JPH0224908B2 - - Google Patents
Info
- Publication number
- JPH0224908B2 JPH0224908B2 JP59277683A JP27768384A JPH0224908B2 JP H0224908 B2 JPH0224908 B2 JP H0224908B2 JP 59277683 A JP59277683 A JP 59277683A JP 27768384 A JP27768384 A JP 27768384A JP H0224908 B2 JPH0224908 B2 JP H0224908B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ion implantation
- platen
- vacuum chamber
- rotating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005468 ion implantation Methods 0.000 claims description 26
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 51
- 230000010354 integration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明はイオン注入装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to an ion implantation device.
（従来の技術及び発明が解決する課題）
半導体工業の発達に伴ない集積回路の集積度が
高くなつている。集積度の向上に伴ない絶縁など
を兼ねたトレンチエツチング溝を形成して対策し
ている。このような溝は集積度が高くなるにつれ
て狭くなるばかりである。このような溝の側壁へ
もイオン注入することが要求され、イオン注入の
際のイオンビーム入射角は適宜選択することが要
求されている。(Prior art and problems to be solved by the invention) With the development of the semiconductor industry, the degree of integration of integrated circuits is increasing. As the degree of integration increases, trench etching grooves that also serve as insulation are formed as a countermeasure. Such grooves only become narrower as the degree of integration increases. Ions are required to be implanted also into the side walls of such grooves, and the ion beam incident angle during ion implantation is required to be appropriately selected.
本発明は上記点に鑑みなされたもので、イオン
ビームの入射角を所望する角度に調整可能にした
イオン注入装置を提供するものである。 The present invention has been made in view of the above points, and provides an ion implantation apparatus in which the incident angle of an ion beam can be adjusted to a desired angle.
（課題を解決するための手段）
この発明は真空容器の外部に設けられた回転手
段と、この回転手段からの回転を伝達する回転軸
が上記真空容器を気密に貫通する如く設けられた
磁気シールベアリングと、上記回転軸に取着され
た複数個の腕と、この各腕にウエハを支持する如
く設けられたウエハプラテンと、この各ウエハプ
ラテンにウエハを保持する如く設けられたウエハ
押えと、このウエハ押えに保持されたウエハへの
イオンビームの注入角度を調整が可能に上記各ウ
エハプラテンに設けられたイオン注入角調整機構
とを具備してなることを特徴とする。
(Means for Solving the Problems) The present invention includes a rotating means provided outside a vacuum container, and a magnetic seal provided such that a rotating shaft for transmitting rotation from the rotating means airtightly penetrates the vacuum container. a bearing, a plurality of arms attached to the rotating shaft, a wafer platen provided on each arm to support a wafer, and a wafer holder provided on each wafer platen to hold a wafer; The present invention is characterized in that it includes an ion implantation angle adjustment mechanism provided on each of the wafer platens, so as to be able to adjust the implantation angle of the ion beam into the wafer held by the wafer holder.
（作 用）
この発明は、回転手段により回転する複数の腕
の各腕にウエハプラテンを設け、このウエハプラ
テンにウエハをウエハ押えにより保持し、イオン
注入するためのウエハ表面の形状に応じて、イオ
ン注入角を調整できるように構成し、高集積化
ICへの対応を可能にしたものである。(Function) In the present invention, a wafer platen is provided on each arm of a plurality of arms rotated by a rotating means, a wafer is held on the wafer platen by a wafer holder, and the wafer is implanted according to the shape of the wafer surface for ion implantation. Highly integrated with adjustable ion implantation angle
This makes it possible to support IC.
（実施例）
以下、添付の図面を参照して本発明の一実施例
を説明する。第１図及び第２図は本発明に係る実
施例を説明するための概略断面図であり、第１図
はイオン注入及び予備真空室と装置外とのウエハ
の授受時の様子を示し、第２図は回転部分の回転
直前或いは直後の様子を示している。(Example) Hereinafter, an example of the present invention will be described with reference to the accompanying drawings. 1 and 2 are schematic cross-sectional views for explaining an embodiment of the present invention. Figure 2 shows the state of the rotating part just before or after rotation.
第１図において、予備真空室（ロードロツク室
又は真空前室）１０は、ウエハを装置内へ搬入し
且つ装置外へウエハを搬出するための真空ゲート
１２を有する。即ち、イオン注入処理を行なうべ
きウエハは、大気中（装置外）からゲート１２を
介して予備真空室１２に搬入され（矢印１４の方
向）、一方、イオン注入後のウエハはゲート１２
を介して大気中に搬出される（矢印１６の方向）。
尚、ウエハカセツト、及びこのウエハカセツトか
らウエハを一枚づつ予備真空室に搬入し、或いは
イオン注入後のウエハを予備真空室からウエハカ
セツトに収納する手段は、本発明に直接関係を有
さないので図示を省略してある。 In FIG. 1, a pre-vacuum chamber (load lock chamber or pre-vacuum chamber) 10 has a vacuum gate 12 for carrying wafers into the apparatus and carrying the wafers out of the apparatus. That is, a wafer to be subjected to ion implantation is carried into the preliminary vacuum chamber 12 from the atmosphere (outside the apparatus) through a gate 12 (in the direction of arrow 14), while a wafer after ion implantation is carried into the preliminary vacuum chamber 12 through a gate 12.
(in the direction of arrow 16).
Note that the wafer cassette and the means for transporting wafers one by one from the wafer cassette into the preliminary vacuum chamber, or for storing wafers after ion implantation from the preliminary vacuum chamber into the wafer cassette, are not directly related to the present invention. Therefore, illustration is omitted.
回転手段１８は、真空処理室（イオン注入室）
２０の内部に設けられた回転部分２２及び駆動部
２４から成り、回転部分２２と駆動部２４は、磁
気シールベアリング２５を介して接続している。
回転部分２２は、回転軸２６に固定された部材２
８と、この部材２８に軸支された腕３０及び３２
と、腕３０を軸支するプラテン３４と、腕３２を
軸支するプラテン３６等から成る。プラテン３４
及び３６には、夫々ウエハの寸法に応じて交換可
能のウエハプラテン（ウエハ保持手段）３５及び
３７が固定され、このウエハプラテン３５及び３
７に保持されたウエハＷは、回転によつてイオン
注入部３８付近と予備真空室付近に搬送される。
尚、破線の矢印４０はイオンの飛来方向を示し、
４２はウエハへのイオン注入角度（チヤンネル角
度）を調整する部材である。 The rotation means 18 is a vacuum processing chamber (ion implantation chamber)
The rotating part 22 and the driving part 24 are connected to each other via a magnetic seal bearing 25.
The rotating portion 22 includes a member 2 fixed to a rotating shaft 26.
8, and arms 30 and 32 pivotally supported by this member 28.
, a platen 34 that pivotally supports the arm 30, a platen 36 that pivotally supports the arm 32, and the like. Platen 34
and 36 are fixed to wafer platens (wafer holding means) 35 and 37, which are replaceable according to the size of the wafer, respectively.
The wafer W held at 7 is transferred to the vicinity of the ion implantation section 38 and the preliminary vacuum chamber by rotation.
Incidentally, a broken line arrow 40 indicates the direction in which the ions fly;
42 is a member that adjusts the angle of ion implantation into the wafer (channel angle).
第１駆動手段５０は油圧或いは空気等により駆
動される駆動部５２と、この駆動部５２によつて
図面の略左右方向に駆動される軸５４と、この軸
５４に軸支されたプラテン５６とを有する。一
方、第２駆動手段６０は、上述の第１駆動手段５
０と同様に、駆動部６２と、この駆動部６２によ
つて図面の略左右方向に駆動される軸６４と、こ
の軸６４に軸支されたプラテン６６を有する。
尚、ウエハへのイオン注入によつて生ずる熱は、
曲折可能のパイプ５８を介してプラテン５６の内
部を循環する適当な冷媒によつて吸収される。 The first driving means 50 includes a driving part 52 driven by hydraulic pressure or air, a shaft 54 driven by the driving part 52 in substantially the left and right directions in the drawing, and a platen 56 supported by the shaft 54. has. On the other hand, the second driving means 60 is the first driving means 5 described above.
0, it has a drive section 62, a shaft 64 driven by the drive section 62 substantially in the left-right direction in the drawing, and a platen 66 pivotally supported by the shaft 64.
The heat generated by ion implantation into the wafer is
It is absorbed by a suitable coolant circulating inside the platen 56 via a bendable pipe 58.
図示の如く、ウエハＷは、ウエハ押え７２及び
７４により夫々ウエハプラテン３５及び３７に保
持されている。このウエハ押え７２及び７４は、
ウエハＷが予備真空室１０へ搬入された際に、ウ
エハ押え駆動手段７４により、ウエハＷを保持し
或いは保持を解除する。尚、予備真空室及び真空
処理室の真空処理室の真空排気系は図示を省略し
てある。 As shown, the wafer W is held on wafer platens 35 and 37 by wafer pressers 72 and 74, respectively. These wafer pressers 72 and 74 are
When the wafer W is carried into the preliminary vacuum chamber 10, the wafer holding drive means 74 holds or releases the holding of the wafer W. Incidentally, the evacuation systems of the preliminary vacuum chamber and the vacuum processing chamber are omitted from illustration.
以下、第１図及び第２図を参照し、本発明の動
作例を説明する。先ず第１枚目のウエハを、ウエ
ハカセツトから適当な手段（共に図示せず）を用
い、真空ゲート１２を介して予備真空室１０に搬
入し、ウエハ押え７２によつてウエハプラテン３
７（図示の場合）に保持する（第１図の状態）。
次に、この状態で予備真空室を所定値（例えば、
10-2Torrまで予備真空引きすると共に、真空処
理室２０を高真空状態（例えば10-6Torr）とす
る。次に、第１及び第２駆動手段５０及び６０に
より、回転部分を第２図に示した状態とする。腕
３０及び３２は、第１図の状態で図面上右側に付
勢されているので、第１駆動手段５０の軸５４及
び第２駆動手段６０の軸６４を引けば、第２図に
示す状態となる。この状態で、回転部分を略180
度回転させ、再び軸５４及び６４を延ばせば、第
１図に示す状態となる。この状態で、真空処理室
２０を更に真空引きしてイオン注入処理を行うと
共に、ゲート１２を開いて第２枚目のウエハを予
備真空室１０に搬入して予備真空引きを行なう。
予備真空室の真空度が所定値に達し、且つイオン
注入が終了していれば、再び第２図の状態とし、
回転部分を略180度回転させ、再び軸５４及び６
４を延ばして第１図に示す状態とする。次に、真
空処理室２０を更に真空引きして第２枚目のウエ
ハにイオン注入処理を行うと共に、ゲート１２を
開いて第１枚目のウエハを予備真空室１０から搬
出し、第３枚目のウエハを予備真空室１０に搬入
する。以後、この工程を繰り返してウエハカセツ
ト内の全ウエハへのイオン注入を完了する。 Hereinafter, an example of the operation of the present invention will be described with reference to FIGS. 1 and 2. First, the first wafer is transferred from a wafer cassette to the preliminary vacuum chamber 10 via the vacuum gate 12 using appropriate means (both not shown), and then placed on the wafer platen 3 by the wafer holder 72.
7 (in the case shown) (the state shown in FIG. 1).
Next, in this state, set the preliminary vacuum chamber to a predetermined value (for example,
A preliminary vacuum is drawn to 10 -2 Torr, and the vacuum processing chamber 20 is brought into a high vacuum state (for example, 10 -6 Torr). Next, the rotating portion is brought into the state shown in FIG. 2 by the first and second driving means 50 and 60. Since the arms 30 and 32 are biased toward the right side in the drawing in the state shown in FIG. 1, by pulling the shaft 54 of the first drive means 50 and the shaft 64 of the second drive means 60, the state shown in FIG. 2 is achieved. becomes. In this state, rotate the rotating part approximately 180 degrees.
By rotating the shaft 54 degrees and extending the shafts 54 and 64 again, the state shown in FIG. 1 is obtained. In this state, the vacuum processing chamber 20 is further evacuated to perform ion implantation processing, and the gate 12 is opened to carry the second wafer into the pre-vacuum chamber 10 for pre-evacuation.
If the degree of vacuum in the preliminary vacuum chamber has reached the predetermined value and the ion implantation has been completed, the state shown in FIG. 2 is restored,
Rotate the rotating part approximately 180 degrees, and then rotate the shafts 54 and 6 again.
4 is extended to the state shown in FIG. Next, the vacuum processing chamber 20 is further evacuated to perform ion implantation processing on the second wafer, the gate 12 is opened, the first wafer is carried out from the preliminary vacuum chamber 10, and the third wafer is The second wafer is carried into the preliminary vacuum chamber 10. Thereafter, this process is repeated to complete ion implantation into all wafers in the wafer cassette.
以上の説明では、予備真空室を１個としたが２
個以上としてもよく、予備真空室を２個以上とし
た場合イオン注入部を複数とすることも可能であ
る。 In the above explanation, the number of preliminary vacuum chambers is one, but there are two.
If the number of preliminary vacuum chambers is two or more, it is also possible to have a plurality of ion implantation parts.
例えば、イオン注入部を一個所とし予備真空室
を２個とした場合、一方の予備真空室をウエハ搬
入専用とし、他方の予備真空室をイオン注入搬出
専用とすれば、イオン注入作業の高速化が図れ
る。この場合、イオン注入部及び２個の予備真空
室は、夫々120度の間隔を置いて設けられ、上述
の回転部分を120度づつ一方向に回転させること
により、ウエハを一方の予備真空室からイオン注
入部へ搬送すると同時に、イオン注入済のウエハ
を他方の予備真空室へ搬送するようにする。 For example, if there is one ion implantation section and two preliminary vacuum chambers, one preliminary vacuum chamber can be used only for wafer loading, and the other preliminary vacuum chamber can be used only for ion implantation and unloading, thereby speeding up the ion implantation process. can be achieved. In this case, the ion implantation section and the two pre-vacuum chambers are each provided with an interval of 120 degrees, and by rotating the above-mentioned rotating part in one direction by 120 degrees, the wafer can be transferred from one of the pre-vacuum chambers. At the same time as being transferred to the ion implantation section, the ion-implanted wafer is transferred to the other preliminary vacuum chamber.
本発明によれば、ウエハへのイオンビームの入
射角を適宜選択できるので、種々の形状へのイオ
ン注入が可能となる。
According to the present invention, since the angle of incidence of the ion beam onto the wafer can be appropriately selected, ions can be implanted into various shapes.
第１図及び第２図は本発明は説明するための概
略断面図である。
１０…予備真空室、１８…回転手段、２０…真
空処理室、３８…イオン注入部、５０…第１駆動
手段、６０…第２駆動手段。
1 and 2 are schematic sectional views for explaining the present invention. DESCRIPTION OF SYMBOLS 10... Preliminary vacuum chamber, 18... Rotation means, 20... Vacuum processing chamber, 38... Ion implantation part, 50... First drive means, 60... Second drive means.
Claims (1)
の回転手段からの回転を伝達する回転軸が上記真
空容器を気密に貫通する如く設けられた磁気シー
ルベアリングと、上記回転軸に取着された複数個
の腕と、この各腕にウエハを支持する如く設けら
れたウエハプラテンと、この各ウエハプラテンに
ウエハを保持する如く設けられたウエハ押えと、
このウエハ押えに保持されたウエハへのイオンビ
ームの注入角度を調整が可能に上記各ウエハプラ
テンに設けられたイオン注入角調整機構とを具備
してなることを特徴とするイオン注入装置。1. A rotating means provided outside the vacuum container, a magnetically sealed bearing provided such that a rotating shaft for transmitting rotation from the rotating means passes through the vacuum container airtightly, and a magnetically sealed bearing attached to the rotating shaft. a plurality of arms, a wafer platen provided on each arm to support a wafer, and a wafer presser provided on each wafer platen to hold a wafer;
An ion implantation apparatus comprising: an ion implantation angle adjustment mechanism provided on each of the wafer platens to enable adjustment of the implantation angle of the ion beam into the wafer held by the wafer holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27768384A JPS61159570A (en) | 1984-12-31 | 1984-12-31 | Wafer conveyor for ion implanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27768384A JPS61159570A (en) | 1984-12-31 | 1984-12-31 | Wafer conveyor for ion implanting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61159570A JPS61159570A (en) | 1986-07-19 |
| JPH0224908B2 true JPH0224908B2 (en) | 1990-05-31 |
Family
ID=17586846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27768384A Granted JPS61159570A (en) | 1984-12-31 | 1984-12-31 | Wafer conveyor for ion implanting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159570A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
| JP3239779B2 (en) * | 1996-10-29 | 2001-12-17 | 日新電機株式会社 | Substrate processing apparatus and substrate processing method |
| JP2012014747A (en) * | 2008-10-31 | 2012-01-19 | Ulvac Japan Ltd | Ion implantation device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51115290A (en) * | 1975-03-10 | 1976-10-09 | Signetics Corp | Vacuum spattering process and the apparatus thereof |
| JPS5763678A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Sputtering device |
-
1984
- 1984-12-31 JP JP27768384A patent/JPS61159570A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51115290A (en) * | 1975-03-10 | 1976-10-09 | Signetics Corp | Vacuum spattering process and the apparatus thereof |
| JPS5763678A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61159570A (en) | 1986-07-19 |
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