JPH0226784B2 - - Google Patents

Info

Publication number
JPH0226784B2
JPH0226784B2 JP55095052A JP9505280A JPH0226784B2 JP H0226784 B2 JPH0226784 B2 JP H0226784B2 JP 55095052 A JP55095052 A JP 55095052A JP 9505280 A JP9505280 A JP 9505280A JP H0226784 B2 JPH0226784 B2 JP H0226784B2
Authority
JP
Japan
Prior art keywords
shield
removable
ultraviolet
film
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55095052A
Other languages
Japanese (ja)
Other versions
JPS5720454A (en
Inventor
Yoshiro Nakamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9505280A priority Critical patent/JPS5720454A/en
Publication of JPS5720454A publication Critical patent/JPS5720454A/en
Publication of JPH0226784B2 publication Critical patent/JPH0226784B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/18Circuits for erasing optically

Landscapes

  • Non-Volatile Memory (AREA)

Description

【発明の詳細な説明】 本発明は、書き込まれたデータを紫外線により
消去する半導体記憶メモリを有するPROM又は
EPROMに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a PROM or
It is about EPROM.

EPROMは、多数の微細な半導体記憶素子に電
荷を与えてメモリとして使用し、紫外線によりこ
の電荷をなくしてイレースするのであるが、電荷
を与えられた半導体素子は、わづかの外光でもそ
の中の紫外光により電荷がなくなり、折角の書き
込みが失なわれ、これは取扱上の大きな隘路にな
つていた。
EPROM uses a large number of microscopic semiconductor storage elements as a memory by applying electric charge to them, and erases this electric charge using ultraviolet rays. The charge was lost due to the ultraviolet light, and the writing was lost, which was a major bottleneck in handling.

本発明は光消去型半導体メモリのプログラムウ
インドウ開口部にリムーバルな紫外線遮断シール
ドを設けるものである。
The present invention provides a removable ultraviolet shield at the program window opening of a photo-erasable semiconductor memory.

本発明の実施例を図面について説明すると、第
1図および第2図に示すごとく、半導体記憶メモ
リ1を収容したケース2に、メモリ1に電荷を与
えるための通電用コネクタピン3と、メモリ1に
紫外光8を照射して書き込みを消去するための通
光窓4を設けるとともに、窓4をおおうように着
脱自在の紫外線遮断体5を設けた本発明EPROM
を示す。
Embodiments of the present invention will be described with reference to the drawings. As shown in FIGS. 1 and 2, a case 2 housing a semiconductor memory 1 includes a conductive connector pin 3 for supplying electric charge to the memory 1, and a case 2 that houses a semiconductor memory 1. The EPROM of the present invention is provided with a light passing window 4 for erasing writing by irradiating it with ultraviolet light 8, and a removable ultraviolet shield 5 is provided to cover the window 4.
shows.

紫外線遮断体5は、とくに紫外線8を遮断する
特性を付与したシールド6を、感圧性でリムーバ
ルな接着剤7により窓4すなわちプログラムウイ
ンドウ開口部をおおうようにその周辺に接着す
る。
In the ultraviolet shield 5, a shield 6 having a property of specifically blocking ultraviolet rays 8 is adhered to the periphery of the window 4, that is, the program window opening, using a pressure-sensitive removable adhesive 7.

紫外線遮断シールド6は、例えばメチルメタア
クリレートを主成分とし、アクリル系モノマーを
共重合した透明又は不透明のフレキシブルなフイ
ルムであり、接着剤7はポリイソブチレン、ポリ
ブテン、ポリビニルエーテル、アクリル酸エステ
ル共重合体などから成る固化しないリムーバルな
感圧性接着剤であり、しかも窓4周辺にフイルム
6を必要に応じて接着し、あるいは引き剥しうる
ものであり、イレースの場合はフイルム6を引き
剥して窓4より紫外光線を半導体記録素子1に照
射してイレースする。
The ultraviolet shield 6 is, for example, a transparent or opaque flexible film made of methyl methacrylate as a main component and copolymerized with an acrylic monomer, and the adhesive 7 is made of polyisobutylene, polybutene, polyvinyl ether, or acrylic acid ester copolymer. It is a removable pressure-sensitive adhesive that does not harden, and can be used to adhere or peel off the film 6 around the window 4 as necessary.In the case of erasing, the film 6 can be peeled off and removed from the window 4. Erasing is performed by irradiating the semiconductor recording element 1 with ultraviolet light.

第3図は、本発明者がこのシールドフイルム6
の紫外線遮蔽性を実験した結果を示すもので、太
陽光を5000時間照射した後のシールドフイルム6
の各波長における光透過率を示す。このシールド
フイルム6で窓4をおおい、接着剤7で密封する
ことにより窓4からの紫外光線を完全に遮断する
ことができる。
FIG. 3 shows the shield film 6
This shows the results of an experiment on the UV shielding properties of shielding film 6 after 5000 hours of sunlight irradiation.
The light transmittance at each wavelength is shown. By covering the window 4 with the shield film 6 and sealing it with the adhesive 7, ultraviolet rays from the window 4 can be completely blocked.

第4図は、各種材料に高圧水銀灯を照射したと
きの引張り強さの変化を示すもので、照射1000時
間において他の材料の引張り強さは激減している
にも拘らず紫外線遮断シールドフイルム6につい
ては全く変らず劣化しないので、イレースの際の
フイルム6の引剥し、接着を繰返しても破損する
ことなく耐久性がきわめて高い。
Figure 4 shows the changes in tensile strength when various materials are irradiated with a high-pressure mercury lamp. Although the tensile strength of other materials decreased dramatically after 1000 hours of irradiation, the ultraviolet blocking shield film 6 Since the film 6 does not change or deteriorate at all, it is extremely durable without being damaged even if the film 6 is repeatedly peeled off and bonded during erasing.

上記のように、本発明におけるシールドフイル
ム6は、とくに紫外光線に対する遮断性および耐
久性においてきわめて秀れたものであるから、こ
れをEPROM又はPROMの窓4に剥離可能に接
着すれば半導体素子1が外光の影響を全く受けな
いのみならず、イレースの際の接着、引き剥しの
繰返しに対し破損なく、しかも接着材が除去再使
用可能な感圧性であり、紫外光線から半導体素子
を保護するだけでなく、必要とあらばシールドを
一時除去しプログラムをイレースや再プログラム
した後、再びシールドして保護できる。
As mentioned above, the shielding film 6 of the present invention is extremely excellent in its blocking properties and durability, especially against ultraviolet rays, so if it is removably adhered to the window 4 of the EPROM or PROM, the semiconductor element 1 Not only is it completely unaffected by external light, it is also pressure-sensitive so that it will not be damaged by repeated adhesion and peeling during erasing, and the adhesive can be removed and reused, protecting semiconductor elements from ultraviolet rays. Not only that, but if necessary, you can temporarily remove the shield, erase or reprogram the program, and then shield it again to protect it.

本発明によれば、EPROMの半導体記憶素子へ
の外光中の紫外光線の透過、洩光を遮断するの
で、長期保存や室内螢光燈により書き込まれたプ
ログラムが消滅するなどの事故を防ぎ、素子又は
機器の機能を安全確実に保つことができる。
According to the present invention, the transmission and leakage of ultraviolet rays in external light to the semiconductor memory element of the EPROM are blocked, thereby preventing accidents such as long-term storage or erasure of written programs due to indoor fluorescent lights. The functions of elements or equipment can be maintained safely and reliably.

また、紫外線遮断フイルムはフレキシブルでリ
ムーバルに接着され、劣化して強度が低下しない
ので、プログラムの書き込みやイレースの繰返し
にともなう接着、剥離の取扱いが頗る容易であり
耐久性がある等幾多の著効を得ることができる。
In addition, the UV-blocking film is flexible and removably adhered, and does not deteriorate or lose its strength, so it has many advantages such as being easy to adhere and peel when repeatedly writing programs and erasing, and being durable. can be obtained.

本発明は、上記のごとくPROM素子の開孔部
にリムーバルな紫外線遮断シールドを行つたもの
のほか、PROM素子を用いた装置全体の上から
リムーバブルな紫外線遮断シールドを行つたもの
も本発明に含まれるものである。
In addition to providing a removable ultraviolet blocking shield in the opening of the PROM element as described above, the present invention also includes a device in which a removable ultraviolet blocking shield is provided over the entire device using the PROM element. It is something.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明実施例を示す斜視図。第2図は
本発明実施例で、第1図の一部断面をあらわす側
面図。第3図も本発明実施例で、紫外線遮断シー
ルド特性を示すカーブ。第4図は本発明実施例
で、紫外線遮断シールドの強度特性を示すカー
ブ。 4……プログラムウインドウ開口部、6……紫
外線遮断シールド。
FIG. 1 is a perspective view showing an embodiment of the present invention. FIG. 2 is a side view showing a partial cross section of FIG. 1, showing an embodiment of the present invention. FIG. 3 is also an example of the present invention, and shows a curve showing the ultraviolet shielding characteristics. FIG. 4 is a curve showing the strength characteristics of an ultraviolet blocking shield according to an embodiment of the present invention. 4...Program window opening, 6...UV blocking shield.

Claims (1)

【特許請求の範囲】[Claims] 1 メチルメタアクリレートを主成分とし、アク
リル系モノマーを共重合した紫外線を遮断するフ
レキシブルシートを、リムーバルな感圧性接着剤
で反覆着脱自在にプログラムウインドウ開口部を
密閉した事を特徴とする光消去型半導体メモリ。
1 A light-erasable type that features a flexible sheet that blocks ultraviolet rays and is made of methyl methacrylate as a main component and copolymerized with acrylic monomers, and the program window opening is sealed in a removable and removable manner by covering it with a removable pressure-sensitive adhesive. semiconductor memory.
JP9505280A 1980-07-14 1980-07-14 Durable and stable prom Granted JPS5720454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9505280A JPS5720454A (en) 1980-07-14 1980-07-14 Durable and stable prom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9505280A JPS5720454A (en) 1980-07-14 1980-07-14 Durable and stable prom

Publications (2)

Publication Number Publication Date
JPS5720454A JPS5720454A (en) 1982-02-02
JPH0226784B2 true JPH0226784B2 (en) 1990-06-12

Family

ID=14127277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9505280A Granted JPS5720454A (en) 1980-07-14 1980-07-14 Durable and stable prom

Country Status (1)

Country Link
JP (1) JPS5720454A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4519050A (en) * 1982-06-17 1985-05-21 Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
AU591540B2 (en) 1985-12-28 1989-12-07 Konishiroku Photo Industry Co., Ltd. Method of processing light-sensitive silver halide color photographic material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533019A (en) * 1978-08-28 1980-03-08 Mitsubishi Electric Corp Light-erased semiconductor memory
JPS5520224B2 (en) * 1976-03-16 1980-05-31

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734768Y2 (en) * 1978-07-24 1982-07-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520224B2 (en) * 1976-03-16 1980-05-31
JPS5533019A (en) * 1978-08-28 1980-03-08 Mitsubishi Electric Corp Light-erased semiconductor memory

Also Published As

Publication number Publication date
JPS5720454A (en) 1982-02-02

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