JPH0231496A - Manufacture of aluminum nitride wiring board - Google Patents
Manufacture of aluminum nitride wiring boardInfo
- Publication number
- JPH0231496A JPH0231496A JP18208388A JP18208388A JPH0231496A JP H0231496 A JPH0231496 A JP H0231496A JP 18208388 A JP18208388 A JP 18208388A JP 18208388 A JP18208388 A JP 18208388A JP H0231496 A JPH0231496 A JP H0231496A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- green sheet
- wiring board
- zrb2
- aluminum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000843 powder Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 22
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000292 calcium oxide Substances 0.000 claims abstract description 16
- XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical compound [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011230 binding agent Substances 0.000 claims abstract description 6
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 5
- 239000003960 organic solvent Substances 0.000 claims abstract description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 229910007948 ZrB2 Inorganic materials 0.000 abstract description 5
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
窒化アルミニウム配線基板の製造方法に関し、低抵抗な
導体線路を備えた配線基板を製造することを目的とし、
硼化ジルコニウム粉末に、この粉末に含有する酸素と結
合してアルミン酸カルシウムを形成するに必要な量のア
ルミニウム粉末と酸化カルシウム粉末とを加え、この粉
末に有機バインダと有機溶剤とを添加し混練して導体ペ
ーストを作り、この導体ペーストを窒化アルミニウムか
らなるグリンシートに印刷して配線パターンを形成した
後、このグリンシートをアルミン酸カルシウムの分解温
度以上にまで加熱して基板焼成を行い、硼化ジルコニウ
ムよりなる導体線路を形成することにより窒化アルミニ
ウム配線基板の製造方法を構成する。[Detailed Description of the Invention] [Summary] Regarding a method for manufacturing an aluminum nitride wiring board, the purpose is to manufacture a wiring board equipped with a low-resistance conductor line. Add the necessary amounts of aluminum powder and calcium oxide powder to combine to form calcium aluminate, add an organic binder and an organic solvent to this powder, knead to make a conductor paste, and add this conductor paste to aluminum nitride. After printing on a green sheet made of zirconium boride to form a wiring pattern, the green sheet is heated to a temperature higher than the decomposition temperature of calcium aluminate to sinter the substrate to form a conductor line made of zirconium boride. A method for manufacturing a wiring board is configured.
本発明は窒化アルミニウム配線基板の製造方法に関する
。The present invention relates to a method of manufacturing an aluminum nitride wiring board.
大量の情報を高速に処理する必要から情報処理装置は小
形大容量化が進められており、この装置の主体を占める
半導体集積回路素子は集積化が行われている。BACKGROUND OF THE INVENTION Due to the need to process large amounts of information at high speed, information processing devices are becoming smaller and larger in capacity, and semiconductor integrated circuit elements, which form the main body of these devices, are becoming more integrated.
すなわち、半導体集積回路素子は単位素子の小形化によ
り集積度が向上しており、ＬＳＩやＶＬＳＩが実用化さ
れている。That is, the degree of integration of semiconductor integrated circuit elements has been improved by miniaturization of unit elements, and LSI and VLSI have been put into practical use.
また、パッシベーション技術の進歩により実装方法も改
良され、従来のハーメチックシールパッケージ構造の半
導体素子に代わってフリンプチップタイプの半導体素子
が使用され、セラミック多層配線基板上にマトリックス
状に密に配列して使用するようになった。In addition, advances in passivation technology have led to improvements in packaging methods, and instead of semiconductor devices with a conventional hermetically sealed package structure, flip-chip type semiconductor devices are used, which are densely arranged in a matrix on a ceramic multilayer wiring board. I started using it.
このように情報処理装置は高密度実装が行われているが
、これと同時に半導体素子からの発熱量も加速度的に増
加している。As described above, information processing devices are being packaged at high density, but at the same time, the amount of heat generated from semiconductor elements is increasing at an accelerating pace.
すなわち、当初はＩＣの１個あたりの発熱量が約３．５
Ｗと少なかったが、現在のＬＳＩ １個あたりの発熱
量は約１０Ｗに増加しており、これがマトリックス状に
多数個装着される場合は発熱量は膨大であり、発熱量は
今後更に増大する傾向にある。In other words, initially the calorific value per IC was approximately 3.5
The current heat generation per LSI has increased to approximately 10W, and when a large number of LSIs are installed in a matrix, the amount of heat generated is enormous, and the amount of heat generated is likely to increase further in the future. It is in.
次に、これらの半導体素子を装着する基板としては熱伝
導度が高く、耐熱性が優れた材料であるアルミナ（α−
Ａ ｌ ｇｏｓ）が使用されてきた。Next, the substrate on which these semiconductor elements are mounted is made of alumina (α-
A l gos) have been used.
然し、アルミナ基板の熱伝導度は優れていると云うもの
＼２０Ｗ／ｍＫ程度であり、上記の高密度実装用の配線
基板としては不充分である。However, although the thermal conductivity of the alumina substrate is said to be excellent, it is only about \20 W/mK, which is insufficient as a wiring board for the above-mentioned high-density packaging.
そこで、熱伝導度が３２０ Ｗ／＋ｓＫ（理論値）と大
きな窒化アルミニウム（ｌｔＮ）基板が着目されており
、この実用化が進められている。Therefore, aluminum nitride (ltN) substrates, which have a high thermal conductivity of 320 W/+sK (theoretical value), have attracted attention, and efforts are being made to put them into practical use.
ＡＩＮをアルミナ（以下略してＡｉ ｇｏｓ）に較べる
と熱的および電気的特性が優れている。When compared to alumina (hereinafter abbreviated as Ai gos), AIN has superior thermal and electrical properties.
すなわち、熱伝導度が一桁以上高く、また熱膨張係数が
Ｓｉの熱膨張係数である３、６ Ｘｌ０−’／ ｔに近
いことに特徴がある。That is, it is characterized by its thermal conductivity being one order of magnitude higher and its coefficient of thermal expansion close to 3.6 Xl0-'/t, which is the coefficient of thermal expansion of Si.
そのため、ＡＩＮセラミックスを用いた多層配線基板の
実用化が進められているが、ＡＩＮの分解温度は２４０
０℃と高いのでＡＪＮセラミックスの焼成温度は１８０
０℃以上、が必要である。Therefore, the practical use of multilayer wiring boards using AIN ceramics is progressing, but the decomposition temperature of AIN is 240°C.
The firing temperature of AJN ceramics is 180℃ because it is as high as 0℃.
A temperature of 0°C or higher is required.
第１表はＡＩＮとＡ ｌ ｔＯ，の特性を対比したもの
である。Table 1 compares the characteristics of AIN and Al tO.
第１表
以上のことから、多層配線基板の導体線路としては金（
Ａｕ融点１０６４℃）、ｆｌｌ（Ａｇ融点９６１．９℃
）８ｗ４（Ｃｕ融点１０８４．５℃）のような電導度の
優れた金属材料は使用することができない。From the above in Table 1, gold (
Au melting point 1064℃), fll (Ag melting point 961.9℃
) 8w4 (Cu melting point: 1084.5° C.), which has excellent electrical conductivity, cannot be used.
そこで、タングステン（Ｗ）やモリブデン（ＭＯ）のよ
うな高融点金属が注目され、これらの金属の粉末を主成
分とする導体ペーストを作り、このペーストをＡＩＮか
らなるグリンシートにスクリーン印刷して配線パターン
を作り、乾燥した後に位置合わせを行って積層し、これ
を焼成することによって多層回路基板が作られている。Therefore, high-melting point metals such as tungsten (W) and molybdenum (MO) have attracted attention, and conductor pastes containing powders of these metals as main ingredients are made, and this paste is screen printed on green sheets made of AIN for wiring. A multilayer circuit board is made by creating a pattern, drying it, aligning it, stacking it, and firing it.
然し、Ｗの抵抗率は５．６４ｘｌＯ−’ΩｃＩｍまたＭ
ｏの抵抗率は４．９ Ｘｌ０−’ΩｃｏｗとＡｕ（２，
２Ｘ１０−’Ωｃｍ）、Ａｇ（１゜６２ Ｘｌ０−ｈΩ
ｃｍ）、Ｃｕ（１，７２Ｘｌ０−’Ωｃｍ）などに較べ
ると大きく、電気信号の高速処理に向かないことが問題
である。However, the resistivity of W is 5.64xlO-'ΩcIm and M
The resistivity of o is 4.9 Xl0-'Ωcow and Au(2,
2X10-'Ωcm), Ag (1゜62 Xl0-hΩ
The problem is that it is large compared to Cu (1,72Xl0-'Ωcm), etc., and is not suitable for high-speed processing of electrical signals.
そこで発明者等は抵抗率が低く、融点の高い材料を選定
した耀果、硼化ジルコニウム（ＺｒＢｚ）を見出した。Therefore, the inventors selected a material with low resistivity and high melting point, and found zirconium boride (ZrBz).
そして、この粉末を主成分とする導体ペーストを作り、
ＡＩＮグリンシートに印刷し、焼成することによって多
層配線基板を形成した。Then, a conductive paste containing this powder as the main ingredient is made,
A multilayer wiring board was formed by printing on an AIN green sheet and firing.
こ−で、ＺｒＢｇの抵抗率は２〜３Ｘ１０−’Ωｃｍと
低く、また融点は３０４０℃と高く、ＡＩＮを使用する
多層回路基板の形成に適している。ZrBg has a low resistivity of 2 to 3 x 10-' Ωcm and a high melting point of 3040°C, making it suitable for forming multilayer circuit boards using AIN.
然し、ＺｒＢ、はバルクとしての抵抗率は低いもの＼、
酸素（０）の吸収が起こり易（、この吸収は粉末を粉砕
するに従って増加し、微粉砕した状態では抵抗率はバル
クの値に較べて一桁程度にまで増加することが判った。However, ZrB has low resistivity as a bulk.
Oxygen (0) absorption easily occurs (this absorption increases as the powder is pulverized, and it was found that in the finely pulverized state, the resistivity increases by about one order of magnitude compared to the bulk value).
そのため、ＺｒＢ２をへＩ！Ｎ！Ｉｌ！線基板の導体
線路として使用するにはＯを含まない状態で導体線路を
形成することが必要である。Therefore, I changed ZrB2 to I! N! Il! In order to use it as a conductor line for a line board, it is necessary to form the conductor line in a state that does not contain O.
以上記したようにＺｒＢ１は融点が高く、またＡｕに近
い抵抗率を示すなど優れた特性を示す材料であり、ＡＩ
Ｎ多層配線基板の配線材料として適している。As mentioned above, ZrB1 is a material that exhibits excellent properties such as a high melting point and a resistivity close to that of Au.
Suitable as a wiring material for N multilayer wiring boards.
然し、そのためにはＺｒＢ、よりなる導体線路が０が含
まないで構成されていることが必要であり、○を含まな
い導体線路の形成法を開発することが課題である。However, for this purpose, it is necessary that the conductor line made of ZrB does not include 0, and the challenge is to develop a method for forming a conductor line that does not include ○.
上記の課題はＺｒＢ、からなる粉末に、この粉末に含有
する０と結合してアルミン酸カルシウムを形成するに必
要な量のＡＪ粉末と酸化カルシウム粉末とを加え、この
粉末に有機バインダと有機溶剤とを添加し混練して導体
ペーストを作り、この導体ペーストをＡＩＩＮからなる
グリンシートに印刷して配線パターンを形成した後、こ
のグリンシートをアルミン酸カルシウムの分解温度以上
にまで加熱して基板焼成を行い、導体線路を形成してＡ
ＪＮ配線基板を作ることにより解決することができる。The above problem involves adding AJ powder and calcium oxide powder in the amount necessary to combine with ZrB contained in this powder to form calcium aluminate, and adding an organic binder and an organic solvent to this powder. A conductor paste is made by adding and kneading the conductor paste, and after printing this conductor paste on a green sheet made of AIIN to form a wiring pattern, this green sheet is heated to a temperature higher than the decomposition temperature of calcium aluminate to bake the board. , form a conductor line, and
This problem can be solved by making a JN wiring board.
本発明はＺｒＢｔ粉末中に含まれるＯを除く方法として
、ＺｒＢｚ粉末にＡ１と酸化カルシウム（Ｃａｂ）を加
え、０を蒸気圧の高いアルミン酸カルシウム（ＣａＯ・
２Ａ １２ ｇｏｓ）として除くものである。As a method for removing O contained in ZrBt powder, the present invention adds A1 and calcium oxide (Cab) to ZrBz powder, and replaces 0 with calcium aluminate (CaO.
2A 12 gos).
すなわち、ＺｒＢ、は硬度が２２５２Ｋｇ／ ｍ”とタ
ングステン・カーバイド（ＷＣ）よりも硬（容易に粉砕
できない材料であるが、通常の粉末状態でも１〜２％の
０が含有されている。That is, ZrB has a hardness of 2252 Kg/m'', which is harder than tungsten carbide (WC) (it is a material that cannot be easily crushed), but even in its normal powder state it contains 1 to 2% zero.
このＺｒＢ、粉末を導体ペーストの材料とするためにボ
ールミルなどを用いて粉砕すると、表面が活性化するた
めに更に０の含有量が増加し、最大４％程度まで増加す
ることが判った。It has been found that when this ZrB powder is pulverized using a ball mill or the like to use as a material for a conductive paste, the surface is activated and the content of 0 further increases, up to a maximum of about 4%.
一方、先に記したようにＺｒＢｚの抵抗率は０の含有量
が増すに従って増加する。On the other hand, as described above, the resistivity of ZrBz increases as the zero content increases.
そこで、本発明は導体ペーストの形成に当たって先ずＺ
ｒＢ、粉末の中に含まれている０の含有量を分析し、こ
のＯと結合してＣａｂ、・２Ａ １ ｚＯ，を形成する
に必要なＡｌ粉末とＣａＯ粉末を添加するものである。Therefore, in the present invention, when forming a conductive paste, first
rB, the content of 0 contained in the powder is analyzed, and Al powder and CaO powder necessary to combine with this O to form Cab, .2A 1 zO, are added.
すなわち、Ａ１粉末の添加量はＣａＯ１・２Ａ １ ｔ
Ｏｚの分子式から含有する。ｌとモル比で２：３の関係
があり、またＣａＯ粉末の添加量はＡｉ’粉末に対し、
モル比で１＝４の関係がある。That is, the amount of A1 powder added is CaO1.2A 1 t
Contains from the molecular formula of Oz. There is a molar ratio of 2:3 with 1, and the amount of CaO powder added to Ai' powder is 2:3.
There is a relationship of 1=4 in molar ratio.
第２表
第２表は上記の分子式から０含有量に対するＡｌ粉末と
ＣａＯ粉末の添加量を計算により求めたものである。Table 2 Table 2 shows the amounts of Al powder and CaO powder added to the zero content calculated from the above molecular formula.
次に、蒸気圧の高いＣａＯ・２Ａ ｌ ｔｏｘの形成方
法を説明すると次のようになる。Next, the method for forming CaO.2Al tox with high vapor pressure will be explained as follows.
先ず、Ｚｒ８ｇ粉末を分析して０含有量を調べ、第２表
の関係からこの０に見合うＡＪとＣａＯの添加量を求め
る。First, 8g of Zr powder is analyzed to find out the zero content, and from the relationship shown in Table 2, the amount of AJ and CaO added that corresponds to this zero is determined.
次に、ＺｒＢ、粉末にＡｌとＣａＯとを混合して不活性
雰囲気中で加熱を行うと、６６０℃のＡｎの融点に達す
る共に溶融したＡｌはＺｒＢ、粉末中に含まれている０
と反応してＡ １．０．が形成される。Next, when ZrB and powder are mixed with Al and CaO and heated in an inert atmosphere, the melting point of An is reached at 660°C.The melted Al is mixed with ZrB and 0 contained in the powder.
Reacts with A 1.0. is formed.
次に、更に昇温しで１４００℃になると、この＾１２０
３はＣａＯと反応して液相のＣａＯ・２Ａ ｊ！ ｚｏ
＋ができるが、この化合物は蒸気圧が高いために、更に
この温度以上にまで加熱されると蒸発して飛散してしま
う。Next, when the temperature is further increased to 1400℃, this ^120
3 reacts with CaO to form liquid phase CaO・2A j! zo
However, since this compound has a high vapor pressure, if it is further heated above this temperature, it will evaporate and scatter.
そこで、本発明はＡｆＮの焼成温度が約１８００℃であ
ることから、ＺｒＢ、導体ペーストをＡｌ１Ｎグリンシ
ートにスクリーン印刷して配線パターンを形成した後、
このグリンシートを１８００℃にまで昇温してＡＩＮセ
ラミックスを焼成する過程でＺｒＢｔに含まれる０をＣ
ａ０ ・２Ａ ｌ ｔ’ｓに変え、これを蒸発飛散さ
せることにより０の含有量が少ないＺｒＢｇよりなる導
体線路を備えたＡｊ２Ｎ基板を得るものである。Therefore, in the present invention, since the firing temperature of AfN is about 1800°C, after forming a wiring pattern by screen printing ZrB and conductor paste on an Al1N green sheet,
In the process of heating this green sheet to 1800℃ and firing AIN ceramics, the 0 contained in ZrBt is converted to C.
By changing it to a0 .2Al t's and evaporating and scattering it, an Aj2N substrate having a conductor line made of ZrBg with a low content of 0 is obtained.
実施例：
平均粒径が１．０μ−で０含有量が２ｗｔ％のＺｒＢｚ
粉末２００ｇに対し、第２表の関係から、粒径が４μｍ
のＡｆ粉末を４．５ｇと粒径３μ−のＣａＯ粉末を２．
３４ ｇを添加した。Example: ZrBz with an average particle size of 1.0 μ- and a zero content of 2 wt%
For 200g of powder, from the relationship in Table 2, the particle size is 4μm.
4.5g of Af powder and 2.5g of CaO powder with a particle size of 3μ.
34 g was added.
これに有機バインダとしてポリビニルブチラール（略称
ＰＶＢ）と有機溶剤としてテレピネオールを添加して混
合し、播解器と三本ロールミルにより混練して粘度が１
０００ボイズ（Ｐｓ）の導体ペーストを作った・
この導体ペーストを厚さが２５０μ−のＡＩＮグリンシ
ートにスクリーン印刷して厚さが３０μ請の配線パター
ンを形成した。Polyvinyl butyral (abbreviated as PVB) as an organic binder and terpineol as an organic solvent are added and mixed, and the mixture is kneaded using a dispersing machine and a three-roll mill until the viscosity is 1.
A conductive paste of 000 voids (Ps) was made. This conductive paste was screen printed on an AIN green sheet with a thickness of 250 μm to form a wiring pattern with a thickness of 30 μm.
このグリンシートを７０℃に乾燥した後、５０℃の温度
条件で積層し、１０層からなる積層体を形成した。After drying this green sheet to 70°C, it was laminated at a temperature of 50°C to form a laminate consisting of 10 layers.
この積層体はＮ２雰囲気中で６００℃に加熱してバイン
ダを蒸発させた後、Ｎ２雰囲気中で１８００℃まで徐々
に昇温した後、この温度で５時間に亙って焼成した。This laminate was heated to 600°C in a N2 atmosphere to evaporate the binder, then gradually heated to 1800°C in a N2 atmosphere, and then fired at this temperature for 5 hours.
そして、焼成の終わった多層配線基板について内部配線
の面積抵抗を測定し、またペーストを単独で焼成した試
料を用いて０含有量を測定した。Then, the sheet resistance of the internal wiring was measured for the fired multilayer wiring board, and the 0 content was measured using a sample in which the paste was fired alone.
比較例：
実施例と同量のＺｒＢｚを用い、Ａｌ粉末とＣａＯ粉末
を添加しない以外は実施例と同様にしてＰＶＢとテレピ
ネオールを添加して混合し、粘度が１００ＯＰｓの導体
ペーストを形成した。Comparative Example: Using the same amount of ZrBz as in the example, PVB and terpineol were added and mixed in the same manner as in the example except that Al powder and CaO powder were not added to form a conductive paste with a viscosity of 100 OPs.
そして、実施例と同様にしてＡＪＮグリンシートにスク
リーン印刷して厚さが３０μ彌の配線パターンを作った
。Then, in the same manner as in the example, a wiring pattern having a thickness of 30 μm was made by screen printing on an AJN green sheet.
そして、実施例と同様にして１０層からなる多層配線基
板を形成し、この面積抵抗とペーストのみを焼成した試
料について０含有量を測定した。Then, a multilayer wiring board consisting of 10 layers was formed in the same manner as in the example, and the sheet resistance and the zero content were measured for a sample in which only the paste was fired.
第３表はこの測定結果である。Table 3 shows the results of this measurement.
第３表
この表から含有Ｏが殆ど除去でき、低抵抗な導体線路が
形成できることが判る。Table 3 From this table, it can be seen that most of the O contained can be removed and a conductor line with low resistance can be formed.
本発明の実施によりＺｒＢ、粉末から含有Ｏを除去する
ことができ、これにより抵抗率の小さなＺｒＢｚを導体
線路とするＡＪＮ多層配線基板を作ることができる。By carrying out the present invention, it is possible to remove the contained O from ZrB and powder, thereby making it possible to produce an AJN multilayer wiring board using ZrBz with low resistivity as conductor lines.
Claims (1)
してアルミン酸カルシウムを形成するに必要な量のアル
ミニウム粉末と酸化カルシウム粉末とを加え、該粉末に
有機バインダと有機溶剤とを添加し混練して導体ペース
トを作り、該導体ペーストを窒化アルミニウムからなる
グリンシートに印刷して配線パターンを形成した後、該
グリンシートをアルミン酸カルシウムの分解温度以上に
まで加熱して基板焼成を行い、硼化ジルコニウムよりな
る導体線路を形成することを特徴とする窒化アルミニウ
ム配線基板の製造方法。Add aluminum powder and calcium oxide powder in amounts necessary to combine with oxygen contained in the powder to form calcium aluminate to zirconium boride powder, add an organic binder and an organic solvent to the powder, and knead. After printing the conductive paste on a green sheet made of aluminum nitride to form a wiring pattern, the green sheet is heated to a temperature higher than the decomposition temperature of calcium aluminate to bake the board. A method for producing an aluminum nitride wiring board, comprising forming conductor lines made of zirconium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18208388A JPH0231496A (en) | 1988-07-21 | 1988-07-21 | Manufacture of aluminum nitride wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18208388A JPH0231496A (en) | 1988-07-21 | 1988-07-21 | Manufacture of aluminum nitride wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0231496A true JPH0231496A (en) | 1990-02-01 |
Family
ID=16112061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18208388A Pending JPH0231496A (en) | 1988-07-21 | 1988-07-21 | Manufacture of aluminum nitride wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231496A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5149829A (en) * | 1991-01-14 | 1992-09-22 | Hoffmann-La Roche Inc. | Method of preparing dry, concentrated salts of ascorbate 2-polyphosphate |
| EP0764618A3 (en) * | 1995-08-16 | 1997-06-04 | Du Pont | Thick film conductor paste compositions for aluminum nitride substrates |
-
1988
- 1988-07-21 JP JP18208388A patent/JPH0231496A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5149829A (en) * | 1991-01-14 | 1992-09-22 | Hoffmann-La Roche Inc. | Method of preparing dry, concentrated salts of ascorbate 2-polyphosphate |
| EP0764618A3 (en) * | 1995-08-16 | 1997-06-04 | Du Pont | Thick film conductor paste compositions for aluminum nitride substrates |
| US6103146A (en) * | 1995-08-16 | 2000-08-15 | E. I. Du Pont De Nemours And Company | Thick film conductor paste compositions for aluminum nitride substrates |
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