JPH023257B2 - - Google Patents

Info

Publication number
JPH023257B2
JPH023257B2 JP56076697A JP7669781A JPH023257B2 JP H023257 B2 JPH023257 B2 JP H023257B2 JP 56076697 A JP56076697 A JP 56076697A JP 7669781 A JP7669781 A JP 7669781A JP H023257 B2 JPH023257 B2 JP H023257B2
Authority
JP
Japan
Prior art keywords
deuterium
hydrogen
solid material
semiconductor
negative ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56076697A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57191940A (en
Inventor
Hideo Akimune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyoto University
Original Assignee
Kyoto University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyoto University filed Critical Kyoto University
Priority to JP56076697A priority Critical patent/JPS57191940A/ja
Priority to US06/349,472 priority patent/US4581195A/en
Publication of JPS57191940A publication Critical patent/JPS57191940A/ja
Publication of JPH023257B2 publication Critical patent/JPH023257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/028—Negative ion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
JP56076697A 1981-02-22 1981-05-22 Negative hydrogen or heavy hydrogen ion source using semiconductor Granted JPS57191940A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56076697A JPS57191940A (en) 1981-05-22 1981-05-22 Negative hydrogen or heavy hydrogen ion source using semiconductor
US06/349,472 US4581195A (en) 1981-02-22 1982-02-17 Negative hydrogen or deuterium ion source using semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076697A JPS57191940A (en) 1981-05-22 1981-05-22 Negative hydrogen or heavy hydrogen ion source using semiconductor

Publications (2)

Publication Number Publication Date
JPS57191940A JPS57191940A (en) 1982-11-25
JPH023257B2 true JPH023257B2 (enExample) 1990-01-23

Family

ID=13612676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076697A Granted JPS57191940A (en) 1981-02-22 1981-05-22 Negative hydrogen or heavy hydrogen ion source using semiconductor

Country Status (2)

Country Link
US (1) US4581195A (enExample)
JP (1) JPS57191940A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5106570A (en) * 1990-08-02 1992-04-21 The United States Of America As Represented By The Secretary Of The Air Force Intense negative ion source
JPH07101640B2 (ja) * 1991-07-31 1995-11-01 雅弘 西川 中性粒子ビーム照射装置
US6017806A (en) * 1997-07-28 2000-01-25 Texas Instruments Incorporated Method to enhance deuterium anneal/implant to reduce channel-hot carrier degradation
WO2006128109A2 (en) * 2005-05-26 2006-11-30 Spindletop Corporation Methods and apparatus for energy conversion using materials comprising molecular deuterium and molecular hydrogen-deuterium
US7877897B2 (en) * 2008-12-16 2011-02-01 Skechers U.S.A., Inc. Ii Shoe
RU2619923C2 (ru) * 2012-09-04 2017-05-22 Трай Альфа Энерджи, Инк. Инжектор пучка нейтральных частиц на основе отрицательных ионов
CN115747743B (zh) * 2022-12-20 2023-11-28 安徽纯源镀膜科技有限公司 一种工件镀膜和高温渗氘气设备及工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2279586A (en) * 1939-02-04 1942-04-14 Slayter Electronic Corp Electric discharge system
US2735019A (en) * 1952-07-02 1956-02-14 Particle accelerator
US3336475A (en) * 1964-02-05 1967-08-15 Electro Optical Systems Inc Device for forming negative ions from iodine gas and a lanthanum boride contact ionizer surface
FR2257214A7 (en) * 1973-08-24 1975-08-01 Robisco Bernard Corona effect air ionising device - has asymmetric electrodes producing positive or negative ions
DE2804393C2 (de) * 1978-02-02 1987-01-02 Jens Prof. Dr. 8520 Buckenhof Christiansen Verfahren zum Erzeugen und Beschleunigen von Elektronen bzw. Ionen in einem Entladungsgefäß, sowie dazugehöriger Teilchenbeschleuniger und ferner dazugehörige Anwendungen des Verfahrens
US4298798A (en) * 1979-11-29 1981-11-03 Thermo Electron Corporation Method and apparatus for producing negative ions

Also Published As

Publication number Publication date
US4581195A (en) 1986-04-08
JPS57191940A (en) 1982-11-25

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