JPH02310923A - Removal apparatus of organic film - Google Patents
Removal apparatus of organic filmInfo
- Publication number
- JPH02310923A JPH02310923A JP13392289A JP13392289A JPH02310923A JP H02310923 A JPH02310923 A JP H02310923A JP 13392289 A JP13392289 A JP 13392289A JP 13392289 A JP13392289 A JP 13392289A JP H02310923 A JPH02310923 A JP H02310923A
- Authority
- JP
- Japan
- Prior art keywords
- organic film
- semiconductor device
- solvent
- nozzle
- drying gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000002904 solvent Substances 0.000 claims abstract description 36
- 238000001035 drying Methods 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 11
- 239000002699 waste material Substances 0.000 abstract description 8
- 238000011084 recovery Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000002351 wastewater Substances 0.000 description 3
- 210000005036 nerve Anatomy 0.000 description 2
- 239000008213 purified water Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000013040 bath agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体デバイス上に表面保護のために形成さ
れた有機被膜を溶剤に工す溶解・除去するための有機被
膜除去装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an organic film removing apparatus for dissolving and removing an organic film formed on a semiconductor device for surface protection using a solvent.
従来の技術
従来、半導体デバイス上の有機被膜を除去する場合、有
機被膜をピンセットなどを用いてはがし取る。ことによ
って除去していた。すなわち、有機被膜の形成された半
導体デバイスを頭、微鏡で観察しながら、１つ１つ単体
で処理していた。2. Description of the Related Art Conventionally, when removing an organic film on a semiconductor device, the organic film is peeled off using tweezers or the like. It was removed by this. That is, the semiconductor devices on which the organic films were formed were individually processed one by one while being observed with a microscope.
発明が解決しようとする課題
上記従来のように有機被膜をピンセットではがし取る場
合は、ピンセットの先で半導体デバイスに傷をつけたり
、ま友有ｅ！被膜の形成され九半導体デバイス１つ１つ
について単体で魁坤を行なう友め、多大な時間と労力と
を必要としていた。Problems to be Solved by the Invention When peeling off an organic film using tweezers as in the conventional method described above, the tips of the tweezers may damage the semiconductor device or cause damage to the semiconductor device. It required a great deal of time and effort to perform the process individually for each semiconductor device on which a film was formed.
本発明はこのような課題を解決するもので、容易かつ正
確に有機被膜を除去することができ、しかも有機被膜に
傷をつけることもなく、作業能率の向上を図ることを目
的とするものである。The present invention is intended to solve these problems, and aims to improve work efficiency by making it possible to easily and accurately remove an organic film without damaging the organic film. be.
Ｓ題を解決するための手段
この課題を解決するために本発明は、半導体デバイスに
設けた有機ｆ＆膜に対し溶剤を吹きつけるノズルを備え
た有機破膜溶解ユニットと、この有機被膜溶解ユニット
によって有機被膜が溶解・除去され次半導体デバイスに
対し洗浄水を吹きつけるノズ１ｖを備えた水先ユニット
と、この水洗ユニットによって水先いされた半導体デバ
イスに対し乾燥用ガスｔｌ−１火きつける送風口を備え
た乾燥ユニットとからなるものである。Means for Solving Problem S In order to solve this problem, the present invention provides an organic film rupture dissolving unit equipped with a nozzle that sprays a solvent onto an organic f& film provided on a semiconductor device, and an organic film dissolving unit using this organic film dissolving unit. A pilot unit equipped with a nozzle 1V that sprays cleaning water onto the semiconductor device after the organic film is dissolved and removed, and an air outlet that ignites the drying gas TL-1 onto the semiconductor device piloted by the water cleaning unit. It consists of a drying unit.
作用
この構成により、従来のように顕微鏡で観察しながらビ
ンセットで１枚１枚有機被膜をはがし取る必要がなく、
神経を使うことなくきわめて容易にかつ正確に有機被膜
を除去することができるので６る。ま友、ピンセットで
はがし取るといった物理的な力は用いていないので、半
導体デバイスに傷をつけることもなく、従来に比べて作
業能率の向上を図ることができる。Function: With this configuration, there is no need to peel off the organic coating one by one using a bottle set while observing it with a microscope, as in the conventional method.
This is because the organic film can be removed very easily and accurately without using any nerves. Well, since physical force such as peeling off with tweezers is not used, there is no damage to the semiconductor device, and work efficiency can be improved compared to conventional methods.
実施例
以下、本発明の実施例について、図面に基づいて説明す
る。Embodiments Hereinafter, embodiments of the present invention will be described based on the drawings.
まず、＄１図〜第４図に示す第１実施例について説明す
る。第１図に示す有機被膜溶解ユニット囚は第１溶剤噴
出用ノズＩｖ１、溶剤飛散防止用壁２、回転機能付真空
吸着式半導体デバイス固定装置３、廃液回収用配管４、
溶剤供給装置５、溶剤供給用配管６、溶剤タンク７から
なっている。First, a first embodiment shown in FIGS. 1 to 4 will be described. The organic film dissolving unit shown in FIG. 1 includes a first solvent jet nozzle Iv1, a wall 2 for preventing solvent scattering, a vacuum adsorption type semiconductor device fixing device 3 with a rotating function, a pipe 4 for collecting waste liquid,
It consists of a solvent supply device 5, a solvent supply pipe 6, and a solvent tank 7.
前記回転機能付真空吸着式の半導体デバイス固定装置３
は前記溶剤飛散防止用壁２の上端開口に臨み、この半導
体デバイス固定装置３の下面に取り付けられた半導体デ
バイス８はほぼ下半分がｍＪ記溶剤飛散防止用壁２の上
端開口内に位置し、その下方に位置する前記第１溶剤噴
出用ノズｌし１の先端との間に適当間隔がおかれている
。ま友、前記第１溶剤噴出用ノズルｌは溶剤飛散防止用
壁２の内部に底部より嵌入し、このノズル１は前記溶剤
供給用配管６の上端に取り付けられている。また、前記
溶剤タンク７は溶剤供給用配管６の下端に設けられ、前
記溶剤供給装置５は浴剤供給用配管６の途中に設けられ
ている。さらに、前記廃液回収用配管４は前記溶剤飛散
防止用壁２の底部に形成されている。The vacuum suction type semiconductor device fixing device 3 with rotation function
faces the upper end opening of the solvent scattering prevention wall 2, and approximately the lower half of the semiconductor device 8 attached to the lower surface of the semiconductor device fixing device 3 is located within the upper end opening of the solvent scattering prevention wall 2, An appropriate distance is provided between the tip and the tip of the first solvent jet nozzle 1 located below. Friend, the first solvent ejection nozzle 1 fits into the interior of the solvent scattering prevention wall 2 from the bottom, and this nozzle 1 is attached to the upper end of the solvent supply pipe 6. Further, the solvent tank 7 is provided at the lower end of the solvent supply pipe 6, and the solvent supply device 5 is provided in the middle of the bath agent supply pipe 6. Further, the waste liquid recovery pipe 4 is formed at the bottom of the solvent scattering prevention wall 2.
上記構成において、下面の有機被膜９が第１溶剤噴出用
ノズル１に向くように半導体デバイス８を前記固定装置
３に取９付けた状態で、半導体デバイス８は前記固定装
置３と一体的に回転する。In the above configuration, the semiconductor device 8 is rotated integrally with the fixing device 3 with the semiconductor device 8 attached to the fixing device 3 so that the organic coating 9 on the lower surface faces the first solvent jetting nozzle 1. do.
それと同時に溶剤供給装置５により第１溶剤が供給され
て第１溶剤噴出用ノズル１から第１溶剤が噴出され、半
導体デバイス８に形成された有機被膜９に吹きつけられ
、有機被膜９は溶解される。At the same time, the first solvent is supplied by the solvent supply device 5, and is ejected from the first solvent ejection nozzle 1, and is sprayed onto the organic coating 9 formed on the semiconductor device 8, so that the organic coating 9 is dissolved. Ru.
有機被膜９が溶解した後の廃液は廃液回収用配管４を通
って回収される。The waste liquid after the organic coating 9 has been dissolved is collected through the waste liquid collection pipe 4.
次に前記有機被膜溶解ユニット囚で有機被膜９が溶解処
理され文学導体デバイス８の有機被膜９をさらに溶解処
理するための有機被膜溶解ユニット（Ｂ）について第２
図に基づき説明する。この第２図に示す有機被膜溶解ユ
ニット（＆において前記有機被膜溶解ユニット（４）と
異なるところは前記第１溶剤噴出用ノズ／Ｌ／１に代え
て第２溶剤噴出用ノズ１ｖ１０を設は次点で、他の構成
は有機被膜溶解ユニット囚と同じである。まｔ、その動
作も同じで、第２溶剤噴出用ノズＩｖ１０から噴出され
た第２溶剤は半導体デバイス８の有機液Ｉｌｌ！９に吹
きつけられて、有機被膜９は完全に溶解・除去される。Next, the organic film 9 is dissolved in the organic film dissolving unit, and a second organic film dissolving unit (B) for further dissolving the organic film 9 of the literary conductor device 8 is used.
This will be explained based on the diagram. The difference from the organic film dissolving unit (4) shown in FIG. In this respect, the other configuration is the same as that of the organic film dissolving unit.The operation is also the same, and the second solvent ejected from the second solvent ejection nozzle Iv10 is the organic liquid Ill!9 of the semiconductor device 8. The organic film 9 is completely dissolved and removed.
次に前記有機被ｐＨ溶解ユニットｆＢｌで有機被膜９が
完全に溶解・処理された半導体デバイス８を水洗いする
水洗ユニットについて第３図に基づき説明する。この第
３図に示す水洗ユニットは先浄水噴出用ノズ／Ｉ／１１
、先浄水飛牧防止用壁１２、回転機能は真空吸着式半導
体デバイス固定装置１３、廃液回収用配管１４、洗浄水
供給装置１５、洗浄水供給用配管１６．洗浄水タンク１
７からなっている。これら各部材の配置関係は前記第１
図および第２図に示す有機被膜溶解ユニット囚および（
Ｂｌと同じで、噴出される液が溶剤から水に代った点で
異なっているだけである。そこで、洗浄水噴出用ノズル
１１から噴出され定流浄水は半導体デバイス８の有機被
膜９の除去された下面に吹きつけられて、半導体デバイ
ス８は水洗いされる。水洗後の廃液は廃液回収用配管１
４を辿って回収される。Next, a washing unit for washing with water the semiconductor device 8 in which the organic film 9 has been completely dissolved and processed by the organic pH dissolving unit fBl will be explained based on FIG. The water washing unit shown in FIG.
, a wall 12 for preventing floating of pre-purified water, a vacuum suction type semiconductor device fixing device 13 with a rotating function, a waste liquid recovery pipe 14, a washing water supply device 15, a washing water supply pipe 16. Cleaning water tank 1
It consists of 7. The arrangement relationship of each of these members is as described above.
The organic film dissolving unit shown in Figures and Figure 2 and (
It is the same as Bl, the only difference being that the ejected liquid is water instead of a solvent. Then, a constant flow of purified water is ejected from the cleaning water ejection nozzle 11 and sprayed onto the lower surface of the semiconductor device 8 from which the organic coating 9 has been removed, and the semiconductor device 8 is washed with water. Waste liquid after washing is collected by waste liquid recovery pipe 1.
4 and is recovered.
次に水洗い後の半導体デバイス８を乾燥させる乾燥ユニ
ットについて第４図に基づき説明する。Next, a drying unit for drying the semiconductor device 8 after washing with water will be explained based on FIG. 4.
この第４図に示す乾・膿ユニットは、水洗後の半導体デ
バイス８を下面で固定するための回転機能付真空吸着式
半導体デバイス固定装置１８と、この固定装置１８に固
定された半導体デバイス８に向って乾燥用ガスを噴出さ
せるべく室温を含む温度制御が可能な送風口１９と、こ
の送風口１９を上端に接続し途中に乾燥用ガス供給装置
２０を設けた乾燥用ガス供給用配管２１と、この配管２
１の下端に乾燥用ガフ加熱ヒータ２２を介して接続され
たガス供給日田と、前記送風口１９から噴出する乾燥用
ガスを半導体デバイス８に対し有効に導くための壁冴と
、この壁２４の底部に形成された廃水回収用配管２５と
から構成されている。This dry/pus unit shown in FIG. an air outlet 19 capable of controlling the temperature including the room temperature so as to blow out drying gas toward the direction; and a drying gas supply piping 21 connected to the upper end of the air outlet 19 and provided with a drying gas supply device 20 in the middle. , this piping 2
1, a gas supply Hita connected to the lower end of the drying gaff heater 22 via a drying gaff heater 22, a wall for effectively guiding the drying gas ejected from the air outlet 19 to the semiconductor device 8, and It consists of a wastewater recovery pipe 25 formed at the bottom.
上記構成において、半導体デバイス８は前記固定装置１
８に固定された状態で回転し、これと同時に加熱され九
乾燥用ガスが乾燥用ガス供給装置２０により供給されて
送風口１９から噴出する。この送風口１９から噴出され
た乾燥用ガスは半導体デバイス８に当って半導体デバイ
ス８を乾燥させる。また、半導体デバイス８から落ちた
水などの廃水は廃水回収用配管２５を通って回収される
。In the above configuration, the semiconductor device 8 is attached to the fixing device 1
At the same time, a heated drying gas is supplied by a drying gas supply device 20 and ejected from an air outlet 19. The drying gas ejected from the air outlet 19 hits the semiconductor device 8 and dries the semiconductor device 8 . Furthermore, wastewater such as water that has fallen from the semiconductor device 8 is collected through the wastewater collection piping 25.
ところで第５図に示すように上記有機被膜溶解ユニット
ｔＡｌ（８）、水洗ユニット、乾燥ユニツ）ｔ−ソれぞ
れ複数づつ設けて一連に配することも可能である。By the way, as shown in FIG. 5, it is also possible to provide a plurality of each of the organic film dissolving unit tAl(8), water washing unit, drying unit) and arrange them in series.
発明の効果 、 、以上の
ように本発明によれば、従来のように顕微鏡で観察しな
がらビンセットで１枚１枚有機被膜をはがし取る必要が
なく、神経を使うことなくきわめて容易にかつ正確に有
機被膜を除去することができるのである。また、ピンセ
ットではがし取るといった物理的な力は用いていないの
で、半導体デバイスに傷をつけることもなく、従来に比
べて作業能率の向上を図ることができる。Effects of the Invention As described above, according to the present invention, there is no need to peel off the organic coating one by one with a bottle set while observing it with a microscope as in the past, and it can be done very easily and accurately without using nerves. The organic film can be removed quickly. Furthermore, since physical force such as peeling off with tweezers is not used, there is no damage to the semiconductor device, and work efficiency can be improved compared to conventional methods.
第１図〜ｗｌＩ４図は本発明の第１実施例を示し、第１
図は有機被膜溶解ユニット囚の断面図、第２図は有機被
膜溶解ユニッ） ＩＢＩの断面図、第３図は水洗ユニッ
トの断面図、第４図は乾燥ユニットの断面図、第５図は
本発明の第２実施例を示す断面図である。
１・・・第１溶剤噴出用ノズル、３・・・回転機能付真
空吸着式半導体デバイス固定装置、５・・・溶剤供給装
置、６・・・溶剤供給用配管、７・・・溶剤タンク、８
・・・半導体デバイス、９・・・有機被膜、ｌＯ・・・
第２溶剤噴出用ノズル、１１・・・洗浄水噴出用ノズ〜
、１３・・・回転機能付真空吸着式半導体デバイス固定
装置、１５・・・洗浄水供給装置、１６・・・洗浄水供
給用配管、１７・・・洗浄水タンク、１８・・・回転機
能付真空吸着式半導体デバイス固定装置、１９・・・送
風口、２０・・・乾燥用ガス供給装置、２１・・・乾燥
用ガス供給用配管、２２・・・乾燥用ガス加熱ヒータ、
囚・・・ガス供給口。
代理人 森 本 義 弘
第ｆ図
第２図
ｔｌ’ ・−１＋２：！シ％＠Ｊ＄ｔｙ；ル第３！Figures 1 to 4 show a first embodiment of the present invention.
The figure is a cross-sectional view of the organic film dissolving unit, Figure 2 is a cross-sectional view of the organic film dissolving unit (IBI), Figure 3 is a cross-sectional view of the water washing unit, Figure 4 is a cross-sectional view of the drying unit, and Figure 5 is the main body. FIG. 3 is a sectional view showing a second embodiment of the invention. DESCRIPTION OF SYMBOLS 1... First solvent ejection nozzle, 3... Vacuum suction type semiconductor device fixing device with rotation function, 5... Solvent supply device, 6... Solvent supply piping, 7... Solvent tank, 8
...Semiconductor device, 9...Organic film, lO...
Second solvent jetting nozzle, 11...Cleaning water jetting nozzle~
, 13... Vacuum suction type semiconductor device fixing device with rotation function, 15... Cleaning water supply device, 16... Cleaning water supply piping, 17... Cleaning water tank, 18... With rotation function Vacuum adsorption type semiconductor device fixing device, 19... Air outlet, 20... Drying gas supply device, 21... Drying gas supply piping, 22... Drying gas heater,
Prisoner... Gas supply port. Agent Yoshihiro Morimoto Figure f Figure 2 tl' ・-1+2:! Shi%@J$ty; Le 3rd!
Claims (1)
つけるノズルを備えた有機被膜溶解ユニットと、この有
機被膜溶解ユニットによつて有機被膜が溶解・除去され
た半導体デバイスに対し洗浄水を吹きつけるノズルを備
えた水洗ユニットと、この水洗ユニットによつて水洗い
された半導体デバイスに対し乾燥用ガスを吹きつける送
風口を備えた乾燥ユニットとからなる有機被膜除去装置
。1. An organic film dissolving unit equipped with a nozzle that sprays a solvent onto the organic film provided on the semiconductor device, and spraying cleaning water onto the semiconductor device from which the organic film has been dissolved and removed by this organic film dissolving unit. An organic film removal device comprising a washing unit equipped with a nozzle and a drying unit equipped with an air outlet that blows drying gas onto semiconductor devices washed by the washing unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13392289A JPH02310923A (en) | 1989-05-25 | 1989-05-25 | Removal apparatus of organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13392289A JPH02310923A (en) | 1989-05-25 | 1989-05-25 | Removal apparatus of organic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02310923A true JPH02310923A (en) | 1990-12-26 |
Family
ID=15116225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13392289A Pending JPH02310923A (en) | 1989-05-25 | 1989-05-25 | Removal apparatus of organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02310923A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6561204B2 (en) * | 2001-09-05 | 2003-05-13 | Silicon Integrated Systems Corp. | Apparatus and method for cleaning wafers with contact holes or via holes |
| JP2011165797A (en) * | 2010-02-08 | 2011-08-25 | Casio Computer Co Ltd | Forming method of conductor layer, and method of manufacturing semiconductor device |
| JP2014007424A (en) * | 2013-09-19 | 2014-01-16 | Teramikros Inc | Conductor layer formation method, semiconductor device manufacturing method and substrate cleaning device |
-
1989
- 1989-05-25 JP JP13392289A patent/JPH02310923A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6561204B2 (en) * | 2001-09-05 | 2003-05-13 | Silicon Integrated Systems Corp. | Apparatus and method for cleaning wafers with contact holes or via holes |
| JP2011165797A (en) * | 2010-02-08 | 2011-08-25 | Casio Computer Co Ltd | Forming method of conductor layer, and method of manufacturing semiconductor device |
| JP2014007424A (en) * | 2013-09-19 | 2014-01-16 | Teramikros Inc | Conductor layer formation method, semiconductor device manufacturing method and substrate cleaning device |
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