JPH02300666A - Semiconductor measuring instrument - Google Patents

Semiconductor measuring instrument

Info

Publication number
JPH02300666A
JPH02300666A JP12310889A JP12310889A JPH02300666A JP H02300666 A JPH02300666 A JP H02300666A JP 12310889 A JP12310889 A JP 12310889A JP 12310889 A JP12310889 A JP 12310889A JP H02300666 A JPH02300666 A JP H02300666A
Authority
JP
Japan
Prior art keywords
mercury
measured
leads
under test
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12310889A
Other languages
Japanese (ja)
Inventor
Naoyuki Shinonaga
直之 篠永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12310889A priority Critical patent/JPH02300666A/en
Publication of JPH02300666A publication Critical patent/JPH02300666A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

PURPOSE:To securely connect a measured element test device and an element to be measured electrically by providing mercury as a contact means which contacts plural leads of the elements to be measured electrically. CONSTITUTION:The plural terminals 6 are connected electrically to the measured element test device, and the plural leads 2 of the element 1 to be measured are inserted into grooves 4 by a measured element moving device to come into contact with the mercury 5 in the grooves 4 electrically. Consequently, the measured element test device and element 1 are connected electrically and securely and the electric characteristics of the element 1 are measured. Further, the leads 2 are inserted cracking cuts of a mercury removal film to come into contact with the mercury 5 in the grooves 4 electrically. When the leads 2 are taken out, the mercury 5 sticking on the leads 2 contacts the mercury removal film and is put back to the grooves 4. The mercury 5 sticking on the leads 2 can be removed through the above operation.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は被測定素子の複数のリードと接触させ被測定
素子の電気的特性を測定する半導体測定装置に関するも
のである0 〔従来の技術〕 第3図は従来の半導体測定装置の斜視図で、図において
、(8)は被測定素子(1)の複数のリード(2)と電
気的に接触するように複数のリード(2)の配列に合わ
して絶縁ブロック(3)に埋設された複数のコンタクト
端子である。(6)は絶縁ブロック(3)に埋設された
複数のコンタクト端子(8)が絶縁ブロック(3)のコ
ンタクト端子存在面とは反対面から絶縁ブロック面に対
し垂直に導出する複数の端子である0次に半導体測定装
置の動作について説明する0半導体測定装置の複数の端
子(6)は図示しない被測定素子テスト装置と電気的に
接続され、被測定素子(1)の複数のリード(2)は図
示しない被測定素子移動装置により、複数のフンタクト
端子(8)と電気的に接触する。この動作により図示し
ない被測定素子テスト装置と被測定素子(1)とが電気
的接続がなされ、被測定素子の電気的特性の測定を行う
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor measuring device that measures the electrical characteristics of a device under test by bringing it into contact with a plurality of leads of the device under test. [Prior Art] FIG. 3 is a perspective view of a conventional semiconductor measuring device. In the figure, (8) is an arrangement of a plurality of leads (2) so as to be in electrical contact with a plurality of leads (2) of a device to be measured (1). A plurality of contact terminals are embedded in the insulating block (3) in accordance with the above. (6) is a plurality of terminals in which a plurality of contact terminals (8) embedded in an insulating block (3) are led out perpendicularly to the insulating block surface from the opposite surface of the insulating block (3) from the surface on which the contact terminals exist. 0 Next, the operation of the semiconductor measuring device will be explained. 0 A plurality of terminals (6) of the semiconductor measuring device are electrically connected to a device under test device (not shown), and a plurality of leads (2) of the device under test (1) is brought into electrical contact with a plurality of touch terminals (8) by a device to be measured (not shown). This operation establishes an electrical connection between the device to be measured test device (not shown) and the device to be measured (1), and the electrical characteristics of the device to be measured are measured.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体測定装置は以上のように構成されていたの
で、被測定素子の複数のリードと半導体測定装置のコン
タクト手段である複数のコンタクト端子との電気的な接
触不良が起こり、被測定素子テスト装置と被測定素子と
が電気的に接続されないという問題があった。
Conventional semiconductor measurement equipment was configured as described above, which caused electrical contact failures between the multiple leads of the device under test and the multiple contact terminals that were the contact means of the semiconductor measurement equipment, resulting in a failure in testing the device under test. There was a problem in that the device and the device under test were not electrically connected.

この発明は上記のような問題を解消するためになされた
もので、被測定素子の複数のリードと半導体測定装置の
複数のコンタクト手段との電気的な接触不良を無くシ、
被測定素子テスト装置と被測定素子とを確実に電気的接
続させることのできる半導体測定装置を得ることを目的
とする。
This invention was made in order to solve the above-mentioned problems, and eliminates electrical contact failure between the plurality of leads of the device to be measured and the plurality of contact means of the semiconductor measuring device.
It is an object of the present invention to provide a semiconductor measuring device that can reliably electrically connect a device under test test device and a device under test.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体測定装置は、絶縁体のブロックに
被測定素子の複数のリード配列に合わせて配列した複数
の溝と、この複数の溝に注入した水銀と、この水銀と電
気的に導通するように絶縁体に埋設した複数の導電体と
を備えたものである。
A semiconductor measuring device according to the present invention includes a plurality of grooves arranged in an insulating block according to a plurality of lead arrangements of a device to be measured, mercury injected into the plurality of grooves, and electrical conduction with the mercury. It is equipped with a plurality of conductors embedded in an insulator.

〔作用〕 この発明における半導体測定装置は、被測定素子の複数
のリードと電気的に接触するコンタクト手段として水銀
を備えたことにより、被測定素子の複数のリードと半導
体測定装置の複数のコンタクト手段との電気的な接触不
良を無くシ、被測定素子テスト装置と被測定素子とを確
実に電気的接続させる。
[Operation] The semiconductor measuring device according to the present invention includes mercury as a contact means for electrically contacting the plurality of leads of the device to be measured, so that the plurality of leads of the device to be measured and the plurality of contact means of the semiconductor measuring device To ensure electrical connection between an element to be measured test device and an element to be measured by eliminating poor electrical contact between the element and the element to be measured.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例による半導体測定装置の斜
視図である。図において、(4)は被測定素子(1)の
複数のリード(2)が挿入される複数の溝で、この複数
の溝(4)は絶縁物質から成る絶縁ブロック(3)に複
数のリード(2)の配列に合わせて配列したもので、そ
れぞれの溝(4)には水銀(5)が注入しである。
FIG. 1 is a perspective view of a semiconductor measuring device according to an embodiment of the present invention. In the figure, (4) is a plurality of grooves into which a plurality of leads (2) of a device to be measured (1) are inserted, and the plurality of grooves (4) are an insulating block (3) made of an insulating material, in which a plurality of leads are inserted. (2), and each groove (4) is injected with mercury (5).

(6)は溝(4)内の水銀(5)と電気的に導通ずるよ
うに絶縁ブロック(3)に埋設され、溝(4)が存在す
る絶縁ブロック面とは反対面から絶縁ブロック面に対し
垂直にそれぞれ導出する複数の端子である。
(6) is buried in the insulating block (3) so as to be electrically conductive with the mercury (5) in the groove (4), and is connected to the insulating block surface from the opposite side to the insulating block surface where the groove (4) is present. A plurality of terminals are respectively led out perpendicularly to the terminal.

第2図(a)は水銀除却機能を示す斜視図で、図におい
て、(7)はゴム板に十字の切れ目を入れた水銀除却膜
で、溝(4)入口部に水銀除却膜(7)を張り付けたも
のが水銀除J′JIJ機能を果す。
Fig. 2 (a) is a perspective view showing the mercury removal function. The material pasted with J'JIJ functions as a mercury remover.

次に、上記実施例の動作について説明する。半導体測定
装置の複数の端子(6)は図示し々い被測定素子テスト
装置と電気的に接続され、被測定素子(1)の複数のリ
ード(2)は図示しない被測定素子移動装置により複数
の溝(4)に挿入され溝(4)内の水銀(5)と電気的
に接触する0以上の動作および構造により図示しない被
測定素子テスト装置と被測定素子(1)とが電気的接続
が確実になされ、被測定素子の電気的特性の測定を行う
Next, the operation of the above embodiment will be explained. A plurality of terminals (6) of the semiconductor measuring device are electrically connected to a device under test test device (not shown), and a plurality of leads (2) of the device under test (1) are connected to a plurality of terminals (6) by a device under test moving device (not shown). The device under test (1) is electrically connected to the device under test (not shown) through the operation and structure of 0 or more elements that are inserted into the groove (4) and electrically contact the mercury (5) in the groove (4). is performed reliably, and the electrical characteristics of the device under test are measured.

第2図(b)はリード挿入時の斜視図である。リード(
2)は水銀除却膜(7)の切れ目を割って挿入され、溝
(4)内の水銀(5)と電気的接触をする○リード(2
)の挿出時、リード(2)に付着した水銀(5)は水銀
除却膜(7)に触れ溝(4)に戻される。この作用によ
りリード(2)に付着した水銀(5)を除去することが
できる。
FIG. 2(b) is a perspective view when the lead is inserted. Lead (
2) is inserted through a cut in the mercury removal membrane (7) and makes electrical contact with the mercury (5) in the groove (4).
), the mercury (5) adhering to the lead (2) touches the mercury removal membrane (7) and is returned to the groove (4). This action allows the mercury (5) attached to the lead (2) to be removed.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれは、絶縁体のブロックに被
測定素子の複数のリード配列に合わせて配列した複数の
溝と、この複数の溝に注入した水銀と、前記水銀と電気
的に導通するよう絶縁体に埋設した複数の導電体とを備
えたので、被測定素子の複数のリードと半導体測定装置
の複数のコンタクト手段との電気的な接触不良が無くな
り、被測定素子テスト装置と被測定素子とを確実に電気
的接続させることができるという効果がある。
As described above, according to the present invention, a plurality of grooves are arranged in an insulating block according to the plurality of lead arrangements of the device to be measured, and mercury injected into the plurality of grooves is electrically conductive with the mercury. Since the device is equipped with a plurality of conductors embedded in the insulator, there is no electrical contact failure between the plurality of leads of the device under test and the plurality of contact means of the semiconductor measuring device, and the connection between the device under test test device and the device under test is eliminated. This has the effect of ensuring reliable electrical connection with the measuring element.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例による半導体測定装置の展
開斜視図、第2図(a)は水銀除却機能を示す展開斜視
図、第2図(b)はリード挿入時の斜視図、第3図は従
来の半導体測定装置の展開斜視図である。 図において、(1)は被測定素子、(2)はリード、(
3)は絶縁ブロック、(4)は溝、(5)は水銀、(6
)は端子、(7)は水銀除却膜を示す。 なお、図中、同一符号は同一、又は相当部分を示す。
FIG. 1 is an exploded perspective view of a semiconductor measuring device according to an embodiment of the present invention, FIG. 2(a) is an exploded perspective view showing a mercury removal function, FIG. FIG. 3 is an exploded perspective view of a conventional semiconductor measuring device. In the figure, (1) is the device under test, (2) is the lead, (
3) is an insulating block, (4) is a groove, (5) is mercury, (6
) indicates the terminal, and (7) indicates the mercury removal membrane. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 被測定素子の複数のリードと電気的に接触させ被測定素
子の電気的特性を測定する半導体測定装置において、絶
縁体のブロックに前記被測定素子の複数のリード配列に
合わし配列した複数の溝と、前記複数の溝に注入した水
銀と、この水銀と電気的に導通するよう前記絶縁体に埋
設した複数の導電体と、前記ブロックの溝入口部に備え
た水銀除去膜とを備えたことを特徴とする半導体測定装
置。
In a semiconductor measuring device that measures the electrical characteristics of a device under test by electrically contacting a plurality of leads of the device under test, a block of an insulator has a plurality of grooves arranged in accordance with the arrangement of the plurality of leads of the device under test. , comprising mercury injected into the plurality of grooves, a plurality of conductors embedded in the insulator to be electrically conductive with the mercury, and a mercury removal film provided at the groove entrance part of the block. Features of semiconductor measurement equipment.
JP12310889A 1989-05-16 1989-05-16 Semiconductor measuring instrument Pending JPH02300666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12310889A JPH02300666A (en) 1989-05-16 1989-05-16 Semiconductor measuring instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12310889A JPH02300666A (en) 1989-05-16 1989-05-16 Semiconductor measuring instrument

Publications (1)

Publication Number Publication Date
JPH02300666A true JPH02300666A (en) 1990-12-12

Family

ID=14852376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12310889A Pending JPH02300666A (en) 1989-05-16 1989-05-16 Semiconductor measuring instrument

Country Status (1)

Country Link
JP (1) JPH02300666A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120529A (en) * 1993-10-26 1995-05-12 Nec Corp Semiconductor test device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120529A (en) * 1993-10-26 1995-05-12 Nec Corp Semiconductor test device

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