JPH02272732A - Semiconductor wafer processor - Google Patents
Semiconductor wafer processorInfo
- Publication number
- JPH02272732A JPH02272732A JP9464789A JP9464789A JPH02272732A JP H02272732 A JPH02272732 A JP H02272732A JP 9464789 A JP9464789 A JP 9464789A JP 9464789 A JP9464789 A JP 9464789A JP H02272732 A JPH02272732 A JP H02272732A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- chamber
- processing apparatus
- wafer processing
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000007788 liquid Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 abstract description 6
- 239000000428 dust Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 238000011282 treatment Methods 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 43
- 238000004140 cleaning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造装置に関し、特に半導体ウェ
ーハのエツチング、酸化及び洗浄等の化学処理する半導
体ウェーハ処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a semiconductor wafer processing apparatus for chemically processing semiconductor wafers such as etching, oxidation, and cleaning.
従来、この種の半導体ウェーハ処理装置は、半導体ウェ
ーハを保持し回転させる回転台と、この半導体ウェーハ
表面に液剤を滴下するノズルと、これらの機器及び半導
体ウェーハを収容するチャンバとから構成されている。Conventionally, this type of semiconductor wafer processing equipment consists of a rotating table that holds and rotates the semiconductor wafer, a nozzle that drops a liquid onto the surface of the semiconductor wafer, and a chamber that houses these devices and the semiconductor wafer. .
第3図は従来の一例を示す半導体ウェーハ処理装置の断
面図である。この半導体ウェーハ処理装置は、半導体ウ
ェーハ5を保持するチャックが取付けられた回転台4と
、この回転台4を回転する回転軸2と、この回転軸を保
持する軸受3と、半導体ウェーハ5の表面に薬液あるい
は純水を滴下するノズル8と、これら機構部を収納する
チャンバ1と、このチャンバ1を真空排気する排気管6
とを有している。FIG. 3 is a sectional view of a conventional semiconductor wafer processing apparatus. This semiconductor wafer processing apparatus includes a rotating table 4 to which a chuck for holding a semiconductor wafer 5 is attached, a rotating shaft 2 for rotating this rotating table 4, a bearing 3 for holding this rotating shaft, and a surface of the semiconductor wafer 5. a nozzle 8 for dropping a chemical solution or pure water into a container, a chamber 1 for housing these mechanical parts, and an exhaust pipe 6 for evacuating this chamber 1.
It has
通常、この半導体ウェーハ処理装置は、例えば、ノズル
8より薬液を回転している半導体ウェーハ5に滴下しウ
ェーハの化学的処理したり、あるいは、純水を滴下し洗
浄したりしていた。また、別の使い方として、例えば、
半導体ウェーハ5t−回転し半導体ウェーハ5を乾燥し
ていた。Normally, in this semiconductor wafer processing apparatus, for example, a chemical solution is dropped from a nozzle 8 onto a rotating semiconductor wafer 5 to chemically process the wafer, or pure water is dropped to clean the wafer. Also, as another usage, for example,
Semiconductor wafer 5t - The semiconductor wafer 5 was being rotated and dried.
しかしながら、上述した従来のウェーハ処理装置では、
半導体ウェーハを回転中に、半導体ウェーハが帯電し、
周囲からのごみを吸い付き易くするという欠点がある。However, in the conventional wafer processing equipment described above,
While rotating the semiconductor wafer, the semiconductor wafer becomes electrically charged.
The drawback is that it tends to attract dirt from the surrounding area.
本発明の目的は、半導体ウェーハにごみが付着しない半
導体ウェーハ処理装置を提供することにある。An object of the present invention is to provide a semiconductor wafer processing apparatus in which dust does not adhere to semiconductor wafers.
本発明の半導体ウェーハ処理装置は、半導体ウェーハを
保持し回転する回転台と、前記半導体ウェーハ表面に処
理液を滴下するノズルと、前記半導体ウェーハを積載す
る前記回転台及び前記ノズルを収容するチャンバとを有
する半導体ウェーハ処理装置において、前記チャンバ内
に帯電防止用ガスを放出する導入口を備え構成される。The semiconductor wafer processing apparatus of the present invention includes a rotating table that holds and rotates a semiconductor wafer, a nozzle that drops a processing liquid onto the surface of the semiconductor wafer, and a chamber that accommodates the rotating table that loads the semiconductor wafer and the nozzle. A semiconductor wafer processing apparatus having a semiconductor wafer processing apparatus includes an inlet for discharging antistatic gas into the chamber.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明による第1の実施例を示す半導体ウェー
ハ処理装置の断面図である。この半導体ウェーハ処理装
置は、チャンバ1の両側面に導入口であるスプレノズル
10を設け、このスプレノズル10に導入管9とバルブ
11を取り付けて、半導体ウェーハ処理中にチャンバ1
内に帯電防止用のガスを導入し、チャンバ内を帯電防止
用のガスを充満することである。それ以外は従来例と同
じである。FIG. 1 is a sectional view of a semiconductor wafer processing apparatus showing a first embodiment of the present invention. This semiconductor wafer processing apparatus is provided with spray nozzles 10 as introduction ports on both sides of a chamber 1, and an introduction pipe 9 and a valve 11 are attached to the spray nozzles 10.
This is to introduce an antistatic gas into the chamber and fill the chamber with the antistatic gas. Other than that, it is the same as the conventional example.
第2図は本発明による第2の実施例を示す半導体ウェー
ハ処理装置の断面図である。この半導体ウェーハ処理装
置は、帯電防止用のガスを導入するスプレノズル10a
をチャンバ1の上部に設け、帯電防止用ガスを半導体ウ
ェーハ5の表面上に覆うように吹き付けることである。FIG. 2 is a sectional view of a semiconductor wafer processing apparatus showing a second embodiment of the present invention. This semiconductor wafer processing apparatus includes a spray nozzle 10a that introduces antistatic gas.
is provided in the upper part of the chamber 1, and the antistatic gas is sprayed so as to cover the surface of the semiconductor wafer 5.
この実施例の場合は、第1の実施例に比べ、帯電防止用
ガスが節約が出来るという点が有利である。This embodiment has an advantage over the first embodiment in that the amount of antistatic gas can be saved.
半導体ウェーハ処理装置をこのような構造にすれば、チ
ャンバ1内で半導体ウェーハ5をエツチング、洗浄及び
乾燥などの処理するときに、チャンバ1内に帯電防止用
ガスを充満させ、帯電防止用ガス中で処理することによ
り、半導体ウェーハ5が帯電することが防止され、半導
体ウェーハ5に付着するごみを減少することが出来る。If the semiconductor wafer processing apparatus has such a structure, when the semiconductor wafer 5 is processed in the chamber 1 by etching, cleaning, drying, etc., the chamber 1 is filled with an antistatic gas, and the antistatic gas is filled with the antistatic gas. This treatment prevents the semiconductor wafer 5 from being electrically charged, and reduces dust adhering to the semiconductor wafer 5.
以上説明したように本発明は、半導体ウェーハに帯電防
止用ガスの雰囲気中で回転することによって、半導体ウ
ェーハにごみが付着しない半導体ウェーハ処理装置が得
られるという効果がある。As explained above, the present invention has the effect that a semiconductor wafer processing apparatus can be obtained in which dust does not adhere to the semiconductor wafer by rotating the semiconductor wafer in an atmosphere of antistatic gas.
第1図は本発明による第1の実施例を示す半導体ウェー
ハ処理装置の断面図、第2図は本発明による第2の実施
例を示す半導体ウェーハ処理装置の断面図、第3図は従
来の一例を示す半導体ウェーハ処理装置の断面図である
。
1・・・チャンバ、4・・・回転台、5・・・半導体ウ
ェーハ、8・・・ノズル、9.9a・・・導入管、10
.10a・・・スプレノズル、11、lla・・・バル
ブ。FIG. 1 is a cross-sectional view of a semiconductor wafer processing apparatus showing a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor wafer processing apparatus showing a second embodiment of the present invention, and FIG. FIG. 1 is a cross-sectional view of a semiconductor wafer processing apparatus showing an example. DESCRIPTION OF SYMBOLS 1... Chamber, 4... Turntable, 5... Semiconductor wafer, 8... Nozzle, 9.9a... Introducing pipe, 10
.. 10a...Spray nozzle, 11, lla...Valve.
Claims (1)
ウェーハ表面に処理液を滴下するノズルと、前記半導体
ウェーハを積載する前記回転台及び前記ノズルを収容す
るチャンバとを有する半導体ウェーハ処理装置において
、前記チャンバ内に帯電防止用ガスを放出する導入口を
設けたことを特徴とする半導体ウェーハ処理装置。A semiconductor wafer processing apparatus comprising: a rotating table that holds and rotates a semiconductor wafer; a nozzle that drops a processing liquid onto the surface of the semiconductor wafer; and a chamber that accommodates the rotating table that loads the semiconductor wafer and the nozzle; A semiconductor wafer processing apparatus characterized by having an inlet in a chamber for discharging an antistatic gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9464789A JPH02272732A (en) | 1989-04-14 | 1989-04-14 | Semiconductor wafer processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9464789A JPH02272732A (en) | 1989-04-14 | 1989-04-14 | Semiconductor wafer processor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02272732A true JPH02272732A (en) | 1990-11-07 |
Family
ID=14116051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9464789A Pending JPH02272732A (en) | 1989-04-14 | 1989-04-14 | Semiconductor wafer processor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02272732A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6792959B2 (en) * | 2001-05-30 | 2004-09-21 | S.E.S. Company Limited | Single wafer type cleaning method and apparatus |
-
1989
- 1989-04-14 JP JP9464789A patent/JPH02272732A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6792959B2 (en) * | 2001-05-30 | 2004-09-21 | S.E.S. Company Limited | Single wafer type cleaning method and apparatus |
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