JPH02240795A - Recognizing method for magnetic ink printing pattern - Google Patents

Recognizing method for magnetic ink printing pattern

Info

Publication number
JPH02240795A
JPH02240795A JP6081389A JP6081389A JPH02240795A JP H02240795 A JPH02240795 A JP H02240795A JP 6081389 A JP6081389 A JP 6081389A JP 6081389 A JP6081389 A JP 6081389A JP H02240795 A JPH02240795 A JP H02240795A
Authority
JP
Japan
Prior art keywords
pattern
magnetic field
current
magnetic
initial magnetization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6081389A
Other languages
Japanese (ja)
Inventor
Michiko Endou
みち子 遠藤
Shinkichi Shimizu
信吉 清水
Masanori Ueda
政則 上田
Noboru Wakatsuki
昇 若月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6081389A priority Critical patent/JPH02240795A/en
Publication of JPH02240795A publication Critical patent/JPH02240795A/en
Pending legal-status Critical Current

Links

Landscapes

  • Inspection Of Paper Currency And Valuable Securities (AREA)

Abstract

PURPOSE:To improve the accuracy in the case of recognizing a magnetic ink printing pattern by detecting a magnetic field from the magnetic ink printing pattern, while applying a feeble bias magnetic field in the direction opposite to an initial magnetization to an MR element pattern. CONSTITUTION:An MR element chip in which a ferromagnetic magneto- resistance element (MR element) 1 is formed is provided, and with respect to a current pattern 3, a magnetic field is applied in the longitudinal direction of a pattern of an MR element 1. That is, by allowing an initial magnetization instantaneous current Iini to flow to the current pattern 3, the MR element 1 is brought to initial magnetization in the Hini direction in advance, and subsequently, a current of Ib is allowed to flow to the current pattern 3 and a bias magnetic field of Hb is applied to the extent that the initial magnetization is not inverted. In such a way, since the internal magnetization of the MR element pattern comes to rotate easily against the external magnetic field Hex, the sensitivity is improved.

Description

【発明の詳細な説明】 〔概 要〕 磁気インクを使用した磁気インク印刷パターンの認識方
法に関し、 磁気インク印刷パターン認識の感度向上を目的とし、 磁気抵抗素子チップの表面又は裏面に検出磁界方向と直
角方向にバイアス磁界が発生するような電流パターンを
設け、該パターンに瞬時電流を流して初期磁化を行って
から磁気インク印刷パターンを認識する方式にふいて、
上記電流パターンに初期磁化用瞬時電流以外に該瞬時電
流と反対方向に常時微弱な電流を流して磁気抵抗素子に
微弱なバイアス磁界を印加しながら磁気インク印刷パタ
ーンからの磁界を検知するように構成する。
[Detailed Description of the Invention] [Summary] Regarding a method for recognizing a magnetic ink print pattern using magnetic ink, for the purpose of improving the sensitivity of magnetic ink print pattern recognition, the detection magnetic field direction and A current pattern is provided that generates a bias magnetic field in a perpendicular direction, and an instantaneous current is passed through the pattern to perform initial magnetization, and then a magnetic ink printed pattern is recognized.
In addition to the initial magnetizing instantaneous current, the current pattern is configured to constantly flow a weak current in the opposite direction to the instantaneous current to apply a weak bias magnetic field to the magnetoresistive element while detecting the magnetic field from the magnetic ink printed pattern. do.

〔産業上の利用分野〕[Industrial application field]

本発明は、磁気インクを使用した磁気インク印刷パター
ンの認識方法に関する。
The present invention relates to a method for recognizing magnetic ink print patterns using magnetic ink.

磁気インクを使用した印刷パターン(磁気パターン)は
種々のものに使われているが、該磁気パターンを正確に
認識することは、模造品の識別等において重要である。
Printed patterns using magnetic ink (magnetic patterns) are used for various things, and accurate recognition of the magnetic patterns is important in identifying counterfeit products and the like.

そこで、多くの認識情報を該磁気パターンから得ようと
すれば、従来よりも広範囲に渡って磁気パターンを認識
し、且つ微小パターンをも認識可能なものにする必要が
ある。そのため、複数個の磁気検出器をアレイ状に並べ
、該磁気パターンを正確に検知する認識装置が要求され
る。
Therefore, in order to obtain a large amount of recognition information from the magnetic pattern, it is necessary to recognize the magnetic pattern over a wider range than before, and to make it possible to recognize even minute patterns. Therefore, a recognition device is required that has a plurality of magnetic detectors arranged in an array and accurately detects the magnetic patterns.

上記認識装置を実現する方法として、従来[nSbなど
の半導体磁気抵抗素子が用いられていたが、最近ではよ
り小型で量産性のある強磁性薄膜磁気抵抗素子(以下M
R素子という)を用いたセンサが開発されている。MR
素子は、MR素子パターンの長手方向に揃った内部磁化
が、外部磁界によって回転すると、抵抗値が変化するこ
とを利用したものである。
Conventionally, a semiconductor magnetoresistive element such as [nSb] was used as a method to realize the above recognition device, but recently a ferromagnetic thin film magnetoresistive element (hereinafter referred to as M
A sensor using an R element (referred to as an R element) has been developed. M.R.
The element utilizes the fact that when the internal magnetization aligned in the longitudinal direction of the MR element pattern is rotated by an external magnetic field, the resistance value changes.

〔従来の技術〕[Conventional technology]

従来のMR素子を用いた磁気印刷パターンの認識方法は
、磁気印刷パターンを予め磁化した後、該磁気印刷パタ
ーンから発生する微弱磁界を、第8図に示すような強磁
性体薄膜からなるMR素子lを用い、該MR素子の抵抗
Rが磁気印刷パターンからの磁界による磁化Mの向きと
、MR素子1に流す電流■の向きとの相対的な角度θに
依存することを利用して検出するものである。このとき
MR素子1は磁気印刷パターンを認識する前にパターン
の長手方向に瞬時的に磁界を印加して初期磁化を行って
いるが、磁気印刷パターンの認識時にはバイアス磁界は
印加しない。
A conventional method for recognizing a magnetic printed pattern using an MR element is to magnetize the magnetic printed pattern in advance and then apply a weak magnetic field generated from the magnetic printed pattern to an MR element made of a ferromagnetic thin film as shown in FIG. Detection is performed using the fact that the resistance R of the MR element depends on the relative angle θ between the direction of magnetization M due to the magnetic field from the magnetic print pattern and the direction of the current 2 flowing through the MR element 1. It is something. At this time, before recognizing the magnetic print pattern, the MR element 1 momentarily applies a magnetic field in the longitudinal direction of the pattern to perform initial magnetization, but when recognizing the magnetic print pattern, no bias magnetic field is applied.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

磁気インク印刷パターンから発生する磁界は極めて微弱
なため、これを検知するにはMR素子の感度を高くする
必要がある。MR素子の感度SはMR素子パターンの幅
Wと膜厚tに対してさくすることにより高感度なMR素
子の実現が可能である。しかし、Wを太きぐすることは
MR素子部の面積を大きくすることになり、又tは膜と
しての性質を維持するには300Å以上である必要があ
るため、いずれも限界値があって無限に感度を向上する
ことができないという問題がある。
Since the magnetic field generated by the magnetic ink print pattern is extremely weak, it is necessary to increase the sensitivity of the MR element to detect it. A highly sensitive MR element can be realized by reducing the sensitivity S of the MR element with respect to the width W and film thickness t of the MR element pattern. However, increasing the thickness of W increases the area of the MR element, and t needs to be 300 Å or more to maintain the properties of the film, so each has a limit value and is infinite. The problem is that sensitivity cannot be improved.

本発明は上記従来の問題点に鑑み、磁気インク印刷パタ
ーン認識の感度向上を可能とする磁気インク印刷パター
ンの認識方法を提供することを目的とする。
SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, it is an object of the present invention to provide a method for recognizing magnetic ink print patterns that makes it possible to improve the sensitivity of magnetic ink print pattern recognition.

〔課題を解決するための手段〕[Means to solve the problem]

第1図は本発明の原理説明図である。 FIG. 1 is a diagram explaining the principle of the present invention.

同図において、2は強磁性磁気抵抗素子(MR素子)1
が形成されたMR素子チップであり、3はMR素子lの
パターンの長手方向に磁界を印加できる電流パターンで
ある。
In the same figure, 2 is a ferromagnetic magnetoresistive element (MR element) 1
3 is a current pattern that can apply a magnetic field in the longitudinal direction of the pattern of the MR element l.

〔作 用〕[For production]

電流パターン3に初期磁化瞬時電流1i旧を流して予め
1旧方向にMR素子lを初期磁化し、次に電流パターン
3にIbなる電流を流し初期磁化が反転しない程度のH
bなるバイアス磁界を印加することにより、MR素子パ
ターンの内部磁化が外部磁界Hexに対して回転しやす
くなるため、感度が向上する。
An instantaneous initial magnetization current 1i old is passed through the current pattern 3 to initialize the MR element l in the 1old direction, and then a current Ib is passed through the current pattern 3 so that the initial magnetization does not reverse.
By applying the bias magnetic field b, the internal magnetization of the MR element pattern becomes easier to rotate with respect to the external magnetic field Hex, so that the sensitivity is improved.

〔実施例〕〔Example〕

第2図は本発明方法を実施することができる装置を示す
図である。この装置は記録媒体10を搬送する複数個の
ローラllよりなる搬送手段12と、記録媒体10上に
印刷された磁気パターンを着磁する着磁手段13と、着
磁された磁気パターンを検出する磁気センサ14と、該
磁気センサ14からの信号を処理する信号処理回路15
とを具備して構成されている。
FIG. 2 shows an apparatus with which the method of the invention can be carried out. This device includes a conveying means 12 consisting of a plurality of rollers 11 for conveying a recording medium 10, a magnetizing means 13 for magnetizing a magnetic pattern printed on the recording medium 10, and a magnetizing means 13 for detecting the magnetized magnetic pattern. A magnetic sensor 14 and a signal processing circuit 15 that processes signals from the magnetic sensor 14
It is configured with the following.

第3図は第2図のA部拡大断面図であり、磁気パターン
を検出する磁気センサを示している。
FIG. 3 is an enlarged sectional view of section A in FIG. 2, showing a magnetic sensor that detects a magnetic pattern.

同図において、20は磁気抵抗素子(MR素子)であり
、保護板21の上にバイアス磁界印加用のフレキシブル
プリント板22を挾んで搭載されている。23はMR素
子20を駆動するためのフレキシブルプリント板であり
、その一端はMR素子20の電極とワイヤ24によりワ
イヤボンディングされ、他端は図示なき駆動回路を搭載
したブリント板25に接続されている。26はMR素子
を保護するための樹脂又は非磁性金属のカバーである。
In the figure, reference numeral 20 denotes a magnetoresistive element (MR element), which is mounted on a protective plate 21 with a flexible printed board 22 for applying a bias magnetic field sandwiched therebetween. 23 is a flexible printed board for driving the MR element 20, one end of which is wire-bonded to the electrode of the MR element 20 with a wire 24, and the other end connected to a printed board 25 equipped with a drive circuit (not shown). . 26 is a resin or non-magnetic metal cover for protecting the MR element.

第4図は第3図のMR素子20のパターンを拡大して示
した図である。このMR素子は酸化膜を成長させたシリ
コン基板に形成した抵抗体パターン27と外部接続端子
28・29.30を一体に接続した構成である。抵抗体
パターン27はつづら折れ状に形成されたパーマロイ等
の強磁性体薄膜に傾斜した縞状に導電体く例えば金)3
1を形成したものである。
FIG. 4 is an enlarged view of the pattern of the MR element 20 shown in FIG. This MR element has a structure in which a resistor pattern 27 formed on a silicon substrate on which an oxide film is grown and external connection terminals 28, 29, and 30 are integrally connected. The resistor pattern 27 is made of a ferromagnetic thin film such as permalloy formed in a zigzag pattern, and a conductive material (for example, gold) 3 in inclined stripes.
1 was formed.

一般にかかる導電体パターンを具えた抵抗体パターン2
7は、バーバーポール型と呼ばれており、予めパターン
27の長手方向に初期磁化したのち、所定の電流を端子
28と30に印加し、パターン27の長さ方向と直交す
る外部磁界Hexを印加すると、第1ブロツクと第2ブ
ロツクの抵抗変化が端子29より検出され、該抵抗値変
化により外部磁界Hexの有無が検出できる。
Resistor pattern 2 generally equipped with such a conductor pattern
7 is called a barber pole type, and after initial magnetization in the longitudinal direction of the pattern 27, a predetermined current is applied to the terminals 28 and 30, and an external magnetic field Hex perpendicular to the longitudinal direction of the pattern 27 is applied. Then, the resistance change of the first block and the second block is detected from the terminal 29, and the presence or absence of the external magnetic field Hex can be detected from the resistance value change.

第5図に第4図のMR素子の検出磁界方向の磁界強さと
抵抗値変化の関係を示す。図は横軸に外部磁界強さを、
縦軸に抵抗変化をとり、曲線A及びBで外部磁界と抵抗
変化の関係を示した。なおMR素子パターン寸法の幅が
1507− 、パーマロイ膜厚が300人のものもので
ある。
FIG. 5 shows the relationship between the magnetic field strength in the detection magnetic field direction of the MR element shown in FIG. 4 and the change in resistance value. In the figure, the horizontal axis represents the external magnetic field strength,
The vertical axis represents the resistance change, and curves A and B show the relationship between the external magnetic field and the resistance change. Note that the width of the MR element pattern dimension is 1507 mm, and the thickness of the permalloy film is 300 mm.

図よりバイアス磁界Hb=20eを印加した場合(曲線
へで示す)の方がHb=Q(曲線Bで示す)に比べ微小
磁界範囲では同一外部磁界に対する抵抗変化が大きいこ
と、即ち出力が大きいことがわかる。そこで本実施例で
は第6図に示すようなMR素子裏面に設けた電流パター
ン(第3図のフレキシブルプリント板22に形成された
もの)3に一40mAの定電流を流すことによってMR
素子部に初期磁化とは反対方向のHb=−20eのバイ
アス磁界を発生させた状態で磁気インク印刷パターンの
検出を行なうのである。一方、MR素子は磁気インク印
刷パターンの検出を行なう前に予めMR素子パターン内
の磁化を同一方向に揃える初期磁化工程を要するので、
それは上記電流パターン3にスイッチ投入時第7図に示
すように200mAの瞬時電流を流し、約100eの磁
界を発生させて初期磁化を行なうことができる。
The figure shows that when a bias magnetic field Hb=20e is applied (shown by the curve), the resistance change for the same external magnetic field is larger in the micromagnetic field range than when Hb=Q (shown by the curve B), that is, the output is larger. I understand. Therefore, in this embodiment, a constant current of -40 mA is applied to the current pattern 3 provided on the back surface of the MR element (formed on the flexible printed board 22 in FIG. 3) as shown in FIG.
The magnetic ink print pattern is detected while a bias magnetic field of Hb=-20e, which is opposite to the initial magnetization, is generated in the element section. On the other hand, the MR element requires an initial magnetization step to align the magnetization in the MR element pattern in the same direction before detecting the magnetic ink print pattern.
When the switch is turned on, an instantaneous current of 200 mA is passed through the current pattern 3 as shown in FIG. 7, and a magnetic field of approximately 100 e is generated to perform initial magnetization.

以上の本実施例によればMR素子パターンの内部磁化が
回転しやすくなるため微小磁界にふける感度が向上する
According to the present embodiment described above, the internal magnetization of the MR element pattern can be easily rotated, so that the sensitivity to a minute magnetic field is improved.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に、本発明によれば、MR素子パターン
に初期磁化と反対方向の微弱なバイアス磁界を印加しな
がら磁気インク印刷パターンからの磁界を検出するよう
にしたことにより、磁気インク印刷パターンを認識する
場合の精度向上が可能となる。
As explained above, according to the present invention, by detecting the magnetic field from the magnetic ink print pattern while applying a weak bias magnetic field in the opposite direction to the initial magnetization to the MR element pattern, the magnetic ink print pattern It is possible to improve the accuracy when recognizing.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理説明図、 第2図は本発明方法を実施することができる装置を示す
図、 第3図は第2図のA部拡大断面図、 第4図は第3図のMR素子のパターン拡大図、第5図は
MR素子の出力特性を示す図、第6図はバイアス磁界印
加用の電流パターンを有するフレキシブルプリント板を
示す図、第7図は電流パターンに流す電流を示す図、第
8図は従来のMR素子を示す図である。 図において、 1.20は磁気抵抗素子(MR素子)、2はMR素子チ
ップ、 3は電流パターン、 lOは記録媒体、 11はローラ、 12は搬送手段、 14は磁気センサ、 15は信号処理回路 を示す。 本発明の原理説明図 第 図 第2図のA部拡大断面図 第 図 第3図のMR素子のパターン拡大9 第 図 本発明方法を実施することができる装置を示す2第 図 15・・・僅号処31回路 MR素子の出力特性を示す図 第 図 電流パターン(こ流す電流を示す9 第7図 従来のMR素子を示す図 第 図
Fig. 1 is an explanatory diagram of the principle of the present invention, Fig. 2 is a diagram showing an apparatus capable of implementing the method of the present invention, Fig. 3 is an enlarged sectional view of section A in Fig. 2, and Fig. 4 is Fig. 3. Figure 5 is a diagram showing the output characteristics of the MR element, Figure 6 is a diagram showing a flexible printed board with a current pattern for applying a bias magnetic field, and Figure 7 is a diagram showing the current flowing through the current pattern. FIG. 8 is a diagram showing a conventional MR element. In the figure, 1.20 is a magnetoresistive element (MR element), 2 is an MR element chip, 3 is a current pattern, 1O is a recording medium, 11 is a roller, 12 is a conveying means, 14 is a magnetic sensor, 15 is a signal processing circuit shows. Fig. 2 is an enlarged sectional view of section A in Fig. 2; Fig. 9 is an enlarged pattern of the MR element in Fig. 3; Fig. 2 shows an apparatus capable of carrying out the method of the invention; Fig. 15... Figure 7 shows the output characteristics of the 31-circuit MR element; Figure 7 shows the current pattern; Figure 7 shows the current flow;

Claims (1)

【特許請求の範囲】 1、磁気抵抗素子チップ(2)の表面又は裏面に検出磁
界方向と直角方向にバイアス磁界が発生するような電流
パターン(3)を設け、該パターン(3)に瞬時電流を
流して初期磁化を行ってから、磁気インク印刷パターン
を認識する方式において、 上記電流パターン(3)に初期磁化用瞬時電流以外に該
瞬時電流と反対方向に常時微弱な電流を流して磁気抵抗
素子(1)に微弱なバイアス磁界を印加しながら磁気イ
ンク印刷パターンからの磁界を検知するようにしたこと
を特徴とする磁気イイク印刷パターンの認識方法。
[Claims] 1. A current pattern (3) that generates a bias magnetic field in a direction perpendicular to the direction of the detected magnetic field is provided on the front or back surface of the magnetoresistive element chip (2), and an instantaneous current is applied to the pattern (3). In the method of recognizing the printed pattern of magnetic ink after initial magnetization is carried out by passing current, in addition to the instantaneous current for initial magnetization, a weak current is constantly passed in the opposite direction to the instantaneous current in the current pattern (3) to increase magnetic resistance. A method for recognizing a magnetic ink print pattern, characterized in that the magnetic field from the magnetic ink print pattern is detected while applying a weak bias magnetic field to the element (1).
JP6081389A 1989-03-15 1989-03-15 Recognizing method for magnetic ink printing pattern Pending JPH02240795A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6081389A JPH02240795A (en) 1989-03-15 1989-03-15 Recognizing method for magnetic ink printing pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6081389A JPH02240795A (en) 1989-03-15 1989-03-15 Recognizing method for magnetic ink printing pattern

Publications (1)

Publication Number Publication Date
JPH02240795A true JPH02240795A (en) 1990-09-25

Family

ID=13153165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6081389A Pending JPH02240795A (en) 1989-03-15 1989-03-15 Recognizing method for magnetic ink printing pattern

Country Status (1)

Country Link
JP (1) JPH02240795A (en)

Similar Documents

Publication Publication Date Title
JP3186403B2 (en) Magnetic sensor and signal conversion circuit
EP0640841B1 (en) Apparatus and method for federal reserve note authentication
EP0977015B1 (en) Magnetic sensor, signal processing method for magnetic sensors, and detecting apparatus
US3987485A (en) Magnetic head with thin film components
JP5362188B2 (en) Magnetic detection sensor
EP1975637B1 (en) Magnetic substance detection sensor and magnetic substance detecting apparatus
JP5227527B2 (en) Magnetic detection sensor
JPH08178937A (en) Magnetism detecting device
JP4338090B2 (en) Magnetic powder adhesion medium or magnetic film adhesion medium detector
JP4767585B2 (en) Magnetic quantity detection type magnetic sensor device
JPH02240795A (en) Recognizing method for magnetic ink printing pattern
JP3283930B2 (en) Magnetic material detection method
JPH04364498A (en) Detecting method of magnetic property and detecting device of magnetic property using the same
JP5086605B2 (en) Moving body detection device
KR100196654B1 (en) Magnetoresistive sensor having a bias field applied at approximately 56 deg
JPH04282481A (en) Magnetoelectric converter
JPH09231517A (en) Magnetic reluctance sensor
JPH1196430A (en) Magnetic detecting device
JPH087232A (en) Magnetic sensor device
JPH06310776A (en) Magnetic detection element having failure detecting function
JPH0285982A (en) Method and device for recognizing magnetic pattern
JPH0217476A (en) Differential type magnetoresistance effect element
US5629620A (en) Apparatus and method for measurement of magnetic remanence-thickness product of thin magnetic layers
JP3360171B2 (en) Magnetic impedance head module
JP2559474Y2 (en) Current detector