JPH0225246Y2 - - Google Patents

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Publication number
JPH0225246Y2
JPH0225246Y2 JP1983093125U JP9312583U JPH0225246Y2 JP H0225246 Y2 JPH0225246 Y2 JP H0225246Y2 JP 1983093125 U JP1983093125 U JP 1983093125U JP 9312583 U JP9312583 U JP 9312583U JP H0225246 Y2 JPH0225246 Y2 JP H0225246Y2
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JP
Japan
Prior art keywords
substrate
photoelectric conversion
group
conductor film
connection terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1983093125U
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Japanese (ja)
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JPS60965U (en
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Priority to JP9312583U priority Critical patent/JPS60965U/en
Publication of JPS60965U publication Critical patent/JPS60965U/en
Application granted granted Critical
Publication of JPH0225246Y2 publication Critical patent/JPH0225246Y2/ja
Granted legal-status Critical Current

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Description

【考案の詳細な説明】 本考案は、混成集積回路装置に関し、特に複数
の回路板を接続して構成される混成集積回路装置
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a hybrid integrated circuit device, and particularly to a hybrid integrated circuit device configured by connecting a plurality of circuit boards.

従来例えばフアクシミリ装置の原稿画信号読取
りデバイスは、ICセンサと称されるMOSやCCD
等の一次元アレイが用いられていたが、縮小光学
系の光路長は20cm〜30cm程度必要となり、装置の
小形化が困難で経済性に問題があつた。このこと
から原稿幅と1対1に対応する長尺化された読取
りデバイスを採り入れ、前記縮小光学系を30mm程
度以下とする小型装置が実用化されつゝある。当
然読取りデバイスを構成する機能素子は、大面積
の基板上の全域に亘り均一で、かつ無欠陥微細配
線の実現が要求される。
Conventionally, for example, the document image signal reading device of a facsimile machine uses a MOS or CCD sensor called an IC sensor.
A one-dimensional array such as the above was used, but the optical path length of the reduction optical system was required to be about 20 cm to 30 cm, making it difficult to miniaturize the device and causing problems in terms of economy. For this reason, compact devices are being put into practical use that incorporate a long reading device that corresponds one-to-one with the document width, and that reduce the size of the reduction optical system to about 30 mm or less. Naturally, the functional elements constituting the reading device are required to be uniform over the entire area of a large-area substrate and to realize defect-free fine wiring.

第1図は従来の密着形読取りデバイスの一例の
断面図である。
FIG. 1 is a sectional view of an example of a conventional contact type reading device.

このデバイスは、透明なガラス基板1上に光電
変換素子アレイ部と、この光電変換素子を動作さ
せるための駆動回路部とを形成したものである。
ガラス基板1の寸法は、例えばA4判の原稿画を
読取る場合には幅50mm、長さ250mm程の大面積基
板が必要とされる。ガラス基板1の上に透明な共
通電極2を形成し、この上に例えばアモルフアス
シリコンから成る光電変換材3を形成する。更に
この上にそれぞれが分離された高密度個別電極4
を形成する。また、駆動回路部の下層電極8を形
成し、次に絶縁層9、上層電極5からなる多層配
線部を形成する。最後に駆動用IC6を固着し、
その電極と個別電極4間にリード線7をボンデイ
ングし基本構造を完成させる。なお原稿からの信
号光10は基板1の下方から受光する。駆動用
IC6には個別電極4の数と密度に対応した電極
数が存在することになり例えば、A4判、8本/
mmの大きさの読取りデバイスを構成するために
は、約2000個の素子数規模となる。従つて、駆動
用IC6のチツプの数は集積度によつて異なるが
約50個の多数のICがガラス基板1上に実装され
ることになる。このように多くの回路素子が大面
積の一枚基板上に構成されている。
This device has a photoelectric conversion element array section and a drive circuit section for operating the photoelectric conversion elements formed on a transparent glass substrate 1.
Regarding the dimensions of the glass substrate 1, for example, when reading an A4 size original image, a large-area substrate of about 50 mm in width and 250 mm in length is required. A transparent common electrode 2 is formed on a glass substrate 1, and a photoelectric conversion material 3 made of, for example, amorphous silicon is formed on this. Furthermore, on top of this, high-density individual electrodes 4 are each separated.
form. Further, a lower layer electrode 8 of the drive circuit section is formed, and then a multilayer wiring section consisting of an insulating layer 9 and an upper layer electrode 5 is formed. Finally, fix the drive IC6,
A lead wire 7 is bonded between the electrode and the individual electrode 4 to complete the basic structure. Note that the signal light 10 from the original is received from below the substrate 1. For driving
The IC6 has the number of electrodes corresponding to the number and density of the individual electrodes 4, so for example, for A4 size, 8 electrodes/
To construct a reading device with a size of mm, the number of elements is approximately 2000. Therefore, although the number of chips of the driving IC 6 varies depending on the degree of integration, a large number of ICs, approximately 50, are mounted on the glass substrate 1. In this way, many circuit elements are constructed on a single, large-area substrate.

通常、この種の光電変換を行なう読取りデバイ
スの電気信号レベルは10-6A以下の非常に小さい
値である。従つて、各個別電極4相互間は確実に
分離し、充分な絶縁性を持たせておく必要がある
と同時に断線もあつてはならない。ところが、ガ
ラス基板1の上には駆動回路部、光電変換素子部
それぞれが全域に亘つて高密度に配線されている
ため、とかく前述の欠陥部分が発生し易く、画像
光10に関係なく電気信号が流れたり、あるいは
画像光10に反応しなかつたりするようなことが
起る問題があつた。また、このような欠陥を無く
すために、厳密な検査を長時間繰り返し、無欠陥
であることの確認を必要とし、ガラス基板1上の
唯一ケ所に欠陥があつても実用できないので経済
性に問題があつた。
Typically, the electrical signal level of a reading device that performs this type of photoelectric conversion is very small, less than 10 -6 A. Therefore, it is necessary to ensure that the individual electrodes 4 are separated from each other and have sufficient insulation, and at the same time, there must be no disconnection. However, since the driving circuit section and the photoelectric conversion element section are wired with high density over the entire area on the glass substrate 1, the aforementioned defective parts are likely to occur, and the electrical signals are not transmitted regardless of the image light 10. There have been problems in which the image light 10 may flow or not react to the image light 10. In addition, in order to eliminate such defects, it is necessary to repeat strict inspections for a long time to confirm that there are no defects, and even if there is a defect in only one place on the glass substrate 1, it cannot be put into practical use, which poses an economical problem. It was hot.

この他、駆動回路部には絶縁層9を上層電極
5、下層電極8で挾んだ多層配線部が存在する。
この絶縁層9の絶縁性劣化はそのまま読取りデバ
イスの性能劣化につながり、この部分の電気特性
が支配的となる。ところが、アモルフアスシリコ
ンのような光電変換材3を形成した後に多層配線
部を形成する時、基板1全体を絶縁層9が充分絶
縁性を発揮する硬化温度にすると、光電変換材3
の電気特性に影響する。このため低温で硬化しな
ければならず、不安定で信頼性の無い絶縁層9の
まま使用することになる。また、この形成順を逆
にして多層配線を先に作成し、次に光電変換素子
部を形成する場合には絶縁層9自体の性能は向上
するが、この部分の段差による影響で、個別電極
4の微細配線パターン化が困難となり、さらに光
電変換材3の形成時に、不必要な不純物の混入が
起り光電変換特性を劣化させる等の欠点があつ
た。
In addition, the drive circuit section includes a multilayer wiring section in which an insulating layer 9 is sandwiched between an upper layer electrode 5 and a lower layer electrode 8.
This deterioration in the insulation properties of the insulating layer 9 directly leads to deterioration in the performance of the reading device, and the electrical characteristics of this portion become dominant. However, when forming a multilayer wiring section after forming a photoelectric conversion material 3 such as amorphous silicon, if the entire substrate 1 is brought to a curing temperature at which the insulating layer 9 exhibits sufficient insulation, the photoelectric conversion material 3
affects the electrical properties of Therefore, the insulating layer 9 must be cured at a low temperature, resulting in unstable and unreliable use of the insulating layer 9 as it is. In addition, if this order of formation is reversed and the multilayer wiring is created first and then the photoelectric conversion element section is formed, the performance of the insulating layer 9 itself improves, but due to the effect of the step in this part, the individual electrodes It became difficult to form a fine wiring pattern in the photoelectric conversion material 3, and furthermore, unnecessary impurities were mixed in during the formation of the photoelectric conversion material 3, resulting in deterioration of the photoelectric conversion characteristics.

本考案の目的は、上記欠点を除去し、経済性、
信頼性に優れ、読取りデバイスに限らず実用に供
し得るようにした混成集積回路装置を提供するこ
とにある。
The purpose of this invention is to eliminate the above drawbacks, improve economy,
It is an object of the present invention to provide a hybrid integrated circuit device which has excellent reliability and can be used not only as a reading device but also in practical use.

本考案の混成集積回路装置は、一主面上に回路
素子群と接続端子群とが形成された回路板を複数
個と、円筒形絶縁体の側面に前記接続端子群に対
応して導体膜が設けられ、該導体膜が前記複数の
回路板のうちの少くとも一つの回路板の接続端子
群と接続し、かつ他の一つの回路板の接続端子群
と直接にもしくは平板状接続具を介して接続する
円筒状接続具とを含み、前記導体膜配線間距離
N0と前記接続端子配線間距離Nとの関係が、N
=N0/2n(n=1以上の実数)にあることを特徴
としている。
The hybrid integrated circuit device of the present invention includes a plurality of circuit boards each having a group of circuit elements and a group of connection terminals formed on one main surface, and a conductor film on the side surface of a cylindrical insulator corresponding to the group of connection terminals. is provided, and the conductive film is connected to a group of connection terminals of at least one circuit board of the plurality of circuit boards, and is connected to a group of connection terminals of another circuit board directly or by a flat connector. and a cylindrical connector connected through the conductor film wiring, and the distance between the conductive film wirings
The relationship between N 0 and the distance N between the connecting terminal wires is N
=N 0 /2n (n = real number greater than or equal to 1).

本考案により、前記のように構成される混成集
積回路装置は、回路板を機能別に分割している。
従つて、各機能素子群毎に単独に最適な条件で製
作できるため、それぞれが高性能で高信頼の混成
集積回路基板を実現することができる。また微細
配線パターンを検査する場合でも、小さく分割さ
れているために面積的に有利となり容易に良否の
判定ができるようになる。この結果、完全に無欠
陥の機能素子群を容易に製作でき、それぞれを接
続するだけで良く、容易にシステム化された混成
集積回路装置が得られる。特にフアクシミリ装置
の読取りデバイス、感熱記録ヘツド等のように大
判化された基板を用いる場合には、各機能素子毎
に分割し、できるだけ基板寸法を小さくした方が
各種膜形成装置への収容枚数が増加し、量産性に
適するようにもなる。
According to the present invention, the hybrid integrated circuit device configured as described above has a circuit board divided according to functions.
Therefore, since each functional element group can be manufactured individually under optimal conditions, a hybrid integrated circuit board with high performance and high reliability can be realized. Furthermore, even when inspecting a fine wiring pattern, since it is divided into small pieces, it is advantageous in terms of area and it becomes possible to easily judge whether it is good or bad. As a result, it is possible to easily manufacture a completely defect-free functional element group, and it is only necessary to connect each element, thereby obtaining a hybrid integrated circuit device that is easily systemized. Particularly when using large-sized substrates such as facsimile reading devices, thermal recording heads, etc., it is better to divide the substrate into individual functional elements and reduce the substrate size as much as possible to reduce the number of substrates that can be accommodated in various film forming devices. It also becomes suitable for mass production.

本考案の実施例について図面を用いて説明す
る。
Embodiments of the present invention will be described with reference to the drawings.

第2図は本考案の第1の実施例の図である。 FIG. 2 is a diagram of a first embodiment of the present invention.

長さ250mm程のガラス基板21の上にITO等か
らなる透明共通電極22、アモルフアスシリコン
からなる光電変換材膜23、1mm当り8本の配線
密度をもつ約2000個の分離された個別電極24の
基本構成からなる光電変換素子部と、他の絶縁性
基板211の上に個別電極24と同一配線密度と
配線数で直線状に配列された接続端子241、下
層電極28、ポリイミド樹脂等からなる絶縁層2
9、外部引出線にもなる上層電極25による多層
配線部を設け、さらに駆動用IC26を実装し、
そのICの端子からボンデイング線27によつて
基板上の配線電極と接続する。即ち、この読取デ
バイスは光電変換素子部と駆動回路部との2つの
機能部分に基板は分割されている。そして前記ガ
ラス基板21上の個別電極24と、他の絶縁性基
板211上の接続端子241とは互いに相対して
配置され円筒状絶縁体円周面に導体膜が形成され
た円筒状接続具31を介在させ、これにそれぞれ
を圧接して電気的に接続する。
A transparent common electrode 22 made of ITO or the like, a photoelectric conversion material film 23 made of amorphous silicon, and about 2000 separated individual electrodes 24 with a wiring density of 8 wires per 1 mm are placed on a glass substrate 21 with a length of about 250 mm. It consists of a photoelectric conversion element section consisting of the basic structure of, connection terminals 241 arranged linearly on another insulating substrate 211 with the same wiring density and number of wiring as the individual electrodes 24, a lower layer electrode 28, polyimide resin, etc. Insulating layer 2
9. Provide a multilayer wiring section with upper layer electrodes 25 that also serve as external lead lines, and further mount a driving IC 26,
A terminal of the IC is connected to a wiring electrode on the substrate by a bonding wire 27. That is, the substrate of this reading device is divided into two functional parts: a photoelectric conversion element part and a drive circuit part. The individual electrodes 24 on the glass substrate 21 and the connection terminals 241 on the other insulating substrate 211 are arranged opposite to each other, and a cylindrical connector 31 is formed with a conductor film formed on the circumferential surface of the cylindrical insulator. are interposed, and the two are electrically connected by pressure contact.

第3図は第2図に示す円筒状接続具の平面図で
ある。
FIG. 3 is a plan view of the cylindrical connector shown in FIG. 2.

長さ250mm程度の円筒状ガラス棒32の側面に
導体膜33を被着形成する。導体膜33は、個別
電極24、接続端子241等とに比べて2倍以上
の配線密度に分離され電気的に絶縁されている。
導体膜33はAu,Cu,A等の通常電極材料と
して使用されているものであり、均一な膜厚に形
成されている。この導体膜33は上下に設置され
た回路板間を電気的接続を行うためなので、断面
で最低180度の円周角に形成されてあれば良い。
A conductive film 33 is formed on the side surface of a cylindrical glass rod 32 having a length of about 250 mm. The conductor film 33 is separated and electrically insulated with a wiring density that is more than twice that of the individual electrodes 24, connection terminals 241, and the like.
The conductive film 33 is made of Au, Cu, A, etc., which are commonly used as electrode materials, and is formed to have a uniform thickness. Since this conductor film 33 is used to electrically connect circuit boards installed above and below, it is sufficient that the conductor film 33 is formed to have a circumferential angle of at least 180 degrees in cross section.

このような構造の密着形読取りデバイスは、画
像光10を下方から受けるので光電変換部の基板
21は透明なガラス製である必要があるが、駆動
回路部の基板211は透明である必要が無く駆動
用IC26のダイボンデイング工程、ワイヤボン
デイング工程を確実にしかも安定に行なえるよう
に熱的に安定な他の基板材料を使うことができ
る。光電変換材23として用いたアモルフアスシ
リコンは、通常200℃前後から劣化するので、従
来のように一枚基板上に全素子を形成する場合に
は光電変換特性の劣化が観察されていたがこれが
皆無となる。またポリイミド樹脂等からなる絶縁
層29も充分高温硬化が出来るようになるので安
定な多層配線部が形成され、10-6A以下の微弱光
信号の読取りに対しても絶縁不良を起すようなこ
とは無くなる。また厚膜技術によるガラス絶縁材
等も使用できるようになる。一方、光電変換素子
部を構成するガラス基板にはアモルフアスシリコ
ン膜形成時に悪影響を与えるような材料は被着さ
れておらず、高性能な光電変換材膜を得ることが
できるようになる。また個々の基板幅も従来の1/
2〜1/3程度の大きさが可能となり、膜形成時に、
製造装置への同時収容数の増加、欠陥素子および
配線不良の検査工数の減少等によつて非常に量産
性に適した構造となる。
Since the contact type reading device with such a structure receives the image light 10 from below, the substrate 21 of the photoelectric conversion section needs to be made of transparent glass, but the substrate 211 of the drive circuit section does not need to be transparent. Other thermally stable substrate materials can be used so that the die bonding process and wire bonding process of the driving IC 26 can be performed reliably and stably. The amorphous silicon used as the photoelectric conversion material 23 usually deteriorates at around 200°C, so when all the elements were conventionally formed on a single substrate, deterioration of the photoelectric conversion characteristics was observed. There will be none. Furthermore, since the insulating layer 29 made of polyimide resin or the like can be cured at a sufficiently high temperature, a stable multilayer wiring section is formed, and insulation failure will not occur even when reading weak optical signals of 10 -6 A or less. disappears. It also becomes possible to use glass insulation materials made using thick film technology. On the other hand, the glass substrate constituting the photoelectric conversion element section is not coated with any material that would adversely affect the formation of the amorphous silicon film, making it possible to obtain a high-performance photoelectric conversion material film. Also, the width of each individual board is 1/1/2 that of the conventional one.
It is possible to reduce the size by about 2 to 1/3, and when forming a film,
The structure is very suitable for mass production by increasing the number of devices that can be accommodated simultaneously in the manufacturing equipment and reducing the number of man-hours required for inspecting defective elements and wiring defects.

第4図は本考案の第2の実施例の断面図であ
る。
FIG. 4 is a sectional view of a second embodiment of the present invention.

この実施例は感熱記録ヘツドの例である。この
実施例は、アルミナセラミツク基板41上に抵抗
体44、リード電極42、耐摩耗層43が形成さ
れ発熱体部と、他のセラミツク基板411に接続
端子部451、外部回路への入出力端子45が形
成され、これら端子から駆動用IC46の端子へ
リード線47をボンデイングした駆動回路部とか
ら成る。入出力端子45部分には、下層電極4
8、絶縁層49よりなる多層配線が形成され、そ
れぞれの基板の主平面は同一平面上に配置されて
いる。発熱部基板41上のリード電極45と駆動
回路部の接続端子451は、例えば1mm当り8本
の高密度の微細配線が直線状に約250mmの長さに
わたつて配列されている。さらにこの部分には第
3図で示した接続具31をそれぞれ各1個設置
し、同一配線密度の導体膜52をもつた平板状接
続具51を介在させ接続されている。
This embodiment is an example of a thermal recording head. In this embodiment, a resistor 44, a lead electrode 42, and an abrasion resistant layer 43 are formed on an alumina ceramic substrate 41, and a heating element is formed on the other ceramic substrate 411. is formed, and a drive circuit section in which lead wires 47 are bonded from these terminals to the terminals of the drive IC 46. The lower layer electrode 4 is located at the input/output terminal 45 portion.
8. A multilayer wiring made of an insulating layer 49 is formed, and the main planes of each substrate are arranged on the same plane. The lead electrodes 45 on the heat generating part substrate 41 and the connection terminals 451 of the drive circuit part are formed by, for example, eight high-density fine wirings per 1 mm arranged in a straight line over a length of about 250 mm. Furthermore, one connection tool 31 shown in FIG. 3 is installed in each of these parts, and the connections are made with a flat connection tool 51 having a conductive film 52 having the same wiring density interposed therebetween.

このような構造の感熱記録ヘツドは第2図に示
した実施例で述べた特長を有する他、それぞれを
同一平面上に配置したことによつて、平担化さ
れ、基板上面に形成された発熱抵抗体上に感熱記
録紙が圧接され、摺動しながらの記録が容易に行
なえるような構造にできる。
The heat-sensitive recording head having such a structure has the features described in the embodiment shown in FIG. The heat-sensitive recording paper is pressed onto the resistor, so that it can be structured so that recording can be easily performed while sliding.

上記実施例においては基板材料としてガラス基
板、セラミツク基板、接続具材料としてガラス棒
を使用したが、これに限定されない。また接続具
の円周表面に形成した導体の配線密度は各機能素
子が形成された基板上の導体あるいは接続端子の
配線密度の2倍以上に形成されているので、とく
に各基板と圧接する際に位置合せを必要とせず任
意の位置に配置しても電気的接続が可能となる有
利さも発生する。
In the above embodiments, a glass substrate or a ceramic substrate was used as the substrate material, and a glass rod was used as the connector material, but the present invention is not limited thereto. In addition, since the wiring density of the conductor formed on the circumferential surface of the connecting tool is more than twice the wiring density of the conductor or connection terminal on the board on which each functional element is formed, it is especially important when making pressure contact with each board. Another advantage is that electrical connection is possible even when placed at any position without requiring alignment.

また、上記実施例においては円筒状接続具と回
路基板間の接続は圧接で行われる構造で説明した
が、これに限定されない。例えば、半田の如き低
融点金属膜を被着せしめ、圧接したる後、加熱に
より低融点金属膜を溶融せしめることでより強固
な接続を実現することができる。
Further, in the above embodiments, the connection between the cylindrical connector and the circuit board is performed by pressure welding, but the present invention is not limited to this. For example, a stronger connection can be achieved by applying a low melting point metal film such as solder and press-welding, and then melting the low melting point metal film by heating.

以上詳細に説明したように、本考案によれば、
円筒状接続具の使用によつて回路基板間の接続が
容易となり、従つて個々の機能回路素子群を最適
条件下で製作できるようになるため、総合的に製
作が容易かつ経済的となり、信頼性の高い動作が
確保できる混成集積回路装置を得ることができ
る。
As explained in detail above, according to the present invention,
The use of cylindrical connectors facilitates the connections between circuit boards and therefore allows individual functional circuit elements to be manufactured under optimal conditions, making overall manufacturing easier, more economical, and more reliable. Accordingly, it is possible to obtain a hybrid integrated circuit device that can ensure highly efficient operation.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の密着形読取りデバイスの一例の
断面図、第2図は本考案の第1の実施例の断面
図、第3図は第2図に示す円筒状接続具の平面
図、第4図は本考案の第2の実施例の断面図であ
る。 1,21……ガラス基板、2,22……透明電
極、3,23……光電変換材、4,24……個別
電極、5,25,45……上層電極、6,26,
46……駆動用IC、7,27,47……ボンデ
イング線、8,28,48……下層電極、9,2
9,49……絶縁層、10……信号光、41,4
11……絶縁基板、241,451……接続端
子、31……円筒状接続具、32……ガラス丸
棒、33,52……導体膜、42……リード電
極、43……耐摩耗層、44……抵抗体、51…
…平板状接続具、52……導体膜、53……絶縁
基板、211……絶縁基板、451……接続端子
部。
FIG. 1 is a sectional view of an example of a conventional contact type reading device, FIG. 2 is a sectional view of a first embodiment of the present invention, and FIG. 3 is a plan view of the cylindrical connector shown in FIG. FIG. 4 is a sectional view of a second embodiment of the present invention. 1, 21... Glass substrate, 2, 22... Transparent electrode, 3, 23... Photoelectric conversion material, 4, 24... Individual electrode, 5, 25, 45... Upper layer electrode, 6, 26,
46... Drive IC, 7, 27, 47... Bonding line, 8, 28, 48... Lower layer electrode, 9, 2
9,49...Insulating layer, 10...Signal light, 41,4
11... Insulating substrate, 241,451... Connection terminal, 31... Cylindrical connector, 32... Glass round bar, 33, 52... Conductor film, 42... Lead electrode, 43... Wear-resistant layer, 44...Resistor, 51...
... Flat connector, 52 ... Conductor film, 53 ... Insulating substrate, 211 ... Insulating substrate, 451 ... Connection terminal portion.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一主平面上に回路素子群と接続端子群とが形成
された回路板を複数個と、円筒形絶縁体の側面に
前記接続端子群に対応して導体膜が設けられ、該
導体膜が前記回路板のうちの少なくとも一つの回
路板の接続端子群と接続し、かつ他の一つの回路
板の接続端子群と直接にもしくは平板状接続具を
介して接続する円筒状接続具とを含み、前記導体
膜配線間距離N0と、前記接続端子配線間距離N
との関係が、N=N0/2n(n=1以上の実数)に
あることを特徴とする混成集積回路。
A plurality of circuit boards each having a circuit element group and a connection terminal group formed on one principal plane are provided, and a conductor film is provided on a side surface of a cylindrical insulator corresponding to the connection terminal group, and the conductor film is connected to the connection terminal group. A cylindrical connector that connects to a group of connection terminals on at least one of the circuit boards and connects to a group of connection terminals on another circuit board directly or via a flat connector, The distance N 0 between the conductor film wirings and the distance N between the connection terminal wirings
A hybrid integrated circuit characterized in that the relationship between the two is N=N 0 /2n (n=a real number of 1 or more).
JP9312583U 1983-06-17 1983-06-17 Hybrid integrated circuit device Granted JPS60965U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9312583U JPS60965U (en) 1983-06-17 1983-06-17 Hybrid integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9312583U JPS60965U (en) 1983-06-17 1983-06-17 Hybrid integrated circuit device

Publications (2)

Publication Number Publication Date
JPS60965U JPS60965U (en) 1985-01-07
JPH0225246Y2 true JPH0225246Y2 (en) 1990-07-11

Family

ID=30223758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9312583U Granted JPS60965U (en) 1983-06-17 1983-06-17 Hybrid integrated circuit device

Country Status (1)

Country Link
JP (1) JPS60965U (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54163764U (en) * 1978-05-10 1979-11-16

Also Published As

Publication number Publication date
JPS60965U (en) 1985-01-07

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