JPH02250055A - Manufacture of photomask and semiconductor device - Google Patents

Manufacture of photomask and semiconductor device

Info

Publication number
JPH02250055A
JPH02250055A JP1269496A JP26949689A JPH02250055A JP H02250055 A JPH02250055 A JP H02250055A JP 1269496 A JP1269496 A JP 1269496A JP 26949689 A JP26949689 A JP 26949689A JP H02250055 A JPH02250055 A JP H02250055A
Authority
JP
Japan
Prior art keywords
pellicle
foreign matter
opening
photomask
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1269496A
Other languages
Japanese (ja)
Inventor
Naoaki Sugimoto
杉本 直明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1269496A priority Critical patent/JPH02250055A/en
Publication of JPH02250055A publication Critical patent/JPH02250055A/en
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To reduce pattern defects due to transfer of foreign matter in a photoprocess and to enhance a yield of a semiconductor device by forming an opening specified in a cross-sectional form through at least one part of the pellicle frame for fixing a pellicle to a photomask. CONSTITUTION:The pellicle 12 is fixed to a pellicle frame 13 so as to cover and protect a pattern part on a reticle 11 at a certain equal space apart from it and holes are bored from the outside and inside of a side face of the frame 13 at an angle of about 45 deg. askew so as to meet each other at right angles to form the opening 14, thus permitting any foreign matter coming into the opening 14 to collide with the hole corner of the opening 14, losing its speed, accordingly, intrusion of foreign matter to be prevented, and yet air permeability to be kept, flatness of the pellicle face to be maintained, detection precisions to be enhanced at the time of checking foreign matter, pattern defects due to transfer of foreign matter in the photoprocess, and the yield of the semiconductor device to be enhanced.

Description

【発明の詳細な説明】 〔産業上の利用分野J 本発明は、半導体装置製造のフォト工程で用いられる、
ペリクルを装置したフォトマスクに関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J]
This invention relates to a photomask equipped with a pellicle.

[従来の技術1 半導体装置製造のフォト工程で、半導体基板上に所望の
レジストパターンを形成する方法として、縮小投影露光
装置(以下、ステッパーとする)を使用することが一般
的であるが、近年素子の微細化が進み、集積度が増すに
つれ、フォトマスクC以下、レティクルとする)上の異
物の転写が問題となってきている。ステッパーは、レテ
ィクル上のパターンを5分の1.または10分の1に縮
小して投影するが、投影レンズや、レジストの解像性能
の向上によって、レティクル上にミクロンオーダーの異
物があれば、十分に転写する可能性がある。そして転写
された異物はパターン欠陥となり、半導体素子の機能を
劣化させ、歩留りを低下させる。
[Prior art 1] In the photo process of semiconductor device manufacturing, it is common to use a reduction projection exposure apparatus (hereinafter referred to as a stepper) as a method of forming a desired resist pattern on a semiconductor substrate. As the miniaturization of elements progresses and the degree of integration increases, transfer of foreign matter onto a photomask (hereinafter referred to as a reticle) has become a problem. The stepper cuts the pattern on the reticle by one-fifth. Alternatively, the image is projected after being reduced to 1/10, but due to improvements in the resolution performance of projection lenses and resists, if there is a micron-order foreign substance on the reticle, there is a possibility that it will be sufficiently transferred. The transferred foreign matter then becomes a pattern defect, deteriorating the function of the semiconductor element and lowering the yield.

そこで、最近、異物の転写を防止する方法としてペリク
ルが使用されている。第2図は従来のペリクルを装着し
たレティクルを示す図であるが、ペリクル22は、ニト
ロセルロースに代表される透明薄膜からなり、アルミ合
金等からなるペリクル枠23を介して、レティクル21
からある一定の距離をおいて、レティクル21上のパタ
ーン部を保護するように覆って固定される。前記ペリク
ル22上には、空気中の異物がペリクルのない時と同様
に付着するが、投影露光時の焦点位置はレティクル21
面上にあるため、ペリクル22上の異物は焦点ズレとな
り、数十ミクロンのレベルの異物は転写しない仕組みと
なっている。しかし、50ミクロン以上の異物は転写す
る可能性があり、依然ペリクル22上の異物検査が必要
であるものの、クリーンルーム内では、この程度の異物
はほとんど存在せず、異物管理は以前より非常に容易と
なった。
Therefore, recently, pellicles have been used as a method to prevent transfer of foreign matter. FIG. 2 is a diagram showing a reticle equipped with a conventional pellicle.
The pattern section on the reticle 21 is covered and fixed at a certain distance from the reticle 21 so as to protect it. Foreign matter in the air adheres to the pellicle 22 in the same way as when there is no pellicle, but the focus position during projection exposure is the same as the reticle 21.
Since it is on a plane, foreign matter on the pellicle 22 is out of focus, and foreign matter at the level of several tens of microns is not transferred. However, foreign matter of 50 microns or more may be transferred, and although foreign matter inspection on the pellicle 22 is still necessary, foreign matter of this size rarely exists in a clean room, and foreign matter management is much easier than before. It became.

ところで、前述のペリクル22面上の異物検査は、ペリ
クル22面にレーザー光を走査し、異物があれば、その
散乱光を検出して前記異物の位置、大きさを判定する方
式に基づく検査装置が一般的に使用されており、高い検
出精度を得るためには、ペリクル22面の平坦性が十分
に確保されている必要がある。
By the way, the above-mentioned foreign object inspection on the pellicle 22 surface is performed using an inspection device based on a method of scanning a laser beam on the pellicle 22 surface and detecting the scattered light if a foreign object is present to determine the position and size of the foreign object. is commonly used, and in order to obtain high detection accuracy, it is necessary to ensure sufficient flatness of the pellicle 22 surface.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、前述の従来技術では、ペリクルの平坦性をそこ
なう原因として、ペリクル、ペリクル枠、及びレティク
ルで囲まれる密室の内圧と外圧の差がある。へりクルが
薄膜であるために内圧よりも外圧が高ければ、ペリクル
は内側へへこみ、逆に内圧よりも外圧が低ければ、ペリ
クルは外側へ膨らむ、実需に低地のマスク工場で、レテ
ィクルにペリクルを装着し、高地の工場へレティクルを
移動させた時には、ペリクルの膨らみが顕著に現われ、
また台風などの低気圧通過時にも変形が起こる。このよ
うにペリクル面の変形によって平坦性がそこなわれ、ペ
リクル面上の異物検査を十分な検出精度をもって行なう
ことができず、異物転写に起因するパターン欠陥が増え
ると共に、歩留りも低下した。
However, in the above-mentioned conventional technology, the cause of deteriorating the flatness of the pellicle is the difference between the internal pressure and external pressure of the closed chamber surrounded by the pellicle, the pellicle frame, and the reticle. Since the pellicle is a thin film, if the external pressure is higher than the internal pressure, the pellicle will dent inward, and conversely, if the external pressure is lower than the internal pressure, the pellicle will expand outward. When I installed it and moved the reticle to a factory in a high altitude, the bulge in the pellicle was noticeable.
Deformation also occurs when low pressure systems such as typhoons pass through. As described above, the flatness of the pellicle surface was impaired by the deformation of the pellicle surface, making it impossible to inspect foreign particles on the pellicle surface with sufficient detection accuracy, increasing pattern defects due to foreign particle transfer, and lowering yield.

そこで、このようなペリクルの膨らみ、あるいはへこみ
をなくすために、第3図のようにペリクル枠33の一部
に通気口となる開口部34をあけることも提案されてい
る。しかし、開口部34を設ける場合、ペリクル枠33
の現在の加工技術から、開口部34の穴は小さくしよう
としても1mm弱となり、これでは異物が侵入する恐れ
がある。従って、開口部34は常に開いておくことはで
きず、粘着テープ等で普段はふたをする必要がある。し
かし、常にペリクル32を平坦に保つためには、常に気
圧を調整するための開口部34がおいていることが望ま
しい、このように、ペリクル枠33に開口部34を設け
る方法は異物を侵入させて・はならないという課題を有
する。
Therefore, in order to eliminate such bulges or dents in the pellicle, it has been proposed to provide an opening 34 serving as a ventilation hole in a part of the pellicle frame 33, as shown in FIG. However, when the opening 34 is provided, the pellicle frame 33
Even if an attempt was made to make the hole of the opening 34 smaller, it would be less than 1 mm with the current processing technology, which may cause foreign matter to enter. Therefore, the opening 34 cannot be kept open all the time, and must usually be covered with adhesive tape or the like. However, in order to keep the pellicle 32 flat at all times, it is desirable to always have an opening 34 for adjusting the air pressure.This method of providing the opening 34 in the pellicle frame 33 prevents foreign matter from entering. The problem is that it must not be done.

そこで、本発明はこのような課題を解決するもので、そ
の目的とするところは、常に開口部をあけたままでも、
異物の侵入をなくしかつ通気性を保つことにより、ペリ
クル面の平坦性を維持し、異物検査時の検出精度を高め
、半導体装置製造のフォト工程での異物転写に起因する
パターン欠陥を減らし、半導体装置の歩留りを向上する
ことにある。
Therefore, the present invention is intended to solve such problems, and its purpose is to keep the opening open at all times.
By eliminating the intrusion of foreign matter and maintaining air permeability, the flatness of the pellicle surface is maintained, the detection accuracy during foreign matter inspection is improved, pattern defects caused by foreign matter transfer during the photo process of semiconductor device manufacturing are reduced, and semiconductor The objective is to improve the yield of the device.

【課題を解決するための手段1 (1)本発明のフォトマスクは、ペリクルを装着したフ
ォトマスクにおいて、前記フォトマスクへ、ペリクルを
装着するためのペリクル枠の少なくとも一部に開口部を
設け、前記開口部の断面形状が長方形でないことを特徴
とする。
[Means for Solving the Problems 1] (1) The photomask of the present invention is a photomask equipped with a pellicle, in which an opening is provided in at least a part of the pellicle frame for mounting the pellicle on the photomask, and The cross-sectional shape of the opening is not rectangular.

(2)本発明のフォトマスクは、第1項記載のフォトマ
スクにおいて、前記開口部の断面形状が、くの字型であ
ることを特徴とする。
(2) The photomask of the present invention is characterized in that the cross-sectional shape of the opening in the photomask described in item 1 is dogleg-shaped.

(3)本発明のフォトマスクは、第1項または第2項記
載のフォトマスクにおいて、前記開口部に、粘着層ある
いは接着層が備えられたことを特徴とする。
(3) The photomask of the present invention is the photomask described in item 1 or 2, characterized in that the opening is provided with an adhesive layer or an adhesive layer.

(4)本発明の半導体装置の製造方法は、半導体装置製
造のフォト工程において、第1項、または、第2項、あ
るいは第3項記載のフォトマスクを用いることを特徴と
する特 〔実 施 例1 第1図は、本発明のペリクルを装着したレティクルを示
す図であるが、従来と同様にペリクル12は、ニトロセ
ルロースに代表される透明薄膜からなり、アルミ合金等
からなるペリクル枠13を介して、レティクル11から
ある一定の距離をおいて、レティクル11上のパターン
部を保護するように覆って固定される。しかし、ペリク
ル枠13の側面には、あらかじめ切削加工により、内側
と外側から斜め約45度の穴をあけ、途中で交差するよ
うな開口部14を一つ設ける。開口部14の直径は、1
mm弱である。さらに、開口部14には、10〜20μ
m厚程度の粘着剤を塗り、粘着層15を形成する。今回
、粘着剤にはアクリルエマルジョン系粘着剤を使用した
。このように加工したアルミ合金等をペリクル枠13と
する。
(4) The method for manufacturing a semiconductor device of the present invention is characterized in that the photomask described in item 1, item 2, or item 3 is used in the photo process for manufacturing the semiconductor device. Example 1 FIG. 1 is a diagram showing a reticle equipped with the pellicle of the present invention. As in the past, the pellicle 12 is made of a transparent thin film typified by nitrocellulose, and the pellicle frame 13 is made of aluminum alloy or the like. It is fixed at a certain distance from the reticle 11 via the reticle 11 so as to protect the pattern section on the reticle 11. However, in the side surface of the pellicle frame 13, a hole is made in advance at an angle of about 45 degrees from the inside and the outside by cutting, and one opening 14 is provided so as to intersect in the middle. The diameter of the opening 14 is 1
It is a little less than mm. Furthermore, the opening 14 has a diameter of 10 to 20 μm.
An adhesive layer 15 is formed by applying an adhesive to a thickness of approximately m. This time, we used an acrylic emulsion adhesive. The thus processed aluminum alloy or the like is used as the pellicle frame 13.

〔発明の効果〕〔Effect of the invention〕

以上述べたように、本発明によれば、 (1)開口部14の断面形状が長方形、すなわち直線形
でないために異物がほとんど侵入しない(2)さらに開
口部14に粘着層15を備えることにより、異物が通過
しにくい ことにより、開口部14に粘着テープ等のふたがなくと
も異物が直接レティクルパターン上に付着することなく
、かつ、開口部14での通気性を十分に保ち、従ってペ
リクル12、ペリクル枠13、及びレティクル11で囲
まれる密室の内圧と外圧が等しくなり、ペリクル面の変
形が防止できるという効果を有する。前記(1)が達成
できる理由としては、開口部14から仮に異物が侵入し
ても、侵入した異物が少なくとも一回は開口部14の側
面に衝突し、侵入するための速度を失うためと考えられ
る。また前記(2)が達成できる理由としては、開口部
14から仮に異物が侵入しても、侵入した異物が粘着層
15に付着し侵入が不可能となるためである。これらの
効果は、実験的にアルミニウム合金の板に同様な開口部
、粘着層を設け、強制的に異物を含んだ気流を流し、通
過した気流の中の異物をダストカウンターで測定した結
果から得られる。
As described above, according to the present invention, (1) the cross-sectional shape of the opening 14 is rectangular, that is, it is not linear, so foreign matter hardly enters; (2) the adhesive layer 15 is further provided in the opening 14; By making it difficult for foreign matter to pass through, even if there is no cover such as adhesive tape on the opening 14, foreign matter will not adhere directly to the reticle pattern, and sufficient air permeability in the opening 14 will be maintained. This has the effect that the internal pressure and external pressure of the closed chamber surrounded by the pellicle frame 13 and reticle 11 are equalized, and deformation of the pellicle surface can be prevented. The reason why (1) can be achieved is that even if a foreign object were to enter through the opening 14, the foreign object would collide with the side surface of the opening 14 at least once and lose the speed needed to enter. It will be done. The reason why (2) can be achieved is that even if foreign matter were to enter through the opening 14, the foreign matter would adhere to the adhesive layer 15 and would be unable to do so. These effects were experimentally demonstrated by creating similar openings and adhesive layers in an aluminum alloy plate, forcing an airflow containing foreign matter through it, and measuring the foreign matter in the airflow with a dust counter. It will be done.

以上のように、本発明における前記開口部14はあけた
ままでも、異物の侵入がなく、かつ通気性を保つことに
より、ペリクル面の平坦性を維持し、異物検査時の検出
精度を高め、半導体装置製造のフォト工程での異物の転
写に起因するパターン欠陥を減らし、半導体装置の歩留
りを向上できる。
As described above, even if the opening 14 of the present invention is left open, no foreign matter can enter, and by maintaining air permeability, the flatness of the pellicle surface is maintained, and the detection accuracy during foreign matter inspection is improved. It is possible to reduce pattern defects caused by transfer of foreign matter during the photo process of semiconductor device manufacturing, and improve the yield of semiconductor devices.

さらに、開口部14への断面形状は、実施例で述べたく
の字型に限らず、たとえばらせん状(第4図(a))、
7字状(第4図(b))のようにな形でも同様な効果が
得られることは十分に予想される。
Further, the cross-sectional shape of the opening 14 is not limited to the dogleg shape described in the embodiment, but may be spiral shaped (see FIG. 4(a)), for example.
It is fully expected that a similar effect will be obtained with a shape like the figure 7 shape (Fig. 4(b)).

また、開口部14はペリクル枠13の側面に限らず、他
の位置に設けたり、複数箇所に設けたり、粘着剤あるい
は粘着剤も実施例に使用したものに限らず、その種類は
様々であることは言うまでもない。
Further, the opening 14 is not limited to the side surface of the pellicle frame 13, but may be provided in other positions or in multiple locations, and the adhesive or adhesive may be of various types, not limited to the one used in the embodiment. Needless to say.

なお、縮小投影露光装置(ステッパー)に用いられるレ
ティクルに限らず、本発明を、l:1投影露光装置用の
マスクに適用してもその効果は同様に期待できる。
Note that the same effects can be expected even if the present invention is applied not only to a reticle used in a reduction projection exposure apparatus (stepper) but also to a mask for an 1:1 projection exposure apparatus.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例であるペリクルを装置したフ
ォトマスクの断面図、第2図は従来のペリクルを装着し
たフォトマスクの投影図、第3図は従来の開口部をペリ
クル枠に持つペリクルを装着したフォトマスクの断面図
、第4図(a)及び第4図(b)は、本発明のペリクル
枠の実施例を示すペリクル枠の断面図である。 目、21.3 12、22、3 13、23、3 14、34、4 15 ・ ・ ・ ・ ・ l・・・・・・フォトマスク 2・・・・・・ペリクル 3・・・・・・ペリクル枠 2.43・・・開口部 ・・・・・・粘着層 以上 出願人 セイコーエプソン株式、会社 代理人 弁理士 鈴 木 喜三部(他1名)第 図 (a) 第3図 (b)
Fig. 1 is a sectional view of a photomask equipped with a pellicle according to an embodiment of the present invention, Fig. 2 is a projected view of a photomask equipped with a conventional pellicle, and Fig. 3 is a sectional view of a photomask equipped with a conventional pellicle. FIGS. 4(a) and 4(b) are cross-sectional views of a photomask equipped with a pellicle. Eyes, 21.3 12, 22, 3 13, 23, 3 14, 34, 4 15 ・ ・ ・ ・ ・ ・ ・ ・ ・ Photomask 2 ・ ・ Pellicle 3 ・・Pellicle frame 2.43...Aperture...Adhesive layer or above Applicant: Seiko Epson Corporation, company agent, patent attorney: Kizobe Suzuki (and 1 other person) Figure (a) Figure 3 (b) )

Claims (4)

【特許請求の範囲】[Claims] (1)ペリクルを装着したフォトマスクにおいて、前記
フォトマスクへ、ペリクルを装着するためのペリクル枠
の少なくとも一部に開口部を設け、前記開口部の断面形
状が長方形でないことを特徴とするフォトマスク。
(1) A photomask equipped with a pellicle, characterized in that an opening is provided in at least a portion of a pellicle frame for attaching the pellicle to the photomask, and the cross-sectional shape of the opening is not rectangular. .
(2)前記開口部の断面形状が、くの字型であることを
特徴とする請求項1記載のフォトマスク。
(2) The photomask according to claim 1, wherein the cross-sectional shape of the opening is dogleg-shaped.
(3)前記開口部に、粘着層あるいは接着層が備えられ
たことを特徴とする請求項1、または請求項2記載のフ
ォトマスク。
(3) The photomask according to claim 1 or 2, wherein the opening is provided with an adhesive layer or an adhesive layer.
(4)半導体装置製造のフォト工程において、請求項1
、または、請求項2、あるいは請求項3記載のフォトマ
スクを用いることを特徴とする半導体装置の製造方法。
(4) Claim 1 in the photo process of semiconductor device manufacturing.
Alternatively, a method for manufacturing a semiconductor device, comprising using the photomask according to claim 2 or 3.
JP1269496A 1988-12-09 1989-10-17 Manufacture of photomask and semiconductor device Pending JPH02250055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1269496A JPH02250055A (en) 1988-12-09 1989-10-17 Manufacture of photomask and semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31128488 1988-12-09
JP63-311284 1988-12-09
JP1269496A JPH02250055A (en) 1988-12-09 1989-10-17 Manufacture of photomask and semiconductor device

Publications (1)

Publication Number Publication Date
JPH02250055A true JPH02250055A (en) 1990-10-05

Family

ID=26548789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1269496A Pending JPH02250055A (en) 1988-12-09 1989-10-17 Manufacture of photomask and semiconductor device

Country Status (1)

Country Link
JP (1) JPH02250055A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05508487A (en) * 1991-05-17 1993-11-25 デュポン・フォトマスクス・インコーポレイテッド pressure relief pellicle
WO1998002783A1 (en) * 1996-07-17 1998-01-22 Mitsui Chemicals, Inc. Mask protecting device
KR20110055454A (en) * 2009-11-19 2011-05-25 신에쓰 가가꾸 고교 가부시끼가이샤 Pellicle for lithography
KR20110116964A (en) 2010-04-20 2011-10-26 신에쓰 가가꾸 고교 가부시끼가이샤 Method for coating adhesive on inner wall of air hole in pellicle frame

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05508487A (en) * 1991-05-17 1993-11-25 デュポン・フォトマスクス・インコーポレイテッド pressure relief pellicle
US6103427A (en) * 1991-05-17 2000-08-15 Dupont Photomasks, Inc. Pressure relieving pellicle
WO1998002783A1 (en) * 1996-07-17 1998-01-22 Mitsui Chemicals, Inc. Mask protecting device
KR20110055454A (en) * 2009-11-19 2011-05-25 신에쓰 가가꾸 고교 가부시끼가이샤 Pellicle for lithography
JP2011107519A (en) * 2009-11-19 2011-06-02 Shin-Etsu Chemical Co Ltd Pellicle for lithography
US8445165B2 (en) 2009-11-19 2013-05-21 Shin-Etsu Chemical Co., Ltd. Pellicle for lithography
KR20110116964A (en) 2010-04-20 2011-10-26 신에쓰 가가꾸 고교 가부시끼가이샤 Method for coating adhesive on inner wall of air hole in pellicle frame
JP2011227287A (en) * 2010-04-20 2011-11-10 Shin Etsu Chem Co Ltd Method for applying adhesive to inner wall of vent hole of pellicle frame

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