JPH0232534A - Barrel type susceptor - Google Patents
Barrel type susceptorInfo
- Publication number
- JPH0232534A JPH0232534A JP18174188A JP18174188A JPH0232534A JP H0232534 A JPH0232534 A JP H0232534A JP 18174188 A JP18174188 A JP 18174188A JP 18174188 A JP18174188 A JP 18174188A JP H0232534 A JPH0232534 A JP H0232534A
- Authority
- JP
- Japan
- Prior art keywords
- monitor
- barrel
- semiconductor substrate
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000012544 monitoring process Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はバレル型サセプタに係り、特にモニタチップを
嵌合保持するためのモニタポケットに関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a barrel-type susceptor, and particularly to a monitor pocket for fitting and holding a monitor chip.
従来のこの種のバレル型サセプタを、第6図にバレル型
エピタキシャル装置の断面図、第7図にバレル型サセプ
タの正面図及び第8図にバレル型サセプタの平面図を示
して説明する。A conventional barrel-type susceptor of this type will be explained with reference to FIG. 6, which is a sectional view of the barrel-type epitaxial device, FIG. 7, which is a front view of the barrel-type susceptor, and FIG. 8, which is a plan view of the barrel-type susceptor.
すなわち、第6図に示す如く、半導体基板上にエピタキ
シャル成長層を形成するためのバレル型エピタキシャル
装置200は、上部が開口され、断面が0字状を呈し、
内部を反応室201aとする透明石英製のペルジャー2
01と、このペルジャー201の上部開口部を閉塞し、
中央部において、回転自在なりオーツハンガー202を
、上記反応室201a内へ挿通ずると共に、反応ガスの
ガス導入口203が形成された透明石英製のペルジャー
カバー204と、上記ペルジャー201の外壁に設けら
れ、反応室201a内を輻射加熱するクォーツハロゲン
ランプ205と、上記反応室201a雰囲気内にあり、
上記クォーツハンガー202の下端部に吊設された縦長
中空状のバレル型サセプタ206と、上記クォーツハン
ガー202内及びバレル型サセプタ206内に嵌挿され
、内設された図示略す温度センサーによりバレル型サセ
プタ206の温度を検知するセンサーシース207とか
ら構成されている。That is, as shown in FIG. 6, a barrel-type epitaxial apparatus 200 for forming an epitaxial growth layer on a semiconductor substrate has an opening at the top and a 0-shaped cross section.
A Pelger 2 made of transparent quartz with a reaction chamber 201a inside.
01 and close the upper opening of this Pelger 201,
In the central part, a rotatable oat hanger 202 is inserted into the reaction chamber 201a, and a transparent quartz Pelger cover 204 is formed with a gas inlet 203 for the reaction gas, and a Pelger cover 204 is provided on the outer wall of the Pelger 201. and a quartz halogen lamp 205 that heats the inside of the reaction chamber 201a by radiation, and is in the atmosphere of the reaction chamber 201a,
A vertically hollow barrel-shaped susceptor 206 is suspended from the lower end of the quartz hanger 202, and a temperature sensor (not shown) is inserted into the quartz hanger 202 and the barrel-shaped susceptor 206. and a sensor sheath 207 that detects the temperature of 206.
更に、第7図及び第8図に示す如く、上記バレル型サセ
プタ206は、表面に炭化珪素皮膜が被着された炭素基
材より成り、横断面は正多角形を呈し、外側面は、下端
に近づくに従って拡幅した複数の面A−Hから構成され
ている。そして、これら各面A−Hには、半導体基板を
嵌合保持する複数の円形の凹部、つまりウェハポケット
208が上下方向に形成されると共に、面Aには、半導
体基板のエピタキシャル成長時に、エピタキシャル膜厚
と比抵抗とを、モニタするためのモニタチップを嵌合保
持する複数の正方形の凹部、つまりモニタポケット20
9が、上記ウェハポケット208の上下に配設されてい
る。上記モニタチップは、半導体基板を矩形状に切断し
たものであり、通常、面積が10X10n!〜20X2
0n”で厚さが0.3鶴〜0.7日が好適である。Furthermore, as shown in FIGS. 7 and 8, the barrel-shaped susceptor 206 is made of a carbon base material whose surface is covered with a silicon carbide film, has a regular polygonal cross section, and has an outer surface with a lower end. It is composed of a plurality of planes A-H that widen as they approach . A plurality of circular recesses, that is, wafer pockets 208, for fitting and holding the semiconductor substrate are formed in the vertical direction on each of these surfaces A-H, and on surface A, an epitaxial film is formed during epitaxial growth of the semiconductor substrate. A plurality of square recesses, that is, monitor pockets 20, which fit and hold monitor chips for monitoring thickness and resistivity.
9 are arranged above and below the wafer pocket 208. The above-mentioned monitor chip is a semiconductor substrate cut into a rectangular shape, and usually has an area of 10×10n! ~20X2
A thickness of 0.3 to 0.7 days is suitable.
斯くして、バレル型サセプタ206に嵌合保持された半
導体基板におけるエピタキシャル成長層の形成は、上記
サセプタ206を、クォーツハンガー202により回転
させるとともに、同サセプタ206に嵌合保持されたモ
ニタチップによりエピタキシャル膜厚と比抵抗とをモニ
タしつつ、ガス導入口203より注入される反応ガス及
びクォーツハロゲンランプ205の輻射熱を以て行なわ
れるのが公知である。In this way, the epitaxial growth layer is formed on the semiconductor substrate fitted and held by the barrel-shaped susceptor 206 by rotating the susceptor 206 by the quartz hanger 202 and growing the epitaxial layer by the monitor chip fitted and held by the susceptor 206. It is known that this is carried out using a reaction gas injected from a gas inlet 203 and radiant heat from a quartz halogen lamp 205 while monitoring the thickness and specific resistance.
然し乍ら、上述した従来のバレル型サセプタにおいては
、モニタチップが、概ね垂直面である面Aに形成された
モニタポケット209に嵌合保持され、而も反応ガスを
流しつつ、回転運動が行なわれるため、反応ガスの浸入
や回転振動等によりモニタチップが浮き上った場合、こ
れが、モニタポケット209より脱落し、半導体基板の
エピタキシャルデータが得られなくなる他、落下したモ
ニタチップを、装置より取り除かなければならない等品
質及び作業性が低下するという問題点があった。However, in the conventional barrel-type susceptor described above, the monitor chip is fitted and held in the monitor pocket 209 formed on the substantially vertical surface A, and rotational movement is performed while the reaction gas is flowing. If the monitor chip lifts up due to infiltration of reaction gas or rotational vibration, it will fall out of the monitor pocket 209, making it impossible to obtain epitaxial data of the semiconductor substrate, and it will be necessary to remove the dropped monitor chip from the device. There was a problem that quality and workability deteriorated.
本発明の目的は、上述の問題点に鑑み、モニタチップの
保持性が向上できるバレル型サセプタを提供するもので
ある。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a barrel-shaped susceptor that can improve the ability to hold a monitor chip.
本発明は上述した目的を達成するため、側壁に、半導体
基板を嵌合保持する凹部(ウェハポケット)及び上記半
導体基板の処理状況をモニタするためのモニタチップを
嵌合保持する凹部(モニタポケット)を形成したバレル
型サセプタにおいて、上記モニタポケット、頂角を上下
左右に配した四角形の下方の頂角を含む2辺の部分を切
欠いた形状にしたものである。In order to achieve the above-mentioned object, the present invention includes a recess (wafer pocket) into which a semiconductor substrate is fitted and held, and a recess (monitor pocket) into which a monitor chip for monitoring the processing status of the semiconductor substrate is fitted and held, in a side wall. In the barrel-type susceptor, the monitor pocket has a rectangular shape with apex angles arranged vertically and horizontally, with two sides including the lower apex angles cut out.
本発明においては、モニタポケットは、頂角を上下左右
に配した四角形の下方の頂角を含む2辺の部分を切欠い
た形状であるので、モニタチップは、モニタポケットの
下側の2辺或いはこの2辺の夫々下端部により支持され
、更にモニタチップの下部が、当該2辺より下方に突出
するため、上記2辺又はこれらの下端部を支点として、
回転し、モニタポケットの底面を押圧する。In the present invention, the monitor pocket has a shape in which two sides including the lower apex angles of a rectangle with apex angles arranged on the top, bottom, left and right sides are cut out. It is supported by the lower ends of each of these two sides, and the lower part of the monitor chip protrudes downward from the two sides.
Rotate and press the bottom of the monitor pocket.
C実施例〕
以下、本発明バレル型サセプタに係る一実施例を、第1
図に正面図、第2図に平面図、第3図に要部拡大図、第
4図にモニタポケットの正面図及び第5図にモニタポケ
ットの断面図を示して説明する。C Embodiment] Hereinafter, one embodiment of the barrel-type susceptor of the present invention will be described as the first embodiment.
The following description will be given with reference to FIG. 2 showing a front view, FIG. 2 a plan view, FIG. 3 an enlarged view of main parts, FIG. 4 a front view of the monitor pocket, and FIG. 5 a sectional view of the monitor pocket.
即ち、バレル型サセプタは、第1図及び第3図に示す如
く、表面に炭化珪素皮膜を被着した炭素基材により縦長
中空状に成形され、その横断面は、正多角形を呈し、外
側面は、下端に近づくに伴って拡幅した複数の面A−H
により多面体に構成されている。又、これら各面A−H
には、半導体基板を嵌合保持する複数の円形凹部(ウエ
ハポケノ))108が、上下方向に並設されると共に、
面Aには、半導体基板のエピタキシャル成長時に、エピ
タキシャル膜厚と比抵抗とをモニタするためのモニタチ
ップを嵌合保持する複数の凹部(モニタポケット)10
9が、上記ウェハポケット108の上下に並列に配設さ
れている。That is, as shown in FIGS. 1 and 3, the barrel-type susceptor is formed into a vertically hollow shape from a carbon base material whose surface is covered with a silicon carbide film, and its cross section is a regular polygon, and the outside The side surface has multiple surfaces A-H that widen as it approaches the bottom end.
It is composed of polyhedrons. Also, each of these surfaces A-H
A plurality of circular recesses (wafer pockets) 108 for fitting and holding a semiconductor substrate are arranged in parallel in the vertical direction, and
Surface A has a plurality of recesses (monitor pockets) 10 that fit and hold monitor chips for monitoring epitaxial film thickness and resistivity during epitaxial growth of a semiconductor substrate.
9 are arranged in parallel above and below the wafer pocket 108.
上記モニタポケット109は、第4図及び第5図に示す
如く、頂角を上下左右に配した菱形の下方の頂角Kを含
む2辺1.mの部分を切欠いた形状を存している。従っ
て、モニタチップは、モニタポケット109の下側の辺
l並びに辺m又は辺l上の下端点し並びに辺m上の下端
点Mを以て炎付され、而もモニタチップの下部は、上記
辺l。As shown in FIGS. 4 and 5, the monitor pocket 109 has two sides 1. It has a shape with part m cut out. Therefore, the monitor chip is ignited at the lower side l of the monitor pocket 109, the lower end point on side m or side l, and the lower end point M on side m; .
mより下方に突出するので、反応ガスが浸入したり、回
転時の振動によりモニタチップが浮き上っても、モニタ
チップは、辺l1m若しくは点し。Since it protrudes below the height 1m, even if the reactant gas infiltrates or the monitor chip lifts up due to vibration during rotation, the monitor chip will remain on the side l1m or point.
Mを支点として、回転し、モニタポケット109の底面
を押圧するので、モニタポケット109におけるモニタ
チップの保持性が向上され、その脱落が防止できる。Since it rotates about M as a fulcrum and presses the bottom surface of the monitor pocket 109, the retention of the monitor chip in the monitor pocket 109 is improved and it is possible to prevent the chip from falling off.
以上説明したように本発明によれば、凹部であるモニタ
ポケットを、頂角を上下左右に配した四 i角形の下方
の頂角を含む2辺の部分を切欠いた形状にしたので、モ
ニタチップのモニタポケットにおける嵌合保持性が向上
でき、よって半導体基板処理中におけるモニタチップの
脱落が防止できるため、半導体基板の処理データの遺失
が防止できると共に、落下したモニタチップの回収に伴
う装置保守が不要となり、品質及び作業性が向上できる
等の特有の効果により上述した課題を解決し得る。As explained above, according to the present invention, the monitor pocket, which is a concave portion, is formed into a shape in which two sides including the lower apex angle of the i-gon are cut out, and the apex angles are arranged vertically and horizontally. This improves the fitting retention in the monitor pocket and prevents the monitor chip from falling off during semiconductor substrate processing, which prevents the loss of semiconductor substrate processing data and reduces equipment maintenance associated with recovering fallen monitor chips. The above-mentioned problems can be solved by the unique effects such as eliminating the need for this and improving quality and workability.
第1図乃至第5図は本発明サセプタに係る一実施例を示
すもので、第1図は正面図、第2図は平面図、第3図は
要部拡大図、第4図はモニタポケットの正面図、第5図
は第4図のX−Y断面図、第6図乃至第8図は従来例を
示すもので、第6図はバレル型エピタキシャル装置の断
面図、第7図はバレル型サセプタの正面図、第8図は同
平面図である。
106・・・バレル型サセプタ、10日・・・ウェハポ
ケット、109・・・モニタポケット、A、B、C。
D、E、F、G、H・・・面、K ・・・頂角、!4.
m・・−辺、L、M・・・点。
面E
木介朗h−レル型ザ仁アタの正m区
第1図
、iiρ月八゛へルi1や七フ0夕の乎面図第2図
A1g月゛す′七フ゛タリf音P11.尺ヤリ第3図
イ道釆ノ\ルル型プ妃デタ0正面図
第7図
第
図
僅采バレノム型すヒアタの乎a5り
第
図Figures 1 to 5 show an embodiment of the susceptor of the present invention, in which Figure 1 is a front view, Figure 2 is a plan view, Figure 3 is an enlarged view of the main parts, and Figure 4 is a monitor pocket. 5 is an X-Y sectional view of FIG. 4, FIGS. 6 to 8 show conventional examples, FIG. 6 is a sectional view of a barrel-type epitaxial device, and FIG. 7 is a barrel-type epitaxial device. FIG. 8 is a front view of the mold susceptor. 106... Barrel type susceptor, 10th... Wafer pocket, 109... Monitor pocket, A, B, C. D, E, F, G, H...face, K...vertex angle,! 4.
m...-side, L, M...point. Side E Kisukerou h-rel type Zani Ata's regular m ward Figure 1, iiρ Monthly 8th heel i1 and Seventh 0 evening's surface map Figure 2 A1g Monthly 's' Seventh digit f sound P11. Shaku Yari Diagram 3 Idokanno \ Lulu Type Princess Deta 0 Front View Figure 7 Diagram Slightly Glazed Balenom Type Suhiata's A5 Ri Diagram
Claims (1)
ト)及び上記半導体基板の処理状況をモニタするための
モニタチップを嵌合保持する凹部(モニタポケット)を
形成したバレル型サセプタにおいて、 上記モニタポケットは、頂角を上下左右に配した四角形
の下方の頂角を含む2辺の部分を切欠いた形状であるこ
とを特徴とするバレル型サセプタ。[Claims of Claims] A barrel-shaped barrel having a side wall formed with a recess (wafer pocket) for fitting and holding a semiconductor substrate and a recess (monitor pocket) for fitting and holding a monitor chip for monitoring the processing status of the semiconductor substrate. The barrel-type susceptor, wherein the monitor pocket has a shape in which two sides including the lower apex angles of a rectangle with apex angles arranged vertically and horizontally are cut out.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18174188A JPH0232534A (en) | 1988-07-22 | 1988-07-22 | Barrel type susceptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18174188A JPH0232534A (en) | 1988-07-22 | 1988-07-22 | Barrel type susceptor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0232534A true JPH0232534A (en) | 1990-02-02 |
Family
ID=16106076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18174188A Pending JPH0232534A (en) | 1988-07-22 | 1988-07-22 | Barrel type susceptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0232534A (en) |
-
1988
- 1988-07-22 JP JP18174188A patent/JPH0232534A/en active Pending
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