JPH02304810A - Hyaline conductive film and manufacture thereof - Google Patents
Hyaline conductive film and manufacture thereofInfo
- Publication number
- JPH02304810A JPH02304810A JP12383489A JP12383489A JPH02304810A JP H02304810 A JPH02304810 A JP H02304810A JP 12383489 A JP12383489 A JP 12383489A JP 12383489 A JP12383489 A JP 12383489A JP H02304810 A JPH02304810 A JP H02304810A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- layer
- hyaline
- conductive film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 210000004276 hyalin Anatomy 0.000 title abstract 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 21
- 238000002834 transmittance Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は透明導電膜およびその製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a transparent conductive film and a method for manufacturing the same.
従来より液晶表示体、エレクトロルミネッセンス、太陽
電池などの電極材料として透明導電膜が利用されており
、この透明導電膜には金、銀、銅、白金、パラジウム、
アルミニウムなどの金属薄膜と酸化第二スズ、酸化イン
ジウム、酸化亜鉛などの酸化物半導体がある。Transparent conductive films have traditionally been used as electrode materials for liquid crystal displays, electroluminescence, solar cells, etc., and these transparent conductive films include gold, silver, copper, platinum, palladium,
There are metal thin films such as aluminum and oxide semiconductors such as stannic oxide, indium oxide, and zinc oxide.
金属薄膜は低い基板温度で容易に低抵抗の膜を作製する
ことができるが、高い透過率を得るためには膜厚を非常
に薄くしなければならず機械的強度が劣るという欠点を
持っている。一方散化物半導体は優れた透光性と膜強度
を有しており導電性も良いことから実用的であり広く応
用されている。Metal thin films can be easily fabricated with low resistance at low substrate temperatures, but in order to obtain high transmittance, the film must be extremely thin, which has the disadvantage of poor mechanical strength. There is. On the other hand, dispersion semiconductors have excellent light transmittance, film strength, and good conductivity, so they are practical and widely applied.
しかしながら、液晶表示体の高品質化が近年急速に進ん
でいることに伴って表示体を大型化、大容量化した場合
、現状の透明導電膜では抵抗が高く表示にむらが出て表
示品質が低下してしまうという課題が生じている。そこ
で本発明の目的とするところは液晶表示体の高品質化を
実現させる、耐久性の優れた低抵抗な透明導電膜を提供
することにある。However, as the quality of liquid crystal displays has progressed rapidly in recent years, when displays have become larger and have larger capacities, the current transparent conductive films have high resistance, resulting in uneven display and poor display quality. The problem has arisen that it is declining. Therefore, an object of the present invention is to provide a highly durable and low-resistance transparent conductive film that can improve the quality of a liquid crystal display.
本発明の透明導電膜は、基板上に金属層が１５０Å以下
の厚さで形成され、その金属層上に酸化スズ系透明導電
層が形成された積層構造を持つことを特徴としている。The transparent conductive film of the present invention is characterized by having a laminated structure in which a metal layer is formed on a substrate with a thickness of 150 Å or less, and a tin oxide-based transparent conductive layer is formed on the metal layer.
また、本発明の透明導電膜の製造方法は、基板上に酸化
スズ系透明導電層を形成する際、その下地膜として１５
０Å以下の厚さの金属層を設けることを特徴としている
。Further, in the method for manufacturing a transparent conductive film of the present invention, when forming a tin oxide-based transparent conductive layer on a substrate, 15%
It is characterized by providing a metal layer with a thickness of 0 Å or less.
金属層は酸化スズ系透明導電層の結晶性を向上させ抵抗
を低減させるものであるが、膜厚が１５０人を超えると
透光率が低くなり実用的でない。The metal layer improves the crystallinity of the tin oxide-based transparent conductive layer and reduces the resistance, but if the thickness exceeds 150 mm, the light transmittance becomes low and it is not practical.
従って上述の範囲が望ましい。Therefore, the above range is desirable.
真空チャンバー内を５Ｘ１０−’Ｔｏｒｒの圧力まで排
気した後、アルゴンガスをチャンバー内の圧力が２ｘｌ
Ｏ−”Ｔｏｒｒになるように導入し、３００ ’Ｃに加
熱したガラス基板上にＤＣマグネトロンスパッタ法で金
属層を形成、その後、酸素が４Ｘ１０−’Ｔｏｒｒ、ア
ルゴンと酸素の和が５×１０−３になるようにガスを導
入して、ＤＣマグネトロンスパッタ法でＡＴＯ膜を作製
した。サンプルの構成は第１表のとうりである。また、
比較例として、金属層のないものと金属層の厚さが上述
の範囲外になるように作製したものについても第１表に
示し、各サンプルおよび比較例の比抵抗値と透過率を測
定した結果を第２表に示す。なお、抵抗値は４探針法で
測定した値、透光率は分光光度計で測定した波長５５０
ｎｍにおける値である。After evacuating the vacuum chamber to a pressure of 5X10-'Torr, argon gas was pumped until the pressure inside the chamber was 2XL.
A metal layer was formed by DC magnetron sputtering on a glass substrate heated to 300'C, then oxygen was introduced at 4X10'Torr and the sum of argon and oxygen was 5x10'Torr. An ATO film was produced by DC magnetron sputtering by introducing a gas such that the amount of the sample was 3. The composition of the sample was as shown in Table 1.
As comparative examples, those without a metal layer and those manufactured with a metal layer thickness outside the above range are also shown in Table 1, and the resistivity and transmittance of each sample and comparative example were measured. The results are shown in Table 2. The resistance value is the value measured using the 4-probe method, and the light transmittance is the value measured using a spectrophotometer at a wavelength of 550.
The value is in nm.
第１表
第２表
第２表かられかるとおり、本発明の透明導電膜は抵抗が
低く、透光率も７７％以上と実用的である。これに対し
、金属層のないものは抵抗値が高く、金属層が厚いもの
は透光率が悪い。As can be seen from Table 1 and Table 2, the transparent conductive film of the present invention has a low resistance and a light transmittance of 77% or more, making it practical. On the other hand, those without a metal layer have a high resistance value, and those with a thick metal layer have poor light transmittance.
以上述べたように、本発明の透明導電膜は基板上に金属
層が１５０Å以下の厚さで形成され、その金属層上に酸
化スズ系透明導電層が形成された積層構造であるので、
従来より抵抗の低いものとなっている。この膜は、ディ
スプレイデバイスの大型化・大容量化など高品質化に大
きな効果を有するものである。なお本発明の透明導電膜
は真空蒸着法、イオンブレーティング法など様々な手法
により成膜可能でありその応用分野も各種表示デバイス
、太陽電池、撮像素子などの透明電極や発熱膜、帯電防
止膜、熱線反射膜、選択透過膜など広い分野で応用可能
である。また、本発明の透明導電膜の製造方法は、基板
上に酸化スズ系透明導電層を形成する際、その下地膜と
して１５０Å以下の厚さの金属層を設けたので抵抗の低
い透明導電膜を得ることができる。As described above, the transparent conductive film of the present invention has a laminated structure in which a metal layer is formed on a substrate with a thickness of 150 Å or less, and a tin oxide-based transparent conductive layer is formed on the metal layer.
It has lower resistance than the conventional one. This film has a great effect on increasing the quality of display devices, such as increasing their size and capacity. The transparent conductive film of the present invention can be formed by various methods such as vacuum evaporation and ion blating, and its application fields include transparent electrodes, heat-generating films, and antistatic films for various display devices, solar cells, image pickup devices, etc. It can be applied in a wide range of fields such as , heat ray reflective film, selective transmission film, etc. Furthermore, in the method for manufacturing a transparent conductive film of the present invention, when forming a tin oxide-based transparent conductive layer on a substrate, a metal layer with a thickness of 150 Å or less is provided as a base film, so that a transparent conductive film with low resistance can be formed. Obtainable.
なお、金属層は酸化スズの結晶構造に寄与するものであ
り、酸化スズへドーピングされた不純物に関係なく上述
の効果が得られる。Note that the metal layer contributes to the crystal structure of tin oxide, and the above-mentioned effect can be obtained regardless of the impurity doped into the tin oxide.
以 上that's all
Claims (6)
、その金属層上に酸化スズ系透明導電層が形成された積
層構造を持つことを特徴とする透明導電膜。(1) A transparent conductive film characterized by having a laminated structure in which a metal layer is formed on a substrate with a thickness of 150 Å or less, and a tin oxide-based transparent conductive layer is formed on the metal layer.
酸化スズ（ＡＴＯ）層であることを特徴とする請求項１
記載の透明導電膜。(2) Claim 1, wherein the tin oxide-based transparent conductive layer is a tin oxide (ATO) layer doped with Sb.
The transparent conductive film described above.
Ｓｎ、Ｓｂの内の少なくとも１つを含む単金属層あるい
は合金層であることを特徴とする請求項１または請求項
２記載の透明導電膜。(3) The metal layer is Au, Pt, Ru, Cr, Al, In,
3. The transparent conductive film according to claim 1, wherein the transparent conductive film is a single metal layer or an alloy layer containing at least one of Sn and Sb.
の下地膜として１５０Å以下の厚さの金属層を設けるこ
とを特徴とする透明導電膜の製造方法。(4) A method for manufacturing a transparent conductive film, which comprises providing a metal layer with a thickness of 150 Å or less as a base film when forming a tin oxide-based transparent conductive layer on a substrate.
徴とする請求項４記載の透明導電膜の製造方法。(5) The method for producing a transparent conductive film according to claim 4, wherein the tin oxide-based transparent conductive layer is an ATO layer.
Ｓｎ、Ｓｂの内の少なくとも１つを含む単金属層あるい
は合金層であることを特徴とする請求項４または請求項
５記載の透明導電膜の製造方法。(6) The metal layer is Au, Pt, Ru, Cr, Al, In,
6. The method of manufacturing a transparent conductive film according to claim 4, wherein the transparent conductive film is a single metal layer or an alloy layer containing at least one of Sn and Sb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12383489A JPH02304810A (en) | 1989-05-17 | 1989-05-17 | Hyaline conductive film and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12383489A JPH02304810A (en) | 1989-05-17 | 1989-05-17 | Hyaline conductive film and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02304810A true JPH02304810A (en) | 1990-12-18 |
Family
ID=14870530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12383489A Pending JPH02304810A (en) | 1989-05-17 | 1989-05-17 | Hyaline conductive film and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02304810A (en) |
-
1989
- 1989-05-17 JP JP12383489A patent/JPH02304810A/en active Pending
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