JPH02258970A - Alloy film forming device - Google Patents
Alloy film forming deviceInfo
- Publication number
- JPH02258970A JPH02258970A JP7805289A JP7805289A JPH02258970A JP H02258970 A JPH02258970 A JP H02258970A JP 7805289 A JP7805289 A JP 7805289A JP 7805289 A JP7805289 A JP 7805289A JP H02258970 A JPH02258970 A JP H02258970A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- anode
- alloy
- center line
- cathodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 68
- 239000000956 alloy Substances 0.000 title claims abstract description 68
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 229910002708 Au–Cu Inorganic materials 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 4
- 230000000996 additive effect Effects 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 4
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 17
- 239000010931 gold Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018883 Pt—Cu Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は合金（金屑元素のほかに炭素、ケイ素などの
非金属元素を含むものを含み、また固溶体、共晶（共融
混合物）、化合物（金属間化合物）あるいはそれらが共
存するものを含む）の皮膜を形成する装置に関するもの
である。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to alloys (including those containing nonmetallic elements such as carbon and silicon in addition to gold scrap elements), solid solutions, eutectics (eutectic mixtures), The present invention relates to an apparatus for forming a film of a compound (including an intermetallic compound or a compound in which these compounds coexist).
従来の皮膜形成装置としては、特公昭５９−３３１９１
号公報、特公昭６３−９５８５号公報に示されるように
、真空容器内を２ ＸＩＯ”Ｐａ程度の不活性ガス雰囲
気とし、円筒状の陽極と金属からなる対向陰極との間に
冷陰極放電を生じさせることにより。As a conventional film forming device, the Japanese Patent Publication No. 59-33191
As shown in Japanese Patent Publication No. 63-9585, an inert gas atmosphere of about 2 By causing.
冷陰極放電によって生成された不活性ガスの正イオンで
対向陰極の表面を１＃撃させて、対向陰極から金属原子
をスパッタリングさせ、スパッタリングされた金属原子
の一部を試料の表面に付着させて、金属の皮膜を形成す
るものがある。The surface of the counter cathode is bombarded with positive ions of an inert gas generated by cold cathode discharge to sputter metal atoms from the counter cathode, and some of the sputtered metal atoms adhere to the surface of the sample. , some form a metal film.
しかし、このような皮膜形成装置においては。 However, in such a film forming apparatus.
合金の皮膜を形成することができない。Unable to form alloy film.
なお、合金からなる対向陰極を使用すれば、合金の皮膜
を形成することができる。しかし１合金からなる対向陰
極を製造するのは面倒である。また、合金の組成比を変
えるには、組成比が異なる合金からなる対向陰極を製造
する必要があるから。Note that if a counter cathode made of an alloy is used, an alloy film can be formed. However, manufacturing a counter cathode made of one alloy is complicated. Furthermore, in order to change the composition ratio of the alloy, it is necessary to manufacture opposed cathodes made of alloys with different composition ratios.
皮膜の組成比を変えるのが困難である。さらに。It is difficult to change the composition ratio of the film. moreover.
金属によってスパッタリング率すなわち１個の不活性ガ
スの正イオンで衝撃したときに固体表面からスパッタリ
ングされる構成原子の数が異なる。The sputtering rate, that is, the number of constituent atoms sputtered from the solid surface when bombarded with one positive ion of an inert gas differs depending on the metal.
たとえば、６００ｅＶのＡｒの正イオンでＣｕ、Ｐｔを
衝撃した場合のスパッタリング率はそれぞれ２゜３０．
１．６０である。このように、Ｃｕのスパッタリング率
はｐｔのスパッタリング率の約１．４倍であるから、Ｃ
ｕ、Ｐｔの組成比が１＝１の合金の皮膜を形成するには
、Ｃｕ、Ｐｔの組成比が約１ ： １．４の合金からな
る対向陰極を製造する必要がある。しかも、スパッタリ
ング率はＷｆ撃イオンのエネルギーによっても変化する
。したがって。For example, when Cu and Pt are bombarded with Ar positive ions at 600 eV, the sputtering rate is 2°30.
It is 1.60. In this way, since the sputtering rate of Cu is about 1.4 times that of pt,
In order to form a film of an alloy in which the composition ratio of u and Pt is 1=1, it is necessary to manufacture a counter cathode made of an alloy in which the composition ratio of Cu and Pt is approximately 1:1.4. Furthermore, the sputtering rate also changes depending on the energy of the Wf bombardment ions. therefore.
任意の組成比の合金の皮膜を形成することが困難である
。It is difficult to form an alloy film with an arbitrary composition ratio.
この発明は上述の課題を解決するためになされたもので
１合金からなる対向陰極を用いることなく合金の皮膜を
形成することができる合金皮膜形成装置、合金からなる
対向陰極を用いることなく合金の皮膜を形成することが
でき、皮膜の組成比を変えるのが容易であり、かつ任意
の組成比の合金の皮膜を形成するのが容易である合金皮
膜形成装置を提供することを目的とする。This invention was made to solve the above-mentioned problems, and includes an alloy film forming apparatus capable of forming an alloy film without using an opposed cathode made of an alloy, and an alloy film forming apparatus capable of forming an alloy film without using an opposed cathode made of an alloy. It is an object of the present invention to provide an alloy film forming apparatus that can form a film, easily change the composition ratio of the film, and easily form an alloy film with an arbitrary composition ratio.
上記目的を達成するため、第１発明においては、真空容
器と、上記真空容器内に設けられた中空状の陽極と、上
記陽極の面倒にかつ上記陽極の中心線とほぼ直角に設け
られた一対の対向陰極と、上記対向陰極のうちの少なく
とも一方の上記陽極に対応する部分に設けられかつ上記
対向陰極とは異なる金属からなる付加陰極と、磁力線が
上記陽極の中心線とほぼ平行な磁場を形成する磁石と、
上記対向陰極の一方に設けられかつ中心線が上記陽極の
中心線から偏心した透過孔とを設ける。In order to achieve the above object, the first invention includes a vacuum vessel, a hollow anode provided in the vacuum vessel, and a pair of hollow anodes disposed substantially perpendicularly to the center line of the anode. an additional cathode provided in a portion of at least one of the opposed cathodes corresponding to the anode and made of a metal different from the opposed cathode, and a magnetic field whose lines of magnetic force are substantially parallel to the center line of the anode. a magnet that forms;
A transmission hole is provided in one of the opposed cathodes and whose center line is offset from the center line of the anode.
また、上記目的を達成するため、第２発明においては、
真空容器と、上記真空容器内に設けられた中空状の陽極
と、上記陽極の一方側にかつ上記陽極の中心線とほぼ直
角に設けられた第１の対向陰極と、上記陽極の他方側に
かつ上記陽極の中心線とほぼ直角に設けられ、上記第１
の対向陰極とは異なる金属からなる第２の対向陰極と、
磁力線が上記陽極の中心線とほぼ平行な磁場を形成する
磁石と、上記第１、第２の対向陰極の一方に設けられか
つ中心線が上記陽極の中心線から偏心した透過孔とを設
ける。Moreover, in order to achieve the above object, in the second invention,
a vacuum container, a hollow anode provided in the vacuum container, a first opposing cathode provided on one side of the anode and substantially perpendicular to the center line of the anode, and on the other side of the anode. and is provided substantially perpendicularly to the center line of the anode, and the first
a second opposing cathode made of a metal different from that of the opposing cathode;
A magnet that forms a magnetic field with lines of magnetic force substantially parallel to the center line of the anode, and a transmission hole that is provided in one of the first and second opposing cathodes and whose center line is eccentric from the center line of the anode are provided.
第１発明の合金皮膜形成装置においては、真空容器内を
低圧のガス雰囲気とし、陽極と対向陰極、付加陰極との
間に冷陰極放電を生じさせると、冷陰極放電によって生
成されたガスの正イオンが対向陰極、付加陰極の表面を
衝撃し、対向陰極、付加陰極から構成原子がスパッタリ
ングされ、スパッタリングされた構成原子の一部が試料
の表面に付着して１合金の皮膜が形成される。In the alloy film forming apparatus of the first invention, when a low-pressure gas atmosphere is created in the vacuum container and a cold cathode discharge is generated between the anode, the opposing cathode, and the additional cathode, the gas generated by the cold cathode discharge becomes positive. Ions bombard the surfaces of the counter cathode and additional cathode, constituent atoms are sputtered from the counter cathode and additional cathode, and some of the sputtered constituent atoms adhere to the surface of the sample to form an alloy film.
また、第２発明の合金皮膜形成装置においては、真空容
器内を低圧のガス雰囲気とし、陽極と第１、第２の対向
陰極との間に冷陰極放電を生じさせると、冷陰極放電に
よって生成されたガスの正イオンが第１、第２の対向陰
極の表面を衝撃し、第１、第２の対向陰極から構成原子
がスパッタリングされ、スパッタリングされた構成原子
の一部が試料の表面に付着して１合金の皮膜が形成され
る。In addition, in the alloy film forming apparatus of the second invention, when the inside of the vacuum container is made into a low-pressure gas atmosphere and cold cathode discharge is generated between the anode and the first and second opposing cathodes, the cold cathode discharge generates The positive ions of the gas bombard the surfaces of the first and second opposing cathodes, and the constituent atoms are sputtered from the first and second opposed cathodes, and some of the sputtered constituent atoms adhere to the surface of the sample. As a result, a film of 1 alloy is formed.
第１図は第１発明に係る合金皮膜形成装置を示す概略正
断面図、第２図は第１図に示した合金皮膜形成装置の一
部を示す拡大平面図である。図において、１は放電容器
で、放電容器１には排気管（図示せず）およびガス導入
管（図示せず）が接続されており、排気管は油回転ポン
プ、油拡散ポンブからなる真空排気系（図示せず）に接
続されており、またガス導入管はＡｒガスボンベ（図示
せず）に接続されている。２は放電容器１によって形成
された放電室で、放電室２の内径は４６＋ｍ、高さは２
０１ｍであるｅｌａは放電容器１の側壁円板。FIG. 1 is a schematic front sectional view showing an alloy film forming apparatus according to the first invention, and FIG. 2 is an enlarged plan view showing a part of the alloy film forming apparatus shown in FIG. In the figure, 1 is a discharge vessel, and an exhaust pipe (not shown) and a gas introduction pipe (not shown) are connected to the discharge vessel 1, and the exhaust pipe is a vacuum exhaust consisting of an oil rotary pump and an oil diffusion pump. system (not shown), and the gas introduction pipe is connected to an Ar gas cylinder (not shown). 2 is a discharge chamber formed by the discharge vessel 1, the inner diameter of the discharge chamber 2 is 46+m, and the height is 2
ela, which is 01m, is a side wall disk of the discharge vessel 1.
４は側壁円板１ａに設けられた透過孔で、透過孔４の直
径６ｍである。５は側壁円板１ａに設けられた排気用小
孔、６は放電室２内に設けられた円筒状の陽極で、陽極
６はＳＵＳからなり、内径が１０ａｍ、外径が１１ ｍ
、長さが９ｎｏで、透過孔４の中心線は陽極６の中心線
から偏心している。７は陽極６に取り付けられた陽極リ
ードで、陽極リード７は直流高電圧電源に接続されてい
る。８は陽極リード７を放電容器１に固定する絶縁体、
９．１０は放電容器ｌに取り付けられた一対の円形対向
陰極で、陰極９．１０は陽極６の面側に位置しており、
陰極９．１０は陽極６の中心線と直角であり、また陰極
９．１０はアース電位であり、さらに陰極９，１０はＡ
ｕからなり、陰極９は直径が４０ｎａ、厚さが０．２ｍ
ｍであり、陰極１０は直径が３０圓、厚さが０．２膿で
ある。１１は陰極９に設けられた透過孔で、透過孔１１
の直径は６ＩＩｌｌで、透過孔１１の中心線は透過孔４
の中心線と一致している。１２ａは陰極１０の陽極６に
対応する部分に取り付けられた付加陰極で、付加陰［ｉ
１２ ａはＣｕからなり、付加陰極１２ａは厚さが０
．２ｍｗであり、陽極６の中心線を中心とした半径６■
の領域における付加陰極１２ａの面積と陰極１０の面積
との比は約０．５である。１３は放電容器１に０リング
シール（図示せず）を介してボルト（図示せず）で取り
付けられた試料容器、１４は試料容器１３によって形成
された試料室で、試料室１４の内径は４２ｍ＋ａ、高さ
は２０ｍｍである。１５は放電容器１と試料容器１３と
で構成された真空容器、１６は真空容器１５の外側に設
けられた磁石で、磁石１６の磁力線の方向は陽極６の中
心線と平行であり、磁石１６の磁束密度は０．ＩＴであ
る。4 is a transmission hole provided in the side wall disk 1a, and the diameter of the transmission hole 4 is 6 m. 5 is a small exhaust hole provided in the side wall disk 1a, 6 is a cylindrical anode provided in the discharge chamber 2, the anode 6 is made of SUS, and has an inner diameter of 10 am and an outer diameter of 11 m.
, the length is 9no, and the center line of the transmission hole 4 is eccentric from the center line of the anode 6. 7 is an anode lead attached to the anode 6, and the anode lead 7 is connected to a DC high voltage power source. 8 is an insulator that fixes the anode lead 7 to the discharge vessel 1;
9.10 is a pair of circular opposing cathodes attached to the discharge vessel l, the cathode 9.10 is located on the surface side of the anode 6,
The cathode 9.10 is perpendicular to the center line of the anode 6, and the cathode 9.10 is at ground potential, and the cathode 9,10 is at A
The cathode 9 has a diameter of 40 na and a thickness of 0.2 m.
m, and the cathode 10 has a diameter of 30 mm and a thickness of 0.2 mm. 11 is a transmission hole provided in the cathode 9;
The diameter of the hole is 6IIll, and the center line of the hole 11 is the center line of the hole 4.
coincides with the center line of Reference numeral 12a denotes an additional cathode attached to a portion of the cathode 10 corresponding to the anode 6, and an additional cathode [i
12a is made of Cu, and the additional cathode 12a has a thickness of 0.
．． 2mw, radius 6■ centered on the center line of anode 6
The ratio of the area of the additional cathode 12a to the area of the cathode 10 in the region is approximately 0.5. 13 is a sample container attached to the discharge vessel 1 with a bolt (not shown) via an O-ring seal (not shown), 14 is a sample chamber formed by the sample container 13, and the inner diameter of the sample chamber 14 is 42 m+a. , the height is 20 mm. Reference numeral 15 indicates a vacuum vessel composed of the discharge vessel 1 and the sample vessel 13; 16 indicates a magnet provided outside the vacuum vessel 15; the direction of the magnetic field lines of the magnet 16 is parallel to the center line of the anode 6; The magnetic flux density of is 0. It's IT.
１７は側壁円板１ａに取り付けられたガラス基板である
。17 is a glass substrate attached to the side wall disk 1a.
この合金皮膜形成装置においては、真空排気系により真
空容器１５内を約Ｉ Ｘ１０Ｌ４Ｐａに排気し、真空容
器１５内にＡｒガスボンベからＡｒガスを導入すること
により、真空容器１５内を１．５Ｘ１０”ＰａのＡｒガ
ス雰囲気としたのち、直流高電圧電源によりＰＩＩ極６
に１ｋＶの正電位を与えると、陽極６と陰極９．１０、
付加陰極１２ａとの間に冷陰極放電が生じ、冷陰極放電
によって生成されたＡｒガスの正イオンが陰極９，１ｏ
、付加陰極１２ａの表面を衝撃し、陰極９．１０からＡ
ｕ原子がスパッタリングされるとともに、付加陰極１２
ａからＣｕ原子がスパッタリングされ、スパッタリング
されたＡｕ原子、Ｃｕ原子の一部が透過孔１１．４を透
過して、ガラス基板１７の表面に付着し、ガラス基板１
７の表面にＡｕ−Ｃｕ合金からなる皮膜が形成される。In this alloy film forming apparatus, the inside of the vacuum container 15 is evacuated to about IX10L4Pa by the vacuum evacuation system, and Ar gas is introduced into the vacuum container 15 from the Ar gas cylinder, so that the inside of the vacuum container 15 is reduced to 1.5X10"Pa. After creating an Ar gas atmosphere, the PII pole 6 was
When a positive potential of 1 kV is applied to the anode 6 and the cathode 9.10,
A cold cathode discharge occurs between the additional cathode 12a, and positive ions of Ar gas generated by the cold cathode discharge reach the cathode 9,1o.
, impact the surface of the additional cathode 12a, and from the cathode 9.10 A
While the u atoms are sputtered, the additional cathode 12
Cu atoms are sputtered from a, and some of the sputtered Au atoms and Cu atoms pass through the transmission hole 11.4 and adhere to the surface of the glass substrate 17.
A film made of an Au-Cu alloy is formed on the surface of 7.
そして、形成された皮膜を蛍光Ｘ線分析器で分析した結
果、Ｃｕピークの高さとＡｕビークの高さとの比は約５
．５であった。As a result of analyzing the formed film using a fluorescent X-ray analyzer, the ratio between the height of the Cu peak and the height of the Au peak was approximately 5.
．． It was 5.
また、第３図に示すように、陽極６の中心線を中心とし
た半径６圓の領域における付加陰極１２ｂの面積と陰極
１０の面積との比が約１となる付加陰極１２ｂを陰極１
０に設け、また第４図に示すように、陽極６の中心線を
中心とした半径６■の領域における付加陰極１２ｃの面
積と陰極１０の面積との比が約２となる付加陰極１２ｃ
を陰極１０に設けて、上述と同様の条件で皮膜を形成し
。Further, as shown in FIG. 3, an additional cathode 12b is attached to the cathode 1 such that the ratio of the area of the additional cathode 12b to the area of the cathode 10 in a region of radius 6 circles centered on the center line of the anode 6 is about 1.
As shown in FIG.
was provided on the cathode 10, and a film was formed under the same conditions as described above.
形成された皮膜を蛍光Ｘ線分析器で分析した結果、Ｃｕ
ピークの高さとＡｕビークの高さとの比はそれぞれ約１
１．５、約２０．５であった。As a result of analyzing the formed film with a fluorescent X-ray analyzer, Cu
The ratio between the peak height and the Au peak height is approximately 1.
1.5, about 20.5.
第５図は付加陰極１２の面積と陰極１０の面積との比と
Ｃｕピークの高さとＡｕビークの高さとの比との関係を
示すグラフである。このグラフから明らかなように、両
者の比は比例する。そして。FIG. 5 is a graph showing the relationship between the ratio between the area of the additional cathode 12 and the area of the cathode 10 and the ratio between the height of the Cu peak and the height of the Au peak. As is clear from this graph, the ratio between the two is proportional. and.
Ｃｕピークの高さとＡｕビークの高さとの比はＣｕ、Ａ
ｕの組成比に対応する。したがって、付加陰極１２の面
積と陰極１０の面積との比を変えることにより、皮膜の
組成比を変えることができるので、皮膜の組成比を変え
ることが容易であり、また第５図のグラフから形成すべ
き皮膜のＣｕビー−りの高さとＡｕビークの高さとの比
に応じた付加陰極１２の面積と陰極１０の面積との比を
求め、その面積比となるように付加陰極１２を設け、皮
膜を形成すれば、任、麻の組成比の合金の皮膜を形成す
ることができるので、任意の組成比の合金の皮膜を形成
するのが容易である。たとえば、Ｃｕピークの高さとＡ
ｕピークの高さとの比が２０の皮膜を形成するには、付
加陰極１２の面積と陰極１０の面積との比を約１．９と
すればよい。The ratio of the Cu peak height to the Au peak height is Cu, A
It corresponds to the composition ratio of u. Therefore, by changing the ratio between the area of the additional cathode 12 and the area of the cathode 10, the composition ratio of the film can be changed, so it is easy to change the composition ratio of the film. The ratio between the area of the additional cathode 12 and the area of the cathode 10 is determined in accordance with the ratio of the height of the Cu bead and the height of the Au beak of the film to be formed, and the additional cathode 12 is provided so as to have the area ratio. If a film is formed, it is possible to form a film of an alloy having a composition ratio of 1, 2, 3, or 3, so it is easy to form a film of an alloy having an arbitrary composition ratio. For example, the height of Cu peak and A
In order to form a film having a ratio of 20 to the height of the u peak, the ratio between the area of the additional cathode 12 and the area of the cathode 10 should be about 1.9.
また、第６図〜第８図に示すように、Ｐｔからなる対向
陰極の一方の陰極１８にＣｕからなる付加陰極１９ａ〜
１９ｃを設け、陽極６の中心線を中心とした半径６ＩＩ
Ｉｌの領域における付加陰極１９８〜１９ｃの面積と陰
極１８の面積との比をそれぞれ約１、約３、約９とし、
上述と同様の条件で皮膜を形成し、形成された皮膜を蛍
光Ｘ線分析器で分析した結果、Ｃｕピークの高さとｐｔ
ピークの高さとの比はそれぞれ約１、約３．２、約９．
３であった。Further, as shown in FIGS. 6 to 8, additional cathodes 19a to 19 made of Cu are added to one cathode 18 of the opposing cathodes made of Pt.
19c and a radius 6II centered on the center line of the anode 6.
The ratio of the area of the additional cathodes 198 to 19c and the area of the cathode 18 in the region Il is about 1, about 3, and about 9, respectively,
A film was formed under the same conditions as above, and the formed film was analyzed using a fluorescent X-ray analyzer. As a result, the height of the Cu peak and the pt
The ratio to the peak height is about 1, about 3.2, and about 9.
It was 3.
第９図は付加陰極１９の面積と陰極１８の面積との比と
Ｃｕピークの高さとｐｔビークの高さとの比との関係を
示すグラフである。このグラフから明らかなように１両
者の比は比例する。FIG. 9 is a graph showing the relationship between the ratio between the area of the additional cathode 19 and the area of the cathode 18 and the ratio between the height of the Cu peak and the height of the PT peak. As is clear from this graph, the ratio between the two is proportional.
第１０図〜第１２図はそれぞれＡｕ−Ａｇ合金、Ａ ｕ
−Ｃｕ合金、Ａ ｇ −Ｃｕ合金の組成と色との関係
を示すグラフである。このグラフから明らかなように、
合金の組成を変化させることにより合金の色を変化させ
ることができる。したがって、陽極に対応した部分の付
加陰極の面積と対向陰極の面積との比を任意に定めるこ
とにより、任意の色の合金の皮膜を形成することができ
る。このため、宝石、メガネの枠、レンズ、人工歯面に
任意の色の合金からなるバタン、記号を設けることがで
きる。Figures 10 to 12 show Au-Ag alloy, Au
It is a graph showing the relationship between the composition and color of -Cu alloy and Ag -Cu alloy. As is clear from this graph,
By changing the composition of the alloy, the color of the alloy can be changed. Therefore, by arbitrarily determining the ratio between the area of the additional cathode and the area of the opposing cathode in the portion corresponding to the anode, an alloy film of any color can be formed. Therefore, it is possible to provide a button or a symbol made of an alloy of any color on jewelry, frames of glasses, lenses, and artificial tooth surfaces.
第１３図は第２発明に係る合金皮膜形成装置を示す概略
正断面図である。図において、２０は陽極６の一方何に
設けられた第１の対向陰極で、陰極２０は陽極６の中心
線とはぼ直角であり、陰極２０はＣｕからなる。２１は
陽極６の他方側に設けられた第２の対向陰極で、陰極２
１は陽極６の中心線とほぼ直角に設けられ、陰極２１は
Ａｕからなる。２２は陰極２ｏに設けられた透過孔で、
透過孔２２の直径は６＋ａｍで、透過孔２２の中心線は
透過孔４の中心線と一致している。FIG. 13 is a schematic front sectional view showing an alloy film forming apparatus according to the second invention. In the figure, 20 is a first opposing cathode provided on one side of the anode 6, the cathode 20 is approximately perpendicular to the center line of the anode 6, and the cathode 20 is made of Cu. 21 is a second opposing cathode provided on the other side of the anode 6;
1 is provided substantially perpendicular to the center line of the anode 6, and the cathode 21 is made of Au. 22 is a transmission hole provided in the cathode 2o,
The diameter of the transmission hole 22 is 6+am, and the center line of the transmission hole 22 coincides with the center line of the transmission hole 4.
この合金皮膜形成装置においては、真空排気系により真
空容器１５内を約Ｉ Ｘ １０”Ｐａに排気し。In this alloy film forming apparatus, the inside of the vacuum container 15 is evacuated to about I x 10''Pa by a vacuum evacuation system.
真空容器１５内にＡｒガスボンベからＡｒガスを導入す
ることにより、真空容器１５内を１．５×１０”Ｐａの
Ａｒガス雰囲気としたのち、直流高電圧電源により陽極
６に１ｋＶの正電位を与えると、陽極６と陰極２０．２
１との間に冷陰極放電が生じ。Ar gas is introduced into the vacuum container 15 from an Ar gas cylinder to create an Ar gas atmosphere of 1.5×10"Pa in the vacuum container 15, and then a positive potential of 1 kV is applied to the anode 6 by a DC high voltage power supply. , anode 6 and cathode 20.2
Cold cathode discharge occurs between 1 and 1.
冷陰極放電によって生成されたＡｒガスの正イオンが陰
極２０．２１の表面をｌ！ＩＬ、１１３極２０からＣｕ
原子がスパッタリングされるとともに、陰極２１からＡ
ｕ［子がスパッタリングされ、スパッタリングされたＣ
ｕｇ子、Ａｕ原子の一部が透過孔２２．４を透過して、
ガラス基板１７の表面に付着し、ガラス基板１７の表面
にＡｕ−Ｃｕ合金からなる皮膜が形成される。Positive ions of Ar gas generated by cold cathode discharge touch the surface of the cathode 20.21! IL, 113 poles 20 to Cu
As atoms are sputtered, A
u[child sputtered, sputtered C
Some of the Au atoms pass through the transmission hole 22.4,
It adheres to the surface of the glass substrate 17, and a film made of an Au-Cu alloy is formed on the surface of the glass substrate 17.
このような合金皮膜形成装置においては、合金からなる
対向陰極を用いることなく、合金の皮膜を形成すること
ができる。In such an alloy film forming apparatus, an alloy film can be formed without using an opposed cathode made of an alloy.
なお、上述実施例においては、陰極１０に付加陰極１２
ａを取り付けたが、陰極９に付加陰極を取り付けてもよ
く、また第１４図に示すように。Note that in the above embodiment, the additional cathode 12 is added to the cathode 10.
Although a is attached to the cathode 9, an additional cathode may be attached to the cathode 9, as shown in FIG.
陰極９および陰極１０に付加陰極１２を取り付けてもよ
い。また、上述実施例においては、Ａ ｕ −Ｃｕ合金
、Ｐｔ−Ｃｕ合金の皮膜を形成する場合について説明し
たが、他の合金の皮膜を形成する場合、３種以上の金属
等からなる合金の皮膜を形成する場合にもこの発明を適
用することができる。An additional cathode 12 may be attached to cathode 9 and cathode 10. Furthermore, in the above embodiments, a case was explained in which a film of an A u -Cu alloy or a Pt-Cu alloy was formed, but when a film of another alloy was formed, a film of an alloy consisting of three or more metals, etc. The present invention can also be applied to the case of forming.
さらに、上述実施例においては、中空状の陽極として円
筒状のｔＩ＆極６を用いたが、角筒状等の陽極。Further, in the above embodiment, the cylindrical tI&pole 6 was used as the hollow anode, but an anode having a rectangular cylindrical shape or the like may also be used.
中心線と平行な切欠きを有する筒状の陽極、２つのリン
グを数本の棒体で連結した陽極等を用いてもよい。また
、上述実施例においては、真空容器１５内をＡｒガス雰
囲気としたが、真空容器１５内を他の不活性ガス雰囲気
としてもよく、対向陰極、付加陰極が金のように不活性
物質からなるときには、真空容器内を活性ガス雰囲気と
してもよい。さらに、上述実施例においては、ガラス基
板１７を側壁円板１ａに取り付けたが、ガラス基板１７
を移動可能としてもよい。また、上述実施例においては
、試料がガラス基板１７である場合について説明したが
、試料が金属等の場合にもこの発明を適用することがで
きる。さらに、透過孔４部にパターンマスクを取り付け
れば、任意の形状の合金の皮膜を形成することができる
。また、導電体皮膜だけでなく、Ｎｉ−Ｃｒ合金等から
なる抵抗体皮膜、磁性体皮膜などを形成することができ
る。そして、Ｎｉ−Ｃｒ合金の組成を変化させと、抵抗
体皮膜の抵抗値が変化するので、任意の抵抗値を有する
抵抗体皮膜を形成することができる。また、発明者等に
実験によれば、上述と同様の条件により、陽極６に１２
分間正電位を与えて、線幅がｌａｍ、大きさが５ ｍｍ
Ｘ ５ ｔｒａのＳ字形の抵抗体皮膜を形成し、その
抵抗体皮膜の抵抗値を測定した結果、３２にΩであった
。A cylindrical anode having a notch parallel to the center line, an anode formed by connecting two rings with several rods, etc. may be used. Further, in the above-mentioned embodiment, the inside of the vacuum container 15 was made into an Ar gas atmosphere, but the inside of the vacuum container 15 may be made into an atmosphere of other inert gas, and the counter cathode and the additional cathode are made of an inert material such as gold. Sometimes, the inside of the vacuum container may be made into an active gas atmosphere. Furthermore, in the above embodiment, the glass substrate 17 was attached to the side wall disk 1a, but the glass substrate 17
may be movable. Further, in the above embodiment, the case where the sample is the glass substrate 17 has been described, but the present invention can also be applied when the sample is metal or the like. Furthermore, by attaching a pattern mask to the 4 portions of the transmission holes, it is possible to form an alloy film having an arbitrary shape. Furthermore, in addition to a conductive film, a resistive film made of a Ni-Cr alloy, a magnetic film, and the like can be formed. Since the resistance value of the resistor film changes when the composition of the Ni-Cr alloy is changed, a resistor film having an arbitrary resistance value can be formed. Also, according to experiments conducted by the inventors, under the same conditions as described above, the anode 6 has 12
Apply a positive potential for minutes, line width is lam, size is 5 mm
An S-shaped resistor film of X 5 tra was formed, and the resistance value of the resistor film was measured and found to be 32Ω.
以上説明したように、第１発明に係る合金皮膜形成装置
においては、合金からなる対向＋１３極を用いることな
く合金の皮膜を形成することができ、また付加陰極の面
積と対向陰極の面積との比を変えることにより、皮膜の
組成比を変えることができるので、皮膜の組成比を変え
ることが容易であり、さらにあらかじめ付加陰極の面積
と対向陰極の面積との比と組成比と関係を求めておけば
、形成すべき皮膜の組成比に応じた付加陰極の面積と対
向陰極の面積との比を求め、その面積比となるように付
加陰極を設け、皮膜を形成すれば、任意の組成比の合金
の皮膜を形成することができるので、任意の組成比の合
金の皮膜を形成するのが容易である。As explained above, in the alloy film forming apparatus according to the first invention, an alloy film can be formed without using opposing +13 electrodes made of an alloy, and the area of the additional cathode and the area of the opposing cathode are The composition ratio of the film can be changed by changing the ratio, so it is easy to change the composition ratio of the film.Furthermore, the relationship between the ratio of the area of the additional cathode and the area of the counter cathode, the composition ratio, and the relationship is determined in advance. If the ratio of the area of the additional cathode and the area of the counter cathode is determined according to the composition ratio of the film to be formed, and the additional cathode is provided so that the area ratio is achieved, and the film is formed, it is possible to form a film with any composition. Since it is possible to form a film of an alloy with a certain ratio, it is easy to form a film of an alloy with an arbitrary composition ratio.
また、第２発明に係る合金皮膜形成装置においては、合
金からなる対向陰極を用いることなく合金の皮膜を形成
することができる。Furthermore, in the alloy film forming apparatus according to the second aspect of the invention, an alloy film can be formed without using an opposed cathode made of an alloy.
このように、この発明の効果は顕著である。As described above, the effects of this invention are remarkable.
第１図は第１発明に係る合金皮膜形成装置を示す概略正
断面図、第２図は第１図に示した合金皮膜形成装置の一
部を示す拡大平面図、第３図、第４図はそれぞれ第１図
に示した合金皮膜形成装置に取り付けるべき陰極を示す
図、第５図は第１図に示した合金皮膜形成装置で皮膜を
形成した場合の付加陰極の面積と対向陰極の面積との比
とＣｕピークの高さとＡｕピークの高さとの比との関係
を示すグラフ、第６図〜第８図はそれぞれ第１発明に係
る他の合金皮膜形成装置に取り付けるべき陰極を示す図
、第９図は第６図〜第８図に示す陰極を取り付けた合金
皮膜形成装置で皮膜を形成した場合の付加陰極の面積と
対向陰極の面積との比とＣｕピークの高さとｐｔピーク
の高さとの比との関係を示すグラフ、第１０図〜第１２
図はそれぞれＡｕ−Ａｇ合金、Ａｕ−Ｃｕ合金、Ａｇ−
Ｃｕ合金の組成と色との関係を示すグラフ、第１３図は
第２発明に係る合金皮膜形成装置を示す概略正断面図、
第１４図は第１発明に係る他の合金皮膜形成装置を示す
概略正断面図である。
６・・・陽極
９．１０・・・対向陰極
１１・・・透過孔
２．１２ａ〜１２ｃ・・・付加陰極
５・・・真空容器
６・・・磁石
８・・・対向陰極
９ａ〜１９ｃ・・・付加陰極
０．２１・・・対向陰極
２・・・透過孔FIG. 1 is a schematic front sectional view showing an alloy film forming apparatus according to the first invention, FIG. 2 is an enlarged plan view showing a part of the alloy film forming apparatus shown in FIG. 1, FIGS. 3 and 4. Figure 5 shows the area of the additional cathode and the area of the counter cathode when a film is formed using the alloy film forming apparatus shown in Figure 1. A graph showing the relationship between the ratio of Cu peak height and Au peak height, and FIGS. 6 to 8 are diagrams showing cathodes to be attached to other alloy film forming apparatuses according to the first invention, respectively. , Figure 9 shows the ratio of the area of the additional cathode to the area of the opposing cathode, the height of the Cu peak, and the height of the pt peak when a film is formed using the alloy film forming apparatus equipped with the cathodes shown in Figures 6 to 8. Graphs showing the relationship between height and ratio, Figures 10 to 12
The figures show Au-Ag alloy, Au-Cu alloy, and Ag-Ag alloy, respectively.
A graph showing the relationship between the composition and color of Cu alloy, FIG. 13 is a schematic front sectional view showing the alloy film forming apparatus according to the second invention,
FIG. 14 is a schematic front sectional view showing another alloy film forming apparatus according to the first invention. 6... Anode 9.10... Opposing cathode 11... Transmission hole 2.12a-12c... Additional cathode 5... Vacuum vessel 6... Magnet 8... Opposing cathode 9a-19c.・・Additional cathode 0.21・・Counter cathode 2・・Transmission hole
Claims (1)
陽極と、上記陽極の両側にかつ上記陽極の中心線とはぼ
直角に設けられた一対の対向陰極と、上記対向陰極のう
ちの少なくとも一方の上記陽極に対応する部分に設けら
れかつ上記対向陰極とは異なる金属からなる付加陰極と
、磁力線が上記陽極の中心線とほぼ平行な磁場を形成す
る磁石と、上記対向陰極の一方に設けられかつ中心線が
上記陽極の中心線から偏心した透過孔とを具備すること
を特徴とする合金皮膜形成装置。 ２、真空容器と、上記真空容器内に設けられた中空状の
陽極と、上記陽極の一方側にかつ上記陽極の中心線とは
ぼ直角に設けられた第１の対向陰極と、上記陽極の他方
側にかつ上記陽極の中心線とはぼ直角に設けられ、上記
第１の対向陰極とは異なる金属からなる第２の対向陰極
と、磁力線が上記陽極の中心線とほぼ平行な磁場を形成
する磁石と、上記第１、第２の対向陰極の一方に設けら
れかつ中心線が上記陽極の中心線から偏心した透過孔と
を具備することを特徴とする合金皮膜形成装置。[Scope of Claims] 1. A vacuum container, a hollow anode provided in the vacuum container, and a pair of opposing cathodes provided on both sides of the anode and approximately perpendicular to the center line of the anode. , an additional cathode provided at a portion of at least one of the opposed cathodes corresponding to the anode and made of a metal different from the opposed cathode, and a magnet forming a magnetic field with lines of magnetic force substantially parallel to the center line of the anode. An alloy film forming apparatus comprising: a transmission hole provided on one of the opposing cathodes and having a center line eccentric from the center line of the anode. 2. a vacuum container, a hollow anode provided in the vacuum container, a first opposing cathode provided on one side of the anode and approximately perpendicular to the center line of the anode; A second opposing cathode is provided on the other side and substantially perpendicular to the center line of the anode, and is made of a metal different from that of the first opposing cathode, forming a magnetic field with lines of magnetic force substantially parallel to the center line of the anode. An alloy film forming apparatus comprising: a magnet; and a transmission hole provided in one of the first and second opposing cathodes, the center line of which is eccentric from the center line of the anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7805289A JPH02258970A (en) | 1989-03-31 | 1989-03-31 | Alloy film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7805289A JPH02258970A (en) | 1989-03-31 | 1989-03-31 | Alloy film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02258970A true JPH02258970A (en) | 1990-10-19 |
Family
ID=13651080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7805289A Pending JPH02258970A (en) | 1989-03-31 | 1989-03-31 | Alloy film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02258970A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04202661A (en) * | 1990-11-30 | 1992-07-23 | Toshio Sugita | Apparatus for forming superconductor thin film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5933191A (en) * | 1982-08-18 | 1984-02-22 | Konishiroku Photo Ind Co Ltd | Optical information recording medium |
| JPS639585A (en) * | 1986-06-30 | 1988-01-16 | 工藤 昭輝 | Full automatic cover sticker |
-
1989
- 1989-03-31 JP JP7805289A patent/JPH02258970A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5933191A (en) * | 1982-08-18 | 1984-02-22 | Konishiroku Photo Ind Co Ltd | Optical information recording medium |
| JPS639585A (en) * | 1986-06-30 | 1988-01-16 | 工藤 昭輝 | Full automatic cover sticker |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04202661A (en) * | 1990-11-30 | 1992-07-23 | Toshio Sugita | Apparatus for forming superconductor thin film |
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