JPH02292801A - Thick film resistor paste and thick film resistor - Google Patents
Thick film resistor paste and thick film resistorInfo
- Publication number
- JPH02292801A JPH02292801A JP1113726A JP11372689A JPH02292801A JP H02292801 A JPH02292801 A JP H02292801A JP 1113726 A JP1113726 A JP 1113726A JP 11372689 A JP11372689 A JP 11372689A JP H02292801 A JPH02292801 A JP H02292801A
- Authority
- JP
- Japan
- Prior art keywords
- glass powder
- powder
- thick film
- paste
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims abstract description 100
- 239000011521 glass Substances 0.000 claims abstract description 61
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- DHCWLIOIJZJFJE-UHFFFAOYSA-L dichlororuthenium Chemical compound Cl[Ru]Cl DHCWLIOIJZJFJE-UHFFFAOYSA-L 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000000725 suspension Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 23
- 238000010304 firing Methods 0.000 description 9
- 239000010419 fine particle Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は厚膜用材料に係り，特に熱転写プリンタ用感熱
ヘッドに好適な厚膜抵抗体ペースト及び厚膜抵抗体に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to thick film materials, and particularly to a thick film resistor paste and a thick film resistor suitable for a thermal head for a thermal transfer printer.
（従来の技術〕
厚膜抵抗体に用いられる抵抗体ペーストは、一般に導電
微粉末，ガラス粉末，有機樹脂溶媒等からなる。導電微
粉末としては、Ｒｕ○２．ＢｉｚＲｕｚＯ７，Ｍｏ○３
，ＬａＢｅ、などの微粉末が用いられる。特にＲｕＯｚ
（酸化ルテニウム）微粉末を用いた抵抗体ペーストは抵
抗値の温度変化が小さく、ノイズの発生も少ないことか
ら、感熱ヘッドに好適な材料として注目されている。(Prior art) Resistor paste used for thick film resistors generally consists of conductive fine powder, glass powder, organic resin solvent, etc. As conductive fine powder, Ru○2, BizRuzO7, Mo○3 are used.
, LaBe, etc. are used. Especially RuOz
A resistor paste using fine (ruthenium oxide) powder is attracting attention as a material suitable for thermal heads because its resistance value changes little with temperature and generates little noise.
抵抗体ペーストを焼成すると、ＲｕＯ２微粉末がガラス
の粒界に集まり、接触或いはトンネル電流によって通電
路を形成する。従って、ガラス粒界面におけるＲ ｕ
Ｏ ２微粉末の密度及び分散度が抵抗値を決め、通常は
ガラス粉末に対するＲ １１ ０ ２微粉末の含有量を
変えて、抵抗値を制御している。When the resistor paste is fired, the RuO2 fine powder gathers at the grain boundaries of the glass and forms a current conducting path by contact or tunnel current. Therefore, R u at the glass grain interface
The density and dispersion of the O 2 fine powder determine the resistance value, and the resistance value is usually controlled by changing the content of the R 11 0 2 fine powder relative to the glass powder.
この際、含有量を変えて抵抗値を制御するための適当な
粒径があり、Ｒｕ○２微粉末は大きすぎても小さすぎて
も抵抗値の制御が難しくなる。用途によっても異なるが
，通常は０．数μｍ〜数μｍのＲ ｕ Ｏ ２微粉末が
用いられる。特に抵抗体の均一性、再現性を重視する用
途においては、Ｒ ｕ Ｏ ｎ微粉末を分級して適当な
粒径の微粉末だけを選別して用いる場合が多い。At this time, there is an appropriate particle size for controlling the resistance value by changing the content, and if the Ru○2 fine powder is too large or too small, it will be difficult to control the resistance value. Although it varies depending on the application, it is usually 0. R u O 2 fine powder of several μm to several μm is used. Particularly in applications where uniformity and reproducibility of resistors are important, R u O n fine powder is often classified and only fine powder with an appropriate particle size is selected and used.
なお、この種の装置として関連するものには、例えば特
公昭６１− ３１９６０号公報等が挙げられる。Note that related devices of this type include, for example, Japanese Patent Publication No. 31960/1983.
上記のごとく、Ｒ ｕ Ｏ ２微粉末の粒径は抵抗値に
大きく影響する。例えば、ガラス粉末の平均粒径を約１
μｍ一定としてＲｕＯ２微粉末の粒径を変えた場合、膜
厚１０μｍ，ＲｕＯｚ含有量３０ｖｔ％のとき、平均粒
径０．５μｍのＲｕＯｚ微粉末を用いると表面抵抗は約
ＬｏｏｋΩ／口、０．０５μｍのＲｕＯｚ微粉末を用い
ると約１ｋΩ／口となる。すなわち、同量のＲｕ○２を
混入しても粒径が小さい程、抵抗値が小さくなる。Ｒｕ
は貴金属で高価格のため，粒径の小さいＲｕＯｚ微粉末
を用いてその使用量を減らすことはコストの上で重要で
ある。As mentioned above, the particle size of the R u O 2 fine powder greatly affects the resistance value. For example, the average particle size of glass powder is approximately 1
When the particle size of the RuO2 fine powder is changed with μm constant, when the film thickness is 10 μm and the RuOz content is 30 vt%, the surface resistance is approximately LookΩ/hole, 0.05 μm when using RuOz fine powder with an average particle size of 0.5 μm. When RuOz fine powder is used, the resistance becomes about 1 kΩ/mouth. That is, even if the same amount of Ru2 is mixed, the smaller the particle size, the smaller the resistance value. Ru
Since RuOz is a precious metal and is expensive, it is important to reduce the amount of RuOz used by using fine RuOz powder with a small particle size.
一方、前記のとと＜ Ｒ ｕ Ｏ ｚ微粉末の粒径が小
さい程抵抗値の制御が雅しくなる。例えば平均粒径約１
μｍのガラス粉末に対し、平均粒径約０．０４μｍのＲ
ｕＯｘ微粉末を用いた場合、膜厚約１０μｍ．Ｒｕｏｚ
含有量５０ｗｔ％のとき、表面抵抗が数Ω／口となり、
ＲｕＯｚ含有量２０ｗｔ％の時数＋ＫΩ／口と大きく変
化する。Ｒｕ○２微粉末の粒径がより小さくなると、Ｒ
ｕＯ２含有量に対する抵抗値の変化はより急激になる。On the other hand, the smaller the particle size of the fine powder, the more elegant the control of the resistance value becomes. For example, the average particle size is about 1
R with an average particle size of about 0.04 μm for glass powder of μm
When uOx fine powder is used, the film thickness is approximately 10 μm. Ruoz
When the content is 50wt%, the surface resistance is several Ω/mouth,
The number of hours when the RuOz content is 20 wt% + KΩ/mouth varies greatly. As the particle size of the Ru○2 fine powder becomes smaller, R
The change in resistance value with uO2 content becomes more rapid.
また粒径のばらつきの影響も顕著に現われてくる。さら
に、粒径が小さくなるとＲｕ○２微粉末間の凝集が生じ
、抵抗体の均一性，再現性に問題が生しやすくなる。Furthermore, the influence of variation in particle size becomes noticeable. Furthermore, as the particle size becomes smaller, agglomeration occurs between the Ru○2 fine powders, which tends to cause problems in the uniformity and reproducibility of the resistor.
上記の理由のため、従来技術は、粒径のより小さいＲ
ｕ Ｏ ｘ微粉末を用いる方がコストの上で有利である
にもかかわらず、抵抗値の制御、抵抗体の均一性，再現
性を重視し、０．数μｍ〜数μｍのＲｕＯｚ微粉末を分
級して用いていた。従って、従来技術では分級の工程が
あり、さらにＲ ｕ Ｏ ２の使用量が増すためにコス
ト高になってしまう問題があった。For the above reasons, the prior art uses R with smaller particle size.
Although it is more advantageous in terms of cost to use uOx fine powder, we place emphasis on resistance control, uniformity of the resistor, and reproducibility. RuOz fine powder of several μm to several μm was classified and used. Therefore, in the conventional technology, there is a step of classification, and the amount of R u O 2 used increases, resulting in an increase in cost.
本発明の目的は、０．１μｍ以下の粒径のＲｕＯｚ微粉
末を用いて，抵抗値の制御がしやすく、抵抗体の均一性
，再現性に優れた厚膜抵抗体ペースト及び厚膜抵抗体を
低コストで形成することにある。The purpose of the present invention is to provide a thick film resistor paste and a thick film resistor that use RuOz fine powder with a particle size of 0.1 μm or less to easily control the resistance value and have excellent uniformity and reproducibility of the resistor. The objective is to form the system at low cost.
上記目的は、Ｒ ｕ Ｏ ｚ微粉末を用いる代わりに表
面にＲ ｕ Ｏ ２微粉末を均一に分散，固着させたガ
ラス粉末を混合すること及び上記のガラス粉末表面のＲ
ｕＯｚ微粉末がペースト焼成中に凝集しないように高温
軟化性のガラスを選定しかつ、その他に低温軟化性ガラ
スを加えることにより、達成される。The above purpose is to mix glass powder with R u O 2 fine powder uniformly dispersed and fixed on the surface instead of using R u O z fine powder, and to reduce the R on the surface of the glass powder.
This is achieved by selecting a glass that softens at high temperatures so that the uOz fine powder does not aggregate during paste firing, and by adding glass that softens at low temperatures.
表面にＲｕＯｚ微粉末を分散，固着させたガラス粉末（
以後、ガラス粉末Ａと記す）を用いて厚膜抵抗体ペース
トを形成すれば、Ｒ ｕ Ｏ ｚ微粉末はいくら小さく
とも、Ｒ ｕ Ｏ ｚ微粉末間で凝集を生じることはな
い。平均粒径がほぼ等しいガラス粉末を用いれば、ガラ
ス粉末Ａと何もコーティングしていないガラス粉末（以
後、ガラス粉末Ｂと記す）とは容易に混合し、それに伴
ってＲｕＯｚ微粉末も凝集を起こすことなく分散する。Glass powder with RuOz fine powder dispersed and fixed on the surface (
If a thick film resistor paste is formed using glass powder (hereinafter referred to as glass powder A), no agglomeration will occur between the R u O z fine powders, no matter how small they are. If glass powder with approximately the same average particle size is used, glass powder A and uncoated glass powder (hereinafter referred to as glass powder B) will easily mix, and the RuOz fine powder will also agglomerate accordingly. Disperse without any problem.
また、ガラス粉末Ａの表面が通電路となるため、ガラス
粉末Ａ表面に固着させるＲｕＯｚｆｔを一定にしておけ
ば、全体のＲｕ○２含有量を変化させても通電路におけ
るＲｕＯｚ微粒子密度は大幅に変化することはない。従
って抵抗値もＲｕＯ２含有量によって急激に変化するこ
とはない。In addition, since the surface of glass powder A becomes a current-carrying path, if the amount of RuOzft fixed to the surface of glass powder A is kept constant, the RuOz fine particle density in the current-carrying path can be significantly reduced even if the overall Ru○2 content is changed. It never changes. Therefore, the resistance value does not change rapidly depending on the RuO2 content.
さらに、ガラス粉末Ｂに、ガラス粉末Ａよりも低温で軟
化する材料を用いれば、焼成の際ガラス粉末Ｂが軟化し
て基板と接着しても、ガラス粉末Ａは軟化せず，その表
面のＲｕＯｚ微粉末の分散ぐあいも大幅に変化すること
はない。従って、焼成によって抵抗体の均一性は変化す
ることはない。Furthermore, if a material that softens at a lower temperature than glass powder A is used for glass powder B, even if glass powder B softens during firing and adheres to the substrate, glass powder A will not soften, and the RuOz on its surface will not soften. The dispersion of the fine powder also does not change significantly. Therefore, the uniformity of the resistor does not change due to firing.
以下、本発明の一実旅例を第１〜３図により説明する。 Hereinafter, a practical example of the present invention will be explained with reference to FIGS. 1 to 3.
まず、表面にＲｕＯｌｚ微粒子を分散，固着させたガラ
ス粉末Ａの製法について説明する。First, a method for producing glass powder A having RuOlz fine particles dispersed and fixed on its surface will be described.
ＲｕＣｆｌｘ・ｎＨｚｏ （７ｎ化ルテニウム）８．４
ｇを室温の純水３４ｃｃ中に溶解し、Ｒ ｕ Ｃ Ｑ
ｚ水溶液を作る。なお、ＲｕＣＱｚ・ｎＨｚＯ中のＲｕ
含有量は約４５ｗｔ％である。次に平均粒径３μｍの球
状のＳ ｉ ０２粉末５ｇを、上記のＲ ｕ Ｃ Ｑ
ｘ水溶液中に懸濁する。この際、水溶液の超音波等で振
動を加えるとＳｉ○２粉末の懸濁が容易となる。RuCflx・nHzo (ruthenium 7n) 8.4
Dissolve g in 34 cc of pure water at room temperature, R u C Q
zMake an aqueous solution. In addition, Ru in RuCQz・nHzO
The content is approximately 45 wt%. Next, 5 g of spherical S i 02 powder with an average particle size of 3 μm was added to the above R u C Q
x Suspend in aqueous solution. At this time, if the aqueous solution is vibrated by ultrasonic waves or the like, the Si○2 powder can be easily suspended.
次にＳｉＯｚ粉末をｙＩ！４濁したＲ ｕ Ｃ．Ω２水
溶液を電気炉で６００℃，２時間加熱する。焼成中は電
気炉中に０ ． ２ Ｑ ／ｍｉｎの純酸素を流し、酸
素雰囲気とした。Next, add SiOz powder to yI! 4 Cloudy R u C. Heat the Ω2 aqueous solution at 600°C for 2 hours in an electric furnace. During firing, 0.0% was placed in the electric furnace. Pure oxygen was flowed at 2 Q/min to create an oxygen atmosphere.
焼成後のＳｉＯｚ粉末は（ガラス粉末Ａ）、粉末表面に
，平均粒程０．１μｍ以下のＲｕＯｚ′＃粒子が分散，
付着した状態となる。焼成後のＳｉＯｚ粉末のＳＥＭ写
真を第１図に示す。なお、同試料はＳＥＭ（走査型電子
顕著鏡）による電子線回折により、球状のＳ ｉＯ ｚ
粉末表面の微粒子がルチル構造のＲｕ○２であることを
確認した。After firing, the SiOz powder (glass powder A) has RuOz′# particles with an average particle size of 0.1 μm or less dispersed on the powder surface.
It becomes attached. FIG. 1 shows a SEM photograph of the SiOz powder after firing. The same sample was found to be spherical SiO z by electron diffraction using an SEM (scanning electron conspicuous mirror).
It was confirmed that the fine particles on the powder surface were Ru2 having a rutile structure.
次に上記方法で形成したガラス粉末Ａに，ｐｂｏ−Ｓ
ｉｏｚ −Ｂ２０ｓを主成分とするガラス粉末Ｂ（平均
粒径２μｍ）をＬｏｇ加え、■型混合器により均一時間
混合し、均一な混合粉とする。ガラス粉末Ａの破壊を防
ぐため、この混合にはボールミルよりもＶ型混合器の方
が望ましい。Next, pbo-S was added to the glass powder A formed by the above method.
Log of glass powder B (average particle size 2 μm) containing Ioz-B20s as a main component was added and mixed for a uniform time using a ■ type mixer to obtain a uniform mixed powder. To prevent glass powder A from breaking, a V-type mixer is preferable to a ball mill for this mixing.
均一に混合したガラス粉末に、有機樹脂溶媒を加え、３
本ロールミルにより均一時間混練して厚膜抵抗体ペース
トとする。ペースト状１ふではＲｕｎ２／ （ＲｕＯｚ
＋ガラス）が約２５ｗｔ％となる。なお、Ｐ ｂ Ｏ
− Ｓ ｉ○２−Ｂ２０３を主成分とするガラス粉末巳
の軟化点は約６００℃，ガラス粉末Ａの軟化点は約１５
００℃である。Add an organic resin solvent to the uniformly mixed glass powder,
This roll mill is used to knead for a uniform time to form a thick film resistor paste. Run 2/ (RuOz
+ glass) is approximately 25 wt%. In addition, P b O
- The softening point of Glass Powder A whose main component is Si○2-B203 is approximately 600°C, and the softening point of Glass Powder A is approximately 15
It is 00℃.
上記方法で形成した厚膜抵抗体ペーストを、アルミナ基
板上に印刷し、乾燥後、大気中で約８００℃，１時間加
熱して焼成する。焼成前後の印刷膜のｆ′ｒ面の概略を
、第２図，第３図に示す。イ１機樹脂成分が分解，蒸発
後、ガラス粉末Ｂ２が軟化しアルミナ基板３に強固に固
着する。また、この際、有機樹脂成分の分解，蒸発によ
って生じたガラス粉末間の隙間は、軟化したガラス粉末
Ｂ２が変形して埋める。８００℃，１時間の加熱では、
ガラス粉末Ａ１及びその表面のＲｕ○２微粒子ｌま軟イ
ヒ，焼結など生じず、緻密化したガラスＢ２中番こ均一
に混在する状態となる。このガラス粉末Ａ１同志が接触
し、通電路を形成する。全体の抵抗値＆ま、ガラス粉末
Ａ１表面のＲｕＯ２微粒子密度及び全体におけるガラス
粉末Ａ１の密度で決まる。本条件のもとでは、膜厚約１
０μｍＬこ対して、表面抵抗約５００Ω／口となる。The thick film resistor paste formed by the above method is printed on an alumina substrate, dried, and then heated and fired at about 800° C. for 1 hour in the air. The outline of the f'r plane of the printed film before and after firing is shown in FIGS. 2 and 3. After the resin component decomposes and evaporates, the glass powder B2 softens and firmly adheres to the alumina substrate 3. Further, at this time, the softened glass powder B2 deforms and fills the gaps between the glass powders caused by the decomposition and evaporation of the organic resin component. When heated at 800℃ for 1 hour,
The glass powder A1 and the Ru2 fine particles on its surface do not become soft or sintered, and the densified glass B2 is uniformly mixed. This glass powder A1 comes into contact with each other to form a current conducting path. The overall resistance value is determined by the RuO2 fine particle density on the surface of the glass powder A1 and the overall density of the glass powder A1. Under these conditions, the film thickness is approximately 1
For 0 μmL, the surface resistance is approximately 500Ω/mouth.
なお、ガラス粉末ＡＩの製法に関して番よ、Ｒ ｕ Ｃ
Ｑ ２水溶液をＳｉ○２粉末上レこ噴嚇して、これを
熱風と接触させ乾燥し（スプレードライング法），その
後電気炉で焼成しＲｕＯｚ｛ヒしてもよい．或いは、Ｓ
ｉＯｚ粉末を基板、ＲｕＯｚ圧粉体をターゲットとして
、レーザ蒸着法、或−１まスパッタリング法、或いはＥ
−ガンレこよる真空蒸着法等によって形成してもよく、
製法を稈艮定するものではない。また、ガラス粉末Ａｌ
ｔま、ＳｉＯｚ＋こ限らず、ガラスとなじみのよｂ）高
隔材料、例えｉｆＡ ｆｌ ｘＯａ， Ｚ ｒ Ｏｘ等
であってもよ％Ｎ。Regarding the manufacturing method of glass powder AI, R u C
Q2 aqueous solution may be sprayed onto Si○2 powder, dried by contacting with hot air (spray drying method), and then fired in an electric furnace to form RuOz. Or S
Using iOz powder as a substrate and RuOz compact as a target, laser evaporation method, -1 sputtering method, or E
- May be formed by Ganley vacuum deposition method etc.
It is not intended to determine the manufacturing method. In addition, glass powder Al
Not only SiOz+, but also high barrier materials that are compatible with glass, such as ifAflxOa, ZrOx, etc.%N.
本発明によれば、従来使用の雅しかった０．１μｍ以下
のＲｕＯｚ微粉末を容易に分散することができるため、
抵抗値の制御性、抵抗体の均一性に優れる。また、分級
の工程が省略でき、Ｒｕ０２の使用量も削減できるため
、大幅なコスト低減の効果がある。According to the present invention, it is possible to easily disperse RuOz fine powder of 0.1 μm or less, which has been used in the past.
Excellent controllability of resistance value and uniformity of resistor. Furthermore, the classification process can be omitted and the amount of Ru02 used can be reduced, resulting in a significant cost reduction effect.
第１図は本発明の一実施例に係るＲｕ○２微粒子を表面
に分散，固着したＳｉＯｚ微粒子の状態を撮影した粒子
構造の走査型電子顕微鏡写真、第２図は本発明の一実施
例の厚膜抵抗体ペーストの焼成前の＊Ｅｌ８を示す模式
図、第３図は焼成後の概略を各々示す模式図である。
１・・・ガラス粉末Ａ、２・・・ガラス粉末Ｂ、３・・
・アルミナ基板。
茶
ｌ
図
第
図
冨
図
アルミ六導引艮FIG. 1 is a scanning electron micrograph of the particle structure of SiOz fine particles on which Ru○2 fine particles are dispersed and fixed on the surface according to an embodiment of the present invention, and FIG. 2 is a scanning electron micrograph of the particle structure according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing *El8 before firing the thick film resistor paste, and FIG. 3 is a schematic diagram showing the outline after firing. 1...Glass powder A, 2...Glass powder B, 3...
・Alumina substrate. Tea Al Diagram Tomizu Aluminum Six-Lead Drawer
Claims (2)
ルテニウム微粉末をコーティングしたガラス粉末Ａと、
該ガラス粉末Ａの軟化温度よりも低い温度で軟化するガ
ラス粉末Ｂとを含むことを特徴とする厚膜抵抗体ペース
ト。1. In the paste used for thick film resistors, glass powder A whose surface is coated with fine ruthenium oxide powder,
A thick film resistor paste comprising a glass powder B that softens at a temperature lower than the softening temperature of the glass powder A.
をコーティングしたガラス粉末Ａと、該ガラス粉末Ａの
軟化温度よりも低い温度で軟化するガラス粉末Ｂとを含
むペーストを基板に塗付後、ガラス粉末Ａが軟化に致ら
ず、かつガラス粉末Ｂが軟化する温度範囲で焼成したこ
とを特徴とする厚膜抵抗体。2. In a thick film resistor, after applying a paste containing a glass powder A whose surface is coated with fine ruthenium oxide powder and a glass powder B that softens at a temperature lower than the softening temperature of the glass powder A to a substrate, the glass powder is applied to the substrate. A thick film resistor characterized in that A is fired in a temperature range in which glass powder B does not soften and glass powder B softens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1113726A JPH02292801A (en) | 1989-05-08 | 1989-05-08 | Thick film resistor paste and thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1113726A JPH02292801A (en) | 1989-05-08 | 1989-05-08 | Thick film resistor paste and thick film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02292801A true JPH02292801A (en) | 1990-12-04 |
Family
ID=14619583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1113726A Pending JPH02292801A (en) | 1989-05-08 | 1989-05-08 | Thick film resistor paste and thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02292801A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009105263A (en) * | 2007-10-24 | 2009-05-14 | Panasonic Corp | Resistive paste and its production method |
| JP2014040661A (en) * | 2006-07-21 | 2014-03-06 | Valtion Teknillinen Tutkimuskeskus | Method for manufacturing conductor and semiconductor |
| CN111247607A (en) * | 2018-01-17 | 2020-06-05 | 三菱综合材料株式会社 | Thermistor element and method for manufacturing the same |
-
1989
- 1989-05-08 JP JP1113726A patent/JPH02292801A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014040661A (en) * | 2006-07-21 | 2014-03-06 | Valtion Teknillinen Tutkimuskeskus | Method for manufacturing conductor and semiconductor |
| US9011762B2 (en) | 2006-07-21 | 2015-04-21 | Valtion Teknillinen Tutkimuskeskus | Method for manufacturing conductors and semiconductors |
| JP2009105263A (en) * | 2007-10-24 | 2009-05-14 | Panasonic Corp | Resistive paste and its production method |
| CN111247607A (en) * | 2018-01-17 | 2020-06-05 | 三菱综合材料株式会社 | Thermistor element and method for manufacturing the same |
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