JPH02250510A - Operational amplifier - Google Patents

Operational amplifier

Info

Publication number
JPH02250510A
JPH02250510A JP1072563A JP7256389A JPH02250510A JP H02250510 A JPH02250510 A JP H02250510A JP 1072563 A JP1072563 A JP 1072563A JP 7256389 A JP7256389 A JP 7256389A JP H02250510 A JPH02250510 A JP H02250510A
Authority
JP
Japan
Prior art keywords
transistor
operational amplifier
bias
circuit
bias circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1072563A
Other languages
Japanese (ja)
Other versions
JPH0744393B2 (en
Inventor
Kenji Shiraki
白木 賢二
Yuki Kurose
黒瀬 由貴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1072563A priority Critical patent/JPH0744393B2/en
Publication of JPH02250510A publication Critical patent/JPH02250510A/en
Publication of JPH0744393B2 publication Critical patent/JPH0744393B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To simplify the constitution of a bias circuit together with reduction of the power consumption for an operational amplifier by setting the levels of the bias power supplies applied to the gates of the cascaded transistors at the potential of a non-inverted input terminal. CONSTITUTION:The gates of N channel depletion type MOS transistors TR M11 and M12 are set at a 3rd constant potential source ACM. Thus it is possible to prevent the influence of the parasitic capacity produced between an inverted input terminal and the drain of a TR M1 and therefore to need no bias circuit which produces the bias power supplies to be applied to the gates of both TR M11 and M12. Thus the constitution of a bias circuit is simplified and the power consumption is reduced for an operational amplifier.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、演算増幅器に関し、特にスイッチトキャパシ
タ回路に用いられ、初段がカスケード構造になっている
演算増幅器に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an operational amplifier, and particularly to an operational amplifier that is used in a switched capacitor circuit and whose first stage has a cascade structure.

〔従来の技術〕[Conventional technology]

従来、スイッチトキャパシタフィルタに用いられる演算
増幅器は入力トランジスタのゲート・ソース間及びゲー
ト・ドレイン間に発生する寄生容量の影響を防ぐため、
第3図に示すように初段1がカスケード構造になってい
る。初段差動増幅回路lは電流源トランジスタM35か
ら定電流を共通に受ける差動トランジスタM31とM3
2と、反転入力端子VIN−とトランジスタM31のド
レインとの間に発生する寄生容量の影響を防ぐためのト
ランジスタM41とM42と、その能動負荷トランジス
タM33とM34からなっている。
Conventionally, operational amplifiers used in switched capacitor filters are designed to prevent the effects of parasitic capacitance that occurs between the gate and source and between the gate and drain of the input transistor.
As shown in FIG. 3, the first stage 1 has a cascade structure. The first stage differential amplifier circuit l includes differential transistors M31 and M3 that commonly receive a constant current from a current source transistor M35.
2, transistors M41 and M42 for preventing the influence of parasitic capacitance generated between the inverting input terminal VIN- and the drain of the transistor M31, and their active load transistors M33 and M34.

第2段増幅回路2は、電流源トランジスタM36と、初
段差動増幅回路1からの信号を受ける出力トランジスタ
M37と、位相補償用のトランジスタM30および容量
C1からなっている。また、バイアス回路3は、電流源
工、とトランジスタM38とで電流源トランジスタM3
5.M36にバイアス電圧VBIを与えており、バイア
ス回路4は、電流源工、とトランジスタM39.M40
とで、トランジスタM41.M42にバイアス電圧VB
2を与えている。VDDは第1定電位源、GNDは第2
定電位源、ACMは差動増幅器の信号の基準レベルであ
る第3定電位源、VOUTは出力端子である。また、M
31.M32.M35゜M2O,M2S、M39.M2
O,M41.M42はNチャネル型のMOS)ランジス
タ、M2O,M33、M34.M37はNチャネル型の
MOS)ランジスタである。
The second stage amplifier circuit 2 includes a current source transistor M36, an output transistor M37 that receives a signal from the first stage differential amplifier circuit 1, a phase compensation transistor M30, and a capacitor C1. Further, the bias circuit 3 includes a current source transistor M38 and a current source transistor M38.
5. A bias voltage VBI is applied to M36, and the bias circuit 4 includes a current source and a transistor M39. M40
and transistor M41. Bias voltage VB to M42
It is giving 2. VDD is the first constant potential source, GND is the second
A constant potential source ACM is a third constant potential source which is a reference level of a signal of the differential amplifier, and VOUT is an output terminal. Also, M
31. M32. M35゜M2O, M2S, M39. M2
O, M41. M42 is an N-channel type MOS) transistor, M2O, M33, M34 . M37 is an N-channel type MOS transistor.

従来の演算増幅器は、バイアス電源VB2をバイアス回
路4によって与えているので、バイアス回路が複雑にな
り、消費電力も大きくなるという欠点がある。
In the conventional operational amplifier, the bias power supply VB2 is provided by the bias circuit 4, which has the disadvantage that the bias circuit becomes complicated and the power consumption increases.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の演算増幅器は、バイアス回路が複雑で、
消費電力が大きいという欠点があった。
The conventional operational amplifier mentioned above has a complex bias circuit,
It had the disadvantage of high power consumption.

本発明はバイアス回路を簡単にして、電力消費の小さい
演算増幅器を提供することを目的とする。
An object of the present invention is to simplify the bias circuit and provide an operational amplifier with low power consumption.

〔課題を解決するための手段〕[Means to solve the problem]

本発明によれば、定電流源と、この定電流源からの定電
流を各ソースに受ける第1および第2の電界効果トラン
ジスタと、第1の電界効果トランジスタのドレインにソ
ースが接続された第3の電界効果トランジスタと、これ
ら第2および第3の電界効果トランジスタの各ドレイン
にそれぞれ接続された負荷として働く第4および第5の
電界効果トランジスタをそれぞれ含む第1および第2の
負荷回路と、第1の電界効果トランジスタのゲートに接
続された入力端子と、第2および第3の電界効果トラン
ジスタの各ゲートに接続された定電位源と、第4又は第
5の電界効果トランジスタのドレインに接続された出力
端子とを有する演算増幅器を得る。
According to the present invention, a constant current source, first and second field effect transistors each receiving a constant current from the constant current source at their respective sources, and a first field effect transistor whose source is connected to the drain of the first field effect transistor. first and second load circuits each including a No. 3 field effect transistor and a fourth and a fifth field effect transistor serving as loads connected to respective drains of the second and third field effect transistors; An input terminal connected to the gate of the first field effect transistor, a constant potential source connected to each gate of the second and third field effect transistors, and connected to the drain of the fourth or fifth field effect transistor. An operational amplifier is obtained having an output terminal.

このように、本発明によれば、第2および第3の電界効
果トランジスタのゲートは共通の定電位源に接続されて
いるので、定電位源の数が少なくて済み、バイアス回路
が簡単で、消費電力も小さくできる。
As described above, according to the present invention, the gates of the second and third field effect transistors are connected to a common constant potential source, so the number of constant potential sources is small, and the bias circuit is simple. Power consumption can also be reduced.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図に本発明の一実施例の回路図を示す。図において
、1は初段差動増幅回路、2は第2段増幅回路、3はバ
イアス回路、VIN−は反転入力端子、VOUTは出力
端子である。また、VDDは第1電源、GNDは第2定
電位源、ACMは第3定電位源、VBはバイアス電源で
ある。また、Ml、M2はNチャネル初段差動pMO8
)ランジスタ、M3.M4はPチャネル負荷MO8)ラ
ンジスタ、M5.MeはNチャネル定電流源MOSトラ
ンジスタ、M7は駆動段PチャネルMOSトランジスタ
M8は、バイアス電源VBをつくるバイアス回路のNチ
ャネルMOS)ランジスタ、Ml 1、Ml 2は演算
増幅器の基準レベルであり、M2のゲート電位である第
3定電位源ACMにバイアスされたNチャネルディブリ
ッション型MOSトランジスタである。またC1は位相
補償容量でとの容量CIおよびPチャネルMO8)ラン
ジスタMOのオン抵抗の直列接続で形成される帰還ルー
プにより、位相補償および零補償回路が構成されている
。また工は電流源である。
FIG. 1 shows a circuit diagram of an embodiment of the present invention. In the figure, 1 is a first-stage differential amplifier circuit, 2 is a second-stage amplifier circuit, 3 is a bias circuit, VIN- is an inverting input terminal, and VOUT is an output terminal. Further, VDD is a first power source, GND is a second constant potential source, ACM is a third constant potential source, and VB is a bias power source. In addition, Ml and M2 are N-channel first-stage differential pMO8
) transistor, M3. M4 is a P-channel load MO8) transistor, M5. Me is an N-channel constant current source MOS transistor, M7 is a drive stage P-channel MOS transistor, M8 is an N-channel MOS transistor of the bias circuit that creates the bias power supply VB, Ml 1 and Ml 2 are reference levels of the operational amplifier, and M2 This is an N-channel desorption type MOS transistor biased by a third constant potential source ACM having a gate potential of . Further, C1 is a phase compensation capacitor, and a feedback loop formed by a series connection of a capacitor CI and an on-resistance of a P-channel transistor MO constitutes a phase compensation and zero compensation circuit. In addition, the electric current source is a current source.

Nチャネルディプリッション型MO8)ランジスタMl
 1.Ml 2のゲートを第3定電位源ACMにするこ
とにより、反転入力端子とトランジスタM1のドレイン
との間に生じる寄生容量の影響を防ぐことが出来、トラ
ンジスタMll、M12のゲートに与えるためのバイア
ス電源をつくるバイアス回路は不必要となる。従って、
バイアス回路が不必要となった分、消費電力が小さくな
り、ICのチップ面積も小さくなる。
N-channel depletion type MO8) transistor Ml
1. By using the third constant potential source ACM for the gate of Ml2, it is possible to prevent the influence of parasitic capacitance that occurs between the inverting input terminal and the drain of the transistor M1, and the bias applied to the gates of the transistors Mll and M12 can be prevented. A bias circuit to create a power supply becomes unnecessary. Therefore,
Since the bias circuit is no longer necessary, power consumption is reduced and the IC chip area is also reduced.

ここでは、トランジスタMl 1.Ml 2をディプリ
ッション型のMOS)ランジスタとしたがノンドープト
ランジスタでもよいことは明らかである。
Here, transistor Ml 1. Although Ml 2 is a depletion type MOS transistor, it is clear that a non-doped transistor may also be used.

次に本発明の他の実施例を第2図に示す。Next, another embodiment of the present invention is shown in FIG.

第2図における記号は全て第1図における記号と同一で
ある。この実施例はカスケードが、初段反転入力トラン
ジスタM1のドレイン側のみとなっている場合であるが
、この時もカスケードのトランジスタMllのゲートを
非反転入力端子の電位である第3定電位源ACMとすれ
ば、反転入力端子とトランジスタM1のドレインとの間
に生じる寄生容量の影響を防ぐことが出来、トランジス
タMllのゲートに与えるためのバイアス電源をつくる
バイアス回路は不必要となるので、パワーが小さくなり
、ICのチップ面積も小さくなる。
All symbols in FIG. 2 are the same as those in FIG. In this embodiment, the cascade is connected only to the drain side of the first stage inverting input transistor M1, but in this case also, the gate of the cascade transistor Mll is connected to the third constant potential source ACM which is the potential of the non-inverting input terminal. By doing so, it is possible to prevent the influence of parasitic capacitance that occurs between the inverting input terminal and the drain of transistor M1, and a bias circuit that creates a bias power supply to be applied to the gate of transistor Mll is unnecessary, so the power is small. Therefore, the chip area of the IC becomes smaller.

また、トランジスタMllが、ノンドープトランジスタ
でもよいことは明らかである。
Further, it is clear that the transistor Mll may be a non-doped transistor.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は、スイッチトキャパシタ
回路などで用いるカスケード構造をした演算増幅器で、
カスケードのトランジスタのゲートに与えるバイアス電
源を、演算増幅器の非反転入力端子の電位にすることに
より、バイアス回路が不必要となるので、消費電力が小
さくなり、ICチップ面積を小さくすることができると
いう効果がある。
As explained above, the present invention is an operational amplifier with a cascade structure used in a switched capacitor circuit, etc.
By using the potential of the operational amplifier's non-inverting input terminal as the bias power supply applied to the gate of the cascade transistor, a bias circuit becomes unnecessary, reducing power consumption and reducing the IC chip area. effective.

1・・・・・・初段差動増幅回路、2・・・・・・第2
段増幅回路、3,4・・・・・・バイアス回路、VIN
−・・・・・・反転入力端子、VOUT・・・・・・出
力端子、VDD・・・・・・第1定電位源、GND・・
・・・・第2定電位源、ACM・・・・・・第3定電位
源、I、 1.、 It・・・・・・電流源、VB、V
BI、VB2・・・・・・バイアス電源、MO〜M12
.M30〜M42・・・・・・MOS)ランジスタ、C
1・・・・・・容量。
1...First-stage differential amplifier circuit, 2...Second stage
Stage amplifier circuit, 3, 4... bias circuit, VIN
-...Inverting input terminal, VOUT...Output terminal, VDD...First constant potential source, GND...
...Second constant potential source, ACM...Third constant potential source, I, 1. , It... Current source, VB, V
BI, VB2...Bias power supply, MO~M12
.. M30~M42...MOS) transistor, C
1...Capacity.

代理人 弁理士  内 原   晋Agent Patent Attorney Susumu Uchihara

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す回路図、第2図は本発
明の他の実施例を示す回路図、第3図は従来の一例の演
算増幅器を示す回路図である。 I;#段差動4幅回路 2:第2Pi少曽暢回終 3:ハ゛イアス回胸4 VxN−1反転入力端子と 第1 図 GA/ρ:第2刻論源 ACM:第3定電位漂 エコ ’EItyA代 Vδ:バイアス電源 r:MJ段兼動増暢口路 2: @2p9を趨1回路 3:バイアス回路 VxN−:X動力p制シ VOV’r:肛屯囁チ VOD:第1g電位源 GND :¥Jzge位源 Acs: ト沫伽罎 I;電yL源 v8: ノ〈イア′ス懺L7代 MONMII : PtO2トランジスタC1;容量
FIG. 1 is a circuit diagram showing one embodiment of the present invention, FIG. 2 is a circuit diagram showing another embodiment of the invention, and FIG. 3 is a circuit diagram showing an example of a conventional operational amplifier. I; # stage differential 4-width circuit 2: 2nd Pi low voltage circuit 3: High-ass cleavage 4 VxN-1 inverting input terminal and 1st figure GA/ρ: 2nd current source ACM: 3rd constant potential drift echo 'EItyA voltage Vδ: Bias power supply r: MJ stage combined action booster 2: @2p9 1st circuit 3: Bias circuit VxN-: Source GND: ¥Jzge source Acs: ¥Jzge source ACs: ¥イス罎I; yL source v8: No.

Claims (1)

【特許請求の範囲】[Claims] 入力差動トランジスタと、少くともその一方にカスケー
ド接続されたゲート接地トランジスタとを含む演算増幅
器において、前記ゲート接地トランジスタのゲートが、
前記入力差動トランジスタの一方のゲートに接続されて
いることを特徴とする演算増幅器。
In an operational amplifier including an input differential transistor and a common gate transistor cascaded to at least one of the input differential transistors, the gate of the common gate transistor is
An operational amplifier, characterized in that the operational amplifier is connected to one gate of the input differential transistor.
JP1072563A 1989-03-24 1989-03-24 Operational amplifier Expired - Lifetime JPH0744393B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1072563A JPH0744393B2 (en) 1989-03-24 1989-03-24 Operational amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1072563A JPH0744393B2 (en) 1989-03-24 1989-03-24 Operational amplifier

Publications (2)

Publication Number Publication Date
JPH02250510A true JPH02250510A (en) 1990-10-08
JPH0744393B2 JPH0744393B2 (en) 1995-05-15

Family

ID=13492958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1072563A Expired - Lifetime JPH0744393B2 (en) 1989-03-24 1989-03-24 Operational amplifier

Country Status (1)

Country Link
JP (1) JPH0744393B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015524204A (en) * 2012-06-01 2015-08-20 クアルコム,インコーポレイテッド Temperature compensated power detector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023007556A1 (en) * 2021-07-26 2023-02-02 リコー電子デバイス株式会社 Differential amplification circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015524204A (en) * 2012-06-01 2015-08-20 クアルコム,インコーポレイテッド Temperature compensated power detector

Also Published As

Publication number Publication date
JPH0744393B2 (en) 1995-05-15

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