JPH02257492A - Ferroelectric high-polymer optical recording medium - Google Patents
Ferroelectric high-polymer optical recording mediumInfo
- Publication number
- JPH02257492A JPH02257492A JP1084878A JP8487889A JPH02257492A JP H02257492 A JPH02257492 A JP H02257492A JP 1084878 A JP1084878 A JP 1084878A JP 8487889 A JP8487889 A JP 8487889A JP H02257492 A JPH02257492 A JP H02257492A
- Authority
- JP
- Japan
- Prior art keywords
- recording layer
- polymer
- recording medium
- dyestuffs
- pvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 230000031700 light absorption Effects 0.000 claims abstract description 21
- 229920001959 vinylidene polymer Polymers 0.000 claims abstract description 4
- 239000000975 dye Substances 0.000 claims description 26
- 229920006395 saturated elastomer Polymers 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 abstract description 6
- 229920006254 polymer film Polymers 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000005977 Ethylene Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 61
- 238000005240 physical vapour deposition Methods 0.000 description 12
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical compound FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- FCYVWWWTHPPJII-UHFFFAOYSA-N 2-methylidenepropanedinitrile Chemical compound N#CC(=C)C#N FCYVWWWTHPPJII-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CLDZYSUDOQXJOU-UHFFFAOYSA-M C5-oxacyanine Chemical compound [I-].O1C2=CC=CC=C2[N+](CC)=C1C=CC=CC=C1N(CC)C2=CC=CC=C2O1 CLDZYSUDOQXJOU-UHFFFAOYSA-M 0.000 description 1
- CHDVXKLFZBWKEN-UHFFFAOYSA-N C=C.F.F.F.Cl Chemical compound C=C.F.F.F.Cl CHDVXKLFZBWKEN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- CEJANLKHJMMNQB-UHFFFAOYSA-M cryptocyanin Chemical compound [I-].C12=CC=CC=C2N(CC)C=CC1=CC=CC1=CC=[N+](CC)C2=CC=CC=C12 CEJANLKHJMMNQB-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000434 metal complex dye Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000010094 polymer processing Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007785 strong electrolyte Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、ビニリデン系重合体(以下単にPVD系重合
体と称する)を記録層として用いた強誘電性高分子光可
逆記録媒体に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a ferroelectric polymer optically reversible recording medium using a vinylidene polymer (hereinafter simply referred to as a PVD polymer) as a recording layer. be.
[従来の技術]
PVD系重合体を記録媒体とした高分子光メモリーは、
すでに知られている。[Prior art] Polymer optical memory using PVD polymer as a recording medium is
Already known.
これは、PVD系重合体の強誘電性を利用した画期的な
光メモリーで、その記録原理は特開昭59−21509
8及び同59−215097号公報、あるいは高分子加
工35.418(198B)に開示されているように、
強誘電性高分子材料が電界によって分極する性質を利用
して、高い電界を印加して一方向に分極させた該強誘電
性高分子材料に対して、抗電界以下の弱い逆電界を印加
した状態で任意の部分に光ビームを照射加熱して該光照
射部のみを選択的に分極反転せしめることにより書き込
みを可能にし、さらに光または熱による焦電効果を利用
して読み出すことができるというものである。This is a revolutionary optical memory that utilizes the ferroelectric properties of PVD polymers, and its recording principle is based on Japanese Patent Application Laid-Open No. 59-21509.
8 and No. 59-215097, or as disclosed in Polymer Processing 35.418 (198B),
Taking advantage of the property of a ferroelectric polymer material to be polarized by an electric field, a weak reverse electric field less than the coercive electric field was applied to the ferroelectric polymer material, which was polarized in one direction by applying a high electric field. It is possible to write by irradiating and heating an arbitrary part with a light beam and selectively inverting the polarization of only the part irradiated with light, and further reading by using the pyroelectric effect caused by light or heat. It is.
このような強誘電性高分子を光メモリーとして使用する
場合には、該メモリーに照射される光に対する吸収効率
は重要な要素となるが、PVD系重合体膜は一般に光透
過性が高く、高出力のレーザー光等を必要とし、実用化
に際して大きな問題となっていた。When using such a ferroelectric polymer as an optical memory, the absorption efficiency of the light irradiated onto the memory is an important factor, but PVD polymer films generally have high light transmittance; It requires a laser beam, etc. to output power, which has been a big problem when it comes to practical use.
[発明が解決しようとする課題]
本発明は上記した高分子光メモリーにおける問題点を解
決すること、すなわち、PVD系玉金玉合体記録層射さ
れる光エネルギーを熱エネルギーに変換する効率(以下
光熱変換効率と略す)を向上せしめ、より高感度の強誘
電性高分子記録媒体を提供することを目的とするもので
ある。[Problems to be Solved by the Invention] The present invention aims to solve the problems in the polymer optical memory described above, namely, the efficiency of converting the emitted light energy into thermal energy (hereinafter referred to as photothermal energy). The purpose is to improve the conversion efficiency (abbreviated as "conversion efficiency") and provide a ferroelectric polymer recording medium with higher sensitivity.
[課題を解決するための手段]
本発明者は従来より上記PVD系重合体の光熱変換効率
を改善するため研究を重ねてきたが、該光記録媒体の記
録層を形成するPVD系重合体層中に可飽和色素を分散
するか、あるいは該層の近傍に可飽和色素を含む光吸収
層を設けることが有効であることを見出し、本発明に至
った。[Means for Solving the Problems] The present inventor has been conducting research to improve the light-to-heat conversion efficiency of the above-mentioned PVD polymer, and the PVD polymer layer forming the recording layer of the optical recording medium It has been found that it is effective to disperse a saturated dye therein or to provide a light absorption layer containing a saturated dye in the vicinity of the layer, leading to the present invention.
すなわち、本発明は、ビニリデン系重合体からなる記録
層を有する強誘電性高分子光記録媒体において、該記録
層がそこに分散された一揮以上の可飽和色素を含むか、
あるいは該記録層の近傍に設けた可飽和色素を含む光吸
収層を有することを特徴とする強誘電性高分子光記録媒
体である。That is, the present invention provides a ferroelectric polymer optical recording medium having a recording layer made of a vinylidene polymer, in which the recording layer contains one or more saturated dyes dispersed therein;
Alternatively, it is a ferroelectric polymer optical recording medium characterized by having a light absorption layer containing a saturated dye provided near the recording layer.
以下本発明の構成を図面に基づいて説明する。The configuration of the present invention will be explained below based on the drawings.
第1図は本発明の強誘電性高分子記録媒体のうち記録層
中に可飽和色素を分散した場合の構成モデル図である。FIG. 1 is a structural model diagram of the ferroelectric polymer recording medium of the present invention in which a saturated dye is dispersed in the recording layer.
この図中の 1が該光記録媒体の記録層であるPVD系
重合体膜から成る部分である。2.3及び4は夫々、下
部電極、基板及び上部電極である。さらに第2図は本発
明の強誘電性高分子記録媒体において、光吸収層5を設
けた場合の構成モデル図である。第3図a、b、c、d
及びeは本発明に於ける、記録層と光吸収層とを積層構
造とした場合の構成モデルを表した例である。即ち、光
吸収層は、記録層の上部(基板側とは、反対方向)(a
)或いは、その下部(b)に形成しても良い。ここで、
記録層と光吸収層とは、夫々、単層である必要はなく、
光吸収層が記録層に挾まれた構造(C)、或いは、逆に
、記録層が光吸収層に挾まれた構造(d)でも良い。更
に、記録層と光吸収層とを交互に積層した構造(e)で
も良い。また該光吸収層は必ずしも記録層に接している
必要もない。1 in this figure is a portion made of a PVD polymer film which is the recording layer of the optical recording medium. 2.3 and 4 are a lower electrode, a substrate, and an upper electrode, respectively. Further, FIG. 2 is a structural model diagram when a light absorption layer 5 is provided in the ferroelectric polymer recording medium of the present invention. Figure 3 a, b, c, d
and e are examples showing a structural model in the case where the recording layer and the light absorption layer have a laminated structure in the present invention. That is, the light absorbing layer is located above the recording layer (in the opposite direction to the substrate side) (a
) Alternatively, it may be formed at the lower part (b). here,
The recording layer and the light absorption layer each do not need to be a single layer;
A structure (C) in which a light absorption layer is sandwiched between recording layers, or conversely, a structure (d) in which a recording layer is sandwiched between light absorption layers may be used. Furthermore, a structure (e) in which recording layers and light absorption layers are alternately laminated may also be used. Further, the light absorption layer does not necessarily need to be in contact with the recording layer.
本発明において記録層を構成するPVD系重合体には種
々の化合物が報告されているが、本記録媒体においては
強誘電性を有し、かつ誘電ヒステリシス測定で矩形ある
い1≠、それに出来る限り近い形状を示すようなものが
望ましく、たとえばふり化ビニリデンのホモ重合体、及
びふり化ビニリデンを50重量%以上含むふり化ビニリ
デン共重合体を挙げることができる。該共重合体として
はふっ化ビニリデンと三ふっ化エチレン、六ふっ化プロ
ピレン、三ふっ化塩化エチレン等との共重合体等を挙げ
ることができる。Various compounds have been reported for the PVD polymer constituting the recording layer in the present invention, but in this recording medium, it has ferroelectricity and has a rectangular or 1≠ shape in dielectric hysteresis measurement, and as much as possible. It is desirable to have a similar shape, such as vinylidene difluoride homopolymers and vinylidene difluoride copolymers containing 50% by weight or more of vinylidene difluoride. Examples of the copolymer include copolymers of vinylidene fluoride and ethylene trifluoride, propylene hexafluoride, ethylene trifluoride chloride, and the like.
また、ポリシアン化ビニリデン、シアン化ビニリデン及
び酢酸ビニル共重合体等も挙げられるが、これらの中で
も弗化ビニリデン及び三弗化エチレン共重合体c以下P
(VDF−TrFE)と略す]が最も好ましい。Also included are polyvinylidene cyanide, vinylidene cyanide, and vinyl acetate copolymers, among which vinylidene fluoride and ethylene trifluoride copolymers below P
(abbreviated as VDF-TrFE)] is most preferred.
該記録層のPVD系重合体膜を製膜する方法としては浸
漬コーティング、スプレーコーティング、スピナーコー
ティング、ブレードコーティング、ローラコーティング
、カーテンコーティング等の溶液塗布法によって形成す
ることができる。この中でも浸漬コーティングやスピナ
ーコーティングによるものが該PVD系重合体膜を均一
な膜厚に形成する上に、超薄膜が得られる点からも好ま
しい。The PVD polymer film of the recording layer can be formed by a solution coating method such as dip coating, spray coating, spinner coating, blade coating, roller coating, or curtain coating. Among these methods, dip coating or spinner coating is preferable because the PVD polymer film can be formed to a uniform thickness and an ultra-thin film can be obtained.
上記記録層に誘起される焦電効果を検知する電極は、少
なくとも光が最初に入射する側の電極の一つが入射光に
対して透明或いは半透明であれば良い。透明電極の例と
してはITO(Indium Tin 0xide)電
極が知られている。半透明電極としては蒸着、CVD或
いはスパッタリング等の方法で金、白金、銀、スズ、銅
、鉛、亜鉛、アルミニウム、ニッケル、タンタル、チタ
ン、コバルト、ニオブ、パラジウム或いはスズ等の金属
を薄膜化した電極を挙げることができる。The electrodes for detecting the pyroelectric effect induced in the recording layer may be such that at least one of the electrodes on the side where light first enters is transparent or translucent to the incident light. An ITO (Indium Tin Oxide) electrode is known as an example of a transparent electrode. The translucent electrode is made of a thin film of metal such as gold, platinum, silver, tin, copper, lead, zinc, aluminum, nickel, tantalum, titanium, cobalt, niobium, palladium, or tin by vapor deposition, CVD, or sputtering. Examples include electrodes.
光吸収層は入射された光エネルギーを熱エネルギーに変
換し、これを効率良(記録層に伝送できる構造を形成し
ていれば良い。即ち、光吸収層は記録層に対していずれ
の側に設けられていても良く、又記録層に挾まれた累積
構造、或いは逆に記録層を挾んだ累積構造を形成してい
ても良い。更に、この光吸収層は必ずしも記録層に接し
ている必要はないが、接していることが望ましい。The light absorption layer converts the incident light energy into thermal energy and only needs to form a structure that can efficiently transmit this energy to the recording layer.In other words, the light absorption layer can be placed on either side of the recording layer. Alternatively, a cumulative structure sandwiched between the recording layer or a cumulative structure sandwiching the recording layer may be formed.Furthermore, this light absorption layer is not necessarily in contact with the recording layer. It is not necessary, but it is desirable that they are in contact.
本発明で用いられる光吸収層を成す光増感剤は、後述す
る光源の選択の余地が狭い故に第−義的に光源の照射波
長に依存する。入射光エネルギーを効率良く捕捉する為
に、その入射光子に対する吸収断面積が極力大きい光増
感剤が望ましい。本発明における吸収断面積の好ましい
値は、用いる光源のパワー密度の依存するものの、一般
的には電極部分からの熱エネルギーの逃散を考慮して、
1.5 X 10−” cm’程度以上である。更に光
増感剤は記録層に誘起される焦電効果を妨げぬ様導電性
の低い事が望ましい。この様な条件を満たすものとして
、レーザー分光学の分野で、レーザーパルスの形状を改
善する目的で使用されてきた可飽和色素がある。可飽和
色素の多くはポリメチン色素類に属しているものの必ず
しもこの限りではない。この色素の具体例としては、過
塩素酸5,5°−シクロ−1,1゛−ジフェニルアミノ
−3,3°−ジエチル−10,12−エチレンチアトリ
カルボシアニン(IR140)、過塩素酸1,1°、
3.3.3°、3°−へキサメチル−2゜2’−(6,
6°、7.7”−ジベンゾ)インドトリカルボシアニン
(EDITCP)、ヨウ化3,3゜−ジエチル−9
,11−ネオペンチレンチアトリカルボシアニン(DN
TTCI) 、ヨウ化1,1°、3.3,3°、3°−
ヘキサメチル−2,2°−インドトリカルボシアニン(
BITCI)、ネオシアニン(NCI)、ヨウ化t、t
’−ジエチル−2,2°−ジカルボシアニン(DDCI
)、クリプトシアニン、ヨウ化1.1’、 3.3.3
’、3°−へキサメチル−2,2°−インドジカルボシ
アニン(HIDCI)、ヨウ化ジエチル−2,2°−チ
アジカルボシアニン(DTDCI) 、ヨウ化1.3°
−ジエチル−4,2−キノリルチアカルボシアニン(D
QTCI)、及びヨウ化3.3°−ジエチルオキサジカ
ルボシア二ン(DODCI)等を挙げることができる。The photosensitizer constituting the light absorption layer used in the present invention primarily depends on the irradiation wavelength of the light source since there is limited room for selection of the light source described below. In order to efficiently capture incident light energy, it is desirable to use a photosensitizer that has as large an absorption cross section for incident photons as possible. The preferred value of the absorption cross section in the present invention depends on the power density of the light source used, but generally, taking into account the dissipation of thermal energy from the electrode portion,
It is approximately 1.5 x 10-"cm' or more. Furthermore, it is desirable that the photosensitizer has low conductivity so as not to interfere with the pyroelectric effect induced in the recording layer. As long as these conditions are met, In the field of laser spectroscopy, there are saturated dyes that have been used to improve the shape of laser pulses.Most saturated dyes belong to the polymethine dye class, but this is not always the case. Examples include perchloric acid 5,5°-cyclo-1,1′-diphenylamino-3,3°-diethyl-10,12-ethylenethiatricarbocyanine (IR140), perchloric acid 1,1°,
3.3.3°, 3°-hexamethyl-2°2'-(6,
6°,7.7”-dibenzo)indotricarbocyanine (EDITCP), 3,3°-diethyl-9 iodide
, 11-neopentylenethiatricarbocyanine (DN
TTCI), iodide 1,1°, 3.3,3°, 3°-
Hexamethyl-2,2°-indotricarbocyanine (
BITCI), neocyanine (NCI), iodide t, t
'-diethyl-2,2°-dicarbocyanine (DDCI
), cryptocyanin, iodide 1.1', 3.3.3
', 3°-hexamethyl-2,2°-indodicarbocyanine (HIDCI), diethyl iodide-2,2°-thiadicarbocyanine (DTDCI), 1.3° iodide
-diethyl-4,2-quinolylthiacarbocyanine (D
QTCI), and 3.3°-diethyloxadicarbocyanine iodide (DODCI).
該光吸収層は、これらの色素を記録層に分散させるか、
上記可飽和色素そのものの膜として、或いは、これを他
の適当な高分子膜に分散させて形成して良い。後者の目
的に使用し得る高分子としては、一般に、ポリメチルメ
タクリレート(PMMA) 、ポリスチレン、ポリビニ
ルアルコール(PVA) 、ポリビニルブチラール、ポ
リアミド、ポリイミド、ポリカーボネート、ポリエステ
ル等を挙げる事ができる。いずれの。The light absorption layer disperses these dyes in the recording layer, or
It may be formed as a film of the above-mentioned saturated dye itself, or by dispersing it in another suitable polymer film. Polymers that can be used for the latter purpose generally include polymethyl methacrylate (PMMA), polystyrene, polyvinyl alcohol (PVA), polyvinyl butyral, polyamide, polyimide, polycarbonate, polyester, and the like. Which one.
光吸収層を作製するにせよ、その方法は、先に記録層の
形成に関して列記した方法が、全て利用できる。Regardless of the method for producing the light absorption layer, all of the methods listed above regarding the formation of the recording layer can be used.
該光吸収層の線吸収係数は、上記記録層で分極の反転を
誘起するに足る充分なエネルギーを吸収する為に、一般
にはl X 1G 30m−’程度以上でなければなら
ない。他方、可飽和色素の量が多過ぎると、その色素の
劣化が起きる事もあり得、光熱変換効率の低下する可能
性がある。また記録層に分散させる場合に色素の量が多
すぎると記録層の絶縁性が減少し、メモリー信号の安定
性の低下及びノイズ成分の上昇を惹起する可能性もある
。The linear absorption coefficient of the light absorption layer must generally be about l x 1G 30m-' or more in order to absorb enough energy to induce polarization reversal in the recording layer. On the other hand, if the amount of the saturated dye is too large, the dye may deteriorate and the light-to-heat conversion efficiency may decrease. Furthermore, if the amount of dye is too large when dispersed in the recording layer, the insulation properties of the recording layer will be reduced, which may cause a decrease in the stability of memory signals and an increase in noise components.
本発明に用いられる基板は電極同様入射光に対して透明
であり、且つ隣接する電極に対して絶縁性を有していれ
ば良い。具体的にはポリエチレン、ポリプロピレンなど
のポリオレフィン、ポリエチレンテレフタレート、ポリ
スチレン、ポリ塩化ビニル、ポリカーボネート、ポリビ
ニルアルコール、ポリビニアセート、ポリアミド、ポリ
イミド、アクリル樹脂、フェノール樹脂、エポキシ樹脂
及び上記の誘導体等の各種プラスチックやガラス、石英
板、セラミックなどを挙げることができる。The substrate used in the present invention only needs to be transparent to incident light like the electrodes and have insulation properties with respect to adjacent electrodes. Specifically, various plastics and glasses such as polyolefins such as polyethylene and polypropylene, polyethylene terephthalate, polystyrene, polyvinyl chloride, polycarbonate, polyvinyl alcohol, polyviniasate, polyamide, polyimide, acrylic resin, phenol resin, epoxy resin, and derivatives of the above, Examples include quartz plates and ceramics.
照射光源はパワー密度が大きく、本発明のメモリーの高
い記録密度を可能にするものが好ましい。これらの条件
を満たすものの一例としてレーザーが有る。レーザーに
は固体レーザー(fPJ、ルビーレーザー Nd−YA
Gレーザー等)、液体レーザー(例、色素レーザー等)
、気体レーザー(例、He−、NeレーザーAr−レー
ザー Ar”レーザー等)及び半導体レーザー等がある
。本発明を利用する上で用いるレーザーの発振波長には
特に制限はなく、一般には上述の如く、記録密度が向上
する様できる丈短波長のものが好ましい。この目的に沿
ってレーザーの発振波長の倍波を得る為に非線形光学特
性を有する波長変換素子をレーザー光の光路に設けても
よい。波長変換素子の具体例としてニオブ酸リチウム、
及びKDP(X112 PO4)等の結晶が知られてい
る。これら種々の要請の中で現状で本発明の光メモリー
を利用する装置の小型軽量化および経済性等を加えて、
総合的に判断すると、現状では上記各種レーザーの中で
半導体レーザーの使用が望ましい。現在実用化されてい
るものとしてはA I GaAs系(発振波長: 7g
0ns)及びGaAs系(発振波長: 830 ns)
等の半導体レーザーを挙げることができる。It is preferable that the irradiation light source has a high power density and enables a high recording density of the memory of the present invention. A laser is an example of a device that satisfies these conditions. The laser is a solid-state laser (fPJ, ruby laser Nd-YA
G laser, etc.), liquid laser (e.g., dye laser, etc.)
, gas lasers (e.g., He-, Ne lasers, Ar-lasers, Ar" lasers, etc.), and semiconductor lasers. There is no particular restriction on the oscillation wavelength of the laser used in the present invention, and generally, as described above, It is preferable to use a long and short wavelength that can improve the recording density.To this end, a wavelength conversion element having nonlinear optical characteristics may be provided in the optical path of the laser beam in order to obtain a double wave of the laser oscillation wavelength. Specific examples of wavelength conversion elements include lithium niobate,
Crystals such as and KDP (X112 PO4) are known. Among these various demands, in addition to the size and weight reduction and economic efficiency of devices that utilize the optical memory of the present invention,
Judging comprehensively, it is currently desirable to use semiconductor lasers among the various lasers mentioned above. The one currently in practical use is the AI GaAs system (oscillation wavelength: 7g).
0 ns) and GaAs system (oscillation wavelength: 830 ns)
Semiconductor lasers such as the following can be mentioned.
以上説明した各要素から構成される本発明の強誘電性高
分子光記録媒体は、大略、光メモリーとして、以下の様
に機能する。即ち、先ず、強い電解を記録層に印加し、
強銹電性高分子の分極を一方向に配向させる(ポーリン
グ処理)。The ferroelectric polymer optical recording medium of the present invention, which is composed of the above-described elements, functions as an optical memory in the following manner. That is, first, a strong electrolyte is applied to the recording layer,
Orienting the polarization of strongly galvanic polymers in one direction (poling process).
次いで、抗電界以下の弱い逆電界存在下に同媒体を置き
、記録層の任意の位置に光ビームを照射する。光の照射
された部分のみで発生した熱は、その部分の分極に限り
反転させる。かくして、選択的、且つ、局所的に記録の
書込みが行われる。この記録の読出しは、光或いは熱に
依る焦電効果を利用して行う。Next, the medium is placed in the presence of a weak reverse electric field that is less than the coercive electric field, and a light beam is irradiated onto an arbitrary position on the recording layer. The heat generated only in the area irradiated with light reverses the polarization only in that area. In this way, records are written selectively and locally. This recording is read using the pyroelectric effect caused by light or heat.
以下実施例をもって本発明を具体的に説明する。本発明
はこれらの実施例のみに限定されるものではない。The present invention will be specifically explained below with reference to Examples. The present invention is not limited only to these examples.
実施例1
5vt%の可飽和色素DNTTCI (770nmに
於ける吸収断面積σ−2,5X 10−” cm’ )
を含む、フッ化ビニリデンと三フッ化エチレンとのコポ
リ? −P (VDF−TrFE)(TrFEのVDF
に対するモル比は317)の溶液を、厚さ 1mmのI
TOガラス上にスピンコード法により、厚さ 1μ霞に
なる様塗布し、更にこの薄膜の乾燥を待って、アルミニ
ウムを蒸着させた。次いでP (VDF−TrFE)の
薄膜に 100vの電圧を印加し、ポーリング処理を行
った。如くして得られたサンプルに25Vの逆電界の存
在下、発振波長7g0nmで照射強度1.8a+Wの半
導体レーザービーム(ビーム半径=2.5μIl)をI
TO電極を通して、P (VDF−TrFE)層に数箇
所照射し情報の書込みを行った。Example 1 5 vt% saturable dye DNTTCI (absorption cross section at 770 nm σ-2,5X 10-''cm')
A copolymer of vinylidene fluoride and ethylene trifluoride containing ? -P (VDF-TrFE) (VDF of TrFE
A solution with a molar ratio of 317) to a 1 mm thick I
It was coated onto TO glass by a spin code method to a thickness of 1 μm, and after this thin film was allowed to dry, aluminum was vapor-deposited. Next, a voltage of 100 V was applied to the P (VDF-TrFE) thin film to perform a poling process. A semiconductor laser beam (beam radius = 2.5μIl) with an oscillation wavelength of 7g0nm and an irradiation intensity of 1.8a+W was applied to the sample thus obtained in the presence of a reverse electric field of 25V.
Information was written by irradiating the P (VDF-TrFE) layer at several locations through the TO electrode.
次に1OkHzで変調され、且つ照射強度の0.16I
IWに減じた上記レーザービームを上記記録層に照射し
、二つの電極間に生じた焦電電流を計測し、情報の読出
しを行った処、そのS/N比は51dBであった。Next, it is modulated at 1OkHz and the irradiation intensity is 0.16I.
The recording layer was irradiated with the laser beam reduced to IW, the pyroelectric current generated between the two electrodes was measured, and information was read, and the S/N ratio was 51 dB.
実施例2
可飽和色素HI T CI (740nmに於けるσ−
4,4X 10’″16 c12 )を用いる他は実施
例1と同じ操作を行い、焦電電流信号のS/N比を測定
した処、53dBであった。Example 2 Saturable dye HIT CI (σ- at 740 nm
The S/N ratio of the pyroelectric current signal was measured by performing the same operation as in Example 1, except that the pyroelectric current signal was 53 dB.
比較例1
可飽和色素を含まないP (VDF−TrFE)を用い
る他は実施例1と同じ操作を行い、焦電電流S/N比を
DI定した処30dBであった。Comparative Example 1 The same operation as in Example 1 was performed except that P (VDF-TrFE) containing no saturated dye was used, and the pyroelectric current S/N ratio was determined to be 30 dB by DI.
比較例2
下記構造式で表わされる金属錯体色素(3vt%)を用
いる他は、実施例1と同じ操作を行い、焦電電流信号の
S/N比を測定した処、45dBであった。Comparative Example 2 The same operation as in Example 1 was performed except that a metal complex dye represented by the following structural formula (3vt%) was used, and the S/N ratio of the pyroelectric current signal was measured and found to be 45 dB.
実施例3
スピンコーティングにより、1III11の厚さの■T
Oガラス上に、TrFEのVDFに対するモル比の、3
/7であるP (VDF−TrFE)溶液を、厚さが1
μlになる様に塗布した。この薄膜の乾燥を待って、可
飽和色素DNTTC1(770nmに於ける吸収断面積
a = 2.5X 110−16a’)を、同じくス
ピンコーティングに依す、厚さが約0.1μmになる様
に塗布した。脱気乾燥後、上部電極として、アルミニウ
ムを蒸着させた。次にP (VDF−TrFE)の薄膜
に、100■の電圧を印加し、ポーリング処理を行った
。かくして得られたサンプルを、2.5Vの逆電界の存
在下に置き、発振波長、照射強度、及び、ビーム径が、
夫々、780nm、18mV、及び2.5μmである半
導体レーザー光を、ITO電極を通じて、P (VDF
−TrFE)層の数箇所に照射し、情報の書込みを行っ
た。Example 3 ■T with a thickness of 1III11 by spin coating
On the O glass, a molar ratio of TrFE to VDF of 3
/7 P (VDF-TrFE) solution with a thickness of 1
It was applied in an amount of μl. Waiting for this thin film to dry, the saturated dye DNTTC1 (absorption cross section at 770 nm a = 2.5X 110-16a') was coated with the same method by spin coating to a thickness of about 0.1 μm. Coated. After degassing and drying, aluminum was deposited as an upper electrode. Next, a voltage of 100 μ was applied to the P (VDF-TrFE) thin film to perform a poling process. The sample thus obtained was placed in the presence of a reverse electric field of 2.5 V, and the oscillation wavelength, irradiation intensity, and beam diameter were
P (VDF
-TrFE) layer was irradiated at several locations to write information.
次に、この情報の読出しを行う為に、1okHzで変調
され、且つ、照射強度を0.18mWに減じた同レーザ
ー光を上記記録層に照射し、上部、及び、下部の両電極
間に生じた焦電電流を計測した。そのS/N比は49d
Bであった。Next, in order to read this information, the same laser beam modulated at 1 kHz and with the irradiation intensity reduced to 0.18 mW is irradiated onto the recording layer, and the light generated between the upper and lower electrodes is The pyroelectric current was measured. Its S/N ratio is 49d
It was B.
実施例4
可飽和色素HI T CI (740na+lこおける
σ−4,4X 10−16cm2)を用いる他は、実施
例3と同じ操作を行い焦電電流を計測した処、そのS/
N比は50dBであった。Example 4 The pyroelectric current was measured by carrying out the same operation as in Example 3 except for using the saturated dye HIT CI (σ-4,4X 10-16 cm2 in 740 na + l).
The N ratio was 50 dB.
[効 果]
以上の説明から明らかなように、本発明の構成にしたが
って、光熱変換効率の乏しいPVD系重合体記録層中に
可飽和色素を分散、混合することによって、あるいは該
記録層近傍に可飽和色素を含む光吸収層を設けることに
よって該効率を向上せしめ、PVD系重合体を記録層と
する強誘電性高分子光記録媒体の感度を増大せしめるこ
とができ、半導体レーザーのような低いパワーの照射光
に対しても極めて鋭敏に反応して、書き込み、読み出し
及び消去という一連の動作を行うことができるという顕
著な効果を奏するものである。[Effect] As is clear from the above explanation, according to the structure of the present invention, by dispersing and mixing a saturated dye in a PVD polymer recording layer with poor light-to-heat conversion efficiency, or by dispersing and mixing a saturated dye in the vicinity of the recording layer. By providing a light absorption layer containing a saturated dye, the efficiency can be improved and the sensitivity of a ferroelectric polymer optical recording medium with a recording layer made of a PVD polymer can be increased. It has the remarkable effect of being able to react extremely sensitively to high-power irradiation light and perform a series of operations such as writing, reading, and erasing.
第1図は本発明の強誘電性高分子記録媒体のうち記録°
層中に可飽和色素を分散した場合の構成を説明する図、
第2図は同記録媒体において光吸収層を設けた場合の構
成を説明する図、第3図a〜第3図eは光吸収層と記録
層とを積層構造とした場合の各埋態様を説明する図。
■・・・記録層、2・・・下部電極、3・・・基板、4
・・・上部電極、5・・・光吸収層。Figure 1 shows the recording temperature of the ferroelectric polymer recording medium of the present invention.
A diagram illustrating the configuration when a saturated dye is dispersed in a layer,
FIG. 2 is a diagram explaining the structure when a light absorption layer is provided in the same recording medium, and FIGS. Diagram to explain. ■... Recording layer, 2... Lower electrode, 3... Substrate, 4
... Upper electrode, 5... Light absorption layer.
Claims (1)
分子光記録媒体において、該記録層がそこに分散された
一種以上の可飽和色素を含むか、あるいは該記録層の近
傍に設けた可飽和色素を含む光吸収層を有することを特
徴とする強誘電性高分子光記録媒体。In a ferroelectric polymer optical recording medium having a recording layer made of a vinylidene polymer, the recording layer contains one or more saturated dyes dispersed therein, or a saturated dye provided near the recording layer. A ferroelectric polymer optical recording medium characterized by having a light absorption layer containing a dye.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1084878A JPH02257492A (en) | 1988-12-09 | 1989-04-05 | Ferroelectric high-polymer optical recording medium |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30987788 | 1988-12-09 | ||
JP63-309877 | 1988-12-09 | ||
JP1084878A JPH02257492A (en) | 1988-12-09 | 1989-04-05 | Ferroelectric high-polymer optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02257492A true JPH02257492A (en) | 1990-10-18 |
Family
ID=26425852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1084878A Pending JPH02257492A (en) | 1988-12-09 | 1989-04-05 | Ferroelectric high-polymer optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02257492A (en) |
-
1989
- 1989-04-05 JP JP1084878A patent/JPH02257492A/en active Pending
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