JPH02295117A - Method of patterning thin film of copper - Google Patents
Method of patterning thin film of copperInfo
- Publication number
- JPH02295117A JPH02295117A JP11496889A JP11496889A JPH02295117A JP H02295117 A JPH02295117 A JP H02295117A JP 11496889 A JP11496889 A JP 11496889A JP 11496889 A JP11496889 A JP 11496889A JP H02295117 A JPH02295117 A JP H02295117A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- mask
- thin film
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 238000000059 patterning Methods 0.000 title claims description 16
- 239000007789 gas Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 8
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000000992 sputter etching Methods 0.000 abstract description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract description 2
- 238000004528 spin coating Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Magnetic Heads (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体、薄膜を用いたデバイス、例えば薄膜
磁気ヘッド、薄膜トランス等において、その一部にＣｕ
を使用したパタンを含む場合、高精度でパターニングを
行う銅薄膜パターニング方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention is directed to devices using semiconductors and thin films, such as thin film magnetic heads, thin film transformers, etc.
This invention relates to a copper thin film patterning method that performs patterning with high accuracy when the pattern includes a pattern using a copper film.
（従来の技術）
従来、薄膜デバイスの一部にＣｕ膜を使用して、これを
パターニングして所望のＣｕバタンを得ようとする場合
、そのパターニング方法には（１）電気めっき法、（２
）リフトオフ法、 （３）反応製イオンエッチング法な
どがある。しかし（１）は導電性を付与するためにあら
かじめ形成してある導体薄膜を除去する必要があること
、（２）はバタン崩れが起こること、 （３）はＣｕと
マスクとのエッチング選択比が小さい（２０程度）こと
など、Ｃｕ膜厚が３〜１０μｍの厚い膜の微細パタンを
高精度でパターニングすることができないという欠点が
あった。(Prior Art) Conventionally, when attempting to obtain a desired Cu pattern by using a Cu film as a part of a thin film device, the patterning methods include (1) electroplating, (2)
) Lift-off method, (3) Reactive ion etching method, etc. However, (1) it is necessary to remove the conductor thin film that has been formed in advance to impart conductivity, (2) it causes collapse, and (3) the etching selectivity between Cu and the mask is low. There was a drawback that it was not possible to pattern a fine pattern of a thick Cu film with a thickness of 3 to 10 μm with high precision, such as being small (about 20 μm).
（発明が解決しようとする課題）
本発明は、薄膜デバイスにおけるＣｕパタンの形成を高
精度、かつ効率的に行う銅薄膜パターニング方法を提供
することにある。(Problems to be Solved by the Invention) An object of the present invention is to provide a copper thin film patterning method for forming a Cu pattern in a thin film device with high precision and efficiency.
（課題を解決するための手段）
本発明の銅薄膜パターニング方法は、Ｃｕパタンを金属
マスクを用いたイオンエッチングで形成するにあたり、
マスク材としてＴａ， ＮｂまたはＺｒを用い、このマ
スクを利用してＣｕをパターニングする際に、動作ガス
として窒素と水素との混合ガスまたは窒素とアンモニア
との混合ガスを使う。(Means for Solving the Problems) The copper thin film patterning method of the present invention includes the following steps when forming a Cu pattern by ion etching using a metal mask.
Ta, Nb, or Zr is used as a mask material, and when patterning Cu using this mask, a mixed gas of nitrogen and hydrogen or a mixed gas of nitrogen and ammonia is used as an operating gas.
従来、薄膜デバイスのＣｕパタンの形成には、前述のよ
うに、電気めっき法を用いるか、リフト法を用いるか、
金属マスクを用いてＣｕとの工・ンチング選択比を利用
した反応性イオンエッチングによるか、いずれかの方法
が採用されていた。反応性イオンエッチングの動作ガス
には、Ａｒと酸素の混合ガスのほか、ハロゲン系のガス
を使うことも可能であるが、毒性や被加工材の温度を上
げねばならないなどの欠点があった。また、高アスペク
ト比のＣｕバタンの場合、従来の方法では高精度のパタ
ーニングが困難であった。Conventionally, Cu patterns for thin film devices have been formed using either electroplating or lift methods, as described above.
Either a reactive ion etching method using a metal mask and a selective ratio between etching and etching with respect to Cu has been adopted. In addition to a mixed gas of Ar and oxygen, halogen-based gases can also be used as the operating gas for reactive ion etching, but these have drawbacks such as toxicity and the need to raise the temperature of the workpiece. Furthermore, in the case of a Cu baton with a high aspect ratio, it is difficult to pattern it with high precision using conventional methods.
（実施例）
第１図は、本発明によるＣｕとＴａの工・ノチング速度
とイオン加速電圧との関係を示す図である。エッチング
はカウフマン型イオンビームエ・冫チング装置で行った
。第１図は、エッチングガスに窒素：アンモニア（２
： １）の混合ガスを用い、動作ガス圧Ｉ Ｘ １０−
’Ｔｏｒｒとしたときのエッチング速度のイオン加速
電圧依存性を示している。この図からＣｕは加速電圧が
上がるにつれてエッチング速度は増加傾向を示すが、こ
れに対しＴａはほとんどエッチングされないことがわか
った。またイオン加速電圧を３００■とした場合、Ｃｕ
とＴａとのエッチング速度比が５０以上得られることか
ら、Ｔａをマスクに使えばマスクを薄くできるので、高
精度のパターニングおよび高アスペクト比のＣｕのパタ
ーニングが可能であることがわかった。これは窒素とア
ンモニアとの混合ガスを用いることで、Ｃｕは混合ガス
との反応が進むのに対して、Ｔａは耐食性が優れている
ためである。この実施例では基板温度は室温で行ったが
、反応性を高めるために２００〜３００ ’Ｃで行えば
、さらにエッチング特性が向上することは明らかである
。(Example) FIG. 1 is a diagram showing the relationship between the etching/notching speed of Cu and Ta and the ion accelerating voltage according to the present invention. Etching was performed using a Kaufman type ion beam etching device. Figure 1 shows that the etching gas is nitrogen:ammonia (2
: Using the mixed gas of 1), the operating gas pressure is I x 10-
It shows the dependence of the etching rate on the ion acceleration voltage when set to 'Torr. This figure shows that the etching rate of Cu tends to increase as the accelerating voltage increases, but on the other hand, Ta is hardly etched. Moreover, when the ion acceleration voltage is 300■, Cu
Since an etching rate ratio of 50 or more between Ta and Ta was obtained, it was found that if Ta is used as a mask, the mask can be made thinner, so that highly accurate patterning and patterning of Cu with a high aspect ratio are possible. This is because by using a mixed gas of nitrogen and ammonia, the reaction of Cu with the mixed gas progresses, whereas Ta has excellent corrosion resistance. In this example, the substrate temperature was room temperature, but it is clear that etching characteristics can be further improved if the substrate temperature is 200 to 300'C to increase reactivity.
第２図（ａ）〜（ｄ）は本発明の反応性イオンビームエ
ッチングによる薄膜磁気ヘッド用Ｃｕコイルのパターニ
ングの工程を示す図である。第２図において、１はコイ
ル形状のホトレジストマスク、２はＴａ膜、３はＣｕ膜
、４はスライダに用いるアルチック基板である。まず厚
さ５μｍのＣｕ膜、厚さ０．１μｍ以下のＴａ膜をイオ
ンビームスパツタで形成した後、厚さ０．５μｍのホト
レジストＡＺ１３５０ （商品名）をスピンコートして
キュアする。その後、コイル形状のマスク１で露光、現
像した（第２図（ａ））。FIGS. 2(a) to 2(d) are diagrams showing the process of patterning a Cu coil for a thin film magnetic head by reactive ion beam etching according to the present invention. In FIG. 2, 1 is a coil-shaped photoresist mask, 2 is a Ta film, 3 is a Cu film, and 4 is an AlTiC substrate used for a slider. First, a Cu film with a thickness of 5 μm and a Ta film with a thickness of 0.1 μm or less are formed by ion beam sputtering, and then a photoresist AZ1350 (trade name) with a thickness of 0.5 μm is spin coated and cured. Thereafter, exposure and development were performed using a coil-shaped mask 1 (FIG. 2(a)).
さらにその後、このホトレジストパクンをマスクとして
、動作ガスにＡｒを用いイオンエッチングでＴａ膜をコ
イル形状にパターニングする（第２図（ｂ））．このＴ
ａ膜をマスク２２として使用し（第２図（Ｃ））、エッ
チングガスに窒素とアンモニアとの混合ガスを用いて、
Ｃｕ膜を反応性イオンビームエッチングし、所望のＣｕ
コイルパタン３３を得た（第２図（ｄ））。Thereafter, using this photoresist mask as a mask, the Ta film is patterned into a coil shape by ion etching using Ar as an operating gas (FIG. 2(b)). This T
Using the a film as a mask 22 (FIG. 2 (C)) and using a mixed gas of nitrogen and ammonia as the etching gas,
The Cu film is reactive ion beam etched to form the desired Cu film.
A coil pattern 33 was obtained (FIG. 2(d)).
この方法によれば、従来見られたＣｕ側壁面へのエッチ
ング生成物の再付着がない、しかも側壁の基板に対する
角度８５度以上の切れのよいコイルパクンが得られた。According to this method, there was no redeposition of etching products to the Cu side wall surface, which was observed in the past, and a well-cut coil crack with an angle of 85 degrees or more between the side wall and the substrate was obtained.
また、コイル間隔ｌｔＩｍ、コイル幅１ ｐ ｍ 、コ
イル高さ５μｍの高アスベクト比の微細パタンにおいて
も、高精度のパターニングを行うことができることがわ
かった。上記の例では、Ｃｕパタンの形成にＴａ膜をマ
スクに用．いたが、エッチングガスに窒素とアンモニア
ガスとの混合ガスを使用した場合、Ｃｕに対して５０以
上の選択比が得られるマスク材として、Ｎｂ＋ Ｚｒが
あり、これらをマスク材として用いた場合にも同等の効
果が得られること、さらに窒素と水素との混合ガスをエ
ッチングガスとして使用した場合でも、エッチング速度
は低下するが、エッチング選択比は５０以上得られるこ
とがわかった。It was also found that highly accurate patterning can be performed even in a fine pattern with a high aspect ratio of a coil spacing ltIm, a coil width of 1 pm, and a coil height of 5 μm. In the above example, a Ta film is used as a mask to form a Cu pattern. However, when a mixed gas of nitrogen and ammonia gas is used as the etching gas, Nb + Zr is a mask material that can obtain a selectivity of 50 or more with respect to Cu, and even when these are used as a mask material, It was found that the same effect can be obtained, and that even when a mixed gas of nitrogen and hydrogen is used as the etching gas, an etching selectivity of 50 or more can be obtained, although the etching rate decreases.
（発明の効果）
以上述べたように、本発明の銅薄膜パターニング方法に
よれば、動作ガスに窒素と水素との混合ガスまたは窒素
とアンモニアガスを用いてＣｕ膜をパターニングする際
、マスク材にＴａ， ＮｂまたはＺｒのようにＣｕ膜に
対して５０以上の高いエッチング選択比が得られる材料
を用いれば、急峻なバタン側面角が得られるので、高ア
スペクト比、高精度のＣｕパタンか容易に得られる。こ
の技術を用いれば、薄膜磁気ヘッド、薄膜トランス、そ
のほか半導体デバイスにおける配線にも低抵抗のＣｕ膜
を用いることができ、薄膜デバイスの適用分野が広がる
という効果がある。(Effects of the Invention) As described above, according to the copper thin film patterning method of the present invention, when patterning a Cu film using a mixed gas of nitrogen and hydrogen or nitrogen and ammonia gas as the operating gas, the mask material By using a material such as Ta, Nb, or Zr that has a high etching selectivity of 50 or more with respect to the Cu film, a steep side angle can be obtained, making it easy to create a high aspect ratio, high precision Cu pattern. can get. If this technology is used, a low-resistance Cu film can be used for wiring in thin-film magnetic heads, thin-film transformers, and other semiconductor devices, which has the effect of expanding the field of application of thin-film devices.
第１図は本発明によるＣｕとＴａのエッチング速度とイ
オン加速電圧七の関係を示す図、
第２図（ａ）〜（ｄ）は本発明の反応性イオンビームエ
ッチングによる薄膜磁気ヘッド用Ｃｕコイルのパターニ
ングの工程を示す図である。
１・・・コイル形状のホトレジストマスク２・・・Ｔａ
膜 ３・・・Ｃｕ膜４・・・基板
２２・・・Ｔａマスク３３・・・Ｃｕコイルバタ
ン
特許出願人 日本電信電話株式会社代理人弁理士
杉 村 暁 秀同Fig. 1 is a diagram showing the relationship between the etching rate of Cu and Ta and the ion acceleration voltage according to the present invention, and Fig. 2 (a) to (d) are Cu coils for thin film magnetic heads produced by reactive ion beam etching according to the present invention. FIG. 3 is a diagram showing the patterning process of FIG. 1... Coil-shaped photoresist mask 2... Ta
Film 3...Cu film 4...Substrate
22...Ta mask 33...Cu coil baton Patent applicant Nippon Telegraph and Telephone Corporation representative patent attorney
Hidetoshi Sugimura
Claims (1)
を用いて作製されるＣｕのコイル、配線等を含む薄膜デ
バイスにおいて、Ｃｕ膜をパターニングする際に、マス
ク材にＴａ、ＮｂまたはＺｒ（７）薄膜を用い、動作ガ
スに窒素と水素との混合ガスもしくは窒素とアンモニア
との混合ガスを用いて、イオンビームエッチングで加工
することを特徴とする銅薄膜パターニング方法。1. When patterning a Cu film in a thin film device including a Cu coil, wiring, etc. produced using photolithography technology and dry etching technology, a Ta, Nb or Zr (7) thin film is used as a mask material. A copper thin film patterning method characterized by processing by ion beam etching using a mixed gas of nitrogen and hydrogen or a mixed gas of nitrogen and ammonia as an operating gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11496889A JP2732663B2 (en) | 1989-05-10 | 1989-05-10 | Copper thin film patterning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11496889A JP2732663B2 (en) | 1989-05-10 | 1989-05-10 | Copper thin film patterning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02295117A true JPH02295117A (en) | 1990-12-06 |
| JP2732663B2 JP2732663B2 (en) | 1998-03-30 |
Family
ID=14651088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11496889A Expired - Fee Related JP2732663B2 (en) | 1989-05-10 | 1989-05-10 | Copper thin film patterning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2732663B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472724A (en) * | 1990-07-13 | 1992-03-06 | Sony Corp | Dryetching process |
| US6008140A (en) * | 1997-08-13 | 1999-12-28 | Applied Materials, Inc. | Copper etch using HCI and HBr chemistry |
| US6080529A (en) * | 1997-12-12 | 2000-06-27 | Applied Materials, Inc. | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures |
| US6331380B1 (en) | 1997-12-12 | 2001-12-18 | Applied Materials, Inc. | Method of pattern etching a low K dielectric layer |
| WO2003019629A3 (en) * | 2001-08-27 | 2003-11-20 | Nptest Inc | Process for charged particle beam micro-machining of copper |
| US6804879B2 (en) * | 2002-10-23 | 2004-10-19 | Hitachi Global Storage Technologies Netherlands, B.V. | Method of fabricating a magnetic transducer with a write head having a multi-layer coil |
| US7024756B2 (en) * | 2003-07-30 | 2006-04-11 | Hitachi Global Storage Technologies Netherlands, B.V. | Method of making a perpendicular recording magnetic head pole tip with an etchable adhesion CMP stop layer |
| US7060196B2 (en) | 2003-10-03 | 2006-06-13 | Credence Systems Corporation | FIB milling of copper over organic dielectrics |
| WO2018088532A1 (en) * | 2016-11-10 | 2018-05-17 | 東京エレクトロン株式会社 | Etching device and etching method |
-
1989
- 1989-05-10 JP JP11496889A patent/JP2732663B2/en not_active Expired - Fee Related
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472724A (en) * | 1990-07-13 | 1992-03-06 | Sony Corp | Dryetching process |
| US6489247B1 (en) | 1997-08-13 | 2002-12-03 | Applied Materials, Inc. | Copper etch using HCl and HBR chemistry |
| US6008140A (en) * | 1997-08-13 | 1999-12-28 | Applied Materials, Inc. | Copper etch using HCI and HBr chemistry |
| US6534416B1 (en) | 1997-08-13 | 2003-03-18 | Applied Materials Inc. | Control of patterned etching in semiconductor features |
| US6331380B1 (en) | 1997-12-12 | 2001-12-18 | Applied Materials, Inc. | Method of pattern etching a low K dielectric layer |
| US6458516B1 (en) | 1997-12-12 | 2002-10-01 | Applied Materials Inc. | Method of etching dielectric layers using a removable hardmask |
| US6080529A (en) * | 1997-12-12 | 2000-06-27 | Applied Materials, Inc. | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures |
| WO2003019629A3 (en) * | 2001-08-27 | 2003-11-20 | Nptest Inc | Process for charged particle beam micro-machining of copper |
| US6824655B2 (en) | 2001-08-27 | 2004-11-30 | Credence Systems Corporation | Process for charged particle beam micro-machining of copper |
| US6804879B2 (en) * | 2002-10-23 | 2004-10-19 | Hitachi Global Storage Technologies Netherlands, B.V. | Method of fabricating a magnetic transducer with a write head having a multi-layer coil |
| US7024756B2 (en) * | 2003-07-30 | 2006-04-11 | Hitachi Global Storage Technologies Netherlands, B.V. | Method of making a perpendicular recording magnetic head pole tip with an etchable adhesion CMP stop layer |
| US7060196B2 (en) | 2003-10-03 | 2006-06-13 | Credence Systems Corporation | FIB milling of copper over organic dielectrics |
| US7883630B2 (en) | 2003-10-03 | 2011-02-08 | Dcg Systems, Inc. | FIB milling of copper over organic dielectrics |
| WO2018088532A1 (en) * | 2016-11-10 | 2018-05-17 | 東京エレクトロン株式会社 | Etching device and etching method |
| JPWO2018088532A1 (en) * | 2016-11-10 | 2019-10-10 | 東京エレクトロン株式会社 | Etching apparatus and etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2732663B2 (en) | 1998-03-30 |
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