JPH02257586A - Surge absorption element - Google Patents
Surge absorption elementInfo
- Publication number
- JPH02257586A JPH02257586A JP7646289A JP7646289A JPH02257586A JP H02257586 A JPH02257586 A JP H02257586A JP 7646289 A JP7646289 A JP 7646289A JP 7646289 A JP7646289 A JP 7646289A JP H02257586 A JPH02257586 A JP H02257586A
- Authority
- JP
- Japan
- Prior art keywords
- surge
- response voltage
- absorption element
- argon gas
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 229910052786 argon Inorganic materials 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 5
- 239000012212 insulator Substances 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、マイクロギャップ式サージ吸収素子に関する
。更に、詳しくは、サージ応答電圧を所望値にできるマ
イクロギャップ式サージ吸収素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a microgap type surge absorption element. More specifically, the present invention relates to a microgap type surge absorbing element that can set the surge response voltage to a desired value.
［従来の技術］
サージ吸収素子である放電管は作製方法からガス圧を大
気圧以下とする必要があるためギャップ間隔を１ｍ以上
として、放電開始電圧及びサージ応答電圧を制御するも
のである。然し乍ら、そのギャップ間隔が１−以上と大
きいため、サージ応答電圧が高いという欠点を持ってい
る。[Prior Art] Because a discharge tube, which is a surge absorbing element, needs to have a gas pressure below atmospheric pressure due to its manufacturing method, the discharge starting voltage and surge response voltage are controlled by setting the gap interval to 1 m or more. However, since the gap distance is as large as 1- or more, the surge response voltage is high.
［発明が解決しようとする問題点］
、本発明は、ギャップ間隔が８０μｍ以下のマイクロギ
ャップを有するサージ吸収素子において、大気圧以上の
アルゴンガス丁で封止することにより、サージ応答電圧
を低くできるマイクロギャップ式サージ吸収素子を提供
することを目的にする。[Problems to be Solved by the Invention] The present invention can reduce the surge response voltage by sealing with argon gas at atmospheric pressure or higher in a surge absorbing element having a micro gap with a gap interval of 80 μm or less. The purpose of this invention is to provide a micro-gap type surge absorption element.
［発明の構成］
［問題点を解決するための手段］
本発明は、封止ガラス管内にマイクロギャップ素子を有
するサージ吸収素子において、封止管内に、アルゴンガ
スを大気圧以上の高圧下で封止することによりサージ応
答電圧を所望値にできることを特徴とするマイクロギャ
ップ式サージ吸収素子である。[Structure of the Invention] [Means for Solving the Problems] The present invention provides a surge absorption element having a microgap element in a sealed glass tube, in which argon gas is sealed in the sealed tube under high pressure equal to or higher than atmospheric pressure. This micro-gap type surge absorbing element is characterized in that the surge response voltage can be set to a desired value by stopping the surge response voltage.
［作用］
本発明によると、マイクロギャップ式サージ吸収素子の
ガラス管内に封止するアルゴンガス圧を、大気圧より高
圧にすることにより、形成すべきギャップ幅を小さくで
きると同時に、それによる放電開始電圧及びサージ応答
電圧を任意に制御することのできるサージ吸収素子を可
能にしたものである。[Function] According to the present invention, by making the argon gas pressure sealed in the glass tube of the micro-gap surge absorbing element higher than atmospheric pressure, the gap width to be formed can be reduced, and at the same time, the discharge can be started. This enables a surge absorption element that can arbitrarily control voltage and surge response voltage.
本発明のマイクロギャップ式サージ吸収素子の構造は、
第１図の概略断面図に示される０円柱状セラミックス絶
縁体３の表面上に導電性被膜２を形成し、絶縁溝１、即
ち、マイクロギャップを形成し、アルゴンガス７で絶縁
性外装体６中に封止したものである０円柱状セラミック
ス絶縁体３０表面上に形成された両側の導電性被膜２の
両端には、電極５を形成し、リード線４を接続し、図示
のように外装体６の外部にまで通じである。The structure of the microgap surge absorption element of the present invention is as follows:
A conductive film 2 is formed on the surface of the cylindrical ceramic insulator 3 shown in the schematic cross-sectional view of FIG. Electrodes 5 are formed on both ends of the conductive coating 2 on both sides formed on the surface of the 0 cylindrical ceramic insulator 30 that is sealed inside, and lead wires 4 are connected to the exterior as shown in the figure. It also leads to the outside of the body 6.
このような構造のサージ吸収素子において、各ギャップ
間隔での、即ち、ギャップ間隔を２０．３０．４０．５
０．８０．１００．１５０μｍと変えたサージ吸収素子
を作製し、各々について、８００°Ｃでの封止ガス圧（
横軸にとる）とサージ応答電圧（ｔＩ＆軸にとる：（１
，２Ｘ５０）８秒２ｋＶのサージ電圧を５回印加したと
きのサージ応答電圧の平均値）との関係を測定した結果
を、第２図のグラフに示す、これから、ギャップ間隔が
狭いほどガス圧の高いところで、サージ応答電圧は最小
値をとり、その値も小さくなることが明らかである。ま
た、サージ応答電圧が最小値を示すときの各ギャップ間
隔と封止ガス圧（８００°Ｃでの）の関係を測定し、第
３図に示す、これより、ギャップ間隔が８０μｍ以下の
とき封止温度で大気圧即ち７６０Ｔｏ ｒ ｒ以上とな
ることが明らかである。In the surge absorption element having such a structure, each gap interval, that is, the gap interval is 20.30.40.5.
We fabricated surge absorbing elements with different diameters of 0.80, 100, and 150 μm, and the sealing gas pressure at 800°C (
(taken on the horizontal axis) and surge response voltage (taken on the tI & axis: (1
,2 It is clear that at high locations, the surge response voltage takes a minimum value and its value also becomes small. In addition, we measured the relationship between each gap spacing and sealing gas pressure (at 800°C) when the surge response voltage shows the minimum value, and from this we can see that when the gap spacing is 80 μm or less, the sealing gas pressure (at 800°C) is It is clear that the atmospheric pressure, that is, 760 Torr or higher, is reached at the stop temperature.
本発明に用いた導電性被膜は、電気抵抗率の小さい材料
であれば、金属、合金等を用いることができるが、特に
それに限定されるものではない。The conductive film used in the present invention may be made of metal, alloy, etc. as long as it has a low electrical resistivity, but is not particularly limited thereto.
改番こ、本発明のマイクロギャップ式サージ吸収素子を
具体的な実施例により説明するが、本発明は、次の説明
により限定される・ものではない。The microgap type surge absorbing element of the present invention will now be described with reference to specific examples, but the present invention is not limited to the following description.
［実施例１］
本実施例を断面により第４図に示す、被膜は、ＢａＡＲ
を用い、ギャップ幅は、２０μｍである。即ち、鉛ガラ
ス外装体５内にアルゴンガス７で封止された円柱状アル
ミナ碍子体３の表面上に導電性被膜（ＢａＡｆｆｉ）２
を形成し、その真ん中にギャップ１を形成し、また、そ
の両端に半球状ステンレスキャップ４を接合した構造の
ものである。外部電極６は、そのステンレスキャップ４
に先端接続されたものである。[Example 1] This example is shown in cross section in FIG. 4. The coating was made of BaAR.
The gap width is 20 μm. That is, a conductive film (BaAffi) 2 is formed on the surface of a cylindrical alumina insulator 3 sealed with argon gas 7 in a lead glass exterior body 5.
, a gap 1 is formed in the middle, and hemispherical stainless steel caps 4 are joined to both ends of the gap 1. The external electrode 6 is connected to its stainless steel cap 4.
The tip is connected to the
次に、本実施例における封止ガス圧（８００℃での）と
放電開始電圧、サージ応答電圧の関係を測定した結果を
第５図に示す、横軸に８００°Ｃでの封止ガス圧をとり
、縦軸に放電開始電圧及びサージ応答電圧をとったもの
である。Next, the results of measuring the relationship between the sealing gas pressure (at 800°C), the discharge starting voltage, and the surge response voltage in this example are shown in Figure 5, where the horizontal axis shows the sealing gas pressure at 800°C. , and the discharge starting voltage and surge response voltage are plotted on the vertical axis.
サージ応答電圧は、（１，２Ｘ５０）１１秒−２ｋＶで
印加したときの応答電圧を測定したものである。The surge response voltage was measured when a voltage of (1,2×50) 11 seconds-2 kV was applied.
封止ガス圧が３０００Ｔｏｒｒのとき放電開始電圧は１
３０Ｖ、サージ応答電圧は４４０ｖとなり、ネオン管等
の放電管に比べ、約１７２のサージ応答電ＪＥとなった
。When the sealing gas pressure is 3000 Torr, the discharge starting voltage is 1
30V, the surge response voltage was 440V, and compared to a discharge tube such as a neon tube, the surge response voltage was approximately 172V.
［発明の効果］
本発明のサージ吸収素子は、大気圧以上の圧力のアルゴ
ンガスを封止したマイクロギャップ素子を使用すること
により、
第１に、サージ応答電圧を任意に制御して得られるサー
ジ吸収素子が可能となったこと、第２に、特に、ネオン
管等の放電管に比べ、サージ応答電圧が低くできるサー
ジ吸収素子を提供できるなどの技術的な効果が得られた
。[Effects of the Invention] The surge absorbing element of the present invention uses a microgap element sealed with argon gas at a pressure higher than atmospheric pressure. Second, technical effects such as being able to provide a surge absorbing element with a lower surge response voltage than discharge tubes such as neon tubes were obtained.
第１図は、本発明によるマイクロギャップ式サージ吸収
素子の構造を示す断面図である。
第２図は、第１図のサージ吸収素子により測定した封Ｉ
Ｅガス圧とサージ応答電圧との関係を示すグラフである
。
第３図は、第１図のサージ吸収素子に対して測定したサ
ージ応答電圧が最小値でのギャップ間隔と封止ガス圧と
の関係を示すグラフである。
第４図は、本発明による構造のマイク１７ギヤツプ式サ
ージ吸収素子の一例を示す断面図である。
第５図は、第４図のサージ吸収素子により測定した封止
ガス圧とサージ応答電圧、放電開始電圧との関係を示す
グラフである。
［主要部分の符号の説明］
１ 、、、、、、、絶縁溝
２ 、、、、、、、導電性被膜或いはＢａＡ ｌ被膜３
、、、、、、、セラミックス絶縁体或いはアルミナ碍
子４ 、、、、、、、リード線或いはキャップ５、、、
、、、ｉｔ極或いは外部電極
６ 、、、、、、、絶縁性外装体或いはガラス管７ 、
、、、、、、アルゴンガス
特許出願人 三菱鉱業セメント株式会社代理人 弁理
士 倉 持 裕
第２図
第１
第３FIG. 1 is a sectional view showing the structure of a microgap type surge absorbing element according to the present invention. Figure 2 shows the seal I measured by the surge absorbing element in Figure 1.
It is a graph showing the relationship between E gas pressure and surge response voltage. FIG. 3 is a graph showing the relationship between the gap distance and the sealing gas pressure when the surge response voltage measured for the surge absorbing element of FIG. 1 is at its minimum value. FIG. 4 is a sectional view showing an example of a microphone 17 gap type surge absorption element having a structure according to the present invention. FIG. 5 is a graph showing the relationship between sealing gas pressure, surge response voltage, and discharge starting voltage measured by the surge absorbing element of FIG. 4. [Explanation of symbols of main parts] 1. Insulating groove 2. Conductive film or BaAl film 3
Ceramic insulator or alumina insulator 4 Lead wire or cap 5
, , IT pole or external electrode 6 , , Insulating exterior body or glass tube 7 ,
,,,,, Argon gas patent applicant Mitsubishi Mining Cement Co., Ltd. agent Patent attorney Hiroshi Kuramochi Figure 2 Figure 1 Figure 3
Claims (1)
吸収素子において、 封止管内に、アルゴンガスを大気圧以上の高圧下で封止
することによりサージ応答電圧を所望値に決めることの
できることを特徴とするマイクロギャップ式サージ吸収
素子。[Claims] In a surge absorption element having a microgap element in a sealed glass tube, the surge response voltage is determined to a desired value by sealing argon gas in the sealed tube under high pressure equal to or higher than atmospheric pressure. A micro-gap type surge absorption element that is characterized by the ability to:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1076462A JP2580320B2 (en) | 1989-03-30 | 1989-03-30 | Surge absorbing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1076462A JP2580320B2 (en) | 1989-03-30 | 1989-03-30 | Surge absorbing element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02257586A true JPH02257586A (en) | 1990-10-18 |
| JP2580320B2 JP2580320B2 (en) | 1997-02-12 |
Family
ID=13605833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1076462A Expired - Lifetime JP2580320B2 (en) | 1989-03-30 | 1989-03-30 | Surge absorbing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2580320B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004091060A1 (en) * | 2003-04-10 | 2004-10-21 | Okaya Electric Industries Co., Ltd. | Discharge tube and surge absorbing device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53848A (en) * | 1976-06-25 | 1978-01-07 | Mitsubishi Mining & Cement Co | Surge absorbing element |
-
1989
- 1989-03-30 JP JP1076462A patent/JP2580320B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53848A (en) * | 1976-06-25 | 1978-01-07 | Mitsubishi Mining & Cement Co | Surge absorbing element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004091060A1 (en) * | 2003-04-10 | 2004-10-21 | Okaya Electric Industries Co., Ltd. | Discharge tube and surge absorbing device |
| KR100735859B1 (en) * | 2003-04-10 | 2007-07-04 | 오카야 덴기 산교 가부시키가이샤 | Discharge tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2580320B2 (en) | 1997-02-12 |
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