JPH02269038A - Laminated material - Google Patents
Laminated materialInfo
- Publication number
- JPH02269038A JPH02269038A JP27189889A JP27189889A JPH02269038A JP H02269038 A JPH02269038 A JP H02269038A JP 27189889 A JP27189889 A JP 27189889A JP 27189889 A JP27189889 A JP 27189889A JP H02269038 A JPH02269038 A JP H02269038A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diamond
- aluminum nitride
- silicon carbide
- ceramic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002648 laminated material Substances 0.000 title claims abstract description 9
- 239000010432 diamond Substances 0.000 claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 28
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 241001137251 Corvidae Species 0.000 description 1
- 101100323029 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) alc-1 gene Proteins 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laminated Bodies (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、積層材及びそれのヒートシンクとしての用途
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a laminate and its use as a heat sink.
〔従来の技術及び発明が解決しようとする課題〕大規模
集積回路（ＬＳＩ）に伴う集積回路における半導体装置
の密度の増大は、大きな熱伝導率と良好な電気絶縁性と
を有するヒートシンク基材を用いることを要求する。[Prior art and problems to be solved by the invention] The increase in the density of semiconductor devices in integrated circuits accompanying large-scale integrated circuits (LSI) requires the use of heat sink substrates with high thermal conductivity and good electrical insulation. request that it be used.
これが、ＣＶＤ （化学気相成長）で堆積させたダイヤ
モンドの層を有する基材が既に提案された゛理由である
。グイ、ヤモンド層はあらゆる種類の基材上に効果的に
堆積させることができるとは限らないので、交互のダイ
ヤモンド及びＳｉＣ層を有する積層材が欧州特許出願公
開第２２１５３１号明細書で提案されている。一般にＳ
ｉＣはダイヤモンド層を堆積させるための最良の基礎基
材の一つである、ということは公知である。欧州特許出
願公開第２２１５３１号明細書によれば厚い均一なダイ
ヤモンド層を得るのは困難であるから、交互のＳｉＣ及
びダイヤモンド層を有する積層材を獲得することが有益
になる。This is why substrates with a layer of diamond deposited by CVD (chemical vapor deposition) have already been proposed. Since gouy and diamond layers cannot be deposited effectively on all kinds of substrates, a laminate with alternating diamond and SiC layers was proposed in EP-A-221,531. There is. Generally S
It is known that iC is one of the best basic substrates for depositing diamond layers. Since it is difficult to obtain a thick uniform diamond layer according to EP 221 531, it becomes advantageous to obtain a laminate with alternating SiC and diamond layers.
この技術の障害は、９０Ｗ／ｍ−にというＳｉＣの比較
的小さな熱伝導率、すなわちダイヤモンドのそそして厚
い均一なダイヤモンド層を達成するという問題に更に加
えて、堆積速度は一般に１廊／ｈの十分のいくつかに限
られ、それゆえたとえ堆積′が均一であってもダイヤモ
ンド層は非常に高くつくものになる。Obstacles to this technology are the relatively small thermal conductivity of SiC of 90 W/m, i.e. the relatively small thermal conductivity of diamond, and in addition to the problem of achieving thick and uniform diamond layers, the deposition rate is generally 1/h. only a few tenths of the diameter, and therefore even if the deposition is uniform, the diamond layer becomes very expensive.
これらのあらゆる理由から、ダイヤモンド及びセラミッ
クスの層を組み合わせて適当の経費で十分なだけの厚さ
と良好な層の均質性とを達成することが有益である。For all these reasons, it would be advantageous to combine diamond and ceramic layers to achieve sufficient thickness and good layer homogeneity at a reasonable expense.
本発明の目的は、積層材の熱伝導性を改良するための取
り合わせを提供することである。It is an object of the invention to provide an arrangement for improving the thermal conductivity of laminates.
〔課題を解決するための手段及び作用効果〕この発明の
別の目的は、焼結された炭化ケイ素の基礎基材、ダイヤ
モンド層及びセラミックス層を連続して含んでなる積層
材であって当該セラミックス層が窒化アルミニウムでで
きている積層材を提供することであり、そしてそれを集
積回路の製造にヒートシンクとして用いることである。[Means for Solving the Problems and Effects] Another object of the present invention is to provide a laminate material comprising a sintered silicon carbide base material, a diamond layer, and a ceramic layer in succession, the ceramic layer comprising: It is an object to provide a laminate material whose layers are made of aluminum nitride and to use it as a heat sink in the manufacture of integrated circuits.
セラミックス層として窒化アルミニウムを用いることは
、その熱伝導率が炭化ケイ素のそれの約２倍であるので
著しい改良である。炭化ケイ素の代りに窒化アルミニウ
ムを用いることは、ダイヤモンドは炭化ケイ素上には申
し分なく堆積するけれどもアルミニウムを含有している
全ての基材には標準的に非常に不完全に堆積することが
知られているため、自明のことではなかった。従って、
窒化アルミニウムがダイヤモンド上に申し分なく堆積す
るということは予想外であった。更に、窒化アルミニウ
ムの堆積速度はダイヤモンドのそれよりも約１００倍速
く、それゆえに良好な熱伝導率を有する比較的厚い層を
適当の値段で達成するこえ、堆積速度が約１００倍速い
からである。The use of aluminum nitride as the ceramic layer is a significant improvement since its thermal conductivity is approximately twice that of silicon carbide. The use of aluminum nitride in place of silicon carbide is advantageous since diamond is known to deposit satisfactorily on silicon carbide but typically very poorly on all aluminum-containing substrates. It was not self-evident. Therefore,
It was unexpected that aluminum nitride would deposit satisfactorily on diamond. Furthermore, the deposition rate of aluminum nitride is about 100 times faster than that of diamond, thus achieving relatively thick layers with good thermal conductivity at a reasonable cost, as well as the deposition rate being about 100 times faster. .
添付の図面は、本発明に伴う積層材を達成するために基
材上に層を堆積させるための反応器の態様を説明しそし
て模式的に例示する。The accompanying drawings describe and schematically illustrate embodiments of a reactor for depositing layers on a substrate to achieve a laminate according to the invention.
第１図により例示されるダイヤモンドを堆積させるだめ
の装置は、側壁２が両端を黄銅のキャップ３及び４でそ
れぞれ密封して閉鎖された二酸化ケイ素（ＳｉＯ□）の
管からなる円筒閉鎖容器１からなる反応器を含んでなる
。キャップ３には、閉鎖容器１を真空ポンプに接続する
ための管６を有する中央の開口５が含まれている。管２
の中には同軸上を回転するように垂直棒７が取付けられ
る。The apparatus for depositing diamonds, illustrated in FIG. It comprises a reactor. The cap 3 includes a central opening 5 with a tube 6 for connecting the enclosure 1 to a vacuum pump. tube 2
A vertical rod 7 is installed in the holder so as to rotate on the same axis.
その上端部には、被覆されるべき基材Ｓを保持するため
の二酸化ケイ素の支持体８がある。この棒７には、管６
の周りのリング１０を含んでなる磁気駆動装置に適合し
た磁気要素９も用意される。At its upper end there is a support 8 of silicon dioxide for holding the substrate S to be coated. This rod 7 has a tube 6
A magnetic element 9 is also provided which is adapted to a magnetic drive comprising a ring 10 around the .
閉鎖容′器１の円筒部分２は、抵抗発熱体１１に取巻か
れる。キャップ４にも、該閉鎖容器をメタン及び水素の
源に接続する管１３のための軸線方向の開口１２が含ま
れている。キャップ１４はまた、発電機１６からタンタ
ルのフィラメン）Ｔへ電力を供給する２本の電線１５を
絶縁するために、例えばテフロン（商標）の二つの絶縁
体１４をも含んでなる。The cylindrical part 2 of the closed vessel 1 is surrounded by a resistive heating element 11. The cap 4 also includes an axial opening 12 for a tube 13 connecting the enclosure to a source of methane and hydrogen. The cap 14 also comprises two insulators 14, for example Teflon™, to insulate the two electrical wires 15 supplying power from the generator 16 to the tantalum filament T.
第２図の反応器は窒化アルミニウム層を堆積させるため
のものであって、一方では真空ポンプ（図示せず）へ管
１８により接続され、そして他方では管１９によりＨｉ
＋ＮＨ３の源と管２０によりＨ２のもう一つの源とに
接続される閉鎖容器１７を含んでなる。この管２０には
、ＡｌＣ１，供給原料２１と加熱流体のための人口２３
及び出口２４を有する加熱マントル２２とが用意される
。閉鎖容器１７の内部には基材Ｓを保持するためのステ
ンレス鋼の支持体２５が配置され、そ七て閉鎮容器１７
はその基材を高周波誘導により加熱するため高周波コイ
ル２６により取巻かれる。The reactor of FIG. 2 is for depositing an aluminum nitride layer and is connected on the one hand by a tube 18 to a vacuum pump (not shown) and on the other hand by a tube 19 to a Hi
+NH3 and a closed vessel 17 connected by a tube 20 to another source of H2. This tube 20 contains AlC 1, feedstock 21 and a population 23 for heating fluid.
and a heating mantle 22 having an outlet 24. A stainless steel support 25 for holding the substrate S is disposed inside the closed container 17, and the closed container 17
is surrounded by a high frequency coil 26 to heat the substrate by high frequency induction.
例１ この例では、密度が３．０７ｇ／ｃｄであって（Ｂ。 Example 1 In this example, the density is 3.07 g/cd (B.
Ｃ）添加成分を含有している焼結炭化ケイ素基材上に窒
化アルミニウム／ダイヤモンドの二つの組み合わせを堆
積させる。この焼結基材は、直径１６鮒及び厚さ１ｍｏ
＋の円盤の形をしており、その表面粗さＲａ＝０．４−
である。C) Depositing the aluminum nitride/diamond dual combination onto a sintered silicon carbide substrate containing additive components. This sintered base material has a diameter of 16 mm and a thickness of 1 mo.
It has the shape of a positive disk, and its surface roughness Ra = 0.4-
It is.
ダイヤモンドを堆積させるために、上記の炭化ケイ素円
盤を第１図の支持体８の上に置き、そして閉鎖容器１に
管１３を通して２０ ａｌ ／ｍ ｉ ｎのＨｚ ＋１
％ＣＨ４を供給する。このガス混合物は、抵抗発熱体１
１により８４０℃に加熱される基材表面から約１０ｍｍ
離れており且つ２０００℃にされた熱いタンタルフィラ
メントによって活性化される。反応器内部の圧力は２
ｋＰａであり、また堆積の期間は１９時間である。得ら
れるダイヤモンド層は５＃Ｉの厚さである。To deposit the diamond, the silicon carbide disk described above is placed on the support 8 of FIG.
%CH4. This gas mixture is added to the resistive heating element 1
Approximately 10 mm from the surface of the substrate heated to 840°C by 1.
It is activated by a hot tantalum filament that is separate and brought to 2000°C. The pressure inside the reactor is 2
kPa and the duration of the deposition is 19 hours. The resulting diamond layer is 5#I thick.
その後、この被覆基材を窒化アルミニウム層を堆積させ
るため第２図に示された閉鎖容器１７に入れる。This coated substrate is then placed in a closed vessel 17 shown in FIG. 2 for depositing the aluminum nitride layer.
Ｈ２＋２％ＡｌＣｌ、の混合物を１００ｃ＋ｆ／ｍｉｎ
の速度で管２０を通して導入し、モしてＨ２＋１％ＮＨ
。A mixture of H2 + 2% AlCl at 100c + f/min
H2 + 1% NH was introduced through tube 20 at a rate of
.
の混合物を４００ｃ＋ｆ／ｍｉｎの速度で管１９を通し
て導入する。基材はコイル２６で８４０℃に加熱される
。is introduced through tube 19 at a rate of 400 c+f/min. The substrate is heated to 840° C. by coil 26.
反応器の圧力は６．６５ｋＰａであり、操作は１０分間
実施されて、その結果としてダイヤモンドの上に窒化ア
ルミニウムの５ｍの層ができる。The reactor pressure is 6.65 kPa and the operation is carried out for 10 minutes, resulting in a 5 m layer of aluminum nitride on top of the diamond.
先に述べたように、窒化アルミニウム上にダイヤモンド
の層をもう一つ形成するのは非常に困難であるから、新
しいダイヤモンド層を適用する前に窒化アルミニウム層
の上へ炭化ケイ素の薄い中間層を堆積させる。このため
に、第２図の反応器の別形（第３図参照）を使用し、そ
してこの別形においては、供給管２０はアルゴン源につ
ながれ、そしてアルゴンは液体のジメチルクロロシラン
を入れた壜２７を通してバブリングされて、そのアルゴ
ンガスによりジメチルクロロシランの蒸気が運ばれる。As mentioned earlier, it is very difficult to form another layer of diamond on aluminum nitride, so a thin intermediate layer of silicon carbide is applied over the aluminum nitride layer before applying the new diamond layer. deposit For this purpose, a variant of the reactor according to FIG. 2 (see FIG. 3) is used, and in this variant the feed pipe 20 is connected to a source of argon, and the argon is connected to a bottle containing liquid dimethylchlorosilane. 27, the argon gas carries dimethylchlorosilane vapor.
水素は管１９によって供給される。この層の厚さは約０
．１〜５烏でよい。Hydrogen is supplied by pipe 19. The thickness of this layer is approximately 0
．． 1 to 5 crows is sufficient.
例２
最初のダイヤモンド／窒化アルミニウムの組を例１のと
ふりに堆積させ、続いて次に述べる条件下で炭化ケイ素
の層を堆積させる。Example 2 A first diamond/aluminum nitride pair is deposited on the top of Example 1, followed by a layer of silicon carbide under the conditions described below.
管１９及び２０を通る合計流量は５００ｃａｆ／ｍｉｎ
であって、これは０．８％のＭｅ２ＳｉＣ１，，５％の
Ｈ２及び９４．２％のＡｒの混合物である。基材の温度
は１０２０℃、そして反応器の内部圧力は１３．３ｋＰ
ａである。Total flow rate through pipes 19 and 20 is 500 caf/min
, which is a mixture of 0.8% Me2SiCl, 5% H2 and 94.2% Ar. The temperature of the substrate is 1020℃, and the internal pressure of the reactor is 13.3kP.
It is a.
堆積操作は３０分継続し、また炭化ケイ素層の厚さは２
−である。The deposition operation lasted 30 minutes and the thickness of the silicon carbide layer was 2
− is.
次いで、例１で述べたようにこの薄い炭化ケイ素層の上
でダイヤモンド及び窒化アルミニウムの堆積を繰り返す
ことができる。そして所望されるだけ何回も上記の操作
全体を、各回ごとに窒化アルミニウム層とダイヤモンド
層との間に炭化ケイ素の薄い中間層を配置しながら繰り
返すことができる。The diamond and aluminum nitride deposition can then be repeated on this thin silicon carbide layer as described in Example 1. The entire operation described above can then be repeated as many times as desired, each time placing a thin intermediate layer of silicon carbide between the aluminum nitride layer and the diamond layer.
【図面の簡単な説明】
第１図は、ダイヤモンドを堆積させるために用いられる
反応器の断面図である。
第２図は、窒化アルミニウムを堆積させるための反応器
の断面図である。
第３図は、第２図の反応器の別形の部分断面図である。
図中、１は閉鎖容器、８は支持体、１１は抵抗発熱体、
１７は閉鎖容器、２１は窒化アルミニウム供給原料、２
５は支持体、２６は高周波コイル、Ｓは基材、Ｔはタン
タルフィラメント。
図面の浄書く内容に変更なしン
手
続
補
正
書（方式）
事件の表示
平成１年特許願第２７
１８９８号
λ
発明の名称
積
層
材
ふ
補正をする者
事件との関係BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a reactor used to deposit diamond. FIG. 2 is a cross-sectional view of a reactor for depositing aluminum nitride. FIG. 3 is a partial cross-sectional view of an alternative version of the reactor of FIG. 2; In the figure, 1 is a closed container, 8 is a support, 11 is a resistance heating element,
17 is a closed container, 21 is an aluminum nitride feedstock, 2
5 is a support, 26 is a high-frequency coil, S is a base material, and T is a tantalum filament. Procedural amendment (method) with no change to the content of the drawings Indication of the case 1999 Patent Application No. 27 1898 λ Name of the invention Laminated material Person who makes the amendment Relationship to the case
Claims (1)
及びセラミックス層を連続して含んでなる積層材であっ
て、当該セラミックス層が窒化アルミニウムの層である
ことを特徴とする上記の積層材。 ２、炭化ケイ素の中間結合層の上に堆積した少なくとも
もう一組のダイヤモンド／窒化アルミニウム層を更に含
んでなることを特徴とする、請求項１記載の積層材。 ３、集積回路の製造にヒートシンクとして用いられる、
請求項１記載の積層材。[Claims] 1. A laminated material comprising a sintered silicon carbide base material, a diamond layer, and a ceramic layer in succession, characterized in that the ceramic layer is an aluminum nitride layer. and the above laminated materials. 2. The laminate of claim 1, further comprising at least one diamond/aluminum nitride layer deposited on the intermediate bonding layer of silicon carbide. 3. Used as a heat sink in the manufacture of integrated circuits,
The laminate material according to claim 1.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH3931/88-2 | 1988-10-21 | ||
| CH393188A CH675997A5 (en) | 1988-10-21 | 1988-10-21 | Thermo-conductive sintered silicon carbide laminate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02269038A true JPH02269038A (en) | 1990-11-02 |
| JP2683115B2 JP2683115B2 (en) | 1997-11-26 |
Family
ID=4266574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1271898A Expired - Lifetime JP2683115B2 (en) | 1988-10-21 | 1989-10-20 | Laminated material |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2683115B2 (en) |
| CH (1) | CH675997A5 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113400734A (en) * | 2020-03-16 | 2021-09-17 | 北京电子工程总体研究所 | High-temperature-resistant heat-insulating material-proof integrated structure based on precursor conversion ceramic and manufacturing method and application thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057993A (en) * | 1983-09-09 | 1985-04-03 | 住友電気工業株式会社 | Circuit board for placing semiconductor element |
| EP0221531A3 (en) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | High heat conductive insulated substrate and method of manufacturing the same |
| US5373171A (en) * | 1987-03-12 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Thin film single crystal substrate |
| DE3709200A1 (en) * | 1987-03-20 | 1988-09-29 | Heraeus Gmbh W C | Electronic component |
-
1988
- 1988-10-21 CH CH393188A patent/CH675997A5/en not_active IP Right Cessation
-
1989
- 1989-10-20 JP JP1271898A patent/JP2683115B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113400734A (en) * | 2020-03-16 | 2021-09-17 | 北京电子工程总体研究所 | High-temperature-resistant heat-insulating material-proof integrated structure based on precursor conversion ceramic and manufacturing method and application thereof |
| CN113400734B (en) * | 2020-03-16 | 2024-05-07 | 北京电子工程总体研究所 | High-temperature-resistant heat-proof and heat-insulating material integrated structure based on precursor conversion ceramic, and manufacturing method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CH675997A5 (en) | 1990-11-30 |
| JP2683115B2 (en) | 1997-11-26 |
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