JPH02296244A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPH02296244A JPH02296244A JP1142288A JP14228889A JPH02296244A JP H02296244 A JPH02296244 A JP H02296244A JP 1142288 A JP1142288 A JP 1142288A JP 14228889 A JP14228889 A JP 14228889A JP H02296244 A JPH02296244 A JP H02296244A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray
- electric charge
- absorbing layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000007547 defect Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007689 inspection Methods 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 8
- 238000001015 X-ray lithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 102220061225 rs786201115 Human genes 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、超高密度半導体の製造において、ウェハ上す
こ回路の構造的な画像化を再現をするためのＸ線リソグ
ラフィ（Ｌｆｔｈｏｇｒａｐｈｙ）マスクに関するもの
で、更に詳細にはマイクロ単位の微細パターンのマスク
に対してその規格化された線幅の寸法及び欠陥等を正確
に検査をするために、この構造を改善されたＸ線マスク
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray lithography mask for reproducing structural imaging of circuits on a wafer in the production of ultra-high density semiconductors. More specifically, the present invention relates to an X-ray mask having an improved structure in order to accurately inspect the standardized line width dimension, defects, etc. of a mask with a fine pattern in micro units.
半導体分野において、素子の線幅の大きさが、０．１〜
１μｍ程度の高密度なパターンを要求され、半導体素子
の集積度が大きくなり、今現在の状勢においてその大き
さが、やはりμｍ以下の微細化されている実情である。In the semiconductor field, the line width of an element is 0.1~
High-density patterns of about 1 μm are required, and the degree of integration of semiconductor devices has increased, and in the current situation, the size of semiconductor devices has been reduced to micrometers or less.
このことは、通常の写真印刷技術ではなし遂げることが
できない。μｍ以下の線幅を有しているパターンを形成
するだめの技術は、電子ビーム或いはＸ線リソグラフィ
を利用されている。This cannot be accomplished with conventional photographic printing techniques. Techniques for forming patterns having line widths of .mu.m or less utilize electron beam or X-ray lithography.
電子ビームリソグラフィは、電子ビームを利用した画像
走査（ｉｍａｇｅ Ｓｃａｎｎｉｎｇ）方法によって微
細化された画像を直接マスクに転写することができる。In electron beam lithography, a microscopic image can be directly transferred onto a mask using an image scanning method using an electron beam.
しかしこの装置は、コストが高いばかりではなく複雑な
構造のために生産性が低い短所をもち、他方のＸ線リソ
グラフィは、その作動が通常の写真印刷技術と類似し、
かつ比較的簡単な構造であるので操作及び線幅の調節が
容易にでき、さらに製造歩留まりの高い長所をもってい
る。However, this equipment has the disadvantage of not only high cost but also low productivity due to its complicated structure.
Moreover, since it has a relatively simple structure, it can be easily operated and the line width can be adjusted, and furthermore, it has the advantage of high manufacturing yield.
このようなＸ線リソグラフィシステムは、アメリカ合衆
国特許第３８７３８２４号（１９７５年３月２５日）に
開示されいる。第１図において、Ｘ線リソグラフィシス
テムの概略的な構成を図示されてるが、特にそのパター
ンの形成過程において、下記に述べる。Such an X-ray lithography system is disclosed in US Pat. No. 3,873,824 (March 25, 1975). FIG. 1 shows a schematic configuration of an X-ray lithography system, and the pattern forming process will be described below.
電子ソース１１から与えられた電子ビーム１２は、Ｘ線
ターゲット１３の所定部位に入射され、さらに入射され
た電子ビームエ２がＸ線ターゲット１３と反応し、Ｘ線
ターゲット１３からＸ線１５を放出する。この時放出さ
れたＸ線は、高真空状態において４〜７人の波長範囲で
、透過し易いソフトＸ線であり、そして放出されたＸ線
１５は、低真空状態で透明ウィンドー１４を通じてマス
ク１６及びウェハ１８を介し流入される。The electron beam 12 given from the electron source 11 is incident on a predetermined portion of the X-ray target 13, and the incident electron beam 2 reacts with the X-ray target 13, causing the X-ray target 13 to emit X-rays 15. . The X-rays emitted at this time have a wavelength range of 4 to 7 people in a high vacuum state, and are soft X-rays that are easily transmitted. and wafer 18.
上記の過程を経て低真空状態で流入されたソフトＸ線１
５は、マスク１６のパターンによりマスク１６を通過す
るか或いはマスク１６内に吸収され、更に、感光膜１７
を塗布されたウェハ１８の上層に、マスク１６のパター
ンがそのまま再現されている。Soft X-rays 1 injected in a low vacuum state through the above process
5 passes through the mask 16 or is absorbed into the mask 16 by the pattern of the mask 16, and furthermore, the photoresist film 17
The pattern of the mask 16 is reproduced as it is on the upper layer of the wafer 18 coated with.
このようなＸ線リングラフィの画像再現の方法おいて、
サブミクロン単位のパターンを収録されたマスク１６が
、半導体素子パターンの微細性及び精度性と直接的な関
係を持ち、これによりマスクパターンの線幅の寸法及び
欠陥状態を正確に検査する過程は、究極的に、半導体素
子の特性及び生産の歩溜りと密着な関係を持つ。In such an image reproduction method of X-ray phosphorography,
The mask 16 containing submicron patterns has a direct relationship with the fineness and accuracy of the semiconductor device pattern, and the process of accurately inspecting the line width dimension and defect status of the mask pattern is as follows: Ultimately, it has a close relationship with the characteristics of semiconductor devices and production yield.
第２（Ａ）図において、マスク全体を支持するリング状
のフレーム１の上にＸ線を透過させる薄型の透過性基板
２があり、さらにＸ線を遮断するためのＸ線吸収層３が
、所定の形状で配列され、Ｘ線マスクは、その微細なパ
ターンをウェハ上に複写する。しかし、そのウェハ上に
複写する前に、規定された形状及び整列状態を認識し、
さらに規格された線幅の寸法を測定し、次の行程の流れ
の可否を判定するために検査行程を設けなければならな
い。In FIG. 2(A), there is a thin transparent substrate 2 that transmits X-rays on a ring-shaped frame 1 that supports the entire mask, and an X-ray absorption layer 3 that blocks X-rays. Arranged in a predetermined shape, the X-ray mask copies the fine pattern onto the wafer. However, before copying onto the wafer, the defined shape and alignment are recognized and
Furthermore, an inspection process must be provided to measure the standardized line width and determine whether or not the next process is possible.
Ｘ線マスクのパターンの大きさは、０．５μｍｍ以下で
あり、線幅及び欠陥等の検査方法は、電子顕微鏡を利用
される。The size of the pattern of the X-ray mask is 0.5 μmm or less, and an electron microscope is used to inspect line width, defects, etc.
第２（Ｂ）図は、従来のＸ線マスクの電子顕微鏡による
線幅及び欠陥等の検査過程を概略的に図示したものであ
る。このマスクの構成上に次の点に問題がある。即ち、
絶縁体である透過性基板２上にストライプの形状に配列
されたＸ線吸収層３は、例えば金のような金属薄膜から
構成されているので、電子顕微鏡から走査さらた照射電
子線５によって前記Ｘ線吸収層３のパターン周囲に電荷
ｅ−が蓄積される。照射電子線５は、検査中に発生する
このような蓄積電荷ｅ−によって曲げられ、従ってこの
パターンを正確に検査を判断する能力を失なわれる。FIG. 2B schematically illustrates the process of inspecting line widths, defects, etc. of a conventional X-ray mask using an electron microscope. The structure of this mask has the following problems. That is,
The X-ray absorbing layer 3 arranged in a stripe shape on the transparent substrate 2, which is an insulator, is made of a metal thin film such as gold, so that the Charges e- are accumulated around the pattern of the X-ray absorption layer 3. The irradiating electron beam 5 is bent by such accumulated charge e- generated during the inspection and thus loses its ability to accurately judge the inspection of this pattern.
［発明が解決しようとする課題ｌ
しかしながら、マスクの製造工程中或いは使用中に発生
した欠陥等の検出及び除去することが不可能であり、線
幅の寸法を正確に測定することかでかなかった。[Problems to be Solved by the Invention] However, it is impossible to detect and remove defects that occur during the mask manufacturing process or during use, and it is difficult to accurately measure the line width dimension. Ta.
本発明の目的は、電子顕微鏡を利用してＸ線マスクの線
幅の寸法及び欠陥の検査の際に、蓄積電荷ｅ−による検
査判断の不正確性の除去及び究極的には半導体素子の生
産性を高めることができるように構造されたＸ線マスク
を提供することである。It is an object of the present invention to eliminate inaccuracies in inspection judgments due to accumulated charge e- when inspecting the line width dimensions and defects of X-ray masks using an electron microscope, and ultimately to improve the production of semiconductor devices. It is an object of the present invention to provide an X-ray mask structured to enhance the performance of the X-ray mask.
上記の目的を達成するために本発明の特徴的な構成は、
検査過程において、電荷が蓄積される前にそれを除去し
、マスクの透過性基板上に伝導性の金属薄膜を形成した
ものである。In order to achieve the above object, the characteristic configuration of the present invention is as follows:
During the inspection process, the charge is removed before it accumulates, and a conductive metal thin film is formed on the transparent substrate of the mask.
本発明を図面に示す実施例により詳細に説明する。第３
（Ａ）図は、本発明により電荷除去手段を具備したＸ線
マスクの構造を示す。同図において、参照番号１０は、
透過性基板２０を保持するためのフレームであって、耐
久性及び方向的安定度が高く、さらにリング形状の物質
、例えばＳｉ及び硝子から構成される。参照番号２０は
、フレーム１０上に形成され、後に形成されるＸ線吸収
層４０のパターンを維持するのに必要な透過性基板であ
り、さらに、これはＸ線透過率が良い。Ｘ線吸収層４０
とフレーム１０において物理的な特性、例えば熱膨張率
が類似な薄型のＳｉＣ或いはＳｉＮｘ等から構成される
。実際的に、透過性基板２０は、ソフ）Ｘ線を最小限５
０％以上を透過しなければならない。The present invention will be explained in detail with reference to embodiments shown in the drawings. Third
(A) shows the structure of an X-ray mask equipped with charge removal means according to the invention. In the figure, reference number 10 is
The frame is for holding the transparent substrate 20, has high durability and directional stability, and is made of a ring-shaped material such as Si and glass. Reference numeral 20 is a transparent substrate formed on the frame 10 and necessary to maintain the pattern of the X-ray absorbing layer 40 formed later, and furthermore, it has good X-ray transmittance. X-ray absorption layer 40
The frame 10 is made of thin SiC, SiNx, etc., which have similar physical properties, such as a coefficient of thermal expansion. Practically speaking, the transparent substrate 20 is capable of transmitting at least 5
Must transmit 0% or more.
そして、前記透過性基板２０上に所定の厚さで形成され
ている電荷伝導膜３０は、後に形成されるＸ線吸収層４
０に比べてＸ線の吸収層が極めて小さく、さらにこの膜
の金属物質、例えばアルミニウムから構成され、その厚
さは、Ｘ線吸収層４０のほぼ１／１００（約、００５
ｔｔ ｍ）程度である。The charge conductive film 30 formed to a predetermined thickness on the transparent substrate 20 is connected to an X-ray absorbing layer 4 that will be formed later.
The X-ray absorbing layer is extremely small compared to X-ray absorbing layer 40, and furthermore, this film is made of a metal material such as aluminum, and its thickness is approximately 1/100 of the X-ray absorbing layer 40 (approximately 0.05 mm).
ttm).
ここで、特に重要な一つの事項として、Ｘ線吸収層４０
にライディングされた電荷の中で、再結合によって消滅
された電荷を除外した残りの電荷が、継続的にライディ
ングされた電子線に対して静電気妨害を起こさないよう
に電荷伝導膜３０を接地するようにしたものである。Here, one particularly important matter is that the X-ray absorption layer 40
The charge conductive film 30 is grounded so that the remaining charges, excluding the charges erased by recombination, do not cause electrostatic interference to the continuously riding electron beam. This is what I did.
最後に、前記電荷伝導膜３０上にストライブ形状に配列
されたＸ線吸収層４０は、Ｘ線吸収率が良く、原子量も
大きく、かつ厚さも（約０．５μｍ）の金属物質から構
成されて、さらにこれは、Ｘ線を遮断するマスクのパタ
ーンの役目を果たす。即ち 第１図におけるＸ線ターゲ
ット１３がら放出されたソフトＸ線１５の一部は、この
Ｘ線の吸収層４０の部位で吸収され、その残りは、電荷
伝導膜３０と透過性基板４０とを通じて透過されること
によって感光膜１７に塗布されたウェハ１８の上にマス
クのパターンがそのまま再現されるものである。Finally, the X-ray absorption layer 40 arranged in a stripe shape on the charge conductive film 30 is made of a metal material with good X-ray absorption rate, large atomic weight, and thickness (approximately 0.5 μm). Furthermore, this serves as a mask pattern that blocks X-rays. That is, a part of the soft X-rays 15 emitted from the X-ray target 13 in FIG. By transmitting the light, the pattern of the mask is reproduced as it is on the wafer 18 coated on the photoresist film 17.
第３（Ｂ）図は、第３（Ａ）図におけるＸ線マスクが電
子顕微鏡を利用して検査を受ける過程を概略的に図示し
たものである。電子顕微鏡がら走査された照射電子線５
０によってマスクパターンの線幅の寸法及び欠陥等を検
査する。FIG. 3(B) schematically illustrates a process in which the X-ray mask in FIG. 3(A) is inspected using an electron microscope. Irradiated electron beam 5 scanned by an electron microscope
0 to inspect the line width dimension and defects of the mask pattern.
この時、照射電子線５０によってＸ線吸収層４０の周囲
に発生ずる電荷は、蓄積される前に電荷伝導膜３０と再
結合によって消滅され、さらに過剰な電荷は、接地され
る。従って、照射電子線５０は、何の妨害なしに走査部
位を正確に検査することができる。一方、電荷除去手段
を具備した本発明のＸ線マスクの場合に、マスクの厚み
の増加による透過率の減少は無視することができない。At this time, the charges generated around the X-ray absorption layer 40 by the irradiated electron beam 50 are recombined with the charge conductive film 30 and eliminated before being accumulated, and the excess charges are grounded. Therefore, the irradiating electron beam 50 can accurately inspect the scanned region without any interference. On the other hand, in the case of the X-ray mask of the present invention equipped with charge removal means, the decrease in transmittance due to the increase in mask thickness cannot be ignored.
即ち、マスク全体の透過率Ｔｍは、Ｔｍ＝ｅ−” （
ｕ：透過率係数、ｄ：物質の厚さ）
であるので、マスクを構成する各部位に対する透過率を
比較すると、次の通りである。That is, the transmittance Tm of the entire mask is Tm=e-" (
u: transmittance coefficient, d: thickness of material) Therefore, the transmittance of each part of the mask is compared as follows.
透過性基板２０の透過率Ｔ２０は、 Ｔｚｏ−Ｒｅ−２（Ｒ、常数） 電荷伝導膜３０の透過率Ｔ３゜は、 Ｔ、、ｏ＝Ｒｅ Ｘ線吸収層４０の透過率Ｔ４ｏは、 Ｔ４０＝ Ｒ６−＋ｏ。The transmittance T20 of the transparent substrate 20 is Tzo-Re-2 (R, constant) The transmittance T3° of the charge conductive film 30 is T,,o=Re The transmittance T4o of the X-ray absorption layer 40 is T40=R6-+o.
である。It is.
なぜなら、各部位に対する透過係数及び厚さの対応比は
、
Ｔ２゜の透過係数＝１、厚さ＝２とすると、７３Ｇの透
過係数：ｌＯＯ〜２００、厚さ＝１／１００〜１／２０
０であり
Ｔｏｏの透過係数：１００〜２００、厚さ；１〜０．
５
従って、本発明のマスクの変調伝達関数ＭＴＦ （Ｍｏ
ｄｕＩａｔ＋ｏｎ Ｔｒａｎｓｆｅｒ Ｆｕｎｃｔｒｏ
ｎ）が、従来のマスクの変調伝達関数ＭＴＦと比べて劣
らないことが下記の式から分かる。This is because the corresponding ratio of the transmission coefficient and thickness for each part is, assuming that the transmission coefficient of T2° = 1 and the thickness = 2, the transmission coefficient of 73G: lOO ~ 200, thickness = 1/100 ~ 1/20
0, Too's transmission coefficient: 100-200, thickness: 1-0.
5 Therefore, the modulation transfer function MTF (Mo
duIat+on Transfer Functro
It can be seen from the equation below that the modulation transfer function MTF of the conventional mask is not inferior to the modulation transfer function MTF of the conventional mask.
従って、マスクの変調伝達関数ＭＴＦは、上記で述べた
本発明によると、精密度及び微細性の高いマスクのパタ
ーン線幅の寸法或いは＝９
欠陥等を正確に検査、判断することにより、究極的に半
導体素子の信頼度及び生産性を高めることが可能である
。Therefore, according to the present invention described above, the modulation transfer function MTF of the mask can be determined by accurately inspecting and determining the pattern line width of the mask with high precision and fineness, or = 9. It is possible to improve the reliability and productivity of semiconductor devices.
線マスクの線幅及び欠陥検査過程を概略的に示した図、
第３（Ａ）図は、本発明によるＸ線マスクの構造を示し
た断面図、第３（Ｂ）図は、本発明によるＸ線マスクの
電子顕微鏡による線幅及び検査過程を概略的に示した図
である。
図中の参照記号
１０・・・・・・・・・フレーム、１１・・・・・・・
・・電子ソース、１２・・・・・・・・・電子ビーム、
１３・・・・・・Ｘ線ターゲット、１４・・・・・・
透明ウィンドー、１５・・・・・・・・・Ｘ線、１６・
・・・・・・・・Ｘ線マスク、 １７・・・・・・・・
・感光膜、１８・・・・・・・・・ウェハ、 ２０
・・・・・・・・・透過性基板、３０・・・・・・・・
・電荷伝導膜、 ４０・・・・・・・・・Ｘ線吸収層、
５０・・・・・・・・・照射電子線
３（Ａ）図A diagram schematically showing the line width of the line mask and the defect inspection process,
FIG. 3(A) is a sectional view showing the structure of the X-ray mask according to the present invention, and FIG. 3(B) schematically shows the line width and inspection process of the X-ray mask according to the present invention using an electron microscope. This is a diagram. Reference symbols in the figure 10......Frame, 11....
...Electron source, 12......Electron beam,
13...X-ray target, 14...
Transparent window, 15...X-ray, 16.
・・・・・・・・・X-ray mask, 17・・・・・・・・・
・Photoresist film, 18...Wafer, 20
......Transparent substrate, 30...
・Charge conduction film, 40...X-ray absorption layer,
50・・・・・・Irradiation electron beam 3(A) figure
Claims (3)
の上に再現するためのＸ線マスクにおいて、 そのパターンの線幅の寸法及び欠陥等を正 確に検査をするために、マスクの透過性基板２０とＸ線
吸収層４０との間に薄い電荷伝導膜３０を形成して、こ
れを接地することを特徴とするＸ線マスク。(1) In an X-ray mask for reproducing fine images designed in micro units on a semiconductor substrate, the transparent substrate of the mask is used to accurately inspect the line width dimensions and defects of the pattern. 20 and an X-ray absorption layer 40, a thin charge conductive film 30 is formed and this is grounded.
とを特徴とする請求項（１）に記載のＸ線マスク。(2) The X-ray mask according to claim 1, wherein the charge conductive film 30 is made of aluminum.
層４０に対応する厚さの比率が２：（０．０１〜０．０
０５）：（１〜０．５）から構成していることを特徴と
する請求項（１）に記載のＸ線マスク。(3) The thickness ratio of the transparent substrate 20, the charge conductive film 30, and the X-ray absorption layer 40 is 2:(0.01 to 0.0
05): (1 to 0.5).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR89-5232 | 1989-04-20 | ||
| KR1019890005232A KR920010065B1 (en) | 1989-04-20 | 1989-04-20 | X-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02296244A true JPH02296244A (en) | 1990-12-06 |
Family
ID=19285513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1142288A Pending JPH02296244A (en) | 1989-04-20 | 1989-06-06 | X-ray mask |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH02296244A (en) |
| KR (1) | KR920010065B1 (en) |
| GB (1) | GB2233117A (en) |
| NL (1) | NL8901516A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193031A (en) * | 1981-05-22 | 1982-11-27 | Toshiba Corp | Manufacture of mask substrate for exposing x-ray |
| JPS592324A (en) * | 1982-06-28 | 1984-01-07 | Nec Corp | X-ray exposure mask |
| JPS62282432A (en) * | 1986-05-31 | 1987-12-08 | Canon Inc | Mask for x-ray exposure and aligner |
| JPS63299124A (en) * | 1987-05-29 | 1988-12-06 | Hitachi Ltd | X-ray exposure mask |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2279135A1 (en) * | 1974-07-19 | 1976-02-13 | Ibm | METHOD OF MANUFACTURING A MASK FOR X-RAY LITHOGRAPHY |
| US4018938A (en) * | 1975-06-30 | 1977-04-19 | International Business Machines Corporation | Fabrication of high aspect ratio masks |
| US4436797A (en) * | 1982-06-30 | 1984-03-13 | International Business Machines Corporation | X-Ray mask |
| DE3435178A1 (en) * | 1983-09-26 | 1985-04-04 | Canon K.K., Tokio/Tokyo | OBJECT WITH MASK STRUCTURE FOR LITHOGRAPHY |
| DE3338717A1 (en) * | 1983-10-25 | 1985-05-02 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING A X-RAY MASK WITH METAL CARRIER FILM |
-
1989
- 1989-04-20 KR KR1019890005232A patent/KR920010065B1/en not_active IP Right Cessation
- 1989-06-06 JP JP1142288A patent/JPH02296244A/en active Pending
- 1989-06-15 NL NL8901516A patent/NL8901516A/en not_active Application Discontinuation
- 1989-06-29 GB GB8915049A patent/GB2233117A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193031A (en) * | 1981-05-22 | 1982-11-27 | Toshiba Corp | Manufacture of mask substrate for exposing x-ray |
| JPS592324A (en) * | 1982-06-28 | 1984-01-07 | Nec Corp | X-ray exposure mask |
| JPS62282432A (en) * | 1986-05-31 | 1987-12-08 | Canon Inc | Mask for x-ray exposure and aligner |
| JPS63299124A (en) * | 1987-05-29 | 1988-12-06 | Hitachi Ltd | X-ray exposure mask |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920010065B1 (en) | 1992-11-13 |
| KR900017098A (en) | 1990-11-15 |
| GB2233117A (en) | 1991-01-02 |
| NL8901516A (en) | 1990-11-16 |
| GB8915049D0 (en) | 1989-08-23 |
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