JPH02296793A - Multi-growth chamber reaction tube - Google Patents

Abstract

PURPOSE:To easily prevent the interference of gases between respective growth chambers by providing mechanisms for blowing the gases out of the partition parts of the respective growth chambers and forming curtains by gaseous flow between the respective growth chambers. CONSTITUTION:Reaction tubes 6, 6... of a small diameter to constitute the growth chambers are integrated by a reaction tube 1 of a large diameter in a growth region. For example, a Ga metal 7 and an In metal 8 are set in the respective reaction tubes 6. While substrates 9 of a holder 10 are successively rotated to the apertures of the respective growth chambers 6 in the growth region, the substrates are disposed to the apertures and vapor growth is executed on the substrates 9. Gas introducing pipes 5 are provided in the partition parts of the respective growth chambers 6 of such multi-growth chamber reaction tube and gas supply openings 2 thereof are opened in the growth region. The air curtains to partition between the growth chambers 6 are formed by the gaseous flow from the supply openings 2. The infiltrating of the growth in the period to be superposed in order to fill the atmosphere of the other chamber with the next growth atmosphere during the growth in one chamber is easily prevented in this way.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a multi-growth chamber reaction tube used in a vapor phase growth method for compound semiconductors having heterojunctions.

In particular, the present invention relates to a multi-growth chamber reaction tube that improves the steepness of heterojunctions in hydride VPE.

[Conventional technology]

Conventionally, as a multi-growth chamber reaction tube for hydride VPE, individual small-diameter reaction tubes (growth chambers) 6, 6, . The general structure was to combine the reaction tubes into one large-diameter reaction tube 1. In the figure, 3 is a group II tube, 4 is a group II tube, 7 is a Ga metal, and 8 is an In
It's metal.

[Problem to be solved by the invention]

In the above-mentioned conventional hydride VPE using multiple growth chamber reaction tubes, the region immediately after the confluence of the individual reaction tubes 6 is used as the growth region, so that at the interface of the Peter junction, there is no flow between the individual growth chambers. The disadvantage is that it is susceptible to interference from other components.

In order to prevent components from entering the growth chamber, methods such as closing the growth chamber other than those used for growth, reducing the flow rate in chambers that are not involved in growth, and increasing the flow rate in the growth chamber are used. No effect has been obtained.

An object of the present invention is to provide a multi-growth chamber reaction tube that solves the above problems.

[Differences between the invention and the prior art]

The present invention differs from the conventional multi-growth chamber reaction tube described above in that it prevents gas interference between the growth chambers.

[Means to solve the problem]

In order to achieve the above object, the present invention provides a multi-growth chamber reaction tube used in the chemical vapor deposition method, in which gas is blown out from the partitions of each growth chamber to form a curtain between each growth chamber by airflow. It has the following.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1(a) is a cross-sectional view showing one embodiment of the present invention.
Figure (b) is a longitudinal sectional view of the same.

In the figure, a small diameter reaction tube 6°6...
・is accumulated in the large-diameter reaction tube 1 in the growth region, and each reaction tube 6
Ga metal 7, In metal 8, etc. are set in the growth chamber, and in the growth region, the substrate 9 of the holder IO is sequentially placed in the opening of each growth chamber 6, and vapor phase growth is performed on the substrate 9. conduct. In the figure, 3 is a group III hip bone.

The present invention provides a gas introduction pipe 5 in the partition part of each growth chamber 6,
The gas outlet 2 is opened to the growth region, and the gas outlet 2 is opened to the growth region.
The gas flow from the growth chamber forms an air curtain that separates the growth chambers from each other.

To explain the growth of an InGaAs-based leaf crystal (double heterocrystal), an n-type InP substrate 9 is mounted on a holder 10 and inserted into a large-diameter reaction tube 1 up to a predetermined growth region.

■Original tube 3. V group tube 4. Hydrogen was supplied from each gas introduction pipe 5 at a flow rate of 1127 Ilin to replace the inside of the growth chamber 6 with hydrogen. At this time, the InP substrate 9 is positioned at the lower stage, that is, on the side of the H growth chamber.

Next, the entire reaction tube is heated to 50° C. for the hip bone metal source portion and 650° C. for the substrate portion using a heater. However, when the temperature of the substrate section reaches 4006 C or more, phosphine is flowed into the furnace at 20 cc/min from the group II tube 4 on the side of the H growth chamber to prevent dissociation of phosphorus from the substrate 9. Once the set temperature has been reached, ■ the original tube on the growth chamber side of I.

Gas for In, P growth from V hip bone, i.e. hydrochloric acid 2
cc/win, Osphine 8 After a few minutes of flowing cc/win, rotate the holder lO and insert the InP substrate 9.
Move it to the growth chamber (■), turn off the phosphine on the side of the growth chamber (H), and start growth. Several minutes before the desired InP layer is grown, gas components on the side of the H growth chamber, hydrochloric acid, and phosphine are added to I.
The atmosphere is started to be changed to the conditions for growing the nGaAs layer. Once the desired InP layer has been grown, rotate the holder IO so that the substrate 9 faces the growth chamber (■) and at the same time
The supply of hydrochloric acid and phosphine to the growth chamber 6 side is stopped.
Several minutes before the growth of the InGaAs layer is finished, hydrochloric acid and phosphine are again supplied to the I growth chamber side to change the atmosphere to InP growth. After the InGaAs system is grown, the holder 10 is rotated again, the substrate 9 is placed on the side of the growth chamber (I), and the supply of hydrochloric acid and phosphine to the growth chamber (2) is stopped.

Before the InP growth is completed, phosphine is poured into the growth chamber (2) to prevent dissociation of phosphorus to prepare the atmosphere.

When the growth of InP is completed, the substrate 9 is placed on the side of the growth chamber (2) and placed on the side of the growth chamber (2), and the heater is removed from the reaction tube to lower the temperature. During this time, 112/win is always output from gas outlet 2.
Flow hydrogen to form an airflow curtain between the growth chambers ■ and ■.

InP/InGaAs/In created by the above procedure
The DB crystal of P was a high-quality crystal with little fluctuation in composition due to components coming around from other chambers, and no cross hatching occurred up to the periphery of the wafer.

Although the present embodiment has been described using only two growth chambers, the same applies to three or more growth chambers.

〔Effect of the invention〕

As explained above, the present invention blows out gas from the partition part of the growth chamber and forms a curtain with the airflow. This has the effect of easily preventing wraparound.

[Brief explanation of drawings]

FIG. 1(a) is a cross-sectional view of one embodiment of the present invention;
b) is a sectional view taken along line A-A' in Fig. 1(a), Fig. 2(a)
Figure 2(b) is a cross-sectional view showing a conventional two-growth chamber reaction tube.
) is a sectional view taken along line AA'lil in FIG. 2(a). 1...Large diameter reaction tube 2...Gas outlet 3.
...■Group I hip bone 4...Group tube 5...Gas inlet 6...Small diameter reaction tube 7...Ga
Metal 8-4n Metal 9... InP substrate 10... Holder Fig. 1 A' Fig. 2 (b) Fig. 1 Fig. 2

Claims (1)

[Claims] (1) A multi-growth chamber reaction tube used in chemical vapor deposition is characterized by having a mechanism for blowing out gas from the partitions of each growth chamber to form a curtain between each growth chamber by airflow. Growth chamber reaction tube.