JPH02296136A - Method for measuring photoluminescence of compound semiconductor - Google Patents
Method for measuring photoluminescence of compound semiconductorInfo
- Publication number
- JPH02296136A JPH02296136A JP11506189A JP11506189A JPH02296136A JP H02296136 A JPH02296136 A JP H02296136A JP 11506189 A JP11506189 A JP 11506189A JP 11506189 A JP11506189 A JP 11506189A JP H02296136 A JPH02296136 A JP H02296136A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- photoluminescence
- solution
- compound semiconductor
- trichloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005424 photoluminescence Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 27
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000969 carrier Substances 0.000 claims abstract description 10
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 229960002415 trichloroethylene Drugs 0.000 claims abstract description 7
- UBOXGVDOUJQMTN-UHFFFAOYSA-N 1,1,2-trichloroethane Chemical compound ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 7
- 238000000691 measurement method Methods 0.000 claims description 5
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 238000005259 measurement Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- DQCMWCVJSOFDSA-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl.CC(Cl)(Cl)Cl DQCMWCVJSOFDSA-UHFFFAOYSA-N 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
【発明の詳細な説明】
し産業上の利用分野〕
本発明は、半導体試料の性質を調べるホトルミネッセン
ス測定方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photoluminescence measurement method for investigating the properties of a semiconductor sample.
［従来の技術］
ホトルネッセンス測定は半導体の性質を調べるために広
く行なわれている。このＡＦＩ定は、半導体の表面に励
起光を照射することにより励起された表面近傍の半導体
内部のキャリアが再結合する際に放出する光を観Δｐｉ
するものである。[Prior Art] Photoluminescence measurements are widely used to investigate the properties of semiconductors. This AFI constant is calculated by measuring the light emitted when carriers inside the semiconductor near the surface that are excited by irradiating excitation light onto the surface of the semiconductor recombine.
It is something to do.
ホトルミネッセンスの強度は、半導体表面近傍の欠陥と
も関係し、欠陥の数が多いとその強度が弱くなるという
性質がある。The intensity of photoluminescence is also related to defects near the semiconductor surface, and has a property that the intensity decreases as the number of defects increases.
このホトルネッセンス強度の変化を利用してホトミネッ
センスの強度を測定することにより、半導体表面近傍の
欠陥の密度を定性的あるいは半定量的だ求めることが行
われている。例えば、ＧａＡｓウェハーの表面をＣＣｊ
７２°Ｆ２を用いたりアクティブイオンエツチング（Ｒ
Ｉ Ｅ）でエツチングしたとき、その表面でのホトルミ
ネッセンス強度をΔＩＩ７定し、ＲＩＥでエツチングす
る前のホトルミネッセンス強度と比較することにより、
ＲＩＥによりどの程度欠陥が導入されたかについて知見
を得ることができる。By measuring the photoluminescence intensity using this change in photoluminescence intensity, the density of defects near the semiconductor surface can be determined qualitatively or semi-quantitatively. For example, the surface of a GaAs wafer is CCj
Using 72°F2 or active ion etching (R
When etched with IE), the photoluminescence intensity on the surface is determined by ΔII7, and compared with the photoluminescence intensity before etching with RIE,
It is possible to obtain knowledge about the extent to which defects have been introduced by RIE.
従来、ホトルミネッセンスミー１定装置は、光源とチョ
ッパと試料保持器と測定器を含み、光源からの光をチョ
ッピングしながら試料保持器に保持させた試料に直接照
射し、励起されたキャリアが再結合する際に放出する光
を集光し１分光してａ１１定器で測定している。Conventionally, a photoluminescence measurement device includes a light source, a chopper, a sample holder, and a measuring device, and the light from the light source is chopped while directly irradiating the sample held in the sample holder, and the excited carriers are regenerated. The light emitted during the bonding is collected and analyzed for 1 minute using an A11 meter.
［発明が解決しようとする課題］ しかしながら、ホトルミネッセンスの強度は。[Problem to be solved by the invention] However, the intensity of photoluminescence.
表面近傍に存在する欠陥のみならず、不純物の密度、半
導体表面の電子状態にも依存して変化する。It changes depending not only on defects existing near the surface but also on the density of impurities and the electronic state of the semiconductor surface.
そのため、プロセスにより導入される欠陥によるホトル
ミネッセンス強度の変化とそれ以外の要素による強度の
変化を区分する必要がある。Therefore, it is necessary to distinguish between changes in photoluminescence intensity due to defects introduced by the process and changes in intensity due to other factors.
不純物の密度によるホトルミネッセンス強度の変化は、
均一の半導体を用いて比較すれば問題を除去することが
できる。The change in photoluminescence intensity due to impurity density is
The problem can be eliminated by comparing using a uniform semiconductor.
一方、空気中の酸素などにより、半導体表面に酸化膜が
形成されることによる電子状態の変化は。On the other hand, the electronic state changes due to the formation of an oxide film on the semiconductor surface due to oxygen in the air.
ホトルネッセンス強度を減少させ、欠陥によるホトルミ
ネッセンス強度の変化と区別できない。これは、特に、
半導体のキャリア濃度が低い場合にその影響が大きく現
れるものである。このことから、ホトルミネッセンスを
測定する際に、半導体表面を再現性良く酸化膜などのな
い状態にしておくことが望まれている。The photoluminescence intensity decreases and cannot be distinguished from changes in photoluminescence intensity due to defects. This is especially true for
This effect becomes more pronounced when the carrier concentration of the semiconductor is low. For this reason, when measuring photoluminescence, it is desired to keep the semiconductor surface free of oxide films with good reproducibility.
本発明は、前記ホトルミネッセンス測定上の問題点に鑑
み、半導体の表面を再現性良く酸化膜などのない状態に
してホトルミネッセンスを測定する方法を提Ｏ（するこ
とを目的とする。In view of the above-mentioned problems in photoluminescence measurement, it is an object of the present invention to provide a method for measuring photoluminescence while keeping the surface of a semiconductor free of oxide films with good reproducibility.
［課題を解決するための課題］
本発明は化合物半導体試料の表面に励起光を照射して前
記化合物半導体内部のキャリアを励起し。[Problems for Solving the Problems] The present invention irradiates the surface of a compound semiconductor sample with excitation light to excite carriers inside the compound semiconductor.
該励起されたキャリアが再結合する際に放出する光を測
定する化合物半導体のホトルミネットセンスミ１定方法
において、メチルアルコール、三塩化エチレン、三塩化
エタンのうち少なくとも一種類の液体を含む溶媒に塩酸
を溶質として加えた溶液を前記化合物半導体試料表面に
接触させ、前記溶液を通して前記化合物半導体試料表面
に前記励起光を当ててホトルミネッセンスをｎ１定する
ことを特徴とする化合物」′導体のホトルミネッセンス
測定方法。In the photoluminescence sensing method for compound semiconductors, which measures the light emitted when the excited carriers recombine, a solvent containing at least one liquid of methyl alcohol, ethylene trichloride, and ethane trichloride is used. A solution containing hydrochloric acid as a solute is brought into contact with the surface of the compound semiconductor sample, and the excitation light is applied to the surface of the compound semiconductor sample through the solution to determine the photoluminescence of the compound semiconductor. Luminescence measurement method.
［作用］ 化合物゛ト導体試料の表面に、メチルアルコール。[Effect] Methyl alcohol on the surface of the compound conductor sample.
三塩化エチレン、三塩化エタンのうち少なくとも一種類
の液体を含む溶媒に塩酸を溶質として加えた溶液を接触
させて試料表面の酸化膜を除去するとＪ（に、再び表面
が酸化するのを防ぐ。これにより試料の電子状態を一定
に保つ。When the oxide film on the surface of the sample is removed by contacting it with a solution containing at least one liquid of ethylene trichloride or ethane trichloride and hydrochloric acid added as a solute, the surface is prevented from being oxidized again. This keeps the electronic state of the sample constant.
［実施例］ 以下に図面を参照して本発明の詳細な説明する。[Example] The present invention will be described in detail below with reference to the drawings.
第１図に示すホトルミネッセンス測定装置は。The photoluminescence measuring device shown in FIG.
光源１１．光源１１からの光を一定間隔で断続するチョ
ッパ１２．化合物半導体試料（以下、単に試料という）
を保持する試料保ｔ！ｊ器１３．及び放射された光を集
める集光レンズ１４を何している。Light source 11. A chopper 12 that cuts off the light from the light source 11 at regular intervals. Compound semiconductor sample (hereinafter simply referred to as sample)
Hold the sample! J device 13. And what is the condensing lens 14 that collects the emitted light?
更に、このホトルミネッセンス測定装置は、溶液１５を
満たし、試料保持器１３を収めることができる容器１６
を有している。Furthermore, this photoluminescence measuring device includes a container 16 which can be filled with a solution 15 and accommodate a sample holder 13.
have.
試料保持器１３はテフロン等の耐化学薬品性の材料から
なり、また、容器１６は光を透過する材料１例えば石英
からなる。The sample holder 13 is made of a chemical-resistant material such as Teflon, and the container 16 is made of a light-transmissive material 1, such as quartz.
容器１６内の溶液１５は、メチルアルコール。The solution 15 in the container 16 is methyl alcohol.
三塩化エチレン、三塩化メタンのうち少なくとも一種類
の液体を含む溶媒に塩酸を溶質として加えたものである
。特に上記三種類の液体を混合した液体を溶媒とするか
、または、三種類の液体のうち一種類の液体のみを溶媒
として用いることが好ましい。Hydrochloric acid is added as a solute to a solvent containing at least one liquid of ethylene trichloride and methane trichloride. In particular, it is preferable to use a mixture of the above three types of liquids as the solvent, or to use only one type of liquid among the three types of liquids as the solvent.
なお、集光された放射光を分光する分光器と。In addition, it is a spectrometer that separates the collected synchrotron radiation.
分光器からの光を測定する測定器は図示を省略する。A measuring device for measuring light from the spectrometer is not shown.
第１図のホトルミネッセンス１１−１定装置を用いた本
発明の測定方法を以下に説明する。The measurement method of the present invention using the photoluminescence 11-1 constant apparatus shown in FIG. 1 will be explained below.
まず、試料保持器１３に試料１７を取り付ける。First, the sample 17 is attached to the sample holder 13.
次に、試料保持器１３を容器１６内に収め、試料１７が
溶液１５に浸るようにする。これで試料１７表面に溶液
１５を接触させたことになる。Next, the sample holder 13 is placed in the container 16 so that the sample 17 is immersed in the solution 15. This means that the solution 15 has come into contact with the surface of the sample 17.
後は従来同様１光源１１からの励起光をチョッパ１２で
断続しながら試料１７に照射してキャリアを励起し、キ
ャリアが再結合することによる試料から放射された光を
集光レンズ１４により収束させ、収束した光を分光器（
図示せず）で分光してホトルミネッセンスを計１定する
。After that, as in the conventional method, the sample 17 is irradiated with excitation light from one light source 11 intermittently by the chopper 12 to excite the carriers, and the light emitted from the sample due to the recombination of the carriers is focused by the condenser lens 14. , the converged light is passed through a spectrometer (
(not shown) to determine the total photoluminescence.
このように、試料１７の表面が溶液１５に接触した状、
ｆｆ！でホトルミネッセンスのＡｐＥ定を行うと。In this way, the surface of the sample 17 is in contact with the solution 15,
ff! When performing ApE determination of photoluminescence.
極めてゆっくりした速度で試料１７の表面が溶解する。The surface of sample 17 dissolves at a very slow rate.
即ち、試料１７の表面に形成された酸化膜か除去され、
その後、再び酸化膜が形成されるのを防１トする。この
ことにより、試料１７の電子状態を一定に保つことがで
きる。That is, the oxide film formed on the surface of the sample 17 is removed,
Thereafter, the formation of an oxide film again is prevented. This allows the electronic state of the sample 17 to be kept constant.
実験には第２図に示す化合物半導体試料を用いた。この
試料は（００１）方位のＳｔドープｎ型ＧａＡｓ基板２
１上に、ＭＯＣＶＤ法によりアンドープＧａＡｓ層２２
（厚さ３．３ ｕｓ ） 、アンドープＡｇｕ、ｓ Ｇ
ａ ｏ５Ａ ｓ層２３（厚さ０．５８／１ｍ）を連続
して成長したものである。A compound semiconductor sample shown in FIG. 2 was used in the experiment. This sample is a (001) oriented St-doped n-type GaAs substrate 2.
1, an undoped GaAs layer 22 is formed by MOCVD.
(thickness 3.3 us), undoped Agu, s G
The ao5A s layer 23 (thickness: 0.58/1 m) is continuously grown.
この試料の表面の一部に耐酸性ワックス（アビニシンワ
ックス）を塗／ｌｉ して保護膜を形成し、保護膜を形
成しなかった部分のＡｊ７ＧａＡｓ層２３を弗化水素（
ＨＦ）によってエツチングし、ＧａＡｓ層２２を露出さ
せた。そして露出させたＧａＡｓ層２２のホトルミネッ
センス強度の時間経過による変化を調べた。A part of the surface of this sample was coated with acid-resistant wax (abinisine wax) to form a protective film, and the parts of the Aj7GaAs layer 23 on which the protective film was not formed were coated with hydrogen fluoride (
HF) to expose the GaAs layer 22. Changes in the photoluminescence intensity of the exposed GaAs layer 22 over time were then investigated.
光源には、Ｈｅ−Ｎｅレーザを用い、波長６３２゜８ｎ
ｍ 、出力６ｍＷ、 ビーム径２００μｓ、チョッピ
ング周波数７００Ｈｚの光を使用した。A He-Ne laser is used as the light source, with a wavelength of 632°8n.
Light was used with an output of 6 mW, a beam diameter of 200 μs, and a chopping frequency of 700 Hz.
ＧａＡｓのホトルミネッセンス強度は波長８７２ｒｖの
ところにピークを持っているので 波長８７２ｎｍの放
射光のＡＩ定を行なった。Since the photoluminescence intensity of GaAs has a peak at a wavelength of 872 rv, AI determination was performed for the emitted light at a wavelength of 872 nm.
■実施例１
メチルアルコールにＨＣｇをＯ，Ｏｌｖ ｏ ｐ ９６
加えた溶液を容器に満たし、試料を浸してＣｊ定した結
果を第３図に示す。■Example 1 HCg in methyl alcohol O, Olv o p 96
Figure 3 shows the results of determining Cj by filling a container with the added solution and immersing the sample.
第３図に示すように７Ｉｐ＋定場所によってホトルミネ
ッセンス強度に少し差はあるが時間による変化は見られ
ない。As shown in FIG. 3, there are slight differences in photoluminescence intensity depending on the location of 7Ip+, but no change over time is observed.
■実施例２
メチルアルコールに、ＨＣｇをメチルアルコールに対し
０．００１ ｖ ｏ １％加えた溶液に試料を浸して測
定を行なった。その結果、実施例１と同様に時間による
変化は見られなかった。Example 2 A sample was immersed in a solution in which 0.001 vol. 1% of HCg was added to the methyl alcohol to perform measurements. As a result, as in Example 1, no change over time was observed.
■実施例３
三塩化エタン（トリクロロエタン）にＩＣ，Ｑを０．１
ｖｏＩ９６加えた溶液に試料を浸して測定を行なった。■Example 3 IC, Q is 0.1 in trichloroethane (trichloroethane)
Measurements were performed by immersing the sample in a solution containing voI96.
その結果、実施例１．２と同様に時間的変化は見られな
かった。As a result, no temporal change was observed as in Example 1.2.
■実施例４
三塩化エチレン（トリクロロエチレン）にＩＣｇをＯ，
Ｉｖｏ、ｌｌ）９ｏ加えた溶液に試料を浸して測定を行
なった。結果は実施例１，２及び３と同様。■Example 4 Add ICg to trichlorethylene (trichlorethylene) in O,
The measurement was carried out by immersing the sample in a solution containing 90% of the sample. The results are the same as in Examples 1, 2 and 3.
時間的変化はみられなかった。No temporal changes were observed.
■比較例１
従来のＵｌｌ定法法即ち試料を大気に曝したままΔｐ＋
定を行なった。その結果を第４図に示す。その結果、５
分経過後にはホトルミネッセンス強度は６０％に減少し
、１ケ月以上経過すると１％以下になった。■Comparative Example 1 Conventional Ull standard method, Δp+ while the sample is exposed to the atmosphere.
I made a decision. The results are shown in FIG. As a result, 5
After minutes, the photoluminescence intensity decreased to 60%, and after more than a month, it decreased to less than 1%.
なお１表面にＡｇＧａＡｓ層が存在するＧａＡＳのホト
ルミネッセンス強度の時間変化は見られなかった。Note that no change over time in the photoluminescence intensity of GaAS having an AgGaAs layer on its surface was observed.
■比較例２
０、 ｌ ｖ ｏ ４７９６のＨＣΩ水溶液に試料を浸
してＡ１１ｊ定した。結果を第５図に示す。■Comparative Example 2 A sample was immersed in an HCΩ aqueous solution of 0.0, lvo 4796 to determine A11j. The results are shown in Figure 5.
ＨＣＩの水溶液を用いると大気中でΔＩＩＪ定したのと
同様にホトルミネッセンス強度は時間経過に伴ない減少
している。また、比較例１と同様、ＡｇＧａＡｓ層を表
面に存するＧａＡｓのホトルミネッセンス強度は変化し
なかった。When an aqueous solution of HCI is used, the photoluminescence intensity decreases over time, similar to when ΔIIJ was determined in the atmosphere. Further, as in Comparative Example 1, the photoluminescence intensity of GaAs having an AgGaAs layer on the surface did not change.
以上のａＦ１定結果から明らかなように本発明の１９＋
定方法を用いるとホトルミネッセンス強度は時間とは無
関係に一定である。即ち、試料の表面は酸化膜のない状
態に保たれ、電子状態は一定である。As is clear from the above aF1 determination results, the 19+ of the present invention
Using the fixed method, the photoluminescence intensity is constant regardless of time. That is, the surface of the sample is kept free of oxide film, and the electronic state is constant.
なお１本発明はホトルミネッセンスを測定する試料とし
てＧａＡｓに限定するものではなく１本発明の主旨に基
づく種々の材料に適用することができる。本発明の主旨
は、被測定物質の表面にできる酸化膜等を除去しながら
、安定したホトルミネッセンスをΔｐｊ定する方法を提
供するものである。Note that the present invention is not limited to GaAs as a sample for measuring photoluminescence, but can be applied to various materials based on the gist of the present invention. The gist of the present invention is to provide a method for stably determining Δpj of photoluminescence while removing an oxide film or the like formed on the surface of a substance to be measured.
このことから、ＡＩ ＧａＡｓ、Ｉ ｎＧａＡｓ、Ｇａ
ＡｓＰ、ＡｌＧａＰ、ＡＤ ＩｎＰ、ＩｎＡＪ７Ａｓ、
Ｇａ１ｎＰなどの三元混晶半導体、ＩｎＧａＡｓＰ、Ｉ
ｎＡｇＡｓＰなどの四元混晶半導体にも適用できる。二
元化合物半導体としてＧａＡｓ以外にＡｐ Ａｓ、ＡＩ
Ｐなど広く適用できることは言うまでもない。From this, AI GaAs, InGaAs, Ga
AsP, AlGaP, AD InP, InAJ7As,
Ternary mixed crystal semiconductors such as Ga1nP, InGaAsP, I
It can also be applied to quaternary mixed crystal semiconductors such as nAgAsP. In addition to GaAs, Ap As and AI are used as binary compound semiconductors.
Needless to say, this method can be widely applied to P, etc.
し発明の効果］
本発明によれば、メチルアルコール、三塩化エチレン、
三塩化エタンのうち少なくとも一種類の液体を含む溶媒
に塩酸を溶質として加えた溶液を化合物半導体試料表面
に接触させ、前記溶液を通して試料に励起光を当ててホ
トルミネッセンススペクトルを測定するようにしたこと
で、試料表面を酸化膜のない状態に保つことができる。Effect of the invention] According to the invention, methyl alcohol, ethylene trichloride,
A solution prepared by adding hydrochloric acid as a solute to a solvent containing at least one liquid of trichlorethane is brought into contact with the surface of a compound semiconductor sample, and excitation light is applied to the sample through the solution to measure a photoluminescence spectrum. This allows the sample surface to be kept free of oxide films.
【図面の簡単な説明】
第１図は本発明のホトルミネッセンス測定方法に用いら
れるホトルミネッセンスｎ１定装置の概略図、第２図は
本発明の実施例及び比較例に用いた試料の構造図、第３
図〜第５図はホトルミネッセンス測定の結果を示すグラ
フであってそれぞれ。
実施例１．比較例１．比較例２の測定結果を示すグラフ
である。
１１・・・光源、１２・・・チョッパ、１３・・・試料
保持器、１４・・・集光レンズ、１５・・・溶液、１６
・・・容器。
１７・・・試料、２１・・・ｎ型ＧａＡｓ基板、２２・
・・ＧａＡｓ層、２３−ＡＭ ＧａＡｓ層。
第３図
第４図
第５図[Brief Description of the Drawings] Figure 1 is a schematic diagram of a photoluminescence n1 constant device used in the photoluminescence measurement method of the present invention, Figure 2 is a structural diagram of samples used in Examples and Comparative Examples of the present invention, Third
5 to 5 are graphs showing the results of photoluminescence measurements, respectively. Example 1. Comparative example 1. 7 is a graph showing the measurement results of Comparative Example 2. DESCRIPTION OF SYMBOLS 11... Light source, 12... Chopper, 13... Sample holder, 14... Condensing lens, 15... Solution, 16
···container. 17... Sample, 21... N-type GaAs substrate, 22...
...GaAs layer, 23-AM GaAs layer. Figure 3 Figure 4 Figure 5
Claims (1)
合物半導体内部のキャリアを励起し、該励起されたキャ
リアが再結合する際に放出するホトルミネッセンスを測
定する化合物半導体のホトルミネッセンス測定方法にお
いて、 メチルアルコール、三塩化エチレン、三塩化エタンのう
ち少なくとも一種類の液体を含む溶媒に塩酸を溶質とし
て加えた溶液を前記化合物半導体試料表面に接触させ、
前記溶液を通して前記化合物半導体試料表面に前記励起
光を当ててホトルミネッセンスを測定することを特徴と
する化合物半導体のホトルミネッセンス測定方法。[Claims] 1. A compound semiconductor in which the surface of a compound semiconductor sample is irradiated with excitation light to excite carriers inside the compound semiconductor, and photoluminescence emitted when the excited carriers recombine is measured. In the photoluminescence measurement method, a solution obtained by adding hydrochloric acid as a solute to a solvent containing at least one liquid of methyl alcohol, ethylene trichloride, and ethane trichloride is brought into contact with the surface of the compound semiconductor sample,
A method for measuring photoluminescence of a compound semiconductor, comprising measuring photoluminescence by applying the excitation light to the surface of the compound semiconductor sample through the solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11506189A JPH02296136A (en) | 1989-05-10 | 1989-05-10 | Method for measuring photoluminescence of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11506189A JPH02296136A (en) | 1989-05-10 | 1989-05-10 | Method for measuring photoluminescence of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02296136A true JPH02296136A (en) | 1990-12-06 |
Family
ID=14653207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11506189A Pending JPH02296136A (en) | 1989-05-10 | 1989-05-10 | Method for measuring photoluminescence of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02296136A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008210947A (en) * | 2007-02-26 | 2008-09-11 | Japan Aerospace Exploration Agency | Evaluation method of semiconductor substrate |
-
1989
- 1989-05-10 JP JP11506189A patent/JPH02296136A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008210947A (en) * | 2007-02-26 | 2008-09-11 | Japan Aerospace Exploration Agency | Evaluation method of semiconductor substrate |
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