JPH02298107A - Voltage controlled oscillator - Google Patents
Voltage controlled oscillatorInfo
- Publication number
- JPH02298107A JPH02298107A JP11739089A JP11739089A JPH02298107A JP H02298107 A JPH02298107 A JP H02298107A JP 11739089 A JP11739089 A JP 11739089A JP 11739089 A JP11739089 A JP 11739089A JP H02298107 A JPH02298107 A JP H02298107A
- Authority
- JP
- Japan
- Prior art keywords
- modulation
- circuit
- gate
- capacitance
- controlled oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 claims abstract description 14
- 230000009977 dual effect Effects 0.000 claims abstract description 12
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は周波数シンセサイザに使用する電圧制御発振器
に関し、特に電圧可変素子として可変容量ダイオードを
用いた電圧制御発振器に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a voltage controlled oscillator used in a frequency synthesizer, and particularly to a voltage controlled oscillator using a variable capacitance diode as a voltage variable element.
第２図に従来の電圧制御発振器の回路図を示す。 FIG. 2 shows a circuit diagram of a conventional voltage controlled oscillator.
この電圧制御発振器は第２図に示すように、負性抵抗発
生回路１と共振回路２と変調回路３とから構成されてい
る。このとき負性抵抗発生回路ｌはデュアルゲート電界
効果トランジスタ（以下ＦＥＴと略称）４とソースイン
ダクタ５．ソース抵抗６、ドレイン・ソース間容量７．
ソース容量８゜ゲート１容量９．ゲート２容量ｉｏ、
ゲート１の直流バイアス抵抗１１．１２．１３．
ゲート２の直流バイアス抵抗１４．１５．１６．￥ｌＬ
源用チョークコイル１７．を源接地容量１８．共振回路
２への結合容量１９．を原端子２０．出力結合容［２１
，出力端子２２からなる。そして共振回路２は共振用コ
イル２３．共振用容量２４と一端が接地された可変容量
ダイオード２６との結合容量２５．寄生発振防止用抵抗
２７．高周波阻止用インタツタ２８゜接地容量２９．可
変容量ダイオード２６の直流バイアス端子３０からなる
。変調回路３は共振回路２との結合容量３１．可変容量
ダイオード３２．抵抗３３．接地容量３４．変調久方端
子３５がらなっている。ここで直流バイアス端子３０の
バイアス電圧を変化させることにより、可変容量ダイオ
ード２６の容量を変化させて電圧制御発振器の発振周波
数を変化することができる。As shown in FIG. 2, this voltage controlled oscillator is composed of a negative resistance generating circuit 1, a resonant circuit 2, and a modulation circuit 3. At this time, the negative resistance generating circuit 1 includes a dual gate field effect transistor (hereinafter abbreviated as FET) 4 and a source inductor 5. Source resistance 6, drain-source capacitance 7.
Source capacitance 8° Gate 1 capacitance 9. gate 2 capacity io,
Gate 1 DC bias resistance 11.12.13.
Gate 2 DC bias resistance 14.15.16. ￥lL
Source choke coil 17. The source grounding capacity 18. Coupling capacitance to resonance circuit 2 19. The original terminal 20. Output coupling capacity [21
, and an output terminal 22. The resonant circuit 2 includes a resonant coil 23. Coupling capacitance 25 between the resonance capacitor 24 and the variable capacitance diode 26 whose one end is grounded. Parasitic oscillation prevention resistor 27. Interconnector for high frequency blocking 28° Grounding capacity 29. It consists of a DC bias terminal 30 of a variable capacitance diode 26. The modulation circuit 3 has a coupling capacitance 31 with the resonance circuit 2. Variable capacitance diode 32. Resistance 33. Ground capacity 34. The modulation terminal 35 consists of a modulation terminal 35. By changing the bias voltage of the DC bias terminal 30, the capacitance of the variable capacitance diode 26 can be changed and the oscillation frequency of the voltage controlled oscillator can be changed.
しかし、前記従来のものには、変調入力レベルを一定と
したとき１発振周波数を変化させると。However, in the conventional method, when the modulation input level is kept constant, the oscillation frequency is changed.
可変容量ダイオード２６の容量が変化するため。This is because the capacitance of the variable capacitance diode 26 changes.
変調度も変化するという欠点がある。The disadvantage is that the degree of modulation also changes.
本発明はこの欠点を解決すべくなされたもので。The present invention was made to solve this drawback.
その目的は発振周波数を変化させても、変調度の変化し
ない電圧制御発振器を提供することにある。The purpose is to provide a voltage controlled oscillator in which the degree of modulation does not change even if the oscillation frequency is changed.
本発明は上記の目的を達成するため、電圧制御発振器に
おいて、負性抵抗発生回路を構成するデュアルゲー）
ＦＥＴのゲート２のバイアス電圧供給ラインに変調入力
を接続したものである。In order to achieve the above object, the present invention provides a voltage controlled oscillator (a dual gate) that constitutes a negative resistance generation circuit.
A modulation input is connected to the bias voltage supply line of gate 2 of the FET.
〔作用〕
したがって９本発明においては、可変容量ダイオードの
容量が変化しても負性抵抗発生回路のデュアルゲートＦ
ＥＴのゲート２には影響をおよぼさないので変調度が変
化しない電圧制御発振回路が実現できる。[Operation] Therefore, in the present invention, even if the capacitance of the variable capacitance diode changes, the dual gate F of the negative resistance generating circuit
Since the gate 2 of the ET is not affected, it is possible to realize a voltage controlled oscillation circuit in which the degree of modulation does not change.
以下９本発明を図面に示す実施例に基づいて詳細に説明
する。第１図は本発明による電圧制御発振器の一実施例
を示す回路図である。同図において、１は負性抵抗発生
回路であって、デュアルゲートＦＥＴ４とノースインダ
クタ５．ソース抵抗６、ドレイン・ソース間容量７．ソ
ース容量８゜ゲート１容量９．ゲート２容量１０．ゲー
ト１の直流バイアス抵抗１１．１２．１３．ゲート２の
直流バイアス抵抗１４．１５．１６．電源用チョークコ
イル１７．電源接地容量１８．共振回路２への結合容量
１９．電源端子２０．出力結合容量２１．出力端子２２
からなる。そして共振回路２は共振用コイル２３．共振
用容量２４と一端が接地された可変容量ダイオード２６
との結合容量２５．寄生発振防止用抵抗２７．高周波阻
止用インダクタ２８．接地容量２９．可変容量ダイオー
ド２６の直流バイアス端子３０からなる。変調回路３は
デュアルゲー）ＦＥＴ４のゲート２の直流バイアス抵抗
１６に接地した直流カット用容量３６と変調端子３５か
もなる。すなわち本実施例が第２図の従来例のものと異
なる点は、変調回路として、可変容量ダイオードを使用
することなく、変調入力をデュアルゲートＦ Ｅ Ｔの
ゲート２に接続したことにある。Hereinafter, nine embodiments of the present invention will be described in detail based on embodiments shown in the drawings. FIG. 1 is a circuit diagram showing an embodiment of a voltage controlled oscillator according to the present invention. In the figure, 1 is a negative resistance generating circuit, which includes a dual gate FET 4 and a north inductor 5. Source resistance 6, drain-source capacitance 7. Source capacitance 8° Gate 1 capacitance 9. Gate 2 capacity 10. Gate 1 DC bias resistance 11.12.13. Gate 2 DC bias resistance 14.15.16. Power supply choke coil 17. Power supply grounding capacity 18. Coupling capacitance to resonance circuit 2 19. Power terminal 20. Output coupling capacitance 21. Output terminal 22
Consisting of The resonant circuit 2 includes a resonant coil 23. A resonance capacitor 24 and a variable capacitance diode 26 whose one end is grounded.
Coupling capacity with 25. Parasitic oscillation prevention resistor 27. High frequency blocking inductor 28. Ground capacity 29. It consists of a DC bias terminal 30 of a variable capacitance diode 26. The modulation circuit 3 also includes a DC cut capacitor 36 grounded to the DC bias resistor 16 of the gate 2 of the dual gate FET 4 and a modulation terminal 35. That is, this embodiment differs from the conventional example shown in FIG. 2 in that the modulation input is connected to the gate 2 of the dual gate FET without using a variable capacitance diode as the modulation circuit.
なお図中同一符号は同一または相当部分を示している。Note that the same reference numerals in the figures indicate the same or equivalent parts.
このように前記実施例のものによると発振回路の容量を
可変容量ダイオード３２の容量変化によって変調をかけ
るのではないので発振周波数を変化させるため、可変容
量ダイオード２６の容量を変化させても、変調度が変化
しない電圧制御発振器が得られる。また、この実施例で
はゲート２に変調入力を接続しているが、ゲー）１に接
続しても同様の効果が得られる。In this way, according to the embodiment described above, the capacitance of the oscillation circuit is not modulated by changing the capacitance of the variable capacitance diode 32, so the oscillation frequency is changed, so even if the capacitance of the variable capacitance diode 26 is changed, the modulation is not performed. A voltage controlled oscillator whose frequency does not change is obtained. Further, in this embodiment, the modulation input is connected to gate 2, but the same effect can be obtained even if it is connected to gate 1.
以上説明したように９本発明によれはデュアルゲートＦ
ＥＴのゲートに変調をかけることにより。As explained above, according to the present invention, the dual gate F
By modulating the gate of ET.
発振周波数を変化させても変調度がほとんど変化しない
電圧制御発振器が実現できる。It is possible to realize a voltage controlled oscillator in which the degree of modulation hardly changes even if the oscillation frequency is changed.
また、変調用に可変容量ダイオードを使用しないので２
回路が簡単になり安価にもなる。Also, since no variable capacitance diode is used for modulation, 2
The circuit becomes simpler and cheaper.
第１図は本発明の一実施例を示す回路図、第２図は従来
の電圧制御発振器の一例を示す回路図である。
１：負性抵抗発生回路、２：共振回路、３：変調回路、
４ ：ＦＥＴ、５，１７，２８：インダクタ。
６、１１．１２．１３．１４．１５．１６．２７．３３
：抵抗。
７、８．９． １０．１．８．１９．２１．２４．２５
．２９． ：３Ｌ。
３４、３６ ：容量、２３：共振用コイル、２６．３２
：可変容量ダイオード、２０：電源端子、２２：出力端
子、３０：直流バイアス端子、３５：変調端子。。FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a circuit diagram showing an example of a conventional voltage controlled oscillator. 1: Negative resistance generation circuit, 2: Resonance circuit, 3: Modulation circuit,
4: FET, 5, 17, 28: Inductor. 6, 11.12.13.14.15.16.27.33
:resistance. 7, 8.9. 10.1.8.19.21.24.25
．． 29. :3L. 34, 36: Capacity, 23: Resonance coil, 26.32
: Variable capacitance diode, 20: Power supply terminal, 22: Output terminal, 30: DC bias terminal, 35: Modulation terminal. .
Claims (1)
このデュアルゲートＦＥＴのゲートに結合された変調回
路と前記負性抵抗発生回路に結合された、共振周波数を
可変すべく挿入された可変容量ダイオードを含む共振回
路を具備し、前記可変容量ダイオードに供給される直流
電圧によって発振周波数を制御するようにしたことを特
徴とする電圧制御発振器。1. A negative resistance generation circuit using a dual gate FET, a modulation circuit coupled to the gate of this dual gate FET, and a variable capacitance diode inserted to vary the resonance frequency, coupled to the negative resistance generation circuit. 1. A voltage controlled oscillator comprising: a resonant circuit including a resonant circuit, the oscillation frequency of which is controlled by a DC voltage supplied to the variable capacitance diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11739089A JPH02298107A (en) | 1989-05-12 | 1989-05-12 | Voltage controlled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11739089A JPH02298107A (en) | 1989-05-12 | 1989-05-12 | Voltage controlled oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02298107A true JPH02298107A (en) | 1990-12-10 |
Family
ID=14710468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11739089A Pending JPH02298107A (en) | 1989-05-12 | 1989-05-12 | Voltage controlled oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02298107A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6760575B2 (en) | 1998-05-29 | 2004-07-06 | Silicon Laboratories, Inc. | Method and apparatus for generating a variable capacitance for synthesizing high-frequency signals for wireless communications |
| US6965761B2 (en) | 1998-05-29 | 2005-11-15 | Silicon Laboratories, Inc. | Controlled oscillator circuitry for synthesizing high-frequency signals and associated method |
| US6993307B2 (en) | 1998-05-29 | 2006-01-31 | Silicon Laboratories, Inc. | Method and apparatus for operating a PLL with a phase detector/sample hold circuit for synthesizing high-frequency signals for wireless communications |
-
1989
- 1989-05-12 JP JP11739089A patent/JPH02298107A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6760575B2 (en) | 1998-05-29 | 2004-07-06 | Silicon Laboratories, Inc. | Method and apparatus for generating a variable capacitance for synthesizing high-frequency signals for wireless communications |
| US6965761B2 (en) | 1998-05-29 | 2005-11-15 | Silicon Laboratories, Inc. | Controlled oscillator circuitry for synthesizing high-frequency signals and associated method |
| US6993307B2 (en) | 1998-05-29 | 2006-01-31 | Silicon Laboratories, Inc. | Method and apparatus for operating a PLL with a phase detector/sample hold circuit for synthesizing high-frequency signals for wireless communications |
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