JPH02260500A - Electromagnetic wave shielding tape - Google Patents
Electromagnetic wave shielding tapeInfo
- Publication number
- JPH02260500A JPH02260500A JP7802089A JP7802089A JPH02260500A JP H02260500 A JPH02260500 A JP H02260500A JP 7802089 A JP7802089 A JP 7802089A JP 7802089 A JP7802089 A JP 7802089A JP H02260500 A JPH02260500 A JP H02260500A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous alloy
- foil
- shielding
- plating
- metal foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 24
- 239000011888 foil Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 14
- 230000035699 permeability Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 5
- 229910052697 platinum Inorganic materials 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- KCYJMWPVYGWYAF-UHFFFAOYSA-N iron phosphanylidynecobalt Chemical compound [Fe].[Co]#P KCYJMWPVYGWYAF-UHFFFAOYSA-N 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
電子機器などより放射される電磁波など、特に磁場に起
因して生ずる電磁波障害をシールドすることができる電
磁波しゃへい構造物を提供することにある。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] An object of the present invention is to provide an electromagnetic shielding structure capable of shielding electromagnetic interference caused by magnetic fields, such as electromagnetic waves radiated from electronic devices and the like.
電子機器の応用拡大にともない、これら機器より発生す
る電磁波の障害対策をたてることが必要となってきた。As the applications of electronic devices expand, it has become necessary to take measures against interference with electromagnetic waves generated by these devices.
このため電子機器あるいはその周辺機器部品などに対す
る電磁波しゃへい対策として、銅やアルミニウムまたは
ニッケル、鉄、しんちゅうなどの粉末や短繊維、フレー
クなどを合成樹脂に混和したものを所要の形状に形成し
て電子機器を覆い、電磁波をしゃへいする方法が考案さ
れ、応用されている。しかし銅やアルミニウムは電場を
しゃへいする効果はあるが、透磁率が低く、磁場じゃへ
い効果はない。Therefore, as a measure against electromagnetic waves for electronic devices and their peripheral equipment parts, powders, short fibers, flakes, etc. of copper, aluminum, nickel, iron, brass, etc. are mixed with synthetic resin and formed into the desired shape. Methods have been devised and applied to cover electronic equipment and shield it from electromagnetic waves. However, although copper and aluminum have the effect of shielding electric fields, they have low magnetic permeability and have no magnetic field shielding effect.
これに対し、ニッケルや鉄などは磁性体であるため磁場
しゃへい効果はあるが、電場じゃへい効果は低い。On the other hand, since nickel and iron are magnetic materials, they have a magnetic field shielding effect, but have a low electric field shielding effect.
本発明は電磁波じゃへい効果に対して銅、アルミニウム
などの欠点である透磁率が小さいという点に改良を施す
と共に、電場、磁場のいずれに対しても高いしゃへい効
果を有する電磁波じゃへい材を提供するものである。The present invention improves the low magnetic permeability, which is a drawback of copper and aluminum, and provides an electromagnetic shielding material that has a high shielding effect against both electric and magnetic fields. It is something to do.
現在種々の電磁波しゃへい材料が開発され応用されてい
るが、電場、磁場の両方を広い周波数帯域でじゃへいす
る有効な方法は少ない。Currently, various electromagnetic wave shielding materials are being developed and applied, but there are few effective methods for blocking both electric and magnetic fields over a wide frequency band.
銅、アルミニウム、銀などは良導体であり、すなわち電
磁波特に電界波のしゃへい効果が掻めて高い材料である
ことは以前から注目されており、実際に電磁波シールド
材料として実用化されているが、磁界波のしゃへい効果
は殆どない。これは磁性材料としての特性である透磁率
、飽和磁化などがないためである。It has long been noted that copper, aluminum, silver, etc. are good conductors, that is, they are highly effective materials for shielding electromagnetic waves, especially electric field waves, and have actually been put into practical use as electromagnetic shielding materials. There is almost no wave shielding effect. This is because it does not have magnetic permeability, saturation magnetization, etc., which are characteristics of magnetic materials.
本発明者らは銅箔などの良導体に軟磁性特性を付与する
ことを目的として検討中のところ、透磁率の高い非晶質
合金を銅箔などの表面にめっきなどの方法を用いて被覆
することにより電場および磁場のしゃへい効果が共に優
れた電磁波じゃへい材を得ることに成功した。The present inventors are currently investigating the possibility of imparting soft magnetic properties to good conductors such as copper foil, and are considering coating the surface of copper foil with an amorphous alloy with high magnetic permeability using a method such as plating. As a result, we succeeded in obtaining an electromagnetic shielding material with excellent shielding effects for both electric and magnetic fields.
本発明は銅、アルミニウムなどの良導電体に磁気特性に
優れる非晶質合金薄膜を電気めっき法にて形成すること
により特に磁気遮へい効果の高い電磁波シールド材料を
提供することにある。The object of the present invention is to provide an electromagnetic shielding material that has a particularly high magnetic shielding effect by forming an amorphous alloy thin film with excellent magnetic properties on a good conductor such as copper or aluminum by electroplating.
本発明による非晶質合金の形成はめっき法によるもので
ある。めっきは導電性材料表面ならばいかなる場所にも
施すことができる。Formation of the amorphous alloy according to the present invention is by a plating method. Plating can be applied to any surface of a conductive material.
本発明のテープを構成する非晶質合金層を形成せしめる
金属としては、鉄、コバルト、ニッケル、クロム、金、
銅、アルミニウム、チタン、テルル、銀、白金、亜鉛、
錫、鉛といったものが挙げられ、電析可能なものならば
何でも用いることができる。また単独では電析できない
とされるタングステンやニオブも、鉄族元素との誘起共
析により導体として用いることができる。The metals forming the amorphous alloy layer constituting the tape of the present invention include iron, cobalt, nickel, chromium, gold,
Copper, aluminum, titanium, tellurium, silver, platinum, zinc,
Examples include tin and lead, and anything that can be electrolytically deposited can be used. Furthermore, tungsten and niobium, which cannot be deposited alone, can also be used as conductors by induced eutectoid deposition with iron group elements.
これらの金属成分のうち鉄族元素を主成分とする非晶質
合金は高透磁率、高磁束密度、低保磁力といった優れた
軟磁性的性質を示し、磁気遮へい材料としての特性を効
果的に発揮しうるので好しいものである。Among these metal components, amorphous alloys mainly composed of iron group elements exhibit excellent soft magnetic properties such as high magnetic permeability, high magnetic flux density, and low coercive force, and have effective properties as magnetic shielding materials. This is preferable because it can be used effectively.
本発明において、特に磁気シールド特性に注目する場合
には非晶質合金薄膜被覆材としては鉄またはコバルト基
系が好ましい。In the present invention, particularly when attention is paid to magnetic shielding properties, iron or cobalt-based materials are preferred as the amorphous alloy thin film coating material.
良導電性金属箔を浸漬し、該金属箔を陰極とし、白金な
どを陽極として電圧を印加することにより金属箔上に非
晶質合金を電析することができる。非晶化のためにはめ
っき浴中に次亜りん酸ナトリウムなどの次亜りん酸塩を
０．０２〜０．５ｍｏｌｊｌ！／ｌ加え電析を行うこと
が好ましい。これにより例えばＣｏ／Ｆｅ系の電析膜中
にりんが５〜２０ａｔ％混入し、非晶質化する。An amorphous alloy can be electrodeposited onto the metal foil by dipping a highly conductive metal foil and applying a voltage using the metal foil as a cathode and platinum or the like as an anode. For amorphization, add 0.02 to 0.5 moljl of hypophosphite such as sodium hypophosphite in the plating bath! It is preferable to perform electrodeposition by adding /l. As a result, for example, 5 to 20 at % of phosphorus is mixed into the Co/Fe-based deposited film, making it amorphous.
金属箔を陰極として電気めっきを行った場合、原理的に
箔の両面にめっき層が形成されるが、対極である陽極を
片面に接近して配置すると、金属箔の片面（陽極と対待
している面）に選択的に非晶質合金を電析させることが
てきる。完全に片面だけに電析させるためには、金属箔
の片面を絶縁体（プラスティックフィルムや紙など）で
保護してやればよい。また、めっき中に磁場を印加して
磁気特性を改善することもできる。このようにしてめっ
きされたテープ状物は熱処理を施すことによって非晶質
合金層の磁気特性を改善することができる。また、場合
によっては磁場中で熱処理することも有効である。When electroplating is performed using metal foil as a cathode, in principle a plating layer is formed on both sides of the foil, but if the anode, which is the counter electrode, is placed close to one side, a plating layer is formed on one side of the metal foil (facing the anode). It is possible to selectively deposit an amorphous alloy on the surface of the surface. To ensure complete electrodeposition on only one side, protect one side of the metal foil with an insulator (plastic film, paper, etc.). Additionally, magnetic properties can be improved by applying a magnetic field during plating. The magnetic properties of the amorphous alloy layer can be improved by subjecting the thus plated tape-like material to heat treatment. In some cases, heat treatment in a magnetic field is also effective.
非晶質合金層の膜厚は、数十人から数百−まで変化させ
ることができるが、これはめっき時間に依存する。磁気
シールド効果はめっき合金層の厚みに比例するが、本発
明の場合２０−以下が望ましい。２０７５１以上になる
とめっき合金層が曲げ応力に対して割れ易くなり好まし
くない、また、めっき時間も長くなり、生産性が悪くな
る。本発明の場合合金層の比透磁率は１ｋＨｚ、１００
０Ｇの磁束密度で少なくとも１０４、好ましくは２Ｘ１
０’の特性を有するため、２０−以下の膜厚で十分であ
る。高度な磁気シールドを要請される用途には本発明の
テープを２枚以上積層して用いればよい。The thickness of the amorphous alloy layer can vary from tens to hundreds of layers, depending on the plating time. The magnetic shielding effect is proportional to the thickness of the plating alloy layer, and in the case of the present invention, the thickness is preferably 20 or less. If it exceeds 20751, the plating alloy layer tends to crack under bending stress, which is undesirable, and the plating time also increases, resulting in poor productivity. In the case of the present invention, the relative magnetic permeability of the alloy layer is 1kHz, 100
At least 104, preferably 2X1 at 0G flux density
Since the film has a characteristic of 0', a film thickness of 20 or less is sufficient. For applications requiring a high degree of magnetic shielding, two or more tapes of the present invention may be used in a stacked manner.
次に被めっき体である良導電性金属箔テープについて述
べる。被めっき体は、導電性を有するものであれば何で
も用いることができるが、１００μΩ１以上の比抵抗体
ではめっきの膜厚に場所むらが生じたり、電析速度が遅
くなるなど問題点が起こる場合がある。良導電性金属箔
テープの比抵抗は１０μΩ１以下であることが望ましい
。さらに好ましくは５μΩＣ１であることが望ましい。Next, the highly conductive metal foil tape to be plated will be described. Any material to be plated can be used as long as it has conductivity; however, a resistivity material of 100μΩ1 or more may cause problems such as uneven plating thickness or slow deposition rate. There is. It is desirable that the specific resistance of the highly conductive metal foil tape is 10 μΩ1 or less. More preferably, it is 5 μΩC1.
また、十分な導電性を保持するためには３〇−以上さら
には５〇−以上の厚さの良導電性金属箔を用いることが
望ましい。このように低抵抗の金属箔、例えば銀および
銅箔上に非晶質合金をめっきした場合には均一膜厚の非
晶質合金層を速やかに得ることができる。Further, in order to maintain sufficient conductivity, it is desirable to use a highly conductive metal foil having a thickness of 30 mm or more, and even 50 mm or more. In this way, when an amorphous alloy is plated on a low-resistance metal foil, such as a silver or copper foil, an amorphous alloy layer with a uniform thickness can be quickly obtained.
非晶質合金を被覆した良導電性金属箔テープの片面また
は両面に粘着剤を塗布しであると、必要な部分にこれを
張り付けることにより容易に電磁波シールドを施すこと
ができる。By applying an adhesive to one or both sides of a highly conductive metal foil tape coated with an amorphous alloy, it is possible to easily provide electromagnetic shielding by applying the adhesive to the required area.
以下実施例を用いて説明する。This will be explained below using examples.
（実施例１）
第１図に示した如き構造のめっき装置のめっき浴槽６中
に塩化鉄（Ｉ［） １１．９ ｇ／ｌ、硫酸コバルト（
■）２６４．３ｇ／ｊ！、次亜リン酸ナトリウム２１．
２ｇ／ｆ、はう酸６．２ｇ／ｌなる組成のめっき浴をｐ
Ｈ１，３に調製して満たし、５０°Ｃに保持した。コバ
ルトからなる対重５と作用極である５〇−厚の銅箔４の
間に電流密度０．０５Ａ ／ｃｊに相当する電圧を印加
して銅箔上に鉄−コバルト−りん非晶質合金層を析出さ
せた。を源としては北斗電工社製ＨＣＰ−３０１８を使
用した。めっき浴中の銅箔の滞在時間を３分とすること
により銅箔上に３−のＰｅ：Ｃｏ：Ｐ＝６：８４ ：
１０の組成の非晶質合金層を形成した。(Example 1) Iron chloride (I [) 11.9 g/l, cobalt sulfate (
■) 264.3g/j! , sodium hypophosphite21.
A plating bath with a composition of 2g/f, 6.2g/l
It was prepared and filled to H1,3 and kept at 50°C. A voltage corresponding to a current density of 0.05 A/cj is applied between the counterweight 5 made of cobalt and the 50-thick copper foil 4 serving as the working electrode to form an iron-cobalt-phosphorus amorphous alloy on the copper foil. A layer was deposited. As a source, HCP-3018 manufactured by Hokuto Denko Co., Ltd. was used. By setting the residence time of the copper foil in the plating bath to 3 minutes, 3-Pe:Co:P=6:84 on the copper foil:
An amorphous alloy layer having a composition of 10 was formed.
非晶質合金層表面は鏡面光沢を有し、柔軟性に優れてい
た。The surface of the amorphous alloy layer had specular luster and was excellent in flexibility.
この合金層を銅箔より剥離し、Ｘ線回折チャートを取っ
た結果を第２図に示す。第２図において横軸は試料から
のＸ線散乱角であり、縦軸は散乱強度である。金属特有
の結晶に基づ（ピークはみられず、完全に非晶化してい
ることを確めた。このテープの電磁じゃへい効果は極め
て良好なものであった。This alloy layer was peeled off from the copper foil and an X-ray diffraction chart was taken, and the results are shown in FIG. In FIG. 2, the horizontal axis is the X-ray scattering angle from the sample, and the vertical axis is the scattering intensity. Based on the crystal characteristic of metals (no peaks were observed, it was confirmed that the tape was completely amorphous).The electromagnetic interference effect of this tape was extremely good.
（実施例２）
ｗ４箔の裏面に粘着剤を塗布しであるテープ（３Ｍ社製
製品Ｎａｌ ２４５）上に実施例１と同様の方法で非
晶質合金層を５−形成した。さらにその上に銅めっき層
及び非晶質合金層を各々５−ずつ形成し、これを５回繰
り返して積層した。この電磁じゃへいテープの断面概略
図を第３図に示した。このテープの電磁しやへい効果は
穫めて良好であった。(Example 2) An amorphous alloy layer was formed in the same manner as in Example 1 on a tape (product Nal 245, manufactured by 3M) by applying an adhesive to the back side of W4 foil. Further, five copper plating layers and five amorphous alloy layers were formed thereon, and this was repeated five times to stack them. A schematic cross-sectional view of this electromagnetic tape is shown in FIG. The electromagnetic shielding effect of this tape was very good.
本発明の高透磁率非晶質合金をめっきした良導電性金属
箔は磁気遮へい効果に優れ、成形性にとみかつ加工性に
優れた電磁波遮へい材料として用いることができる。The highly conductive metal foil plated with the high magnetic permeability amorphous alloy of the present invention has an excellent magnetic shielding effect, and can be used as an electromagnetic shielding material with excellent formability and workability.
第１図は、本発明の電磁じゃへいテープを作るに際して
用いためっき装置の概略図であり、第２図は、実施例１
の非晶質合金のＸ線回折チャート図を、第３図は実施例
２によって得た非晶質合金層と銅層の積層構造を有する
本発明の電磁じゃへいテープの断面概略図である。
特許出願人 三菱レイヨン株式会社FIG. 1 is a schematic diagram of a plating apparatus used in producing the electromagnetic barrier tape of the present invention, and FIG.
FIG. 3 is a schematic cross-sectional view of an electromagnetic barrier tape of the present invention having a laminated structure of an amorphous alloy layer and a copper layer obtained in Example 2. Patent applicant Mitsubishi Rayon Co., Ltd.
Claims (1)
性非晶質合金層を少なくとも一層電気めっき法にて形成
したことを特徴とする電磁波しゃへいテープ。(1) An electromagnetic shielding tape characterized in that at least one highly permeable amorphous alloy layer is formed on at least one side of a highly conductive metal foil tape by electroplating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7802089A JPH02260500A (en) | 1989-03-31 | 1989-03-31 | Electromagnetic wave shielding tape |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7802089A JPH02260500A (en) | 1989-03-31 | 1989-03-31 | Electromagnetic wave shielding tape |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02260500A true JPH02260500A (en) | 1990-10-23 |
Family
ID=13650121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7802089A Pending JPH02260500A (en) | 1989-03-31 | 1989-03-31 | Electromagnetic wave shielding tape |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02260500A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003059030A1 (en) * | 2002-01-08 | 2003-07-17 | 4-D Neuroimaging Oy | Wall element for magnetically shielded room and magnetically shielded room |
| WO2016092692A1 (en) * | 2014-12-12 | 2016-06-16 | 株式会社メイコー | Moulded circuit module, and production method therefor |
-
1989
- 1989-03-31 JP JP7802089A patent/JPH02260500A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003059030A1 (en) * | 2002-01-08 | 2003-07-17 | 4-D Neuroimaging Oy | Wall element for magnetically shielded room and magnetically shielded room |
| US7335838B2 (en) | 2002-01-08 | 2008-02-26 | Elekta Ab (Publ) | Wall element for magnetically shielded room and magnetically shielded room |
| EP1470746B1 (en) * | 2002-01-08 | 2013-05-22 | Elekta AB (publ) | Wall element for magnetically shielded room and magnetically shielded room |
| WO2016092692A1 (en) * | 2014-12-12 | 2016-06-16 | 株式会社メイコー | Moulded circuit module, and production method therefor |
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