JPH02288043A - Cathode for electron tube - Google Patents
Cathode for electron tubeInfo
- Publication number
- JPH02288043A JPH02288043A JP1106307A JP10630789A JPH02288043A JP H02288043 A JPH02288043 A JP H02288043A JP 1106307 A JP1106307 A JP 1106307A JP 10630789 A JP10630789 A JP 10630789A JP H02288043 A JPH02288043 A JP H02288043A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- alkaline earth
- cathode
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 25
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052788 barium Inorganic materials 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 15
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 239000010936 titanium Substances 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 4
- 239000010955 niobium Substances 0.000 claims abstract description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 4
- 239000010948 rhodium Substances 0.000 claims abstract description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 239000010937 tungsten Substances 0.000 claims abstract description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 27
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 17
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- -1 magnanese Chemical compound 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 3
- 239000002075 main ingredient Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 49
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical group [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical class [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野]
この発明は、TV用ジブラウン管どに用いられる電子管
用陰極に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cathode for an electron tube used in a di-braun tube for TV.
第2図は従来のTV用ジブラウン管撮像管に用いられて
いる陰極を示すものであり、図において、1はシリコン
(Si)、マグネシウム(Mg)などの還元性元素を微
量含む主成分がニッケルからなる有底筒状の基体、2は
この基体lの底部上面に被着され、少なくともバリウム
(Ba)を含み、他にストロンチウム(Sr)あるいは
/及びカルシウム(Ca)を含むアルカリ土類金属酸化
物からなる電子放射物質層、3は上記基体1内に配設さ
れたヒータであり、加熱により上記電子放射物質層2か
ら熱電子を放出させるためのものである。Figure 2 shows a cathode used in a conventional di-cathode ray tube for TVs. A cylindrical base 2 with a bottom is adhered to the upper surface of the bottom of the base 1, and contains an alkaline earth metal oxide containing at least barium (Ba) and also strontium (Sr) and/or calcium (Ca). The electron emitting material layer 3 made of a material is a heater disposed within the base 1, and is used to cause the electron emitting material layer 2 to emit thermoelectrons by heating.
かかる構成の電子管用陰極において、基体1への電子放
射物質層2の被着は次のようにして行われる。まず、ア
ルカリ土類金属(Ba、 Sr、 Ca)の三元炭酸塩
からなる懸濁液を基体lの底部上面に塗布し、真空排気
工程中にヒータ3によって加熱する。この時、アルカリ
土類金属の炭酸塩はアルカリ土類金属の酸化物に変化す
る。その後、アルカリ土類金属の酸化物の一部を還元し
半導体的性質を有するように活性化を行い、基体1上に
アルカリ土類金属の酸化物からなる電子放射物質層2を
得る。In the cathode for an electron tube having such a configuration, the electron emitting material layer 2 is deposited on the substrate 1 in the following manner. First, a suspension consisting of a ternary carbonate of alkaline earth metals (Ba, Sr, Ca) is applied to the bottom upper surface of the substrate 1, and heated by the heater 3 during the evacuation process. At this time, the alkaline earth metal carbonate changes to an alkaline earth metal oxide. Thereafter, a part of the alkaline earth metal oxide is reduced and activated to have semiconductor properties, thereby obtaining an electron emitting material layer 2 made of the alkaline earth metal oxide on the substrate 1.
上記活性化工程においては、アルカリ土類金属の酸化物
の一部は次のように反応する。即ち、基体l内のシリコ
ン、マグネシウム等の還元性元素は、拡散によりアルカ
リ土類金属の酸化物と基体1との界面に移動し、アルカ
リ土類金属酸化物と反応する。例えば、アルカリ土類金
属酸化物が酸化バリウム(BaO)であれば、次式(1
)、 (2)のように反応する。In the activation step, a portion of the alkaline earth metal oxide reacts as follows. That is, reducing elements such as silicon and magnesium in the base 1 move to the interface between the alkaline earth metal oxide and the base 1 by diffusion and react with the alkaline earth metal oxide. For example, if the alkaline earth metal oxide is barium oxide (BaO), the following formula (1
), reacts as shown in (2).
BaO+ KSI = Ba 十′/2S+Oz
++ ・+ (1)BaO+ Mg = Ba
+ Mg’O−−(2)この反応により基体1上の
アルカリ土類金属酸化物の一部が還元され、酸素欠乏型
の半導体となり、陰極温度700〜800″Cの動作温
度で0.5〜0.8 A/cdの電子放射が得られるこ
とになる。BaO+ KSI = Ba 1'/2S+Oz
++ ・+ (1) BaO+ Mg = Ba
+ Mg'O-- (2) Through this reaction, a part of the alkaline earth metal oxide on the substrate 1 is reduced, becoming an oxygen-deficient semiconductor, and the cathode temperature is 0.5 at an operating temperature of 700-800''C. An electron emission of ~0.8 A/cd will be obtained.
ところが、上記電子管用陰極では、電子放射が0.5〜
0.8A/cd以上の電流密度は取り出せない。However, in the above cathode for an electron tube, the electron emission is 0.5~
A current density of 0.8 A/cd or higher cannot be obtained.
その理由として、アルカリ土類金属酸化物の一部を還元
反応させた場合、上記(1)、 (2)弐から明らかな
ように、基体1とアルカリ土類金属酸化物層との界面に
SiO□、 ngoあるいはBaO・SiO□なとの複
合酸化物層(中間層)が形成され、この中間層が高抵抗
層となって電流の流れを妨げること、及び上記中間層が
基体l中の還元性元素(Si、 Mg)が電子放射物質
層2の表面側へ拡散するのを妨げるため十分な量のバリ
ウム(Ba)が生成されないことが考えられている。つ
まり、電子管動作中に基体1と電子放射物質層2との界
面近傍、特に基体1表面近傍のニッケル結晶粒界と上記
界面より10p1程度電子放射物質層2内側の位置に上
記中間層が偏析するため、電流の流れ及び電子放射物質
層2表面側への還元性元素の拡散が妨げられ、高電流密
度下の十分な電子放出特性が得られないという問題があ
った。The reason for this is that when a part of the alkaline earth metal oxide is subjected to a reduction reaction, as is clear from (1) and (2) above, SiO2 is formed at the interface between the substrate 1 and the alkaline earth metal oxide layer. A composite oxide layer (intermediate layer) of □, NGO or BaO/SiO□ is formed, and this intermediate layer becomes a high resistance layer and obstructs the flow of current, and the intermediate layer reduces the reduction in the substrate l. It is considered that a sufficient amount of barium (Ba) is not generated because it prevents the chemical elements (Si, Mg) from diffusing to the surface side of the electron emitting material layer 2. That is, during electron tube operation, the intermediate layer segregates near the interface between the substrate 1 and the electron emitting material layer 2, particularly at the nickel grain boundary near the surface of the substrate 1 and at a position about 10p1 inside the electron emitting material layer 2 from the interface. Therefore, the flow of current and the diffusion of the reducing element toward the surface of the electron emitting material layer 2 are hindered, resulting in a problem that sufficient electron emission characteristics under high current density cannot be obtained.
これに対して、特願昭60−229303号の出願には
、基体に0.01〜0.5重置%の希土類金属を含有さ
せる手段が示されている。これは電子放射物質層を基体
に被着形成する際の上記活性化時にアルカリ土類金属の
炭酸塩が分解するとき、あるいは陰極としての動作中に
酸化バリウムが解離反応を起こすときの基体の酸化反応
を防止しようとするものである。そして又電子放射物質
層中への基体含有の還元性元素の拡散を適度に制御し、
該還元性元素による複合酸化物からなる中間層が基体と
電子放射物質層界面近傍に集中的に形成されることを防
止し、中間層を電子放射物質層内に分散させようとして
いる。つまり、この第2の従来例の電子管用陰極は、上
記中間層の分散により1〜2^/cd程度の高電流密度
動作でのエミッション劣化が少なくなるという優れた特
性を有するものである。しかし、この電子管用陰極にお
いても、2 A/dを超える例えば2.5^/ctlの
高電流密度動作ではエミッション劣化が大きいという問
題がある。On the other hand, Japanese Patent Application No. 1983-229303 discloses a method of incorporating 0.01 to 0.5% of rare earth metal into the substrate. This is caused by oxidation of the substrate when alkaline earth metal carbonate decomposes during the activation described above when depositing an electron emitting material layer on the substrate, or when barium oxide undergoes a dissociation reaction during operation as a cathode. This is an attempt to prevent a reaction. In addition, the diffusion of the reducing element contained in the substrate into the electron emitting material layer is moderately controlled,
It is intended to prevent the intermediate layer made of a composite oxide of the reducing element from being formed intensively near the interface between the substrate and the electron emitting material layer, and to disperse the intermediate layer within the electron emitting material layer. In other words, the electron tube cathode of this second conventional example has excellent characteristics in that emission deterioration is reduced during high current density operation of about 1 to 2^/cd due to the dispersion of the intermediate layer. However, even in this cathode for an electron tube, there is a problem that emission deterioration is large when operating at a high current density exceeding 2 A/d, for example, 2.5^/ctl.
次に特願昭60−160851号の出願には、電子放射
物質層に0.1〜20重量%の希土類金属酸化物を含有
させることにより、上述の第2の従来例と同様に基体酸
化を防止し中間層を分散させるという技術が示されてい
る。この場合上記と同様に2A/cdの高電流密度動作
でエミッションの劣化を少なくできる。しかしながら2
A/crj以上の高電流密度動作においては電子放射物
質層を流れる電流によるジュール熱でバリウムの蒸発が
顕著になり、電子放射特性が劣化することがある。Next, in the application of Japanese Patent Application No. 160851/1985, the substrate oxidation is prevented by containing 0.1 to 20% by weight of rare earth metal oxide in the electron emitting material layer, as in the second conventional example mentioned above. Techniques have been shown to prevent and disperse intermediate layers. In this case, the deterioration of emissions can be reduced by operating at a high current density of 2 A/cd, as described above. However, 2
In operation at a high current density of A/crj or higher, evaporation of barium becomes significant due to Joule heat caused by the current flowing through the electron emitting material layer, and electron emission characteristics may deteriorate.
この発明者等は上記のような問題点を解消するために、
先に主成分がニッケルからなる基体上に、少なくともバ
リウムを含むアルカリ土類金属酸化物を主成分とし、こ
れにスカンジウムの化合物と、アルミニウム、シリコン
、チタン等の酸化物の1種とを含んだ電子放射物質層を
被着させた電子管陰極管を提案した。In order to solve the above problems, the inventors
First, on a substrate whose main component is nickel, the main component is an alkaline earth metal oxide containing at least barium, which also contains a compound of scandium and one type of oxide of aluminum, silicon, titanium, etc. An electron tube cathode tube coated with an electron emissive material layer was proposed.
そしてこれにより上述の2A/dを超える高電流密度動
作においても長期に安定したエミッション特性を示す電
子管用陰極を提供することができた。As a result, it was possible to provide an electron tube cathode that exhibits long-term stable emission characteristics even in high current density operation exceeding 2 A/d.
しかしながら上記の従来例及び発明者等による先の提案
の電子管用陰極において、特に上記2A/c+aを超え
るような高電流密度動作において、かつ長時間の使用後
の電子管陰極の基体と電子放射物質層との界面において
は、非常番ご稀でしがちその理由が詳らかではないが導
電性の低下を生し、その結果特に高電流密度下での電子
放射特性に問題を生じ該電子管陰極のエミッション特性
を劣化させる重大な原因となり、製品の信頼性を低下さ
せる問題があった。However, in the above-mentioned conventional example and the cathode for an electron tube proposed earlier by the inventors, the substrate of the electron tube cathode and the electron emitting material layer, especially in high current density operation exceeding 2A/c+a, and after long-term use. At the interface between the electron tube and the electron tube, the conductivity decreases, although the reason is not clear. There was a problem that caused serious deterioration of the product and reduced the reliability of the product.
この発明はこのような問題点を解消するためになされた
ものである。This invention has been made to solve these problems.
この発明は、主成分がニッケルからなる基体上に、第1
層として酸化スカンジウムと、鉄、アルミニウム、チタ
ン、ジルコニウム、ハフニウム。In this invention, a first
Scandium oxide as a layer and iron, aluminum, titanium, zirconium, hafnium.
ニオブ、タンタル、モリブデン、タングステンレニウム
、オスミウム、イリジウム、白金、パラジウム、ロジウ
ム、金、バナジウム、クロム、マンガン、銅、亜鉛、ビ
スマス、インジウム、シリコンの少なくとも1種とを含
む混合物層を被着し、さらにこの第1層混合物層上に少
なくともバリウムを含むアルカリ土類金属酸化物を被着
形成した電子放射物質層を備えたことを特徴とする電子
管用陰極である。depositing a mixture layer containing at least one of niobium, tantalum, molybdenum, tungsten rhenium, osmium, iridium, platinum, palladium, rhodium, gold, vanadium, chromium, manganese, copper, zinc, bismuth, indium, and silicon; The cathode for an electron tube further comprises an electron emitting material layer formed by depositing an alkaline earth metal oxide containing at least barium on the first mixture layer.
(作 用〕
この発明においては、基体上に先づ第1層として鉄、ア
ルミニウム、チタン、銅等の少なくとも1種と酸化スカ
ンジウムとの混合物が被着され、更にその上に少なくと
もバリウムを含むアルカリ土類金属酸化物による電子放
射物質層が被着形成されている。(Function) In this invention, a mixture of at least one of iron, aluminum, titanium, copper, etc. and scandium oxide is deposited on the substrate as a first layer, and an alkali containing at least barium is further applied on the mixture. An electron emitting material layer of earth metal oxide is deposited.
従って上記第1層温合物中の鉄、uAなどの金属の存在
が基体及び電子放射物質層界面での導電性を高く保ちそ
の結果、特に高電流密度下での電子放出特性を維持して
前記エミッション特性の劣化を防止する作用を示す。Therefore, the presence of metals such as iron and uA in the first layer mixture maintains high conductivity at the interface between the substrate and the electron emitting material layer, and as a result, maintains the electron emission characteristics especially under high current density. This shows an effect of preventing deterioration of the emission characteristics.
以下この発明の一実施例を第1図に基づいて説明する。 An embodiment of the present invention will be described below with reference to FIG.
この図において、■は主成分がニッケルからなる基体で
あり、この基体1中にはSi、 Mgなどの還元剤が含
有されている。In this figure, ■ is a substrate whose main component is nickel, and this substrate 1 contains a reducing agent such as Si or Mg.
次に4は、上記基体lの底部上面に被着された第1の混
合物層であって、酸化スカンジウムと、鉄、アルミニウ
ム、チタン、ジルコニウム、ハフニウム、ニオブ、タン
タル、モリブデン、タングステン、レニウム、オスミウ
ム、イリジウム、白金、パラジウム、ロジウム、金、バ
ナジウム、クロム、マンガン、銅、亜鉛、ビスマス、イ
ンジウム、シリコンの少なくとも1種とを含む混合物で
ある。これら鉄、アルミニウム、銅などの平均粒径は約
2ミクロン程度が好ましいが特に制約はない、又これら
鉄、アルミニウム、銅などの酸化スカンジウムに対する
混合量は0.5〜lO%、好ましくは3重量%である。Next, 4 is a first mixture layer deposited on the bottom top surface of the substrate l, comprising scandium oxide, iron, aluminum, titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, rhenium, osmium. , iridium, platinum, palladium, rhodium, gold, vanadium, chromium, manganese, copper, zinc, bismuth, indium, and silicon. The average particle size of these iron, aluminum, copper, etc. is preferably about 2 microns, but there is no particular restriction, and the mixing amount of these iron, aluminum, copper, etc. with respect to scandium oxide is 0.5 to 10%, preferably 3% by weight. %.
その下限以下では導電性が充分でなく、又上限以上はそ
の必要性がなくかつ被着性が低下する。使用バインダー
は例えばニトロセルローズを含む酢酸ブチルラッカー等
が望ましい。酸化スカンジウム及び上記金属粉を約3重
量%程度分散させスプレー法等により塗布し乾燥させる
。乾燥膜厚としては5〜20.望ましくは10ミクロン
程度とするのが好ましい。Below the lower limit, the conductivity will not be sufficient, and above the upper limit, there will be no need for it and the adhesion will decrease. The binder used is preferably, for example, butyl acetate lacquer containing nitrocellulose. Scandium oxide and the metal powder mentioned above are dispersed in an amount of about 3% by weight, applied by a spray method, and dried. The dry film thickness is 5 to 20. The thickness is desirably about 10 microns.
そして更に水素雰囲気中、1000°C,5分程度の焼
結を行う。Then, sintering is further performed at 1000° C. for about 5 minutes in a hydrogen atmosphere.
次に5は、上記第1の混合物層4上に被着された電子放
射物質層であり、具体的にはバリウム。Next, 5 is an electron emissive material layer deposited on the first mixture layer 4, specifically barium.
ストロンチウム、カルシウムの三元酸化物を主成分とし
たものである。上記バリウムなどのアルカリ土類金属酸
化物は、上述した如くはじめ炭酸塩で混合し、従来と同
様に、常法の如く炭酸塩から酸化物への分解過程及び酸
化物の一部を還元する活性化過程を経て形成される。The main ingredients are ternary oxides of strontium and calcium. The above-mentioned alkaline earth metal oxides such as barium are first mixed with carbonate as described above, and as in the past, the decomposition process from carbonate to oxide and the activity of reducing a part of the oxide are carried out as in the conventional method. It is formed through a process of oxidation.
第3図は、この発明の具体例として、主成分が二・7ケ
ルからなる基体上に、第1層として酸化スカンジウムに
鉄粉を3重量%混入したものを被着、第2層としてバリ
ウム ストロンチウム、カルシウムの酸化物に被着した
もの(a)、第1層として酸化スカンジウムに銅粉を3
重量%混入したもの(b)及び第1層として酸化スカン
ジウムに鉄粉を2重量%及び銅粉を1重量%混入したも
の(C)、さらに従来例としてバリウム、ストロンチウ
ム、カルシウムの酸化物に酸化スカンジウムを4重量%
含むもの(d)、及び酸化スカンジウムを含有しないも
の(e)による電子放射物質層を、夫々上記の基体上に
上記説明の方法に準する手段で形成して電子管用陰極を
作成し、この電子管用陰極を用いて2極真空管を作成し
、2.5A/aflの電流密度で動作させて寿命試験を
行った場合のエミッション電流の変化を調べた結果を示
したものである。Figure 3 shows a specific example of the present invention, in which scandium oxide mixed with 3 wt. (a) Adhering to strontium and calcium oxides, copper powder is applied to scandium oxide as the first layer.
% by weight (b), scandium oxide mixed with 2% by weight of iron powder and 1% by weight of copper powder (C), and a conventional example of scandium oxide oxidized to oxides of barium, strontium, and calcium. 4% scandium by weight
Electron emitting material layers (d) containing scandium oxide and (e) containing no scandium oxide are respectively formed on the above substrate by a method similar to the method described above to prepare a cathode for an electron tube. This figure shows the results of examining changes in emission current when a diode vacuum tube was fabricated using a tube cathode and a life test was performed by operating it at a current density of 2.5 A/afl.
第3図の結果によれば、電子放射物質層として酸化スカ
ンジウムを含有しないもの(e)に比べて、本発明の実
施例品(a)、(b)及び(C)、即ち第1層として酸
化スカンジウムと、鉄、銅、あるいはこれら両者の混合
物層を形成したものは経時的なエミッション劣化が著し
く少なく高い寿命を有するものであった。According to the results shown in FIG. 3, the example products (a), (b) and (C) of the present invention, that is, the first layer Those in which layers of scandium oxide, iron, copper, or a mixture of both were formed exhibited significantly less emission deterioration over time and had a long life.
そして又、バリウム、ストロンチウム、カルシウムの酸
化物に酸化スカンジウムを含有させ、基体上に単独層と
して形成させたもの(d)に比べても、特に6000〜
8000時間にも達する長時間使用でそれらのエミッシ
ョン劣化の差異が歴然としていた。Moreover, compared to (d), in which barium, strontium, and calcium oxides contain scandium oxide and are formed as a single layer on a substrate, it is particularly
After long-term use of up to 8,000 hours, the difference in emission deterioration was obvious.
この発明の電子管用陰極が上記の如〈従来品に比べて高
い優れた特性を維持し得る理由は以下のように考えられ
る。The reason why the cathode for electron tubes of the present invention is able to maintain the above-mentioned excellent characteristics, which are higher than those of conventional products, is considered to be as follows.
fi1基体上に先づ第1層として鉄、アルミニウム。Iron and aluminum are first layered on the fi1 substrate.
チタン、 !1;I等の少なくとも1種と酸化スカンジ
ウムとの混合物が被着され、更にその上に少なくともバ
リウムを含むアルカリ土類金属酸化物による電子放射物
質層が被着形成されていることにより、上記第1層温合
物中の鉄、銅などの金属の存在が基体及び電子放射物質
層界面での導電性を高く保ちその結果、特に高電流密度
下での電子放出特性を維持して前記エミッション特性の
劣化を防止することになる。Titanium, ! 1; A mixture of at least one of I and scandium oxide is deposited, and an electron emitting material layer made of an alkaline earth metal oxide containing at least barium is further deposited thereon. The presence of metals such as iron and copper in the one-layer mixture maintains high conductivity at the interface between the substrate and the electron emitting material layer, and as a result, maintains the electron emission characteristics especially under high current density and improves the emission characteristics. This will prevent deterioration.
fiil基体と電子放射物質層との間に酸化スカンジウ
ム及び金属の混合層が介在していることにより電流密度
が向上し、これも上記特性向上に寄与する。The presence of the mixed layer of scandium oxide and metal between the fiil substrate and the electron emitting material layer improves the current density, which also contributes to the improvement of the above characteristics.
以上の如く本発明電子管用陰極は、主成分がニッケルか
らなる基体上に酸化スカンジウム及び鉄。As described above, the cathode for an electron tube of the present invention has scandium oxide and iron on a substrate mainly composed of nickel.
銅等の金属粉の混合物を被着させ、この上に少なくとも
バリウムを含むアルカリ土類金属酸化物を被着形成して
なるものであり、上記酸化スカンジウム及び金属粉層の
介在により基体と電子放射物質層との被着界面における
導電性が安定して維持され、かつ電流密度も向上し、そ
の結果特に2A/C−以上の高電流密度による動作の下
での長寿命を確実に実現できるという効果を有する。It is made by depositing a mixture of metal powder such as copper, and then depositing an alkaline earth metal oxide containing at least barium on top of this, and the interposition of the scandium oxide and metal powder layer creates a bond between the substrate and electron radiation. The conductivity at the adhered interface with the material layer is maintained stably, and the current density is also improved, making it possible to reliably achieve a long life, especially under operation at high current densities of 2A/C or more. have an effect.
第1図はこの発明の一実施例による電子管用陰極を示す
断面図、第2図は従来の電子管用陰極を示す断面図、第
3図は電子管用陰極を用いた2橿真空管の寿命試験時間
とエミッション電流との関係を示す図である。
なお各図中、同一符号は同−又は相当部分を示す。
第1図
第2図Fig. 1 is a sectional view showing a cathode for an electron tube according to an embodiment of the present invention, Fig. 2 is a sectional view showing a conventional cathode for an electron tube, and Fig. 3 is a life test time of a two-rod vacuum tube using the cathode for an electron tube. FIG. In each figure, the same reference numerals indicate the same or corresponding parts. Figure 1 Figure 2
Claims (1)
スカンジウムと、鉄、アルミニウム、チタン、ジルコニ
ウム、ハフニウム、ニオブ、タンタル、モリブデン、タ
ングステン、レニウム、オスミウム、イリジウム、白金
、パラジウム、ロジウム、金、バナジウム、クロム、マ
ンガン、銅、亜鉛、ビスマス、インジウム、シリコンの
少なくとも1種とを含む混合物層を被着し、さらにこの
第1層混合物層上に少なくともバリウムを含むアルカリ
土類金属酸化物を被着形成した電子放射物質層を備えた
ことを特徴とする電子管用陰極。Scandium oxide as a first layer on a substrate mainly composed of nickel, iron, aluminum, titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, rhenium, osmium, iridium, platinum, palladium, rhodium, gold, A mixture layer containing at least one of vanadium, chromium, manganese, copper, zinc, bismuth, indium, and silicon is deposited, and an alkaline earth metal oxide containing at least barium is further coated on the first mixture layer. A cathode for an electron tube, comprising a deposited electron emitting material layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1106307A JPH02288043A (en) | 1989-04-26 | 1989-04-26 | Cathode for electron tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1106307A JPH02288043A (en) | 1989-04-26 | 1989-04-26 | Cathode for electron tube |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02288043A true JPH02288043A (en) | 1990-11-28 |
Family
ID=14430342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1106307A Pending JPH02288043A (en) | 1989-04-26 | 1989-04-26 | Cathode for electron tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02288043A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030047054A (en) * | 2001-12-07 | 2003-06-18 | 삼성에스디아이 주식회사 | Metal cathode for electron tube and method of manufacturing the same |
RU2747505C1 (en) * | 2020-09-21 | 2021-05-06 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" имени Шокина") | Molecular-sprayed oxide cathode |
-
1989
- 1989-04-26 JP JP1106307A patent/JPH02288043A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030047054A (en) * | 2001-12-07 | 2003-06-18 | 삼성에스디아이 주식회사 | Metal cathode for electron tube and method of manufacturing the same |
RU2747505C1 (en) * | 2020-09-21 | 2021-05-06 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" имени Шокина") | Molecular-sprayed oxide cathode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4924137A (en) | Cathode for electron tube | |
JPS645417B2 (en) | ||
JPH02288043A (en) | Cathode for electron tube | |
JPS6288239A (en) | Cathode for electron tube | |
JPS62165832A (en) | Cathode for electron tube | |
JPH02288040A (en) | Cathode for electron tube | |
JPH02288042A (en) | Cathode for electron tube | |
JPH02288041A (en) | Cathode for electron tube | |
JPH0782800B2 (en) | Electron tube cathode | |
JPS6290820A (en) | Cathode for electron tube | |
JPS62165833A (en) | Cathode for electron tube | |
JPH0546652B2 (en) | ||
JPS6290821A (en) | Cathode for electron tube | |
JPH01213935A (en) | Cathode of electron tube | |
JPS6288241A (en) | Cathode for electron tube | |
JPH01235121A (en) | Cathode for electron tube | |
JPS6290819A (en) | Cathode for electron tube | |
JPH01267926A (en) | Cathode for electron tube | |
JPH01213932A (en) | Cathode of electron tube | |
JPH01225032A (en) | Cathode for electron tube | |
JPH01315926A (en) | Cathode for electron tube | |
JPS63231835A (en) | Cathode for electron tube | |
JPS63314741A (en) | Cathode for electron tube | |
JPH01213933A (en) | Cathode of electron tube | |
JPH02301930A (en) | Cathode for electron tube |