosphine, 1.2-bis(diphenylphosphino)ethane, 1. 4-bis (diphenylphosphino)
Diphenylphosphinoalkanes such as butane, boron compounds such as triphenylphosphine/triphenylborane, tetraphenylphosphonium/tetraphenylborate, triethylammonium/tetraphenylborate, 1,8-diaza-bicyclo(5,40)undecene-
7 and derivatives thereof, tris(polyoxaalkyl)amines represented by tris(3,6-dioxahebutyl)amine, and the like. Other tertiary amines and imidazoles can also be used, but tris(polyoxaalkyl)amines are most preferred from the viewpoint of reactivity.
触媒の使用量はビスマレイミドとポリフェノール化合物
の総量100部に対した0、1〜10重量部である。The amount of catalyst used is 0.1 to 10 parts by weight based on 100 parts of the total amount of bismaleimide and polyphenol compound.
ビスマレイミドとポリフェノール化合物の使用割合はポ
リフェノール化合物100重量部に対しててビスマレイ
ミド10帽1部以上であればよく、好ましくは200重
量部から1000重量部の範囲である。 1001i
1部未満では十分な半田体熱性が得られない。The ratio of bismaleimide and polyphenol compound to be used is at least 1 part per 10 parts by weight of bismaleimide per 100 parts by weight of the polyphenol compound, preferably in the range of 200 parts by weight to 1000 parts by weight. 1001i
If the amount is less than 1 part, sufficient solder heat properties cannot be obtained.
プレポリマーの使用量は樹脂組成物中にマレイミド化合
物が30〜80重量%含まれるように配合することが好
ましい。The prepolymer is preferably used in an amount such that the maleimide compound is contained in the resin composition in an amount of 30 to 80% by weight.
本発明に用いられる(c)の無H賞充填材としては例え
ば結晶性シリカ、溶融シリカ、アルミナ、タルク、ケイ
酸カルシウム、炭酸カルシウム、マイカ、クレー、チタ
ンホワイト等の粉体、あるいはガラス繊維、炭素繊維等
の単独または混合物が挙げられるが、熱膨張率、熱伝導
率等の点から通常は結晶性、溶融性等のシリカ粉末が用
いられる。その配合量は(a) 、(b)の総量100
!置部に対して100〜600重量部が好ましく、1
00重量部未満では熱膨張率が大きく、良好な耐衝撃性
は得られない。また600重量部を超えると樹脂の流動
性が低下し成形性が悪く実用に供し難い。Examples of the H-free filler (c) used in the present invention include powders such as crystalline silica, fused silica, alumina, talc, calcium silicate, calcium carbonate, mica, clay, and titanium white, or glass fibers. Examples include carbon fibers alone or in mixtures, but from the viewpoint of thermal expansion coefficient, thermal conductivity, etc., crystalline, meltable, etc. silica powder is usually used. The total amount of (a) and (b) is 100
! It is preferably 100 to 600 parts by weight, and 1
If the amount is less than 0.00 parts by weight, the coefficient of thermal expansion will be large and good impact resistance will not be obtained. Moreover, if it exceeds 600 parts by weight, the fluidity of the resin decreases and moldability deteriorates, making it difficult to put it into practical use.
本発明の半導体封止用樹脂組成物は前記(a)、(b)
、(c)を必須成分として含有するが、実用に際して
はイミダゾール類、三級アミン類、4級アンモニウム塩
類、有機金属゛化合物類、有機ホスフィン類等の硬化促
進剤、脂肪酸アミド、脂肪酸塩、ワックス等の離型剤、
ブロム化合物、アンチモン、リン等の難燃剤、カーボン
ブラック等の着色剤、シランカップリング荊、アミン類
、フェノール類等を適宜配合することも可能である0本
発明の半導体封止用樹脂組成物は、ミキサー等によって
十分プレミックスした後、熱ロール、あるいはニーグー
の如き溶融混合機で混練し、次いで冷却粉砕を行うこと
により、成形材料として容易に得ることが出来る。The resin composition for semiconductor encapsulation of the present invention includes the above (a) and (b).
, (c) as essential components, but in practical use, curing accelerators such as imidazoles, tertiary amines, quaternary ammonium salts, organometallic compounds, organic phosphines, fatty acid amides, fatty acid salts, waxes, etc. mold release agents such as
It is also possible to appropriately incorporate flame retardants such as bromine compounds, antimony, and phosphorus, colorants such as carbon black, silane coupling agents, amines, phenols, etc. The resin composition for semiconductor encapsulation of the present invention It can be easily obtained as a molding material by sufficiently premixing using a mixer or the like, kneading with a hot roll or a melt mixer such as a Nigu, and then cooling and pulverizing.
本発明を実施例によって具体的に説明するが、本発明は
実施例に限定されるものではない、以下において部は特
記せぬ限り重量部を意味する。The present invention will be specifically explained with reference to examples, but the present invention is not limited to the examples. In the following, parts mean parts by weight unless otherwise specified.
(変性エポキシ樹脂の製造)
製造例1
オルソクレゾールノボラックエポキシ樹脂(エポキシ当
1217) 100部、トルエン10部、メタクリル酸
1部を3級アミンの存在下で120〜125°Cで2時
間反応させた後、ブチルアクリレート3.6部、グリシ
ジルヌククリレート0.1部、t−ブチルパーオキシ2
−エチルヘキサノエート0.05部を100°Cで1時
間反応させる。さらにメタアクリロキシプロピルシロキ
サン30部、ネオペンチルグリコールジアクリレート0
.6部、1.1−ビス(t−ブチルパーオキシ)3,3
.5− トリシクロヘキサン0.15部を連続滴下しな
がら4時間、その後更に4時間反応させた後、減圧にて
脱溶剤し、粒径0.2〜0.5μの軟質ビニル重合体が
分散した変性エポキシ樹脂(a−1)(エポキシ当量2
95)を得た。(Production of modified epoxy resin) Production Example 1 100 parts of orthocresol novolak epoxy resin (1217 epoxy resin), 10 parts of toluene, and 1 part of methacrylic acid were reacted at 120 to 125°C for 2 hours in the presence of a tertiary amine. After that, 3.6 parts of butyl acrylate, 0.1 part of glycidyl nucleate, 2 parts of t-butylperoxy
- 0.05 part of ethylhexanoate is reacted at 100°C for 1 hour. Furthermore, 30 parts of methacryloxypropyl siloxane, 0 parts of neopentyl glycol diacrylate
.. 6 parts, 1,1-bis(t-butylperoxy)3,3
.. 5- After reacting for 4 hours while continuously adding 0.15 parts of tricyclohexane dropwise, and then reacting for another 4 hours, the solvent was removed under reduced pressure to form a modified product in which a soft vinyl polymer with a particle size of 0.2 to 0.5μ was dispersed. Epoxy resin (a-1) (epoxy equivalent 2
95) was obtained.
製造例2
製造例1においてメタクリル酸の量が1.2部、ブチル
アクリレートの量が5.0部、メタアクリロキシプロピ
ルシロキサンの量が55部、ネオペンチルグリコールジ
アクリレートの量が1.0部である以外は製造例1と同
様にして、粒径0.2〜0.5μの軟質ビニル重合体が
分散した変性エポキシ樹脂(a−2)(エポキシ当量3
15)を得た。Production Example 2 In Production Example 1, the amount of methacrylic acid was 1.2 parts, the amount of butyl acrylate was 5.0 parts, the amount of methacryloxypropylsiloxane was 55 parts, and the amount of neopentyl glycol diacrylate was 1.0 parts. Modified epoxy resin (a-2) in which a soft vinyl polymer with a particle size of 0.2 to 0.5 μm was dispersed (epoxy equivalent weight 3
15) was obtained.
(ビスマレイミドとポリフェノール化合物の反応物の製
造)
製造例3
N、N’−4,4’−ジフェニルメタンビスマレイミド
(三井東圧化学■製)100部、フェノールノボラック
樹脂(日本火薬側型、軟化点85℃)25部、N−メチ
ル−2−ピロリドン185部、トリス(3,6−シオキ
サヘプチル)アミン1.2部を還流器つきフラスコにと
り、120°Cに保ち3時間反応させた0反応液を10
00部のイオン交換水に滴下し、生成する懸濁物を濾過
し、50°Cで24時間真空乾燥し、プレポリマー(b
−1)を得た。得られた反応物の赤外線吸収スペクトル
で反応前と比較すると、波数3100clI−1の二重
結合に由来する特性吸収の減少、1200cm−’にエ
ーテル結合に由来する特性吸収が確認された、反応前後
の赤外線吸収スペクトルを第1図と第2図に示した。(Production of reaction product of bismaleimide and polyphenol compound) Production example 3 100 parts of N,N'-4,4'-diphenylmethane bismaleimide (manufactured by Mitsui Toatsu Chemical Co., Ltd.), phenol novolac resin (Japanese Gunpowder type, softening point 85°C), 185 parts of N-methyl-2-pyrrolidone, and 1.2 parts of tris(3,6-thioxaheptyl)amine were placed in a flask equipped with a reflux device, and kept at 120°C and reacted for 3 hours. 10 drops of liquid
00 parts of ion-exchanged water, the resulting suspension was filtered, vacuum-dried at 50°C for 24 hours, and the prepolymer (b
-1) was obtained. When comparing the infrared absorption spectrum of the obtained reaction product with before and after the reaction, a decrease in the characteristic absorption derived from the double bond at a wave number of 3100 clI-1 and a characteristic absorption derived from the ether bond at 1200 cm-' were confirmed, both before and after the reaction. The infrared absorption spectra of this material are shown in Figures 1 and 2.
実施例1〜2および比較例1〜5
表−1に示す原料をミキサーで混合し、更に110〜1
20 ’Cの熱ロールにて5分間溶融混合後、冷却粉砕
し打錠した成形用慴脂組成物を得た。Examples 1 to 2 and Comparative Examples 1 to 5 The raw materials shown in Table 1 were mixed in a mixer, and further 110 to 1
After melt-mixing for 5 minutes using a heated roll at 20'C, a resin composition for molding was obtained by cooling, crushing, and tableting.
この組成物を用い、トランスファー成形(185°C1
30kg/d、3分間)により、試験用の100ピンフ
ラツトパツケージ(20mX30aX2.5mm、 i
oam×1OIl111の試験用素子径13I) 、
及び物性測定用の試験片を成形し、180℃で6時間後
硬化した。Using this composition, transfer molding (185°C1
30kg/d for 3 minutes) to test a 100-pin flat package (20m x 30a x 2.5mm, i
oam×1OIl111 test element diameter 13I),
A test piece for measuring physical properties was molded and post-cured at 180°C for 6 hours.
試験結果を表−2に示す。The test results are shown in Table-2.
〔発明の効果]
実施例及び比較例にて説明した来た如く、本発明による
半導体封止用樹脂組成物は低応力、半田耐熱性に優れ、
更に金型汚れが少ないことから生産性においても優れた
効果を有する。従って本発明の樹脂組成物を集積度の高
い半導体あるいはフラットパッケージの如き小型・薄型
の半導体の封止に用いた場合、優れた信幀性と高い生産
性を得ることができ、工業的に有益な発明であるといえ
る。[Effects of the Invention] As explained in the Examples and Comparative Examples, the resin composition for semiconductor encapsulation according to the present invention has low stress and excellent soldering heat resistance,
Furthermore, since there is less mold staining, it has an excellent effect on productivity. Therefore, when the resin composition of the present invention is used for encapsulating highly integrated semiconductors or small and thin semiconductors such as flat packages, excellent reliability and high productivity can be obtained, and it is industrially beneficial. It can be said that this is a great invention.
第1図はビスマレイミドとフ為ノールノボランクの反応
生成物の赤外線吸収スペクトル、第2図は同じく反応前
の赤外線吸収スペクトルを表した図である。FIG. 1 shows an infrared absorption spectrum of a reaction product of bismaleimide and phenol novolank, and FIG. 2 shows an infrared absorption spectrum before the reaction.
Claims (1)
体中に、ビニル変性シリコーン重合体を主体とする軟質
ビニル重合体が1.0μ以下の粒子径で均一に分散され
た変性エポキシ樹脂、 (b)一般式(I)で示されるビスマレイミドと少なく
ともフェノール性水酸基を2個以上有するポリフェノー
ル化合物の反応物、 ▲数式、化学式、表等があります▼(I) (R_1は少なくとも2個の炭素数を有する2価の有機
基を表す、) (c)無機充填剤 を含有してなることを特徴とする半導体封止用樹脂組成
物。[Scope of Claims] (a) A modified structure in which a soft vinyl polymer mainly composed of a vinyl-modified silicone polymer is uniformly dispersed in a graft polymer of an epoxy resin and a vinyl polymer with a particle size of 1.0μ or less. Epoxy resin, (b) Reaction product of bismaleimide represented by the general formula (I) and a polyphenol compound having at least two or more phenolic hydroxyl groups, ▲There are mathematical formulas, chemical formulas, tables, etc.▼(I) (R_1 is at least 2 A resin composition for semiconductor encapsulation, characterized in that it contains (c) an inorganic filler representing a divalent organic group having a carbon number of .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18357688A JPH0234623A (en) | 1988-07-25 | 1988-07-25 | Resin composition for semiconductor sealing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18357688A JPH0234623A (en) | 1988-07-25 | 1988-07-25 | Resin composition for semiconductor sealing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0234623A true JPH0234623A (en) | 1990-02-05 |
Family
ID=16138231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18357688A Pending JPH0234623A (en) | 1988-07-25 | 1988-07-25 | Resin composition for semiconductor sealing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0234623A (en) |
-
1988
- 1988-07-25 JP JP18357688A patent/JPH0234623A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI804615B (en) | Thermosetting maleimide resin composition for semiconductor sealing and semiconductor device | |
JP2815414B2 (en) | Resin composition for semiconductor encapsulation | |
JPH0531883B2 (en) | ||
JP2815413B2 (en) | Resin composition for semiconductor encapsulation | |
JP2815408B2 (en) | Resin composition for semiconductor encapsulation | |
EP0632059A2 (en) | Interpenetrating networks from unsaturated monomers and thermosetting resins | |
JPH0232117A (en) | Resin composition for sealing semiconductor | |
JPH0234623A (en) | Resin composition for semiconductor sealing | |
JP7351297B2 (en) | Thermosetting resin composition for semiconductor encapsulation materials, semiconductor encapsulation materials, and semiconductor devices | |
JPH0588887B2 (en) | ||
JP2823704B2 (en) | Resin composition for semiconductor encapsulation | |
JPH02212554A (en) | Semiconductor sealing resin composition | |
JPH0531884B2 (en) | ||
JPH02209964A (en) | Resin composition for sealing semiconductor | |
JPH0229419A (en) | Sealing resin composition for semiconductor | |
JPH02212512A (en) | Resin composition for semiconductor sealing | |
JPH0236219A (en) | Resin composition for sealing semiconductor | |
JPH02212513A (en) | Resin composition for semiconductor sealing | |
JPH02132118A (en) | Resin composition for semiconductor sealing use | |
JPH02302422A (en) | Resin composition for semiconductor sealing | |
JPH02209965A (en) | Resin composition for sealing semiconductor | |
JPH0238413A (en) | Resin composition for semiconductor sealing | |
JPH02212553A (en) | Semiconductor sealing resin composition | |
JPH01198659A (en) | Resin composition for sealing semiconductor | |
JPH0588864B2 (en) |