JPH02312274A - Color solid-state image sensing device and manufacture thereof - Google Patents

Abstract

PURPOSE:To improve a color solid-state image sensing device of this design in durability, pattern accuracy, and yield and to dispense with the control of materials by a method wherein the color filter layer of a color filter is formed of color material composed of silicon oxide into which dyes are dissolved. CONSTITUTION:A photodetective part 12 and a transfer electrode 14 are formed on a semiconductor substrate 10, and a PSG film 16 is formed on the whole face of the transfer electrode 14. A flattening layer 18 of SiO2, for instance, is formed on the PSG film 16 for flattening, a first color filter layer 30 is deposited on the flattening layer 18, and a color separating layer 32 of SiO2, for instance, is provided onto the color filter layer 30. Moreover, a second color filter layer 34, a color separating layer 36, a third color filter layer 38, and a protective layer 39 all formed of color materials composed of silicon oxide material into which dyes are dissolved are successively deposited on the color separating layer 32. By this setup, a color solid-state image sensing device of this design can be improved in durability, pattern accuracy, and yield and the control of materials can be dispensed with.

Description

[Detailed Description of the Invention] [Summary] A color solid bed with a color filter formed on the light-receiving part is durable and scratch-resistant, has good pattern accuracy, and has a high yield.
The purpose of the present invention is to provide a color solid-state imaging device that does not require strict management of materials and a method for manufacturing the same.
In the image device, the color filter layer in the color filter is formed of a color material in which a dye is dissolved in a silicon oxide-based material.

In addition, in a method for manufacturing a color solid-state imaging device in which a color filter is formed on a light-receiving part formed on a substrate, a coloring material V4 layer in which a dye is dissolved in a silicon oxide material is formed on the entire surface of the light-receiving part on a substrate. A resist layer having a predetermined shape is formed on the color material layer, and the color material layer is etched using the resist layer as a mask to form a color filter layer having a predetermined shape.

U Field of Industrial Application] The present invention relates to a color solid-state imaging device in which a color filter is formed on a light-receiving portion, and a method for manufacturing the same.

[Prior Art] A color solid-state 111 (fli device) is manufactured by forming a color filter having color filter layers of three colors on a light-receiving portion of a black-and-white solid-state imaging device.

A method of manufacturing a conventional color solid-state imaging device will be described with reference to FIG.

In a black and white solid-state imaging device, a light receiving section 12 for converting received light into signal charges is formed on the surface of a semiconductor substrate 10, and a transfer section for transferring signal charges is formed between the light receiving sections 12 on the semiconductor substrate 10. An electrode section 14 is formed. Further, in order to protect the light receiving section 12 and the transfer electrode section 14, a transparent PS (4!16) is formed on the entire surface.

A color filter is formed on such a monochrome solid-state imaging device to manufacture a color solid-state imaging device.

First, add a mixture of gelatin and a sensitizing agent such as dichromic acid to P.
A gelatin layer 20 is formed by covering the SG film 1 with a layer 6, and the first
Light is irradiated onto the portion to be left as an optical filter layer (FIG. 3(a)).

Next, when gelatin NJ20 is developed, only the irradiated part remains, and the other parts are dissolved and removed (third
Figure (b)).

Next, the remaining gelatin layer 20 is dyed with a dye to a desired color to form the first color filter layer 20 (Fig. 3(C)).
).

Next, a colorless and transparent D uv layer is placed on the first color filter layer 20.
A color separation layer 22 which is a resist is formed.

Next, in order to form a second color filter layer, gelatin 71N 24 is formed on the color separation layer 22, and the portion to be left as the second optical filter layer is irradiated with light (see FIG. 3).
d)).

After the gelatin layer 24 is developed, it is dyed in a predetermined color to form the second color filter layer 24.

After forming the color layer 26 on the second color filter 124, the same process is repeated again to form the third color filter layer 2.
8 is formed, and then a protective layer 29 is formed on the entire surface (third step
Figure (e)).

As described above, in conventional color solid-state imaging devices, gelatin is dyed to form a color filter layer.

[Problems to be Solved by the Invention] However, gelatin has a problem in that it is weak in terms of water resistance and lacks durability. Furthermore, the patterning accuracy was not good to begin with, being about 2 μm, and there was a problem that the gelatin layer was deformed by dyeing and baking after formation. Further, there is a problem in that the color solid-state imaging device is contaminated by dust generated during the dyeing process and the yield is reduced. Furthermore, in order to keep the color tone of the color filter layer constant, it is necessary to keep the concentration of the dye constant, but there is also the problem that it is extremely difficult to control the dye in this way.

The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a color solid-state imaging device that is durable, has good pattern accuracy, has a high yield, and does not require strict material management, and a method for manufacturing the same. do.

[Means for Solving the Problems] The above object is to provide a color solid-state imaging device in which a color filter is formed on a light-receiving portion formed on a substrate, in which a color filter layer in the color filter impregnates a silicon oxide-based material with a dye. This is achieved by a color solid-state imaging device characterized in that it is formed of fused color materials.

The above object also provides a method for manufacturing a color solid-state imaging device in which a color filter is formed on a light-receiving part formed on a substrate, in which a color material layer formed by dissolving a dye in a silicon oxide material is formed on the entire surface of the light-receiving part on the substrate. A color solid-state imaging device characterized in that a resist layer having a predetermined shape is formed on the color material layer, and the color material layer is etched using the resist layer as a mask to form a color filter layer having a predetermined shape. This is achieved by a method of manufacturing the device.

[Function] According to the present invention, since the color filter layer is formed using a silicon oxide-based material in which a dye is dissolved, a color solid-state image device that is durable and has good pattern accuracy can be produced with high yield.
Jl construction is possible.

Embodiment A color solid-state imaging device according to an embodiment of the present invention is shown in FIG. 1, and a conventional color solid-state imaging device shown in FIG. The explanation will be omitted.

A light receiving section 12 and a transfer 1 on the semiconductor substrate 10! A pole part 14 is formed, and a PSG film 16 is formed on the entire surface of the transfer IT part 14.

A flattening layer 18 of, for example, 5jO2 is formed on the PSG film 1 6 for flattening, and a color filter is formed on this flattening layer 18.

A first color filter layer 30 is formed on the planarization layer 18, and on this first color filter layer 30, for example, SiO
A color separation layer 32 of t is formed.

Further, on the color separation layer 32, a second color filter Nj 34, a color separation M layer 36, a third color filter rfJ 38, and a protective layer 39 are provided.
are formed in sequence.

This embodiment is characterized in that the color filter layers 30, 34, and 38 are formed of a color material in which a dye is dissolved in a silicon oxide-based material. For example, a silicon oxide based material in which a red (R) dye is dissolved is used as the first color filter layer 30, a silicon oxide based material in which a green (G) dye is dissolved is used as the second color filter layer 34, As the color filter layer 38 of No. 3, a silicon oxide-based material in which a dye of blue CB> is dissolved is used. Further, the first color filter layer 30, the second color filter layer 34, and the third color filter layer 38 are cyan (Cy), yellow (Ye), and magenta (
A silicon oxide-based material in which a dye (Mg) is dissolved may also be used.

Next, the method for manufacturing the color solid-state imaging device of this example will be described in a second manner.
This will be explained using figures.

First, the light receiving section 12 and the transfer electrode section 14 are formed on the conductive substrate 10, and a transparent PSGM 16 is formed on the entire surface thereof (FIG. 2(a)).

Next, for planarization of the PSG film 1 and 6, for example, Si
A planarization layer 18 of O2 is formed (FIG. 2(b)).

Next, a first color filter layer 30 is formed on the planarization layer 18 using a color material in which a dye is dissolved in a silicon oxide-based material, and a UV resist is applied on the light receiving section 12 where the first color filter layer 30 is to be left. Figure 2 (C1).

Silicon oxide materials include silicon oxide and silicon oxide as main materials, and in this embodiment, for example, OCD (manufactured by Tokyo Ohka Chemical Co., Ltd.) and PuO2 (polyladder organo-siloxic acid) are used. A dye of a predetermined color is dissolved in this silicon oxide material in advance and prepared as a material for the color filter layer.

As the resist, tJV resist 31, which has a proven track record in forming IRm patterns, is used, and a highly accurate resist pattern can be formed.

Next, using this UV resist 31 as a mask, dry etching is performed using CF film, gas, etc. to form the first color filter layer 3.
0 (Fig. 2(d)).

Subsequently, a color separation layer 32 of, for example, 5 iOz is formed on the entire surface, and the process of FIG. Repeatedly, as shown in FIG.
A second color filter layer 34, a color separation layer 36, a third color filter NJ38.15i, and an interlayer 39 are formed in this order on top to complete a color solid-state imaging device.

As described above, according to this example, the color filter layer was formed using a silicon oxide material in which the dye was dissolved in advance, and the patterning was performed by dry etching using a proven UV resist. Accuracy can be significantly improved.

Additionally, silicon oxide materials are far superior to gelatin in terms of water resistance and can ensure sufficient durability.

Furthermore, since a dyeing process is not required, the color solid-state imaging device is not contaminated and can be manufactured at a high yield.

Furthermore, the hue of the color filter layer can be managed much more easily than conventional dye management.

Furthermore, in this example, since the PSG film, planarization layer, color filter layer, color separation layer, and protective layer formed on the light receiving section and the transfer electrode section were formed of the same silicon oxide material, internal damage due to temperature changes may occur. No stress or cracks will occur.

The present invention is not limited to the above-mentioned embodiments, and various modifications are possible.

For example, in the above embodiment, a color solid-state imaging device is used in which a color filter is formed on a monochrome solid-state imaging device using an on-chip method, but the present invention can also be applied to a color solid-state imaging device in which a color filter is formed using a bonding method. Applicable.

Moreover, acrylic resin may be used instead of 5102 as the color gf waste.

Furthermore, it goes without saying that any type of light receiving section and charge transfer section on which the color filter is formed may be used.

[Effects of the Invention] As described above, according to the present invention, it is possible to realize a color solid-state imaging device that is durable, has good pattern accuracy, has a high yield, and does not require strict management of materials.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a color solid-state imaging device according to an embodiment of the present invention, FIG. 2 is a process diagram of a method for manufacturing a color solid-state imaging device according to an embodiment of the present invention, and FIG. 3 is a conventional color solid-state imaging device. It is a process diagram of the manufacturing method of a device. In the figure, 10... Semiconductor substrate 12... Light receiving section 14... Transfer electrode section 16... PSGM 18... Flattening layer 20... First color filter layer 22... Color separation Layer 24... Second color filter waste 26... Color separation layer 28... Third color filter layer 29... Protective layer 30... First color filter layer 31... Photoresist 32...Color MN 34...Second color filter layer 36...Color separation layer 38...Third color filter layer 39...Protective layer/Patent attorney Igata Sada - 10-11 beef g
4 extension 11 anti 30--1 first color filter j2
--Receiving part, 32 = - color separation layer, - floor slab 1 Example 1 of early-onset sea bream; Cross-sectional view of yoko collar white stop 1 repair repair Figure 1. 1)

Claims (1)

[Claims] 1. In a color solid-state imaging device in which a color filter is formed on a light receiving part formed on a substrate, a color filter layer in the color filter is made of a color material in which a dye is dissolved in a silicon oxide-based material. A color solid-state imaging device characterized in that: 2. In a method for manufacturing a color solid-state imaging device in which a color filter is formed on a light-receiving part formed on a substrate, a color material layer in which a dye is dissolved in a silicon oxide-based material is formed on the entire surface of the light-receiving part on the substrate, A method for manufacturing a color solid-state imaging device, comprising: forming a resist layer with a predetermined shape on the color material layer, and etching the color material layer using the resist layer as a mask to form a color filter layer with a predetermined shape. .