JPH0231457A - Light emitting element drive semiconductor device - Google Patents
Light emitting element drive semiconductor deviceInfo
- Publication number
- JPH0231457A JPH0231457A JP63182301A JP18230188A JPH0231457A JP H0231457 A JPH0231457 A JP H0231457A JP 63182301 A JP63182301 A JP 63182301A JP 18230188 A JP18230188 A JP 18230188A JP H0231457 A JPH0231457 A JP H0231457A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- resistor
- semiconductor device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000013016 damping Methods 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、発光素子を駆動するための半導体装置、特に
その発光素子に接続される出力部に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device for driving a light emitting element, and particularly to an output section connected to the light emitting element.
従来の技術
第４図に従来の発光素子を駆動する装置の模式図を示す
。１は半導体チップ、２は発光素子駆動用のトランジス
タのコレクタに接続するコレクタ電標、５は発光素子、
１１は抵抗、１２は抵抗体、１３．１４は抵抗体１２の
両端の電極、６１．６２はボンディングワイヤである。BACKGROUND ART FIG. 4 shows a schematic diagram of a conventional device for driving a light emitting element. 1 is a semiconductor chip, 2 is a collector electrode connected to the collector of a transistor for driving a light emitting element, 5 is a light emitting element,
11 is a resistor, 12 is a resistor, 13.14 is an electrode at both ends of the resistor 12, and 61.62 is a bonding wire.
従来、発光素子を駆動する場合、発光素子自身及び実装
に伴うリアクタンスによる波形への影響を抑えるため駆
動素子と発光素子の間にダンピング用抵抗を直列に挿入
することが行われる。（参考文献：内海邦昭他、′光送
信器用ＧａＡＳＩ Ｇ’信学技報、ＲＤ８６−１５１．
１９８？）第４図においては抵抗１１が発光素子６を駆
動する際に必要なダンピング用抵抗であり、コレクタ電
極２と抵抗１１の電極１３をボンディングワイヤ６１で
、抵抗１１の電極１４と発光素子６をボンディングワイ
ヤ６２で接続している。Conventionally, when driving a light emitting element, a damping resistor is inserted in series between the driving element and the light emitting element in order to suppress the influence on the waveform due to the reactance of the light emitting element itself and mounting. (Reference: Kuniaki Utsumi et al., 'GaASI G for optical transmitters' IEICE Technical Report, RD86-151.
198? ) In FIG. 4, the resistor 11 is a damping resistor necessary when driving the light emitting element 6, and the collector electrode 2 and the electrode 13 of the resistor 11 are connected with a bonding wire 61, and the electrode 14 of the resistor 11 and the light emitting element 6 are connected with a bonding wire 61. They are connected by bonding wires 62.
発明が解決しようとする課題
しかしながら上記のような構成では、発光素子５と半導
体チップ１０間に抵抗１１を実装しており、２カ所のワ
イヤボンディングが必要となる。Problems to be Solved by the Invention However, in the above configuration, the resistor 11 is mounted between the light emitting element 5 and the semiconductor chip 10, and wire bonding is required at two locations.
したがって、ボンディングワイヤ６１．６２及び抵抗１
１の電極１３．１４等によるリアクタンスが増加し、そ
れだけダンピング用の抵抗１１の抵抗値を大きくする必
要があり、駆動用半導体装置にとって負荷が重くなり、
十分な電流が流せないという欠点があった。Therefore, the bonding wires 61, 62 and the resistor 1
1, the reactance due to the electrodes 13, 14, etc. increases, and it is necessary to increase the resistance value of the damping resistor 11 accordingly, which increases the load on the driving semiconductor device.
The drawback was that it did not allow enough current to flow through it.
本発明はかかる点に鑑みなされたもので、個別のダンピ
ング用抵抗素子を必要としない発光素子駆動用半導体装
置を提供することを目的とする０課題を解決するための
手段
発光素子駆動用のトランジスタのコレクタ（ＦＩＴの場
合はドレイン）と発光素子の間に入れるダンピンク用抵
抗を回路と同一の半導体チップ上に作成し、前記コレク
タに直列に接続して出力端子とする発光素子駆動用半導
体装置である。The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor device for driving a light emitting element that does not require a separate damping resistance element.Means for Solving the Problems Transistor for driving a light emitting element A semiconductor device for driving a light emitting element, in which a damping resistor inserted between the collector (drain in the case of FIT) and the light emitting element is created on the same semiconductor chip as the circuit, and connected in series to the collector as an output terminal. be.
作用
本発明は前記した構成により、ダンピング用抵抗を発光
素子駆動用半導体装置に内蔵しているため、それだけり
アクタンスが減少し、発光素子をより良好に駆動するこ
とができる。Operation According to the present invention, the damping resistor is built into the semiconductor device for driving the light emitting element, so that the actance is reduced accordingly, and the light emitting element can be driven better.
実施例
第１図は本発明の第１の実施例における発光素子付近を
示す模式図である。第１図において、１は発光素子駆動
用半導体装置が作成されている半導体チップ、２は発光
素子駆動用トランジスタのコレクタに接続するコレクタ
電極、３はダンピング用抵抗、４は出力用電極、６は発
光素子、６はボンディングワイヤである。Embodiment FIG. 1 is a schematic diagram showing the vicinity of a light emitting element in a first embodiment of the present invention. In FIG. 1, 1 is a semiconductor chip on which a semiconductor device for driving a light emitting element is made, 2 is a collector electrode connected to the collector of a transistor for driving a light emitting element, 3 is a damping resistor, 4 is an output electrode, and 6 is an output electrode. The light emitting element and 6 are bonding wires.
以上のように構成された本実施例において、ダンピング
用抵抗３は、発光素子駆動用半導体装置が作成されてい
る半導体チップ１上に作成されており、ダンピング用抵
抗３の一端はコレクタ電極２に直接接続されている。ダ
ンピング用抵抗３の他端には出力用電極４が設けられ、
ワイヤボンディング用のパッドの機能を果している。発
光素子６と出力用電極４はボンディングワイヤ６で接続
されており、発光素子５とコレクタ電極２の間にはワイ
ヤボンディングは１カ所である。In this embodiment configured as described above, the damping resistor 3 is fabricated on the semiconductor chip 1 on which the semiconductor device for driving the light emitting element is fabricated, and one end of the damping resistor 3 is connected to the collector electrode 2. Directly connected. An output electrode 4 is provided at the other end of the damping resistor 3,
It functions as a pad for wire bonding. The light emitting element 6 and the output electrode 4 are connected by a bonding wire 6, and there is one wire bonding between the light emitting element 5 and the collector electrode 2.
第２図は本発明の第２の実施例における発光素子付近を
示す模式図であり、３１はコレクタ電極２に接続する第
１の抵抗、４１は第１の抵抗３１の一端に接続する第１
の電極、３２は第１の電極４１に接続する第２の抵抗、
４２は第２の抵抗３２の一端に接続する第２の電極、そ
の他番号が共通のものは第１図と同じものである。FIG. 2 is a schematic diagram showing the vicinity of a light emitting element in a second embodiment of the present invention, where 31 is a first resistor connected to the collector electrode 2, and 41 is a first resistor connected to one end of the first resistor 31.
32 is a second resistor connected to the first electrode 41,
Reference numeral 42 denotes a second electrode connected to one end of the second resistor 32, and other parts with common numbers are the same as in FIG.
以上のように構成された本実施例において、コレクタ電
極２には第１の抵抗３１と第２の抵抗３２が直列に接続
されており、発光素子６と第１の電極４１または第２の
電極４２とをワイヤボンディングで接続することにより
、ダンピング用抵抗として２通りの抵抗値が選択できる
。本実施例では第１の電極４１と発光素子６がワイヤボ
ンディングされている図を示している。また、コレクタ
電極２と発光素子６をワイヤボンディングすれば、ダン
ピング用抵抗を省いた接続も可能である。In this embodiment configured as described above, the first resistor 31 and the second resistor 32 are connected in series to the collector electrode 2, and the light emitting element 6 and the first electrode 41 or the second electrode are connected in series. 42 by wire bonding, two resistance values can be selected as the damping resistor. In this embodiment, a diagram is shown in which the first electrode 41 and the light emitting element 6 are wire-bonded. Further, if the collector electrode 2 and the light emitting element 6 are wire-bonded, a connection without a damping resistor is also possible.
ダンピング用抵抗の抵抗値はダンピング効果がある範囲
でできるだけ小さいことが望ましく、また発生するりア
クタンスは素子の製造上のばらつきや実装方法に大きく
依存するため、実装時に実際に発生したりアクタンスに
応じてできるだけ小さな抵抗値のダンピング抵抗を選択
できることが望まれる。本実施例ではボンディングワイ
ヤの接続位置を選択することにより、最適なダンピング
用抵抗を選択することが可能である。It is desirable that the resistance value of the damping resistor be as small as possible within the range that provides the damping effect.Also, since the generated actance greatly depends on the manufacturing variations of the element and the mounting method, the resistance value of the damping resistor should be It is desirable to be able to select a damping resistor with a resistance value as small as possible. In this embodiment, it is possible to select the optimum damping resistor by selecting the connection position of the bonding wire.
本実施例では抵抗を２つとしたが、より多くの抵抗を設
けて、抵抗値をより細かく選択できるようにすることも
可能である。In this embodiment, two resistors are used, but it is also possible to provide more resistors so that the resistance value can be selected more precisely.
第３図は本発明の第３の実施例における発光素子付近を
示す模式図であり、３３．３４．３５はそれぞれコレク
タ電極に接続する第３の抵抗、第４の抵抗、第６の抵抗
、４３．４４．４５はそれぞれ第３の抵抗３３．第４の
抵抗３４．第５の抵抗３６の一端に接続する第３の電極
、第４の電極、第６の電極で、その他番号が共通のもの
は第１図と同じものである。FIG. 3 is a schematic diagram showing the vicinity of a light emitting element in the third embodiment of the present invention, and 33, 34, and 35 are a third resistor, a fourth resistor, a sixth resistor, respectively connected to the collector electrode. 43, 44, and 45 are the third resistors 33. and 45, respectively. Fourth resistor 34. Among the third electrode, fourth electrode, and sixth electrode connected to one end of the fifth resistor 36, the other electrodes having the same numbers are the same as those in FIG. 1.
以上のように構成された本実施例において、コレクタ電
極２には第３の抵抗３３．第４の抵抗３４、第５の抵抗
３５が接続されており、抵抗値はすべて異なっている。In this embodiment configured as described above, the collector electrode 2 is provided with a third resistor 33. A fourth resistor 34 and a fifth resistor 35 are connected, and have different resistance values.
したがって、発光素子６を第３の電極４３．第４の電極
４４．第６の電極４６のいずれにワイヤボンディングで
接続するかにより、ダンピング用抵抗として３通りの抵
抗値が選択できる。本実施例では第６の電極４６と発光
素子５がワイヤポンディングされている図を示している
。Therefore, the light emitting element 6 is connected to the third electrode 43. Fourth electrode 44. Depending on which of the sixth electrodes 46 it is connected to by wire bonding, three resistance values can be selected as the damping resistor. In this embodiment, the sixth electrode 46 and the light emitting element 5 are wire bonded.
本実施例においても第２の実施例と同様にボンディング
ワイヤの接続位置を選択することにより、最適なダンピ
ング用抵抗を選択することが可能である。また、本実施
例では抵抗がすべて並列に接続されているため、いずれ
の抵抗を選択しても、リアクタンスの増減は小さい。In this embodiment as well, it is possible to select the optimum damping resistor by selecting the connection position of the bonding wire as in the second embodiment. Furthermore, in this embodiment, all the resistors are connected in parallel, so no matter which resistor is selected, the increase or decrease in reactance is small.
本実施例では抵抗を３つとしたが、より多くの抵抗を設
けて、抵抗値をより細かく選択できるようにすることも
可能である。Although three resistors are used in this embodiment, it is also possible to provide more resistors so that the resistance value can be selected more precisely.
発明の詳細
な説明したように、本発明によれば、ダンピング用抵抗
を発光素子駆動用半導体装置に内蔵することによりリア
クタンスの増加を最小限にでき、それだけダンピング用
抵抗の抵抗値を小さくすることができ、その実用的効果
は大きい。As described in detail, according to the present invention, an increase in reactance can be minimized by incorporating a damping resistor into a semiconductor device for driving a light emitting element, and the resistance value of the damping resistor can be reduced accordingly. can be done, and its practical effects are great.
第１図は本発明の第１実施例における発光素子駆動用半
導体装置の要部斜視図、第２図は同第２の実施例装置の
要部斜視図、第３図は同第３の実施例装置の要部斜視図
、第４図は従来の装置の要部斜視図である。
１・・・・・・半導体チップ、２・・・・・・コレクタ
電極、３・・・・・・ダンピング用抵抗、４・・・・・
・出力用電極、６・・・・・・発光素子、６・・・・・
・ボンディングワイヤ、３１〜３５・・川・第１〜第６
の抵抗、４１〜４６・川・・第１〜第６の電極、１１・
・・・・・抵抗、１２・・・・・・抵抗体、１３．１４
・・・・・・［極％８１ｔ６２・・・・・・ボンディン
グワイヤ。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第
！
図
３− ダンピング用おｌ光
４−エカＰＦ５を極
Ｊ３− 第３の抵抗
３４− 第４の＆祝
３５− 第５の拒ｌ充
火・−第３の電」五
科−第４の電１ｉ
央−第５の電極
発光索子
りFIG. 1 is a perspective view of a main part of a semiconductor device for driving a light emitting element according to a first embodiment of the present invention, FIG. 2 is a perspective view of a main part of a device of a second embodiment of the invention, and FIG. FIG. 4 is a perspective view of a main part of an example device. FIG. 4 is a perspective view of a main part of a conventional device. 1... Semiconductor chip, 2... Collector electrode, 3... Damping resistor, 4...
・Output electrode, 6... Light emitting element, 6...
・Bonding wire, 31-35... River 1st-6th
Resistance, 41 to 46. River... 1st to 6th electrode, 11.
...Resistance, 12 ...Resistor, 13.14
......[Extreme%81t62...Bonding wire. Name of agent: Patent attorney Shigetaka Awano and 1 other person! Figure 3 - Damping light 4 - Eka PF5 to pole J3 - 3rd resistor 34 - 4th & congratulation 35 - 5th rejection - 3rd electricity - 4th electricity 1i Center - 5th electrode light emitting cable
Claims (3)
）に、このトランジスタと同一半導体チップ上に作成し
た抵抗を直列に介して出力端子とすることを特徴とする
発光素子駆動用半導体装置。(1) A semiconductor device for driving a light emitting element, characterized in that the collector (or drain) of an output transistor is connected in series with a resistor fabricated on the same semiconductor chip as the transistor to serve as an output terminal.
）に、このトランジスタと同一半導体チップ上に作成し
た複数の抵抗を直列に介し、これら抵抗の両端にパッド
を設け、これらのうちのいずれかを出力端子とすること
を特徴とする発光素子駆動用半導体装置。(2) Connect the collector (or drain) of the output transistor in series with multiple resistors fabricated on the same semiconductor chip as this transistor, provide pads on both ends of these resistors, and connect one of them to the output terminal. A semiconductor device for driving a light emitting element, characterized in that:
）に、このトランジスタと同一半導体チップ上に作成し
た複数の抵抗をそれぞれ接続し、これら抵抗のうちいず
れか一つを介して出力端子とすることを特徴とする発光
素子駆動用半導体装置。(3) A plurality of resistors fabricated on the same semiconductor chip as the transistor are connected to the collector (or drain) of the output transistor, and an output terminal is provided through one of these resistors. A semiconductor device for driving a light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63182301A JPH0231457A (en) | 1988-07-21 | 1988-07-21 | Light emitting element drive semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63182301A JPH0231457A (en) | 1988-07-21 | 1988-07-21 | Light emitting element drive semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0231457A true JPH0231457A (en) | 1990-02-01 |
Family
ID=16115895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63182301A Pending JPH0231457A (en) | 1988-07-21 | 1988-07-21 | Light emitting element drive semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231457A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0802572A2 (en) * | 1996-04-20 | 1997-10-22 | ABBPATENT GmbH | SMD light emitting diode |
| EP2012357A3 (en) * | 1998-12-09 | 2009-07-29 | Fuji Electric Company Limited | Method of manufacturing a semi conductor device |
| JP2013214615A (en) * | 2012-04-02 | 2013-10-17 | Citizen Holdings Co Ltd | Led module and led light source unit using the same |
-
1988
- 1988-07-21 JP JP63182301A patent/JPH0231457A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0802572A2 (en) * | 1996-04-20 | 1997-10-22 | ABBPATENT GmbH | SMD light emitting diode |
| EP0802572B1 (en) * | 1996-04-20 | 2006-04-05 | ABB PATENT GmbH | Operation mode indicator with a surface-mounted-device type light source |
| EP2012357A3 (en) * | 1998-12-09 | 2009-07-29 | Fuji Electric Company Limited | Method of manufacturing a semi conductor device |
| JP2013214615A (en) * | 2012-04-02 | 2013-10-17 | Citizen Holdings Co Ltd | Led module and led light source unit using the same |
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