JPH02293629A - Liquid level gage for semiconductor wet process device - Google Patents

Liquid level gage for semiconductor wet process device

Info

Publication number
JPH02293629A
JPH02293629A JP11631689A JP11631689A JPH02293629A JP H02293629 A JPH02293629 A JP H02293629A JP 11631689 A JP11631689 A JP 11631689A JP 11631689 A JP11631689 A JP 11631689A JP H02293629 A JPH02293629 A JP H02293629A
Authority
JP
Japan
Prior art keywords
liquid
strain
temp
current change
liquid level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11631689A
Other languages
Japanese (ja)
Inventor
Naoya Ito
直也 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP11631689A priority Critical patent/JPH02293629A/en
Publication of JPH02293629A publication Critical patent/JPH02293629A/en
Pending legal-status Critical Current

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Landscapes

  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To make the level measurement of liquid without contaminating wafers by providing a detecting part for the strain quantity by a liquid weight and a liquid temp. measuring part in the outside bottom of the semiconductor wet process device and correcting the measured strain quantity with the measured liquid temp. CONSTITUTION:The weight of the processing liquid 5 in a processing tank 4 changes and the strain in the bottom of the tank 4 changes when the level of the liquid 5 changes. This change is converted to a current change by a strain gage 6. A temp. measuring body 7 of the temp. measuring part 2, which is stuck to the outside bottom of the tank 4, converts the temp. change to a current change. The current change of the strain gage 6 is detected by a strain gage current change detecting circuit 9 and is converted to the voltage corresponding to the strain quantity. The current change of the temp. measuring body 7 is detected by a measuring body current change detecting circuit 8 and is converted to the voltage corresponding to the temp. strain quantity. The voltage signal by the detecting circuit 8 is subtracted from the voltage signal by the detecting circuit 9 to form the voltage signal equiv. to the strain quantity corresponding to the volume of the treating liquid in a temp. correcting circuit 10. This voltage signal is converted to a liquid level height in a liquid level computing circuit 11. The result thereof is displayed in a display section 12 and is outputted from an external output circuit 13 to an external device.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェット処理装置の処理槽に用いる液面
計に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid level gauge used in a processing tank of a semiconductor wet processing apparatus.

〔従来の技術〕[Conventional technology]

従来、この種の液面形は、フロート式、エアーセンサー
式、静電容量式、超音波式等がある。
Conventionally, this type of liquid level type includes a float type, an air sensor type, a capacitance type, an ultrasonic type, etc.

第4図は従来の一例であるフロート式液面計の縦断面図
である。処理液がフロートl8のレベルまでくると、磁
石l9が封入されたフロート18が浮き上がる. フロートl♂が浮き上がると、磁力によりリード2lが
接点20に接触し、信号線22によりその接触を検知す
ることによって、フロート!8のレベルに液面があるこ
とを確認できるようになっている。
FIG. 4 is a longitudinal cross-sectional view of a float type liquid level gauge, which is an example of the conventional technology. When the processing liquid reaches the level of the float 18, the float 18 containing the magnet 19 floats up. When the float l♂ floats up, the lead 2l contacts the contact point 20 due to magnetic force, and the contact is detected by the signal line 22, causing the float! You can now confirm that the liquid level is at level 8.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の液面計は、フロートなどの検知部を直接
処理液中に入れるので、検知部より処理液中に重金属や
パーティクル等が溶出し、それがウェハーを汚染する可
能性が高いという欠点がある。
The above-mentioned conventional liquid level gauges have the disadvantage that because the detection part such as a float is placed directly into the processing liquid, there is a high possibility that heavy metals, particles, etc. will be eluted from the detection part into the processing liquid and contaminate the wafer. There is.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、半導体ウェット処理装置の処理槽に用いる半
導体処理装置用液面計において、処理槽の外底部に設け
られ処理槽内の液重量による処理槽の歪量を検出する歪
量検出部と、同じく処理槽の外底部に設けられ液温度に
よる処理槽の温度変化を検知する温度測定部と、この温
度測定部からの温度信号を歪量信号に換算して前記歪量
検出部からの歪量信号を補正し補正後の歪量信号から液
面高さを算出して表示する演算部とを備えた半導体ウェ
ット処理装置用液面計である。
The present invention provides a liquid level gauge for semiconductor processing equipment used in a processing tank of a semiconductor wet processing equipment, and includes a strain amount detection section that is provided at the outer bottom of the processing tank and detects the amount of distortion in the processing tank due to the weight of liquid in the processing tank. , a temperature measuring section which is also provided at the outer bottom of the processing tank and detects the temperature change of the processing tank due to the liquid temperature, and a temperature signal from this temperature measuring section is converted into a strain amount signal and the distortion amount signal from the strain amount detection section is detected. The present invention is a liquid level meter for a semiconductor wet processing device, which includes a calculation unit that corrects a quantity signal and calculates and displays a liquid level height from the corrected distortion quantity signal.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例を示す概要図である。処
理槽4の外底部に設けられた歪量検知部1より、歪量に
対応した信号が演算部3に入り、又、同様に設けられた
温度測定部2より、処理槽外底部の温度に対応した信号
が演算部3に入る。
FIG. 1 is a schematic diagram showing a first embodiment of the present invention. A signal corresponding to the amount of strain is input to the calculation unit 3 from the strain amount detection unit 1 provided at the outer bottom of the processing tank 4, and a signal corresponding to the amount of strain is input to the calculation unit 3, and the temperature at the outer bottom of the processing tank is detected from the temperature measurement unit 2 similarly provided. The corresponding signal enters the calculation section 3.

演算部3では、この歪信号と温度信号をもとに液面高さ
を算出し、表示するか又は外部に出力信号として取り出
す。
The calculation unit 3 calculates the liquid level height based on the strain signal and the temperature signal, and displays it or takes it out as an output signal to the outside.

第2図は本発明のシステム構成図である.歪量検知部1
は、処理槽4の外底部に張り付けられた歪ゲージ6から
なる。処理槽4内の処理液5の液面が変化すると、処理
液5の重量が変化するので処理槽4の底部にかかる荷重
が変化し、処理槽4の底部の歪が変化する.この歪量の
変化を、歪ゲージ6により電流変化に変換する。
Figure 2 is a system configuration diagram of the present invention. Distortion amount detection section 1
consists of a strain gauge 6 attached to the outer bottom of the processing tank 4. When the liquid level of the processing liquid 5 in the processing tank 4 changes, the weight of the processing liquid 5 changes, so the load applied to the bottom of the processing tank 4 changes, and the strain at the bottom of the processing tank 4 changes. The strain gauge 6 converts this change in strain amount into a current change.

又、温度測定部2は、処理槽4の外底部に張り付けられ
た測温休7からなり、測温体7は温度変化を電流変化に
換算する。
Further, the temperature measuring section 2 consists of a temperature measuring element 7 attached to the outer bottom of the processing tank 4, and the temperature measuring element 7 converts temperature changes into current changes.

歪ゲージ6の電流変化は、歪ゲージ電流変化検出回路9
で検出し、歪量に対応した電圧に変換する。測温体7の
電流変化は、測温体電流変化検出回路8で検出し、温度
歪量に対応した電圧に変換する。
Current changes in the strain gauge 6 are detected by a strain gauge current change detection circuit 9.
is detected and converted into a voltage corresponding to the amount of distortion. A current change in the temperature measuring element 7 is detected by a temperature measuring element current change detection circuit 8 and converted into a voltage corresponding to the amount of temperature distortion.

又、温度補正回路lOでは、歪ゲージ電流変化検出回路
9による電圧信号から、測温体電流変化検出回路8によ
る電圧信号を差し引いて、処理液量に対応した歪量に見
合う電圧信号を作る。
In addition, the temperature correction circuit 10 subtracts the voltage signal from the temperature sensing body current change detection circuit 8 from the voltage signal from the strain gauge current change detection circuit 9 to create a voltage signal corresponding to the amount of strain corresponding to the amount of processing liquid.

この電圧信号を、液面演算回路11で液面高さに換算し
、その結果を表示部l2で表示したり、外部出力回路l
3から外部装置に出力したりする。
This voltage signal is converted into a liquid level height by the liquid level calculation circuit 11, and the result is displayed on the display section l2, and the external output circuit l
3 to an external device.

第3図は本発明の第2の実施例を示す概要図である。第
1の実施例では、歪量検知部1と温度測定部2とを直接
処理槽4の外装部に設けたが、本実施例では同図に示す
ように、外槽l5の槽支持台14に歪量検知部1と温度
測定部2とを設けたもので、処理槽4の真下に歪量検知
部1と温度測定部2がないため、ここに超音波発振器用
振動子16等を取り付けられるという利点がある。
FIG. 3 is a schematic diagram showing a second embodiment of the present invention. In the first embodiment, the strain amount detection section 1 and the temperature measurement section 2 were provided directly on the exterior of the processing tank 4, but in this embodiment, as shown in the figure, the strain detection section 1 and the temperature measurement section 2 were provided directly on the tank support 14 of the outer tank 15. A strain detection section 1 and a temperature measurement section 2 are installed in the processing tank 4. Since there is no strain detection section 1 and temperature measurement section 2 directly below the processing tank 4, an ultrasonic oscillator vibrator 16, etc. is attached here. It has the advantage of being able to

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、処理槽外部に液面を検出
する部分があるので、検出部が処理液中にあるものに比
較して、検出部から処理液中に不純物が溶出することが
ないのでウェハーが汚染されることがなく、又、処理槽
内部に検出部がないため槽容量を減らすことができ、こ
れにより処理液の使用量を低減できる効果がある。
As explained above, since the present invention has a part that detects the liquid level outside the processing tank, impurities are less likely to be eluted from the detection part into the processing liquid, compared to a case where the detection part is inside the processing liquid. Since there is no detection section inside the processing tank, the wafers are not contaminated, and since there is no detection section inside the processing tank, the tank capacity can be reduced, which has the effect of reducing the amount of processing liquid used.

図はそのシステム構成図、第3図は本発明の第2の実施
例の概要図、第4図は従来のフロート式液面計の縦断面
図である。
3 is a schematic diagram of a second embodiment of the present invention, and FIG. 4 is a vertical sectional view of a conventional float type liquid level gauge.

1・・・歪量検知部、2・・・温度測定部、3・・・演
算部、4・−・処理槽、5・・・処理液、6・・・歪ゲ
ージ、7・・・測温体、8・・・測温体電流変化検出回
路、9・・・歪ゲージ電流変化検出回路、10・・・温
度補正回路、11・・・液面演算回路、l2・・・表示
部、l3・・・外部出力回路、14・・・槽支持台、1
5・・・外槽、l6・・・超音波発振器用振動子、17
・・・柱、l訃・・フロート、19・・・磁石、20・
・・接点、2l・・・リード、22・・・信号線。
DESCRIPTION OF SYMBOLS 1... Strain amount detection part, 2... Temperature measurement part, 3... Calculation part, 4... Processing tank, 5... Processing liquid, 6... Strain gauge, 7... Measurement Warm body, 8... Temperature sensing body current change detection circuit, 9... Strain gauge current change detection circuit, 10... Temperature correction circuit, 11... Liquid level calculation circuit, l2... Display section, l3... External output circuit, 14... Tank support stand, 1
5... Outer tank, l6... Vibrator for ultrasonic oscillator, 17
...Column, l...Float, 19...Magnet, 20.
...Contact, 2l...Lead, 22...Signal line.

Claims (1)

【特許請求の範囲】[Claims]  半導体ウェット処理装置の処理槽に用いる半導体処理
装置用液面計において、処理槽の外底部に設けられ処理
槽内の液重量による処理槽の歪量を検出する歪量検出部
と、同じく処理槽の外底部に設けられ液温度による処理
槽の温度変化を検知する温度測定部と、この温度測定部
からの温度信号を歪量信号に換算して前記歪量検出部か
らの歪量信号を補正し補正後の歪量信号から液面高さを
算出して表示する演算部とを備えたことを特徴とする半
導体ウェット処理装置用液面計。
In a liquid level gauge for semiconductor processing equipment used in a processing tank of a semiconductor wet processing equipment, there is a strain amount detection section that is provided at the outer bottom of the processing tank and detects the amount of distortion in the processing tank due to the weight of the liquid in the processing tank, and a temperature measuring section installed on the outer bottom of the unit to detect temperature changes in the processing tank due to liquid temperature, and converting the temperature signal from the temperature measuring section into a strain amount signal to correct the strain amount signal from the strain amount detecting section. 1. A liquid level gauge for a semiconductor wet processing device, comprising: a calculation unit that calculates and displays a liquid level height from a distortion amount signal after correction.
JP11631689A 1989-05-09 1989-05-09 Liquid level gage for semiconductor wet process device Pending JPH02293629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11631689A JPH02293629A (en) 1989-05-09 1989-05-09 Liquid level gage for semiconductor wet process device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11631689A JPH02293629A (en) 1989-05-09 1989-05-09 Liquid level gage for semiconductor wet process device

Publications (1)

Publication Number Publication Date
JPH02293629A true JPH02293629A (en) 1990-12-04

Family

ID=14683975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11631689A Pending JPH02293629A (en) 1989-05-09 1989-05-09 Liquid level gage for semiconductor wet process device

Country Status (1)

Country Link
JP (1) JPH02293629A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108344662A (en) * 2017-01-23 2018-07-31 株式会社平间理化研究所 The gas concentration lwevel display device and developer solution managing device of developer solution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108344662A (en) * 2017-01-23 2018-07-31 株式会社平间理化研究所 The gas concentration lwevel display device and developer solution managing device of developer solution
JP2018120896A (en) * 2017-01-23 2018-08-02 株式会社平間理化研究所 Device for displaying carbon dioxide concentration of developer, and developer management device

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