JPH02288368A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH02288368A
JPH02288368A JP10964289A JP10964289A JPH02288368A JP H02288368 A JPH02288368 A JP H02288368A JP 10964289 A JP10964289 A JP 10964289A JP 10964289 A JP10964289 A JP 10964289A JP H02288368 A JPH02288368 A JP H02288368A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
ferrodielectric
electrode
si
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10964289A
Inventor
Yukio Morozumi
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To provide excellent integration, productivity by forming at least one of electrodes for holding a ferrodielectric film in the same mask pattern as that of the ferrodielectric film.
CONSTITUTION: A field oxide film 12 is grown, for example, on a P-type silicon substrate 11, a gate insulating electrode 13 and a gate electrode 14 are formed, phosphorus is ion implanted to form N-type impurity layers 15, 16, an interlayer insulating film 17 is formed, and a contact hole is opened. Then, poly-Si is vapor grown, impurity is doped, a ferrodielectric film 19 is sputtered, then heat treated, poly-Si is again vapor grown, and impurity is doped. Thereafter, with photoresist 30 as a mask the film 19 the poly-Si to become lower electrodes 20, 18 are dry etched in a predetermined shape continuously in the same chamber. Thus, since the ferrodielectric film, the lower or upper electrode are formed in a self-alignment manner, the control of size can be facilitated.
COPYRIGHT: (C)1990,JPO&Japio
JP10964289A 1989-04-28 1989-04-28 Manufacture of semiconductor device Pending JPH02288368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10964289A JPH02288368A (en) 1989-04-28 1989-04-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10964289A JPH02288368A (en) 1989-04-28 1989-04-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02288368A true true JPH02288368A (en) 1990-11-28

Family

ID=14515457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10964289A Pending JPH02288368A (en) 1989-04-28 1989-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02288368A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218680A (en) * 1990-01-24 1991-09-26 Toshiba Corp Semiconductor memory device and manufacture thereof
US6097051A (en) * 1995-12-05 2000-08-01 Hitachi, Ltd. Semiconductor device and method of fabricating
US6432767B2 (en) 1995-12-05 2002-08-13 Hitachi, Ltd. Method of fabricating semiconductor device
US6822276B1 (en) 1998-09-10 2004-11-23 Renesas Technology Corp. Memory structure with a ferroelectric capacitor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03218680A (en) * 1990-01-24 1991-09-26 Toshiba Corp Semiconductor memory device and manufacture thereof
US6097051A (en) * 1995-12-05 2000-08-01 Hitachi, Ltd. Semiconductor device and method of fabricating
US6338994B1 (en) 1995-12-05 2002-01-15 Hitachi, Ltd. Semiconductor device and method of fabricating thereof
US6432767B2 (en) 1995-12-05 2002-08-13 Hitachi, Ltd. Method of fabricating semiconductor device
US6822276B1 (en) 1998-09-10 2004-11-23 Renesas Technology Corp. Memory structure with a ferroelectric capacitor

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